CN101079966A - Solid-state imaging device, method for driving solid-state imaging device and camera - Google Patents
Solid-state imaging device, method for driving solid-state imaging device and camera Download PDFInfo
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- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/58—Control of the dynamic range involving two or more exposures
- H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
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- H04N25/57—Control of the dynamic range
- H04N25/58—Control of the dynamic range involving two or more exposures
- H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
- H04N25/583—Control of the dynamic range involving two or more exposures acquired simultaneously with different integration times
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- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
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- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
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Abstract
A solid-state imaging device including an array of a plurality of first pixels and a plurality of second pixels with higher sensitivity than the first pixels, a first control signal line that controls the first pixels, and a second control signal line that controls the second pixels, wherein the first control signal line and the second control signal line are driven independent of each other.
Description
Cross-reference to related applications
The present invention includes on February 9th, 2006 is the theme of JP2006-031932 in the Japanese patent application No. of Japan Patent office application, and its full content is incorporated in this by reference.
Technical field
The present invention relates to a kind of solid-state imaging apparatus, be used to drive the method and the camera of solid-state imaging apparatus.
Background technology
In the solid-state imaging apparatus in the prior art, pixels all on the imaging plane is all applied the identical time for exposure.Even, also all pixels are all applied the identical time for exposure by in many imaging operations, using the multiexposure, multiple exposure time and realizing (for example referring to JP-A-2004-363666) in the technology of wide dynamic range by merging consequent image.Therefore, in the mixed pixel configuration, the some of them pixel has the sensitivity that differs from one another, make one's options as follows, the short time for exposure promptly is set has the saturated of highly sensitive pixel with prevention, perhaps is set to obtain still to make the high sensitivity pixel saturated from the abundant big signal of the pixel with muting sensitivity the long time for exposure.In this specification, the pixel with high sensitivity (high sensitivity pixel) refers to the pixel with sensitivity higher than the pixel of muting sensitivity (muting sensitivity pixel).
For example, so that do not make and have highly sensitive pixel when saturated, will can from pixel, not obtain enough signal charges, cause the S/N ratio that reduces with muting sensitivity when the time for exposure is set.On the other hand, when being set, the time for exposure so that when from pixel, obtaining enough signal charges, will make that to have highly sensitive pixel saturated loathsomely with muting sensitivity.
Summary of the invention
Be necessary to solve such problem, promptly when making that having highly sensitive pixel is not set up by the saturated time for exposure, can from pixel, not obtain enough signal charges with muting sensitivity, cause the S/N ratio that reduces, when making that the time for exposure that obtains enough signal charges from the pixel with muting sensitivity is set up, has highly sensitive pixel simultaneously by saturated.
Therefore, be necessary to obtain a kind of the S/N that does not have to reduce pixel with muting sensitivity than and do not have a wide dynamic range under the saturated situation with highly sensitive pixel.
According to embodiments of the invention, a kind of solid-state imaging apparatus is provided, it has the array that a plurality of first pixels and a plurality of ratio first pixel have more highly sensitive second pixel.Solid-state imaging apparatus comprises first control signal wire of controlling first pixel and second control signal wire of controlling second pixel, and first control signal wire and second control signal wire are by separate driving.
Solid-state imaging apparatus according to the foregoing description, because second control signal wire of first control signal wire of control first pixel and control second pixel so that first pixel and have more highly sensitive second pixel by separate driving than first pixel, is had therefore that more highly sensitive second pixel is used the dissimilar time for exposure simultaneously and be possible readout time by separate driving to first pixel and ratio first pixel.
According to the abovementioned embodiments of the present invention, because dissimilar time for exposure and readout time can be applied to first pixel and have on more highly sensitive second pixel than first pixel, therefore can contrast second pixel and have more that first pixel of muting sensitivity is provided with the long time for exposure in order to obtain enough big signal, thereby stoped the minimizing of S/N ratio, to having be set in order to stop saturated the short time for exposure simultaneously than more highly sensitive second pixel of first pixel.Like this, can obtain wide dynamic range.
Description of drawings
Fig. 1 shows the layout of the embodiment of the invention (first example);
Fig. 2 shows the system layout of the example of the MOS imaging sensor that pixel with first embodiment arranges;
Fig. 3 shows the system layout of another embodiment of the present invention (second example);
Fig. 4 A and 4B show the layout of another embodiment of the present invention (the 3rd example);
Fig. 5 shows the system layout of the example of the MOS imaging sensor that pixel with the 3rd embodiment arranges;
Fig. 6 shows the layout of another embodiment of the present invention (the 4th example);
Fig. 7 shows the illustrative arrangement sectional view of another embodiment of the present invention (the 5th example);
Fig. 8 shows the illustrative arrangement sectional view of another embodiment of the present invention (the 6th example);
Fig. 9 shows the layout of another embodiment of the present invention (the 7th example);
Figure 10 shows another embodiment of the present invention (the 8th example) and gathers the quantity (signal level) of electric charge and the relation of time for exposure;
Figure 11 shows the sequential chart of another embodiment of the present invention (the 9th example);
Figure 12 A illustrates the configuration of the demonstration of the image element circuit that shows another embodiment of the present invention (the tenth example);
Figure 12 B shows the sequential chart of another embodiment of the present invention (the tenth example);
Figure 13 shows the sequential chart of another embodiment of the present invention (the 11 example);
Figure 14 shows the sequential chart of another embodiment of the present invention (the 13 example);
The quantity (signal level) of electric charge and the relation between the incident intensity are gathered in Figure 15 explanation in another embodiment of the present invention (the 13 example);
Figure 16 shows the sequential chart of another embodiment of the present invention (the 14 example);
Figure 17 shows the sequential chart of another embodiment of the present invention (the 15 example);
The quantity (signal level) of electric charge and the relation between the incident intensity are gathered in Figure 18 explanation in another embodiment of the present invention (the 15 example);
Figure 19 shows the sequential chart of another embodiment of the present invention (the 16 example);
Figure 20 explanation is gathered the quantity (signal level) of electric charge and the relation between the incident intensity and the sequential chart of combined diagram picture between exposure period in another embodiment of the present invention (the 16 example);
Figure 21 shows the sequential chart of another embodiment of the present invention (the 17 example);
Figure 22 shows the sequential chart of another embodiment of the present invention (the 17 example);
Figure 23 shows the sequential chart of another embodiment of the present invention (the 17 example);
Figure 24 shows the sequential chart of another embodiment of the present invention (the 17 example);
Figure 25 shows the sequential chart of another embodiment of the present invention (the 18 example); With
Figure 26 shows the sectional view of camera according to an embodiment of the invention.
