CN101068846A

CN101068846A - Epoxy resin composition and semiconductor device

Info

Publication number: CN101068846A
Application number: CNA2005800410378A
Authority: CN
Inventors: 小谷贵浩; 关秀俊; 前田将克; 滋野数也; 西谷佳典
Original assignee: Sumitomo Bakelite Co Ltd
Current assignee: Sumitomo Bakelite Co Ltd
Priority date: 2004-11-30
Filing date: 2005-11-25
Publication date: 2007-11-07
Anticipated expiration: 2025-11-25
Also published as: JP2006152185A; CN101068846B

Abstract

An epoxy resin composition for semiconductor encapsulation which comprises (A) a crystalline epoxy resin, (B) a phenol resin represented by the general formula (1), wherein R1 and R2 are each independently hydrogen or alkyl having 1 to 4 carbon atoms and R1's or R2's may be the same or different from each other; a is an integer of 0 to 4; b is an integer of 0 to 4; c is an integer of 0 to 3; and n is a number of 0 to 10 on average, (C) a (co)polymer comprising structural units derived from butadiene or a derivative of the (co)polymer, and (D) 80 to 95% by weight of an inorganic filler based on the composition.

Description

Composition epoxy resin and semiconductor devices

Technical field

The present invention relates to a kind of composition epoxy resins and semiconductor devices for packaged semiconductor.Specifically, the present invention is suitable for surface mount type semiconductor device (area mounting typesemiconductor device), wherein semiconductor chip being installed on one side in printed wiring board or die-attach area, and substantially only in its one side by installation with resin-encapsulated.

Background technique

Recently it is intended to size reduction, mitigates weight and proposes high performance market for electronic devices, makes to lead to the higher semiconductor of integrated level.Due to the rapidly development of the surface mounting technique of semiconductor devices, make to develop a kind of surface mount type semiconductor device recently, and it has taken for the semiconductor devices with traditional structure.

The demand that the trend of the thinning of the reduction and its thickness of dimensions of semiconductor devices makes the viscosity for occurring being greatly lowered the composition epoxy resin for packaged semiconductor and increases considerably its intensity.In addition, being based on environmental factor, the composition epoxy resin for packaged semiconductor needs to have higher anti-flammability and is free of the fire retardant of such as bromine-containing compound and sb oxide.Due to these factors, recent composition epoxy resin is intended to comprising the lower resin of viscosity and a large amount of inorganic filler.

As new trend, the lead-free solder that fusing point is higher than conventional use of solder is just being increasing in the application of mounting semiconductor.When using the solder, installation temperature must be about 20 DEG C higher than the temperature used in traditional handicraft, compared with conventional device, is sometimes substantially reduced the reliability of the semiconductor devices by installation.In view of this situation, the reliability that semiconductor devices is improved by the performance for improving composition epoxy resin is had increasing need for.In order to meet this requirement, people are studied resin viscosity and addition high amount of inorganic filler is reduced.

The typical example of surface mount type semiconductor device includes the closer BGA of size (ball grid array device) and CSP (chip size packages), and QFN and SON encapsulation that such as mounting area is smaller than traditional QFP or SOP.Such as QFN and SON encapsulation has been developed to meet high the needs of drawing number and high speed.The limit of these demands close to the surface mount type semiconductor device by expressions such as conventional QFP, SOP.

BGA and CSP is only mounted with that the side of semiconductor chip is packaged by composition epoxy resin on hard wire plate or elastic printed wiring board, the representative example of hard wire plate is the wiring board being made of BT resin/copper foil (bismaleimide-triazine resin/fiberglass substrate), and the representative example of elastic printed wiring board is the wiring board being made of polyimide resin film/copper foil.Moreover, two dimension abreast forms soldered ball, and installs it in the circuit board by welding on the opposite that substrate is mounted with the side of semiconductor chip.

As described above, the structure of BGA or CSP is single-face packaging structure, wherein being only mounted with that the side of semiconductor chip is packaged (side for forming soldered ball on substrate is not packaged) with composition epoxy resin on substrate.Therefore, the semiconductor devices is easy to after forming (molding) immediately become bent (wraped), this be by between the composition epoxy resin after RF magnetron sputtering or metal substrate and solidification thermal expansion and thermal contraction it is inconsistent, or forming solidify (molding curing) period composition epoxy resin cure shrinkage caused by.Moreover, the warpage of semiconductor devices prevents the tie point of soldered ball from horizontal location.Therefore, during encapsulating these semiconductor devices, by the solder joint on wiring board, semiconductor devices can be tilted from wiring board, and lead to the decaying of the reliability of electrical connection.

On the contrary, having produced QFN or SON identical with the routine design of QFP or SOP.However, recently produce encapsulation by the following method: metal substrate (such as, the laminate of copper lead frame, with polyimide film stacking nickel-palladium+gold plate lead frame) one side on install semiconductor chip matrix (matrix), it is encapsulated in batch using the composition epoxy resin for encapsulation, then substrate is cut into the small lattice of required size, to individually be encapsulated (hereinafter referred to as MAP-QFN and MAP-SON) (for example, see patent document 1).

As BGA or CSP, MAP-QFN or MAP-SON are the structures of single side encapsulation, wherein being only mounted with that the side of semiconductor chip is packaged with composition epoxy resin on substrate.Here, the package area of MAP-QFN or MAP-SON is greatly than common product in package shape (commonpackage molding), and only its single side is packed.Therefore, such semiconductor devices is easy to immediately become after forming bent, this is because the thermal expansion and thermal contraction between the composition epoxy resin after metal substrate and solidification is inconsistent, or during forming solidifies caused by the cure shrinkage of composition epoxy resin.

The warpage of semiconductor devices tilts semiconductor devices from the wiring board that it is installed, and leads to the decaying of the reliability of electrical connection.

In order to reduce the warpage for the surface mount type semiconductor device being packaged substantially only in the one side of RF magnetron sputtering or metal substrate by composition epoxy resin, it is important that making the thermal expansion coefficient of substrate and the similar thermal expansion coefficient of cured composition epoxy resin, and reduce the cure shrinkage of the composition epoxy resin during forming solidifies.

In order to reach this purpose, it has been suggested that following technology: cooperating it with α 1 content that multi-functional epoxy resin and polyfunctional phenolic resin are combined to increase the Tg of composition epoxy resin, and adjust inorganic filler.However, the group credit union of multi-functional epoxy resin and polyfunctional phenolic resin reduces mobility, the problems such as so as to cause hole (unfilled voids) is such as not filled by.

When by it is such as infrared flow again, gas phase is welded and immersed solder welding procedure is welded when, moisture present in semiconductor devices is quickly evaporated at high temperature, which is as made of cured composition epoxy resin (formed products) moisture absorption.The pressure generated in the welding process will lead to be cracked in the semiconductor device, or is caused in the interface peel being mounted between the surface of semiconductor chip and cured epoxy resin in metal substrate.Therefore, it is necessary to the warpages that the content by increasing inorganic filler reduces semiconductor devices.The hygroscopicity by reducing formed products is needed to reduce pressure.In addition, it is necessary to improve the heat resistance of formed products and improve the caking property between curing materials and metal substrate.

It has developed in forming process, composition epoxy resin is made to keep the technology of high fluidity, which applies the surface mount type semiconductor device in for example traditional QFP and SOP.Such as, it has been disclosed that: using the resin (for example, with reference to patent document 2) of low melting viscosity, and using there is silane coupling agent, inorganic filler is surface-treated to improve the content of inorganic filler (for example, with reference to patent document 3).Any of these technologies are only able to satisfy the one of them in required multifrequency nature.

As described above, needing to add high concentration inorganic filler, to improve the characteristic of curing materials, the stress for such as reducing warpage, reducing formed products, which formed by the composition epoxy resin for packaged semiconductor.Also, in order to improve the filling characteristic of the composition epoxy resin for packaged semiconductor, it is necessary to improve its mobility.However, the mobility of the composition epoxy resin for packaged semiconductor will reduce when filling the inorganic filler of high concentration.Therefore, there are a trade-off relations between the mobility of the composition epoxy resin for packaged semiconductor and the curing materials characteristic of formed products.

The demand of all excellent composition epoxy resin for packaged semiconductor and the demand using semiconductor devices made of the composition are showed there are still the curing materials characteristic for mobility and formed products.

Patent document 1: Japanese Patent Laid-Open 2003-109983

Patent document 2: Japanese Patent Laid-Open 1995-130919

Patent document 3: Japanese Patent Laid-Open 1996-20673

Summary of the invention

It is an object of the present invention to solve problems of the prior art, it provides and shows composition epoxy resin excellent, for packaged semiconductor in a kind of characteristic of curing materials in mobility and formed products, and the semiconductor devices manufactured using the composition.

According to the present invention, following content is provided.

Dress

The composition epoxy resin of semiconductor chip comprising:

(A) crystalline epoxy resin,

(B) phenolic resin indicated by general formula (1):

Wherein, R1 and R2 stands alone as hydrogen or alkyl with 1 to 4 carbon atoms, and two or more R1 or two or more R2 may be the same or different；A is the integer of 0-4；B is the integer of 0-4；C is the integer of 0-3；N is average value, and is the numerical value of 0-10.

(C) (co) polymer or derivatives thereof containing structural unit derived from butadiene, and

(D) inorganic filler, the content in entire composition epoxy resin are 80wt%-95wt%, including two endpoint values.

(2), the composition epoxy resin for packaged semiconductor as described in (1), wherein the phenolic resin (B) is indicated by general formula (2):

Described (co) polymer or derivatives thereof (C) is epoxidised polybutadiene compound (C-1)；And

Content of the inorganic filler (D) in entire composition epoxy resin is 85wt%-95wt%, including two endpoint values.

(3), the composition epoxy resin for packaged semiconductor as described in (2), wherein the number-average molecular weight of the epoxidised polybutadiene compound (C-1) is 500-4000, it include two endpoint values.

(4), the composition epoxy resin for packaged semiconductor as described in (2) further comprises curing accelerator (E).

(5), semiconductor devices, wherein semiconductor chip is encapsulated using the composition epoxy resin for packaged semiconductor described in one of any in (2)-(4).

(6), for the surface installing type composition epoxy resin of packaged semiconductor, the composition is the composition epoxy resin for packaged semiconductor described in one of any in (2)-(4), it is used for package surface mounted semiconductor device

Wherein semiconductor chip is mounted on the one side of substrate, and is mounted with that the one side of semiconductor chip is packed substantially only in substrate.

(7), surface mount type semiconductor device, wherein semiconductor chip is as packaged by the surface installing type composition epoxy resin for packaged semiconductor as described in (6).

(8), the composition epoxy resin for packaged semiconductor as described in (1), wherein the phenolic resin (B) is indicated by general formula (2):

Wherein described (co) polymer or derivatives thereof (C) is hycar (C-2).

(9), the composition epoxy resin for packaged semiconductor as described in (8), wherein the hycar (C-2) is the hycar of carboxy blocking, is indicated by general formula (3):

Wherein, Bu indicates structural unit derived from butadiene；ACN indicates structural unit derived from acrylonitrile；X is less than 1 positive number；Y is less than 1 positive number；X+y=1；And z is the integer of 50-80.

(10), the composition epoxy resin for packaged semiconductor as described in (8), wherein content of the hycar (C-2) in entire composition epoxy resin is 0.05wt%-0.5wt%, including two endpoint values.

(11), the composition epoxy resin for packaged semiconductor as described in (8), wherein content of the inorganic filler (D) in entire composition epoxy resin is 85wt%-95wt%, including two endpoint values.

(12), the composition epoxy resin for packaged semiconductor as described in (8) further comprises curing accelerator (E).

(13), semiconductor devices, wherein semiconductor chip is as packaged by the composition epoxy resin for packaged semiconductor described in one of any in (8)-(12).

(14), for the surface installing type composition epoxy resin of packaged semiconductor, the composition is the composition epoxy resin for packaged semiconductor described in one of any in (8)-(12), it is used for package surface mounted semiconductor device

(15), surface mount type semiconductor device, wherein semiconductor chip is as encapsulating the surface installing type composition epoxy resin for packaged semiconductor as described in (14).

(16), the composition epoxy resin for packaged semiconductor as described in (1), wherein the crystalline epoxy resin (A) is indicated by general formula (4):

Wherein, X is selected from singly-bound ,-O- ,-S- and-C (R2)₂Group；R1 is the alkyl with 1 to 6 carbon atom；Two or more R1 may be the same or different；M is the integer of 0-4；R2 is hydrogen or alkyl with 1 to 4 carbon atoms；Two or more R2 may be the same or different,

The phenolic resin (B) is indicated by general formula (5):

Wherein, R1 and R2 stands alone as hydrogen or alkyl with 1 to 4 carbon atoms；Two or more R1 or two or more R2 may be the same or different；A is the integer of 0-3；B is the integer of 0-4；N is average value, and is the positive number of 1-5,

Described (co) polymer or derivatives thereof (C) is the polybutadiene (C-3) with intramolecular ethylene oxide structure, and the oxygen content in ethylene oxide is 3%-10%, including its both ends numerical value, and

Content of the inorganic filler (D) in entire composition epoxy resin is 85wt%-95wt%, including two endpoint values；And

Further comprise the epoxy resin (F) indicated by general formula (6):

Wherein, R1 and R2 stands alone as hydrogen or alkyl with 1 to 4 carbon atoms；Two or more R1 or two or more R2 may be the same or different；A is the integer of 0-3；B is the integer of 0-4；N is average value, and is the positive number of 1-5.

(17), the composition epoxy resin for packaged semiconductor as described in (16), wherein the polybutadiene (C-3) with intramolecular ethylene oxide structure is 20Pas-700Pas, including endpoints thereof in the viscosity that temperature is 25 DEG C.

(18), the composition epoxy resin for packaged semiconductor as described in (16) further comprises curing accelerator (E).

(19), semiconductor devices, wherein semiconductor chip is encapsulated as the composition epoxy resin for packaged semiconductor described in one of any in (16)-(18).

(20), for the surface installing type composition epoxy resin of packaged semiconductor, the composition is the composition epoxy resin for packaged semiconductor described in one of any in (16)-(18), it is used for package surface mounted semiconductor device

(21), surface mount type semiconductor device, wherein semiconductor chip is as encapsulating the surface installing type composition epoxy resin for packaged semiconductor as described in (20).

(22), the composition epoxy resin for packaged semiconductor as described in (1), wherein the crystalline epoxy resin (A) is indicated by general formula (4):

The phenolic resin (B) is indicated by general formula (5):

Described (co) polymer or derivatives thereof (C) is epoxidised polybutadiene compound (C-1), content of the inorganic filler (D) in entire composition epoxy resin is 80wt%-94wt%, including two endpoint values；And further comprise the epoxy resin (F) indicated by general formula (6):

Wherein, R1 and R2 stands alone as hydrogen or alkyl with 1 to 4 carbon atoms；Two or more R1 or two or more R2 may be the same or different；A is the integer of 0-3；B is the integer of 0-4；N is average value, and is the positive number of 1-5；And

Wherein the weight ratio [(F)/(A)] of the epoxy resin (F) and the crystalline epoxy resin (A) indicated by general formula (4) is 10/90 to 90/10, including two endpoint values.

(23), the composition epoxy resin for packaged semiconductor as described in (22), wherein the number-average molecular weight of the epoxidised polybutadiene compound (C-1) is 500-4000, including two endpoint values.

(24), the composition epoxy resin for packaged semiconductor as described in (22) further comprises curing accelerator (E).

(25), semiconductor devices, wherein semiconductor chip is encapsulated as the composition epoxy resin for packaged semiconductor described in one of any in (22)-(24).

