CN101061435A - Protection of surfaces exposed to charged particles - Google Patents

Protection of surfaces exposed to charged particles Download PDF

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Publication number
CN101061435A
CN101061435A CNA2005800399152A CN200580039915A CN101061435A CN 101061435 A CN101061435 A CN 101061435A CN A2005800399152 A CNA2005800399152 A CN A2005800399152A CN 200580039915 A CN200580039915 A CN 200580039915A CN 101061435 A CN101061435 A CN 101061435A
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charged particle
source
chamber
control
carbon source
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R·B·格兰特
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BOC Group Ltd
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BOC Group Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants

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  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Toxicology (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Physical Vapour Deposition (AREA)
  • X-Ray Techniques (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

A method is described of protecting a surface of a mirror located in a chamber exposed to extreme ultra violet (EUV) radiation. The EUV radiation is generated from a plasma, which emits both EUV radiation and electrically charged particles. Organic molecules are supplied to the chamber, which interact with the EUV radiation to form a coating of carbonaceous deposits on the mirror surface. The charged particles emitted from the plasma impact the deposits, causing the deposits to be sputtered from the mirror surface. By controlling at least one of the rate of deposition of deposits on the mirror surface and the rate of removal of the deposits from the mirror surface, the thickness of the coating can be actively controlled both to prevent impact of the charged particles directly on to the mirror surface and to minimise the loss of reflectivity of the mirror surface due to the formation of the coating. The method is also suitable for protecting the surface of a window used to transmit EUV radiation from the chamber.