Embodiment
In the following description, " deviation " in the time for exposure refers in arbitrary row the inconsistent of time for exposure between the muting sensitivity pixel and high sensitivity pixel, and the time for exposure " does not overlap (misalignment) " and refers to depend on the variation of reading capable " deviation ".
At first, will one embodiment of the present of invention (first example) be described with reference to the layout shown in the figure 1.
As shown in Figure 1, solid-state imaging apparatus 1 has the pixel of arranging at the two-dimensional matrix of vertical direction (x direction) and horizontal direction (y direction).Have first and second horizontal lines of alternately arranging in vertical direction.First pixel column is formed by a plurality of first pixels 31 of arranging at line direction, and second pixel column is formed by a plurality of second pixels 41 that are arranged in line direction, and each all has the sensitivity higher than first pixel 31.
Because driven independently of each other as first pixel 31 of muting sensitivity pixel with as second pixel 41 of high sensitivity pixel, the sequential of electronic shutter (shuttering) can be provided with to adjust the time for exposure by independent.Like this, correct exposure can be applied on first pixel 31 and second pixel 41, just, drives muting sensitivity first pixel 31 and obtains enough signal charges, and it is possible stoping high sensitivity second pixel 41 saturated simultaneously.
A kind of example with MOS imaging sensor of pixel arrangement will be described below with reference to the system layout shown in the figure 2, and first control signal wire 32 and second control signal wire 42 can independently be controlled in this pixel is arranged.
As shown in Figure 2, a kind of MOS imaging sensor 51 comprises and has unit pixel the pel array 10 of (first pixel 31 and have than first pixel, 31 more highly sensitive second pixels 41), and each all comprises photo-electric conversion element, and in matrix two-dimensional arrangements.MOS imaging sensor 51 also comprises, as first drive circuit 11 of independent control first control signal wire of the peripheral circuit of pel array 10, second drive circuit 12, the first pixel vertical scanning circuit 13, the second pixel vertical scanning circuit 14, sequential generative circuit 15 and the horizontal scanning circuit 16 of independent control second control signal wire.
Fig. 2 also shows the circuit arrangement of the demonstration of first pixel 31 and second pixel 41.Image element circuit according to the unit pixel of the circuit of this demonstration comprises photo-electric conversion element, and for example photodiode 21, and four transistors, for example, and transmission transistor 22, reset transistor 23, amplifier transistor 24 and select transistor 25.In this specification, use the conduct of N passage MOS transistor, reset transistor 23, the example of amplifier transistor 24 and selection transistor 25 as transmission transistor 22.
The drain electrode of reset transistor 23 and source electrode are connected respectively to the replacement line 115 and the diffusion part 26 of floating.Before signal charge was transferred to the diffusion part 26 of floating from photodiode 21, in order to respond the replacement pulse RST that offers grid, will the float electromotive force of diffusion part 26 of reset transistor 23 was reset to reset voltage Vrst.
The grid of amplifier transistor 24 and drain electrode are connected respectively on float diffusion part 26 and the pixel power supply Vdd.After electromotive force is reset transistor 23 replacements, the electromotive force that amplifier transistor 24 is exported at diffusion part 26 places of floating is as the replacement level, after signal charge was transmitted transistor 22 transmission, the electromotive force that this amplifier transistor is exported at diffusion part 26 places of floating was as signal level.
Select the drain electrode of transistor 25 and source electrode and the output signal line 111 that source electrode is connected respectively to amplifier transistor 24.Select transistor 25, for example, thereby be unlocked pixel (first pixel 31 or second pixel 41) is become selection mode in order to respond the strobe pulse SEL that offers grid, so as output from the signal of amplifier transistor 24 outputs to output signal line 111.It also is possible connecting selection transistor 25 between the drain electrode of pixel power supply Vdd and amplifier transistor 24.Therefore, the circuit arrangement of first pixel 31 and second pixel 41 is identical.
Drive circuit (first drive circuit 11 and second drive circuit 12) read in the pel array 11 read the row in first pixel 31 and the signal of second pixel 41.
In the first pixel vertical scanning circuit 13 and the second pixel vertical scanning circuit 14 each is made of shift register, address decoder etc.The first and second pixel vertical scanning circuit 13 and 14 generate replacement pulse RST, transmission pulse TRG, strobe pulse SEL etc., capable and read first pixel 31 and second pixel 41 in the row to be suitable in vertical direction (on/following direction) scanning element array 11 electronic shutter with the standard of behaviour, in electronic shutter is capable, carry out electronic shutter operation for the signal that discharges first pixel 31 in this row or second pixel 41 simultaneously.Before first drive circuit 11 and second drive circuit 12 were carried out with the time reading scan corresponding to shutter speed, electronic shutter operation was performed (electronic shutter is capable) on delegation.
Another embodiment of the present invention (second example) is described with reference to the system layout shown in Fig. 3.
As shown in Figure 3, MOS imaging sensor 52 comprises have unit pixel 20 pel array 10 of (first pixel 31 and second pixel 41), and each all comprises photo-electric conversion element, and in matrix two-dimensional arrangements.MOS imaging sensor 52 also comprises, as independent first drive circuit 11 of first control signal wire, second drive circuit 12, the first pixel vertical scanning circuit 13, the second pixel vertical scanning circuit 14, sequential generative circuit 15 and first horizontal scanning circuit 17 and second horizontal scanning circuit 18 of independent control second control signal wire controlled of pel array 10 peripheral circuits.