(26), for the surface installing type composition epoxy resin of packaged semiconductor, the composition is the composition epoxy resin for packaged semiconductor described in one of any in (22)-(24), it is used for package surface mounted semiconductor device

Wherein semiconductor chip is mounted on the one side of substrate, and substantially only in be mounted with semiconductor chip one side it is packed.

(27), surface mount type semiconductor device, wherein semiconductor chip is as encapsulating the surface installing type composition epoxy resin for packaged semiconductor as described in (26).

(28), the composition epoxy resin for packaged semiconductor as described in (1), wherein the crystalline epoxy resin (A) is indicated by general formula (4):

The phenolic resin (B) is indicated by general formula (5):

Wherein, R1 and R2 independently hydrogen or alkyl with 1 to 4 carbon atoms；Two or more R1 or two or more R2 may be the same or different；A is the integer of 0-3；B is the integer of 0-4；N is average value, and is the positive number of 1-5,

Described (co) polymer or derivatives thereof (C) is hycar (C-2)；And

Further comprise the epoxy resin (F) indicated by general formula (6):

(29), the composition epoxy resin for packaged semiconductor as described in (28), wherein the hycar (C-2) is the hycar of carboxy blocking, is indicated by general formula (3):

Wherein, Bu indicates structural unit derived from butadiene；ACN indicates structural unit derived from acrylonitrile；X is less than 1 positive number；Y is less than 1 positive number；X+y=1；Z is the integer of 50-80.

(30), the composition epoxy resin for packaged semiconductor as described in (28), wherein content of the hycar (C-2) in entire composition epoxy resin is 0.05wt%-0.5wt%, including two endpoint values.

(31), the composition epoxy resin for packaged semiconductor as described in (28), wherein the weight ratio [(F)/(A)] of the epoxy resin (F) and the crystalline epoxy resin (A) indicated by general formula (4) is 10/90 to 90/10, including two endpoint values.

(32), the composition epoxy resin for packaged semiconductor as described in (28) further comprises curing accelerator (E).

(33), semiconductor devices, wherein semiconductor chip is encapsulated as the composition epoxy resin for packaged semiconductor described in one of any in (28)-(32).

(34), for the surface installing type composition epoxy resin of packaged semiconductor, the composition is the composition epoxy resin for packaged semiconductor described in one of any in (28)-(32), it is used for package surface mounted semiconductor device

(35), surface mount type semiconductor device, wherein semiconductor chip is as encapsulating the surface installing type composition epoxy resin for packaged semiconductor as described in (34).

Compared with prior art, the epoxy resin composition for packaged semiconductor of the invention can be improved the filling rate of inorganic filler and improve the mobility of composition.Therefore composition epoxy resin for packaged semiconductor of the invention can express good curing materials characteristic, as the warpage in formed products is reduced, stress reduces, good fillibility.Therefore, it is particularly suitable as the surface installing type composition epoxy resin for packaged semiconductor and semiconductor devices.

Preferred forms of the invention

Composition epoxy resin for packaged semiconductor of the invention includes following components (A)-(D):

(A) crystalline epoxy resin,

(B) phenolic resin indicated by general formula (1):

Wherein, R1 and R2 stands alone as hydrogen or alkyl with 1 to 4 carbon atoms, and two or more R1 or two or more R2 may be the same or different；A is the integer of 0-4；B is the integer of 0-4；C is the integer of 0-3；N is average value, and is the numerical value of 0-10,

(D) inorganic filler.

Content of the inorganic filler (D) in entire composition epoxy resin is 80wt%-95wt%, including two endpoint values.

The composition epoxy resin for packaged semiconductor with this composition can be such that coefficient of thermal expansion reduces by the inorganic filler (D) of high-content, and by addition there is the (co) polymer of structural unit derived from butadiene or derivatives thereof (C) to make elastic reduction.Therefore, improved mobility is shown for the composition epoxy resin of packaged semiconductor, the reduction of warpage and soldering resistance, these performances are all required for surface mount type semiconductor device in curing materials.Therefore, available more reliable semiconductor devices.

It will elaborate below to the composition epoxy resin for being used for packaged semiconductor of the invention.

Crystalline epoxy resin (A)

Example for crystalline epoxy resin (A) of the invention includes glycidol ether, bisphenol-Ftype epoxy resin, the biphenyl type epoxy resin indicated by general formula (7), the stilbene type epoxy resin indicated by general formula (8) and the epoxy resin indicated by general formula (4) of quinhydrones.

Wherein, R3-R10 is hydrogen or the alkyl at most 4 carbon atoms, and be may be the same or different.

Wherein, R11-R20 is hydrogen or the alkyl at most 4 carbon atoms, and be may be the same or different.

Wherein, X is selected from singly-bound ,-O- ,-S- and-C (R2)₂Group；R1 is the alkyl with 1 to 6 carbon atom；Two or more R1 may be the same or different；M is the integer of 0-4；R2 is hydrogen or alkyl with 1 to 4 carbon atoms, and two or more R2 may be the same or different.

Phenolic resin (B)

It is indicated for phenolic resin (B) of the invention by general formula (1):

(co) polymer with structural unit derived from butadiene or derivatives thereof (C)

It is (co) polymer as prepared by the butadiene as monomer or derivatives thereof (C) for the (co) polymer with structural unit derived from butadiene of the invention or derivatives thereof (C) (being only referred to as " (co) polymer or derivatives thereof (C) " sometimes below).

(co) polymer or derivatives thereof (C) can be epoxidised polybutadiene compound (C-1), hycar (C-2) or the polybutadiene (C-3) with ethylene oxide structure.These compounds will be described following.

Inorganic filler (D)

It those of can be selected from the composition epoxy resin commonly used in packaged semiconductor inorganic filler for inorganic filler (D) of the invention.

These inorganic fillers may include vitreous silica, crystalline silica, secondary assembly quartz, alumina, titanium white, aluminium hydroxide, talcum powder, clay and glass fibre, these inorganic fillers can be used alone can also two or more be used in combination.Vitreous silica is especially preferred.The form of vitreous silica can be the particle or sphere ground.It is further preferred that spherical quartz can be used for improving its content, and minimize the increase of the melt viscosity of composition epoxy resin.In order to improve the content of spherical quartz, it is generally desirable to which the particle diameter distribution for adjusting spherical quartz keeps its distribution wider.

If desired, can be surface-treated with coupling agent, epoxy resin or phenolic resin to inorganic filler.Surface treatment can use suitable technique, obtain mixture in inorganic filler as removed solvent again after being mixed in a solvent, directly adding an additive to, then handled with blender the mixture.

Composition epoxy resin for packaged semiconductor of the invention is in addition to comprising said components (A)-(D), also comprising curing accelerator (E), epoxy resin (F) and silane coupling agent (G).

Curing accelerator (E)

Any special limitation do not made to curing accelerator (E), optional self energy promotes the curing accelerator that those of reacts of epoxy group and phenolic hydroxy group comprising Diazabicycloalkene and its derivative, such as 1,8- diazabicyclo (5,4,0) hendecene -7；Organic phosphine and its derivative, such as triphenylphosphine and methyldiphenyl base phosphine；With-four substituted boracic acid salt of four Qu Dai Phosphonium, such as tetraphenyl boron tetraphenylphosphoniphenolate, four benzoic acid boron tetraphenylphosphoniphenolates-(tetraphenylphosphonium.tetrabenzoic acid borate), four naphthoic acid boron tetraphenylphosphoniphenolates (tetraphenylphosphonium.tetranaphthoic acid borate), four naphthoyl oxygen boron tetraphenylphosphoniphenolate/(tetraphenylphosphonium.tetranaphthoyloxy borate) and four naphthalene oxygen boron tetraphenylphosphoniphenolate (tetraphenylphosphonium.tetranaphthyloxy bora Te).These curing accelerators can be used alone or two or more are used in combination.

Epoxy resin (F)

Epoxy resin (F) can be the epoxy resin indicated by general formula (6):

Silane coupling agent (G)

Silane coupling agent (G) can be the compound indicated by general formula (9):

R3-NH-R4-Si(OR5)_nR6_3-n (9)

Wherein, R3 is the organic group with 1 to 12 carbon atom；R4, R5 and R6 are the hydrocarbon with 1 to 12 carbon atom；R3 to R6 is identical or different；N is the integer of 1-3.

Other components

When needing, in addition to said components (A) to (G), composition epoxy resin of the invention can also suitably include various additives, and the additive includes:

Native paraffin, such as Brazil wax；

Synthetic wax, such as polyethylene wax；

Higher fatty acids or its metal salt, such as stearic acid and zinc stearate；

Release agent, such as paraffin；

Colorant, such as carbon black and red ocher；

Fire retardant, such as brominated epoxy resin, antimony trioxide, aluminium hydroxide, magnesium hydroxide, zinc borate, zinc molybdenum oxide, phosphine nitrile and phosphorus compound；

Inorganic ion exchanger, such as bismuth oxide hydrate；With

Low stress component, such as silicone oil and rubber；And

Antioxidant.

Composition epoxy resin of the invention can be by following prepared: at room temperature being mixed component (A)-(G) and other additives using such as blender, the mixture is mediated using kneading tool such as roller mill, kneader and extruder etc. when heating, then cooling, mixture of milling.

When using composition epoxy resin packaged electronic components such as semiconductor chip manufacturing semiconductor devices of the invention, solidified forming can be carried out by conventional forming technology such as transfer modling, pressing mold and injection molding.Other methods for being related to manufacturing semiconductor devices can be selected from known method.Especially, composition epoxy resin of the invention is most suitable for for surface mount type semiconductor device.

It will illustrate the preferred embodiment of the present invention following.

Embodiment 1:

The composition epoxy resin for packaged semiconductor of embodiment 1 includes following components (A)-(E):

(A) crystalline epoxy resin,

(B) phenolic resin indicated by general formula (2),

(C-1) epoxidized polybutadiene compound,

(D) inorganic filler, the content in entire composition epoxy resin are 85wt%-95wt%, including two endpoint values.

(E) curing accelerator.

Content of the epoxidized polybutadiene compound (C-1) in entire composition epoxy resin is 0.05wt%-5wt%, including two endpoint values.

This composition epoxy resin for packaged semiconductor can be such that coefficient of thermal expansion reduces by the inorganic filler (D) of high-content, and can make elastic reduction by adding epoxidised polybutadiene compound (C-1).Therefore,

The mobility of composition epoxy resin for packaged semiconductor is high, and therefore has improved filling capacity.In addition, the composition epoxy resin for being used for packaged semiconductor can provide the formed products that curing materials are had excellent performance, the performance includes the warpage properties being reduced and has soldering resistance etc..Therefore the composition can significantly be effectively made the semiconductor devices of high reliability.As described above, the composition epoxy resin for packaged semiconductor of present embodiment is applicable to surface mount type semiconductor device.

Embodiment 1 is illustrated.

Crystalline epoxy resin (A)

The example of crystalline epoxy resin (A) for embodiment 1 includes glycidol ether, bisphenol-Ftype epoxy resin, the biphenyl type epoxy resin indicated by general formula (7) and the stilbene type epoxy resin indicated by general formula (8) of quinhydrones.

Wherein, R11-R20 be hydrogen or be at most 4 carbon atoms alkyl, may be the same or different.

These epoxy resin are solid at room temperature, therefore have good operability, and have low melting viscosity during forming.Low melting viscosity can improve the mobility of the epoxy resin for packaged semiconductor, and allow to can be used for filling the inorganic filler of high concentration.Therefore, moisture resistance can be improved, and reduces the difference of linear expansion coefficient, to improve the performance of formed products.

The preferred embodiment of the biphenyl type epoxy resin indicated by general formula (7) includes 4,4 '-diglycidyl biphenyl, 3,3 ', 5,5 '-tetramethyls -4, the molten mixture of 4 '-diglycidyl biphenyl and these compounds, they can obtain good balance in terms of operability and practicability.

The preferred embodiment of the stilbene type epoxy resin indicated by general formula (8) includes 5- tert-butyl -4,4 '-diglycidyls -2,3 ', 5 '-trimethyl stilbenes, 4,4 '-diglycidyl -3,3 ', 5, the molten mixture of 5 '-tetramethyl stilbenes and these compounds, they can obtain good balance in terms of operability and practicability.

These crystalline epoxy resins (A) can be used in combination with other epoxy resin.

When it is when being used in combination, the content of crystalline epoxy resin (A) is preferably at least 10wt% of epoxy resin total amount, more preferably 30wt% or more, further preferably 50wt% or more.The crystalline epoxy resin (A) in above-mentioned content range can be added, to be modified to the mobility of the epoxy resin of packaged semiconductor.

The example for the epoxy resin that can be used in combination includes but is not limited to novolac epoxy resin, cresol-novolak type epoxy resin, tris-phenol type epoxy resin, phenol aralkyl type epoxy resin, naphthol type epoxy resin, naphthalene-type epoxy resin, alkyl-modified tris-phenol type epoxy resin, the epoxy resin containing triazine parent nucleus and dicyclopentadiene-modified phenol aldehyde type epoxy resin.It is desirable that the epoxy resin being used in combination has alap viscosity to avoid the benefit performance for making epoxy resin crystal, that is, the relatively low melting viscosity during forming is degraded.

Phenolic resin (B)

Phenolic resin used in present embodiment (B) can be the phenolic resin indicated by general formula (2).

Biphenylene part of the phenolic resin indicated by general formula (2) between phenolic hydroxyl group with hydrophobicity and rigidity.Therefore, the phenolic resin (B) with biphenylene part can be used for the warpage for reducing the cured article (formed products) of the epoxy resin for packaged semiconductor.In addition, reducing the hydroscopicity of the formed products, the elasticity modulus in the high temperature range higher than Tg is reduced, and good caking property is shown to semiconductor chip, RF magnetron sputtering and metal substrate.In addition, phenolic resin also has high flame retardant, the feature of high-fire resistance even if its crosslink density is low.

In view of curing performance, the phenolic resin indicated by general formula (2) is preferably the phenolic resin indicated by general formula (10).

Wherein, n is average value, and is the numerical value of 0-10.

In general formula (2) and (10), when n within the above range, the mobility of resin combination can be improved in the curing process, so that increasing the content of inorganic filler, this helps to reduce hygroscopicity, and reduce warpage.

The phenolic resin indicated by general formula (2) for embodiment 1 can be used in combination with other phenolic resin.When used in association, the content of the phenolic resin (B) indicated by general formula (2) is preferably at least 10wt%, more preferably 30wt% or more, further preferably 50wt% or more of phenolic resin total amount.The phenolic resin (B) in above-mentioned content range can be added, so that the composition epoxy resin made shows low elasticity, agent of low hygroscopicity and good caking property and anti-flammability at high temperature.

The example for the phenolic resin that can be used in combination includes but is not limited to modified phenolic resin, dicyclopentadiene-modified phenolic resin and the phenol aralkyl resin with phenylen moiety of linear phenol-aldehyde resin (phenolnovolac resins), cresol-novolak type resin (cresol novolac resins), naphthols aralkyl resin, tris-phenol resin, terpene.These phenolic resin can be used alone or two or more are used in combination.In order to improve the content of inorganic filler, as epoxy resin, preferably there is low viscosity.

The equivalent proportion of the phenolic hydroxyl group number in epoxy group number and entire phenolic resin in entire epoxy resin used in embodiment 1 is preferably 0.5-2, including two endpoint values；Especially preferably 0.7-1.5, including two endpoint values.When equivalent proportion is in above range, the composition epoxy resin for packaged semiconductor can be obtained, the composition can provide the formed products for showing good moisture resistance and curing characteristics.

Epoxidized polybutadiene compound (C-1)

Epoxidized polybutadiene compound (C-1) used in embodiment 1 can be the compound indicated by general formula (11), but not limited to this.

