CN101056714A - Device for coating the outer edge of a substarte during microelectrics manufacturing - Google Patents
Device for coating the outer edge of a substarte during microelectrics manufacturing Download PDFInfo
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- CN101056714A CN101056714A CN 200580038021 CN200580038021A CN101056714A CN 101056714 A CN101056714 A CN 101056714A CN 200580038021 CN200580038021 CN 200580038021 CN 200580038021 A CN200580038021 A CN 200580038021A CN 101056714 A CN101056714 A CN 101056714A
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- baffle plate
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- limit wall
- vertical surface
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Abstract
New baffles and methods of using these baffles are provided. The baffles comprise a body having an edge wall configured to direct the flow of a composition against a substrate (e.g., silicon wafer) edge. The edge wall comprises a vertical surface, a curved sidewall coupled to the vertical surface, and a lip coupled to the curved sidewall. A preferred baffle is annular in shape and formed from a synthetic resinous composition. Even more preferably, the baffle is not formed of a metal. The inventive methods comprise positioning the baffle adjacent a substrate during a spin coating process so that the edge wall causes the composition to cover the edges of the substrate and preferably a portion of the back side of the substrate.
Description
Related application
The application requires the priority of No. the 60/626th, 034, the U.S. Provisional Patent Application submitted on November 8th, 2004, and this application is incorporated herein by reference.
Technical field
The present invention relates to the baffle plate that is used for during the microelectronics manufacturing coating composition being guided and making towards substrate edges its covered substrate edge widely.
Background technology
Such as microelectronic components such as integrated circuit and micro machine (MEMs) device typically by applying coating on substrate and with these layers form the certain device design shape and the size form.These layers typically form by liquid component is spin-coated on the substrate, yet coating can not flow to substrate edges and covered substrate edge usually, and this just makes substrate edges not protected.These substrates experience etching and polishing subsequently.These are harsh relatively processing.As a result, coating usually can be in its edge's experience rising problem, and promptly the edge of coating is pulled away from substrate.This just makes the edge of substrate can not get protecting and impaired in treatment conditions subsequently easily.Substrate will become thinner usually and be easy to break and disconnect.This causes the reduction of wafer yield, thereby has increased cost.
Summary of the invention
The present invention overcomes these problems by the baffle plate that a kind of novelty is provided widely, and this baffle plate is used for influencing flowing of this composition and with the edge of this composition guiding substrate and make its covered substrate edge and the dorsal part of covered substrate possibly during being coated onto composition on the substrate.
More specifically, this baffle plate preferably comprises the plate body that is configured to annular, and wherein this plate body comprises qualification one opening and is configured the inner edge wall of composition conductance to substrate edges.This limit wall comprises vertical surface, the crooked sidewall that is coupled with this vertical surface and the lip limit that is coupled with this crooked sidewall.
In use, locate this baffle plate and substrate and make substrate edges close, but preferably do not contact baffle plate limit wall.Subsequently via typical spin coating proceeding, utilize centrifugal force to make to become to branch to the peripheral of substrate and flow and to this composition is coated onto on the substrate towards baffle plate thus.Baffle plate limit wall makes this composition covered substrate edge.This wafer just can bear further processing (for example, oven dry/curing, etching and further coating or the like) subsequently
Description of drawings
Fig. 1 is a schematic diagram of having described the problem that is associated with prior art processes;
Fig. 2 is the stereogram according to baffle plate of the present invention;
Fig. 3 is the cross-sectional view that the line 3-3 along the baffle plate of Fig. 2 is got;
Fig. 4 is the schematic diagram that the coating processes that utilizes baffle plate of the present invention is shown;
Fig. 5 is SEM (SEM) photo of having described the edge view of virgin silicon wafers;
Fig. 6 a shows the SEM at the edge of the silicon wafer after having applied protective material according to prior art processes;
Fig. 6 b is the enlarged drawing at the edge of Fig. 6 a;
Fig. 7 is the SEM that has described " edge of a knife " that the wafer of Fig. 6 a obtained after having experienced wet etch process;
Fig. 8 a shows the SEM at the edge of the silicon wafer after use baffle plate of the present invention has applied protective material;
Fig. 8 b is the enlarged drawing of Fig. 8 a, and it shows the edge of the protective finish on the wafer;
Fig. 9 is the SEM that has described the edge of wafer after having experienced wet etch process of Fig. 8 a;
Figure 10 shows the back side of a wafer after having applied protective material;
Figure 11 is the SEM of Figure 10 wafer after having experienced wet etch process;
Figure 12 is the enlarged drawing of the SEM of Figure 11; And
Figure 13 shows after etching and the SEM photo at the back side of the wafer of Fig. 9-12 after having removed protective finish.