Configuration MOS imaging sensor 52 is so that in the MOS imaging sensor of describing with reference to figure 2 51, and first output signal line 117 is connected on first pixel 31 in each row, and second output signal line 118 is connected on second pixel 41 in each row.First output signal line 117 is connected to first horizontal scanning circuit 17 of the output signal of horizontal sweep first pixel 31, and simultaneously second output signal line 118 is connected on second horizontal scanning circuit 18 of output signal of horizontal sweep second pixel 41.Therefore, being used for first output signal line 117 of first pixel 31 of muting sensitivity and second output signal line 118 that is used for highly sensitive second pixel 41 all is independently controlled.
In second example, the configuration pixel is arranged so that the output of the output of first pixel 31 of muting sensitivity and high sensitivity second pixel 41 can independently obtain mutually, so that the value of the value of first pixel 31 and second pixel 41 can independently be read out mutually.Like this, have only second pixel of high sensitivity pixel to read with high frame frequency at an easy rate, the advantage that prevents that second pixel 41 is saturated is provided.It is possible obtaining higher S/N ratio by the acquisition multiframe.
Following another embodiment of the present invention (the 3rd example) also will be described with reference to the layout shown in figure 4A and Fig. 4 B.
Shown in Fig. 4 A, the two-dimension square shape array of the two-dimension square shape array of first pixel 31 of muting sensitivity and high sensitivity second pixel 41 all is capped so that they can be in the pitch of level and vertical direction displacement half-pixel.
Shown in Fig. 4 B, the two-dimension square shape array of the two-dimension square shape array of first pixel 31 of muting sensitivity and high sensitivity second pixel 41 all is capped so that they can be in the pitch of level and vertical direction displacement half-pixel, and first pixel 31 and second pixel 41 are evenly spaced apart.Especially, use by the inclination square pixel and obtain diamond pixels, second pixel places the position of first pixel in level and vertical direction displacement half-pixel pitch.Therefore, first pixel 31 is arranged with second pixel 41 so that they consistent with line direction and column direction to the angular direction.Though used equilateral rhombus in order to simplify primitive shape in this example, primitive shape can be polygonal, for example hexagon and octagon.In addition, controlling first control signal wire 32 of first pixel 31 and second control signal wire 42 of control second pixel 41 independently is connected mutually.And the output signal line 33 that is used for first pixel 31 independently is connected mutually with the output signal line 43 that is used for second pixel 41.
In the configuration of the solid-state imaging apparatus 2 in the 3rd example, second pixel 41 as the high sensitivity pixel, in arrangement, separated equably in level and vertical direction, so that have good S/N ratio and highly sensitive second pixel, 41 increase brightness resolutions, provide the advantage of improved image resolution ratio.
Example with MOS imaging sensor of the pixel arrangement of describing with reference to figure 4B will be described below with reference to the system layout shown in the figure 5.
As shown in Figure 5, MOS imaging sensor 53 comprises the have pixel pel array 10 of (first pixel 31 and second pixel 41), and each all comprises photo-electric conversion element, and in matrix two-dimensional arrangements.MOS imaging sensor 53 yet comprises as first drive circuit 11 of independent control first control signal wire of the peripheral circuit of pel array 10, second drive circuit 12, the first pixel vertical scanning circuit 13, the second pixel vertical scanning circuit 14, sequential generative circuit 15, the first pixel level scanning circuits 17 and the second pixel level scanning circuit 18 of independent control second control signal wire.
Each first pixel 31 and second pixel 41 (for example form polygonal shape, octagon among the figure), the arranged of the pixel in the pel array 10 has the output signal line 33 that alternately is connected to row and 43 and first control signal wire and second control signal wire that are connected respectively to the row of the row of first pixel 31 and second pixel 41.These control signal wires comprise transmission control line 112, replacement control line 113 and selection control line 114.In addition, provide the replacement line 115 of reset voltage to be connected to each pixel (first pixel 31 and second pixel 41).Though the shape of first pixel 31 and second pixel 41 is octagon as an example, these pixels also can be hexagon or other polygonal shape.
Another embodiment of the present invention (the 4th example) general be described with reference to the layout of figure 6 below.
As shown in Figure 6, the solid-state imaging apparatus 3 of the 4th example has first pixel 31 (muting sensitivity pixel) of arranging with test board (checker board) pattern and has than first pixel, 31 more highly sensitive second pixels 41 (high sensitivity pixel), and first pixel 31 and second pixel 41 are separated equably.Controlling first control signal wire 32 of first pixel 31 and second control signal wire 42 of control second pixel 41 is connected independently of each other.Though first and second control signal wires 32 and 42 are owing to drawn with zigzag line by drawing of summary in the drawings, in fact control signal wire is connected the light-sensitive element of the pixel so that they can detour, and for example, utilizes the peripheral region of pixel.And, though do not illustrate in the drawings, be used for the output signal line and all separate being connected of the output signal line that is used for second pixel 41 of first pixel 31.
In solid-state imaging apparatus 3 with above-mentioned configuration, to compare with the solid-state imaging apparatus 1 in first example, first pixel 31 and highly sensitive second pixel 41 of the muting sensitivity of arranging with the test board pattern have further been improved picture quality.
As solid-state imaging apparatus 1, shown in 2 and 3, allow first pixel 31 and have the pixel arrangement of more highly sensitive second pixel, 41 drive (referring to Fig. 1 by using than first pixel 31,4 and 6), control first control signal wire 32 of first pixel 31 and second control signal wire 42 of control second pixel 41 and easily in pixel is arranged, independently be connected to relevant row mutually, allow first pixel 31 and second pixel 41 are used dissimilar time for exposure and readout time simultaneously.Can provide the longer time for exposure to obtain more sufficient signal to first pixel 31 thereby use dissimilar time for exposure and readout time, thereby can also provide the shorter time for exposure to prevent saturated to second pixel 41.
Though first pixel 31 and second pixel 41 are two-dimensional arrangements in above-mentioned solid-state imaging apparatus, the photodiode that the present invention can also be applied to first pixel 31 is arranged in by a separated region on the structure of layer under the photodiode of second pixel 41.In this configuration, the part of the photodiode of each first pixel 31 can extend at semiconductor-based the end, and this extension is connected to first control signal wire 32.
Another embodiment of the present invention (the 5th example) will be described below with reference to illustrative arrangement sectional view shown in Figure 7.
