CN101089233B - Manufacturing equipment for polysilicon ingot - Google Patents

Manufacturing equipment for polysilicon ingot Download PDF

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Publication number
CN101089233B
CN101089233B CN2007101091239A CN200710109123A CN101089233B CN 101089233 B CN101089233 B CN 101089233B CN 2007101091239 A CN2007101091239 A CN 2007101091239A CN 200710109123 A CN200710109123 A CN 200710109123A CN 101089233 B CN101089233 B CN 101089233B
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Prior art keywords
crucible
manufacturing equipment
polysilicon ingot
ingot according
silicon
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Expired - Fee Related
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CN2007101091239A
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CN101089233A (en
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赵荣相
金荣操
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

Disclosed therein is an apparatus for producing a polycrystalline silicon ingot for a solar cell, which has uniform crystal grains formed by solidifying silicon melted in a crucible using a cooling plate. The polycrystalline silicon ingot producing apparatus includes: a crucible for melting silicon; conveying shafts for adjusting the height of the crucible; heaters for heating the crucible; and a cooling plate located below the crucible for cooling the crucible.

Description

Manufacturing equipment for polysilicon ingot
Technical field
The present invention relates to a kind of silicon ingot (silicon ingot) manufacturing installation, relate in particular to the device that is used to make the polycrystalline silicon used for solar battery ingot.
Background technology
Recently, along with the demand of solar cell is increased with annual about tens percent speed, the demand of polycrystalline silicon used for solar battery ingot also is significantly to increase every year.Generally speaking, the polycrystalline silicon used for solar battery ingot is made by fusion and directional freeze process fill the silicon raw material in quartz or plumbago crucible after.
Fig. 1 is the sectional view of existing silicon ingot manufacturing installation.
By United States Patent (USP) the 6th, 136, No. 091 known existing silicon ingot manufacturing installations comprise by portion within it and form the main body 140 that the chamber of hot-zone (Hot zone) constitutes, hold the quartz or the plumbago crucible 170 of silicon raw material, be used to support the support unit (not shown) of quartz or plumbago crucible 170,, the radiant heat energy that makes the silicon raw materials melt is arranged in crucible 170 packaging four jiaos of well heaters 110 on every side for being provided, to be discharged into the heat around the crucible 170 and to be arranged in the heat insulating member 190 around crucible 170 and the packaging four jiaos of well heaters 110 and to have the cooling cowl that is used for the control device temperature 160 etc. that water coolant flows into pipeline 150 and cooling water flow out of pipeline 180 in order to cut off.Thus, at quartz or plumbago crucible inner coating crucible protective layer and after filling the silicon raw material, crucible and completed packaging four jiaos of Heater group are installed on the casting device.
So crucible and packaging four jiaos of well heaters are arranged at after the casting device inside, the air in the clearing device and make vacuum environment, then again in the device of vacuum state the supply argon gas make internal pressure recover normal pressure.This process is carried out more than three times repeatedly.Cooling water supply then is heated to the crucible internal temperature more than 1,450 ℃ to packaging four jiaos of heater supplies power supplys for the refrigerating unit wall, then this state is kept more than 2 hours.When being filled into the complete fusion of silicon of crucible inside, the power supply that is fed to packaging four jiaos of well heaters is controlled, make crucible begin to cool off to top from the bottom.
But when just the power supply that is fed to well heater by control cooled off, the cooling situation that begins from the crucible bottom was also unbalanced, therefore is difficult to make crystal to be grown up equably, and causes the ununiformity of silicon ingot physical properties.
Japanese Patent is provided with transfer shaft in order to improve temperature control at crucible brace table centre portions No. 11092284, No. 11116386 can move up and down crucible 170.But this scheme exists the heat that is fed on the crucible 170 that the problem of calorific loss takes place to the outside diffusion by transfer shaft.
Summary of the invention
