CN101075526A - Planar display device with reverse + shaped sided-grid controlled cathode structure and its production - Google Patents
Planar display device with reverse + shaped sided-grid controlled cathode structure and its production Download PDFInfo
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Abstract
This is a flat displayer of encircled cathode grid in shape T and its production process. It includes a sealed vacuum chamber formed by a anodic glass panel, a cathode glass panel and surrounded glass frame; on the anodic glass panel is a conducting layer coated with fluorescent; a supporting wall between the anodic and cathode panel and a getter; on the cathode glass panel are a grid down-lead layer, carbon nanotube and encircled grids in shape T, which is capable of increasing the control function and efficiency of the grid, so increase the display quality.
Description
Technical field
The invention belongs to the mutual crossing domain in technical field of flat panel display, microelectronics science and technology field, vacuum science and technical field and nanometer science and technology field, relate to the element manufacturing of panel field emission display, be specifically related to the content of element manufacturing aspect of the panel field emission display of carbon nanotube cathod, particularly a kind of flat-panel monitor of reverse+shaped sided-grid controlled cathode structure and manufacture craft thereof.
Background technology
Field emission flat-panel display is a kind of novel flat-plate display device, be applicable to the screen display equipment in various places, wall hanging color television set as command centre, domestic television set, meeting room, studio etc., large-scale open air and indoor billboard, the transport information of station, airport, harbour and stock market information etc.The field-emitter display of carbon nanotube cathod utilizes the field emission principle of carbon nano-tube to develop, combine the flat panel display device of the high image quality characteristics of cathode-ray tube display, have high brightness, high-resolution, low in energy consumption, the visual angle is wide, be suitable for the wide characteristics of warm area, has become the hot issue in international flat panel display field.
At present, in the middle of most carbon nanotube cathod field emission display device, all adopted grid structure to be positioned at the tactic pattern of carbon nanotube cathod superstructure, its advantage is a lot, but the disadvantage that is difficult to overcome is arranged also, high as the control gate pole tension, thus be difficult to combine with conventional integrated drive electronics; Grid current is too bigger than normal, thereby causes the display brightness of integral device to decrease; The manufacture difficulty of carbon nanotube cathod is very big, can not guarantee the show uniformity of device image; Or the like.Though can be by reducing the distance between grid structure and the carbon nanotube cathod structure, make it possible under lower grid operating voltage, just can form enough big electric field strength on the carbon nanotube cathod top, reach the purpose of further reduction grid operating voltage, but this also will be subjected to the restriction of the factors such as insulation degree, manufacture craft and material properties of insulating material simultaneously, otherwise is easy to cause the electrical break down of device.Therefore, in the manufacturing process of practical devices, adopt which kind of control gate electrode structure pattern actually, adopt which kind of manufacturing materials, how further to reduce the grid operating voltage, or the like problem, all need to think deeply in earnest and study.
In addition, in the panel field emission display spare of three-stage structure, guaranteeing that grid structure has carbon nanotube cathod under the prerequisite of good control action, also need to reduce as much as possible the total device cost, carry out reliable and stable, with low cost, function admirable, high quality devices is made.
Summary of the invention
The objective of the invention is to overcome the shortcoming and defect that exists in the above-mentioned flat-panel display device and provide a kind of with low cost, manufacturing process is reliable and stable, be made into the power height, the flat-panel monitor and the manufacture craft thereof of reverse+shaped sided-grid controlled cathode structure simple in structure.
The object of the present invention is achieved like this, comprise by anode glass panel, cathode glass faceplate and all around glass enclose the sealed vacuum chamber that frame constitutes; Be arranged on anode conductive layer and the phosphor powder layer of preparation on anode conductive layer on the anode glass panel; Supporting wall structure between anode glass panel and cathode glass faceplate and getter subsidiary component; Cathode glass faceplate is provided with grid lead layer, carbon nano-tube and reverse+shaped sided-grid controlled cathode structure.