As shown in Figure 7, in pixel is arbitrarily arranged (for example, describe with reference to figure 1,4 and 6) optical receiver 211 of a plurality of first pixels 31 and the optical receiver 212 of a plurality of second pixels 41 all be formed in the substrate (for example, the semiconductor-based end or form the substrate of semiconductor layer) 201.Wiring 213 is formed in the zone with the inconsistent substrate 201 of pixel region.First light-filter 215 by the wiring layer 214 that forms wiring 213 be formed on first pixel 31 above.Second light-filter 216, each all has the spectral characteristic different with first light-filter 215, by wiring layer 214 be formed on second pixel 41 above.Protective layer 217 is formed and is used for protecting first light-filter 215 and second light-filter 216, and single element lens 218 is formed on the protective layer 217.
For example, stop the light-filter of infrared light to be incorporated on first pixel 31 as the muting sensitivity pixel with 700nm or higher wavelength, transmit simultaneously and have on wavelength 700nm is incorporated in second pixel 41 as the high sensitivity pixel to the light-filter of the light of 1000nm, thereby the quantity that arrives the incident light of high sensitivity pixel increases, and has allowed higher sensitivity.
As shown in the 5th example,, can mix high sensitivity second pixel 41 and compare signal to obtain higher S/N by using first light-filter 215 and second light-filter 216 that has different spectral characteristics with first light-filter.
Another embodiment of the present invention (the 6th example) will be described with reference to illustrative arrangement sectional view shown in Figure 8.
As shown in Figure 8, in pixel is arbitrarily arranged (for example, describe with reference to figure 1,4) the optical receiver (not shown) of a plurality of first pixels and the optical receiver 222 of a plurality of second pixels 41 all be formed in the substrate (for example, the semiconductor-based end or form the substrate of semiconductor layer) 201.Wiring 213 is formed in the zone with the inconsistent substrate 201 of pixel region.Light-filter 225 by the wiring layer 214 that forms wiring 213 be formed on first pixel 31 above.On the other hand, do not have light-filter be formed on some second pixel 41 above.Protective layer 217 is formed and is used for protecting first light-filter 225, single element lens 218 be formed on pixel protection layer corresponding 218 on.Therefore, do not form light-filter 225 on some highly sensitive second pixels 41, this has increased to the quantity of the incident light of optical receiver 222, allows corresponding pixel to have higher sensitivity.
Another embodiment of the present invention (the 7th example) will be described with reference to the layout shown in the figure 9.
As shown in Figure 9, a plurality of first pixels 31 and a plurality of have than first pixel, 31 more highly sensitive second pixels 41 be formed on for example on the pel array described in Fig. 4 A or the 4B.The light-filter (not shown) be formed on first pixel 31 above.Each light-filter all is the filter with three primary colors one of them and its complementary colours of light.On the other hand, do not have filter be formed on second pixel 41 above.Each light-filter all is for example to transmit one of the three primary colors RGB of light and the filter of its complementary colours.For example, filter all is tactic with GBGB and RGRG at column direction, and these are arranged in line direction and alternately arrange.
Therefore light-filter (filter), each all transmits one of three primary colors RGB, all at random is arranged in as above first pixel 31 of muting sensitivity pixel, so that first pixel can be used to obtain coloured image.
The pixel layout of the demonstration of the solid-state imaging apparatus 4 shown in Fig. 9 is top examples that three primary colors RGB is arranged in first pixel 31 of muting sensitivity.In this configuration, the quantity of the green (G) of eyes sensitivity in color transmission filter device is greater than the quantity of other color.In this example, have the high sensitivity pixel and do not have second pixel 41 of color transmission filter device to have the highest resolution and good S/N ratio, so they can be used for signal processing, for example improvement at edge in the image.
In this example, though described the three primary colors rgb light filter that in digital camera, uses usually, but any other filter that for example has the filter of trichromatic complementary colours also can use, and they also have the spectral characteristic that can be used to produce coloured image.
By the filter that layout on muting sensitivity first pixel 31 has three primary colors RGB or its complementary colours, coloured image can be independent of the high sensitivity pixel and obtain.The high sensitivity pixel can be used for the signal processing (for example image border improvement) by the coloured image of muting sensitivity pixel acquisition.
Below with reference to Figure 10 another embodiment of the present invention (the 8th example) is described.In the following description, be similar to the parts that use in front the description and all have identical reference symbol.In Figure 10, the quantity of electric charge (signal level) is gathered in the vertical axis representative, and trunnion axis is represented the time for exposure.
The solid-state imaging apparatus that disposes the 8th example is so that in the solid-state imaging apparatus of describing in above-mentioned for example first to the 7th example, is used for the control that time for exposure of high sensitivity second pixel 41 and muting sensitivity first pixel 31 can be separate.
For example, as shown in figure 10, because the optical receiver of high sensitivity second pixel 41 receives more incident light, perhaps has bigger photoelectric conversion efficiency, therefore the change rate of electric charge (output signal level) quantity of gathering is greater than the quantity change rate of muting sensitivity first pixel 31.When second pixel 41 level that reaches capacity, the quantity of gathering electric charge (output signal level) is saturated, and this stops further signal to obtain.Second pixel 41 is saturated when Thsat, the time for exposure shorter than Thsat is set can prevent the saturated of second pixel 41.
On the other hand,, be set the time for exposure shorter than Thsat in second pixel 41, will reduce output signal level and therefore reduce the S/N ratio because first pixel 31 has littler change rate.Therefore, but be preferred shorter or equal being longer than the time for exposure that is used for the high sensitivity pixel of time for exposure of being provided with of first pixel 31 than Tlsat.
By control muting sensitivity first pixel 31 and high sensitivity second pixel separate time for exposure, can be to first pixel 31 and the appropriate exposure of second pixel, 41 the two application, thereby allow first pixel 31 to obtain sufficient signal charge, stop second pixel 41 saturated simultaneously.
Another embodiment of the present invention (the 9th example) will be described below with reference to Figure 11.In ensuing description, all has identical reference symbol with the similar assembly that uses in those descriptions in front.In Figure 11, vertical axis represent pixel line number, trunnion axis is represented the time.
