CN101055706A - Display apparatus - Google Patents
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- CN101055706A CN101055706A CNA2007100960203A CN200710096020A CN101055706A CN 101055706 A CN101055706 A CN 101055706A CN A2007100960203 A CNA2007100960203 A CN A2007100960203A CN 200710096020 A CN200710096020 A CN 200710096020A CN 101055706 A CN101055706 A CN 101055706A
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- 239000004065 semiconductor Substances 0.000 description 25
- 238000010586 diagram Methods 0.000 description 23
- 239000000758 substrate Substances 0.000 description 15
- 239000004973 liquid crystal related substance Substances 0.000 description 7
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- 239000003990 capacitor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
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- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3648—Control of matrices with row and column drivers using an active matrix
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0404—Matrix technologies
- G09G2300/0417—Special arrangements specific to the use of low carrier mobility technology
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0833—Several active elements per pixel in active matrix panels forming a linear amplifier or follower
- G09G2300/0838—Several active elements per pixel in active matrix panels forming a linear amplifier or follower with level shifting
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0871—Several active elements per pixel in active matrix panels with level shifting
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Theoretical Computer Science (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Thin Film Transistor (AREA)
- Shift Register Type Memory (AREA)
- Liquid Crystal Display Device Control (AREA)
Abstract
A display apparatus includes a switching element having a first gate electrode, a source and drain electrode, a channel area formed between the source and drain electrode, and a second gate electrode. The second gate electrode is electrically insulated from the first gate electrode through the channel area, and different control voltages are applied to the second gate electrode according to the control period of the first gate electrode. The different control voltages are applied to the second gate electrode according to the turn on/off states of the switching element for increasing the turn on current in the channel area and for minimizing the turn off (leakage) current in the channel area.
Description
Technical field
The present invention relates to a kind of display device that comprises with the driving element that strengthens electrical characteristics.
Background technology
Usually, panel display apparatus comprises liquid crystal display LCD plate, gate drive circuit and data drive circuit.LCD panel comprises array substrate (substrate), color filter substrate and liquid crystal layer.Array substrate comprises many gate lines, many data lines, a plurality of on-off element and is electrically connected to a plurality of pixels of each on-off element.Color filter substrate is relative with array substrate.Liquid crystal layer is arranged between array substrate and the color filter substrate.Gate drive circuit applies gate-control signal for the gate line.Data drive circuit applies data-signal to data line.Particularly, comprise that the gate drive circuit of a plurality of on-off elements can directly form in the external zones of array substrate, thereby reduce LCD device size.Therefore, the LCD device all has on-off element in pixel region and external zones.When the TFT on-off element has amorphous silicon semiconductor layer, because signal delay or decay might appear in line resistance.The conducting electric current of this TFT is less than the conducting electric current of the TFT with single or multiple crystal silicon semiconductor layers.The channel length that the trial that addresses these problems has been taked to widen the channel width of semiconductor layer or reduced semiconductor layer.Because the conducting electric current and by the time the leakage current both increase, so this design has limited effectiveness.
Summary of the invention
The invention provides a kind of display device with the driving element that strengthens electrical feature that comprises, wherein the electrical characteristics of Zeng Qianging are conducting electric current and the minimized cut-off currents that increases.In example display device according to the present invention, this display device comprises first grid electrode, source electrode, drain electrode, the channel region that forms and second gate electrode of isolating from first grid electrode electricity by this channel region between source electrode and drain electrode.According to the control time section of the first grid electrode difference is controlled voltage and be applied to second gate electrode.
In addition, second gate electrode can comprise transparent conductive material, and this transparent conductive material can comprise ITO or IZO.In addition, channel region can comprise amorphous silicon layer.
According to example embodiment of the present invention, when forward voltage is applied to first grid electrode, will have with the forward voltage opposite polarity first control voltage be applied to second gate electrode.When cut-off voltage was applied to first grid electrode, second gate electrode was electrically connected to floating electrode.
According to another example embodiment of the present invention, when forward voltage is applied to first grid electrode, to have with the forward voltage opposite polarity first control voltage be applied to second gate electrode, and when cut-off voltage was applied to first grid electrode, the second control voltage that will have ground voltage was applied to second gate electrode.
According to another example embodiment of the present invention, forward voltage is applied to first grid electrode during, to have with the forward voltage identical polar first control voltage be applied to second gate electrode, and cut-off voltage is applied to first grid electrode during, second gate electrode can be electrically connected to floating electrode.
According to an example embodiment more of the present invention, forward voltage is applied to first grid electrode during, to have with the forward voltage identical polar first control voltage be applied to second gate electrode, and cut-off voltage is applied to first grid electrode during, can with have ground voltage second control voltage be applied to second gate electrode.
In example display device according to the present invention, display device comprises: pull-up circuit is used for drawing the time period to export first output voltage last; Pull-down circuit is used for exporting second output voltage in the drop-down time period; Lead-out terminal is electrically connected to pull-up circuit and pull-down circuit, is used for first output voltage and second output voltage are sent to the viewing area; And current control circuit, be used for the electric current that draws time period and control of drop-down time period pull-up circuit last.Display device can comprise having the driving circuit that comprises the run duration section of drawing time period and drop-down time period.
