CN101082702A - Minisize two-dimension scan mirror with piezoresistance sensor - Google Patents
Minisize two-dimension scan mirror with piezoresistance sensor Download PDFInfo
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- CN101082702A CN101082702A CN 200710118471 CN200710118471A CN101082702A CN 101082702 A CN101082702 A CN 101082702A CN 200710118471 CN200710118471 CN 200710118471 CN 200710118471 A CN200710118471 A CN 200710118471A CN 101082702 A CN101082702 A CN 101082702A
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- 238000005452 bending Methods 0.000 claims abstract description 9
- 229910052796 boron Inorganic materials 0.000 claims abstract description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000013078 crystal Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 8
- 238000005259 measurement Methods 0.000 claims description 7
- -1 boron ion Chemical class 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 230000001939 inductive effect Effects 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 238000010008 shearing Methods 0.000 claims description 2
- 239000002210 silicon-based material Substances 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 description 9
- 238000010276 construction Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 108091092878 Microsatellite Proteins 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
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Abstract
The invention discloses a mini two-dimensional scanning telescope with piezoresistive transducer in the micro-scanning technical and MOEMS technical domain, which comprises the following parts: reflective lens integrated on the monocrystalline silicon, inertia generator, excited block, flexible beam and piezoelectric driver to bind the excited block, wherein the upper and lower ends of the flexible beam connect the reflecting lens and excited block; the sine DC pulse voltages with two different frequencies is superimposed on the piezoelectric driver to make the reflecting lens do deviation movement corresponding to bending shaft along axle x and twisting axle of axle y of the flexible beam; the bending deviation angle and twisting deviation angle are calculated by voltage VB and VT tested by two Histone bridges near top of the excited block and middle part of the flexible beam; each Histone bridge is composed of boron or phosphor doped piezoresistance.
Description
Technical field
The present invention relates to a kind of micro two-dimensional scanning mirror, belong to micro scanning technology (Micro Scanning) and MOEMS technology (MicroOptical-Electro-MechanicalSystem) field.
Background technology
From main sweep is to be used for the gordian technique that extraterrestrial target is surveyed, and is mainly used in the passive space vehicle in a certain zone, scanning probe space, and its relative distance and relative orientation are measured.Autonomous scanning technique can be divided into modes such as satellite body scanning, gondola spotting scaming and the scanning of catoptron two-dimensional space, wherein satellite body scanning has increased the complicacy of attitude of satellite control, the gondola spotting scaming is relatively large at aspects such as weight, power consumption and volumes, improper micro-satellite (quality is less than 20kg) and the use of type/picosatellite (quality is less than l0kg) received.And the traditional scanning mirror mode of catoptron two-dimensional space scanning has rotating mirror scanning and vibration mirror scanning, adopts motor-driven more.At present, along with the development of micromechanics and micro-electromechanical technology, micro-reflector scans as a kind of novel scan mode, has that volume is little, light weight, precision height, characteristics such as low in energy consumption, can replace traditional laser scanning mechanism, is applicable to the microminiature satellite more.
The micro scanning mirror is an emerging research field based on the micro two-dimensional scanning mirror (being called for short MOEMS two-dimensional scan mirror) of MOEMS technology at present in the world especially.By DMD (DigitalMicro mirror Device) the digital micro-mirror array of TIX's development, be to use the most successful MOEMS micro-mirror device at present, the image that is applied to of success shows the field.The university of states such as U.S. Florida university, Japanese Hyogo university and Europe and scientific research institution are also in the work of being engaged in aspect the MOEMS two-dimensional scan mirror.Domestic present research in this respect is also fewer, still is in the starting stage.
MOEMS two-dimensional scan mirror has structurally carried out improving to traditional scanning mirror and is microminiaturized, combines advanced micro-/ nano technology and micro-processing technology on technology.The MOEMS two-dimensional scan mirror of research mainly contains several big classes of electrostatic, electromagnetic type, electroheating type and piezo-electric type according to the principle of work branch at present.
Existing several MOEMS two-dimensional scan mirror has the following disadvantages:
1. electrostatic MOEMS two-dimensional scan mirror, though type of drive is simple, power consumption is less relatively, but its driving voltage is often higher, deflection angle is less, technological process is comparatively complicated, therefore how to improve process reliability, and improving actuation efficiency is the subject matter that present electrostatic MOEMS two-dimensional scan minute surface faces.
2. electromagnetic type MOEMS two-dimensional scan mirror, the output torque of its type of drive is bigger, therefore the twisting motion amplitude of eyeglass is relatively large, actuation efficiency is higher, but device need be operated under the environment of external magnetic field, need external magnetic field and device be integrated by mounting technology, increase the complicacy of system structure design and processing and manufacturing greatly.