The specific embodiment
Fig. 1 shows a kind of technology according to prior art.A kind of substrate 10 with edge 12 is provided.Protective material 14 is coated onto on the substrate 10 and through spin coating proceeding via distribution nozzles 16 and forms film 18.On hot plate 20, be heated and experience further processing with metacoxal plate 10.As shown in Figure 1, film 18 does not cover edge 12, then just make its subsequently such as treatment steps such as wet etchings in can not get the protection.
Baffle plate according to the present invention has overcome this problem with its novel designs.Referring to Fig. 2 and Fig. 3, provide baffle plate 22.Baffle plate 22 comprises circular base 24 and supporting member 26.Circular base 24 comprises upper surface 28 and lower surface 30 and outward flange on every side 32 and inward flange 34 respectively.Upper surface 28 is along with it slightly tilts towards surperficial 30 near edge 34.
Inward flange or limit wall 34 limit an opening 36.Edge 34 comprises vertical surface 38 and lower lip 40.Vertical surface 38 and outward flange 32 are substantially parallel to each other.Vertical surface 38 is connected by a curve or crooked sidewall 42 with lip limit 40.Should be appreciated that lower lip 40 extends beyond vertical surface 38, concentrate in crooked sidewall 42 yet this distance should be constrained to the permission composition, but still allow composition to leak lower lip 40.So, the length of " L " should be about 1.5 to 4 times of length of " l ", and more preferably about 2 to 3 times, " l " is from the innermost point of crooked sidewall 42 (promptly wherein as shown in Figure 3, the summit) to from the distance of vertical surface 38 to lower surface 30 vertically extending lines 44, and " L " is the distance of 40 the end 46 from line 44 to lower lip.
The supporting member 26 of baffle plate 22 comprises upright body 50 and flange 52, and flange 52 is preferably vertical substantially with upright body 50.In a preferred embodiment, flange 52 will comprise at least two, and preferably include at least three leveling apparatus 54.Preferred device 54 comprises the projection 56 of therefrom stretching out, and wherein each in these projections 56 all comprises opening 58, and this opening 58 is configured to hold such as dog screw (not shown) etc. with can be in the adjustable fastener of controllable register 22 when needed.Should be realized that above explanation allows specific process conditions (such as, equipment of substrate size, use etc.) is adjusted baffle dimensions, so that baffle plate of the present invention is quite general.
Further preferably baffle plate 22 is made of nonmetallic materials.That is, based on the baffle plate gross weight that is considered as 100% weight, the material that constitutes baffle plate 22 can comprise weight less than about 5% weight, preferably less than about 1% weight, more preferably is the metal of 0% weight.
Can be used in the particularly preferred material that constitutes baffle plate 22 and comprise the material of from the group that comprises polytetrafluoroethylene (PTFE) (TEFLON ), polyethylene (being preferably high density), polypropylene, polyphenylene sulfide, acetal, polyether-ether-ketone (can buy with the PEEK title) and aforesaid mixing, selecting from TangramTechnology Co., Ltd.
Fig. 4 shows the use of baffle plate 22 of the present invention.At first, substrate 10 is positioned on the chuck (not shown) in the spin-coating equipment.The example of typical substrate 10 comprises the substrate of selecting from the group that is made of silicon, silica, silicon nitride, aluminum gallium arsenide, AlGaInP, gallium nitride, GaAs, InGaP, InGaN, InGaAsP, aluminium oxide (sapphire), glass, quartz, Merlon, polyester, acrylic acid, polyurethane, paper, pottery and metal (for example, copper, aluminium, gold).
Subsequently baffle plate 22 of the present invention is placed in this equipment, so that flange 52 leans against on the surperficial (not shown) of this equipment and make the edge 12 of substrate 10 roughly near the center of the crooked sidewall 42 in the opening 36.Can pass through arrangement for adjusting height 54 (not shown among Fig. 4) controllable register 22 in case of necessity so that baffle plate 22 levels, and make substrate 10 placed in the middle just.Preferably selecting baffle dimensions to make from the innermost point of crooked sidewall 42 or summit the distance " D " of substrate edges 12 for about 0.84 to 4mm, more preferably is about distance of 0.85 to 2mm.So substrate and baffle plate just can preferably not be in contact with one another.
