CN101089243B - Molten-salt method for growing zinc oxide xingle crystal using bismuth borate as flux - Google Patents
Molten-salt method for growing zinc oxide xingle crystal using bismuth borate as flux Download PDFInfo
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- CN101089243B CN101089243B CN2006100914588A CN200610091458A CN101089243B CN 101089243 B CN101089243 B CN 101089243B CN 2006100914588 A CN2006100914588 A CN 2006100914588A CN 200610091458 A CN200610091458 A CN 200610091458A CN 101089243 B CN101089243 B CN 101089243B
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Abstract
The present invention relates to the growth of zinc oxide single crystal by using molten-salt growth method using bismuth borate as fluxing agent. In the present invention, the raw materials are: analytical agent bismuth oxide (Bi2O3), boron oxide (B2O3) and specpure zinc oxide (ZnO). During the growth of the crystal, the temperature is reduced at rate of 2-15 DEG C/d. Due to the single crystal of zinc oxide existence interval being of broad, and lower melting point (600 DEG C), so it is prospected that large-sized zinc oxide single crystal with excellent properties can be produced by using bismuth borate (Bi4B2O9) as fluxing agent.
Description
Technical field:
The present invention relates to the crystal material growth preparation field, particularly be used for a kind of new flux of ZnO monocrystalline molten-salt growth.
Background technology:
ZnO crystal is a kind of multi-functional crystal.It is popular a kind of novel semi-conductor laser (LD), luminous (LED) material of current research, be again a kind of substrate material that is suitable for making device substrate such as nitride-based semiconductor, but also be a kind of multi-functional a kind of matrix materials such as Solid State Laser matrix, piezoelectricity, electric light, sound-light that have.
Abroad, scientist has done many research to growth, structure properties, luminescent properties and the electric property of ZnO crystal.The Y.S.Park of Ohio, USA base air depot Aeronautical Research Laboratory in 1966 and D.C.Retnolds have grown high-quality crystal and its structure properties have been carried out preliminary research (2), simultaneously under low temperature (2K), adopting wavelength is that the He-Cd laser apparatus of 325nm is as pumping source, when pump power was 40mW, the ZnO wafer had shown laser output (3).The employings Hydrothermal Growth such as T.Sekiguchi of Japan in 2000 go out the monocrystalline that diameter is 10mm ,+C district (Zn surface) observe ultraviolet emission and green emission by force;-C (O surface) district, observe weak ultraviolet and weak orange light emission, observe strong ultraviolet and weak orange light emission (4) at m district (prismatic plane).The N.Sakagami of Japan in 1999 uses coulometry to measure the stoichiometric ratio of ZnO " molecule " and the deviation (5) of stoichiometric(al) in the real crystal, recently again by measurement I-V and 1/c
2The relation of-V has been studied the variation of each aufwuchsplate electric property of crystalline.Calendar year 2001 Japan Fumiyasu etc. studied the electronic structure of native defect among the ZnO and formed can (6), Japanese national inorganic materials institute is according to DV-X recently
aAnalysis has carried out studying (7) to the lattice relaxation on ZnO monocrystalline (0001) polarization surface, and Muscovite T.V.Butkhuzi etc. grow the ZnO single crystalline layer on ZnS, by thermal treatment under oxygen atmosphere, make the ZnO conduction type that transformation (8) take place.
In a word, in recent years, the research to the ZnO crystal optical property has abroad had very big progress, realized as seen, Ultraluminescence and Ultra-Violet Laser emission, but its laser characteristics all is the prototype experiment that obtains under laser pumping, its major cause is: though the semi-conductive energy gap of ZnO is enough big, photon that can the induced emission UV-light, but the defective in the crystal absorbs photon, and loss is excessive, makes that this emission light is very faint, so utilize the trial of this material manufacturing laser apparatus also very unsuccessful at present, this has just limited its further application, and obviously, one of way of solution is to study the technology of the zero defect ZnO crystal of can growing.
