CN101055392A - Liquid crystal panel, film transistor array substrate and its cured line structure - Google Patents
Liquid crystal panel, film transistor array substrate and its cured line structure Download PDFInfo
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- CN101055392A CN101055392A CN 200710108850 CN200710108850A CN101055392A CN 101055392 A CN101055392 A CN 101055392A CN 200710108850 CN200710108850 CN 200710108850 CN 200710108850 A CN200710108850 A CN 200710108850A CN 101055392 A CN101055392 A CN 101055392A
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Abstract
The invention provides a liquid crystal board, a thin-film transistor array cardinal plate and the curing lines structure thereof for using suitably in the phase disengagement alignment (PSA) fabrication technology. Wherein, the curing lines structure is provided with a peripheral zone whose contacting mat is mounted on the cardinal plate, an etching part extending with the contacting mat. The etching part is electrically connected with as least a common wire in a pixel area of the cardinal plate by through the top of a sealing substance distribution zone of the cardinal plate. Moreover, the etching part keeps a predetermined distance with the other etching in the cardinal plate to ensure that the etching part and the other etching can not be electrically connected. The curing lines structure in the invention phase disengagement alignment fabrication technology can avoid the problem of the Pad Burm of the etching part because of the impedance adding, so that, the fabrication technology passing percent of the liquid crystal board can be improved.
Description
Technical field
The present invention relates to a kind of liquid crystal panel, thin-film transistor array base-plate and cured line structure thereof, be applicable to a kind of orientation that is separated (Phase Separation Alignment, PSA) manufacturing process.
Background technology
See also a kind of liquid crystal panel shown in Figure 1A, it comprises: two first and second relative up and down substrates 100,200, some liquid crystal (Liquid Crystal, LC) 300 materials are sealed in this two substrates 100, between 200, and a backlight module (not shown) is positioned at the rear of second substrate 200 so that light source to be provided.Wherein this first substrate 100 (as first insulated substrate) inside surface plates one deck as by conductive tin indium oxide (Indium Tin Oxide, ITO) made public electrode (Common Electrode) 110, and a colored filter (Color Filter) 120 is set to provide each pixel (Pixel) specific color.Another second relative substrate 200 (as the second insulated substrate) is shown in Fig. 1 C, it is a kind of thin-film transistor array base-plate (TFT Array Substrate), a plurality of thin film transistor (TFT)s (TFT) 230 that are array configurations, many then is set on its inside surface is gate line (the Gate line) 12 that laterally arrange in regular turn and many and is the source electrode line of vertically arranging in regular turn (Source line) 14.Further shown in Figure 1B and Fig. 1 C, at each bar gate line 12 and source electrode line 14 intersection parts, by a thin film transistor (TFT) (TFT) 230, a pixel electrode based on tin indium oxide (ITO) (Pixel Electrode) 220, one storage capacitors (Cs) 235 and a liquid crystal capacitance (C
LC) 240 respective pixel of public generation (Pixel) 250, so that can form a plurality of pixels on this second substrate 200, wherein this thin film transistor (TFT) (TFT) 230 has grid, source electrode and drain electrode to be electrically connected this gate line 12, source electrode line 14 and pixel electrode 220 respectively, and this storage capacitors (Cs) 235 is formed between a concentric line (Common Line) 16 and this pixel electrode 220, and this liquid crystal capacitance (C
LC) 240 be formed between public electrode 110 and this pixel electrode 220 and the liquid crystal (LC) of respective pixel position among.Shown in Fig. 1 C, on second substrate 200, this gate line 12, source electrode line 14 and concentric line 16 can extend until an outer peripheral areas 258 outside pixel display area territory 256 respectively, to be connected to each corresponding engagement pad (Bonding Pad) 20, import since then for required control signal or voltage.Gate line 12 is electrically connected one group of corresponding scan drive circuit 260 and data drive circuit 280 (or being scanning drive chip and data driving chip) with source electrode line 14 respectively by joint sheet 20 as described above, and this chip for driving 260,280 are positioned on pixel display area territory 256 outer peripheral areas 258 outward of this thin-film transistor array base-plate 200, as for concentric line 16 generally then is ground connection, if other have need just can apply a particular outer voltage in joint sheet 20 to import concentric line 16 into.
