CN101071835A - Method for preparing low voltage light-emitting macro ZnO semiconductor single crystal material - Google Patents
Method for preparing low voltage light-emitting macro ZnO semiconductor single crystal material Download PDFInfo
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- CN101071835A CN101071835A CNA2007100416479A CN200710041647A CN101071835A CN 101071835 A CN101071835 A CN 101071835A CN A2007100416479 A CNA2007100416479 A CN A2007100416479A CN 200710041647 A CN200710041647 A CN 200710041647A CN 101071835 A CN101071835 A CN 101071835A
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Abstract
This invention involves a low pressure macroscopic ZnO semiconductor single crystal material preparation method. First fix the crystal material on the substrate, put it in the plasma processor vacuum chamber, pass over H2 gas, regulate vacuum chamber ventilating valve to make the vacuity of the vacuum chamber keep at 10-20Torr, turns on the plasma processor switch, adjust the power of the processor to 170-380W to make hydrogen plasma gas bombard the sample for 30-60minutes to obtain low pressure light-emitting macroscopic ZnO semiconductor single crystal material.
Description
Technical field
The present invention relates generally to a kind of preparation method of low voltage light-emitting macro ZnO semiconductor single crystal material, belongs to Semiconductor Optoeletronic Materials and device technology field.
Technical background
As everyone knows, ZnO has very big application prospect as a kind of semiconductor material with wide forbidden band in opto-electronic device, has therefore caused mondial extensive concern.The main way that changes at present nano-ZnO monocrystal material electrical property in the world is method (the Jr H.He by mixing, et al.Large-Scale Ni-Doped ZnONanowire Arrays and Electrical and Optical Properties, J.Am.CHEM.SOC.2005,127,16376-16377; William K.Liu, et al Spectroscopy of Photovoltaic and PhotoconductiveNanocrystalline Co
2+-Doped ZnO Electrodes, J.Phys.Chem.B 2005,109,14486-14495), luminous technology generally is to make the inner PN junction that produces of ZnO, utilization be the light-emitting diode principle.But, do not utilize above-mentioned technological means to make macroscopical superlong ZnO semiconductor single crystal material under low pressure produce the relevant report of luminescence phenomenon so far.
Summary of the invention
The preparation method who the purpose of this invention is to provide a kind of low voltage light-emitting macro ZnO semiconductor single crystal material of simple and easy to control, suitable large-scale production.
Provided by the present invention is first by macroscopical superlong ZnO semiconductor single crystal material simple process being made it produce being reported in of luminescence phenomenon in the world.The ZnO semiconductor single crystal material for preparing and get produces the technology of luminescence phenomenon under the low-voltage dc power supply effect.Particularly be prepare by the following method and:
The first step: macro ZnO semiconductor single crystal material is fixed on the substrate, puts into the vacuum chamber of plasma processor, be evacuated to vacuum degree 1～5Torr;
Second step: feed H
2Gas is adjusted the vacuum chamber gas valve, makes the vacuum degree in the vacuum chamber remain on 10～20Torr;
The 3rd step: open plasma processor switch, regulating the gas ions processor power is 170～380W, makes hydrogen plasma gas bombardment sample 30～60 minutes, gets low voltage light-emitting macro ZnO semiconductor single crystal material.
Utilize the low voltage light-emitting macro ZnO semiconductor single crystal material of above method preparation under the low-voltage dc power supply effect, to produce luminescence phenomenon.This technology is by carrying out a series of processing to macro ZnO semiconductor single crystal material, makes its resistance value take place obviously to change, by being higher than 2 * 10 before handling
6Ω reduces to 100～5000 Ω.By the present invention, the conductivity of macro ZnO semiconductor single crystal material is strengthened greatly, and finally can be implemented under the normal temperature low pressure, macro ZnO semiconductor single crystal material luminous.
Backing material among the preparation method of low voltage light-emitting macro ZnO semiconductor single crystal material provided by the invention is quartz plate or glass slide.