Recently, state research group such as Japan-US is launching keen competition for producing first zno-based laser diode, U.S.'s ballistic missile defense plan tissue (BMDO) has been invested 1,000,000 dollars, allow Cermet company develop the ZnO semiconductor technology, it mainly is the semi-conductive p-n junction technology of development ZnO, the enforcement of this engineering mainly is that plan passes through to use ZnO bulk crystal growth technology, perhaps may adopt film growth techniques to realize.
And at home,, still do not have second family to the growth and the performance study (employing Hydrothermal Growth) except that Shanghai silicate institute of ZnO monocrystalline, also almost be blank about paper, the achievement in research of ZnO monocrystalline.At present, because the ZnO monocrystalline has good performance and numerous potential application foregrounds, become one of research emphasis of international forward position novel material.And domestic very few to its research, make China widen in this field and external gap, this situation is very troubling.Therefore, the research topic of the Hydrothermal Growth ZnO of Shanghai silicate institute monocrystalline has been listed in country " 15 " research project.
The growth method of ZnO monocrystalline mainly contains flux method, hydrothermal synthesis method and vapor phase process.The shortcoming that adopts hydrothermal synthesis method is dangerous big, and apparatus expensive is periodically long, the cost height, and the crystal price is also just very high; And adopt vapor phase process danger also bigger, and the equipment complexity, the cost height, the crystal price is also higher; Relatively, adopt molten-salt growth, can reduce growth temperature, reduce the volatilization of ZnO, can also make crystal obtain modification by selecting the fusing assistant of suitable component, be desirably in to mix into suitable ion in the crystal simultaneously, for example, for the preparation of ZnO semiconducter device, the p-n junction that helps forming.Certainly, adopting an outstanding feature of molten-salt growth method is that growth velocity is slower, yet but help the ordered arrangement of ion in crystal, reduce the defective of crystal intermediate ion position vacancy, particularly might when growing bulk crystals, form semi-conductive p-n junction again by this doping way.What deserves to be mentioned is: adopting a biggest advantage of molten-salt growth is that growth apparatus is simple, do not have dangerous, crystal that can growing large-size, thus can reduce the price of ZnO monocrystalline widely, help realizing the value of its extensive application.
Summary of the invention:
The objective of the invention is to openly be used for a kind of new flux of ZnO monocrystalline molten-salt growth.
The present invention adopts molten-salt growth ZnO monocrystalline, and its special feature is to adopt Bi
4B
2O
9As fusing assistant.
Adopt molten-salt growth ZnO monocrystalline, raw materials used is analytical pure Bi
2O
3, B
2O
3, and specpure ZnO.Fusing assistant is selected Bi for use
2O
3-B
2O
3-ZnO system.Phasor shown in is with reference to the accompanying drawings prepared burden then.Speed with 2～15 ℃/d in crystal growing process is lowered the temperature.
Bi
4B
2O
9-ZnO system phase diagram as shown in drawings, the single-phase existence of ZnO is interval big, peritectic temperature low (being 600 ℃) therefore adopts Bi
4B
2O
9Fusing assistant is expected to grow high-quality, large scale ZnO monocrystalline.
After crystal growth finishes, under various atmosphere, all temps, crystal is carried out anneal, by analysis technology such as atomic force microscope, scanning electron microscope and spectrum, testing research crystalline defect concentration, specific conductivity, impurity concentration, absorption and fluorescence spectrum and electroluminescent properties, determine that crystal belongs to p-type or n-N-type semiconductorN, inquire into its possibility as film-substrate such as solar cell, GaN, ZnO and royal purple photosemiconductor.
ZnO crystal is a kind of multi-functional crystal.It is popular a kind of novel semi-conductor laser (LD), luminous (LED) material of current research, be again a kind of substrate material that is suitable for making device substrate such as nitride-based semiconductor, but also be a kind of multi-functional a kind of matrix materials such as Solid State Laser matrix, piezoelectricity, electric light, sound-light that have.