When this scan drive circuit 260 is given the grid of relevant this thin film transistor (TFT) (TFT) 230 by this joint sheet 20 with gate line 12 outputs one pulse signal, can open (turn on) this thin film transistor (TFT) (TFT) 230 conductings, allow data-signal that this source electrode line 14 transmits to write this liquid crystal capacitance (C by the source electrode and the drain electrode of this thin film transistor (TFT) (TFT) 230
LC) 240 and storage capacitors (Cs) 235 in, make that producing an electric field (Electric Field) between public electrode 110 and this pixel electrode 220 turns to control liquid crystal 300 molecules, the light that backlight module is penetrated can pass through this liquid crystal 300 and produce a pixel (shown in Figure 1A) at this first substrate 100.Otherwise in case this pulse signal ends, this thin film transistor (TFT) (TFT) 230 will cut out (Turn off), makes to have write this liquid crystal capacitance (C
LC) 240 and storage capacitors (Cs) 235 in data-signal continued to keep, just this shows signal still can be maintained on each pixel 250, makes each pixel 250 have the function of storage, until till next time drive pulse signal arrives.
Orientation (Alignment) according to liquid crystal is handled, the difference of windup-degree and drives mode, the kind of LCD (LCD) can be divided into as stable twisted nematic (NT), types such as STN Super TN type (STN) and thin film transistor (TFT) (TFT) type, some electronic installations such as computing machine often need use larger volume and full-color LCD (LCD) is to adopt thin film transistor (TFT) (TFT) type mostly, as common active formula array film transistor-type LCD (Active Matrix Thin Film Transistors LiquidCrystal Display).
In order effectively to control the display effect of LCD, in general display fabrication process, need to carry out an orientation (Alignment) and handle or manufacturing process, arrange to form a tilt angle (Pre-tilt Angle) according to specific direction to form the liquid crystal molecule that a both alignment layers guides between two upper and lower base plates to the thin-film transistor array base-plate of this LCD or colored filter.For example in the liquid crystal born of the same parents manufacturing process of a kind of polymer dispersion type liquid crystal (Polymer-dispersed Liquid Crystal), can use a kind of polymerization to cause (the Polymerization-induced Phase Separation that is separated, PIPS) technology, its main process is: (1) mixes the polymkeric substance and the liquid crystal material of some photopolymerizations (Photo-polymerizable) with special ratios, and with its potpourri sealed up for safekeeping between this two upper and lower base plate to form the liquid crystal born of the same parents of a specific thicknesses; (2) when with this liquid crystal of ultraviolet (UV) rayed born of the same parents' a certain edges thereof, can make this polymkeric substance produce a polymerization (Polymerization, PI) and on the certain edges thereof that approaches this liquid crystal of ultraviolet (UV) rayed born of the same parents to form single polymkeric substance (Polymer) film, and cause this liquid crystal material to separate with polymkeric substance, and away from this liquid crystal of ultraviolet (UV) rayed born of the same parents' certain edges thereof, and the last liquid crystal film that forms of another relative edge who moves to this liquid crystal born of the same parents, this is a phenomenon that is separated.Wherein because the both alignment layers (Alignment Layer) that is preset on this two upper and lower base plates inside surface can make the acting force between the liquid crystal molecule on it reach directed effect, so can be used for the separating of auxiliary liquid crystal and polymkeric substance, taking advantage of a situation forms the liquid crystal film of an orientation (aligned).The making of this existing both alignment layers is handled as the orientation (Alignment) that is both liquid crystal, and its method for making can comprise as using friction (Rubbing) manufacturing process, light orientation (Photo-alignment) manufacturing process, light sensation (Photo-sensitive) manufacturing process or the like.