Pull-up circuit can comprise the source electrode that is electrically connected to first voltage source, the drain electrode that is electrically connected to lead-out terminal, the channel region that forms between source electrode and the drain electrode, be used for by on draw the signal controlling raceway groove current status first grid electrode and isolate and be electrically connected to second gate electrode of current control circuit from first grid electrode electricity by channel region.
In addition, second gate electrode can comprise transparent conductive material, and in claim 12, transparent conductive material can comprise ITO or IZO.
Channel region can comprise amorphous silicon layer.
Current control circuit can be applied to second gate electrode with the first control voltage last draw in the time period, and the second control voltage that will be different from the first control voltage in the drop-down time period is applied to second gate electrode.
In addition, current control circuit can comprise that first control voltage source, second control voltage source and control voltage source select circuit, and this control voltage source selects circuit to be chosen in electrical connection between in second gate electrode and first and second control voltage source one according to the run duration section.
In addition, control voltage source select circuit by on draw signal conduction, by the first on-off element conducting of electrical connection first voltage source and second gate electrode and pulldown signal in conducting state, and can be included in the second switch element that is electrically connected second control voltage source and second gate electrode in the conducting state.
In addition, first on-off element can comprise the source electrode that is electrically connected to first control voltage source, be electrically connected to the drain electrode of second gate electrode and comprise with on draw the first film transistor of the gate electrode that signal is applied to.The second switch element can comprise the source electrode that is electrically connected to second control voltage source, be electrically connected to the drain electrode of second gate electrode and comprise second thin film transistor (TFT) of the gate electrode that pulldown signal is applied to.
First control voltage source can provide have with on draw the voltage or can provide of the forward voltage opposite polarity of signal have with on draw the voltage of the forward voltage identical polar of signal.
In addition, pull-down circuit can comprise thin film transistor (TFT), this thin film transistor (TFT) has the source electrode that is electrically connected to second output voltage source, the drain electrode that is electrically connected to lead-out terminal, the channel region that forms and controls the current status of raceway groove by pull-down current between source electrode and drain electrode gate electrode.
In above-mentioned example embodiment, pulldown signal can have with on draw the opposite polarity of signal.
In addition, second control voltage source can provide ground voltage or can be floating electrode.
In addition, first output voltage source can produce have than on draw the time period clock of short time period, in this case, this clock can draw the high signal of output in the time period last.In this example embodiment, first output voltage can be the high signal in the clock, and can be connected to the gate line that forms on the viewing area.
Description of drawings
Above-mentioned and other attribute of the present invention and advantage will become more obvious from reading to describe below in conjunction with the accompanying drawings, in the accompanying drawings:
Fig. 1 is the block scheme of diagram according to the liquid crystal indicator of example embodiment of the present invention;
Fig. 2 is the block scheme of diagram according to on-off element of the present invention and circuit control section;
Fig. 3 is that diagram is according to the block scheme with drive part of a current-controlled voltage source of the present invention;
Fig. 4 is the circuit diagram of diagram according to the drive part of first example embodiment;
Fig. 5 is that diagram is according to the pixel switch element of first example embodiment and the circuit diagram of current control circuit;
Fig. 6 is that diagram is according to the circuit diagram with drive part of two current-controlled voltage sources of the present invention;
Fig. 7 is the circuit diagram of diagram according to the drive part of second example embodiment;
Fig. 8 is the sequential chart of the input and output signal of the driving element among Fig. 5;
Fig. 9 is that diagram is according to the pixel switch element of second example embodiment and the circuit diagram of current control circuit;
Figure 10 is the circuit diagram according to the block scheme among enforcement Fig. 2 of the present invention;
Figure 11 is the sequential chart of the input and output signal of the driving element among diagram Figure 10;
Figure 12 is the plan view of the layout of the drive part in the pictorial image 6;
Figure 13 is the sectional view of the line X-X ' of the driving circuit in Figure 12; And
Figure 14 A is the front elevation that roughly illustrates according to the drive principle of the pull-up circuit of example embodiment of the present invention to 14C.
Embodiment
After this, will at length explain the present invention with reference to the accompanying drawings.Fig. 1 is the block scheme of diagram according to the liquid crystal indicator of example embodiment of the present invention.
With reference to figure 1, according to example embodiment, display device comprises LCD display board 300, have the driving element of a driving element 400 and data-driven element 500, be electrically connected to data-driven element 500 grayscale voltage generating portion (gray scale voltage generating part) 800, be used for the signal controlling part 600 of control gate driving element 400 and data-driven element 500.LCD plate 300 comprises the pixel region with a plurality of pixels that is used for display image and the non-display area except that pixel region.