As semiconductor material, ZnO belongs to the II-VI semi-conductor, is a kind of direct band gap material, has direct broadband band gap, band gap Eg is 3.37eV, the bonded energy of exciton is big, and its value can produce visible light-UV-light for 60meV, replace blue laser if make ultraviolet laser, become compact disk of new generation (CD) reader, can be so that CD dish groove be littler, the data of optical disk reserves will enlarge several times.At present, made high efficiency laser apparatus, but these materials there is tangible weak point (1) with blue light materials such as GaN, ZnSe.The rising of ZnSe laser apparatus easy Yin Wendu when stimulated emission and produce a large amount of propagation of defective is so its life-span is very short.And the GaN fusing point is at 1600 ℃, but slowly decompose 600 ℃ of beginnings, the vapour pressure of nitrogen is 1-100atm in the time of 1000 ℃, and in the time of 1600 ℃, be increased to 700-40000atm, so preparation GaN crystal is difficulty quite, though can adopt the vapor phase process growth in theory, lacking suitable substrate material is the key issue of growth difficulty.And ZnO crystal has the ability and the thermostability of stronger anti-high energy proton bombardment than GaN.So the research of ZnO growing semiconductor crystal is the focus of present various countries scientist cut-throat competition.
ZnO crystal also has certain advantage as device substrate such as nitride-based semiconductor, solar cells, is 2.9 (10-6/K) as thermal expansivity, only is Al
2O
338%, have only Al for the lattice mismatch coefficient of GaN
2O
3Therefore 15.8% of corresponding mismatching can be used as the substrate of films such as ZnO, solar cell, GaN in large quantities.
In addition, ZnO crystal, thin-film material are at surface acoustic wave device, the low-loss optically waveguide, photoconduction, the fields such as utilization of piezoelectricity and sun power all have a wide range of applications, ZnO (as ZnO:B and ZnO:Ga) can be used as sun power transparency electrode and window material, is subjected to the high energy particle radiation injury less, is particularly suitable for using in the space; Can be used as gas sensor (as ZnO:Sn and ZnO:Al); Also can be used as pressure-active element (as ZnO:Bi and ZnO:Sb); The bright ZnO crystal pipe of full impregnated can improve the quality of liquid-crystal display, makes screen more clear, brighter, can open up the broad space in following infosystem.
As luminous host material, Er
3+: ZnO crystal also is a kind of multiwavelength laser material, can produce 1.54um laser, also has very high using value at optical communication and requirement aspect the stadimeter of eye-safe, also can produce the 545nm visible light and make LED.
Description of drawings:
Accompanying drawing is Bi
4B
2O
9-ZnO system phase diagram.
Embodiment:
Embodiment one:
Adopt molten-salt growth ZnO monocrystalline, raw materials used is analytical pure Bi
2O
3, B
2O
3, and specpure ZnO.Fusing assistant is selected Bi for use
2O
3-B
2O
3-ZnO system.Prepare burden according to following ratio then: Bi
4B
2O
9: ZnO=20mol%:80mol%.
After the raw material weighing, in the platinum crucible with the Φ 55mm * 60mm that packs into behind the even compressing tablet of agate mortar ground and mixed, place in the growth furnace, be warming up to the raw material fusing, spontaneous crystallization grows seed crystal earlier.Be about 980 ℃ with the temperature of saturation of attempting seed crystal method mensuration melt then, about 50 ℃ of constant temperature are 24 hours more than temperature of saturation, then with seed crystal down to melt, reduce to temperature of saturation after half an hour, beginning after growing about 10 days, is lifted from liquid level with crystal with the speed cooling of 2～15 ℃/d, reduce to room temperature with the speed of 50 ℃/h then, the transparent crystals that obtains.