Description

The surface protection that contacts with charged particle
The present invention relates to protection to the surface that is exposed to highly charged particle.The present invention is particularly useful in the protection of the multilayer mirror that the optical system that is used for repeller far ultraviolet (EUV) adopts and is used for Extreme Ultraviolet passing the protection that it is transmitted to the surface of lithography.
Photoetching process is the important procedure of processing during semiconductor devices is made.Generally speaking, in photoetching process, circuit design is transferred on the wafer by pattern being imaged onto be deposited on the photoresist layer on the wafer surface.Before being transferred to wafer surface, new pattern make this wafer that various etchings and deposition process take place then.This cyclic process is proceeded and is made the sandwich construction of semiconductor devices.
In the lithographic process that is used for producing the semiconductor devices,, advantageously adopt the very short ray of wavelength so that can accurately duplicate feature very little in this device in order to reach the purpose that improves optical resolution.In the prior art, adopt the monochromatic visible light of various wavelength, and adopted the ray in deep ultraviolet (DUV) scope recently, comprised the ray of 248nm, 193nm and 157nm.In order further to improve optical resolution, also advised using the ray in extreme ultraviolet (EUV) scope, comprise the ray of 13.5nm.
Supply with the eyeglass of device among both of this instrument for lithography tool and with Extreme Ultraviolet, adopt Extreme Ultraviolet to be used for lithography and caused many new difficulties.
Problem is the rate variance that sees through that Extreme Ultraviolet is under atmospheric pressure passed majority of gas, and therefore the many machineries, electricity and the optical devices that relate to of this lithographic process must be operated in the high purity vacuum environment.Another difficult problem is the lens material that is used for projection and focuses on DUV lithography ray, and for example calcium fluoride is not suitable for the transmission of Extreme Ultraviolet, and needs usually to use reflective optical device (catoptron) to replace transmission optics device (lens).These catoptrons are formed by the alternating layer of molybdenum and silicon often, and common every layer thickness is 5-10nm, and terminates in silicon layer or ruthenium layer or other metal species usually.
Source of extreme ultraviolet radiation is held in place near the inside in the chamber the lithography tool usually.For this light source and spick-and-span lithography tool are separated, usually spectral purity filter (SPF) is passed the window that is transmitted in the lithography tool as Extreme Ultraviolet.SPF typically comprises the extremely thin paper tinsel that is normally formed by zirconium, nickel or silicon.
Source of extreme ultraviolet radiation can be based on exciting tin, lithium or xenon.For example, when in the EUV source, adopting xenon, stimulate xenon or light laser irradiation to produce the xenon plasma by static discharge.Highly charged xenon material Xe in the plasma + 10Electronic transition is to Xe + 11Produced Extreme Ultraviolet.Therefore, source of extreme ultraviolet radiation also plays highly charged particle source.These particles can impact the multi-layer mirror surface and be positioned at the SPF in chamber, cause that atom sputters from those surfaces, and this can reduce the reflectivity of this catoptron, and therefore reduces to be transmitted to the extreme ultraviolet line strength of lithography tool.When the extreme ultraviolet line strength from this chamber output reduced, this can cause and adopt Extreme Ultraviolet to carry out formed pattern quality variation on the lithographic wafer.Because the cost height of these assemblies, replace that they are always unwelcome, and this is unpractical fully in many situations.In addition, producing " hole " in SPF can cause lithography tool to be polluted.
According to an aspect of the present invention; provide a kind of protection surface to avoid owing to impacted and damaged method by charged particle; this method may further comprise the steps: during this surface is exposed to charged particle; carbon source is provided to this surface is used on this surface, forming the carbonaceous sediment coating; and control sediment rate of sedimentation and charged particle from the teeth outwards impacts at least a among this sedimental speed, with control coating thickness on one's own initiative.