Also has a kind of orientation that is separated (Phase Separaion Alignment, PSA) manufacturing process is shown in Fig. 2 A, be that monomer (Monomer) 310 and the liquid crystal material 300 that mixes some photocurables (Photocurable) sealed up for safekeeping between this two upper and lower base plate, forming the liquid crystal born of the same parents 30 of a specific thicknesses, and this two upper and lower base plate has all formed one layer of polymeric (PI) layer 306 near liquid crystal born of the same parents 30 two inside surfaces.Then shown in Fig. 2 B, when applying the electrode that a low level curing voltage (Curing Voltage) is given this two upper and lower base plate by the concentric line of a substrate (as thin-film transistor array base-plate) (Common Line) wherein, during with meeting formation one electric field (E) between this two upper and lower base plate, may command liquid crystal (LC) 300 therebetween is poured onto a specific direction, but can not work, therefore can form a preferable phase-separated state subsequently monomer 310.Then in a primary solidification process, shown in Fig. 2 C, when applying this specific voltage, utilize this liquid crystal of a ultraviolet (UV) rayed born of the same parents, to be cured to monomer 310 wherein in polymkeric substance (PI) layer 306 on two inside surfaces of this two upper and lower base plate, and make liquid crystal 300 and monomer 310 phenomenon that is separated occur.Shown in Fig. 2 D, when the input of cutting off this specific curing voltage so that electric field when disappearing, the effect such as the same both alignment layers (Alignment Layer) of the polymkeric substance that forms on the inside surface of this two upper and lower base plate (PI) layer 306, promptly utilize the orientation of monomer 310 in this polymeric layer 306, the liquid crystal 300 that gets final product among this liquid crystal of orientation born of the same parents 30 tilts to a fixing tilt angle (Pre-tilt Angle).If the orientation of liquid crystal 300 has problem, can cause the ray refraction direction not right, make the pixel of LCD show incorrect.
Fig. 3 A further shows first kind of design according to second substrate 200 of Fig. 1 C.Generally speaking, before carrying out this orientation that is separated (PSA) manufacturing process, can be earlier shown in Figure 1A and Fig. 1 C, at first and second substrate 100 about in the of two, apply one deck encapsulant (Sealant) around the pixel display area territory 256 between 200, to form the encapsulant applying area 320 of a glue frame shape, with this first and second substrate 100 about in the of two, pixel display area territory 256 between 200 centers on and seals, itself and outer peripheral areas 258 are isolated, then at this two substrates 100, pour into liquid crystal material 300 in the pixel display area territory between 200, and liquid crystal material 300 is sealed up for safekeeping between this two substrates 100,200, just carry out this orientation that is separated (PSA) manufacturing process then.Yet, as previously mentioned, in the orientation that is separated (PSA) manufacturing process, for the concentric line 16 of the thin film transistor (TFT) 230 by second substrate 200 applies this low level curing voltage (Curing Voltage) so that liquid crystal 300 is toppled over, and then carry out ultraviolet curing (UV Curing) program, therefore the grid side (Gate Side) (outside chip for driving 260) the outer peripheral areas 258 of this second substrate 200 in needs additional designs one to solidify pad (Curing Pad) 20 and is electrically communicated to the concentric line 16 of pixel display area territory 256 interior each pixel (Pixel) 250 of this substrate 200 with cabling 350.Whereby, from then on this curing voltage can solidify pad 20 and pour into, connecting another tin indium oxide (ITO) by cabling 350 is main other cabling 360 and concentric line 16, to be sent to the storage capacitors (Cs) 235 of the correspondence of each pixel (Pixel) 250 in the pixel display area territory 256.Yet, before this cabling 350 that solidifies pad 20 connects concentric lines 16, most likely stride across or bridge joint or connect other cabling and/or through the below of sealing material (Sealant) applying area 320 in the perforation mode.The cabling 350 of curing pad 20 as shown in Figure 3A promptly is connected with another other cabling 360 based on tin indium oxide (ITO) and has formed a Wiring area 355, in the curing manufacturing process of the orientation that is being separated, easily make the cabling 350 of this curing pad 20 become big and be easy to burn (Pad Burn) in the impedance of this Wiring area 355, causing solidifying voltage can't pour into again, this whole liquid crystal panel will be scrapped, if this Wiring area 355 is again just in time to be positioned at sealing material applying area 320, the probability of then burning is higher.
See also shown in Fig. 3 B, be second kind of design of second substrate 200 of foundation Fig. 1 C, be about to solidify the source side that pad 20 is located at second substrate 200.When this cabling 350 that solidifies pad 20 extends from outer peripheral areas 258, through passing through encapsulant applying area 320 when entering viewing area 256, its cabling 350 is that the position has constituted a cross-line district 355 under encapsulant applying area 320 and with other cabling 360, so in the curing manufacturing process of the orientation that be separated, the cabling 350 that equally easily makes this curings pad 20 in the impedance change in this cross-line district 355 greatly and be easy to burn.