Wherein, k, l, m and n are 1 to 50 integers；R21 has C_pH_qThe structure of expression；P is integer of 0 to 10；Q is 1 to 21 integer.

In entire composition epoxy resin, the content of epoxidized polybutadiene compound (C-1) is preferably 0.05wt%-5wt%, including two endpoint values；Particularly preferably 0.1wt%-2wt%, including two endpoint values.Content in above range can lead to the reduction of the elasticity modulus of composition epoxy resin, and further decrease its viscosity.

In addition, the number-average molecular weight of the epoxidised polybutadiene compound (C-1) for present embodiment is preferably 500 to 4000, including two endpoint values.Number-average molecular weight in above range can lead to the reduction of the elasticity modulus of composition epoxy resin, and obtain expected viscosity.

Inorganic filler (D)

Inorganic filler (D) for embodiment 1 can be above-mentioned inorganic filler.In entire composition epoxy resin, the content of the inorganic filler for present embodiment is 85wt%-95wt%, including two endpoint values；Preferably 87wt%-93wt%, including two endpoint values.When the content of inorganic filler (D) within the above range when, the hygroscopicity and thermal expansivity of prepared formed products will be reduced fully, so that semiconductor devices has good soldering resistance, and reduce warpage.Also, the mobility of composition epoxy resin for packaged semiconductor can be improved, it can reliably be filled in forming process as a result, thus can be to avoid the deformation of such as gold thread the problems such as.

Curing accelerator (E)

Curing accelerator (E) for embodiment 1 can be above compound.

Other components

Composition epoxy resin in present embodiment may also include in addition to said components (A), (B), (C-1), (D) and (E), other components.Furthermore, if necessary, composition can suitably include various arbitrary additives, and the additive includes such as epoxy silane, hydrosulphonyl silane, amino silane, ureido silane and vinyl silanes silane coupling agent, and such as titanate coupling agent, aluminum coupling agent and aluminium/zirconium coupling agent coupling agent.

Composition epoxy resin in present embodiment 1 can be by following prepared: at room temperature being mixed component (A) to (E) and other additives using such as blender, then the mixture is mediated using kneading tool such as roller mill, kneader and extruder etc. when heating, then cooling, mixture of milling.

When for example semiconductor chip carrys out manufacturing semiconductor devices using composition epoxy resin packaged electronic components of the invention, solidified forming can be carried out by conventional forming technology such as transfer modling, pressing mold and injection molding.Other methods for being related to manufacturing semiconductor devices can be selected from known method.Especially, composition epoxy resin of the invention is to be best suited for surface mount type semiconductor device.

Embodiment 2

Composition epoxy resin in embodiment 2 for packaged semiconductor includes following components (A)-(C-2):

(A) crystalline epoxy resin,

(B) phenolic resin indicated by general formula (2),

(C-2) hycar.

Wherein, independently hydrogen or alkyl with 1 to 4 carbon atoms, two or more R1 or two or more R2 may be the same or different R1 and R2；A is the integer of 0-4；B is the integer of 0-4；C is the integer of 0-3；N is average value, and is the numerical value of 0-10.

This composition epoxy resin can meet the condition of high-content inorganic filler and high fluidity simultaneously.In addition, the composition epoxy resin for being used for packaged semiconductor can provide the formed products that curing materials are had excellent performance, the excellent properties include the warpage properties being reduced and have soldering resistance etc..Therefore, the composition can significantly be effectively made the semiconductor devices of high reliability.As described above, the composition epoxy resin for packaged semiconductor of present embodiment is applicable to surface mount type semiconductor device.

Embodiment 2 will be illustrated.

Crystalline epoxy resin (A)

Crystalline epoxy resin used in embodiment 2 (A) can be as illustrated in embodiment 1.

Crystalline epoxy resin (A) in present embodiment can be used in combination with other epoxy resin described in embodiment 1.When used in association, the content of crystalline epoxy resin (A) is preferably at least 10wt% of epoxy resin total amount, more preferably 30wt% or more, further preferably 50wt% or more.The crystalline epoxy resin (A) in above range can be added, so as to improve the mobility of composition epoxy resin.

Phenolic resin (B)

Phenolic resin used in embodiment 2 (B) can be the compound of the general formula as described in embodiment 1 (2) expression.

Phenolic resin (B) in embodiment 2 can be used in combination with other phenolic resin described in embodiment 1.When used in association, the content of phenolic resin (B) is preferably at least 10wt% of phenolic resin total amount, more preferably 30wt% or more, further preferably 50wt% or more.Phenolic resin (B) in above range may be added to that in the composition epoxy resin for packaged semiconductor, low elasticity, agent of low hygroscopicity be shown at high temperature to provide, also with the formation product of good caking property and anti-flammability.

The equivalent proportion of the phenolic hydroxyl group number in epoxy group number and entire phenolic resin in entire epoxy resin used in present embodiment is preferably 0.5-2, including two endpoint values；Especially preferably 0.7-1.5, including two endpoint values.When equivalent proportion is in above range, the composition epoxy resin for packaged semiconductor can be obtained, the composition can provide the formed products for showing good moisture resistance and curing characteristics.

Hycar (C-2)

Hycar used in embodiment 2 (C-2) can be the compound indicated by general formula (3), but not limited to this, there are a carboxyl in two ends of these compounds.

Carboxyl in hycar (C-2) can by as the inorganic filler of the raw material for the composition epoxy resin for being used to encapsulate and epoxy resin, with as semiconductor apparatus assembly semiconductor chip and RF magnetron sputtering combine.

In entire composition epoxy resin, the content of hycar used in present embodiment (C-2) is preferably 0.05wt%-5wt%, including two endpoint values；More preferably 0.1wt%-0.3wt%, including two endpoint values.

Content in above range can improve soldering resistance, because it can be used has good caking property between the cured article and substrate of the composition epoxy resin of packaged semiconductor.Moreover, the mobility of composition epoxy resin can become sufficiently, to fill the composition reliably in forming process, so that the gold thread in semiconductor devices be avoided to deform.

The composition epoxy resin for packaged semiconductor in the present embodiment further includes inorganic filler (D) and/or curing accelerator (E) in addition to above-mentioned component (A)-(C-2).

Inorganic filler (D)

Inorganic filler (D) in embodiment 2 can be the filler illustrated in embodiment 1.Content for the inorganic filler in present embodiment is the 85wt%-95wt% of composition epoxy resin total amount, including two endpoint values；Preferably 87wt%-93wt%, including two endpoint values.When inorganic filler (D) content within the above range, the hygroscopicity and thermal expansivity of prepared formed products will fully reduce, so that semiconductor devices has good soldering resistance, and reduce warpage.In addition, the mobility of composition epoxy resin for packaged semiconductor can also be improved, it can reliably be filled in forming process as a result, thus can be to avoid the deformation of such as gold thread the problems such as.

Curing accelerator (E)

Curing accelerator used in embodiment 2 (E) can be compound described in embodiment 1.

Other components

Composition epoxy resin in embodiment 2 can be selected from composition epoxy resin described in embodiment 1 or other.

Composition epoxy resin in embodiment 2 can be prepared as described in embodiment 1.Moreover, the composition epoxy resin can be used for encapsulating electronic component such as semiconductor chip, and with preparation, the semiconductor devices as described in embodiment 1.

Embodiment 3

Composition epoxy resin in embodiment 3 for packaged semiconductor includes following components (A)-(G):

(A) crystalline epoxy resin that general formula 4 indicates,

(B) phenolic resin that general formula (5) indicates,

(C-3) there is the polybutadiene (C-3) of intramolecular ethylene oxide structure,

(D) curing accelerator,

(E) inorganic filler, content in entire composition epoxy resin are 85wt%-95wt%, including two endpoint values,

(F) epoxy resin that general formula (6) indicates, and

(G) silane coupling agent that general formula (9) indicates.

The oxygen content of ethylene oxide in polybutadiene (C-3) is 3%-10%, including two endpoint values.

Wherein, X is selected from singly-bound ,-O- ,-S- and-C (R2)₂Group；R1 is the alkyl with 1 to 6 carbon atom；Two or more R1 may be the same or different；M is the integer of 0-4；R2 is hydrogen or alkyl with 1 to 4 carbon atoms；Two or more R2 may be the same or different.

R3-NH-R4-Si(OR5)_nR6_3-n (9)

This composition epoxy resin can meet the condition of high-content inorganic filler and high fluidity simultaneously.In addition, the composition epoxy resin for being used for packaged semiconductor can provide the formed products that curing materials are had excellent performance, the excellent performance is, for example, the warpage properties being reduced and has soldering resistance etc..Therefore, the composition can significantly be effectively made the semiconductor devices of high reliability.As described above, the composition epoxy resin for packaged semiconductor in present embodiment is applicable to surface mount type semiconductor device.

Embodiment 3 will will be illustrated.

Crystalline epoxy resin (A)

Crystalline epoxy resin used in embodiment 3 (A) can be the crystalline epoxy resin indicated by general formula (4).By general formula (4) indicate crystalline epoxy resin (A) be solid at room temperature, more than its fusing point at a temperature of then become the extremely low liquid of viscosity, thus can add the inorganic filler of higher concentration.Therefore resin containing this composition epoxy resin shows excellent soldering resistance.

The crystalline epoxy resin (A) indicated by general formula (4), such as can be bisphenol A type epoxy resin, but be not particularly limited to it, as long as it has the structure of general formula (4).

If be used in combination, the content for the other epoxy resin being used in combination is preferably the 70wt%-100wt% for making the amount of epoxy resin (F) and crystalline epoxy resin (A) reach epoxy resin total amount, including two endpoint values.When the total content of epoxy resin (F) and crystalline epoxy resin (A) within the above range when, cured article can have a low hydroscopicity, and have excellent crack resistance.

The epoxy resin that can be used in combination can be monomer, oligomer or polymer with intramolecular epoxy group.The example for the epoxy resin that can be used in combination includes novolac epoxy resin, o-cresol formaldehyde type epoxy resin, naphthol novolak type epoxy resin, phenol aralkyl type epoxy resin with phenylen moiety, naphthols aralkyl-type epoxy resin (has such as phenylene or biphenyl moieties), dicyclopentadiene-modified phenol type epoxy resin, stilbene type epoxy resin, tris-phenol type epoxy resin, alkyl-modified tris-phenol type epoxy resin and the epoxy resin containing triazine parent nucleus.These epoxy resin that can be used in combination can be used alone or two or more are used in combination.

Phenolic resin (B)

Phenolic resin used in embodiment 3 (B) can be the phenolic resin indicated by general formula (5).

The phenolic resin indicated by general formula (5) has hydrophobic and rigid biphenylene part between phenolic hydroxyl group.The hydroscopicity being reduced and elasticity modulus are shown in the high temperature range higher than Tg by the cured article of the composition epoxy resin preparation containing phenolic resin.And good caking property is shown to semiconductor chip, RF magnetron sputtering and metal substrate.Even if its crosslink density is low, still there is high flame retardant.Therefore, there is excellent crack resistance with the semiconductor devices that the resin combination containing phenolic resin encapsulates.

In general formula (5), n is average value, is the positive number of 1-5, the preferably integer of 1-3.When the value of n within the above range when, composition epoxy resin shows good curing characteristics and improved mobility.It can be used alone by the phenolic resin that general formula (5) indicate, or be used in combination with two or more.

Can be with by the phenolic resin that general formula (5) indicate, e.g. phenol xenyl aralkyl resin, but be not particularly limited, as long as it has the structure of general formula (5).

In the present embodiment, other phenolic resin can be used in combination, as long as the phenolic resin will not make to be deteriorated using the characteristic that the phenolic resin that general formula (5) indicate obtains.The content for the additional phenolic resin being used in combination is preferably the 70wt%-100wt% for making the content phenolic resin total amount of phenolic resin (B), including two endpoint values.When the content of phenolic resin (B) within the above range when, cured article hydroscopicity reduce.Moreover, cured article shows between substrate good caking property and the soldering resistance after welding.

Additional phenolic resin can be monomer, oligomer or polymer with intramolecular phenolic hydroxyl group, preferably have alap viscosity.Example includes the modified phenolic resin and dicyclopentadiene-modified phenolic resin of linear phenol-aldehyde resin, cresol-novolak type resin, phenol aralkyl resin (with phenylen moiety), naphthols aralkyl resin, tris-phenol resin, terpene.These resins can be used alone or two or more are used in combination.In view of the reliability for needing moisture resistance as the composition epoxy resin for packaged semiconductor, preferred resin includes the ionic impurity of sodium ion or chloride ion that should be as few as possible.

The equivalent proportion of epoxy group number in entire epoxy resin and the phenolic hydroxyl group number in phenolic resin, i.e. epoxy group number/phenolic hydroxyl group number, preferably 0.7-1.5, including two endpoint values.When equivalent proportion is in above range, the epoxy resin for packaged semiconductor shows good curing characteristics.Moreover, the glass transition temperature of cured article increases, and the reliability of moisture resistance also improves.When epoxy resin (F) and crystalline epoxy resin (A) and phenolic resin (B) are used in combination, optimal effect can get in terms of the weldability after crack resistance and warpage and moisture absorption.

Polybutadiene (C-3) with intramolecular ethylene oxide structure

The polybutadiene (C-3) that present embodiment uses has intramolecular ethylene oxide structure.The influence of oxygen content caking property of ethylene oxide.It is learnt according to the measurement that the standard method for analyzing grease, oil and related substances (oxygen of ethylene oxide) carries out, the oxygen content of ethylene oxide is 3%-10%, including two endpoint values；Preferably 5%-8%, including two endpoint values.When the oxygen content of ethylene oxide within the above range when, the caking property between cured article and substrate is improved.Moreover, the mobility of composition epoxy resin can be improved, to reliably be filled.

Viscosity of the viscosity influence of polybutadiene (C-3) with intramolecular ethylene oxide structure for the resin combination of packaged semiconductor.It is 20Pas to 700Pas, including two endpoint values in 25 DEG C of the at a temperature of viscosity that measures for the composition epoxy resin containing polybutadiene (C-3) of packaged semiconductor according to JIS z-8803；More preferably 50Pas to 500Pas, including two endpoint values.When viscosity within the above range when, the composition epoxy resin for packaged semiconductor shows improved mobility.Moreover, cured article shows the good caking property between substrate, and the warpage of semiconductor devices is also reduced at least.

Polybutadiene (C-3) with intramolecular ethylene oxide structure can be the compound indicated by general formula (11).In the present embodiment, polybutadiene (C-3) is necessary.

Polybutadiene (C-3) can improve the caking property between composition epoxy resin and metal substrate (such as nickel-palladium or nickel-palladium-gold coating), flow heating power so as to cause Gao Naizai.

As long as the effect using polybutadiene (C-3) is without damage, other stress depressants can be used in combination.The example for the stress depressant that can be used in combination includes the silicone oil of such as organopolysiloxane and the rubber of such as silicone rubber and acrylic-nitrile rubber, and rubber is solid at room temperature.

Its content is 0.05wt%-1.5wt%, including two endpoint values；Preferably 0.1wt%-1wt%, including two endpoint values.When content is in above range, cured article shows the good caking property between substrate.Moreover, the mobility of composition epoxy resin can also be improved, to obtain more reliable filling.

Inorganic filler (D)

The inorganic filler (D) that embodiment 3 uses can be the filler as described in embodiment 1.In entire composition epoxy resin, the content of inorganic filler (D) is 85wt%-95wt%, including two endpoint values；Preferably 87wt%-93wt%, including two endpoint values.When the content of inorganic filler (D) within the above range when, the hygroscopicity and thermal expansivity of obtained formed products can be substantially reduced, so that semiconductor devices has good soldering resistance, and reduce warpage.Also, the mobility of composition epoxy resin for packaged semiconductor can be improved, and be reliably filled wherein it can in forming process, thus can be to avoid the deformation of such as gold thread the problems such as.