The present invention proposes in order to solve aforesaid problem, and its purpose is to provide a kind of cooling plate that utilizes that the molten silicon in the crucible is solidified, thereby makes the device of the polycrystalline silicon used for solar battery ingot that forms even grained.
Manufacturing equipment for polysilicon ingot provided by the present invention comprises and is used to make silicon fused crucible, be located at the corner of the brace table that is attached at described crucible bottom and be used to regulate described crucible height transfer shaft, be used to heat the well heater of described crucible and be positioned at described crucible bottom and be used to cool off the cooling plate of described crucible.
Description of drawings
Fig. 1 is the sectional view of existing manufacturing equipment for polysilicon ingot;
Fig. 2 is the sectional view according to manufacturing equipment for polysilicon ingot provided by the present invention;
Fig. 3 to Fig. 7 is the process picture sheet according to silicon ingot manufacturing installation provided by the present invention.
Main nomenclature: 210 is chamber, and 211 is first thermal baffle, and 212 is second thermal baffle, 213 is the 3rd thermal baffle, 221 is primary heater, and 222 is secondary heater, and 230 is crucible, 240 is brace table, 251 is first transfer shaft, and 252 is second transfer shaft, and 260 is cooling plate, 270 is molten silicon, and 280 for transferring anchor clamps (jig).
Embodiment
Below, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.Need to prove before this, employed term or word can not limited interpretation be common implication or the implication in the dictionary in this specification and claims book, and should be based in order to illustrate that in the best way principle that its invention contriver can suitably define the notion of term is interpreted as meeting the implication and the notion of the technology of the present invention thought.
Thereupon, the structure of representing in embodiment that this specification sheets is put down in writing and the accompanying drawing is one of most preferred embodiment of the present invention, can not represent technological thought of the present invention fully, therefore should be understood that to have various equivalents and the variation that to replace for the present invention.
Fig. 2 is the sectional view according to manufacturing equipment for polysilicon ingot provided by the present invention.
In O ring (O-ring) type chamber 210, be provided with the crucible 230 that is used to fuse silicon.Chamber 210 wall inside are provided with pipe, and are mobile therein by the water coolant of cooling water pipeline (not shown) supply.And, owing to be provided with temperature sensor, therefore can measure the chamber temperature.
According to the present invention, the pump that is used to form vacuum environment in the chamber 210 can use topping-up pump (booster Pump) and rotary pump (rotary pump).And, in order to keep appropriate vacuum, use roughing valve (roughing valve) and throttling valve (throttle valve).
Crucible 230 bottoms are provided with carbon material brace table 240, for heating crucible 230 is provided with first and second well heater (221,222) around crucible 230.Well heater produces heat according to the power supply of being supplied thus with continuous from the outside power supply device (not shown) that is connected of chamber.This heat is illustrated in control part by near a plurality of temperature sensors that are located at the well heater.Brace table 240 bottoms are provided with first transfer shaft 251 that is used to move up and down crucible 230.First transfer shaft 251 is located at four corners of brace table 240.Usually, when transfer shaft was located at the brace table centre portions, the heat that is fed to crucible 230 was diffused into the outside by transfer shaft calorific loss takes place, but when transfer shaft 251 is located at the brace table corner portions located, this calorific loss can be minimized.The secondary heater 222 that is located at crucible 230 bottoms is made of two well heaters that can open and close, these two well heaters are closed when heating crucible 230, but heating finish after before according to the action of first transfer shaft 251 crucible 230 being moved down for cooling the handover anchor clamps 280 by tangential movement move to adjacent chamber wall and be opened.
Secondary heater 222 bottoms are provided with second thermal baffle 212 that is made of two thermal baffles, this second thermal baffle 212 and secondary heater 222 the same can switchings by the handover anchor clamps 280 of tangential movement.Before crucible 230 moved down by first transfer shaft 251, second thermal baffle 212 was opened with secondary heater 222 the same moving horizontally.