And for example shown in Fig. 3 C, the third design for second substrate 200 of foundation Fig. 1 C, wherein solidify the source side that pad 20 is located at second substrate 200 equally, but when the cabling 350 that solidifies pad 20 extends from outer peripheral areas 258, through passing through encapsulant applying area 320 when entering viewing area 256, this cabling 350 has constituted a bridge region 355 with other cabling 360, and this bridge region 355 just is being better than the position under encapsulant applying area 320, so when the curing manufacturing process of the orientation that is separated, the easier cabling 350 that makes this curing pad 20 becomes big and burns in the impedance of this bridge region 355, and causing solidifying voltage can't pour into again.
Summary of the invention
For solving aforementioned prior art problems, a fundamental purpose of the present invention is to provide a kind of liquid crystal panel, thin-film transistor array base-plate and cured line structure thereof that is applicable to the orientation that is separated (PSA) manufacturing process.
For reaching the foregoing invention purpose, the invention provides a kind of liquid crystal panel, thin-film transistor array base-plate and cured line structure thereof that is applicable to the orientation manufacturing process that is separated.Wherein this cured line structure has a contact mat and a cabling portion, this contact mat is positioned at an outer peripheral areas of this substrate, and this cabling portion extends from this contact mat one, the top of the sealing substance distributive province by crossing over this substrate, enter in the pixel display area territory of this substrate, directly to be electrically connected at least one concentric line in this pixel display area territory, and this cabling portion be not electrically connected indirectly with other cabling (as form a cross-over connection or bridge joint or with the structure of perforation form), but and other cabling keep a specific distance to electrically contact to guarantee not produce between this cabling portion and other cabling, if perhaps this cabling portion must be electrically connected to form the structure of a cross-over connection or bridge joint or perforation form indirectly with other cabling, then the structure of this cross-over connection or bridge joint or perforation form must be positioned at outside the sealing substance distributive province.
Aforesaid cured line structure, wherein preferably, form several sweep traces and several data lines in the viewing area of this thin-film transistor array base-plate and be to intersect and arrange, and described thin film transistor (TFT) lays respectively at this sweep trace and data line and intersects the wherein electrode of part and this each thin film transistor (TFT) and be connected a pixel electrode and turn to control liquid crystal.Concentric line in the viewing area of this first substrate is used for connecting respectively described sweep trace and data line to each self-corresponding several scanning drive chips and several data driving chip.This curing line is located at outside described scanning drive chip and the data driving chip.This control voltage is an alternating voltage or a direct current voltage.This cabling portion extends from this contact mat one, through crossing on the sealing species distribution district, is connected to this at least one concentric line in this viewing area.This cabling portion extends from this contact mat, and keeps a specific distance with other cabling, and then is communicated to this at least one concentric line in this viewing area, and wherein this specific distance can be guaranteed not have between this cabling portion and other cabling and electrically contacts.
The present invention also provides a kind of thin-film transistor array base-plate, be applicable to the orientation manufacturing process that is separated, this thin-film transistor array base-plate comprises: a sealing substance distributive province, on this thin-film transistor array base-plate, with the relative substrate junction integrator of this thin-film transistor array base-plate with another; One viewing area and a neighboring area, define on this thin-film transistor array base-plate by described sealing substance distributive province and to form, wherein this viewing area is provided with several sweep traces and data line and connects several thin film transistor (TFT)s respectively and produce pixel with the control liquid crystal, and several concentric lines are used for connecting respectively sweep trace and data line; And at least one curing line, constituted by a Low ESR metal, it comprises a contact mat, be located at this neighboring area and receive one and control the input of voltage to determine the tilt angle of this liquid crystal, an and cabling portion, extend from this contact mat, on crossing over sealing species distribution district, be communicated to the concentric line in this viewing area.