By the control deposition rates of sediments with remove at least a among the speed of sediment (impacting this sediment) subsequently from the surface by charged particle, the thickness of coating can be controlled on one's own initiative about predetermined thickness or its, it both can prevent that charged particle from directly impacting on this surface also and reflectivity or transmission losses that should the surface can have been reduced to minimum (owing to forming coating).The influence of the impure background carbon in addition, providing carbon source to overwhelm carefully to be present in inevitably around the catoptron.Another benefit of this method is its high turnover rate that relates to carbonizable substance, therefore the latter is remained on chemical state reactive higher and that be easy to remove.When situation when not being such, aging its graphitization that causes of carbonaceous sediment causes the harmful and highly stable surface coating that can not be removed of optics.
The dividing potential drop of control surface place carbon source can provide a kind of mechanism of controlling rate of sedimentation.By regulating the dividing potential drop of carbon source, the coverage of carbonaceous sediment steady state (SS) can be controlled in acceptable level.By control carbon source is supplied with this surperficial speed and can control dividing potential drop easily.By employing film is thickened responsive proper sensors and monitor coating thickness (this sensor is quartz oscillator or surface acoustic wave device for example), signal can be supplied with mass flow controller, be used to regulate the speed of carbon source being supplied with the surface.
By control charged particle is supplied with the speed of coating, the may command impact speed, some charged particles that for example optionally neutralize are as by making charged particle neutralize by gas curtain before impacting sediment.In this case, the fixable dividing potential drop that carbon source is provided, it is combined with the variable pressure gas curtain can control coating thickness.Pilot-gas heavy curtain pressure can according to control carbon source dividing potential drop similar mode.Selectively nonessential, can provide buffer gas to keep the constant voltage at this near surface place.The general pressure maximum allowable value of buffer gas and carbon source potpourri depend on gaseous material to the absorption cross section of Extreme Ultraviolet and usually less than 0.1mbar.
Preferred charged particle is to send by being arranged in the source of having placed chamber that should the surface, in a preferred embodiment, the plasma that charged particle produces in the source is this chamber, it also sends electromagnetic radiation, preferred Extreme Ultraviolet, it has promoted carbonaceous sediment deposition from the teeth outwards, this be by the excitation electronic secondary from this surface emitting, it interacts with the formation carbonaceous sediment with carbon source.Many different materials can be used as plasma source, for example one of lithium, tin and xenon.
This surface can be the window surface of sending Extreme Ultraviolet from this chamber, for example paper tinsel that is normally formed by zirconium, nickel or silicon.On the other hand, this surface can be a reflecting surface, for example the multilayer mirror surface.It is invariable substantially by the thickness on these assembly surfaces is remained on, the transmissivity of this window and the reflectivity of this catoptron can be remained on constant substantially level, make the extreme ultraviolet line strength that sends from this chamber keep constant substantially thus, and provide stable source of extreme ultraviolet radiation for lithography tool thus.
Preferred carbon source is an organic molecular species source.The selection of carbon source determines by many standards, comprises the stability of the suitable cross section of going up the probability of dissociation chemisorption and speed, being activated by electronic secondary in the surface, anti-polyreaction and for the gas phase absorption cross section of Extreme Ultraviolet.Example comprises carbon monoxide, alkanes, alkynes class, olefines, aryl oxide class, aromatic compounds, nitrogen substance and halogen-containing material.
Second aspect the invention provides the method that a kind of protection is positioned at the surface in the chamber that produces Extreme Ultraviolet (EUV) and charged particle.This method may further comprise the steps: carbon source is supplied with this chamber, be used under the condition that Extreme Ultraviolet exists, on this surface, forming the carbonaceous sediment coating, impact this coating to remove sediment therefrom with charged particle, and control sediment rate of sedimentation and charged particle from the teeth outwards impacts at least a among this sedimental impact speed, coating thickness is remained on about predetermined value or its.
The third aspect; the invention provides and be used to protect the surface to avoid owing to impacted and damaged device by charged particle; this device comprises supplies with this surface with carbon source; be used for during this surface is exposed to charged particle on this surface, forming the instrument of carbonaceous sediment, and be used to control this sediment rate of sedimentation and charged particle from the teeth outwards and impact at least a device among this sedimental impact speed with this coating thickness of ACTIVE CONTROL.