3. electroheating type MOEMS two-dimensional scan mirror, driving realizes by the polysilicon heater that is integrated in the metal oxide, deflection angle under current drives is bigger, but because the hesitation of thermal actuator, the response speed of micro scanning mirror is often slow, is not suitable for being applied to autonomous scanning technique field.
4. piezo-electric type MOEMS two-dimensional scan mirror owing to the high-resolution actuation characteristic of piezoelectric, relatively be applicable to the precision control to moving displacement, but the motion amplitude under big driving voltage is very little, so directly the actuation efficiency of Qu Donging is lower.
5. existing several MOEMS two-dimensional scan mirror, can be used for target is carried out the less of scanning probe technical field, mainly be because all kinds of scanning mirrors do not relate to the problems of measurement to the eyeglass deflection angle substantially, can not when scanning probe, obtain in real time deflection angle.
Summary of the invention
It is low to the objective of the invention is to solve existing MOEMS two-dimensional scan mirror actuation efficiency, complex structure, and difficulty of processing is big, can't measure the problem of eyeglass deflection angle.
The invention provides a kind of micro two-dimensional scanning mirror with piezoresistance sensor, structure is seen Fig. 1, it is characterized in that: contain reflecting optics 1, inertia generator 2, be excited piece 3, piezoelectric actuator 4 and flexible beam 5, wherein, reflecting optics 1 and inertia generator 2 form an integral body, are " " shape, and horizontal component is a reflecting optics 1, vertical component is an inertia generator 2, and its barycenter departs from the bending axis of x direction of flexible beam 5 and the torsion shaft of y direction; Piezoelectric actuator 4 is piezoelectric ceramic pieces, its input signal is the sine DC pulsating volage that two of mutual superposition have different frequency, make 1 pair of bending axis of reflecting optics do curved deflector motion respectively and torsion shaft is made distortion yaw motion, described sine DC pulsating volage U
Go intoBe expressed as follows:
U
Go into=U
1m(1+sin ω
1T)+U
2m(1+sin ω
2T)
U wherein
1mAnd U
2mBe respectively the amplitude of two sine DC pulsating volages, ω
1And ω
2Be respectively the resonance frequency that reflecting optics 1 is done the curved deflector motion and made the distortion yaw motion; Be excited piece 3, bonding with described piezoelectric actuator 4; Flexible beam 5, up and down two ends respectively with reflecting optics 1 be excited piece 3 and be connected, on flexible beam 5, be provided with: whiston bridge circuit B and whiston bridge circuit T, structure is seen Fig. 4, wherein: whiston bridge circuit B is positioned at flexible beam 5 near being excited the end of piece 3, form by four P type pressure drags 6 ~ 9, pressure drag 6 and pressure drag 8 form the diagonal angle, are arranged in [110] crystal orientation, and pressure drag 7 and pressure drag 9 form the diagonal angle, be arranged in [110] crystal orientation, this whiston bridge circuit B is used for reflecting optics 1 curved deflector angle θ
BMeasurement, be sent to the output voltage V of external signal processor
BWith curved deflector angle θ
BRelation represent with following formula:
Wherein l is the length of flexible beam, and h is the thickness of flexible beam, and unit is mm; E is the Young modulus of silicon, and unit is GPa; V
iBe the input voltage of electric bridge, with bridge output voltage V
BUnit be V; Curved deflector angle θ
BUnit be rad; Whiston bridge circuit T is made up of four N type resistance 10 ~ 13, is positioned at the middle part of flexible beam 5, and pressure drag 10 and pressure drag 13 form the diagonal angle, be arranged in [100] crystal orientation, pressure drag 11 and resistance 12 form the diagonal angle, are arranged in [010] crystal orientation, are used to measure the distortion deflection angle theta of reflecting optics 1
T, this whiston bridge circuit is sent to the output voltage V of external signal processor
TWith the distortion deflection angle theta
TRelational expression as follows:
Wherein b is the width of flexible beam, and unit is mm; G is the modulus of shearing of silicon, and unit is GPa; Bridge output voltage V
TUnit be V; The distortion deflection angle theta
TUnit be rad; α and β are the coefficient of torsion setting value of square-section flexible beam; Described reflecting optics 1, inertia generator 2, be excited piece 3 and flexible beam 5 and do as a wholely, select the monocrystalline silicon in 001 crystal orientation for use, adopt inductive couple plasma etching ICP processes to form, piece 3 is bonding with piezoelectric actuator 4 by being excited; Described pressure drag 6 to pressure drag 13 adopts doped with boron and phosphorus formation in silicon materials.