Curing accelerator (E)

The curing accelerator (E) that embodiment 3 uses can be compound as tdescribed in embodiment 1.

Epoxy resin (F)

Epoxy resin (F) can be the epoxy resin indicated by general formula (6).

As shown in general formula (6), epoxy resin (F) has hydrophobic and rigid biphenylene part between epoxy group.Therefore, the hydroscopicity for the cured article being prepared by the composition epoxy resin containing epoxy resin (F) reduces, and the elasticity modulus in the high temperature range higher than glass transition temperature (hereinafter referred to as Tg) also reduces.In addition, also showing the good adhesion with semiconductor chip, RF magnetron sputtering and metal substrate.Moreover, epoxy resin (F) still shows higher heat resistance even if its crosslink density is low.

Epoxy resin (F) can be, such as phenol xenyl aralkyl-type epoxy resin, but and be not particularly limited, as long as its structure with general formula (6).

In general formula (6), when n within the above range when, composition epoxy resin shows improved curing characteristics and mobility.

Silane coupling agent (G)

Silane coupling agent used in embodiment 3 (G) can be the compound indicated by general formula (9).In this embodiment, silane coupling agent (G) is basic.

R3-NH-R4-Si(OR5)_nR6_3-n (9)

Using the silane coupling agent (G) indicated by general formula (9), the viscosity of composition epoxy resin can be reduced, and therefore improved its mobility.In entire composition epoxy resin, the content of silane coupling agent (G) is 0.05wt%-1wt%, including two endpoint values；Preferably 0.1wt%-0.8wt%, including two endpoint values；But it is not limited only to above range.When the content of silane coupling agent (G) is between above range, cured article shows the good caking property between substrate.In addition, composition epoxy resin is excellent in terms of mobility and curing characteristics.It can be used alone by the silane coupling agent (G) that general formula (9) indicate or two or more be used in combination.

As long as the effect that not will lead to the used silane coupling agent (G) indicated by general formula (9) is deteriorated, other coupling agents can also be used in combination.The example for the coupling agent that can be used in combination includes such as coupling agents such as epoxy silane, hydrosulphonyl silane, amino silane, ureido silane and vinyl silanes silane coupling agent and titanate coupling agent, aluminum coupling agent and aluminium/zirconium coupling agent.

Other components

The composition epoxy resin of embodiment 3 may also include above-mentioned other components in addition to component (A)-(G).

The composition epoxy resin of embodiment 3 can be prepared as described in embodiment 1.Also, composition epoxy resin can be used for packaged electronic components such as semiconductor chip to prepare semiconductor devices, as described in embodiment 1.

Embodiment 4:

The composition epoxy resin for packaged semiconductor in embodiment 4 includes following components (A)-(F):

(A) crystalline epoxy resin indicated by general formula (4),

(B) phenolic resin indicated by general formula (5),

(C-1) epoxidized polybutadiene compound,

(D) inorganic filler,

(E) curing accelerator, and

(F) epoxy resin indicated by general formula (6).

Component (F) and the weight ratio [(F)/(A)] of component (A) are 10/90 to 90/10, including two endpoint values.Content of the component (D) in entire composition epoxy resin is 80wt% to 94wt%, including two endpoint values.And content of the epoxidized polybutadiene compound (C-1) in entire composition epoxy resin is 0.05wt%-5wt%, including two endpoint values.

This composition epoxy resin can reduce the warpage of semiconductor devices, and make it have excellent anti-weldering fragility.Therefore, the composition epoxy resin is especially suitable for package surface mounted semiconductor device.

Embodiment 4 will be illustrated.

Crystalline epoxy resin (A)

Crystalline epoxy resin used in embodiment 4 (A) can be the epoxy resin crystal as described in embodiment 3.

In embodiment 4, the weight ratio [(F)/(A)] of epoxy resin (F) and crystalline epoxy resin (A) are 10/90 to 90/10, including two endpoint values；Preferably 20/80 to 70/30, including two endpoint values；Particularly preferably 30/70 to 50/50, including two endpoint values.When weight ratio [(F)/(A)] within the above range when, by composition epoxy resin preparation cured article have low hydroscopicity.And the inorganic filler of high-content can be contained in composition epoxy resin.Therefore, cured article can have low hydroscopicity and high intensity.

In embodiment 4, as long as the characteristic that will not make the use due to epoxy resin (F) and crystalline epoxy resin (A) and obtain is deteriorated, the additional epoxy resin as described in embodiment 3 can be added.If being added to additional epoxy resin, the content of additional epoxy resin is preferably the 70wt% to 100wt% for making the content epoxy resin total amount of epoxy resin (F) and crystalline epoxy resin (A), including two endpoint values.When the total amount of epoxy resin (F) and crystalline epoxy resin (A) is between above range, cured article shows the hydroscopicity being reduced and the crack resistance further improved.

Phenolic resin (B)

Phenolic resin used in embodiment 4 (B) can be the phenolic resin indicated as described in embodiment 3 by general formula (5).

As long as will not make that the characteristic obtained by the epoxy resin (B) of general formula (5) expression is used to be deteriorated in the present embodiment, above-mentioned additional phenolic resin can be used in combination.The phenolic resin indicated by general formula (2) for embodiment 1 can be used in combination with other phenolic resin.If being added to other phenolic resin, the content of other phenolic resin is preferably the 70wt% to 100wt% for making the content phenolic resin total amount of phenolic resin (B), including two endpoint values.When the content of phenolic resin (B) within the above range when, cured article has the hydroscopicity that reduces, and shows the good adhesion with sill, and the soldering resistance after welding.

The equivalent proportion of epoxy group number in entire epoxy resin and the phenolic hydroxyl group number in entire phenolic resin, i.e. epoxy group number/phenolic hydroxyl group number, preferably 0.7-1.5, including two endpoint values.When equivalent proportion within the above range when, resin Composition shows excellent curing characteristics.Moreover, the glass transition temperature of cured article is improved, the reliability in terms of moisture resistance is also improved.When the epoxy resin (F) indicated by general formula (6) and the crystalline epoxy resin (A) indicated by general formula (4) are used in combination with the phenolic resin (B) indicated by general formula (5), optimum efficiency can be obtained in terms of the weldability after crack resistance and warpage and the moisture absorption.

Epoxidized polybutadiene compound (C-1)

Epoxidised polybutadiene compound (C-1) used in present embodiment can be compound described in embodiment 1.Its content is preferably the 0.05wt%-5wt% of composition epoxy resin gross weight, including two endpoint values；Particularly preferably 0.1wt%-2wt%, including two endpoint values.When its content is in above range, the elasticity modulus and viscosity that can lead to composition epoxy resin are reduced.

The number-average molecular weight of epoxidized polybutadiene compound (C-1) in present embodiment is preferably 500 to 4000, including two endpoint values.When number-average molecular weight within the above range when, cured article shows excellent soldering resistance, and the viscosity that can avoid composition epoxy resin increases.

Inorganic filler (D)

It can be filler described in embodiment 1 for the inorganic filler (D) in embodiment 4.When balancing plasticity and reliability, the total content of inorganic filler is preferably the 80wt%-94wt% of composition epoxy resin gross weight, including two endpoint values.The content of above range can avoid cure shrinkage during forming/solidification and from forming temperature to room temperature caused by thermal contraction, thus be reduced warpage.Moreover, reducing the hydroscopicity of cured article, therefore anti-welding fragility is made to be improved.In addition, mobility is also improved, to obtain good formability.

Curing accelerator (E)

Curing accelerator used in embodiment 4 (E) can be the compound as described in embodiment 1.

Epoxy resin (F)

Epoxy resin (F) in embodiment 4 can be the epoxy resin as described in embodiment 3.

Other components

Composition epoxy resin used in embodiment 4 may also include additional component in addition to including said components (A)-(F).And, if it is desired, composition can uitably include any various additive, and the additive includes γ-glycidyl ether oxygen propyl trimethoxy silicane coupling agent of such as silane coupling agent.

Composition epoxy resin used in present embodiment can be by preparing as follows: component (A) to (F) and other additives being passed through blender at room temperature and mixed, the mixture is mediated followed by such as kneadings tool such as roller mill, kneader and extruder, then cooling and mixture of milling.

The composition epoxy resin of embodiment 4 can the manufacture as described in embodiment 1.And the composition epoxy resin can be used for packaged electronic components such as semiconductor chip with manufacturing semiconductor devices, as described in embodiment 1.

Embodiment 5

The composition epoxy resin for packaged semiconductor of embodiment 5 includes following components (A)-(C-2) and (F):

(A) crystalline epoxy resin indicated by general formula (4),

(B) phenolic resin indicated by general formula (5),

(C-2) hycar, and

(F) epoxy resin indicated by general formula (6).

In general formula (4), X is selected from singly-bound ,-O- ,-S- and-C (R2)₂Group；R1 is the alkyl with 1 to 6 carbon atom；Two or more R1 may be the same or different；M is the integer of 0-4；R2 is hydrogen or alkyl with 1 to 4 carbon atoms；Two or more R2 may be the same or different.

In general formula (5), R1 and R2 stand alone as hydrogen or alkyl with 1 to 4 carbon atoms；Two or more R1 or two or more R2 may be the same or different；A is the integer of 0-3；B is the integer of 0-4；N is average value, and is the positive number of 1-5.

In general formula (6), R1 and R2 stand alone as hydrogen or alkyl with 1 to 4 carbon atoms；Two or more R1 or two or more R2 may be the same or different；A is the integer of 0-3；B is the integer of 0-4；N is average value, and is the positive number of 1-5.

This composition epoxy resin can meet the condition of high-content inorganic filler and high fluidity simultaneously.Therefore, the composition can significantly efficiently reduce the warpage of surface mount type semiconductor device, and reliability also can be improved, such as improve soldering resistance.

Embodiment 5 will be illustrated.

Crystalline epoxy resin (A)

Crystalline epoxy resin used in embodiment 5 (A) can be the epoxy resin indicated as described in embodiment 3 by general formula (4).

In embodiment 5, the weight ratio [(F)/(A)] of epoxy resin (F) and crystalline epoxy resin (A) are 10/90 to 90/10, including two endpoint values；Preferably 20/80 to 70/30, including two endpoint values；Particularly preferably 30/70 to 50/50, including two endpoint values.When weight ratio [(F)/(A)] within the above range when, the cured article made of composition epoxy resin can express lower hydroscopicity, and mobility of the inorganic filler without the composition epoxy resin during damaging forming of high-content can be added, to obtain excellent soldering resistance.

In embodiment 5, as long as the characteristic that will not make the use due to epoxy resin (F) and crystalline epoxy resin (A) and obtain is deteriorated, the additional epoxy resin as described in embodiment 3 can be added.If being added to additional epoxy resin, the content of additional epoxy resin is preferably that the content of epoxy resin (F) and crystalline epoxy resin (A) is caused to be the 70wt% to 100wt% of epoxy resin total amount, including two endpoint values.When the total amount of epoxy resin (F) and crystalline epoxy resin (A) within the above range when, can get satisfactory agent of low hygroscopicity and enough soldering resistances.

Phenolic resin (B)

Phenolic resin used in embodiment 5 (B) can be the phenolic resin indicated by general formula (5).

In this reality formula scheme, it is deteriorated, can be used in combination with other phenolic resin described in embodiment 3 as long as not will lead to the characteristic obtained using phenolic resin (B).When used in association, the content of additional phenolic resin preferably causes the content of phenolic resin (B) to be the 40wt% to 100wt% of phenolic resin total amount, including two endpoint values.When phenolic resin (B) within the above range when, can get satisfactory agent of low hygroscopicity and enough soldering resistances.

Hycar (C-2)

Hycar used in embodiment 5 (C-2) can be the compound indicated as described in embodiment 2 by general formula (3), it is not limited to this.The content of hycar (C-2) is preferably the 0.05wt%-5wt% of composition epoxy resin gross weight, including two endpoint values；Particularly preferably 0.1wt%-0.3wt%, including two endpoint values.The content of above range can improve the caking property between cured article and substrate.It moreover, improving the mobility of composition epoxy resin, be reliably filled wherein it can in forming process.Further, since the viscosity of composition epoxy resin becomes smaller, thus it can avoid the gold thread deformation in such as semiconductor devices.

Epoxy resin (F)

Epoxy resin (F) in embodiment 5 can be the epoxy resin indicated as described in embodiment 3 by general formula (6).

The composition epoxy resin for packaged semiconductor in present embodiment may also include inorganic filler (D) and/or curing accelerator (E) other than including component (A)-(C-2) and (F).

Inorganic filler (D)

Inorganic filler used in embodiment 5 (D) can be filler described in embodiment 1.The content of inorganic filler is the 80wt%-95wt% of composition epoxy resin total amount, including two endpoint values；Preferably 86wt%-93wt%, including two endpoint values.Content in above range can prevent soldering resistance caused by the increase due to hydroscopicity and thermal expansion coefficient to be deteriorated.In addition, can also prevent the warpage of cured article.Also, the mobility for improving composition epoxy resin be reliably filled wherein it can in forming process.Also further viscosity can be made to reduce, thus prevent and generate the problems such as such as gold thread deforms in semiconductor devices.

Curing accelerator (E)

Curing accelerator used in embodiment 5 (E) can be compound described in embodiment 3.

Other than component (A)-(F), the epoxy resin of present embodiment may also include above-mentioned annexing ingredient.And, if necessary, composition can uitably include any various additives, and the additive includes such as coupling agents such as epoxy silane, hydrosulphonyl silane, amino silane, ureido silane and vinyl silanes silane coupling agent and titanate coupling agent, aluminum coupling agent and aluminium/zirconium coupling agent.

Composition epoxy resin in embodiment 5 can be prepared as described in embodiment 1.Moreover, as described above, the composition epoxy resin can be used for encapsulating electronic component such as semiconductor chip to prepare semiconductor devices.

Embodiment

The present invention will be illustrated referring to embodiment, but the present invention is not limited to embodiments.Here, any content is all indicated with wt%.

Test example A

Test example a-1

Epoxy resin 1: biphenyl type epoxy resin (Japan Epoxy Resins Co., Ltd., YX4000K, fusing point: 105 DEG C, epoxide equivalent: 185): 4.13wt%

Phenolic resin 1: with biphenylene part phenol aralkyl resin (Meiwa PlasticIndustries, Ltd., MEH7851SS, softening point: 65 DEG C, hydroxyl equivalent: 203): 4.54wt%

Triphenylphosphine: 0.13wt%

Spherical fused silica (average grain diameter: 30 μm): 90.00wt%

Epoxidized polybutadiene compound 1 (Nippon Petrochemicals Company, E-1800-6.5, number-average molecular weight: 1800, viscosity (25 DEG C): 350Pas): 0.50wt%

γ-glycidylpropyl trimethoxy silane: 0.20wt%

Brazil wax: 0.20wt%

Carbon black: 0.30wt%

These components are mixed with blender.Then the mixture is mediated with double roller, the surface temperature of double roller is 90 DEG C and 45 DEG C.After cooling, the mixture of milling obtains composition epoxy resin.Resulting composition epoxy resin is evaluated by the following method.As a result it is shown in Table 1.

Evaluation method

Eddy flow: the temperature of Measurement die is 175 DEG C, injection pressure 6.9MPa, and curing time is 2 minutes, measures eddy flow according to EMMI-1-66.It indicates that unit is centimetre.