After appropriate positioning baffle 22 and substrate 10, rotary plate is simultaneously via distribution nozzles 16 distributed materials 14.Yet different with prior art processes is assemble in the recess that material 14 will be formed by crooked sidewall 42 in baffle plate 22, and material 14 will be directed to the substrate edges 12 or even the back side 60 shown in zone 62 among the figure.So at least a portion at the substrate edges 12 and the back side 60 will be coated with diaphragm 18, protective substrate 10 avoids etching, thinning and other infringements during subsequently the treatment step thus.More specifically, when using baffle plate of the present invention, substrate edges 12 at least about 90%, preferably at least about 95%, even the one-tenth branch that more preferably about 100% surface area will be coated onto on this substrate covers.
Example
Following example will be illustrated according to the preferred method of the present invention.Yet should be appreciated that these examples are to provide in the mode that illustrates, and should not be considered as any content in these examples the restriction to four corner of the present invention.
Example 1
Comparative example
Carrying out does not use the prior art processes of baffle plate of the present invention so that the shortcoming of this technology to be shown.
Virgin silicon wafers has level and smooth circular edge.Fig. 5 is a SEM photo of describing this edge.Etching protective film contains and uses standard spin-on technology to be coated to ProTEK subbing (primer) and ProTEK B (can buy from Brewer Science company) on the virgin silicon wafers.Fig. 6 a shows the etching protective film on the wafer.Shown in Fig. 6 b, the edge is not covered fully.The silicon wafer experience is used the wet etch process of potassium hydroxide subsequently.As shown in Figure 7, this etching process causes Waffer edge place " edge of a knife ".This etching process has caused the lifting of film, thus a little less than the protection to Waffer edge.This thin wafer edge since its can cause usually the wafer crack formation, cause breaking and the reduction of yield rate and can cause many significant treatment problems.This problem is more remarkable in LED reverse mounting type is handled.
Example 2
The use of baffle plate of the present invention
Except having used size according to the present invention to depend on the baffle plate of wafer size, repeat the technology described in example 1.During rotation, the unnecessary etching protective material of baffle collected and it is coated to the Waffer edge and the back side.As a result, the etching protective material is just by to top, edge and the bottom side of wafer, so just sealed this wafer and edge thereof and prevented the lifting of Waffer edge place film.
Fig. 8 show around and cover wafers edge and extend to the etching protective material of chip back surface.Fig. 8 b further shows the edge of edge good etching protective finish to the wafer backside.
The wafer of in position going up that has protective finish uses potassium hydroxide experience wet chemical etch process subsequently.Fig. 9 has described the wafer after the chemical etching, and the edge of this wafer is complete.
Example 3
The use of the baffle plate of the present invention that the band dorsal part distributes
Distribute with the bigger protection area that forms the wet chemical etch on the opposing wafer except the rotation ware is added dorsal part, repeat the technology described in example 2.As described in example 2, use protective material to apply this wafer.Utilize dorsal part to distribute, just can apply protective material to chip back surface from Waffer edge from Waffer edge 5mm.Figure 10 shows the coated in this example silicon wafer back side afterwards.
The wafer of this coating uses potassium hydroxide experience wet etch process subsequently.Figure 11 and 12 shows the wafer after the etching.Protective material from the coating edge lifting less than 1mm.Subsequently protective material is removed from wafer, obtained the SEM photo as shown in figure 13 of chip back surface thus.The whole outer shroud of wafer all avoids etching and is kept perfectly.
Claims (35)
1. baffle plate that flows that is used for during a composition being coated onto on the substrate with edge the described composition of influence, it is characterized in that, described baffle plate comprises the plate body with limit wall, described limit wall is configured to the movement-oriented described substrate edges with described composition, and the described limit wall of described plate body comprises:
Vertical surface;
The crooked sidewall that is coupled with described vertical surface; And
With the lip limit that described crooked sidewall is coupled, described baffle plate comprises the synthetic resin composition.
2. baffle plate as claimed in claim 1 is characterized in that, described synthetic resin composition is selected from polytetrafluoroethylene (PTFE), polyethylene, polypropylene, polyphenylene sulfide, acetal, polyether-ether-ketone and their mixture.
3. baffle plate as claimed in claim 1 is characterized in that, described lip limit has upper surface and lower surface, and described upper surface tilts towards described lower surface along the direction away from described crooked sidewall.
4. baffle plate as claimed in claim 3 is characterized in that, described inclination is to be about 1 to 15 ° inclination with the upright position.