The backing material of described reverse+shaped sided-grid controlled cathode structure is a glass, as soda-lime glass, Pyrex, just cathode glass faceplate; The insulation paste layer of the printing on the cathode glass faceplate forms block layer; Metal level after the etching above the block layer forms the cathode leg layer; The insulation paste layer of the printing above the cathode leg layer forms negative electrode rising layer; Negative electrode rising layer will cover cathode leg layer and vacant block layer part; There is small sircle hole in the negative electrode rising layer, as the passage of negative electrode extended line layer; The silver slurry layer of the printing in the negative electrode rising layer in the small sircle hole forms negative electrode extended line layer; Negative electrode extended line layer and cathode leg layer are interconnected; The insulation paste layer of the printing above the negative electrode rising layer forms grid and increases layer; The upper and lower surface that grid increases layer is the plane, and lower surface will cover the upper surface of negative electrode rising layer; Grid increases and has circular apertures in the layer, and promptly the circular apertures upper surface that increases layer at grid forms the circular face of a hollow, and the madial wall of circular apertures is a kind of barrel surface perpendicular to cathode glass faceplate, and the bottom of circular apertures will expose negative electrode extended line layer hole; The metal level that grid increases after the etching on the madial wall of layer circular apertures forms regulation and control grid one deck; Regulation and control grid one deck will be covered with grid and increase layer surface of circular apertures madial wall; The insulation paste layer of the printing above regulation and control grid one deck forms additional gate and increases layer; Additional gate increases layer and depends on the regulation and control grid one layer surface, presents around the inboard that the circular ring type shape is looped around circular apertures; Lower surface and negative electrode rising layer that additional gate increases layer are in contact with one another, the upper surface that additional gate increases layer is an inclined plane, increase the intersection of layer and regulation and control grid one deck from additional gate, downward-sloping gradually, till arriving the interior side-wall surface position that additional gate increases layer; The metal level that additional gate increases after the etching on layer top incline forms two layers of regulation and control grids; Two layers of regulation and control grids and regulation and control grid one deck are interconnected; The metal level that grid increases after the top etching of layer forms the grid lead layer; Grid lead layer and regulation and control grid one deck are interconnected; The insulation paste layer of the printing above the grid lead layer forms the grid cover layer; The metal level that grid increases after the etching on the lower surface of layer circular apertures forms the negative electrode transition zone; The negative electrode transition zone presents disc face type shape, depends on the circular apertures lower surface, and its lower surface and negative electrode extended line layer are interconnected; The silver slurry layer of the printing above the negative electrode transition zone forms and promotes layer; Promote layer and present the cylinder type shape, rise sheer from the center of negative electrode transition zone, expose the negative electrode transition zone of ring-type on every side; The height that promotes layer is identical with the topnotch that additional gate increases layer; Promote on the laminar surface and the formation of the metal level after the lip-deep etching of negative electrode transition zone cathode conductive layer; Cathode conductive layer is covered with the surface of lifting layer and the residue upper surface of negative electrode transition zone; Made of carbon nanotubes is on cathode conductive layer.
The fixed position of described reverse+shaped sided-grid controlled cathode structure is for being fixed on the cathode glass faceplate; The cathode leg layer is metal gold, silver, aluminium, copper, molybdenum, chromium, tin, lead, indium; Negative electrode extended line layer is metal gold, silver, aluminium, molybdenum, chromium, tin, copper, indium; The negative electrode transition zone is metal gold, silver, aluminium, molybdenum, chromium, tin; Cathode conductive layer is metallic iron, cobalt, nickel; The trend of the trend of grid lead layer and cathode leg layer is vertical mutually; The grid lead layer is metal gold, silver, aluminium, molybdenum, chromium; Regulation and control grid one deck is metal gold, silver, aluminium, molybdenum, chromium, tin; The regulation and control grid is metal gold, silver, aluminium, molybdenum, chromium, tin for two layers.