Fourth aspect the invention provides the device that is used to produce Extreme Ultraviolet (EUV), and this device comprises the chamber with window, and Extreme Ultraviolet is passed this window from this chamber output; Be positioned at the Extreme Ultraviolet and the charged particle source in this chamber; Be positioned at least one reflecting surface that will focus on towards this window from the Extreme Ultraviolet in this source of being used in this chamber; Be used for carbon source is supplied with the instrument in this chamber, be used under the condition that Extreme Ultraviolet exists, on described at least one reflecting surface, forming the carbonaceous sediment coating; And be used to control at least a among this lip-deep rate of sedimentation and charged particle impact this sedimental impact speed of sediment this coating protection is held in predetermined value or the instrument about it.
Be equally applicable to the each side of device about the above feature of the inventive method each side, vice versa.
As an example, will further describe an embodiment of the invention with reference to the following drawings now, it illustrates an example that is used to produce Extreme Ultraviolet (EUV) device.This device comprises the chamber 10 of containing source of extreme ultraviolet radiation 12, and this source 12 can be discharge plasma source or lasing plasma source.In discharge plasma source, cause discharge in the medium between two electrodes, and send Extreme Ultraviolet by the plasma of this discharge generation.In lasing plasma source, convert this target to plasma by on a target, focusing on intense laser beam.The suitable medium that is used for discharge plasma source and is used for lasing plasma source target is an xenon, is the Extreme Ultraviolet of 13.5nm because the xenon plasma radiates is long.Yet, other material for example lithium and Xi Ke also to be used as target material, so the invention is not restricted to be used for producing the certain material or the mechanism of Extreme Ultraviolet.
The Extreme Ultraviolet that produces in chamber 10 is designated as 14, is supplied to another chamber 16, makes chamber 16 optics connection or is connected to chamber 10 by the one or more windows 18 that for example form in the wall in chamber 10,16.Lithography tool is equipped with in chamber 16, and this instrument emitter extreme ultraviolet wire harness is used for optionally shining photoresist on substrate (for example semiconductor wafer) surface on mask or master.For the Extreme Ultraviolet guiding window 18 that source 12 is produced, a plurality of reflectings surface that provide by multilayer mirror (MLMs) 20 have been provided in the chamber 10, MLMs 20 comprises a plurality of layers, every layer comprises: first molybdenum layer and second silicon layer from the bottom.Usually the metal level that is formed by ruthenium can form on the upper surface of each MLMs 20 to improve the inoxidizability of MLMs 20, and the while is the whole incidents of transmission Extreme Ultraviolet thereon basically.Window 18 is provided by spectral purity filter (SPF), and this optical filter comprises the extremely thin paper tinsel that is formed by zirconium, nickel or silicon usually, is used for that Extreme Ultraviolet is transmitted to chamber 16 and prevents that simultaneously pollutant from entering lithography tool chamber 16 by chamber 10.
Because Extreme Ultraviolet is passed the rate variance that sees through of majority of gas, therefore provide a kind of vacuum pump system (not shown) to be used in chamber 10,16, producing vacuum.In view of gas and the complicated diversity that may be present in the pollutant in this chamber, this pumping system can comprise: for each chamber, it comprises cryogenic vacuum pumps and discharge pump, and for example turbomolecular pump leans against backing pump.
Source of extreme ultraviolet radiation 12 also can be a charged particle source.For example, when the xenon plasma is used as the EUV source, can send Xe from this source + 10Ion, these ions can impact on the surface of the SPF 18 that is positioned at chamber 10 and MLMs 20, and cause that atom sputters from those surfaces.If allow sputter to proceed down, this can reduce the reflectivity of MLMs 20, and has therefore reduced to be transmitted to the intensity of the Extreme Ultraviolet in chamber 16, and can produce " hole " in SPF 18, causes the pollution to chamber 16.
Under the condition that Extreme Ultraviolet exists, discharge electronic secondary in the surface on SPF 18 and the MLMs 20, this electronics can with the matter interaction that has on this surface.Particularly, the hydrocarbon pollutant cracking of absorption can form the graphite mould carbon-coating that adheres on SPF 18 and the MLMs 20.For example has general formula C xH yHydrocarbon under the condition that Extreme Ultraviolet exists, divide according to following equation (1):
CxHy+e -＞C xH y-1H(a)+e -→C xH y-2+H(a)+e -→→xC+yH(a) (1)
Wherein on the surface of SPF 18 and MLMs 20 deposition (absorption) have a C that x measures.