The warpage of encapsulation: 352-pin BGA package is formed under the following conditions with transfer moIding machine:

Forming temperature: 175 DEG C, injection pressure: 6.9MPa, curing time: 2 minutes；

Wherein substrate is bismaleimide-triazine resin/fiberglass substrate, with a thickness of 0.56mm；The size of semiconductor devices is 30mm × 30mm (with a thickness of 1.17mm)；The size of semiconductor chip is 10mm × 10mm (with a thickness of 0.35mm)；Landing pad connection in the gold thread and wiring board that semiconductor chip is 25 μm by diameter.Solidify after being carried out 2 hours at 175 DEG C, obtains sample.It is cooled to room temperature thus obtained a set of ten semiconductor devices.Then, using surface roughness tester, the displacement along short transverse is measured from the diagonal direction of the door (gate) of encapsulation.The maximum displacement difference of measurement is angularity, and unit is micron (μm).

Gold thread deformation rate: the 352-pin BGA package formed by the observation of grenz ray scenograph for evaluating the warpage of encapsulation indicates gold thread deformation rate, unit % with flow/gold thread length ratio.

Soldering resistance: make as the method formed 352-pin BGA package 175 DEG C at a temperature of carry out 2 hours after curing process, obtain the sample for evaluating warpage of packaging assembly.Resulting a set of ten encapsulation handle 168 hours under 60 DEG C of temperature, the atmosphere that relative humidity is 60%；168 hours are handled under 85 DEG C of temperature, the atmosphere that relative humidity is 60%；Then 85 DEG C temperature, relative humidity be 85% atmosphere under carry out processing 72 hours.Later, encapsulation is made to be subjected to IR stream process again under 260 DEG C of peak temperature (handling 10 seconds under 255 DEG C or higher temperature).After processing, internal removing or the presence of crackle are observed by reflectoscope, and calculate the number of defective product of semiconductor devices.When the number of defective product of semiconductor devices is n, defect rate is expressed as n/10.

Test example a-2 to a-11 and b-1 to b-7

According to the composition in Tables 1 and 2, composition epoxy resin is prepared, and it is evaluated according to test example a-1.Evaluation result is shown in table in 1 and table 2.

The following are the components other than component used in test example a-1:

Epoxy resin 2: o-cresol formaldehyde type epoxy resin (epoxide equivalent: 196, softening point: 55 DEG C)

Phenolic resin 2: with phenylen moiety phenol aralkyl resin (Mitsui Chemicals Inc., XLC-LL, softening point: 75 DEG C, hydroxyl equivalent: 175)

Phenolic resin 3: linear phenol-aldehyde resin (softening point: 80 DEG C, hydroxyl equivalent: 105)

1,8- diazabicyclo (5,4,0) hendecene -7 (hereinafter referred to as " DBU ")

Epoxidized polybutadiene compound 2 (number-average molecular weight: 700, viscosity (25 DEG C): 10Pas) epoxidized polybutadiene compound 3 (number-average molecular weight: 2000, viscosity (25 DEG C): 550Pas).

Table 1

		Test example
		Test example													a-1	a-2	a-3	a-4	a-5	a-6	a-7	a-8	a-9	a-10	a-11
Epoxy resin 1		4.13	3.20	5.07	4.31	3.64	2.10	4.31	4.95	4.13	4.13	4.13			a-1	a-2	a-3	a-4	a-5	a-6	a-7	a-8	a-9	a-10	a-11
Epoxy resin 1		4.13	3.20	5.07	4.31	3.64	2.10	4.31	4.95	4.13	4.13	4.13	Epoxy resin 2							2.10
Phenolic resin 1		4.54	3.50	5.57	4.73	4.00	4.47	2.18	1.86	4.54	4.54	4.54	Epoxy resin 2							2.10
Phenolic resin 1		4.54	3.50	5.57	4.73	4.00	4.47	2.18	1.86	4.54	4.54	4.54	Phenolic resin 2								2.18
Phenolic resin 3									1.86				Phenolic resin 2								2.18
Phenolic resin 3									1.86				Triphenylphosphine		0.13	0.10	0.16	0.16	0.16	0.13	0.13	0.13	0.13	0.13
DBU												0.13	Triphenylphosphine		0.13	0.10	0.16	0.16	0.16	0.13	0.13	0.13	0.13	0.13
DBU												0.13	Melt spherical quartz		90.00	92.00	88.00	90.00	90.00	90.00	90.00	90.00	90.00	90.00	90.00
Epoxidized polybutadiene compound 1		0.50	0.50	0.50	0.10	1.50	0.50	0.50	0.50			0.50	Melt spherical quartz		90.00	92.00	88.00	90.00	90.00	90.00	90.00	90.00	90.00	90.00	90.00
Epoxidized polybutadiene compound 1		0.50	0.50	0.50	0.10	1.50	0.50	0.50	0.50			0.50	Epoxidized polybutadiene compound 2										0.50
Epoxidized polybutadiene compound 3											0.50		Epoxidized polybutadiene compound 2										0.50
Epoxidized polybutadiene compound 3											0.50		γ-glycidylpropyl trimethoxy silane		0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20
Brazil wax		0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	γ-glycidylpropyl trimethoxy silane		0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20
Brazil wax		0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	Carbon black		0.30	0.30	0.30	0.30	0.30	0.30	0.30	0.30	0.30	0.30	0.30
Eddy flow	(cm)	145	121	167	149	134	135	143	140	151	136	141	Carbon black		0.30	0.30	0.30	0.30	0.30	0.30	0.30	0.30	0.30	0.30	0.30
Eddy flow	(cm)	145	121	167	149	134	135	143	140	151	136	141	The warpage of encapsulation	(μm)	38	14	54	36	42	38	36	35	37	39	39
Gold	(%)	3	4	2	2	4	4	3	3	2	4	3	The warpage of encapsulation	(μm)	38	14	54	36	42	38	36	35	37	39	39

Line deformation rate
Line deformation rate													Soldering resistance	After handling 168 hours under 60 DEG C/60%	0/10	0/10	0/10	0/10	0/10	0/10	0/10	0/10	0/10	0/10	0/10
After handling 168 hours under 85 DEG C/60%	0/10	0/10	2/10	1/10	0/10	2/10	1/10	2/10	1/10	0/10	0/10			After handling 168 hours under 60 DEG C/60%	0/10	0/10	0/10	0/10	0/10	0/10	0/10	0/10	0/10	0/10	0/10
After handling 168 hours under 85 DEG C/60%	0/10	0/10	2/10	1/10	0/10	2/10	1/10	2/10	1/10	0/10	0/10	After handling 72 hours under 85 DEG C/85%		2/10	0/10	4/10	3/10	0/10	5/10	3/10	5/10	2/10	1/10	2/10

Table 2

		Test example
		Test example							b-1	b-2	b-3	b-4	b-5	b-6	b-7
		Epoxy resin 1		4.37	1.51	1.31	7.42		b-1	b-2	b-3	b-4	b-5	b-6	b-7	4.46	5.53
Epoxy resin 2		Epoxy resin 1		4.37	1.51	1.31	7.42						4.26			4.46	5.53
Epoxy resin 2		Phenolic resin 1		4.80	1.66	1.44	8.14	4.41					4.26
Phenolic resin 2		Phenolic resin 1		4.80	1.66	1.44	8.14	4.41						4.21
Phenolic resin 2		Phenolic resin 3												4.21			3.14
Triphenylphosphine		Phenolic resin 3							0.13	0.13	0.05	0.24	0.13	0.13	0.13		3.14
Triphenylphosphine									0.13	0.13	0.05	0.24	0.13	0.13	0.13
Melt spherical quartz									90.00	90.00	96.00	83.00	90.00	90.00	90.00
Melt spherical quartz		Epoxidized polybutadiene compound 1			6.00	0.50	0.50	0.50	90.00	90.00	96.00	83.00	90.00	90.00	90.00	0.50	0.50
γ-glycidylpropyl trimethoxy silane		Epoxidized polybutadiene compound 1			6.00	0.50	0.50	0.50	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.50	0.50
γ-glycidylpropyl trimethoxy silane		Brazil wax		0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20
Carbon black		Brazil wax		0.20	0.20	0.20	0.20	0.20	0.30	0.30	0.30	0.30	0.30	0.30	0.30	0.20	0.20
Carbon black		Eddy flow	(cm)	150	87	35	230	64	0.30	0.30	0.30	0.30	0.30	0.30	0.30	149	156
The warpage of encapsulation	(μm)	Eddy flow	(cm)	150	87	35	230	64	35	59	It is not filled by	112	40	37	36	149	156
The warpage of encapsulation	(μm)	Gold thread deformation rate	(%)	2	8	It is not filled by	1	10	35	59	It is not filled by	112	40	37	36	2	2
Soldering resistance	After handling 168 hours under 60 DEG C/60%	Gold thread deformation rate	(%)	2	8	It is not filled by	1	10	0/10	0/10	It is not filled by	7/10	0/10	1/10	2/10	2	2
	After handling 168 hours under 60 DEG C/60%	After handling 168 hours under 85 DEG C/60%	4/10	0/10	It is not filled by	10/10	3/10	7/10	0/10	0/10	It is not filled by	7/10	0/10	1/10	2/10	8/10
	After handling 72 hours under 85 DEG C/85%	After handling 168 hours under 85 DEG C/60%	4/10	0/10	It is not filled by	10/10	3/10	7/10	6/10	0/10	It is not filled by	10/10	6/10	10/10	10/10	8/10

Test example B

Test example a-1

Epoxy resin 1: biphenyl type epoxy resin (Japan Epoxy Resins Co., Ltd., YX4000K, fusing point: 105 DEG C, epoxide equivalent: 185): 4.29 parts by weight

Phenolic resin 1: with biphenylene part phenol aralkyl resin (Meiwa PlasticIndustries, Ltd., MEH7851SS, softening point: 65 DEG C, hydroxyl equivalent: 203): 4.71 parts by weight

Hycar (Ube Industries, Ltd., HYCAR CTBN 1008-SP, x=0.82, y=0.18, z=62 (average value)): 0.15 parts by weight

Triphenylphosphine: 0.15 parts by weight

It melts spherical quartz (average grain diameter: 30 μm): 90.00 parts by weight

γ-glycidylpropyl trimethoxy silane: 0.20 parts by weight

Brazil wax: 0.20 parts by weight

Carbon black: 0.30 parts by weight

These components are mixed with blender.Then the mixture is mediated with double roller, the surface temperature of double roller is 90 DEG C and 45 DEG C.After cooling, the mixture of milling obtains composition epoxy resin.Resulting composition epoxy resin is evaluated by the following method.As a result it is shown in Table 3.

Evaluation method

Eddy flow: it is measured under conditions of as described in test example A.Sample of the eddy flow lower than 100cm is rejected product.

The warpage of encapsulation: it is measured under conditions of as described in test example A.It measures downwardly projecting 60 μm or more of sample and is rated as substandard products.

Gold thread deformation rate: it is measured under conditions of as described in test example A.The sample that measured value is 3% or more is rated as substandard products.

Soldering resistance: make as the method formed 352-pin BGA package 175 DEG C at a temperature of carry out 2 hours after curing process, obtain the sample for evaluating warpage of packaging assembly.Resulting a set of 10 encapsulation, handle 168 hours under 60 DEG C of temperature, the atmosphere that relative humidity is 60%；168 hours are handled under 85 DEG C of temperature, the atmosphere that relative humidity is 60%.Later, encapsulation is made to be subjected to IR stream process again under 260 DEG C of peak temperature (handling 10 seconds under 255 DEG C or higher temperature).After processing, internal removing or the presence of crackle are observed by reflectoscope, and calculate the number of defective product of semiconductor devices.When the number of defective product of semiconductor devices is n, defect rate is expressed as n/10.

Test example a-2 to a-10 and b-1 to b-4

According to the composition in table 3,4 and 5, composition epoxy resin is prepared, and it is evaluated as described in test example a-1.Evaluation result is shown in table in 3,4 and 5.

The following are the components other than component used in test example a-1:

Epoxy resin 2: tris-phenol type epoxy resin (Japan Epoxy Resins Co.Ltd., E-1032H60, softening point: 59 DEG C, epoxide equivalent: 169)

1,8- diazabicyclo (5,4,0) hendecene -7 (hereinafter referred to as " DBU ")

γ mercaptopropyitrimethoxy silane

Table 3

		Test example
		Test example					a-1	a-2	a-3	a-4	a-5
		Epoxy resin 1		4.29	3.30	5.16	a-1	a-2	a-3	a-4	a-5	4.40	4.95
Phenolic resin 1		Epoxy resin 1		4.29	3.30	5.16	4.71	3.73	5.81	2.30	2.03	4.40	4.95
Phenolic resin 1		Phenolic resin 2					4.71	3.73	5.81	2.30	2.03	2.30
Phenolic resin 3		Phenolic resin 2									2.03	2.30
Phenolic resin 3		Hycar		0.15	0.15	0.15					2.03	0.15	0.15
Triphenylphosphine		Hycar		0.15	0.15	0.15	0.15	0.12	0.18	0.15	0.15	0.15	0.15
Triphenylphosphine		Melt spherical quartz		90.00	92.00	88.00	0.15	0.12	0.18	0.15	0.15	90.00	90.00
γ-glycidylpropyl trimethoxy silane		Melt spherical quartz		90.00	92.00	88.00	0.20	0.20	0.20	0.20	0.20	90.00	90.00
γ-glycidylpropyl trimethoxy silane		Brazil wax		0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20
Carbon black		Brazil wax		0.20	0.20	0.20	0.30	0.30	0.30	0.30	0.30	0.20	0.20
Carbon black		Eddy flow	(cm)	150	126	185	0.30	0.30	0.30	0.30	0.30	160	155
The warpage of encapsulation	(μm)	Eddy flow	(cm)	150	126	185	35	15	50	33	32	160	155
The warpage of encapsulation	(μm)	Gold thread deformation rate	(%)	1.5	2.7	0.9	35	15	50	33	32	1.3	1.5
Soldering resistance	After handling 168 hours under 60 DEG C/60%	Gold thread deformation rate	(%)	1.5	2.7	0.9	0/10	0/10	0/10	0/10	0/10	1.3	1.5
	After handling 168 hours under 60 DEG C/60%	After handling 168 hours under 85 DEG C/60%	0/10	0/10	0/10	0/10	0/10	0/10	0/10	0/10	0/10	0/10

Table 4

		Test example
		Test example					a-6	a-7	a-8	a-9	a-10
		Epoxy resin 1		3.40	4.25	4.16	a-6	a-7	a-8	a-9	a-10	4.29	4.29
Epoxy resin 2		Epoxy resin 1		3.40	4.25	4.16	0.85					4.29	4.29
Epoxy resin 2		Phenolic resin 1		4.75	4.80	4.69	0.85					4.71	4.71
Hycar		Phenolic resin 1		4.75	4.80	4.69	0.15	0.10	0.30	0.15	0.15	4.71	4.71
Hycar		Triphenylphosphine		0.15	0.15	0.15	0.15	0.10	0.30	0.15	0.15	0.15
DBU		Triphenylphosphine		0.15	0.15	0.15					0.15	0.15
DBU		Melt spherical quartz		90.00	90.00	90.00					0.15	90.00	90.00
γ-glycidylpropyl trimethoxy silane		Melt spherical quartz		90.00	90.00	90.00	0.20	0.20	0.20		0.20	90.00	90.00
γ-glycidylpropyl trimethoxy silane		γ mercaptopropyitrimethoxy silane					0.20	0.20	0.20		0.20	0.20
Brazil wax		γ mercaptopropyitrimethoxy silane					0.20	0.20	0.20	0.20	0.20	0.20
Brazil wax		Carbon black		0.30	0.30	0.30	0.20	0.20	0.20	0.20	0.20	0.30	0.30
Eddy flow	(cm)	Carbon black		0.30	0.30	0.30	121	160	130	155	125	0.30	0.30
Eddy flow	(cm)	The warpage of encapsulation	(μm)	12	37	25	121	160	130	155	125	35	26
Gold thread deformation rate	(%)	The warpage of encapsulation	(μm)	12	37	25	2.8	1.2	2.5	1.2	2.5	35	26
Gold thread deformation rate	(%)	Soldering resistance	After handling 168 hours under 60 DEG C/60%	0/10	0/10	0/10	2.8	1.2	2.5	1.2	2.5	0/10	0/10
After handling 168 hours under 85 DEG C/60%	0/10		After handling 168 hours under 60 DEG C/60%	0/10	0/10	0/10	0/10	0/10	0/10	0/10		0/10	0/10