A kind of manufacture craft of flat-panel monitor of reverse+shaped sided-grid controlled cathode structure, its manufacture craft is as follows:
1) making of cathode glass faceplate: whole plate glass is carried out scribing, produce cathode glass faceplate;
2) making of block layer: printing insulation paste layer on cathode glass faceplate forms block layer behind baking, sintering process;
3) making of cathode leg layer: on block layer, make metal level, form the cathode leg layer after the etching;
4) the negative electrode making of layer that raises: printing insulation paste layer on the cathode leg layer forms the negative electrode layer that raises behind baking, sintering process;
5) making of negative electrode extended line layer: in negative electrode raises layer small sircle hole, print silver slurry layer, behind baking, sintering process, form negative electrode extended line layer;
6) grid increases the making of layer: printing insulation paste layer on negative electrode rising layer forms grid and increases layer behind baking, sintering process;
7) making of regulation and control grid one deck: increase at grid and to make a metal level on layer circular apertures madial wall, form regulation and control grid one deck after the etching;
8) additional gate increases the making of layer: printing insulation paste layer on regulation and control grid one layer surface forms additional gate and increases layer behind baking, sintering process;
9) making of two layers of grids of regulation and control: increase in additional gate on the top incline of layer and make a metal level, form two layers of regulation and control grids after the etching;
10) making of grid lead layer: system metal level on grid increases layer is etched into the grid lead layer;
11) the tectal making of grid: printing insulation paste layer on the grid lead layer forms the grid cover layer behind baking, sintering process;
12) making of negative electrode transition zone: increase at grid on the lower surface of layer circular apertures and prepare a metal level, form the negative electrode transition zone after the etching;
13) making of lifting layer: printed silver slurry on the negative electrode transition zone forms the lifting layer through baking, sintering process;
14) making of cathode conductive layer:, form cathode conductive layer after the etching preparing a metal level on the surface that promotes layer and on the surface of negative electrode transition zone;
15) cleaning surfaces of reverse+shaped sided-grid controlled cathode structure is handled: clean is carried out on the surface to reverse+shaped sided-grid controlled cathode structure, removes impurity and dust;
16) preparation of carbon nano-tube: with made of carbon nanotubes on cathode conductive layer;
17) making of anode glass panel: whole plate glass is carried out scribing, produce the anode glass panel;
18) making of anode conductive layer: evaporation one deck tin indium oxide rete on the anode glass panel; Form anode conductive layer after the etching;
19) making of insulation paste layer: at the non-display area printing insulation paste layer of anode conductive layer;
20) making of phosphor powder layer: the viewing area printing phosphor powder layer on anode conductive layer;
21) device assembling: with cathode glass faceplate, anode glass panel, supporting wall structure and all around glass enclose frame and be assembled together, and getter is put in the middle of the cavity, fix with glass powder with low melting point;
22) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
Described step 19 is specially the non-display area printing insulation paste layer at anode conductive layer, is used to prevent the parasitic electrons emission; Through overbaking (baking temperature: 150 ℃, retention time: 5 minutes) afterwards, be placed on and carry out high temperature sintering (sintering temperature: 580 ℃, retention time: 10 minutes) in the sintering furnace.
Described step 20 is specially the viewing area printing phosphor powder layer on anode conductive layer; In the middle of baking oven, toast (baking temperature: 120 ℃, the retention time: 10 minutes).
The device that described step 22 is specially having assembled carries out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
The present invention has following good effect:
At first, in described reverse+shaped sided-grid controlled cathode structure, grid structure has been produced on the side of carbon nanotube cathod structure.When after applying appropriate voltage on the grid structure, will form powerful electric field strength on top, carbon nanotube cathod surface, force carbon nano-tube to launch a large amount of electronics, thereby embodied the controlled function of grid structure.Because the end that the regulation and control grid is two layers can approach carbon nanotube cathod as much as possible, has shortened the distance between the two, thereby can greatly reduce operating voltage of grid structure.Two layers of common formation control gate electrode structure of regulation and control grid one deck and regulation and control grid, be responsible for the electronics emission of controlling carbon nanotube negative electrode, come carbon nanotube cathod is applied voltage from top and side respectively, so just combine the advantage of side grid structure and high grid structure simultaneously, help further to strengthen the control efficiency and the controlled function of grid.