On-off element Q is the element with three terminals, such as the TFT that is arranged in down in the substrate.The control terminal of on-off element is electrically connected to gate line GL, and the input terminal of on-off element is electrically connected to data line DL, and the lead-out terminal of on-off element is electrically connected to liquid crystal capacitor Clc and fixed condenser Cst.With reference to figure 1, on-off element Q is connected to the different pieces of information line D1～Dm with the neighbor PX of delegation in proper order.
Grayscale voltage generating portion 800 produces a pair of gray scale voltage group (or benchmark gray scale voltage group) relevant with the transmissivity of pixel PX.First group has positive voltage with respect to utility voltage Vcom, and second group has negative voltage.
The driving element of signal controlling part 600 control such as door driving element 400, data-driven elements 500 etc.
Each driving element 400,500,600 and 800 can be directly installed on the non-display area of LCD plate 300 as at least one integrated circuit (IC) chip (COG).Selectively, each driving element 400,500,600 and 800 can be installed on the flexible printed circuit film (not shown) that is attached on the LCD plate 300 as thin-film package (tape carrier package) (TCP).Selectively, each driving element 400,500,600 and 800 can be installed on another printed circuit board (PCB) (not shown).Selectively, these driving elements 400,500,600 and 800 can be integrated in the LCD board component 300 with signal wire G1～Gn, D1～Dm, TFT on-off element Q etc.In addition, driving element 400,500,600 and 800 can be integrated in the single chip.
Fig. 2 is the block scheme of diagram according to on-off element of the present invention and Current Control part.
Fig. 3 is that diagram is according to the block scheme with drive part of current-controlled voltage source of the present invention.The door driving element comprises pull-up circuit 410, Current Control part and pull-down circuit 420.When will on when drawing signal to be applied to pull-up circuit 410 as first switching signal, pull-up circuit 410 operations.When will on draw signal to be applied to the current control division timesharing, Current Control is partly operated, thus Current Control part is applied to pull-up circuit with current controlled voltage.When pulldown signal is applied to pull-down circuit 420, pull-down circuit 420 operations.Pulldown signal is the second switch signal with the phase place that is different from the phase place of drawing signal.
Each is connected respectively to the sub-Vout of public output of two input terminal V1, Vup, V2, Vdown and output drive control voltage pull-up circuit 410 and pull-down circuit 420.
Pull-up circuit 410 is electrically connected to and draws signal input terminal Vup, pull-down circuit 420 to be electrically connected to pulldown signal input terminal Vdown.From the switch motion of drawing signal controlling pull-up circuit 410 of drawing signal input terminal Vup to apply.The switch motion of the pulldown signal control pull-down circuit 420 that applies from pulldown signal input terminal Vdown.Each input terminal V1 of pull-up circuit 410 and pull-down circuit 420 and V2 are electrically connected to first signal source and the secondary signal source that differs from one another.
By on draw the ON time section that signal Vup determines during, pull-up circuit 410 will output to output terminal Vout from the signal of the sub-V1 of first input end.Then, pull-up circuit 410 be used to from by on draw the signal of the Current Control part that signal drives to control P-channel circuit.Driving voltage on the output terminal Vout drives the gate pole of display board.During the ON time section of pulldown signal Vdown, pull-down circuit 420 will appear on the input terminal V2, be applied to output terminal Vout from the signal in secondary signal source.According to example embodiment, the voltage source of clocking can be used as first signal source, can be with the dc voltage source as the secondary signal source.
According to example embodiment, on draw signal and pulldown signal to have such as 180 ° differ.In example embodiment, when on draw with pulldown signal in one when being conduction level, another the time cut-off level.When pull-up circuit 410 by on when drawing signal conduction, circuit 410 outputs to output terminal Vout with first signal source voltage.At this moment, pull-down circuit 420 ends and inoperation by pulldown signal.When pull-down circuit 420 passed through the pulldown signal conducting, circuit 420 outputed to output terminal Vout with the secondary signal source.At this moment, pull-up circuit 410 not by on draw signal operation.For example, when pull-up circuit 410 outputs to lead-out terminal with first signal source voltage, pull-down circuit 420 inoperation and therefore inoperative to the output of output terminal Vout.On the contrary, when pull-down circuit 420 outputs to output terminal Vout with secondary signal source voltage, pull-up circuit 410 inoperation and therefore inoperative to the output of output terminal Vout.
According to example embodiment, the door driving element of display device can comprise TFT.With reference to figure 4, with a plurality of elements of following detailed explanation according to the door driving element that comprises a plurality of TFT of this example embodiment.
Pull-up circuit comprise have the source electrode, the TFT 1100 of drain electrode, channel region, first grid electrode and second gate electrode 1110.The source electrode is electrically connected to the sub-V1 of first input end.Drain electrode is electrically connected to output terminal Vout.Channel region is formed between source electrode and the drain electrode.First grid electrode is electrically connected to and draws signal input terminal Vup, is used to control the current status of channel region, wherein first control voltage be applied to draw on this signal input terminal Vup as on draw signal.Second gate electrode 1110 is isolated from first grid electrode electricity by channel region, and according to the running time section of the first control voltage, the second different control voltage is applied to second gate electrode 1110.On draw the channel region of TFT 1100 to comprise semiconductor layer, and can preferably include the semiconductor layer identical with the on-off element Q of pixel region.In this case, when the on-off element Q of pixel region is polycrystal semiconductor layer, on draw TFT 1100 also to comprise channel region with polycrystal semiconductor layer.