Table 5

		Test example
		Test example				b-1	b-2	b-3	b-4
		Epoxy resin 1		4.59	5.76	b-1	b-2	b-3	b-4		4.31
Epoxy resin 2		Epoxy resin 1		4.59	5.76			4.09			4.31
Epoxy resin 2		Phenolic resin 1						4.09		4.91	4.84
Phenolic resin 2		Phenolic resin 1				4.41				4.91	4.84
Phenolic resin 2		Phenolic resin 3			3.24	4.41
Hycar		Phenolic resin 3			3.24	0.15	0.15	0.15
Hycar		Triphenylphosphine		0.15	0.15	0.15	0.15	0.15		0.15	0.15
Melt spherical quartz		Triphenylphosphine		0.15	0.15	90.00	90.00	90.00	90.00	0.15	0.15
Melt spherical quartz		γ-glycidylpropyl trimethoxy silane		0.20	0.20	90.00	90.00	90.00	90.00	0.20	0.20
Brazil wax		γ-glycidylpropyl trimethoxy silane		0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20
Brazil wax		Carbon black		0.30	0.30	0.20	0.20	0.20	0.20	0.30	0.30
Eddy flow	(cm)	Carbon black		0.30	0.30	155	154	82	95	0.30	0.30
Eddy flow	(cm)	The warpage of encapsulation	(μm)	31	32	155	154	82	95	5	37
Gold thread deformation rate	(%)	The warpage of encapsulation	(μm)	31	32	1.7	3.0	9.0	5.0	5	37
Gold thread deformation rate	(%)	Soldering resistance	After handling 168 hours under 60 DEG C/60%	1/10	1/10	1.7	3.0	9.0	5.0	1/10	5/10
After handling 168 hours under 85 DEG C/60%	5/10		After handling 168 hours under 60 DEG C/60%	1/10	1/10	7/10	3/10	10/10		1/10	5/10

Test example C

Test example a-1

Epoxy resin 1: phenol xenyl aralkyl-type epoxy resin (Nippon Kayaku Co.Ltd., NC3000P, epoxide equivalent: 274, softening point: 58 DEG C): 1.47 parts by weight

Epoxy resin 2: bisphenol A-type crystalline epoxy resin (Japan Epoxy Resins Co.Ltd., YL6810, epoxide equivalent: 171, fusing point: 45 DEG C): 3.41 parts by weight

Phenolic resin 1: phenol xenyl aralkyl resin (Meiwa Plastic Industries, Ltd., MEH-7851SS, hydroxyl equivalent: 203, softening point: 65 DEG C): 5.12 parts by weight

Triphenylphosphine: 0.15 parts by weight

Spherical fused silica (average grain diameter: 30 μm): 88.85 parts by weight

(the viscosity at 25 DEG C: 350Pas, the oxygen content in ethylene oxide: 6.5%): 0.30 parts by weight of polybutadiene 1

N- phenyl-gamma-amino propyl trimethoxy silicane: 0.20 parts by weight

Brazil wax: 0.20 parts by weight

Carbon black: 0.30 parts by weight

These components are mixed at room temperature with blender.At 70 DEG C to 120 DEG C, the mixture is mediated with double roller.After cooling, the mixture of milling obtains composition epoxy resin.Resulting composition epoxy resin is evaluated by the following method.Acquired results are shown in Table 6.

Evaluation method

Eddy flow: it is measured under conditions of as described in test example A.

MAP formed products (are not filled by hole): under the following conditions, make MAP-QFN (metal substrate: the copper frame with nickel-palladium-gold coating using transfer moIding machine, encapsulating face size: 45mm × 62mm, thickness: 0.65mm, semiconductor devices (QFN-16L) chip size: 4.0mm × 4.0mm, semiconductor element size: 1.5mm × 1.5mm, thickness: 0.2mm is passivated type: SiN) forming:

Forming temperature: 175 DEG C, injection pressure: 6.9MPa, curring time: 90 seconds.

Calculating is not filled by number of apertures.

The warpage of encapsulation: the displacement along short transverse is measured along the longitudinal direction using surface roughness tester for the MAP-QFN (being not filled by hole) for evaluating MAP formed products and being formed.The maximum displacement difference of measurement is the warpage of encapsulation, and unit is micron (μm).

Soldering resistance: forming above-mentioned MAP-QFN, make its 175 DEG C at a temperature of, carry out 4 hours after curing process.Then independent small pieces are cut into, semiconductor devices (QFN-16L) sample is obtained.A set of 20 samples obtained are handled under the following conditions respectively: carrying out 120 hours of processing under conditions of 60 DEG C of temperature, relative humidity are 60%, then 85 DEG C temperature, relative humidity be 60% under conditions of carry out 168 hours of processing.Later, sample is made to be subjected to stream process (260 DEG C) 10 seconds again IR.The presence of the various interfacial separations of sample is observed by reflectoscope.Encapsulation number of defective product when there is interfacial separation is n, and defect rate is expressed as n/20.

Test example a-2 to a-12 and b-1 to b-9

According to the composition in table 6 and table 7, composition epoxy resin is prepared, and it is evaluated as described in test example a-1.Evaluation result is shown in table in 6 and table 7.The following are the components other than component used in test example a-1:

Epoxy resin 3: biphenyl type epoxy resin (Japan Epoxy Resins Co.Ltd., YX4000K, softening point: 105 DEG C, epoxide equivalent: 185)

Phenolic resin 2: phenol aralkyl resin (Mitsui Chemicals Inc., XLC-LL, softening point: 75 DEG C, hydroxyl equivalent: 175)

γ-glycidylpropyl trimethoxy silane

Polybutadiene 2-6

Oxygen content in the ethylene oxide of polybutadiene and the viscosity at 25 DEG C are shown in Table 8.

Table 6

		Test example
		Test example												a-1	a-2	a-3	a-4	a-5	a-6	a-7	a-8	a-9	a-10	a-11	a-12
		Epoxy resin 1		1.47	2.55	0.50	4.97	2.53	2.01	1.47	1.47	1.33	1.47	a-1	a-2	a-3	a-4	a-5	a-6	a-7	a-8	a-9	a-10	a-11	a-12	1.38	1.47
Epoxy resin 2		Epoxy resin 1		1.47	2.55	0.50	4.97	2.53	2.01	1.47	1.47	1.33	1.47	3.41	2.55	4.18	0.62	2.53	2.98	3.41	3.41	3.07	3.41	3.21	3.41	1.38	1.47
Epoxy resin 2		Epoxy resin 3						0.55						3.41	2.55	4.18	0.62	2.53	2.98	3.41	3.41	3.07	3.41	3.21	3.41
Phenolic resin 1		Epoxy resin 3						0.55						5.12	4.90	5.32	4.41	4.60	4.00	5.12	5.12	4.60	5.12	4.81	5.12
Phenolic resin 1		Phenolic resin 2							1.01					5.12	4.90	5.32	4.41	4.60	4.00	5.12	5.12	4.60	5.12	4.81	5.12
Triphenylphosphine		Phenolic resin 2							1.01					0.15	0.15	0.15	0.15	0.15	0.15	0.15	0.15	0.15	0.15	0.15	0.15
Triphenylphosphine		Melt spherical quartz		88.8 5	88.8 5	88.8 5	88.8 5	88.8 5	88.8 5	88.8 5	88.8 5	88.8 5	89.0 7	0.15	0.15	0.15	0.15	0.15	0.15	0.15	0.15	0.15	0.15	0.15	0.15	88.8 5	88.9 7
Polybutadiene 1		Melt spherical quartz		88.8 5	88.8 5	88.8 5	88.8 5	88.8 5	88.8 5	88.8 5	88.8 5	88.8 5	89.0 7	0.30	0.30	0.30	0.30	0.30	0.30			1.30	0.08	0.30	0.30	88.8 5	88.9 7
Polybutadiene 1		Polybutadiene 2								0.30				0.30	0.30	0.30	0.30	0.30	0.30			1.30	0.08	0.30	0.30
Polybutadiene 3		Polybutadiene 2								0.30											0.30
Polybutadiene 3		Polybutadiene 4																			0.30
Polybutadiene 5		Polybutadiene 4
Polybutadiene 5		Polybutadiene 6
N- phenyl-gamma-amino propyl trimethoxy silicane		Polybutadiene 6												0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.80	0.08
N- phenyl-gamma-amino propyl trimethoxy silicane		γ-glycidylpropyl trimethoxy silane												0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.80	0.08
Brazil wax		γ-glycidylpropyl trimethoxy silane												0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20
Brazil wax		Carbon black		0.30	0.30	0.30	0.30	0.30	0.30	0.30	0.30	0.30	0.30	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.30	0.30
Eddy flow	(cm)	Carbon black		0.30	0.30	0.30	0.30	0.30	0.30	0.30	0.30	0.30	0.30	110	100	140	92	113	110	123	95	93	101	95	100	0.30	0.30
Eddy flow	(cm)	MAP formed products (unfilled hole)	(number)	0	0	0	0	0	0	0	0	0	0	110	100	140	92	113	110	123	95	93	101	95	100	0	0
MAP warpage	(μm)	MAP formed products (unfilled hole)	(number)	0	0	0	0	0	0	0	0	0	0	200	180	300	150	250	220	200	210	160	200	220	200	0	0
MAP warpage	(μm)	Soldering resistance	(60 DEG C/60%/120 is small	0/20	0/20	0/20	0/20	0/20	0/20	0/20	0/20	0/20	0/20	200	180	300	150	250	220	200	210	160	200	220	200	0/20	0/10

	When)
	When)													(85 DEG C/60%/168 hour)	2/20	3/20	1/20	4/20	3/20	3/20	3/20	1/20	3/20	4/20	1/20	5/20

Table 7

		Test example
		Test example									b-1	b-2	b3	b-4	b-5	b-6	b-7	b-8	b-9
		Epoxy resin 1		5.75		2.00	2.36	0.47	1.47	1.47	b-1	b-2	b3	b-4	b-5	b-6	b-7	b-8	b-9	1.47	1.47
Epoxy resin 2		Epoxy resin 1		5.75		2.00	2.36	0.47	1.47	1.47		4.59	2.90	5.46	1.00	3.41	3.41	3.41	3.41	1.47	1.47
Epoxy resin 2		Epoxy resin 3										4.59	2.90	5.46	1.00	3.41	3.41	3.41	3.41
Phenolic resin 1		Epoxy resin 3									4.25	5.41		8.18	1.53	5.12	5.12	5.12	5.12
Phenolic resin 1		Phenolic resin 2				5.10					4.25	5.41		8.18	1.53	5.12	5.12	5.12	5.12
Triphenylphosphine		Phenolic resin 2				5.10					0.15	0.15	0.15	0.15	0.15	0.15	0.15	0.15	0.15
Triphenylphosphine		Spherical fused silica		88.85	88.85	88.85	82.85	95.85	88.85	88.85	0.15	0.15	0.15	0.15	0.15	0.15	0.15	0.15	0.15	88.85	88.85
Polybutadiene 1		Spherical fused silica		88.85	88.85	88.85	82.85	95.85	88.85	88.85	0.30	0.30	0.30	0.30	0.30				0.30	88.85	88.85
Polybutadiene 1		Polybutadiene 2									0.30	0.30	0.30	0.30	0.30				0.30
Polybutadiene 3		Polybutadiene 2
Polybutadiene 3		Polybutadiene 4							0.30
Polybutadiene 5		Polybutadiene 4							0.30								0.30
Polybutadiene 5		Polybutadiene 6															0.30			0.30
N- phenyl-gamma-amino propyl trimethoxy silicane		Polybutadiene 6									0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20		0.30
N- phenyl-gamma-amino propyl trimethoxy silicane		γ-glycidylpropyl trimethoxy silane									0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20			0.20
Brazil wax		γ-glycidylpropyl trimethoxy silane									0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20		0.20
Brazil wax		Carbon black		0.30	0.30	0.30	0.30	0.30	0.30	0.30	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.30	0.30
Eddy flow	(cm)	Carbon black		0.30	0.30	0.30	0.30	0.30	0.30	0.30	78	155	100	110	30	78	130	60	110	0.30	0.30
Eddy flow	(cm)	MAP formed products (unfilled hole)	(number)	5	0	0	0	> 20	8	0	78	155	100	110	30	78	130	60	110	20	0
MAP warpage	(μm)	MAP formed products (unfilled hole)	(number)	5	0	0	0	> 20	8	0	140	350	240	400	(^*1)	200	250	200	200	20	0

Soldering resistance	(60 DEG C/60%/120 hour)	0/20	0/20	0/20	0/20	(^*1)	0/20	0/20	0/20	4/20
	(60 DEG C/60%/120 hour)	0/20	0/20	0/20	0/20	(^*1)	0/20	0/20	0/20	4/20	(85 DEG C/60%/168 hour)	2/20	2/20	8/20	2/20	(^*1)	2/20	9/20	2/20	20/20

Annotation:^*1；Due to being not filled by, there is no evaluation sample.

Table 8

		Polybutadiene
		Polybutadiene						1	2	3	4	5	6
		The oxygen-containing ratio of ethylene oxide	%	6.5	5	8	9	1	2	3	4	5	6	2	11
Viscosity at 25 DEG C	Pa·s	The oxygen-containing ratio of ethylene oxide	%	6.5	5	8	9	350	200	550	750	10	900	2	11

Test example D

Test example a-1

Epoxy resin 1: phenol xenyl aralkyl-type epoxy resin (Nippon Kayaku Co.Ltd., NC3000P, epoxide equivalent: 274, softening point: 58 DEG C): 1.90 parts by weight

Epoxy resin 2: bisphenol A-type crystalline epoxy resin (Japan Epoxy Resins Co.Ltd., YL6810, epoxide equivalent: 171, fusing point: 45 DEG C): 2.85 parts by weight

Phenolic resin 1: phenol xenyl aralkyl resin (Meiwa Plastic Industries, Ltd., MEH-7851SS, hydroxyl equivalent: 203, softening point: 65 DEG C): 4.65 parts by weight

Triphenylphosphine: 0.20 parts by weight

Spherical fused silica (average grain diameter: 30 μm): 89.00 parts by weight

Epoxidised polybutadiene compound 1:Nippon Petrochemicals Company, E-1800-6.5, number-average molecular weight: 1800, viscosity (25 DEG C): 350Pas:0.50 parts by weight

γ mercaptopropyitrimethoxy silane: 0.40 parts by weight

Brazil wax: 0.20 parts by weight

Carbon black: 0.30 parts by weight

These components are mixed at room temperature with blender.At 70 DEG C to 120 DEG C, the mixture is mediated with double roller.After cooling, the mixture of milling obtains composition epoxy resin.Resulting composition epoxy resin is evaluated by the following method.Acquired results are shown in Table 9.

Evaluation method

Eddy flow: it is measured under conditions of as described in test example A.When eddy flow is less than 90cm, since mobility is too low, it can lead to and such as unfilled defect occur in period in package shape.