Raw material can be macroscopical superlong ZnO single-chip, macroscopical superlong ZnO monocrystalline bar or macroscopical superlong ZnO monocrystalline comb etc. among the preparation method of low voltage light-emitting macro ZnO semiconductor single crystal material provided by the invention.
The present invention compares with background technology mainly has following remarkable advantage:
Make the technology of macro ZnO semiconductor single crystal material low pressure generation luminescence phenomenon, with the H that is easy to get
2Be source of the gas, simple and easy to control, repeatability is strong, but is fit to very much the ZnO semiconductor single crystal material of a large amount of system low-voltage luminescences.
Products characteristics of the present invention: the present invention has not only changed macroscopical superlong ZnO crystalline material resistance characteristic greatly, and realized low-voltage luminescence, from emission spectrum as can be seen emitted light be laser, this technology makes macro ZnO semiconductor single crystal material be expected to obtain in fields such as electronic light electric devices important application.
Description of drawings
Fig. 1 is macroscopical superlong ZnO semiconductor single crystal material luminescent spectrum
Embodiment
Below utilization embodiment elaborates to the present invention:
Embodiment 1:
(1) makes substrate with quartz plate, be placed on ultrasonic cleaning and airing in the absolute ethyl alcohol;
(2) will separate single ZnO semiconductor monocrystal structure from macroscopical superlong ZnO single-crystal clusters and be put on the silicon chip, a two ends bonds with the silver slurry; Be put in baking oven, smoked 15 minutes for 120 ℃, under 375 ℃, smoked 20 minutes again; Single ZnO semiconductor monocrystal structure is bonded on the silicon chip firmly, preparation test sample;
(3) sample is put into vacuum chamber, open vacuum pump and be evacuated to 5Torr;
(4) feed H with certain flow
2Gas is adjusted the vacuum chamber gas valve, makes the vacuum degree in the growth room be held constant at 10Torr; Open plasma processor switch, being adjusted to power is 170W; Under this power, keep hydrogen plasma gas bombardment sample to continue 60 minutes;
(5) behind the end of bombardment, close power supply earlier, close source of the gas again, close vacuum pump at last, be prepared into low voltage light-emitting macro ZnO semiconductor single crystal material;
(6) after sample is taken out in the venting back, be connected in the testing apparatus; Open the testing apparatus power supply, regulation voltage, can clear view about 45V to the luminescence phenomenon of macroscopical superlong ZnO semiconductor single crystal material, this and the thermoluminescent continuous spectrum of tungsten filament are inequality fully as can be seen from spectrum.
Embodiment 2:
(1) makes substrate with glass slide, be placed on ultrasonic cleaning and airing in the absolute ethyl alcohol;
(2) will separate single ZnO semiconductor monocrystal structure from macroscopical superlong ZnO single-crystal clusters and be put on the glass slide, a two ends bonds with the silver slurry; Be put in baking oven, smoked 15 minutes for 125 ℃, under 385 ℃, smoked 20 minutes again; Single ZnO semiconductor monocrystal structure is bonded on the glass slide firmly, preparation test sample;
(3) sample is put into vacuum chamber, open vacuum pump and be evacuated to 1Torr;
(4) feed H with certain flow
2Gas is adjusted the vacuum chamber gas valve, makes the vacuum degree in the growth room be held constant at 20Torr; Open plasma processor switch, being adjusted to power is 250W; Under this power, keep hydrogen plasma gas bombardment sample to continue 40 minutes;
(5) behind the end of bombardment, close power supply earlier, close source of the gas again, close vacuum pump at last, be prepared into low voltage light-emitting macro ZnO semiconductor single crystal material;
(6) after sample is taken out in the venting back, be connected in the testing apparatus; Open the testing apparatus power supply, regulation voltage, can clear view about 32V to the luminescence phenomenon of macroscopical superlong ZnO semiconductor single crystal material, this and the thermoluminescent continuous spectrum of tungsten filament are inequality fully as can be seen from spectrum.