P type pressure drag of the present invention adopts the boron ion to inject and trap pushes away diffusion way formation, and the mode that N type pressure drag adopts phosphonium ion injection and trap to push away diffusion forms, and the lead 14 that connects between each pressure drag adopts gold copper-base alloy.
Characteristics of the present invention are: one-piece construction is simple, can realize the two-dimensional deflection scanning of reflecting optics under a drive source, and integrated measurement of angle device can be measured in real time to the deflection angle on the reflecting optics both direction.Compare with existing MOEMS two-dimensional scan mirror, the present invention has following characteristics: 1) inertia generator and reflecting optics form an integral body, and its barycenter departs from the bending axis and the torsion shaft of flexible beam, make reflecting optics have crooked simultaneously and reverse two degree of freedom; 2) reflecting optics be excited only to adopt a flexible beam to link to each other between the piece, make one-piece construction simple, processing and manufacturing is easy; 3) drive source only adopts a piezoelectric actuator, improves to apply the synthetic driving voltage of two kinds of resonance frequencies, makes system can realize the two-dimensional scan campaign of reflecting optics under a drive source; 4) the integrated piezoresistance sensor of resistance bridge distribution form on the flexible beam makes the real-time measurement of angle of micro two-dimensional scanning mirror become possibility, makes the system can closed loop work.
Description of drawings
Fig. 1 is the one-piece construction synoptic diagram of micro two-dimensional scanning mirror.
Fig. 2 is the curved deflector vibrorecord of micro two-dimensional scanning mirror.
Fig. 3 is the distortion deflection vibrorecord of micro two-dimensional scanning mirror.
Fig. 4 is a piezoresistance topological design synoptic diagram.
Fig. 5 is the resistance bridge connection layout of piezoresistance.
Fig. 6 is the block diagram of the micro two-dimensional mirror system of band piezoresistance sensor.
Embodiment
Specify the present invention below in conjunction with accompanying drawing.
1. micro two-dimensional scanning mirror one-piece construction
Shown in Figure 1 is the one-piece construction of micro two-dimensional scanning mirror, by reflecting optics 1, inertia generator 2, be excited piece 3, piezoelectric actuator 4 and flexible beam 5 and form, wherein reflecting optics 1 forms an integral body with inertia generator 2, be excited piece 3 and piezoelectric actuator 4 bondings, two parts connect by flexible beam 5 up and down.
Reflecting optics 1 has crooked and reverses two degree of freedom, and shown in Figure 2 is the curved deflector motion of micro two-dimensional scanning mirror, and shown in Figure 3 is the distortion yaw motion of micro two-dimensional scanning mirror, has different resonance frequencies in the vibration of both direction.When piezoelectric actuator 4 applies the sinusoidal drive voltage of bending direction resonance frequency, reflecting optics 1 will produce resonance around the x axle on bending direction; When piezoelectric actuator 4 applies the sinusoidal drive voltage of direction of twist resonance frequency, reflecting optics 1 will produce resonance around the y axle on torsional direction; When applying the driving voltage that resonance frequency is synthesized on the both direction simultaneously, reflecting optics 1 will produce resonance around x axle and y axle simultaneously on crooked and torsional direction, the scanning of realization wide-angle two-dimensional deflection.
The reflecting optics 1 of micro two-dimensional scanning mirror, inertia generator 2, be excited piece 3 and flexible beam 5 and do as a whole, select the monocrystalline silicon of (001) crystal face for use, adopt ICP (inductive couple plasma etching) processes to form, and adopt the mode of bonding to assemble with piezoelectric actuator 4.
2. the design of piezoresistance describes in detail
Shown in Figure 4 is the topological design of piezoresistance, has adopted four P type pressure drags 6～9 and four N type pressure drags 10～13 respectively.Wherein four P type pressure drags 6～9 are positioned at flexible beam 5 near being excited the end of piece 3, and pressure drag 6 and pressure drag 8 are arranged in [110] crystal orientation, and pressure drag 7 and pressure drag 9 are arranged in [110] crystal orientation, are used for the measurement at reflecting optics 1 curved deflector angle; Four N type pressure drags 10～13 are positioned at the middle part of flexible beam 5, and pressure drag 10 and pressure drag 13 are arranged in [100] crystal orientation, and pressure drag 11 and pressure drag 12 are arranged in [010] crystal orientation, are used for the measurement at reflecting optics 1 torsional deflection angle.The lead 14 that connects between each piezoresistance is selected gold copper-base alloy for use.