The present invention also provides a kind of liquid crystal panel, is applicable to the orientation manufacturing process that is separated, and this liquid crystal panel comprises: two relative first substrate and second substrates; One sealing substance distributive province on this first substrate, is used for this first substrate and the second substrate junction integrator; One viewing area and a neighboring area, define on this first substrate by described sealing substance distributive province and to form, wherein this viewing area is provided with several sweep traces and data line and is used to control liquid crystal producing pixel, and several concentric lines are used for connecting respectively sweep trace and data line; And at least one curing line, constituted by a Low ESR metal, it comprises a contact mat, be located at this neighboring area and receive one and control the input of voltage to determine the tilt angle of this liquid crystal, an and cabling portion, extend from this contact mat, on crossing over sealing species distribution district, be communicated to the concentric line in this viewing area.
Aforesaid liquid crystal panel, preferably, this first substrate is a thin-film transistor array base-plate, a plurality of thin film transistor (TFT)s that are array that distribute in its viewing area turn to the control liquid crystal.These several sweep traces and the cross arrangement each other of several data lines, and described thin film transistor (TFT) lays respectively at this sweep trace and data line and intersects the wherein electrode of part and this each thin film transistor (TFT) and be connected a pixel electrode and turn to the control liquid crystal.This concentric line is used for described sweep trace and data line are connected to each self-corresponding several scanning drive chips and several data driving chip.This control voltage is an alternating voltage or a direct current voltage.This cabling portion extends across the concentric line that is communicated on the sealing species distribution district in this viewing area from this contact mat one.This cabling portion extends from this contact mat, and keeps a specific distance with other cabling, and then is communicated to this at least one concentric line in this viewing area, and wherein this specific distance can be guaranteed not have between this cabling portion and other cabling and electrically contacts.
When the curing manufacturing process of the orientation that is separated, liquid crystal panel of the present invention, thin-film transistor array base-plate and cured line structure thereof can avoid impedance excessive and burn, so can improve the manufacturing process qualification rate of this liquid crystal panel.
Description of drawings
Figure 1A is a kind of fragmentary cross-sectional view of available liquid crystal panel;
Figure 1B is for constituting the circuit diagram of each pixel in the available liquid crystal panel that shows Figure 1A;
Fig. 1 C is the circuit diagram of the thin film transistor base plate of the available liquid crystal panel of demonstration Figure 1A;
Fig. 2 A, Fig. 2 B, Fig. 2 C and Fig. 2 D are for showing the synoptic diagram of each step in a kind of orientation manufacturing process that is separated;
Fig. 3 A is the part displayed map according to first kind of design of the thin film transistor base plate of Fig. 1 C, wherein shows the part of grid pole side (Gate Side) of this substrate;
Fig. 3 B is the part displayed map according to second kind of design of the thin film transistor base plate of Fig. 1 C, wherein shows the part source side (Source Side) of this substrate;
Fig. 3 C is the part displayed map according to the third design of the thin film transistor base plate of Fig. 1 C, wherein shows the part source side (Source Side) of this substrate;
Fig. 4 A is the part displayed map according to the thin film transistor base plate of first embodiment of the invention, wherein shows the part of grid pole side (Gate Side) of this substrate;
Fig. 4 B is the part displayed map according to the thin film transistor base plate of second embodiment of the invention, wherein the part source side of display base plate (Source Side).
Wherein, description of reference numerals is as follows:
40a, the 40b first substrate 48a, 48b solidifies line
410a, 410b contact mat 420a, 420b cabling portion
500a, 500b sealing substance distributive province 510a, 510b pixel display area
520a, 530a bonding pad, 520a neighboring area
Other cabling of framework 460b of 530b cross-over connection, bridge joint or perforation
The 600a concentric line
Embodiment
According to a kind of orientation that is separated (Phase Separation Alignment that is applicable to of the present invention, PSA) liquid crystal panel of manufacturing process, it comprises: two the first relative up and down substrates and second substrate, liquid crystal (Liquid Crystal, LC) material is sealed between this two substrates, and one backlight module be used to provide light source, wherein this first substrate is a kind of thin-film transistor array base-plate (TFT Array Substrate), a plurality of thin film transistor (TFT)s (TFT) that are array configurations are set on its inside surface, many are the horizontal sweep trace of arranging in regular turn or title gate line (Gate line) and many data line or title source electrode line (Source line) (not shown)s that are vertical arrangement in regular turn, and many concentric lines (Common Line), wherein all cross arrangements each other of each bar sweep trace and each data line, and this sweep trace and data line intersect part corresponding thin film transistor (TFT) are set respectively, one grid of this each thin film transistor (TFT) is electrically connected corresponding scanning line, one source pole is electrically connected corresponding data line, and one drain electrode be electrically connected a pixel electrode and turn to, this thin film transistor (TFT) whereby with the control liquid crystal, this pixel electrode, storage capacitors (C
s) and liquid crystal capacitance (C
LC) can constitute each pixel (Pixel) (shown in Figure 1B).Each bar concentric line is electrically connected the corresponding storage capacitors (C of each pixel (Pixel)
s), and aforementioned sweep trace and data line be connected to each self-corresponding several scanning drive chips and several data driving chip.Above-mentioned second substrate, thin film transistor (TFT), chip for driving, pixel electrode, storage capacitors (C
s) and liquid crystal capacitance (C
LC), assembly such as gate line and source electrode line all can adopt various designs, similarly be similar or be different from Figure 1A, Figure 1B or Fig. 1 C shown in prior art all can, so therefore not limiting the interest field of spirit of the present invention and opinion, and following will repeating no more, will only be illustrated at cured line structure.