Secondly, in described reverse+shaped sided-grid controlled cathode structure, with carbon nano-tube be produced on cathode conductive layer above, cathode conductive layer then is distributed in the upper surface of lifting layer and the upper surface of negative electrode transition zone, like this, increase the electron emission area of carbon nanotube cathod, made more carbon nanotube cathod all participate in the electronics emission, helped to improve the display brightness of device; The marginal position that has made full use of carbon nanotube cathod is launched the endemism of a large amount of electronics, has improved the electronic transmitting efficiency of carbon nanotube cathod.Grid structure and cathode construction height are integrated together, help lend some impetus to the Highgrade integration development of integral device;
In addition, in described reverse+shaped sided-grid controlled cathode structure, do not adopt special structure fabrication material, do not adopt special device making technics yet, this has just further reduced the cost of manufacture of whole flat-panel display device to a great extent, simplify the manufacturing process of device, can carry out large-area element manufacturing, helped carrying out business-like large-scale production.
Description of drawings
Fig. 1 has provided the vertical structure schematic diagram of reverse+shaped sided-grid controlled cathode structure;
Fig. 2 has provided the transversary schematic diagram of reverse+shaped sided-grid controlled cathode structure;
Fig. 3 has provided the structural representation of the flat-panel screens of reverse+shaped sided-grid controlled cathode structure emitting structural.
Embodiment
The present invention is further described below in conjunction with drawings and Examples, but be not limited to these embodiment.
Described a kind of flat-panel monitor that has reverse+shaped sided-grid controlled cathode structure, comprise by anode glass panel [14], cathode glass faceplate [1] and all around glass enclose the sealed vacuum chamber that frame [19] is constituted; Anode conductive layer [15] and the phosphor powder layer [17] of preparation on anode conductive layer are arranged on the anode glass panel; Supporting wall structure between anode glass panel and cathode glass faceplate [20] and getter [22] subsidiary component; Grid lead layer [10], carbon nano-tube [15] and reverse+shaped sided-grid controlled cathode structure are arranged on cathode glass faceplate.
Described reverse+shaped sided-grid controlled cathode structure comprises that raise layer [4], a negative electrode extended line layer [5], grid of cathode glass faceplate [1], block layer [2], cathode leg layer [3], negative electrode increases layer [6], regulation and control grid one deck [7], additional gate and increase layer [8], regulation and control grid two layers of [9], grid lead layer [10], grid cover layer [11], negative electrode transition zone [12], promote layer [13], cathode conductive layer [14] and carbon nano-tube [15] part.
The backing material of described reverse+shaped sided-grid controlled cathode structure is a glass, as soda-lime glass, Pyrex, just cathode glass faceplate; The insulation paste layer of the printing on the cathode glass faceplate forms block layer; Metal level after the etching above the block layer forms the cathode leg layer; The insulation paste layer of the printing above the cathode leg layer forms negative electrode rising layer; Negative electrode rising layer will cover cathode leg layer and vacant block layer part; There is small sircle hole in the negative electrode rising layer, as the passage of negative electrode extended line layer; The silver slurry layer of the printing in the negative electrode rising layer in the small sircle hole forms negative electrode extended line layer; Negative electrode extended line layer and cathode leg layer are interconnected; The insulation paste layer of the printing above the negative electrode rising layer forms grid and increases layer; The upper and lower surface that grid increases layer is the plane, and lower surface will cover the upper surface of negative electrode rising layer; Grid increases and has circular apertures in the layer, and promptly the circular apertures upper surface that increases layer at grid forms the circular face of a hollow, and the madial wall of circular apertures is a kind of barrel surface perpendicular to cathode glass faceplate, and the bottom