When the on-off element Q of pixel region comprises amorphous silicon semiconductor layer, on draw TFT 1100 also to comprise channel region with polycrystal semiconductor layer.Yet, on draw the formation technology of the semiconductor layer in the channel region of TFT 1100 may be different from the formation technology of semiconductor layer of the on-off element Q of pixel region, therefore, the crystallization state of the semiconductor layer between channel region and the on-off element Q may differ from one another.
Pull-down circuit comprises the TFT1200 that has source electrode, drain electrode, gate electrode and channel region more than.The source electrode is electrically connected to the second lead-out terminal V2.Drain electrode is electrically connected to the output terminal Vout as the drain electrode of pull-up circuit.Gate electrode is electrically connected to pulldown signal input terminal Vdown.The 3rd control signal is applied to pulldown signal input terminal Vdown.The 3rd control signal is the pulldown signal with phase place different with the first control voltage that is applied to first grid electrode.Channel region is formed between source electrode and the drain electrode.The channel region of drop-down TFT 1200 comprises semiconductor layer, among the drop-down TFT 1200 the formation technology of semiconductor layer and crystallization state with top about on draw identical that TFT 1100 explains.
The current control division branch comprises at least one on-off element.On-off element can comprise TFT.According to example embodiment, the gauge tap element comprise have gate electrode, the TFT of source electrode and channel region.Gate electrode be electrically connected to first control voltage be applied on draw signal input terminal Vup, be used for to operate with the first grid electrode identical operations time period.The source electrode is electrically connected to Current Control terminal Vcon1, and current controling signal is applied to the source electrode.Channel region is formed between drain electrode and the source electrode.The drain electrode of Current Control TFT 1300 is electrically connected to second gate electrode 1110 that draws TFT 1100.Since on draw signal Vup to be applied to the gate electrode of Current Control TFT 1300, so the running time section of TFT 1300 with on draw the running time section of TFT1100 identical.
Explained the door driving element in the example embodiment in the above, but according to driving element of the present invention, this driving element can comprise that not only a driving element can also comprise the pixel drive elements of data-driven element, display board etc.
For example, when the on-off element Q of pixel region comprised second gate electrode, example embodiment can be used to control the voltage of second gate electrode.
With reference to figure 5, TFT 1100 is corresponding to the on-off element Q of pixel region, and first signal is corresponding to the data voltage that applies by data line.The drain electrode of TFT 1100 is electrically connected to pixel electrode.The gate-control signal that applies by the gate line is used as first switching signal, is applied to TFT 1100 by on-off element 1300 to current controling signal Vcon1 time period property, is used for Control current.In this case, Current Control part 430 forms in the external zones of display board.
Fig. 6 is that diagram is according to the block scheme with drive part of two current-controlled voltage sources of the present invention.
With reference to figure 6, the following block scheme of separating the Buddhism driving element according to another example embodiment.
Pull-up circuit 410 is identical with a last example embodiment with pull-down circuit 420.Current Control part 430 is electrically connected to Current Control terminal Vcon1 and the Vcon2 that current controling signal is applied to.On draw signal to be applied to input terminal Vup place, pulldown signal is applied to input terminal Vdown place.Current Control part 430 is connected to pull-up circuit 410.When Current Control part 430 by on draw signal Vup or when the pulldown signal Vdown conducting, it will be applied to pull-up circuit 410 from first and second current controling signals of the first and second Current Control terminal Vcon1 and Vcon2 respectively.By this way, Current Control part 430 control pull-up circuits 410 are applied to the output current of output terminal Vout.
Fig. 7 is the circuit diagram of diagram drive part of second example embodiment according to the present invention.
With reference to figure 7, will comprise that according to example embodiment the door driving element of TFT is described below.The form of this pull-up circuit and pull-down circuit is identical with illustrated example embodiment among Fig. 4.Preferably, the current control division branch comprises two or more gauge tap elements, and on-off element can comprise TFT.The first Current Control TFT comprise have gate electrode, the TFT 1300 of source electrode, drain electrode and channel region.Gate electrode be electrically connected to first control voltage be applied on draw signal input terminal Vup, be used for to operate with the first grid electrode identical operations time period.The source electrode is electrically connected to the first Current Control terminal Vcon1 that first current controling signal is applied to.Drain electrode is electrically connected to second gate electrode that draws TFT, is used to export first current controling signal.Channel region is formed between source electrode and the drain electrode.
The second Current Control TFT can comprise have gate electrode, the TFT1400 of source electrode, drain electrode and channel region.Gate electrode be electrically connected to pulldown signal as the second switch signal be applied to pulldown signal input terminal Vdown, be used for to operate with the gate electrode identical operations time period of drop-down TFT.The source electrode is electrically connected to the second Current Control terminal Vcon2, and second current controling signal is applied to the second Current Control terminal Vcon2.Drain electrode is electrically connected to second gate electrode that draws TFT, is used to export second current controling signal.Channel region is formed between source electrode and the drain electrode.
When the raceway groove conducting of the TFT in the Current Control part, first current controling signal is applied to second gate electrode via the first Current Control terminal Vcon1, to increase channel current.When the channel cutoff of the TFT in the Current Control part, second current controling signal is applied to second gate electrode via the second Current Control terminal Vcon2, to minimize channel current (Leakage Current).
To explain about as follows according to the principle and the test findings of second gate electrode control channel current.The drain electrode of the first Current Control TFT 1300 and the second Current Control TFT 1400 is common node N, and is electrically connected to second gate electrode that draws TFT 1100.On draw signal to be applied to the gate electrode of the first Current Control TFT1300, pulldown signal is applied to the gate electrode of the second Current Control TFT 1400.Therefore, the running time section of the first Current Control TFT 1300 with on draw the running time section of TFT 1100 identical, the running time section of the second Current Control TFT 1400 is identical with the running time section of drop-down TFT 1200.
According to example embodiment, the voltage source of clocking can be used as first signal source, and the dc voltage source can be used as the secondary signal source.In addition, the secondary signal source can be electrically connected to the second Current Control terminal Vcon2 and can be used as second current controling signal.
In example embodiment, explained exemplary door driver element.Yet driver element of the present invention is not limited to a driver element, and can be used for pixel drive unit of data-driven unit, display board etc.
For example, when the on-off element Q of pixel region comprised second gate electrode, example embodiment can be used to control the voltage of second gate electrode.With reference to figure 9, TFT 1100 is corresponding to the on-off element Q of pixel region, and first signal is corresponding to the data voltage that applies by data line, and the drain electrode of TFT 1100 is electrically connected to pixel electrode.The gate-control signal that applies by the gate line is used as first switching signal.Has the signal of opposite phase as the second switch signal with gate-control signal.In this case, Current Control part 430 forms in external zones.
According to example embodiment, will explain the operation of driving element in detail with reference to figure 6 to 8 with four TFT with n type semiconductor layer.
According to example embodiment, all TFT 1100,1200,1300 and 1400 can utilize n type semiconductor layer to form, therefore by the positive voltage conducting.On draw signal Vup to have opposite phases with pulldown signal Vdown.For example, when on when drawing signal Vup to be cut-off level, pulldown signal Vdown is conduction level (after this, being called as the drop-down time period), and when on when drawing signal Vup to be conduction level, cut-off level during pulldown signal Vdown (after this, be called as draw the time period).
When a TFT 1300 and on draw TFT 1100 last draw in the time period by on when drawing signal conduction, clock signal is applied to drain electrode, and clock signal is exported by output terminal Vout.In this case, clock signal is first signal source that is applied to the source electrode that draws TFT 1100 by the sub-V1 of first input end.Because drop-down TFT 1200 draws remain off state in the time period last, so voltage signal is not exported by output terminal Vout.In this case, voltage signal is the secondary signal source that is applied to the second input terminal V2.Owing to draw last that a TFT 1300 is conducting states in the time period, be applied to second gate electrode 1110 that draws TFT 1100 so be applied to the first control voltage of the first Current Control terminal Vcon1 via source electrode and the drain electrode of a TFT 1300, thereby the first control voltage draws the source electrode of TFT1100 and the electric current of drain electrode on increasing.
Selectively, according to example embodiment, because the 2nd TFT 1400 is a cut-off state last drawing in the time period, so the second control voltage that applies by the second Current Control terminal Vcon2 is not applied to second gate electrode 1110 that draws TFT 1100.
When a TFT 1300 and on draw TFT 1100 in the drop-down time period by on when drawing signal to end, first signal source that is applied to the source electrode that draws TFT 1100 by the sub-V1 of first input end is not applied to drain electrode, thereby first signal source is not exported by output terminal Vout.Because drop-down TFT 1200 keeps conducting state last drawing in (drop-down) time period, exports by output terminal Vout via source electrode and the drain electrode of drop-down TFT 1200 so be applied to the voltage signal in the secondary signal source of the second input terminal V2.Because a TFT 1300 is a cut-off state in the drop-down time period, be not applied to second gate electrode 1110 that draws TFT 1110 so be applied to the first control voltage of the first Current Control terminal Vcon1, thereby the first control voltage does not draw the source electrode of TFT 1100 and the electric current of drain electrode on not increasing.
Selectively, according to example embodiment, because the 2nd TFT 1400 is a conducting state last drawing in the time period, so the second control voltage that applies by the second Current Control terminal Vcon2 is applied to second gate electrode 1110 that draws TFT 1100.Yet, when just (+) voltage that is no more than starting voltage Vth or negative (-) voltage are applied to second gate electrode 1110, on draw TFT 1100 not conductings, thereby first signal voltage that applies by first input end is inoperative to exporting.
In example embodiment, explained the Current Control part that comprises such as the on-off element of TFT, but the Current Control part can comprise the power source that produces pulse signal.For example, in Current Control in Fig. 2 part, when the power source that has a pulse signal of the waveform of last sequential chart among Fig. 8 when generation is electrically connected to second gate electrode, might carry out the Current Control identical with example embodiment.
In addition, in example embodiment the time period of current controling signal identical with the time period of first switching signal, but time period of first switching signal can be different from the time period of current controling signal.
Figure 10 is that Figure 11 is the input signal of the driving element among diagram Figure 10 and the sequential chart of output signal according to circuit diagram of the present invention, that implement the block scheme among Fig. 2.
With reference to Figure 10 and 11, when have than the ON time section t1 of the first switching signal Vg1 the signal Vg2 of short ON time section t2 be applied to the gate electrode of the first Current Control TFT 1300 and have signal Vg3 with signal 2 opposite phases when being applied to the gate electrode of the second Current Control TFT 1400, the required application time of first current controling signal becomes less than the example embodiment among Fig. 6.In this case, signal Vg2 and Vg3 can produce discretely with first control signal, are applied to the gate electrode of Current Control TFT 1300 and 1400, perhaps can produce by the professional component of revising first switching signal.
In addition, in example embodiment, explained by in the last TFT of drawing, forming second gate electrode and controlled channel current, but can also control channel current by in drop-down TFT, forming second gate electrode.
For example, the example embodiment shown in Fig. 6 and 7, second gate electrode that is electrically connected to common node can form in drop-down TFT.
According to driving circuit of the present invention, can in the external zones of display device, form driving circuit.To explain the structure of driving circuit with reference to Figure 12 and 13.
Figure 12 is the vertical view of the layout of the drive part in the pictorial image 6, and Figure 13 is the sectional view of the line X-X ' of the driving circuit in Figure 12.
At first, draw the structure of TFT as follows on.Gate electrode 1120 and gate-control signal line form on such as the transparent substrates 1600 of glass etc.Semiconductor layer 1150 forms between gate electrode 1120 and source electrode 1130 and drain electrode 1140.Gate pole separation layer 1160 forms between gate electrode 1120 and semiconductor layer 1150.On draw TFT second gate electrode 1110 isolate from source electrode 1130 and drain electrode 1140 electricity by protective seam 1170 such as silicon nitride etc.On draw TFT second gate electrode 1110 be electrically connected to the drain electrode of the first control TFT and the second control TFT by first contact hole 1810 of protective seam 1170.
According to lead-out terminal of the present invention owing to utilize identical with gate electrode 1120 layer of lead-out terminal 1500 that forms a driving element, more than draw the drain electrode of TFT and drop-down TFT and gate line to be connected to each other by line layer 1900 such as ITO or IZO.Line layer 1900 is formed on and is electrically connected to drain electrode and exposes second contact hole 1820 of public terminal 1140 and expose on the 3rd contact hole 1830 of lead-out terminal 1500.
According to example embodiment of the present invention, the drive principle that will draw TFT to the 14C explanation with reference to figure 14A.
Figure 14 A is the front elevation that roughly illustrates according to the drive principle of the pull-up circuit of this example embodiment to 14C.
Shown in Figure 14 A, when on draw TFT to have n type semiconductor layer and the positive voltage that is higher than starting voltage when being applied to gate electrode, make corresponding to carrier number purpose electronics and enter into gate electrode, thereby form the raceway groove that will fill with electric current.As shown in Figure 14B, when semiconductor layer was clipped between two gate electrodes that are isolated from each other, positive voltage was applied to first grid electrode, and negative voltage is applied to second gate electrode simultaneously, makes electronics to first grid electrode movement, and therefore more polyelectron can pass through raceway groove.Selectively, shown in Figure 14 C, when positive voltage is applied to second gate electrode, make the semiconductor layer motion of electronics, therefore form second raceway groove that will fill with electric current to the second gate electrode direction.
Therefore, when free voltage (not considering polarity) is applied to second gate electrode and forward voltage and is applied to first grid electrode, can reach the effect that increases channel current.According to above-mentioned mechanism, although cut-off voltage is applied to first grid electrode, when free voltage was applied to second gate electrode, semiconductor layer filled with electric current.
Described N type TFT, but P type TFT has the identical operations principle except the forward voltage that is applied to first grid electrode and cut-off voltage are anti-phase.
For the semiconductor layer electric current in the cut-off state is minimized, second gate electrode needs ground connection or floats.Therefore, when on when drawing TFT to be in the cut-off state, can be by second gate electrode being connected to floating electrode or the ground power source minimizes the Leakage Current of semiconductor layer.Preferably, the design floating electrode has enough spaces, makes the electric charge of sensing second gate electrode to scatter again.