See also shown in Fig. 4 A, it shows the part of grid pole side (Gate Side) of the first substrate 40a of first embodiment of the invention.Before carrying out this orientation that is separated (PSA) manufacturing process, need to apply one deck encapsulant (Sealant) around the pixel display area territory 510a between the two relative first substrate 40a and the second substrate (not shown) earlier, to form the sealing substance distributive province 500a of a glue frame shape, this first substrate 40a is gone up to be combined into one the first substrate 40a and this second substrate (not shown) round a sealing substance distributive province 500a, and this first substrate 40a is defined as a viewing area 510a and the neighboring area 520a that a usefulness liquid crystal produces pixel, so the pixel display area territory 510a between this two relative first substrate 40a and second substrate can be centered on and seals, itself and outer peripheral areas 520a are isolated, pour into liquid crystal material among the pixel display area territory 510a between this two substrates then, liquid crystal material is sealed up for safekeeping.Be used to be provided with thin film transistor (TFT) (TFT), this concentric line 600a, gate line and source electrode line in the pixel display area territory 510a of this first substrate 40a.Then distribute aforementioned scanning drive chip and data driving chip in the 520a of this neighboring area to connect aforementioned gate line and source electrode line respectively.Outside this scanning drive chip and data driving chip, many neighboring area 520a that solidify line 48a from this first substrate 40a are arranged, through passing through sealing species distribution district 500a to enter viewing area 510a.
Shown in Fig. 4 A, be the be separated cured line structure 48a of orientation (PSA) manufacturing process of being applicable to of foundation first embodiment of the invention, it comprises a contact mat 410a and a 420a of cabling portion, wherein this contact mat 410a is located at this neighboring area 520a and is used to receive the external control voltage with the high level of alternating current or direct current form input (or be called solidify voltage (Curing Voltage)) to determine the tilt angle of this liquid crystal, and the contact mat 410a one of a 420a of cabling portion in from this from outer peripheral areas 520a extended, but by crossing over the top of sealing species distribution district 500a, directly be electrically connected to the concentric line 600a (being connected to one another at a bonding pad 530a) in the 510a of this viewing area, promptly the 420a of this cabling portion does not do to be electrically connected indirectly (as interconnecting with cross-over connection or bridge joint or perforation (Through Hole) mode) to concentric line 600a by other cabling, the 420a of this cabling portion can keep a specific distance with other cabling of vicinity on this first substrate 40a simultaneously, wherein this specific distance must be to guarantee not electrically contact between this 420a of cabling portion and other cabling, can reduce by this cabling design and solidify the probability that line 48a is burnt.In this orientation that is separated (PSA) manufacturing process, be similar to A in regular turn as Fig. 2, Fig. 2 B, step shown in Fig. 2 C and Fig. 2 D, promptly apply specific curing voltage (Curing Voltage) and (give this contact mat 410a as 15～40V), and by the 420a of cabling portion, the concentric line 600a of thin film transistor (TFT) reaches storage capacitors (Cs), between first and second substrate liquid crystal is formed an electric field about in the of two at this, then carry out ultraviolet curing (UV Curing) program again, make the inside surface of this two substrates respectively form a polymkeric substance (PI) layer as a both alignment layers (Alignment Layer), utilize the orientation of monomer in this polymeric layer (Monomer), can topple over a fixing tilt angle (Pre-tilt Angle) by the orientation liquid crystal, after guaranteeing the LCD assembling, the light that its backlight module sends can be according to the guiding of this pre-dumping liquid crystal, make correct refractive direction, make the pixel of LCD show normal.Because this curing line 48a itself is made of any Low ESR metal, as long as its unit area impedance (Resistivity) is to be lower than tin indium oxide (Indium Tin Oxide, ITO) get final product, for example aluminium neodymium (AlNd), aluminium barium (Al/Mo/Al) lamination, titanium (Ti), titanium nitride (TiNx) or copper materials such as (Cu) all can, so this curing line 48a itself can bear the curing voltage of higher level, the tin indium oxide (ITO) that uses compared with prior art also is difficult for burning.