5. baffle plate as claimed in claim 1 is characterized in that, is 100 weight % in the gross weight of described baffle plate, and described baffle plate comprises the metal less than about 5 weight %.
6. baffle plate as claimed in claim 1 is characterized in that:
Described crooked sidewall has the summit, and described sidewall has thickness " l ", and described thickness " l " is defined as from described summit to the distance the line segment of getting along the plane identical with described vertical surface; And
Described lip limit is extended away from described summit and is had an end, described lip limit has length " L ", described length " L " is defined as from the described line segment got along described vertical surface plane to the distance the described lip edge tail, and wherein said length " L " is about 1.5 to 4 times of described length " l ".
7. baffle plate as claimed in claim 1 is characterized in that, described plate body and described limit wall are annular.
8. baffle plate that flows that is used for during a composition being coated onto on the substrate with edge the described composition of influence, it is characterized in that, described baffle plate comprises the plate body with limit wall, described limit wall is configured to the movement-oriented described substrate edges with described composition, and the described limit wall of described plate body comprises:
Vertical surface;
The crooked sidewall that is coupled with described vertical surface; And
The lip limit that is coupled with described crooked sidewall is 100 weight % in the gross weight of described baffle plate, and described baffle plate contains the metal less than about 5 weight %.
9. baffle plate as claimed in claim 8 is characterized in that, is 100 weight % in the gross weight of described baffle plate, and described baffle plate contains the metal of the 0 weight % that has an appointment.
10. baffle plate as claimed in claim 8 is characterized in that, described lip limit has upper surface and lower surface, and described upper surface tilts towards described lower surface along the direction away from described crooked sidewall.
11. baffle plate as claimed in claim 10 is characterized in that, described inclination is to be about 1 to 15 ° inclination with the upright position.
12. baffle plate as claimed in claim 8 is characterized in that:
Described crooked sidewall has the summit, and described sidewall has thickness " l ", and described thickness " l " is defined as from described summit to the distance the line segment of getting along the plane identical with described vertical surface; And
Described lip limit is extended away from described summit and is had an end, described lip limit has length " L ", described length " L " is defined as from the described line segment got along described vertical surface plane to the distance the described lip edge tail, and wherein said length " L " is about 1.5 to 4 times of described length " l ".
13. baffle plate as claimed in claim 8 is characterized in that, described plate body and described limit wall are annular.
14. baffle plate that flows that is used for the described composition of influence during a composition being coated onto on the substrate with edge, it is characterized in that, described baffle plate comprises the plate body with limit wall, and described limit wall is configured to the movement-oriented described substrate edges with described composition, and the limit wall of described plate body comprises:
Vertical surface;
Be coupled with described vertical surface and have the crooked sidewall on summit, described sidewall has thickness " l ", and described thickness " l " is defined as from described summit to the distance the line segment of getting along the plane identical with described vertical surface; And
Be coupled, extend away from described summit with described crooked sidewall and have the lip limit of an end, described lip limit has length " L ", described length " L " is defined as from the described line segment got along described vertical surface plane to the distance the described lip edge tail, and wherein said length " L " is about 1.5 to 4 times of described length " l ".
15. baffle plate as claimed in claim 14 is characterized in that, described lip limit has upper surface and lower surface, and described upper surface tilts towards described lower surface along the direction away from described crooked sidewall.
16. baffle plate as claimed in claim 15 is characterized in that, described inclination is to be about 1 to 15 ° inclination with the upright position.
17. baffle plate as claimed in claim 14 is characterized in that, described plate body and described limit wall are annular.
18. one kind comprises the plate body with edge, the baffle plate that flows that is used for the described composition of influence during being coated onto a composition on the substrate, it is characterized in that, described plate body comprises an outer rim, and described outer rim comprises a leveling apparatus in order to change the position of described baffle plate with respect to described substrate.
19. baffle plate as claimed in claim 18 is characterized in that, described outer rim comprises from the extended flange of described plate body, and described leveling apparatus comprises the projection that is coupled to described flange.
20. baffle plate as claimed in claim 19 is characterized in that, described projection comprises the structure that limits an opening, and described opening is configured to hold an adjustable fastener.
21. a composition comprises:
Comprise the baffle plate of the plate body with limit wall, it comprises:
Vertical surface;
The crooked sidewall that is coupled with described vertical surface; And
The lip limit that is coupled with described crooked sidewall; And
Be set near described crooked sidewall but not with the contacted substrate of described baffle plate.
22. composition as claimed in claim 21 is characterized in that, described plate body and described limit wall are annular.