The solid-state imaging apparatus that disposes the 9th example makes capable unit as the pixel that is arranged in horizontal direction so that in the solid-state imaging apparatus of describing in first to the 8th example for example, and the electronics that pixel is gathered in cell row all is released, and starts exposure then.
For example, Figure 11 shows the example that discharges the operation of sequential into each row control electric charge, and the time for exposure of control high sensitivity second pixel 41 is independent of the muting sensitivity example of 31 time for exposure of first pixel in sequential.When muting sensitivity pixel and high sensitivity pixel for each row by access with when reading, charge releasing time is different with readout time for each provisional capital.By each row is discharged the electric charge gather and starts exposure, the time for exposure that the time for exposure that is used for the muting sensitivity pixel can be independent of the high sensitivity pixel is set up, and time for exposure each provisional capital for identical sensitivity is identical.
In the solid-state imaging apparatus of the 9th example, be different even work as readout time for each provisional capital, can be by discharging the electric charge that gathers on the basis of being expert at and starting exposure and the time for exposure at random is set.
Another embodiment of the present invention (the tenth example) will be described below with reference to figure 12A and Figure 12 B.In the following description, with those descriptions in front in the similar assembly that uses all have identical reference symbol.Figure 12 A shows the configuration of the demonstration of image element circuit, and Figure 12 B shows strobe pulse SEL, replacement pulse RST in readout time and the charge releasing time and the control signal of transmission pulse TRG.
The solid-state imaging apparatus of the tenth example is applicable to the solid-state imaging apparatus of describing in first to the 9th example for example.In the solid-state imaging apparatus of the tenth embodiment, gather electronics and be released then the operation that starts exposure and will be controlled at the independently time for the arrangement of first pixel 31 and second pixel 41.
For example, Figure 12 A shows the configuration of the demonstration of image element circuit, and Figure 12 B shows strobe pulse SEL, replacement pulse RST in readout time and the charge releasing time and the control signal of transmission pulse TRG.Image element circuit shown in Figure 12 A has and is similar to the pixel circuit configuration of describing in first example in fact, and comprises photo-electric conversion element, and for example photodiode 21, and four transistors, for example, transmission transistor 22, reset transistor 23, amplifier transistor 24 and selection transistor 25.In the circuit arrangement in solid-state imaging apparatus, selecting transistor 25 to be omitted or amplifier transistor 24 can be discharged electric charge at any time by three transistor arrangement of the shared configuration of a plurality of pixels.
In the solid-state imaging apparatus of the tenth example, though when readout time for each provisional capital difference, the time for exposure also can be for the separate any setting of muting sensitivity first pixel 31 and high sensitivity second pixel 41.
Below with reference to Figure 13 another embodiment of the present invention (the 11 example) is described.In the following description, the assembly that is similar in those use descriptions in front has identical reference symbol.Figure 13 shows the operation that electric charge is discharged simultaneously from a plurality of row.Among Figure 13, vertical axis represent pixel line number and trunnion axis are represented the time.
The solid-state imaging apparatus that disposes the 11 example is so that in the solid-state imaging apparatus of describing in the 9th to the tenth example for example, and the electronics that gathers is released and the operation that starts exposure is then controlled simultaneously for a plurality of row.
As shown in figure 13, in all muting sensitivity pixel columns and high sensitivity pixel column, side by side discharge electric charge and the startup exposure of gathering.Like this, the time of startup exposure cycle can be identical for a plurality of row.Figure 13 shows the example that mechanical shutter is used to obtain the identical exposure cycle termination time.Also can finish the termination of exposure cycle by electron transfer and the reservation of gathering electric charge.
As shown in the solid-state imaging apparatus of the 11 example,, can be set the time for exposure arbitrarily by a plurality of row side by side being discharged the electronics that gathers and starting exposure even have identical exposure termination time or readout time when a plurality of provisional capitals.Therefore, even in (global) of overall situation shutter operation, the time for exposure that can be provided for muting sensitivity first pixel 31 is independent of the time for exposure of high sensitivity second pixel 41.
Below with reference to Figure 11 and Figure 13 another embodiment of the present invention (the 12 example) is described.In the following description, be similar to the assembly that uses in those descriptions in front and all have identical reference symbol.
Dispose the solid-state imaging apparatus of the 12 example so that in the solid-state imaging apparatus of in the 8th to the 11 example for example, describing, be released in the electronics that gathers in second pixel 41, start exposure then in the time that is later than first pixel 31.
Shown in Figure 11 and 13, by the time of the electric charge releasing operation of muting sensitivity pixel being carried out electric charge releasing operation (the exposure cycle termination time is identical for high sensitivity with the muting sensitivity pixel) for the high sensitivity pixel being later than, can reduce time for exposure for the high sensitivity pixel.
Solid-state imaging apparatus according to the 12 example, for second pixel 41 advantage that the sufficient signal charge of permission muting sensitivity first pixel, 31 acquisitions can be provided than the 31 shorter time for exposure of first pixel is set, stops the saturated of high sensitivity second pixel 41 simultaneously.
Below with reference to Figure 14 and 15 another embodiment of the present invention (the 13 example) is described.In the following description, the assembly that is similar in those use descriptions in front has identical reference symbol.Figure 14 shows the sequential example that high sensitivity second pixel 41 is operated in the frame per second that is higher than muting sensitivity first pixel 31.Figure 15 shows and merges a plurality of frames in high speed to improve the example of dynamic range.In Figure 15, the quantity of electric charge (signal level) is gathered in the vertical axis representative, and trunnion axis is represented the incident light intensity.
Dispose the solid-state imaging apparatus of the 13 example so that in the solid-state imaging apparatus of describing, the read rate of high sensitivity second pixel 41 is higher than the read rate of muting sensitivity first pixel 31 in the first to the 12 example for example.In other words, the value of first pixel 31 is read once, repeatedly reads the signal value and the addition of second pixel 41 simultaneously at a high speed.
As shown in Figure 14, in this example, drive second pixel 41 with the frame per second that exceeds 31 4 times of first pixels.The frame of reading from second pixel 41 by a frame period that is added in first pixel 31 mutually, just, shown in addition Figure 14 from four frame FH1 of second pixel 41 to FH4, obtain as shown in figure 15 signal level and the relation between the incident intensity.