Embodiment 3:
(1) makes substrate with quartz plate, be placed on ultrasonic cleaning and airing in the absolute ethyl alcohol;
(2) will separate single ZnO semiconductor monocrystal structure from macroscopical superlong ZnO single-crystal clusters and be put on the silicon chip, a two ends bonds with the silver slurry; Be put in baking oven, smoked 15 minutes for 120 ℃, under 375 ℃, smoked 20 minutes again; Single ZnO semiconductor monocrystal structure is bonded on the silicon chip firmly, preparation test sample;
(3) sample is put into vacuum chamber, open vacuum pump and be evacuated to 2.5Torr;
(4) feed H with certain flow
2Gas is adjusted the vacuum chamber gas valve, makes the vacuum degree in the growth room be held constant at 16Torr; Open plasma processor switch, being adjusted to power is 380W; Under this power, keep hydrogen plasma gas bombardment sample to continue 30 minutes;
(5) behind the end of bombardment, close power supply earlier, close source of the gas again, close vacuum pump at last, be prepared into low voltage light-emitting macro ZnO semiconductor single crystal material;
(6) after sample is taken out in the venting back, be connected in the testing apparatus; Open the testing apparatus power supply, regulation voltage, can clear view about 14V to the luminescence phenomenon of macroscopical superlong ZnO semiconductor single crystal material, this and the thermoluminescent continuous spectrum of tungsten filament are inequality fully as can be seen from spectrum.
Claims (3)
1. the preparation method of a low voltage light-emitting macro ZnO semiconductor single crystal material is characterized in that may further comprise the steps:
The first step: macro ZnO semiconductor single crystal material is fixed on the substrate, puts into the vacuum chamber of plasma processor, be evacuated to vacuum degree 1～5Torr;
Second step: feed H
2Gas is adjusted the vacuum chamber gas valve, makes the vacuum degree in the vacuum chamber remain on 10～20Torr;
The 3rd step: open plasma processor switch, regulating the gas ions processor power is 170～380W, makes hydrogen plasma gas bombardment sample 30～60 minutes, gets low voltage light-emitting macro ZnO semiconductor single crystal material.
2. the preparation method of low voltage light-emitting macro ZnO semiconductor single crystal material as claimed in claim 1 is characterized in that backing material is quartz plate or glass slide.
3. the preparation method of low voltage light-emitting macro ZnO semiconductor single crystal material as claimed in claim 1 is characterized in that macro ZnO semiconductor single crystal material is macroscopical superlong ZnO single-chip, macroscopical superlong ZnO monocrystalline bar or macroscopical superlong ZnO monocrystalline comb.
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| Application Number | Priority Date | Filing Date | Title |
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| CNA2007100416479A CN101071835A (en) | 2007-06-06 | 2007-06-06 | Method for preparing low voltage light-emitting macro ZnO semiconductor single crystal material |
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| CNA2007100416479A CN101071835A (en) | 2007-06-06 | 2007-06-06 | Method for preparing low voltage light-emitting macro ZnO semiconductor single crystal material |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101685776B (en) * | 2008-09-27 | 2011-10-05 | 中国科学院半导体研究所 | Method for improving ohmic contact of ZnO film |
| CN103337592A (en) * | 2013-07-11 | 2013-10-02 | 中国科学院半导体研究所 | Method for improving efficiency of polymer solar cell |
-
2007
- 2007-06-06 CN CNA2007100416479A patent/CN101071835A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101685776B (en) * | 2008-09-27 | 2011-10-05 | 中国科学院半导体研究所 | Method for improving ohmic contact of ZnO film |
| CN103337592A (en) * | 2013-07-11 | 2013-10-02 | 中国科学院半导体研究所 | Method for improving efficiency of polymer solar cell |
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