Second thermal baffle, 212 bottoms are provided with cooling plate 260, are used for heated crucible 230 is cooled off.Use cooling plate 260 can be accelerated speed of cooling and cooling efficiency is maximized.Finally can make molten silicon solidifying process optimization by suitably regulating speed of cooling.
Chamber provided by the present invention can pass through the automatic CONTROL PROCESS chamber interior of switchboard vacuum tightness, heater temperature, chamber temperature, heat-up time and each integrant.
Fig. 3 to Fig. 7 represents molten silicon is carried out refrigerative technology.
At first, the high purity silicon raw material of packing in the crucible 230 in chamber 210, and carry out airtight to chamber 210.
According to embodiments of the invention, except the silicon raw material, can add n type or p type impurity and control the electrology characteristic of polysilicon.
Utilize pump and valve in airtight chamber 210 inner sustain 10 -2To 10 -4The vacuum tightness of torr scope.Then start first and second well heater (221,222) heating crucible 230.When crucible 230 was heated, the silicon of packing into began fusion gradually.When finishing fusion, need cool off crucible 230 again molten silicon 270 is solidified.
As shown in Figure 3, solidify molten silicon 270, at first reduce primary heater 221 temperature and cut off secondary heater 222 power supplys in order to utilize cooling plate 260.Secondly, start second transfer shaft 252 the 3rd thermal baffle 213 is moved down, thereby expose the secondary heater 222 and second thermal baffle 212.Along with crucible 230 heat release to the part of exposing, molten silicon 270 beginning partial coagulations.
At this moment, as shown in Figure 4, starting handover anchor clamps 280 move horizontally the secondary heater 222 and second thermal baffle 212 and are opened in the formed space between first thermal baffle 211 and the 3rd thermal baffle 213.
Can form a plurality of layers according to thermal baffle 211,212,213 provided by the present invention, regulate the crucible speed of cooling thus.
Then, as shown in Figure 5, on the brace table 240 that is attached at crucible 230 bottoms, after the contact cooling plate 260, move first transfer shaft 251.
Cooling plate 260 provided by the present invention can adopt at the agent of internal flow fluid refrigeration, for example water-cooling pattern of water coolant.When utilizing cooling plate 260 to promote the cooling of crucible 230 bottoms, molten silicon 270 begins to solidify from the crucible bottom of contact cooling plate, and is solidified to upper direction by the bottom.At this moment, controlling factors speed of cooling such as mobile refrigerant temperatures, heater temperature in the handover speed up and down by regulating transfer shaft (251,252), the cooling plate 260.Crucible 230 descends simultaneously and makes cooling performance maximization carrying out refrigerative by cooling plate 260, and contacts with the 3rd thermal baffle 213.Solidify if molten silicon 270 is finished, then crucible 230 is transplanted on again top and heats first and second well heater (221,222) and in 900 ℃ to 1200 ℃ scopes, append and carry out annealing process by cooling plate 260.
Annealing process provided by the present invention helps to make the various defectives in the polysilicon to minimize, and these defectives are that molten silicon 270 is taking place because of factors such as thermal stresses by solidifying in the process of carrying out crystal growth.
Finish after the annealing process, as shown in Figure 7, in chamber 210, inject sweeping gas (PurgeGas), when chamber 210 internal pressures reach normal pressure, open chamber 210 and take out the test portion that solidifies.
According to the embodiment of the invention, if utilize silicon seed (seed) in order to form polycrystal silicon ingot, then can be manufactured on the crystal growth face orientation with 111 is the polysilicon at center, thus can make with 111 normal angles be that the crystal at center accounts for the polysilicon more than 40% at 30 ° with interior face.
Said process carries out automatically according to the set(ting)value that is input to control part.
More than, with preferred embodiment diagram and the present invention has been described, but the present invention is not limited to the foregoing description, and in the scope that does not break away from the technology of the present invention thought, the personnel with common knowledge of the technical field of the invention can carry out various changes and modifications.
Manufacturing equipment for polysilicon ingot of the present invention utilizes cooling plate to be set in fused silicon in the crucible, thereby can manufacturing defect few and form the polycrystalline silicon used for solar battery ingot of even grained, therefore has remarkable and useful effect.