of circular apertures will expose negative electrode extended line layer hole; The metal level that grid increases after the etching on the madial wall of layer circular apertures forms regulation and control grid one deck; Regulation and control grid one deck will be covered with grid and increase layer surface of circular apertures madial wall; The insulation paste layer of the printing above regulation and control grid one deck forms additional gate and increases layer; Additional gate increases layer and depends on the regulation and control grid one layer surface, presents around the inboard that the circular ring type shape is looped around circular apertures; Lower surface and negative electrode rising layer that additional gate increases layer are in contact with one another, the upper surface that additional gate increases layer is an inclined plane, increase the intersection of layer and regulation and control grid one deck from additional gate, downward-sloping gradually, till arriving the interior side-wall surface position that additional gate increases layer; The metal level that additional gate increases after the etching on layer top incline forms two layers of regulation and control grids; Two layers of regulation and control grids and regulation and control grid one deck are interconnected; The metal level that grid increases after the top etching of layer forms the grid lead layer; Grid lead layer and regulation and control grid one deck are interconnected; The insulation paste layer of the printing above the grid lead layer forms the grid cover layer; The metal level that grid increases after the etching on the lower surface of layer circular apertures forms the negative electrode transition zone; The negative electrode transition zone presents disc face type shape, depends on the circular apertures lower surface, and its lower surface and negative electrode extended line layer are interconnected; The silver slurry layer of the printing above the negative electrode transition zone forms and promotes layer; Promote layer and present the cylinder type shape, rise sheer from the center of negative electrode transition zone, expose the negative electrode transition zone of ring-type on every side; The height that promotes layer is identical with the topnotch that additional gate increases layer; Promote on the laminar surface and the formation of the metal level after the lip-deep etching of negative electrode transition zone cathode conductive layer; Cathode conductive layer is covered with the surface of lifting layer and the residue upper surface of negative electrode transition zone; Made of carbon nanotubes is on cathode conductive layer.
Described reverse+shaped sided-grid controlled cathode structure is fixed on the cathode glass faceplate; The cathode leg layer can be metallic gold, silver, aluminium, copper, molybdenum, chromium, tin, lead, indium; Negative electrode extended line layer is metal gold, silver, aluminium, molybdenum, chromium, tin, copper, indium; The negative electrode transition zone is metal gold, silver, aluminium, molybdenum, chromium, tin; Cathode conductive layer is metallic iron, cobalt, nickel; The trend of the trend of grid lead layer and cathode leg layer is orthogonal; The grid lead layer is metal gold, silver, aluminium, molybdenum, chromium; Regulation and control grid one deck is metal gold, silver, aluminium, molybdenum, chromium, tin; The regulation and control grid is metal gold, silver, aluminium, molybdenum, chromium, tin for two layers.
A kind of manufacture craft of flat-panel monitor of reverse+shaped sided-grid controlled cathode structure, its manufacture craft is as follows:
1) making of cathode glass faceplate [1]: the dull and stereotyped soda-lime glass of integral body is carried out scribing, produce cathode glass faceplate;
2) making of block layer [2]: printing insulation paste layer on cathode glass faceplate forms block layer behind baking, sintering process;
3) making of cathode leg layer [3]: on block layer, prepare a metal molybdenum layer, form the cathode leg layer after the etching;
4) the negative electrode making of layer [4] that raises: printing insulation paste layer on the cathode leg layer forms the negative electrode layer that raises behind baking, sintering process;
5) making of negative electrode extended line layer [5]: in negative electrode raises layer small sircle hole, print silver slurry layer, behind baking, sintering process, form negative electrode extended line layer;