Other sees also Fig. 4 B, it shows according to the be separated cured line structure 48b of orientation (PSA) manufacturing process of being applicable to of the second embodiment of the present invention is located at the source side (SourceSide) of this first substrate 40b, and comprise a contact mat 410b and a 420b of cabling portion, it is different from the first embodiment part shown in Fig. 4 A and is: in this second embodiment, the 420b of this cabling portion extends from the contact mat 410b one of this outer peripheral areas 520b, and after crossing over sealing species distribution district 500b top, if the 420b of this cabling portion must go up the contiguous corresponding connection of other cabling 460b and produce a cross-over connection with this first substrate 40b, during the framework 530b of bridge joint or perforation, then this cross-over connection, bridge joint or perforation framework 530b must change and be set to (in the 510b of this viewing area) outside the sealing species distribution district 500b.
According to liquid crystal panel, thin-film transistor array base-plate and the cured line structure thereof that is applicable to the orientation manufacturing process that is separated of the present invention, be that cabling portion by avoiding this curing line connects other cabling with cross-over connection or bridge joint or perforation mode, and this cabling portion is without the below in this sealing species distribution district, cured line structure of the present invention like this is in the curing manufacturing process of the orientation that is separated, can prevent that cabling portion from can take place because of impedance becomes the problem of burning (Pad Burn) greatly, therefore can improve the manufacturing process qualification rate of this liquid crystal panel.
In sum; though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; any those skilled in the art; without departing from the spirit and scope of the present invention; when can being used for a variety of modifications and variations, so protection scope of the present invention should be looked the scope that claim defines and is as the criterion.
Claims (18)
1. cured line structure, be applicable to the orientation manufacturing process that is separated of liquid crystal indicator, and this liquid crystal indicator has two relative first substrate and second substrates, be used for this first substrate and the second substrate junction integrator round a sealing substance distributive province on this first substrate, and this first substrate is defined as a viewing area and the neighboring area that a usefulness liquid crystal produces pixel, this cured line structure comprises:
One contact mat is located at this neighboring area and is received one and controls the input of voltage to determine the tilt angle of this liquid crystal; And
One cabling portion extends from this contact mat, through crossing on the sealing species distribution district, is communicated at least one concentric line in this viewing area, and wherein this cabling portion is made of a Low ESR metal.
2. cured line structure as claimed in claim 1, wherein this first substrate is a thin-film transistor array base-plate, a plurality of thin film transistor (TFT)s that are array that distribute in its viewing area turn to the control liquid crystal.
3. cured line structure as claimed in claim 2, wherein form several sweep traces and several data lines in the viewing area of this thin-film transistor array base-plate and be to intersect and arrange, and described thin film transistor (TFT) lays respectively at this sweep trace and data line and intersects the wherein electrode of part and this each thin film transistor (TFT) and be connected a pixel electrode and turn to control liquid crystal.
4. cured line structure as claimed in claim 3, wherein the concentric line in the viewing area of this first substrate is used for connecting respectively described sweep trace and data line to each self-corresponding several scanning drive chips and several data driving chip.
5. cured line structure as claimed in claim 4, wherein this curing line is located at outside described scanning drive chip and the data driving chip.
6. cured line structure as claimed in claim 1, wherein this control voltage is an alternating voltage.
7. cured line structure as claimed in claim 1, wherein this control voltage is a direct current voltage.