Claims (8)

1. manufacturing equipment for polysilicon ingot is characterized in that comprising:
Be used to make silicon fused crucible;
Be located at the corner of the brace table that is attached at described crucible bottom and be used to regulate the transfer shaft of described crucible height;
Be used to heat the well heater of described crucible;
Be positioned at described crucible bottom and be used to cool off the cooling plate of described crucible.
2. manufacturing equipment for polysilicon ingot according to claim 1 is characterized in that described well heater is located at around the described crucible.
3. manufacturing equipment for polysilicon ingot according to claim 2, the well heater that it is characterized in that being positioned at described crucible bottom forms a plurality of, and can move horizontally.
4. manufacturing equipment for polysilicon ingot according to claim 3 is characterized in that in the agent of described cooling plate inner utilization fluid refrigeration.
5. manufacturing equipment for polysilicon ingot according to claim 4 is characterized in that described silicon ingot manufacturing installation is located at the chamber inside that can utilize pump formation vacuum environment.
6. manufacturing equipment for polysilicon ingot according to claim 5, the pipeline of the water coolant that it is characterized in that being formed for flowing in described chamber wall inside.
7. manufacturing equipment for polysilicon ingot according to claim 6 is characterized in that comprising a plurality of thermal baffles that are used for preventing calorific loss around the described well heater.
8. manufacturing equipment for polysilicon ingot according to claim 7, the described thermal baffle that it is characterized in that being positioned at described crucible bottom forms a plurality of, and can move horizontally.
CN2007101091239A 2006-06-13 2007-06-12 Manufacturing equipment for polysilicon ingot Expired - Fee Related CN101089233B (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR20060053214 2006-06-13
KR10-2006-0053214 2006-06-13
KR1020060053214 2006-06-13
KR1020070027424 2007-03-21
KR10-2007-0027424 2007-03-21
KR1020070027424A KR100861412B1 (en) 2006-06-13 2007-03-21 Manufacturing equipment for poly silicon ingot

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CN101089233B true CN101089233B (en) 2011-12-28

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CN101323972B (en) * 2008-07-14 2010-06-02 大连理工大学 Polysilicon directional freezing equipment
KR20100024675A (en) * 2008-08-26 2010-03-08 주식회사 아바코 Manufacturing equipment for ingot and method of manufacturing the ingot
KR100902859B1 (en) * 2009-02-17 2009-06-16 (주) 썸백엔지니어링 A casting device for silicon manufacture for a solar cell
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KR101620935B1 (en) * 2009-12-14 2016-05-13 주식회사 케이씨씨 Silicon ingot drawing device and method
KR101139845B1 (en) * 2010-04-29 2012-04-30 한국화학연구원 A high-throughput apparatus for manufacturing silicon ingots for the polycrystalline silicon solar cell
CN102071454A (en) * 2011-02-17 2011-05-25 浙江晶盛机电股份有限公司 Gas cooling device and method used for polycrystalline ingot furnace
CN102732959A (en) * 2011-04-11 2012-10-17 上海普罗新能源有限公司 Polysilicon ingot furnace and polysilicon ingot casting method
KR101270071B1 (en) * 2011-06-30 2013-06-04 (주)세미머티리얼즈 Silicon continuous casting apparatus and method
US20130239621A1 (en) * 2011-09-14 2013-09-19 MEMC Singapore, Pte. Ltd. (UEN200614797D) Directional Solidification Furnace With Laterally Movable Insulation System
US9574825B2 (en) 2011-09-14 2017-02-21 Memc Singapore Pte. Ltd. Directional solidification furnace having movable heat exchangers
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WO2015047828A1 (en) 2013-09-30 2015-04-02 Gt Crystal Systems, Llc A technique for controlling temperature uniformity in crystal growth apparatus
CN105586636A (en) * 2016-02-18 2016-05-18 安徽旭能光伏电力有限公司 Manufacturing technology for directional-solidification growth of polycrystalline silicon ingots used for solar cells
JP7186534B2 (en) 2018-07-25 2022-12-09 昭和電工株式会社 Crystal growth device
CN109112621A (en) * 2018-10-30 2019-01-01 浙江羿阳太阳能科技有限公司 A kind of energy conservation ingot casting device

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KR100861412B1 (en) 2008-10-07
CN101089233A (en) 2007-12-19
KR20070118945A (en) 2007-12-18
ATE510049T1 (en) 2011-06-15

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