In Figure 15, the line L1 of first pixel of indication muting sensitivity pixel illustrates the signal level of first pixel 31 and the relation between the incident intensity, and the expression signal level increases in proportion according to incident intensity.As its level Q that reaches capacity
SThe time signal level saturated, and no longer handle incident intensity greater than saturation level.
On the other hand, in Figure 15, the line L2-a of second pixel 41 of indication high sensitivity pixel illustrates the relation between second pixel, 41 signal levels and the incident intensity, and the N frame of suing for peace as can be seen reaches the NQ that will handle to allow signal
S, because the saturation of every frame is Q
SIn addition, by postponing the time for exposure that charge releasing time reduces each frame, shown in the line L2-b of indication high sensitivity second pixel 41 among Figure 15, sensitivity can be increased the incident intensity that will handle by the minimizing of equivalence (quantity of incident light is reduced in the exposure cycle).Making Ta is the time for exposure, and Tb is the time for exposure, and then change rate is Tb/Ta.
According to the solid-state imaging apparatus of the 13 example, the time for exposure that reduces high sensitivity second pixel 41 provides and has allowed muting sensitivity first pixel 31 to obtain the advantage that enough signal charges prevent that simultaneously second pixel 41 is saturated.In addition, a plurality of frames of obtaining at a high speed of addition second pixel 41 provide average and the random noise that reduces, the advantage that causes higher S/N ratio.And, because the exposure cycle consistent with the exposure cycle of a plurality of frames of second pixel 41 (not having deviation between the exposure cycle of first pixel 31 and second pixel 41) of first pixel, when being the object imaging of moving, the deviation of the time for exposure that reduces first pixel 31 and second pixel 41 and the advantage that does not overlap are provided.
Another embodiment of the present invention (the 14 example) will be described below with reference to Figure 16.In the following description, all has identical reference symbol with assembly like the component class that uses previously.Figure 16 shows the example of operation that a plurality of frames of the reading scan of muting sensitivity first pixel 31 and high sensitivity second pixel 41 overlap.In Figure 16, vertical axis represent pixel line number, trunnion axis is represented the time.
The solid-state imaging apparatus that disposes the 14 example is so that in the solid-state imaging apparatus of describing in the 13 example, and a plurality of vertical-scan periods of the vertical-scan period of muting sensitivity first pixel 31 and high sensitivity second pixel 41 overlap.
Figure 16 shows the operation that a plurality of vertical-scan periods of vertical-scan period of muting sensitivity first pixel 31 and high sensitivity second pixel 41 overlap.In the operation of this demonstration, as shown in Figure 14, drive second pixel 41 with the frame per second that is higher than 31 4 times of first pixels.By using the operation shown in Figure 16, though frame per second is identical with the frame per second that drives operation in Figure 14, the readout interval Tread that is used for first pixel 31 increases, and allows longer Tread/m, and it is the time that is used to read delegation.
Tread is the time that is used to read a frame.When accessed, be necessary in Tread/m, to read delegation in an image duration when m is capable.By addition N frame, signal level Qsig becomes N * Qsig, and the square root of random noise Qnoise becomes √ N * Qnoise simultaneously
2Therefore, provide the S/N ratio has been increased N/ √ (N) doubly and reduce the advantage of random noise.
According to the solid-state imaging apparatus of the 14 example,, the readout interval of each row of muting sensitivity first pixel 31 guarantees A-D conversion and the advantage of signal processing longer time because than the length of high sensitivity second pixel 41, providing.Therefore, more accurate A-D conversion can be applied to complicated signal processing to have on the muting sensitivity pixel of worse S/N than (comparing with second pixel 41), and this has facilitated higher picture quality.
Another embodiment of the present invention (the 15 example) will be described below with reference to Figure 17 and 18.In the following description, all has identical reference symbol with assembly like the component class that uses previously.Figure 17 shows the example of using the polytype time for exposure.In Figure 17, vertical axis represent pixel line number, trunnion axis is represented the time.Figure 18 shows the characteristic of the image of the merging of using the polytype time for exposure.In Figure 18, the quantity of electric charge (signal level) is gathered in the vertical axis representative, and trunnion axis has been represented the incident light intensity.
The solid-state imaging apparatus that disposes the 15 example is so that in the solid-state imaging apparatus of describing in the 14 example, and the time for exposure of two or more types was set for a plurality of vertical-scan periods of highly sensitive second pixel 41.
As shown in Figure 17, a plurality of frames for high sensitivity second pixel 41 are provided with the dissimilar time for exposure.Make TH1 be the time for exposure of frame FH1 to FH4 to TH4, the minimizing time for exposure can reduce the quantity at the incident light of exposure cycle, has therefore increased the incident light intensity that will handle.Just, compare with incident intensity, the change rate of gathering amount of charge can reduce.
Figure 18 shows when satisfying the time for exposure, and for example during Xia Mian formula: TH1＞TH2＞TH3＞TH4, incident intensity and frame FH1 are to the relation between the amount of charge gathered of FH4.The incident light intensity that will handle is maximum in frame FH4, with the sensitivity maximum among the time frame FH1.Be shown in dotted line the combined signal of FH1 among Figure 18 to FH4.Therefore, by in the little zone of incident intensity, using higher sensitivity executable operations, reduce the quantity of incident light in the big zone of incident intensity simultaneously so that stop saturated.
Solid-state imaging apparatus according to the 15 example, be applied to a plurality of frames by time for exposure, can obtain a plurality of images that each all has the difference relation between sensitivity and saturated quantity into second pixel 41 of high sensitivity pixel with two or more types.Because in sensitivity with depend between the saturated quantity of length of time for exposure and have trade-off relation, in sensitivity mode of priority and saturated quantity mode of priority, merge two or more images and can obtain high sensitivity and wide dynamic range two.
Another embodiment of the present invention (the 16 example) will be described below with reference to Figure 19 and 20.In the following description, all has identical reference symbol with assembly like the component class that uses previously.Figure 19 shows the example of polytype time for exposure alternate application.In Figure 19, vertical axis represent pixel line number, trunnion axis is represented the time.Figure 20 shows the characteristic of the image of the merging of using the polytype time for exposure.In Figure 20, the quantity of electric charge (signal level) is gathered in the vertical axis representative, and trunnion axis is represented the incident light intensity.Figure 20 also shows the sequential chart of the image of the merging that is accompanied by exposure cycle.