23. composition as claimed in claim 22 is characterized in that, described limit wall limits an opening, and described substrate is arranged in the described opening.
24. composition as claimed in claim 21 is characterized in that, described baffle plate comprises the synthetic resin composition.
25. composition as claimed in claim 21 is characterized in that, described substrate is a microelectronic substrate.
26. composition as claimed in claim 25, it is characterized in that described substrate is selected from silicon, silica, silicon nitride, aluminum gallium arsenide, AlGaInP, gallium nitride, GaAs, InGaP, InGaN, InGaAsP, aluminium oxide, glass, quartz, Merlon, polyester, acrylic acid, polyurethane, paper, pottery and metal substrate.
27. one kind is coated onto method on the substrate with a composition, described method comprises the steps:
Provide:
The baffle plate that comprises plate body with limit wall; And
Substrate with surface and edge;
Described baffle plate and substrate are set makes described substrate near described limit wall;
One composition is coated onto described substrate surface, and described limit wall makes described composition also contact with described substrate edges.
28. method as claimed in claim 27 is characterized in that, described limit wall comprises:
Vertical surface;
The crooked sidewall that is coupled with described vertical surface; And
With the lip limit that described crooked sidewall is coupled, the described step that is provided with comprises and described substrate is set and baffle plate makes described substrate adjacent with described crooked sidewall.
29. method as claimed in claim 28 is characterized in that, described composition contacts described crooked sidewall in described contact procedure, and described crooked sidewall makes described composition contact described substrate edges.
30. method as claimed in claim 27 is characterized in that, the described step that is provided with causes described substrate adjacent with described limit wall but do not contact with described baffle plate.
31. method as claimed in claim 27 is characterized in that, described plate body and described limit wall are annular.
32. method as claimed in claim 27 is characterized in that, described limit wall limits an opening, and described substrate is set in the step in the described opening described the setting.
33. method as claimed in claim 27 is characterized in that, described baffle plate comprises the synthetic resin composition.
34. method as claimed in claim 27 is characterized in that, described substrate is a microelectronic substrate.
35. method as claimed in claim 34, it is characterized in that described substrate is selected from silicon, silica, silicon nitride, aluminum gallium arsenide, AlGaInP, gallium nitride, GaAs, InGaP, InGaN, InGaAsP, aluminium oxide, glass, quartz, Merlon, polyester, acrylic acid, polyurethane, paper, pottery and metal substrate.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US62603404P | 2004-11-08 | 2004-11-08 | |
| US60/626,034 | 2004-11-08 | ||
| US11/268,196 | 2005-11-07 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101056714A true CN101056714A (en) | 2007-10-17 |
| CN100551548C CN100551548C (en) | 2009-10-21 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005800380211A Expired - Fee Related CN100551548C (en) | 2004-11-08 | 2005-11-07 | Baffle plate comprises the composition of baffle plate, and a composition is coated onto method on the substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100551548C (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103521395A (en) * | 2013-10-28 | 2014-01-22 | 合肥京东方光电科技有限公司 | Coating apparatus |
| CN107850831A (en) * | 2015-07-17 | 2018-03-27 | Asml荷兰有限公司 | Method for manufacturing diaphragm assembly |
| US11971656B2 (en) | 2015-07-17 | 2024-04-30 | Asml Netherlands B.V. | Method for manufacturing a membrane assembly |
-
2005
- 2005-11-07 CN CNB2005800380211A patent/CN100551548C/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103521395A (en) * | 2013-10-28 | 2014-01-22 | 合肥京东方光电科技有限公司 | Coating apparatus |
| CN103521395B (en) * | 2013-10-28 | 2016-02-03 | 合肥京东方光电科技有限公司 | A kind of coating unit |
| CN107850831A (en) * | 2015-07-17 | 2018-03-27 | Asml荷兰有限公司 | Method for manufacturing diaphragm assembly |
| US11061320B2 (en) | 2015-07-17 | 2021-07-13 | Asml Netherlands B.V. | Method for manufacturing a membrane assembly |
| US11624980B2 (en) | 2015-07-17 | 2023-04-11 | Asml Netherlands B.V | Method for manufacturing a membrane assembly |
| US11971656B2 (en) | 2015-07-17 | 2024-04-30 | Asml Netherlands B.V. | Method for manufacturing a membrane assembly |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100551548C (en) | 2009-10-21 |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20171106 Address after: American Missouri Patentee after: Hi Hui Equipment Co., Ltd. Address before: American Missouri Patentee before: Brewer Science Inc. |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091021 Termination date: 20201107 |