6) grid increases the making of layer [6]: printing insulation paste layer on negative electrode rising layer forms grid and increases layer behind baking, sintering process;
7) making of regulation and control grid one decks [7]: increase at grid on the madial wall of layer circular apertures and prepare a metallic chromium layer, form regulation and control grid one deck after the etching;
8) additional gate increases the making of layer [8]: printing insulation paste layer on regulation and control grid one layer surface forms additional gate and increases layer behind baking, sintering process;
9) making of regulation and control grid two layers [9]: increase in additional gate on the top incline of layer and prepare a metallic chromium layer, form two layers of regulation and control grids after the etching;
10) making of grid lead layer [10]: on grid increases layer, prepare a metallic chromium layer, form the grid lead layer after the etching;
11) making of grid cover layer [11]: printing insulation paste layer on the grid lead layer forms the grid cover layer behind baking, sintering process;
12) making of negative electrode transition zone [12]: increase at grid on the lower surface of layer circular apertures and prepare a metal molybdenum layer, form the negative electrode transition zone after the etching;
13) making of lifting layer [13]: printed silver slurry on the negative electrode transition zone forms the lifting layer behind baking, sintering process;
14) making of cathode conductive layer [14]:, form cathode conductive layer after the etching preparing a metal nickel dam on the surface that promotes layer and on the surface of negative electrode transition zone;
15) cleaning surfaces of reverse+shaped sided-grid controlled cathode structure is handled: clean is carried out on the surface to reverse+shaped sided-grid controlled cathode structure, removes impurity and dust;
16) preparation of carbon nano-tube [15]: with made of carbon nanotubes on cathode conductive layer;
17) reprocessing of carbon nano-tube: carbon nano-tube is carried out reprocessing, improve field emission characteristics;
18) making of anode glass panel [16]: the dull and stereotyped soda-lime glass of integral body is carried out scribing, produce the anode glass panel;
19) making of anode conductive layer [17]: evaporation one deck tin indium oxide rete on the anode glass panel; Form anode conductive layer after the etching;
20) making of insulation paste layer [18]: at the non-display area printing insulation paste layer of anode conductive layer;
21) making of phosphor powder layer [19]: the viewing area printing phosphor powder layer on anode conductive layer;
22) device assembling: with cathode glass faceplate, anode glass panel, supporting wall structure [20] and all around glass enclose frame [21] and be assembled together, and getter [22] is put in the middle of the cavity, fix with glass powder with low melting point.Around face glass, smeared glass powder with low melting point, fixed with clip;
23) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
Described step 20 is specially the non-display area printing insulation paste layer at anode conductive layer, is used to prevent the parasitic electrons emission; Through overbaking (baking temperature: 150 ℃, retention time: 5 minutes) afterwards, be placed on and carry out high temperature sintering (sintering temperature: 580 ℃, retention time: 10 minutes) in the sintering furnace.
Described step 21 is specially the viewing area printing phosphor powder layer on anode conductive layer; In the middle of baking oven, toast (baking temperature: 120 ℃, the retention time: 10 minutes).
The device that described step 23 is specially having assembled carries out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
Claims (7)
1, a kind of flat-panel monitor of reverse+shaped sided-grid controlled cathode structure, comprise by anode glass panel [14], cathode glass faceplate [1] and all around glass enclose the sealed vacuum chamber that frame [19] is constituted; Be arranged on anode conductive layer [15] and the phosphor powder layer [17] of preparation on anode conductive layer on the anode glass panel; Supporting wall structure between anode glass panel and cathode glass faceplate [20] and getter subsidiary component [22]; It is characterized in that: grid lead layer [10], carbon nano-tube [15] and reverse+shaped sided-grid controlled cathode structure are arranged on cathode glass faceplate.