Dispose the solid-state imaging apparatus of 16 examples so that in the solid-state imaging apparatus that the 15 example is described, the time for exposure of two or more types can be arranged alternately a plurality of vertical-scan periods of second pixel 41 that is used for the high sensitivity pixel.
Be provided with in above-mentioned frame in the operation of dissimilar time for exposure, incident intensity is depended in the variation significantly of imaging time, so the image that merges suffers deviation in the time for exposure of the brightness of depending on moving object.In order to address this problem, as shown in Figure 19, the time for exposure of two or more types can alternately be used for a plurality of frames of high sensitivity second pixel 41.In this example, be respectively the time for exposure TH2 that frame FH3 and FH4 are provided for the time for exposure TH1 of frame FH1 and are used for frame FH2.
As shown in Figure 20, each all has the FH1 and the FH3 of identical incident intensity, and FH2 and FH4 can handle corresponding object.Because can the corresponding time for exposure type of alternate application, can in time overlap mutually at the image of the merging 1 of FH1 and FH3 with at the image of the merging 2 of FH2 and FH4, can reduce not overlapping of time for exposure in the combined diagram picture.
In the solid-state imaging apparatus of the 16 example, because each a plurality of frame that all have a different sensitivity can obtain at different time, the image capture time depends on the brightness of object and different mutually.Therefore, for moving object, have different exposure cycles by alternately the catching frame of (having produced the deviation of time for exposure thus in corresponding time for exposure type in the image that obtains) provides the advantage that reduces the deviation of time for exposure for moving object.This has solved the problem of solid-state imaging apparatus in the 14 example, that is, compare with the FH1 image, and addition frame FH1 has changed imaging times of some row significantly and has been created in the deviation between first pixel 31 and second pixel 41 in the image of moving object to FH4.
Another embodiment of the present invention (the 17 example) will be described to 24 below with reference to Figure 21 and 22.In the following description, all has identical reference symbol with assembly like the component class that uses previously.Figure 21 and 22 to 24 shows the example of the method for the selection frame that is used to merge.In Figure 21 and 22 to 24, vertical axis is represented the line number of high sensitivity second pixel and muting sensitivity first pixel, and trunnion axis is represented the time.
The solid-state imaging apparatus that disposes the 17 example is so that in the solid-state imaging apparatus of describing in the 14 to 16 example, merge the output of a plurality of frames of second pixel 41, from the frame that overlaps with the exposure cycle of first pixel 31 at least, select a plurality of frames of making up for merging for each row.
How Figure 21 selects frame when showing a plurality of frame of selecting to make up when the output of a plurality of frames that merge high sensitivity second pixel 41 with for each row.In each row of second pixel 41, selection and merging are included in the frame in first pixel 31 (dashed area among Figure 21) exposure cycle.Row AH1 is separated at the line of the readout time that is used to indicate first pixel 31 with on the row that is used to indicate the line of the readout time of second pixel 41 to intersect to the scope of AH4.For example, for the row of scope AH1, frame FH1 is used for merging to FH4, and for the row of scope AH2, frame FH2 is used for merging to FH5 simultaneously.Like this, can reduce not overlapping of time for exposure.
As shown in figure 22, by using each scope AH1 to the central row of AH4 (dash area) row as the frame that is used to change selection, the exposure cycle of combined diagram picture that is used for high sensitivity second pixel 41 is near being used for the exposure cycle of muting sensitivity first pixel 31, and what make the time for exposure does not overlap minimizing.
In addition, as shown in figure 23, carry out to select fully to cover for use in the frame that merges high sensitivity second pixel 41 exposure cycle of muting sensitivity first pixel 31, what make the time for exposure does not overlap minimizing.It should be noted that use also can use front or back at the combined diagram picture at the frame of second pixel 41 at the edge of the exposure cycle of muting sensitivity pixel.
The quantity of selecteed frame is determined by the length of muting sensitivity exposure cycle.When the time for exposure that is used for first pixel 31 when the operation of demonstration shown in Figure 22 is reduced, the quantity of the frame of use changes according to the exposure cycle of first pixel 31 shown in Figure 24, so that has reduced not overlapping of time for exposure.
According to the solid-state imaging apparatus of the 17 example, when a plurality of vertical cycles of vertical-scan period of muting sensitivity first pixel 31 and high sensitivity second pixel 41 overlap, produced not overlapping of time for exposure.Provide the advantage that does not overlap that reduces the time for exposure from a plurality of frames of second pixel 41 for the frame that each row selection will be used to merge.
Another embodiment of the present invention (the 18 example) will be described below with reference to Figure 21 and 25.In the following description, all has identical reference symbol with assembly like the component class that uses previously.Figure 25 shows the example of how selecting and weighing the frame that is used to merge.In Figure 25, vertical axis is represented the line number of high sensitivity second pixel and muting sensitivity first pixel, and trunnion axis is represented the time.
The solid-state imaging apparatus that disposes the 18 example is so that in the solid-state imaging apparatus of describing in the 17 example, and different weight coefficient of each row is multiply by in the output of a plurality of frames of second pixel 41, then exports by the addition weighting.
Just, as shown in figure 21, by the output of a plurality of frames of second pixel 41 being multiply by different weight coefficient of each row, then addition weighting output, can reduce the time for exposure do not overlap discontinuous.For example, as described in the 17 example, in the method for selecting the frame conversion, in selecting the row at conversion place, frame has the discontinuous of amount that the time for exposure do not overlap, for example, and the border of AH1 and AH2 among Figure 21.According to this example, will reduce this discontinuous.
As shown in figure 25, select to have covered a plurality of frames of high sensitivity second pixel 41 of front and back part of the exposure cycle of muting sensitivity first pixel (dash area) for each row.Concentrate on the i that is expert at now, the exposure cycle T1 of first pixel 31 is included in a plurality of frame FH1 of second pixel 41 in the exposure cycle of FH5.Have only the Ta of exposure cycle of the frame FH1 of second pixel 41 and FH5 and Tb (as the border of the exposure cycle of first pixel 31) and the exposure cycle of first pixel 31 to overlap.Make now W2 to W4 as the weight of the frame FH2 in the exposure cycle that is included in first pixel 31 fully to FH4, the signal level that obtains from frame FH1 to FH5 is multiplied by as frame FH1 to the W1:W2:W3:W4:W5=Ta:Th:Th:Th:Tb of the weight of FH5 and be added to the combined diagram picture.Because the weight that multiplies each other of boundary frame is for the continuous change of each row, thus reduced the time for exposure do not overlap and discontinuous.
Solid-state imaging apparatus according to the 18 example, when combined diagram as the time, frame to each row multiply by different weight coefficients, follow the frame of addition weighting, the advantage that time for exposure of row of the selection of the frame that elimination is used for merging in conversion do not overlap (discontinuous) is provided, and it is problem in the 17 example solid-state imaging apparatus that the described time for exposure does not overlap.
Figure 26 show according to the first to the 18 example the sectional view of camera of embodiment.Camera according to this embodiment is the example that can carry out the video camcorder of imaging to motion picture.
Camera according to this embodiment comprises solid-state imaging apparatus 1, optical system 510, shutter 511, drive circuit 512 and signal processing circuit 513.
Should be appreciated that to those skilled in the art and depend on design needs and other factors, in the scope of appended claims and its equivalent substitution, various changes, combination and sub-portfolio and alternative can the generation.
Claims (20)
1, a kind of solid-state imaging apparatus comprises:
The array that a plurality of first pixels and a plurality of ratio first pixel have more highly sensitive second pixel;
Control first control signal wire of first pixel; With
Control second control signal wire of second pixel,
Wherein can drive first control signal wire and second control signal wire independently of each other.
2, according to the solid-state imaging apparatus of claim 1, wherein the wiring of the output signal line of first pixel is independent of the output signal line of second pixel.
3, according to the solid-state imaging apparatus of claim 1, wherein with described a plurality of first pixel two-dimensional arrangements and with described a plurality of second pixel two-dimensional arrangements and
The two-dimensional arrangements of arranging the two-dimensional arrangements of first pixel and second pixel is so that their displacement half-pixel pitches mutually on the x of the xy of two-dimensional arrangements coordinate plane and y direction.
4, according to the solid-state imaging apparatus of claim 1, wherein first pixel and second pixel are arranged with the test board pattern.
5, according to the solid-state imaging apparatus of claim 1, further comprise:
First light-filter, its be formed on first pixel above; With
Second light-filter, its be formed on second pixel above, described second light-filter has the spectral characteristic that is different from first light-filter.
6, according to the solid-state imaging apparatus of claim 1, wherein said a plurality of second pixels comprise the pixel that has light-filter above it and do not have the pixel of light-filter above it.
7, according to the solid-state imaging apparatus of claim 5, described first light-filter is the filter with trichromatic one of them color He its complementary colours of light.
8, solid-state imaging apparatus according to claim 1, the exposure cycle control that wherein is independent of second pixel is used for the exposure cycle of first pixel.
9, solid-state imaging apparatus according to claim 1 wherein makes capable unit become to be arranged in first and second pixels of horizontal direction, accumulates in electronics in the pixel of cell row and is released and starts exposure then.
10, solid-state imaging apparatus according to claim 1 wherein gathers electronics with the time control of the arrangement that is independent of first pixel and second pixel and is released the operation that starts exposure then.
11, solid-state imaging apparatus according to claim 1, capable unit is become be arranged in first and second pixels of horizontal direction, the electronics that gathers in the pixel in this cell row to be released and the operation that starts exposure then for a plurality of row Be Controlled simultaneously.
12, solid-state imaging apparatus according to claim 1, wherein the electronics that gathers in second pixel is released and starts then in the time that is later than first pixel and exposes.
13, solid-state imaging apparatus according to claim 1, wherein the read rate of second pixel is higher than the read rate of first pixel.
14, according to the solid-state imaging apparatus of claim 13, wherein a plurality of vertical-scan periods of the vertical-scan period of first pixel and second pixel overlap.
15,, wherein be set the time for exposure of two or more types for a plurality of vertical-scan periods of second pixel according to the solid-state imaging apparatus of claim 13.
16,, wherein be arranged alternately the time for exposure of two or more types for a plurality of vertical-scan periods of second pixel according to the solid-state imaging apparatus of claim 15.
17, solid-state imaging apparatus according to claim 14, wherein the output of a plurality of frames of second pixel is merged, and selects to be used to merge and a plurality of frames of being combined from the frame that overlaps with the exposure cycle of first pixel at least for each row.
18, solid-state imaging apparatus according to claim 17 wherein multiply by the output of a plurality of frames of second pixel different weight coefficients of each row, and addition thereafter is through the output of weighting.
19, a kind of method that is used to drive solid-state imaging apparatus, described solid-state imaging apparatus comprise,
The array that a plurality of first pixels and a plurality of ratio first pixel have more highly sensitive second pixel,
Control first pixel first control signal wire and
Control second control signal wire of second pixel,
This method comprises the step that drives first control signal wire and second control signal wire independently of one another.
20, a kind of camera comprises:
The array that a plurality of first pixels and a plurality of ratio first pixel have more highly sensitive second pixel;
Control first control signal wire of first pixel; With
Control second control signal wire of second pixel,
Wherein can drive first control signal wire and second control signal wire independently of each other.
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| JP4487944B2 (en) | 2010-06-23 |
| US7750278B2 (en) | 2010-07-06 |
| EP2265001A2 (en) | 2010-12-22 |
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| CN101079966B (en) | 2011-09-28 |
| TW200746804A (en) | 2007-12-16 |
| EP1819151B1 (en) | 2016-05-11 |
| KR101295923B1 (en) | 2013-08-13 |
| EP2265001A3 (en) | 2015-01-07 |
| EP1819151A1 (en) | 2007-08-15 |
| JP2007214832A (en) | 2007-08-23 |
| KR20070081107A (en) | 2007-08-14 |
| US20080173794A1 (en) | 2008-07-24 |
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