After crystal growth finishes, under nitrogen atmosphere, all temps, crystal is carried out anneal, by analysis technology such as atomic force microscope, scanning electron microscope and spectrum, testing research crystalline defect concentration, specific conductivity, impurity concentration, absorption and fluorescence spectrum and electroluminescent properties, determine that crystal belongs to p-type or n-N-type semiconductorN, inquire into its possibility as film-substrate such as solar cell, GaN, ZnO and royal purple photosemiconductor.
Embodiment two:
Adopt molten-salt growth ZnO monocrystalline, raw materials used is analytical pure Bi
2O
3, B
2O
3, and specpure ZnO.Fusing assistant is selected Bi for use
2O
3-B
2O
3-ZnO system.Prepare burden according to following ratio then: Bi
4B
2O
9: ZnO=40mol%:60mol%.
After the raw material weighing, in the platinum crucible with the Φ 55mm * 60mm that packs into behind the even compressing tablet of agate mortar ground and mixed, place in the growth furnace, be warming up to the raw material fusing, spontaneous crystallization grows seed crystal earlier.Be about 900 ℃ with the temperature of saturation of attempting seed crystal method mensuration melt then, about 50 ℃ of constant temperature are 24 hours more than temperature of saturation, then with seed crystal down to melt, reduce to temperature of saturation after half an hour, beginning is with the speed cooling of 2～15 ℃/d, adopt the stirring means that periodically quickens to revolve crucible, maximum rotation speed is 15～25rpm, and the cycle is 3.5 minutes.After growing about 10 days, crystal is lifted from liquid level, reduce to room temperature with the speed of 50 ℃/h then, the transparent crystals that obtains.
After crystal growth finishes, under oxygen atmosphere, all temps, crystal is carried out anneal, by analysis technology such as atomic force microscope, scanning electron microscope and spectrum, testing research crystalline defect concentration, specific conductivity, impurity concentration, absorption and fluorescence spectrum and electroluminescent properties, determine that crystal belongs to p-type or n-N-type semiconductorN, inquire into its possibility as film-substrate such as solar cell, GaN, ZnO and royal purple photosemiconductor.
Claims (2)
1. adopting bismuth boracic acid is the molten-salt growth method of the Zinc oxide single crystal of fusing assistant, it is characterized in that: adopt Bi
4B
2O
9As the fluxing agent growth Zinc oxide single crystal, in crystal growing process, with the speed cooling of 2～15 ℃/d.
2. growth method as claimed in claim 1 is characterized in that: raw materials used is analytical pure Bi
2O
3, B
2O
3With specpure ZnO, the speed with 2～15 ℃/d in crystal growing process is lowered the temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2006100914588A CN101089243B (en) | 2006-06-13 | 2006-06-13 | Molten-salt method for growing zinc oxide xingle crystal using bismuth borate as flux |
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|---|---|---|---|
| CN2006100914588A CN101089243B (en) | 2006-06-13 | 2006-06-13 | Molten-salt method for growing zinc oxide xingle crystal using bismuth borate as flux |
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|---|---|
| CN101089243A CN101089243A (en) | 2007-12-19 |
| CN101089243B true CN101089243B (en) | 2011-10-26 |
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| CN2006100914588A Expired - Fee Related CN101089243B (en) | 2006-06-13 | 2006-06-13 | Molten-salt method for growing zinc oxide xingle crystal using bismuth borate as flux |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6841000B2 (en) * | 2001-10-01 | 2005-01-11 | Ceramare Corporation | Mineralizer composition and method for growing zinc oxide crystals, films and powders |
-
2006
- 2006-06-13 CN CN2006100914588A patent/CN101089243B/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6841000B2 (en) * | 2001-10-01 | 2005-01-11 | Ceramare Corporation | Mineralizer composition and method for growing zinc oxide crystals, films and powders |
Non-Patent Citations (1)
| Title |
|---|
| ERNEST M.LEVIN.The System Bi203-B203.《JOURNAL of the American Ceramic Society》.1962,第45卷(第8期), * |
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Granted publication date: 20111026 Termination date: 20170613 |