According to the present invention who explains above, according to the conducting of on-off element or cut-off state difference is controlled voltage and be applied to second gate electrode, thereby the turning circuit of channel region can increase and the cut-off current of channel region can minimize.Therefore, display device can be operated more efficiently.Although described example embodiment of the present invention and advantage thereof, should note to make various variations, replacement and change here under condit without departing from the spirit and scope of the present invention.
Claims (34)
1. display device, it comprises:
Thin film transistor (TFT) (TFT) comprising: second gate electrode that receives the source electrode of first signal, the drain electrode that is electrically connected to the driving voltage lead-out terminal, the first grid electrode that receives first switching voltage with set time section, the channel region that forms and isolate from described first grid electrode electricity between source electrode and drain electrode; And
The Current Control part is applied to described second gate electrode with current controling signal according to the described time period.
2. display device as claimed in claim 1, wherein said current control division branch comprises first on-off element, this first on-off element comprises:
The source electrode receives first current controling signal;
Drain electrode is electrically connected to described second gate electrode and is used to export described first current controling signal; And
Gate electrode receives first switching voltage.
3. display device as claimed in claim 2 also comprises the second switch element, and this second switch element comprises:
The source electrode receives second current controling signal;
Drain electrode is electrically connected to the driving voltage lead-out terminal; And
Gate electrode receives second switch voltage, and this second switch voltage has and the described first switching voltage opposite phases.
4. display device as claimed in claim 3, wherein said second gate electrode comprises transparent conductive material.
5. display device as claimed in claim 4, wherein said channel region comprises amorphous silicon layer.
6. display device as claimed in claim 5, wherein said second current controling signal is a ground voltage.
7. display device as claimed in claim 2, wherein said Current Control part also comprises the second switch element, this second switch element comprises:
The source electrode receives second current controling signal;
Drain electrode is electrically connected to described second gate electrode, is used to export described second current controling signal; And
Gate electrode receives second switch voltage, and this second switch voltage has and the described first switching voltage opposite phases.
8. display device as claimed in claim 7, wherein said second gate electrode comprises transparent conductive material.
9. display device as claimed in claim 8, wherein said channel region comprises amorphous silicon layer.
10. display device as claimed in claim 9, wherein said second current controling signal is a ground voltage.
11. display device as claimed in claim 10 wherein forms described TFT in the viewing area, form described Current Control part in external zones.
12. display device as claimed in claim 11 also comprises:
The gate line is electrically connected to the gate electrode of described TFT;
Data line is electrically connected to the source electrode of described TFT; And
Pixel electrode is electrically connected to the drain electrode of described TFT,
Wherein said first switching voltage is the gate voltage that is applied to described gate line.
13. display device as claimed in claim 12, wherein said first signal is the data voltage that is applied to described data line.
14. display device as claimed in claim 13 also comprises on-off element, this on-off element comprises:
Source electrode, secondary signal are applied to this source electrode;
Drain electrode is electrically connected to described driving voltage output signal; And
Gate electrode receives described second switch voltage.
15. display device as claimed in claim 14, wherein said second gate electrode comprises transparent conductive material.
16. display device as claimed in claim 15, wherein said channel region comprises amorphous silicon layer.
17. display device as claimed in claim 16, wherein said second current controling signal is a ground voltage.
18. display device as claimed in claim 14 wherein forms described TFT and described Current Control part in external zones.
19. display device as claimed in claim 18 also comprises:
The gate line;
Data line is substantially perpendicular to described gate line; And
Pixel electrode is formed in described gate line and the described data line zone intersected with each other,
Wherein said lead-out terminal is electrically connected to described gate line, is used for gate voltage is applied to described gate line.
20. display device as claimed in claim 19, wherein said first signal are the forward voltage of described gate voltage.
21. display device as claimed in claim 19, wherein said secondary signal are the cut-off voltages of described gate voltage.
22. a display device that comprises drive part, this drive part comprises:
The signal controlling part is used for processing control signals, described control signal processes and displays signal and switch pixel;
Pull-up circuit is used for dividing described control signal of reception and output to go up the signal of pull portion from described signal control part;
Pull-down circuit is used for dividing the signal that receives described control signal and export drop-down part from described signal control part; And
The Current Control part is used to control the electric current of described pull-up circuit.
23. display device as claimed in claim 22, wherein said pull-up circuit comprises TFT, and this TFT comprises:
The source electrode receives first signal;
Drain electrode is electrically connected to the driving voltage lead-out terminal;
First grid electrode receives first switching voltage, and this first switching voltage has the set time section;
Channel region forms between described source electrode and described drain electrode; And
Second gate electrode is isolated from described first grid electrode electricity.
24. display device as claimed in claim 23, wherein said Current Control part is applied to described second gate electrode with current controling signal, and described current controling signal has basically and the described identical time period of first switching voltage.
25. display device as claimed in claim 24, wherein said current control division branch comprises on-off element, and this on-off element comprises:
The source electrode receives first current controling signal;
Drain electrode is electrically connected to described second gate electrode, is used to export described first current controling signal; And
Gate electrode receives described first switching voltage.