2, the flat-panel monitor of reverse+shaped sided-grid controlled cathode structure according to claim 1 is characterized in that: the backing material of described reverse+shaped sided-grid controlled cathode structure is a glass, as soda-lime glass, Pyrex, just cathode glass faceplate; The insulation paste layer of the printing on the cathode glass faceplate forms block layer; Metal level above the block layer after the etching forms the cathode leg layer; The insulation paste layer that the cathode leg layer prints above forms negative electrode rising layer; Negative electrode rising layer will cover cathode leg layer and vacant block layer part; There is small sircle hole in the negative electrode rising layer, as the passage of negative electrode extended line layer; The silver slurry layer formation negative electrode extended line layer of printing in the small sircle hole in the negative electrode rising layer; Negative electrode extended line layer and cathode leg layer are interconnected; The insulation paste layer of the printing above the negative electrode rising layer forms grid and increases layer; The upper and lower surface that grid increases layer is the plane, and lower surface will cover the upper surface of negative electrode rising layer; Grid increases and has circular apertures in the layer, and promptly the circular apertures upper surface that increases layer at grid forms the circular face of a hollow, and the madial wall of circular apertures is a kind of barrel surface perpendicular to cathode glass faceplate, and the bottom of circular apertures will expose negative electrode extended line layer hole; The metal level that grid increases after the etching on the madial wall of layer circular apertures forms regulation and control grid one deck; Regulation and control grid one deck will be covered with grid and increase layer surface of circular apertures madial wall; The insulation paste layer that regulation and control grid one deck prints above forms additional gate and increases layer; Additional gate increases layer and depends on the regulation and control grid one layer surface, presents around the inboard that the circular ring type shape is looped around circular apertures; Lower surface and negative electrode rising layer that additional gate increases layer are in contact with one another, the upper surface that additional gate increases layer is an inclined plane, increase the intersection of layer and regulation and control grid one deck from additional gate, downward-sloping gradually, till arriving the interior side-wall surface position that additional gate increases layer; Additional gate increases on layer top incline metal level after the etching and forms two layers of regulation and control grids; Two layers of regulation and control grids and regulation and control grid one deck are interconnected; The metal level that grid increases after the top etching of layer forms the grid lead layer; Grid lead layer and regulation and control grid one deck are interconnected; The insulation paste layer of the printing above the grid lead layer forms the grid cover layer; The metal level that grid increases after the etching on the lower surface of layer circular apertures forms the negative electrode transition zone; The negative electrode transition zone presents disc face type shape, depends on the circular apertures lower surface, and its lower surface and negative electrode extended line layer are interconnected; The silver slurry layer of the printing above the negative electrode transition zone forms and promotes layer; Promote layer and present the cylinder type shape, rise sheer from the center of negative electrode transition zone, expose the negative electrode transition zone of ring-type on every side; The height that promotes layer is identical with the topnotch that additional gate increases layer; Promote on the laminar surface and the formation of the metal level after the lip-deep etching of negative electrode transition zone cathode conductive layer; Cathode conductive layer is covered with the surface of lifting layer and the residue upper surface of negative electrode transition zone; Made of carbon nanotubes is on cathode conductive layer.
3, the flat-panel monitor of reverse+shaped sided-grid controlled cathode structure according to claim 2 is characterized in that: described reverse+shaped sided-grid controlled cathode structure is fixed on the cathode glass faceplate; The cathode leg layer is metal gold, silver, aluminium, copper, molybdenum, chromium, tin, lead, indium; Negative electrode extended line layer is metal gold, silver, aluminium, molybdenum, chromium, tin, copper, indium; The negative electrode transition zone is metal gold, silver, aluminium, molybdenum, chromium, tin; Cathode conductive layer is metallic iron, cobalt, nickel; The trend of the trend of grid lead layer and cathode leg layer is vertical mutually; The grid lead layer is metal gold, silver, aluminium, molybdenum, chromium; Regulation and control grid one deck is metal gold, silver, aluminium, molybdenum, chromium, tin; The regulation and control grid is metal gold, silver, aluminium, molybdenum, chromium, tin for two layers.