Obviously SPF 18 and MLMs 20 lip-deep carbon-coatings are normally undesirable; Have carbon coating on the SPF18 surface and will reduce its transmissivity, MLMs 20 lip-deep carbon coatings will reduce its reflectivity simultaneously.But, at highly charged ion Xe for example + 10Under the condition that exists, on these assembly surfaces of this device, form carbon coating can be used for protecting this surface to avoid should the surface and the sputter that causes by these bombardment by ions.Given this, be used under Extreme Ultraviolet, making the carbon source of carbonaceous sediment controlled deposition on SPF 18 and MLMs 20 surfaces to be introduced chamber 10 from supply source 22.Provide a kind of carbon source to overwhelm to be present in inevitably the influence of the impure background carbon in the chamber 10 carefully.
Preferably carbon source is selected from carbon monoxide, alkynes class, olefines, aryl oxide class, aromatic compounds, nitrogen substance and halogen-containing material.The example of suitable oxide is alcohols, ester class and ethers.The example of suitable nitrogen-containing compound is amine, pyrroles and derivant thereof and pyridine and derivant thereof.The example of suitable halogen contained compound is saturated hydrogenation aryl, undersaturated hydrogenation aryl, saturated hydrogenation alkyl, undersaturated hydrogenation alkyl.In a preferred example, carbon source is acetylene (C 2H 2).
By controlling the dividing potential drop of this chamber internal carbon source, and control SPF 18 and MLMs 20 lip-deep carbon rate of sedimentation thus, can and remove in carbon deposition and reach a kind of balance between the carbonaceous sediment, this is that coating thickness keeps constant substantially thereafter owing to be subjected to the impact of 12 ions that send from the source.Utilize sensor 24 can monitor this coating thickness, this sensor thickens sensitivity to the coating on the one surface, for example be quartz oscillator or surface acoustic wave device, and be placed on key place so that it is exposed to carbon source, Extreme Ultraviolet and ion in the mode similar to MLMs 20.Sensor 24 will indicate that signal of formed coating thickness outputs to controller 26 on it, and the signal that latter's response receives outputs a control signal to mass flow controller 28, be used to control carbon source is passed the speed that inlet 30 is fed to chamber 10 from supply source 22.By changing the speed with carbon source feeding chamber 10, the dividing potential drop of control chamber 10 internal carbon sources carefully, the formation speed that makes coating on MLMs 20 and the SPF 18 thus are controlled so that this coating thickness remains on about predetermined value or its.
Go up a kind of alternative method of carbonaceous sediment formation rate controlled or method in addition as SPF 18 and MLMs 20 surfaces, the ion that this device can be configured to can control by source 12 emissions is removed this sedimental speed from these surfaces.For example, gas can be introduced the chamber 10 between source 12 and MLMs 20, to form gas curtain from a provenance wherein.For example, gas supply source 22 can be substituted by a kind of source that is used to form gas curtain.Some ions of 12 emissions and the gas this gas curtain collide and are neutralized from the source, have reduced the speed of bombardment by ions coating thus.And denseer gas curtain is undesirable, this be since gas absorption the Extreme Ultraviolet of sending from this source, however, variable, more low-density gas curtain is of value to the more constant coating thickness of maintenance.Similar with control to the delivery rate of carbon source, utilize formed coating thickness on controller 26 response sensors 24 and the signal exported, can control the gas delivery rate that forms gas curtain by mass flow controller 28.With to substitute supply source 22 with the gas source that forms gas curtain opposite, the separate gas source that can be provided for forming gas curtain at or adjacent relative with supply source 22 is used for by independent inlet gas being supplied with this chamber, and controller 26 offers mass flow controller independently forms the gas of gas curtain with control delivery rate with control signal.
In a word, at this a kind of guard method that is exposed to the mirror surface that is arranged in the chamber of Extreme Ultraviolet (EUV) has been described.This Extreme Ultraviolet is by plasma generation, plasma emission Extreme Ultraviolet and charged particle.Organic molecule is supplied with this chamber, and itself and Extreme Ultraviolet interact to form the carbonaceous sediment coating on mirror surface.Charged particle by plasma emission impacts this sediment, causes that this sediment sputters from mirror surface.Remove at least a among the sedimental speed by deposition rates of sediments on the control mirror surface with from mirror surface, on one's own initiative control coating thickness with prevent charged particle and directly impact on the mirror surface and with mirror surface owing to form reflectivity that coating causes and reduce and reduce to minimum.This method is applicable to that also protection is used for the window surface of transmission from the Extreme Ultraviolet in this chamber.

