CN101083301A - Process for producing nano-scale cross lines array structure organic molecule device - Google Patents
Process for producing nano-scale cross lines array structure organic molecule device Download PDFInfo
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- CN101083301A CN101083301A CN 200610012051 CN200610012051A CN101083301A CN 101083301 A CN101083301 A CN 101083301A CN 200610012051 CN200610012051 CN 200610012051 CN 200610012051 A CN200610012051 A CN 200610012051A CN 101083301 A CN101083301 A CN 101083301A
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- organic molecule
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- electron beam
- film
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- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 claims abstract description 31
- 238000010894 electron beam technology Methods 0.000 claims abstract description 27
- 238000001704 evaporation Methods 0.000 claims abstract description 25
- 238000004528 spin coating Methods 0.000 claims abstract description 13
- 238000001312 dry etching Methods 0.000 claims abstract description 12
- 239000002120 nanofilm Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000000151 deposition Methods 0.000 claims abstract description 6
- 239000003292 glue Substances 0.000 claims abstract description 5
- 238000002360 preparation method Methods 0.000 claims description 29
- 230000008020 evaporation Effects 0.000 claims description 22
- 239000010408 film Substances 0.000 claims description 22
- 239000010410 layer Substances 0.000 claims description 19
- 239000011241 protective layer Substances 0.000 claims description 14
- 238000005516 engineering process Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 13
- 241000193935 Araneus diadematus Species 0.000 claims description 12
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 238000005566 electron beam evaporation Methods 0.000 claims description 5
- 238000000609 electron-beam lithography Methods 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 239000007791 liquid phase Substances 0.000 claims description 3
- 238000010025 steaming Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 239000000843 powder Substances 0.000 claims description 2
- 238000007738 vacuum evaporation Methods 0.000 claims description 2
- 238000002207 thermal evaporation Methods 0.000 claims 2
- 238000009413 insulation Methods 0.000 claims 1
- 239000003960 organic solvent Substances 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 238000004377 microelectronic Methods 0.000 abstract description 3
- 238000001259 photo etching Methods 0.000 abstract description 2
- 238000005459 micromachining Methods 0.000 abstract 1
- 239000011368 organic material Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000005442 molecular electronic Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
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- Cold Cathode And The Manufacture (AREA)
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (11)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2006100120511A CN100470872C (en) | 2006-05-31 | 2006-05-31 | Process for producing nano-scale cross lines array structure organic molecule device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2006100120511A CN100470872C (en) | 2006-05-31 | 2006-05-31 | Process for producing nano-scale cross lines array structure organic molecule device |
Publications (2)
Publication Number | Publication Date |
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CN101083301A true CN101083301A (en) | 2007-12-05 |
CN100470872C CN100470872C (en) | 2009-03-18 |
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CNB2006100120511A Active CN100470872C (en) | 2006-05-31 | 2006-05-31 | Process for producing nano-scale cross lines array structure organic molecule device |
Country Status (1)
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CN (1) | CN100470872C (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101459223B (en) * | 2007-12-12 | 2010-06-09 | 中国科学院微电子研究所 | Method for producing crossed array structured organic molecular device |
CN101645391B (en) * | 2008-08-04 | 2011-04-06 | 首尔大学校产学协力团 | Manufacturing cross-structures of nanostructures |
CN101800284B (en) * | 2009-02-11 | 2011-06-15 | 中国科学院微电子研究所 | Method for manufacturing double-layer top electrode organic field effect transistor |
CN103903970A (en) * | 2014-03-10 | 2014-07-02 | 中国科学院物理研究所 | Method for preparing heterogeneous electrode pair with nanometer gap |
CN107275455A (en) * | 2017-07-25 | 2017-10-20 | 南京迈智芯微光电科技有限公司 | A kind of electrode preparation method of the si-based light-emitting device based on stripping technology |
CN112379574A (en) * | 2020-11-23 | 2021-02-19 | 福建中科光芯光电科技有限公司 | Low-cost manufacturing method of terahertz photoconductive antenna with nano electrode |
CN112582276A (en) * | 2019-09-28 | 2021-03-30 | 台湾积体电路制造股份有限公司 | Semiconductor structure and manufacturing method thereof |
CN114988353A (en) * | 2022-06-14 | 2022-09-02 | 中国科学院微电子研究所 | Method for preparing nano pattern |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1369921A (en) * | 2001-03-07 | 2002-09-18 | 中国科学院长春光学精密机械与物理研究所 | Process for improving filming performance of evaporated organic film |
US20020171125A1 (en) * | 2001-05-17 | 2002-11-21 | Zhenan Bao | Organic semiconductor devices with short channels |
US7259389B2 (en) * | 2002-02-08 | 2007-08-21 | Matsushita Electric Industrial Co., Ltd. | Organic electronic device and method for manufacturing the same |
CN1471182A (en) * | 2003-06-17 | 2004-01-28 | 中国科学院长春应用化学研究所 | Organic semiconductor comprising two or more organic molecules and its processing method |
KR100549227B1 (en) * | 2003-09-06 | 2006-02-03 | 한국전자통신연구원 | Method for manufacturing organic molecular device |
-
2006
- 2006-05-31 CN CNB2006100120511A patent/CN100470872C/en active Active
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101459223B (en) * | 2007-12-12 | 2010-06-09 | 中国科学院微电子研究所 | Method for producing crossed array structured organic molecular device |
CN101645391B (en) * | 2008-08-04 | 2011-04-06 | 首尔大学校产学协力团 | Manufacturing cross-structures of nanostructures |
CN101800284B (en) * | 2009-02-11 | 2011-06-15 | 中国科学院微电子研究所 | Method for manufacturing double-layer top electrode organic field effect transistor |
CN103903970A (en) * | 2014-03-10 | 2014-07-02 | 中国科学院物理研究所 | Method for preparing heterogeneous electrode pair with nanometer gap |
CN107275455A (en) * | 2017-07-25 | 2017-10-20 | 南京迈智芯微光电科技有限公司 | A kind of electrode preparation method of the si-based light-emitting device based on stripping technology |
CN112582276A (en) * | 2019-09-28 | 2021-03-30 | 台湾积体电路制造股份有限公司 | Semiconductor structure and manufacturing method thereof |
US11967573B2 (en) | 2019-09-28 | 2024-04-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Redistribution layers and methods of fabricating the same in semiconductor devices |
CN112379574A (en) * | 2020-11-23 | 2021-02-19 | 福建中科光芯光电科技有限公司 | Low-cost manufacturing method of terahertz photoconductive antenna with nano electrode |
CN114988353A (en) * | 2022-06-14 | 2022-09-02 | 中国科学院微电子研究所 | Method for preparing nano pattern |
Also Published As
Publication number | Publication date |
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CN100470872C (en) | 2009-03-18 |
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Owner name: INST OF MICROELECTRONICS, C. A. S Effective date: 20130407 Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHA Free format text: FORMER OWNER: INST OF MICROELECTRONICS, C. A. S Effective date: 20130407 |
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Free format text: CORRECT: ADDRESS; FROM: 100029 CHAOYANG, BEIJING TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20130407 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee after: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. Patentee after: Institute of Microelectronics of the Chinese Academy of Sciences Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences |