CN101057008B - 在衬底上生长Si-Ge半导体材料和器件的方法 - Google Patents

在衬底上生长Si-Ge半导体材料和器件的方法 Download PDF

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Publication number
CN101057008B
CN101057008B CN200580038437.3A CN200580038437A CN101057008B CN 101057008 B CN101057008 B CN 101057008B CN 200580038437 A CN200580038437 A CN 200580038437A CN 101057008 B CN101057008 B CN 101057008B
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sigex
epitaxial
layer
gaseous precursor
substrate
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Chinese (zh)
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CN101057008A (zh
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J·库韦塔基斯
I·S·T·宗
C·胡
J·托尔
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Arizona State University ASU
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Arizona State University ASU
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Priority claimed from PCT/US2005/012157 external-priority patent/WO2006031257A2/en
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/04—Hydrides of silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B6/00—Hydrides of metals including fully or partially hydrided metals, alloys or intermetallic compounds ; Compounds containing at least one metal-hydrogen bond, e.g. (GeH3)2S, SiH GeH; Monoborane or diborane; Addition complexes thereof
    • C01B6/06—Hydrides of aluminium, gallium, indium, thallium, germanium, tin, lead, arsenic, antimony, bismuth or polonium; Monoborane; Diborane; Addition complexes thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/058—Ge germanium

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
CN200580038437.3A 2004-09-14 2005-04-08 在衬底上生长Si-Ge半导体材料和器件的方法 Expired - Fee Related CN101057008B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US61012004P 2004-09-14 2004-09-14
US60/610,120 2004-09-14
USPCT/US04/43854 2004-12-31
PCT/US2004/043854 WO2006031240A1 (en) 2004-09-14 2004-12-31 Hydride compounds with silicon and germanium core atoms and method of synthesizing same
US66077905P 2005-03-11 2005-03-11
US60/660,779 2005-03-11
PCT/US2005/012157 WO2006031257A2 (en) 2004-09-14 2005-04-08 METHOD FOR GROWING Si-Ge SEMICONDUCTOR MATERIALS AND DEVICES ON SUBSTRATES

Publications (2)

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CN101057008A CN101057008A (zh) 2007-10-17
CN101057008B true CN101057008B (zh) 2013-07-10

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US (2) US7981392B2 (https=)
JP (2) JP4970267B2 (https=)
CN (1) CN101057008B (https=)
WO (1) WO2006031240A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11830734B2 (en) 2021-05-19 2023-11-28 Applied Materials, Inc. Thermal deposition of silicon-germanium

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8821635B2 (en) * 2004-09-14 2014-09-02 Arizona Board Of Regents On Behalf Of Arizona State University Method for growing Si-Ge semiconductor materials and devices on substrates
JP2008532294A (ja) 2005-03-11 2008-08-14 アリゾナ ボード オブ リージェンツ ア ボディー コーポレート アクティング オン ビハーフ オブ アリゾナ ステイト ユニバーシティ 新規なＧｅＳｉＳｎベースの化合物、テンプレート、及び半導体構造
KR101014066B1 (ko) 2005-11-23 2011-02-14 아리조나 보드 오브 리전트스, 아리조나주의 아리조나 주립대 대행법인 규소-게르마늄 수소화물 및 그의 제조 및 사용 방법
KR101014143B1 (ko) 2005-11-23 2011-02-14 아리조나 보드 오브 리전트스, 아리조나주의 아리조나 주립대 대행법인 규소-게르마늄 수소화물 및 그의 제조 및 사용 방법
CN101365648B (zh) * 2005-11-23 2012-09-26 亚利桑那董事会,代表亚利桑那州立大学行事的法人团体 硅锗氢化物以及制造和使用其的方法
CN101678665B (zh) * 2007-04-02 2013-07-10 代表亚利桑那州立大学行事的亚利桑那董事会 制备和使用卤代甲硅烷基锗烷的新方法
US7915104B1 (en) 2007-06-04 2011-03-29 The Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And On Behalf Of Arizona State University Methods and compositions for preparing tensile strained Ge on Ge1-ySny buffered semiconductor substrates
WO2009123926A1 (en) * 2008-04-02 2009-10-08 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Actg For & On Behalf ... Selective deposition of sige layers from single source of si-ge hydrides
KR101869246B1 (ko) * 2012-01-13 2018-07-20 엘지이노텍 주식회사 발광소자 패키지
CN107316802B (zh) * 2017-06-26 2020-04-28 南京大学 一种高锗含量锗硅薄膜的低温外延制备方法
CN109585504B (zh) * 2018-10-08 2020-12-25 惠科股份有限公司 显示面板及显示面板的制作方法
CN116924335A (zh) * 2022-04-02 2023-10-24 烟台万华电子材料有限公司 一种在液氨中反应生产乙锗烷的方法

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US4910153A (en) * 1986-02-18 1990-03-20 Solarex Corporation Deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices

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US2968427A (en) * 1955-06-28 1961-01-17 Meshberg Philip Valve for aerosol container
FR1204724A (fr) 1957-07-17 1960-01-27 Kali Chemie Ag Procédé d'obtention d'éléments très purs du quatrième groupe du système périodique
EG18056A (en) * 1986-02-18 1991-11-30 Solarex Corp Dispositif feedstock materials useful in the fabrication of hydrogenated amorphous silicon alloys for photo-voltaic devices and other semiconductor devices
US4777023A (en) * 1986-02-18 1988-10-11 Solarex Corporation Preparation of silicon and germanium hydrides containing two different group 4A atoms
JP3978490B2 (ja) * 2002-08-06 2007-09-19 独立行政法人物質・材料研究機構 シリコンゲルマニウムナノワイヤー集合体
US7594967B2 (en) 2002-08-30 2009-09-29 Amberwave Systems Corporation Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy
JP4074794B2 (ja) * 2002-08-30 2008-04-09 ソタジャパン有限会社 ゲルマニウム合金−シリカ複合体を用いた装身具
US7540920B2 (en) 2002-10-18 2009-06-02 Applied Materials, Inc. Silicon-containing layer deposition with silicon compounds
US7598513B2 (en) * 2003-06-13 2009-10-06 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University, A Corporate Body Organized Under Arizona Law SixSnyGe1-x-y and related alloy heterostructures based on Si, Ge and Sn
US8821635B2 (en) 2004-09-14 2014-09-02 Arizona Board Of Regents On Behalf Of Arizona State University Method for growing Si-Ge semiconductor materials and devices on substrates
KR101014066B1 (ko) * 2005-11-23 2011-02-14 아리조나 보드 오브 리전트스, 아리조나주의 아리조나 주립대 대행법인 규소-게르마늄 수소화물 및 그의 제조 및 사용 방법
KR101014143B1 (ko) 2005-11-23 2011-02-14 아리조나 보드 오브 리전트스, 아리조나주의 아리조나 주립대 대행법인 규소-게르마늄 수소화물 및 그의 제조 및 사용 방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4910153A (en) * 1986-02-18 1990-03-20 Solarex Corporation Deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11830734B2 (en) 2021-05-19 2023-11-28 Applied Materials, Inc. Thermal deposition of silicon-germanium

Also Published As

Publication number Publication date
US7981392B2 (en) 2011-07-19
US20070297967A1 (en) 2007-12-27
US20120020864A1 (en) 2012-01-26
JP2008513320A (ja) 2008-05-01
JP2011213594A (ja) 2011-10-27
WO2006031240A1 (en) 2006-03-23
CN101057008A (zh) 2007-10-17
JP4970267B2 (ja) 2012-07-04
US8568681B2 (en) 2013-10-29

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