Claims (37)

1. a protection surface is avoided owing to impacted and damaged method by charged particle; this method may further comprise the steps: during this surface is exposed to this charged particle; carbon source is provided to this surface is used on this surface, forming the carbonaceous sediment coating; and at least a among this lip-deep rate of sedimentation and charged particle impact this sedimental speed of control sediment, to control this coating thickness on one's own initiative.
2. according to the method described in the claim 1, wherein control described rate of sedimentation by the dividing potential drop of controlling described surface carbon source.
3. according to the method described in the claim 2, the dividing potential drop of wherein said carbon source is to control by the speed that control is supplied with described surface with described carbon source.
4. according to the method described in claim 2 or 3, wherein monitor described coating thickness and change the dividing potential drop of described carbon source according to the variation of described coating thickness.
5. according to each described method in the aforementioned claim, wherein said carbon source is the organic molecule source.
6. according to the method described in the claim 5, wherein said carbon source is selected from carbon monoxide, alkanes, alkynes class, olefines, aryl oxide class, aromatic compounds, nitrogen substance and halogen-containing material.
7. according to the method described in the claim 6, wherein said oxide-based alcohols, ester class and the ethers of comprising.
8. according to the method described in claim 6 or 7, wherein said nitrogen-containing compound comprises amine, pyrroles and derivant thereof and pyridine and derivant thereof.
9. according to each described method among the claim 6-8, wherein said halogen contained compound comprises saturated hydrogenation aryl, undersaturated hydrogenation aryl, saturated hydrogenation alkyl, undersaturated hydrogenation alkyl.
10. according to each described method in the aforementioned claim, wherein said impact speed is to control by the speed that control is supplied with described coating with charged particle.
11. according to the method described in the claim 10, the delivery rate of wherein said charged particle is controlled by some charged particles that optionally neutralized before colliding with described sediment.
12. according to the method described in the claim 11, wherein said charged particle optionally neutralizes by making described charged particle pass a kind of gas before colliding with described sediment.
13. according to each described method of aforementioned claim, wherein said charged particle is to be launched by the charged ion source that is arranged in the chamber of placing described surface.
14. according to the method described in the claim 13, wherein said charged particle source is the plasma that produces in described chamber.
15. according to the method described in claim 13 or 14, wherein electromagnetic radiation is also produced by described charged particle source, is used to promote carbonaceous sediment in described lip-deep deposition.
16. according to the method described in the claim 15, wherein said electromagnetic radiation is the extreme ultraviolet beta radiation.
17. according to each described method among the claim 13-16, wherein said surface is to be used for from the far ultraviolet window of emitter surface, described chamber.
18. according to each described method among the claim 1-16, wherein said surface is a reflecting surface.
19. according to the method described in the claim 18, wherein said reflecting surface is the surface of multilayer mirror.
20. according to the method described in the claim 19, wherein said catoptron comprises multilayer, every layer comprises first molybdenum layer and second silicon layer.
21. a protection is positioned at the method on the surface in chamber; wherein in this chamber, produce Extreme Ultraviolet (EUV) and charged particle; this method may further comprise the steps: carbon source is supplied with this chamber be used for forming the carbonaceous sediment coating under the condition that Extreme Ultraviolet exists on this surface; impact this coating to remove sediment therefrom with charged particle; and control deposition rates of sediments and charged particle on this surface and impact at least a among this sedimental impact speed, this coating thickness is remained on about predetermined value or its.
22. be used to protect the surface to avoid owing to impacted and damaged device by charged particle; this device comprises and is used for carbon source supplied with this surface so that form the instrument of carbonaceous sediment on this surface during this surface is exposed to charged particle, and is used to control deposition rates of sediments and charged particle on this surface and impacts at least a to control the instrument of this coating thickness on one's own initiative among this sedimental impact speed.
23. according to the device described in the claim 22, wherein said control tool comprises and is used to control the instrument of described carbon source in the dividing potential drop of described surface.
24. according to the device described in the claim 23, wherein said dividing potential drop control tool comprises and is used to control the instrument of described carbon source being supplied with the speed of described reflecting surface.
25. according to the device described in claim 23 or 24, comprise that the signal that is used to monitor described coating thickness and will indicate the thickness of being monitored outputs to the instrument of branch pressure control device, described dividing potential drop control tool is configured to regulate according to the thickness of described monitoring the dividing potential drop of carbon source on the described surface.
26. according to each described device among the claim 22-25, wherein said carbon source is the organic molecule source.
27. according to the device described in the claim 26, wherein said carbon source is selected from carbon monoxide, alkanes, alkynes class, olefines, aryl oxide class, aromatic compounds, nitrogen substance and halogen-containing material.
28. according to the device described in the claim 27, wherein said oxide-based alcohols, ester class and the ethers of comprising.
29. according to the device described in claim 27 or 28, wherein said nitrogen-containing compound comprises amine, pyrroles and derivant thereof and pyridine and derivant thereof.
30. according to each described device among the claim 27-29, wherein said halogen contained compound comprises saturated hydrogenation aryl, undersaturated hydrogenation aryl, saturated hydrogenation alkyl, undersaturated hydrogenation alkyl.
31. according to each described device among the claim 22-30, wherein said surface is arranged in the chamber of placing charged particle source.
32. according to the device described in the claim 31, wherein said charged particle source is a plasma.
33. according to the device described in claim 31 or 32, wherein said charged particle source also is a kind of electromagnetic radiation source, is used to promote carbonaceous sediment in described lip-deep deposition.
34. according to the device described in the claim 33, wherein said electromagnetic radiation is the extreme ultraviolet beta radiation.
35. according to each described device among the claim 22-34, wherein said surface is the surface of multilayer mirror.
36. according to the device described in the claim 35, wherein said catoptron comprises multilayer, every layer comprises first molybdenum layer and second silicon layer.
37. be used to produce the device of Extreme Ultraviolet (EUV), this device comprises the chamber with window, Extreme Ultraviolet is passed this window from this chamber output; Be positioned at the Extreme Ultraviolet in this chamber and the source of charged particle; Be positioned at least one reflecting surface that will focus on towards this window from the Extreme Ultraviolet in this source of being used in this chamber; Be used for carbon source is supplied with the instrument in this chamber, be used under the condition that Extreme Ultraviolet exists, on described at least one reflecting surface, forming the carbonaceous sediment coating; And be used to control at least a among the rate of sedimentation on this reflecting surface and charged particle impact this sedimental impact speed of sediment this coating protection is held in predetermined value or the instrument about it.
CNA2005800399152A 2004-11-26 2005-10-11 Protection of surfaces exposed to charged particles Pending CN101061435A (en)

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GB0426036.0 2004-11-26
GBGB0426036.0A GB0426036D0 (en) 2004-11-26 2004-11-26 Protection of surfaces exposed to charged particles

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CN101061435A true CN101061435A (en) 2007-10-24

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JP (1) JP2008522399A (en)
KR (1) KR20070084558A (en)
CN (1) CN101061435A (en)
GB (1) GB0426036D0 (en)
TW (1) TW200632571A (en)
WO (1) WO2006056730A2 (en)

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