The mode that P type pressure drag 6～9 adopts injection of boron ion and trap to push away diffusion forms, and the mode that N type pressure drag 10～13 adopts phosphonium ions injection and trap to push away diffusion forms, and lead 14 employing sputters and the mode of peeling off form.
Piezoresistance sensor is connected and composed according to resistance bridge by piezoresistance, distribution form as shown in Figure 5, this design can be by reading the output voltage V of electric bridge
BAnd V
T, calculate the deflection angle on crooked and the torsional direction respectively, and the energy compensation temperature improves measuring accuracy and sensitivity to the influence of resistance.
The micro two-dimensional scanning mirror of band piezoresistance sensor of the present invention can constitute the micro scanning system of closed-loop control, as shown in Figure 6.Because the integrated resistance bridge of measuring deflection angle in the micro two-dimensional scanning mirror of band piezoresistance sensor of the present invention, the micro scanning system can be measured in real time to the deflection angle of two-dimensional scan mirror, angle information feedback according to institute's detection of a target, form closed-loop control, to regulate the sweep limit of micro two-dimensional scanning mirror.
Claims (2)
1. be with the micro two-dimensional scanning mirror of piezoresistance sensor, it is characterized in that, contain: reflecting optics (1), inertia generator (2), be excited piece (3), piezoelectric actuator (4) and flexible beam (5), wherein, reflecting optics (1) and inertia generator (2) form an integral body, are " " shape, and horizontal component is reflecting optics (1), vertical component is inertia generator (2), and its barycenter departs from the bending axis of x direction of flexible beam (5) and the torsion shaft of y direction; Piezoelectric actuator (4) is a piezoelectric ceramic piece, its input signal is the sine DC pulsating volage that two of mutual superposition have different frequency, make reflecting optics (1) that bending axis is done the curved deflector motion and torsion shaft is made distortion yaw motion, described sine DC pulsating volage U respectively
Go intoBe expressed as follows:
U
Go into=U
1m(1+sin ω
1T)+U
2m(1+sin ω
2T)
U wherein
1mAnd U
2mBe respectively the amplitude of two sine DC pulsating volages, ω
1And ω
2Be respectively the resonance frequency that reflecting optics (1) is done the curved deflector motion and made the distortion yaw motion; Be excited piece (3), bonding with described piezoelectric actuator (4); Flexible beam (5), up and down two ends respectively with reflecting optics (1) be excited piece (3) and be connected, on flexible beam (5), be provided with: whiston bridge circuit (B) and whiston bridge circuit (T), wherein: whiston bridge circuit (B) is positioned at flexible beam (5) near being excited the end of piece (3), by four P type pressure drags (6), (7), (8), (9) form, pressure drag (6) and pressure drag (8) form the diagonal angle, be arranged in [110] crystal orientation, pressure drag (7) and pressure drag (9) form the diagonal angle, be arranged in [110] crystal orientation, this whiston bridge circuit (B) is used for reflecting optics (1) curved deflector angle θ
BMeasurement, be sent to the output voltage V of external signal processor
BWith curved deflector angle θ
BRelation represent with following formula:
Wherein l is the length of flexible beam, and h is the thickness of flexible beam, and unit is mm; E is the Young modulus of silicon, and unit is GPa; V
iBe the input voltage of electric bridge, with bridge output voltage V
BUnit be V; Curved deflector angle θ
BUnit be rad; Whiston bridge circuit (T) is made up of four N type resistance (10), (11), (12), (13), be positioned at the middle part of flexible beam (5), pressure drag (10) and pressure drag (13) form the diagonal angle, be arranged in [100] crystal orientation, pressure drag (11) and resistance (12) form the diagonal angle, be arranged in [010] crystal orientation, be used to measure the distortion deflection angle theta of reflecting optics (1)
T, this whiston bridge circuit is sent to the output voltage V of external signal processor
TWith the distortion deflection angle theta
TRelational expression as follows:
Wherein b is the width of flexible beam, and unit is mm; G is the modulus of shearing of silicon, and unit is GPa; Bridge output voltage V
TUnit be V; The distortion deflection angle theta
TUnit be rad; α and β are the coefficient of torsion setting value of square-section flexible beam; Described reflecting optics (1), inertia generator (2), be excited piece (3) and flexible beam (5) and do as a whole, select the monocrystalline silicon in (001) crystal orientation for use, adopt inductive couple plasma etching ICP processes to form, piece (3) is bonding with piezoelectric actuator (4) by being excited; Described pressure drag (6) to pressure drag (13) adopts doped with boron and phosphorus formation in silicon materials.
2. the micro two-dimensional scanning mirror of band piezoresistance sensor according to claim 1, it is characterized in that, described P type pressure drag adopts the boron ion to inject and trap pushes away diffusion way formation, the mode that N type pressure drag adopts phosphonium ion injection and trap to push away diffusion forms, and the lead (14) that connects between each pressure drag adopts gold copper-base alloy.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007101184712A CN100451728C (en) | 2007-07-06 | 2007-07-06 | Minisize two-dimension scan mirror with piezoresistance sensor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007101184712A CN100451728C (en) | 2007-07-06 | 2007-07-06 | Minisize two-dimension scan mirror with piezoresistance sensor |
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| Publication Number | Publication Date |
|---|---|
| CN101082702A true CN101082702A (en) | 2007-12-05 |
| CN100451728C CN100451728C (en) | 2009-01-14 |
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|---|---|---|---|
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| CN101655602A (en) * | 2008-08-21 | 2010-02-24 | 三星电子株式会社 | Mems mirror, mirror scanner, optical scanning unit and image forming apparatus |
| CN101344591B (en) * | 2008-08-22 | 2010-12-15 | 清华大学 | Miniature laser two-dimension scanning survey system |
| CN102349717A (en) * | 2011-08-25 | 2012-02-15 | 东华大学 | Non-contact type three-dimensional scanner based on micro mirror |
| CN102384787A (en) * | 2011-08-10 | 2012-03-21 | 北京理工大学 | High-precision controllable microscanning device based on piezoelectric ceramics and sliding guide rail |
| CN102608759A (en) * | 2012-03-19 | 2012-07-25 | 中国科学院上海技术物理研究所 | Image space scanning device and control method for low-temperature optical system |
| CN102692705A (en) * | 2011-06-16 | 2012-09-26 | 重庆大学 | MOEMS (Micro Optoelectro Mechanical System)-process-based micro scanning raster based on of integrating angle sensor |
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Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2995836B2 (en) * | 1990-10-01 | 1999-12-27 | オムロン株式会社 | Optical scanning device |
| CN2139705Y (en) * | 1992-12-02 | 1993-08-04 | 中国科学院上海技术物理研究所 | High precision pendulum lens for scanner of optical machine |
| JPH06289310A (en) * | 1993-03-30 | 1994-10-18 | Omron Corp | Vibrator, optical scanning device, optical information reader, and optical detecting equipment |
| JPH07181414A (en) * | 1993-12-22 | 1995-07-21 | Omron Corp | Optical scanner |
| JP3874358B2 (en) * | 2002-08-14 | 2007-01-31 | スイスプローブ アーゲー | Sensor with cantilever and optical resonator |
| JP2006171182A (en) * | 2004-12-14 | 2006-06-29 | Olympus Corp | Optical deflector |
-
2007
- 2007-07-06 CN CNB2007101184712A patent/CN100451728C/en active Active
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| CN102692705A (en) * | 2011-06-16 | 2012-09-26 | 重庆大学 | MOEMS (Micro Optoelectro Mechanical System)-process-based micro scanning raster based on of integrating angle sensor |
| CN102692705B (en) * | 2011-06-16 | 2014-05-14 | 重庆大学 | MOEMS (Micro Optoelectro Mechanical System)-process-based micro scanning raster based on of integrating angle sensor |
| CN102384787A (en) * | 2011-08-10 | 2012-03-21 | 北京理工大学 | High-precision controllable microscanning device based on piezoelectric ceramics and sliding guide rail |
| CN102384787B (en) * | 2011-08-10 | 2012-12-12 | 北京理工大学 | High-precision controllable microscanning device based on piezoelectric ceramics and sliding guide rail |
| CN102349717A (en) * | 2011-08-25 | 2012-02-15 | 东华大学 | Non-contact type three-dimensional scanner based on micro mirror |
| CN102349717B (en) * | 2011-08-25 | 2013-07-24 | 东华大学 | Non-contact type three-dimensional scanner based on micro mirror |
| CN102608759A (en) * | 2012-03-19 | 2012-07-25 | 中国科学院上海技术物理研究所 | Image space scanning device and control method for low-temperature optical system |
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| CN110780279A (en) * | 2019-10-30 | 2020-02-11 | 上海禾赛光电科技有限公司 | Scanning mirror assembly and lidar comprising same |
| CN112748568A (en) * | 2020-12-31 | 2021-05-04 | 歌尔股份有限公司 | MEMS scanning mirror and laser projector |
| CN112817142A (en) * | 2020-12-31 | 2021-05-18 | 歌尔股份有限公司 | MEMS scanning mirror |
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| Publication number | Publication date |
|---|---|
| CN100451728C (en) | 2009-01-14 |
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