The warpage of encapsulation: 352p BGA package is formed under the following conditions using transfer moIding machine:

Wherein substrate is bismaleimide-triazine resin/fiberglass substrate, with a thickness of 0.56mm；Dimensions of semiconductor devices is 30mm × 30mm (with a thickness of 1.17mm)；The size of semiconductor chip is 15mm × 15mm (with a thickness of 0.35mm).At 175 DEG C, after being cooled to room temperature, using surface roughness tester, the displacement along short transverse is measured from the diagonal direction of the door of encapsulation for curing process after carrying out 2 hours.The maximum displacement difference of measurement is the warpage of encapsulation, and unit is for micron (μm).When the warpage of encapsulation is 70 μm or more, then the composition is not suitable for the encapsulating material for encapsulating single side.

Gold thread deformation rate: it is measured under conditions of as described in test example A.When gold thread deformation rate is 4% or more, since the contact between gold thread can make that short circuit occurs.

Soldering resistance: by such as the method formed the 352pBGA for being used to evaluate warpage of packaging assembly 175 DEG C at a temperature of carry out 2 hours after curing process to obtain sample.Then under the following conditions, so that a set of ten samples is carried out soaking processing respectively: 60 DEG C of temperature, relative humidity 60% handle 168 hours；85 DEG C of temperature, relative humidity 60%, handle 168 hours.Later, the presence of the underbead crack and various interface peels of sample is observed by reflectoscope, when encapsulation number of defective product is n, defect rate is expressed as n/10.When encapsulating number of defective product is 3 or less, then sample is evaluated by soldering resistance test.

Test example a-2 to a-26

According to the composition in table 9,10 and 11, composition epoxy resin is prepared, and test example a-1 is evaluated as described in it.Evaluation result is shown in table in 9,10 and 11.The following are the components other than component used in test example a-1:

Epoxy resin 3: o-cresol formaldehyde type epoxy resin (Nippon Kayaku Co.Ltd., EOCN-1020-55, epoxide equivalent: 196, softening point: 55 DEG C)

Phenolic resin 2: phenol phenyl aralkyl resin (Mitsui Chemicals Inc., XLC-LL, softening point: 75 DEG C, hydroxyl equivalent: 175)

1,8- diazabicyclo (5,4,0) hendecene -7 (hereinafter referred to as " DBU ")

Epoxidized polybutadiene compound 2: the compound indicated by general formula (4), wherein k, l, m and n are integer of 1 to 3；R1 has by C_pH_qThe structure of expression；The integer that p is 0 to 3；The integer that q is 1 to 8, number-average molecular weight: 400, viscosity (25 DEG C): 150Pas

Epoxidized polybutadiene compound 3: the compound indicated by general formula (4), wherein the integer that k, l, m and n are 1 to 100；R1 has by C_pH_qThe structure of expression；P is integer of 0 to 10；The integer that q is 1 to 21, number-average molecular weight: 4500, viscosity (25 DEG C): 800Pas

Table 9

		Test example
		Test example									a-1	a-2	a-3	a-4	a-5	a-6	a-7	a-8	a-9
		Epoxy resin 1		1.90	0.91		3.56	5.47	1.42	1.13	a-1	a-2	a-3	a-4	a-5	a-6	a-7	a-8	a-9	1.93	1.94
Epoxy resin 2		Epoxy resin 1		1.90	0.91		3.56	5.47	1.42	1.13	2.85	3.64	4.37	1.53		2.13	1.70	2.90	2.91	1.93	1.94
Epoxy resin 2		Epoxy resin 3							1.18	1.89	2.85	3.64	4.37	1.53		2.13	1.70	2.90	2.91
Phenolic resin 1		Epoxy resin 3							1.18	1.89	4.65	4.85	5.03	4.31	3.93	4.67	4.68	3.43	2.73
Phenolic resin 1		Phenolic resin 2									4.65	4.85	5.03	4.31	3.93	4.67	4.68	3.43	2.73	1.14	1.82
Triphenylphosphine		Phenolic resin 2									0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	1.14	1.82
Triphenylphosphine		DBU									0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20
Spherical fused silica		DBU									89.0 0	89.0 0	89.0 0	89.0 0	89.0 0	89.0 0	89.0 0	89.0 0	89.0 0
Spherical fused silica		Epoxidized polybutadiene compound 1		0.50	0.50	0.50	0.50	0.50	0.50	0.50	89.0 0	89.0 0	89.0 0	89.0 0	89.0 0	89.0 0	89.0 0	89.0 0	89.0 0	0.50	0.50
Epoxidized polybutadiene compound 2		Epoxidized polybutadiene compound 1		0.50	0.50	0.50	0.50	0.50	0.50	0.50										0.50	0.50
Epoxidized polybutadiene compound 2		Epoxidized polybutadiene compound 3
γ mercaptopropyitrimethoxy silane		Epoxidized polybutadiene compound 3									0.40	0.40	0.40	0.40	0.40	0.40	0.40	0.40	0.40
γ mercaptopropyitrimethoxy silane		γ-glycidylpropyl trimethoxy silane									0.40	0.40	0.40	0.40	0.40	0.40	0.40	0.40	0.40
Brazil wax		γ-glycidylpropyl trimethoxy silane									0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20
Brazil wax		Carbon black		0.30	0.30	0.30	0.30	0.30	0.30	0.30	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.30	0.30
Eddy flow	(cm)	Carbon black		0.30	0.30	0.30	0.30	0.30	0.30	0.30	120	135	130	100	90	130	115	130	125	0.30	0.30
Eddy flow	(cm)	The warpage of encapsulation	(μm)	50	67	79	43	53	57	64	120	135	130	100	90	130	115	130	125	56	57
Gold thread deformation rate	(%)	The warpage of encapsulation	(μm)	50	67	79	43	53	57	64	2	1	2	3	5	2	3	2	2	56	57
Gold thread deformation rate	(%)	Soldering resistance	After handling 168 hours under 60 DEG C/60%	0/10	0/10	10/1 0	0/10	0/10	0/10	5/10	2	1	2	3	5	2	3	2	2	0/10	7/10
After handling 168 hours under 85 DEG C/60%	0/10		After handling 168 hours under 60 DEG C/60%	0/10	0/10	10/1 0	0/10	0/10	0/10	5/10	0/10	10/1 0	0/10	0/10	1/10	6/10	1/10	9/10		0/10	7/10

Table 10

		Test example
		Test example									a-10	a-11	a-12	a-13	a-14	a-15	a-16	a-17	a-18
		Epoxy resin 1		1.98	2.00	2.00	1.09	0.79	1.90	1.90	a-10	a-11	a-12	a-13	a-14	a-15	a-16	a-17	a-18	1.90	1.90
Epoxy resin 2		Epoxy resin 1		1.98	2.00	2.00	1.09	0.79	1.90	1.90	2.97	3.00	3.00	1.64	1.18	2.85	2.85	2.85	2.85	1.90	1.90
Epoxy resin 2		Epoxy resin 3									2.97	3.00	3.00	1.64	1.18	2.85	2.85	2.85	2.85
Phenolic resin 1		Epoxy resin 3									4.85	4.89	4.89	2.67	1.93	4.65	4.65	4.65	4.65
Phenolic resin 1		Phenolic resin 2									4.85	4.89	4.89	2.67	1.93	4.65	4.65	4.65	4.65
Triphenylphosphine		Phenolic resin 2									0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20
Triphenylphosphine		DBU									0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20			0.20
Spherical fused silica		DBU									89.00	89.00	89.00	89.00	89.00	89.00	89.00	89.00	89.00		0.20
Spherical fused silica		Epoxidized polybutadiene compound 1		0.10	0.008		4.50	6.00			89.00	89.00	89.00	89.00	89.00	89.00	89.00	89.00	89.00	0.50	0.50
Epoxidized polybutadiene compound 2		Epoxidized polybutadiene compound 1		0.10	0.008		4.50	6.00								0.50				0.50	0.50
Epoxidized polybutadiene compound 2		Epoxidized polybutadiene compound 3								0.50						0.50
γ mercaptopropyitrimethoxy silane		Epoxidized polybutadiene compound 3								0.50	0.40	0.40	0.40	0.40	0.40	0.40	0.40		0.40
γ mercaptopropyitrimethoxy silane		γ-glycidylpropyl trimethoxy silane									0.40	0.40	0.40	0.40	0.40	0.40	0.40		0.40	0.40
Brazil wax		γ-glycidylpropyl trimethoxy silane									0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.40
Brazil wax		Carbon black		0.30	0.30	0.30	0.30	0.30	0.30	0.30	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.30	0.30
Eddy flow	(cm)	Carbon black		0.30	0.30	0.30	0.30	0.30	0.30	0.30	130	158	155	105	90	120	90	115	115	0.30	0.30
Eddy flow	(cm)	The warpage of encapsulation	(μm)	44	50	50	64	79	72	100	130	158	155	105	90	120	90	115	115	53	53
Gold thread deformation rate	(%)	The warpage of encapsulation	(μm)	44	50	50	64	79	72	100	2	2	2	3	5	3	5	3	3	53	53
Gold thread deformation rate	(%)	Soldering resistance	After handling 168 hours under 60 DEG C/60%	0/10	5/10	4/10	0/10	1/10	6/10	2/10	2	2	2	3	5	3	5	3	3	0/10	0/10
After handling 168 hours under 85 DEG C/60%	2/10		After handling 168 hours under 60 DEG C/60%	0/10	5/10	4/10	0/10	1/10	6/10	2/10	6/10	5/10	1/10	2/10	8/10	3/10	0/10	0/10		0/10	0/10

Table 11

		Test example
		Test example								a-19	a-20	a-21	a-22	a-23	a-24	a-25	a-26
		Epoxy resin 1		3.12	4.13	1.09	0.49	1.69	1.41	a-19	a-20	a-21	a-22	a-23	a-24	a-25	a-26	2.21	2.31
Epoxy resin 2		Epoxy resin 1		3.12	4.13	1.09	0.49	1.69	1.41	4.67	6.19	1.64	0.73	2.54	2.11	3.32	3.47	2.21	2.31
Epoxy resin 2		Epoxy resin 3								4.67	6.19	1.64	0.73	2.54	2.11	3.32	3.47
Phenolic resin 1		Epoxy resin 3								7.61	10.09	2.67	1.19	5.17	5.88	3.87	3.62
Phenolic resin 1		Phenolic resin 2								7.61	10.09	2.67	1.19	5.17	5.88	3.87	3.62
Triphenylphosphine		Phenolic resin 2								0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20
Triphenylphosphine		DBU								0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20
Spherical fused silica		DBU								83.00	78.00	93.00	96.00	89.00	89.00	89.00	89.00
Spherical fused silica		Epoxidized polybutadiene compound 1		0.50	0.50	0.50	0.50	0.50	0.50	83.00	78.00	93.00	96.00	89.00	89.00	89.00	89.00	0.50	0.50
Epoxidized polybutadiene compound 2		Epoxidized polybutadiene compound 1		0.50	0.50	0.50	0.50	0.50	0.50									0.50	0.50
Epoxidized polybutadiene compound 2		Epoxidized polybutadiene compound 3
γ mercaptopropyitrimethoxy silane		Epoxidized polybutadiene compound 3								0.40	0.40	0.40	0.40	0.40	0.40	0.40	0.40
γ mercaptopropyitrimethoxy silane		γ-glycidylpropyl trimethoxy silane								0.40	0.40	0.40	0.40	0.40	0.40	0.40	0.40
Brazil wax		γ-glycidylpropyl trimethoxy silane								0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20
Brazil wax		Carbon black		0.30	0.30	0.30	0.30	0.30	0.30	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.30	0.30
Eddy flow	(cm)	Carbon black		0.30	0.30	0.30	0.30	0.30	0.30	140	> 260	95	30	100	90	140	130	0.30	0.30
Eddy flow	(cm)	The warpage of encapsulation	(μm)	64	114	41	It is not filled by	56	114	140	> 260	95	30	100	90	140	130	64	107
Gold thread deformation rate	(%)	The warpage of encapsulation	(μm)	64	114	41	It is not filled by	56	114	1	1	3	It is not filled by	2	5	1	2	64	107
Gold thread deformation rate	(%)	Soldering resistance	After handling 168 hours under 60 DEG C/60%	0/10	10/10	0/10	It is not filled by	0/10	10/10	1	1	3	It is not filled by	2	5	1	2	0/10	10/10
After handling 168 hours under 85 DEG C/60%	2/10		After handling 168 hours under 60 DEG C/60%	0/10	10/10	0/10	It is not filled by	0/10	10/10	10/10	3/10	It is not filled by	3/10	10/10	2/10	10/10		0/10	10/10

Test example E

Test example a-1

Epoxy resin 1: phenol biphenyl aralkyl-type epoxy resin (Nippon Kayaku Co., Ltd., NC3000, epoxide equivalent: 274, softening point: 58 DEG C): 2.55 parts by weight

Epoxy resin 2: bisphenol A-type crystalline epoxy resin (Japan Epoxy Resins Co.Ltd., YL6810, epoxide equivalent: 171, fusing point: 45 DEG C): 2.56 parts by weight

Phenolic resin 1: phenol xenyl aralkyl resin (Meiwa Plastic Industries, Ltd., MEH-7851SS, hydroxyl equivalent: 203, softening point: 65 DEG C): 4.89 parts by weight

(Ube Industries, Ltd., the HYCAR CTBN 1008-SP of hycar 1；

In general formula (3), x=0.82, y=0.18, z=62 (average value)): 0.15 parts by weight

Triphenylphosphine: 0.15 parts by weight

It melts spherical quartz (average grain diameter: 30 μm): 89.00 parts by weight

γ-glycidylpropyl trimethoxy silane: 0.20 parts by weight

Brazil wax: 0.20 parts by weight

Carbon black: 0.30 parts by weight

These components are mixed with blender.Then the mixture is mediated with double roller, the surface temperature of double roller is 90 DEG C and 45 DEG C.After cooling, the mixture of milling obtains composition epoxy resin.The composition epoxy resin is evaluated by the following method.Acquired results are shown in Table 12.

Evaluation method

Eddy flow: it is measured under conditions of as described in test example A.Picking out sample of the eddy flow less than 90cm is rejected product.

The warpage of encapsulation: it is measured under conditions of as described in test example A.The sample that warpage is 60 μm or more is substandard products.

Gold thread deformation rate: it is measured under conditions of as described in test example A.The sample that gold thread deformation rate is 3% or more is substandard products.

Soldering resistance: make as the method formed 352-pin BGA package 175 DEG C at a temperature of carry out 2 hours after curing process obtain the sample for evaluating warpage of packaging assembly.It is resulting a set of ten encapsulation, under the atmosphere that 60 DEG C of temperature, relative humidity are 60% handle 168 hours or 85 DEG C temperature, relative humidity be 60% under conditions of handle 168 hours.Later, 260 DEG C peak temperature (at 255 DEG C or or higher temperature under handle 10 seconds) under make encapsulation be subjected to IR stream process again.After processing, internal removing or the presence of crackle are observed by reflectoscope, and calculate the number of defective product of semiconductor devices.When the number of defective product of semiconductor devices is n, defect rate is expressed as n/10.

Test example a-2 to a-22

According to the composition in table 12,13 and 14, composition epoxy resin is prepared, and it is evaluated according to test example a-1.Evaluation result is shown in table in 12,13 and 14.