4, a kind of manufacture craft of flat-panel monitor of reverse+shaped sided-grid controlled cathode structure is characterized in that, its manufacture craft is as follows:
1) making of cathode glass faceplate [1]: whole plate glass is carried out scribing, produce cathode glass faceplate;
2) making of block layer [2]: printing insulation paste layer on cathode glass faceplate forms block layer behind baking, sintering process;
3) making of cathode leg layer [3]: on block layer, prepare a metal level, form the cathode leg layer after the etching;
4) the negative electrode making of layer [4] that raises: printing insulation paste layer on the cathode leg layer forms the negative electrode layer that raises behind baking, sintering process;
5) making of negative electrode extended line layer [5]: in negative electrode raises layer small sircle hole, print silver slurry layer, behind baking, sintering process, form negative electrode extended line layer;
6) grid increases the making of layer [6]: printing insulation paste layer on negative electrode rising layer forms grid and increases layer behind baking, sintering process;
7) making of regulation and control grid one decks [7]: increase at grid on the madial wall of layer circular apertures and prepare a metal level, form regulation and control grid one deck after the etching;
8) additional gate increases the making of layer [8]: printing insulation paste layer on regulation and control grid one layer surface forms additional gate and increases layer behind baking, sintering process;
9) making of regulation and control grid two layers [9]: increase in additional gate on the top incline of layer and prepare a metal level, form two layers of regulation and control grids after the etching;
10) making of grid lead layer [10]: on grid increases layer, prepare a metal level, form the grid lead layer after the etching;
11) making of grid cover layer [11]: printing insulation paste layer on the grid lead layer forms the grid cover layer behind baking, sintering process;
12) making of negative electrode transition zone [12]: increase at grid on the lower surface of layer circular apertures and prepare a metal level, form the negative electrode transition zone after the etching;
13) making of lifting layer [13]: printed silver slurry on the negative electrode transition zone forms the lifting layer behind baking, sintering process;
14) making of cathode conductive layer [14]:, form cathode conductive layer after the etching preparing a metal level on the surface that promotes layer and on the surface of negative electrode transition zone;
15) cleaning surfaces of reverse+shaped sided-grid controlled cathode structure is handled: clean is carried out on the surface to reverse+shaped sided-grid controlled cathode structure, removes impurity and dust;
16) preparation of carbon nano-tube [15]: with made of carbon nanotubes on cathode conductive layer;
17) making of anode glass panel [16]:, make the anode glass panel to whole plate glass scribing;
18) making of anode conductive layer [17]: evaporation one deck tin indium oxide rete on the anode glass panel; Form anode conductive layer after the etching;
19) making of insulation paste layer [18]: at the non-display area printing insulation paste layer of anode conductive layer;
20) making of phosphor powder layer [19]: the viewing area printing phosphor powder layer on anode conductive layer;
21) device assembling: with cathode glass faceplate, anode glass panel, supporting wall structure [20] and all around glass enclose frame [21] and be assembled together, and getter [22] is put in the middle of the cavity, fix with glass powder with low melting point;
22) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
5, the manufacture craft of the flat-panel monitor of reverse+shaped sided-grid controlled cathode structure according to claim 4 is characterized in that: described step 19 is specially the non-display area printing insulation paste layer at anode conductive layer, is used to prevent the parasitic electrons emission; Through overbaking, baking temperature: 150 ℃, the retention time: 5 minutes, afterwards, be placed on and carry out high temperature sintering in the sintering furnace, sintering temperature: 580 ℃, the retention time: 10 minutes.
6, the manufacture craft of the flat-panel monitor of reverse+shaped sided-grid controlled cathode structure according to claim 4 is characterized in that: described step 21 is specially the viewing area printing phosphor powder layer on anode conductive layer; In the middle of baking oven, toast baking temperature: 120 ℃, the retention time: 10 minutes.
7, the manufacture craft of the flat-panel monitor of reverse+shaped sided-grid controlled cathode structure according to claim 4 is characterized in that: the device that described step 23 is specially having assembled carries out following packaging technology: the sample device is put into baking oven toast; Put into sintering furnace and carry out sintering; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100545906A CN100561649C (en) | 2007-06-19 | 2007-06-19 | The flat-panel monitor of reverse+shaped sided-grid controlled cathode structure and manufacture craft thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100545906A CN100561649C (en) | 2007-06-19 | 2007-06-19 | The flat-panel monitor of reverse+shaped sided-grid controlled cathode structure and manufacture craft thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101075526A true CN101075526A (en) | 2007-11-21 |
| CN100561649C CN100561649C (en) | 2009-11-18 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2007100545906A Expired - Fee Related CN100561649C (en) | 2007-06-19 | 2007-06-19 | The flat-panel monitor of reverse+shaped sided-grid controlled cathode structure and manufacture craft thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100561649C (en) |
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2007
- 2007-06-19 CN CNB2007100545906A patent/CN100561649C/en not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| CN100561649C (en) | 2009-11-18 |
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