26. display device as claimed in claim 25, wherein said pull-down circuit also comprises TFT, and this TFT comprises:
The source electrode receives secondary signal;
Drain electrode is electrically connected to described driving voltage lead-out terminal;
Gate electrode receives second switch voltage, and described second switch voltage has and the described first switching voltage opposite phases.
27. display device as claimed in claim 26, wherein said current control division branch comprises on-off element, and this on-off element comprises:
The source electrode receives second current controling signal;
Drain electrode is electrically connected to described second gate electrode, is used to export described second current controling signal; And
Gate electrode receives described second switch voltage.
28. display device as claimed in claim 27, wherein said second gate electrode comprises transparent conductive material.
29. display device as claimed in claim 28, wherein said channel region comprises amorphous silicon layer.
30. display device as claimed in claim 29, wherein said second current controling signal is a ground voltage.
31. display device as claimed in claim 30, wherein said drive part forms in external zones.
32. display device as claimed in claim 31 also comprises:
The gate line;
Data line is substantially perpendicular to described gate line; And
Pixel electrode forms this pixel electrode at described gate line and described data line place intersected with each other,
Wherein said lead-out terminal is electrically connected to described gate line and described gate voltage is applied to described gate line.
33. display device as claimed in claim 32, wherein said first signal are the forward voltage of described gate voltage.
34. display device as claimed in claim 33, wherein said secondary signal are the cut-off voltages of described gate voltage.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020060032296A KR20070101033A (en) | 2006-04-10 | 2006-04-10 | Signal driving device and display apparatus having the same |
| KR32296/06 | 2006-04-10 |
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| Publication Number | Publication Date |
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| CN101055706A true CN101055706A (en) | 2007-10-17 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNA2007100960203A Pending CN101055706A (en) | 2006-04-10 | 2007-04-10 | Display apparatus |
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| US (1) | US8089445B2 (en) |
| JP (1) | JP5059471B2 (en) |
| KR (1) | KR20070101033A (en) |
| CN (1) | CN101055706A (en) |
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| KR101450900B1 (en) * | 2008-04-11 | 2014-10-14 | 엘지디스플레이 주식회사 | Display device |
| CN102386236B (en) | 2008-10-24 | 2016-02-10 | 株式会社半导体能源研究所 | Semiconductor device and the method for the manufacture of this semiconductor device |
| CN102751295B (en) | 2009-07-18 | 2015-07-15 | 株式会社半导体能源研究所 | Semiconductor device and method for manufacturing semiconductor device |
| KR101746198B1 (en) * | 2009-09-04 | 2017-06-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Display device and electronic device |
| KR102112065B1 (en) * | 2010-03-26 | 2020-06-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device |
| TWI805306B (en) * | 2011-08-29 | 2023-06-11 | 日商半導體能源研究所股份有限公司 | Semiconductor device |
| CN102969311B (en) * | 2012-11-27 | 2015-02-11 | 京东方科技集团股份有限公司 | Array substrate and manufacturing method thereof, and display device |
| TWI654614B (en) | 2013-07-10 | 2019-03-21 | 日商半導體能源研究所股份有限公司 | Semiconductor device |
| KR102478470B1 (en) | 2015-06-25 | 2022-12-19 | 삼성디스플레이 주식회사 | Thin film transistor substrate, and organic light emitting diode display apparatus |
| KR102481068B1 (en) | 2016-01-04 | 2022-12-27 | 삼성디스플레이 주식회사 | Display device |
| KR102465003B1 (en) | 2016-01-04 | 2022-11-10 | 삼성디스플레이 주식회사 | Display device |
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| KR970009143A (en) | 1995-07-29 | 1997-02-24 | 배순훈 | Multiple access device and method of telephone remote control equipment |
| US5949398A (en) * | 1996-04-12 | 1999-09-07 | Thomson Multimedia S.A. | Select line driver for a display matrix with toggling backplane |
| JPH11327490A (en) * | 1998-05-20 | 1999-11-26 | Yunisutec:Kk | Display device |
| JP2001051292A (en) * | 1998-06-12 | 2001-02-23 | Semiconductor Energy Lab Co Ltd | Semiconductor device and semiconductor display device |
| JP3997636B2 (en) * | 1998-12-16 | 2007-10-24 | カシオ計算機株式会社 | Display device |
| JP2002033481A (en) | 2000-07-14 | 2002-01-31 | Sony Corp | Thin-film semiconductor device |
| US7642573B2 (en) * | 2004-03-12 | 2010-01-05 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
| US20060068532A1 (en) * | 2004-09-28 | 2006-03-30 | Sharp Laboratories Of America, Inc. | Dual-gate thin-film transistor |
| US20050248515A1 (en) * | 2004-04-28 | 2005-11-10 | Naugler W E Jr | Stabilized active matrix emissive display |
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| KR20070101033A (en) | 2007-10-16 |
| US8089445B2 (en) | 2012-01-03 |
| US20070235803A1 (en) | 2007-10-11 |
| JP2007279748A (en) | 2007-10-25 |
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Application publication date: 20071017 |