The following are the components other than component used in test example a-1:

Phenolic resin 2: by general formula (12) indicate phenolic resin (Tohto Kasei Co., Ltd., SN-485, softening point: 87 DEG C, hydroxyl equivalent: 210)

Phenolic resin 3: with phenylen moiety phenol aralkyl resin (Mitsui Chemicals Inc., XLC-LL, softening point: 75 DEG C, hydroxyl equivalent: 175)

Phenolic resin 4: linear phenol-aldehyde resin (softening point: 80 DEG C, hydroxyl equivalent: 105)

(Ube Industries, Ltd., the HYCAR CTBN 1300 × 13 of hycar 2；

In general formula (3), x=0.74, y=0.26, z=54 (average value)):

1,8- diazabicyclo (5,4,0) hendecene -7 (hereinafter referred to as " DBU ")

γ mercaptopropyitrimethoxy silane

Table 12

		Test example
		Test example							a-1	a-2	a-3	a-4	a-5	a-6	a-7
		Epoxy resin 1		2.55	1.80	3.31	2.03	2.53	a-1	a-2	a-3	a-4	a-5	a-6	a-7	2.63	3.02
Epoxy resin 2		Epoxy resin 1		2.55	1.80	3.31	2.03	2.53	2.56	1.79	3.31	2.03	2.53	2.63	3.02	2.63	3.02
Epoxy resin 2		Epoxy resin 3					1.01		2.56	1.79	3.31	2.03	2.53	2.63	3.02
Phenolic resin 1		Epoxy resin 3					1.01		4.89	3.44	6.35	4.93	2.47	3.32	1.98
Phenolic resin 1		Phenolic resin 2						2.47	4.89	3.44	6.35	4.93	2.47	3.32	1.98
Phenolic resin 3		Phenolic resin 2						2.47						1.42
Phenolic resin 3		Phenolic resin 4												1.42			1.98
Hycar 1		Phenolic resin 4							0.15	0.15	0.15	0.15	0.15	0.15	0.15		1.98
Hycar 1		Triphenylphosphine		0.15	0.12	0.18	0.15	0.15	0.15	0.15	0.15	0.15	0.15	0.15	0.15	0.15	0.15
Spherical fused silica		Triphenylphosphine		0.15	0.12	0.18	0.15	0.15	89.00	92.00	86.00	89.00	89.00	89.00	89.00	0.15	0.15
Spherical fused silica		γ-glycidylpropyl trimethoxy silane		0.20	0.20	0.20	0.20	0.20	89.00	92.00	86.00	89.00	89.00	89.00	89.00	0.20	0.20
Brazil wax		γ-glycidylpropyl trimethoxy silane		0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20
Brazil wax		Carbon black		0.30	0.30	0.30	0.30	0.30	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.30	0.30
Eddy flow	(cm)	Carbon black		0.30	0.30	0.30	0.30	0.30	120	95	143	100	110	120	135	0.30	0.30
Eddy flow	(cm)	The warpage of encapsulation	(μm)	40	27	55	50	40	120	95	143	100	110	120	135	50	44
Gold thread deformation rate	(%)	The warpage of encapsulation	(μm)	40	27	55	50	40	1.1	2.8	0.6	2.0	1.5	1.3	1.0	50	44
Gold thread deformation rate	(%)	Soldering resistance	After handling 168 hours under 60 DEG C/60%	0/10	0/10	0/10	0/10	0/10	1.1	2.8	0.6	2.0	1.5	1.3	1.0	0/10	0/10
After handling 168 hours under 85 DEG C/60%	0/10		After handling 168 hours under 60 DEG C/60%	0/10	0/10	0/10	0/10	0/10	0/10	0/10	1/10	0/10	0/10	0/10		0/10	0/10

Table 13

		Test example
		Test example							a-8	a-9	a-10	a-11	a-12	a-13	a-14
		Epoxy resin 1		2.57	2.52	2.55	1.47	3.75	a-8	a-9	a-10	a-11	a-12	a-13	a-14	2.55	2.55
Epoxy resin 2		Epoxy resin 1		2.57	2.52	2.55	1.47	3.75	2.56	2.51	2.56	3.42	1.60	2.56	2.56	2.55	2.55
Epoxy resin 2		Epoxy resin 3							2.56	2.51	2.56	3.42	1.60	2.56	2.56
Phenolic resin 1		Epoxy resin 3							4.92	4.82	4.89	5.11	4.65	4.89	4.89
Phenolic resin 1		Phenolic resin 2							4.92	4.82	4.89	5.11	4.65	4.89	4.89
Phenolic resin 3		Phenolic resin 2
Phenolic resin 3		Phenolic resin 4
Hycar 1		Phenolic resin 4							0.10	0.30		0.15	0.15	0.15	0.15
Hycar 1		Hycar 2				0.15			0.10	0.30		0.15	0.15	0.15	0.15
Triphenylphosphine		Hycar 2				0.15			0.15	0.15	0.15	0.15	0.15	0.15
Triphenylphosphine		DBU							0.15	0.15	0.15	0.15	0.15	0.15			0.15
Spherical fused silica		DBU							89.00	89.00	89.00	89.00	89.00	89.00	89.00		0.15
Spherical fused silica		γ-glycidylpropyl trimethoxy silane		0.20	0.20	0.20	0.20	0.20	89.00	89.00	89.00	89.00	89.00	89.00	89.00		0.20
γ mercaptopropyitrimethoxy silane		γ-glycidylpropyl trimethoxy silane		0.20	0.20	0.20	0.20	0.20						0.20			0.20
γ mercaptopropyitrimethoxy silane		Brazil wax		0.20	0.20	0.20	0.20	0.20						0.20		0.20	0.20
Carbon black		Brazil wax		0.20	0.20	0.20	0.20	0.20	0.30	0.30	0.30	0.30	0.30	0.30	0.30	0.20	0.20
Carbon black		Eddy flow	(cm)	130	98	105	150	100	0.30	0.30	0.30	0.30	0.30	0.30	0.30	125	105
The warpage of encapsulation	(μm)	Eddy flow	(cm)	130	98	105	150	100	42	50	48	52	38	45	40	125	105
The warpage of encapsulation	(μm)	Gold thread deformation rate	(%)	0.90	2.2	1.9	0.5	2.0	42	50	48	52	38	45	40	1.1	1.9
Soldering resistance	After handling 168 hours under 60 DEG C/60%	Gold thread deformation rate	(%)	0.90	2.2	1.9	0.5	2.0	0/10	0/10	0/10	0/10	0/10	0/10	0/10	1.1	1.9
	After handling 168 hours under 60 DEG C/60%	After handling 168 hours under 85 DEG C/60%	0/10	0/10	0/10	1/10	0/10	0/10	0/10	0/10	0/10	0/10	0/10	0/10	0/10	0/10

Table 14

		Test example
		Test example								a-15	a-16	a-17	a-18	a-19	a-20	a-21	a-22
		Epoxy resin 1			5.76	2.59	2.41	6.13	0.77	a-15	a-16	a-17	a-18	a-19	a-20	a-21	a-22	2.75	3.34
Epoxy resin 2		Epoxy resin 1			5.76	2.59	2.41	6.13	0.77	4.59		2.59	2.42	6.13	0.76	2.74	3.35	2.75	3.34
Epoxy resin 2		Phenolic resin 1		5.41	4.24	4.97	4.62	11.74	1.47	4.59		2.59	2.42	6.13	0.76	2.74	3.35
Phenolic resin 3		Phenolic resin 1		5.41	4.24	4.97	4.62	11.74	1.47							4.51
Phenolic resin 3		Phenolic resin 4														4.51			3.31
Hycar 1		Phenolic resin 4								0.15	0.15		0.70	0.15	0.15	0.15	0.15		3.31
Hycar 1		Triphenylphosphine		0.15	0.15	0.15	0.15	0.15	0.15	0.15	0.15		0.70	0.15	0.15	0.15	0.15	0.15	0.15
Spherical fused silica		Triphenylphosphine		0.15	0.15	0.15	0.15	0.15	0.15	89.00	89.00	89.00	89.00	75.00	96.00	89.00	89.00	0.15	0.15
Spherical fused silica		γ-glycidylpropyl trimethoxy silane		0.20	0.20	0.20	0.20	0.20	0.20	89.00	89.00	89.00	89.00	75.00	96.00	89.00	89.00	0.20	0.20
Brazil wax		γ-glycidylpropyl trimethoxy silane		0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20
Brazil wax		Carbon black		0.30	0.30	0.30	0.30	0.30	0.30	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.20	0.30	0.30
Eddy flow	(cm)	Carbon black		0.30	0.30	0.30	0.30	0.30	0.30	165	77	124	85	160	54	125	135	0.30	0.30
Eddy flow	(cm)	The warpage of encapsulation	(μm)	58	37	42	45	85	23	165	77	124	85	160	54	125	135	65	54
Gold thread deformation rate	(%)	The warpage of encapsulation	(μm)	58	37	42	45	85	23	0.3	6.4	1.5	5.5	0.5	15.0	1.5	1.9	65	54
Gold thread deformation rate	(%)	Soldering resistance	After handling 168 hours under 60 DEG C/60%	5/10	0/10	6/10	0/10	10/10	5/10	0.3	6.4	1.5	5.5	0.5	15.0	1.5	1.9	3/10	8/10
After handling 168 hours under 85 DEG C/60%	10/10		After handling 168 hours under 60 DEG C/60%	5/10	0/10	6/10	0/10	10/10	5/10	0/10	10/10	0/10	10/10	8/10	6/10	10/10		3/10	8/10

Claims

1. being used for the composition epoxy resin of packaged semiconductor comprising:

(A) crystalline epoxy resin,

(B) phenolic resin indicated by general formula (1):

2, it is used for the composition epoxy resin of packaged semiconductor as described in claim 1, wherein the phenolic resin (B) is indicated by general formula (2):

Wherein, R1 and R2 stands alone as hydrogen or alkyl with 1 to 4 carbon atoms, and two or more R1 or two or more R2 may be the same or different；A is the integer of 0-4；B is the integer of 0-4；C is the integer of 0-3；N is average value, and is the numerical value of 0-10；

Described (co) polymer or derivatives thereof (C) is epoxidized polybutadiene compound (C-1)；And

3, it is used for the composition epoxy resin of packaged semiconductor as claimed in claim 2, wherein the number-average molecular weight of the epoxidized polybutadiene compound (C-1) is 500-4000, it include two endpoint values.

4, it is used for the composition epoxy resin of packaged semiconductor as claimed in claim 2, further comprises curing accelerator (E).

5, semiconductor devices, wherein semiconductor chip is encapsulated using the composition epoxy resin for packaged semiconductor described in one of any in claim 2-4.

6, for the surface installation type composition epoxy resin of packaged semiconductor, the composition is the composition epoxy resin for packaged semiconductor described in one of any in claim 2-4, is used for package surface mounted semiconductor device,

7, surface mount type semiconductor device, wherein semiconductor chip is encapsulated by the surface installing type composition epoxy resin as claimed in claim 6 for packaged semiconductor.

8, it is used for the composition epoxy resin of packaged semiconductor as described in claim 1, wherein the phenolic resin (B) is indicated by general formula (2):

Wherein described (co) polymer or derivatives thereof (C) is hycar (C-2).

9, it is used for the composition epoxy resin of packaged semiconductor as claimed in claim 8, wherein the hycar (C-2) is the hycar of carboxy blocking, is indicated by general formula (3):

10, it is used for the composition epoxy resin of packaged semiconductor as claimed in claim 8, wherein content of the hycar (C-2) in entire composition epoxy resin is 0.05wt%-0.5wt%, including two endpoint values.

11, it is used for the composition epoxy resin of packaged semiconductor as claimed in claim 8, wherein content of the inorganic filler (D) in entire composition epoxy resin is 85wt%-95wt%, including two endpoint values.

12, it is used for the composition epoxy resin of packaged semiconductor as claimed in claim 8, further comprises curing accelerator (E).

13, semiconductor devices, wherein semiconductor chip is encapsulated as the composition epoxy resin for packaged semiconductor described in one of any in claim 8-12.

14, for the surface installation type composition epoxy resin of packaged semiconductor, the composition is the composition epoxy resin for packaged semiconductor described in one of any in claim 8-12, is used for package surface mounted semiconductor device,

15, surface mount type semiconductor device, wherein semiconductor chip is that the surface installing type composition epoxy resin as described in claim 14 for packaged semiconductor encapsulates.

16, it is used for the composition epoxy resin of packaged semiconductor as described in claim 1, wherein the crystalline epoxy resin (A) is indicated by general formula (4):

The phenolic resin (B) is indicated by general formula (5):

Further comprise the epoxy resin (F) indicated by general formula (6):

17, it is used for the composition epoxy resin of packaged semiconductor as claimed in claim 16, wherein viscosity of the polybutadiene (C-3) with intramolecular ethylene oxide structure at 25 DEG C is 20Pas-700Pas, including two endpoint values.

18, it is used for the composition epoxy resin of packaged semiconductor as claimed in claim 16, further comprises curing accelerator (E).

19, semiconductor devices, wherein semiconductor chip is encapsulated as the composition epoxy resin for packaged semiconductor described in one of any in claim 16-18.

20, for the surface installation type composition epoxy resin of packaged semiconductor, the composition is the composition epoxy resin for packaged semiconductor described in one of any in claim 16-18, is used for package surface mounted semiconductor device,

21, surface mount type semiconductor device, wherein semiconductor chip is that the surface installing type composition epoxy resin as described in claim 20 for packaged semiconductor encapsulates.

22, it is used for the composition epoxy resin of packaged semiconductor as described in claim 1, wherein the crystalline epoxy resin (A) is indicated by general formula (4):

The phenolic resin (B) is indicated by general formula (5):

Described (co) polymer or derivatives thereof (C) is epoxidized polybutadiene compound (C-1),

Content of the inorganic filler (D) in entire composition epoxy resin is 80wt%-94wt%, including two endpoint values；And

Further comprise the epoxy resin (F) indicated by general formula (6):

23, it is used for the composition epoxy resin of packaged semiconductor as claimed in claim 22, wherein the number-average molecular weight of the epoxidized polybutadiene compound (C-1) is 500-4000, including two endpoint values.

24, it is used for the composition epoxy resin of packaged semiconductor as claimed in claim 22, further comprises curing accelerator (E).

25, semiconductor devices, wherein semiconductor chip is encapsulated as the composition epoxy resin for packaged semiconductor described in one of any in claim 22-24.

26, for the surface installation type composition epoxy resin of packaged semiconductor, the composition is the composition epoxy resin for packaged semiconductor described in one of any in claim 22-24, is used for package surface mounted semiconductor device,

27, surface mount type semiconductor device, wherein semiconductor chip is that the surface installing type composition epoxy resin as described in claim 26 for packaged semiconductor encapsulates.

28, it is used for the composition epoxy resin of packaged semiconductor as described in claim 1, wherein the crystalline epoxy resin (A) is indicated by general formula (4):

The phenolic resin (B) is indicated by general formula (5):

Described (co) polymer or derivatives thereof (C) is hycar (C-2)；And

Further comprise the epoxy resin (F) indicated by general formula (6):

29, it is used for the composition epoxy resin of packaged semiconductor as claimed in claim 28, wherein the hycar (C-2) is the hycar of carboxy blocking, is indicated by general formula (3):

30, it is used for the composition epoxy resin of packaged semiconductor as claimed in claim 28, wherein content of the hycar (C-2) in entire composition epoxy resin is 0.05wt%-0.5wt%, including two endpoint values.

31, it is used for the composition epoxy resin of packaged semiconductor as claimed in claim 28, wherein the weight ratio [(F)/(A)] of the epoxy resin (F) and the crystalline epoxy resin (A) indicated by general formula (4) is 10/90 to 90/10, including two endpoint values.

32, it is used for the composition epoxy resin of packaged semiconductor as claimed in claim 28, further comprises curing accelerator (E).

33, semiconductor devices, wherein semiconductor chip is encapsulated as the composition epoxy resin for packaged semiconductor described in one of any in claim 28-32.

34, for the surface installation type composition epoxy resin of packaged semiconductor, the composition is the composition epoxy resin for packaged semiconductor described in one of any in claim 28-32, is used for package surface mounted semiconductor device,

35, surface mount type semiconductor device, wherein semiconductor chip is that the surface installing type composition epoxy resin as described in claim 34 for packaged semiconductor encapsulates.