8. cured line structure as claimed in claim 1, wherein this cabling portion extends from this contact mat one, through crossing on the sealing species distribution district, is connected to this at least one concentric line in this viewing area.
9. cured line structure as claimed in claim 1, wherein this cabling portion extends from this contact mat, and keep a preset space length with other cabling, and and then be communicated to this at least one concentric line in this viewing area, wherein this preset space length can be guaranteed not have between this cabling portion and other cabling and electrically contacts.
10. a thin-film transistor array base-plate is applicable to the orientation manufacturing process that is separated, and this thin-film transistor array base-plate comprises:
One sealing substance distributive province is on this thin-film transistor array base-plate, with the relative substrate junction integrator with another of this thin-film transistor array base-plate;
One viewing area and a neighboring area, define on this thin-film transistor array base-plate by described sealing substance distributive province and to form, wherein this viewing area is provided with several sweep traces and data line and connects several thin film transistor (TFT)s respectively and produce pixel with the control liquid crystal, and several concentric lines are used for connecting respectively sweep trace and data line; And
At least one curing line, constituted by a Low ESR metal, it comprises a contact mat, be located at this neighboring area and receive one and control the input of voltage to determine the tilt angle of this liquid crystal, an and cabling portion, extend from this contact mat, on crossing over sealing species distribution district, be communicated to the concentric line in this viewing area.
11. a liquid crystal panel is applicable to the orientation manufacturing process that is separated, this liquid crystal panel comprises:
Two relative first substrate and second substrates;
One sealing substance distributive province on this first substrate, is used for this first substrate and the second substrate junction integrator;
One viewing area and a neighboring area, define on this first substrate by described sealing substance distributive province and to form, wherein this viewing area is provided with several sweep traces and data line and is used to control liquid crystal producing pixel, and several concentric lines are used for connecting respectively sweep trace and data line; And
At least one curing line, constituted by a Low ESR metal, it comprises a contact mat, be located at this neighboring area and receive one and control the input of voltage to determine the tilt angle of this liquid crystal, an and cabling portion, extend from this contact mat, on crossing over sealing species distribution district, be communicated to the concentric line in this viewing area.
12. liquid crystal panel as claimed in claim 11, wherein this first substrate is a thin-film transistor array base-plate, and a plurality of thin film transistor (TFT)s that are array that distribute in its viewing area turn to the control liquid crystal.
13. liquid crystal panel as claimed in claim 12, wherein these several sweep traces and the cross arrangement each other of several data lines, and described thin film transistor (TFT) lays respectively at this sweep trace and data line and intersects the wherein electrode of part and this each thin film transistor (TFT) and be connected a pixel electrode and turn to the control liquid crystal.
14. liquid crystal panel as claimed in claim 13, wherein this concentric line is used for described sweep trace and data line are connected to each self-corresponding several scanning drive chips and several data driving chip.
15. liquid crystal panel as claimed in claim 11, wherein this control voltage is an alternating voltage.
16. liquid crystal panel as claimed in claim 11, wherein this control voltage is a direct current voltage.
17. liquid crystal panel as claimed in claim 11, wherein this cabling portion extends across the concentric line that is communicated on the sealing species distribution district in this viewing area from this contact mat one.
18. liquid crystal panel as claimed in claim 11, wherein this cabling portion extends from this contact mat, and keep a preset space length with other cabling, and and then be communicated to this at least one concentric line in this viewing area, wherein this preset space length can be guaranteed not have between this cabling portion and other cabling and electrically contacts.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007101088503A CN100520544C (en) | 2007-06-05 | 2007-06-05 | Liquid crystal panel, film transistor array substrate and its cured line structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007101088503A CN100520544C (en) | 2007-06-05 | 2007-06-05 | Liquid crystal panel, film transistor array substrate and its cured line structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101055392A true CN101055392A (en) | 2007-10-17 |
| CN100520544C CN100520544C (en) | 2009-07-29 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2007101088503A Active CN100520544C (en) | 2007-06-05 | 2007-06-05 | Liquid crystal panel, film transistor array substrate and its cured line structure |
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| CN (1) | CN100520544C (en) |
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| CN101599496B (en) * | 2008-06-06 | 2011-06-15 | 群康科技(深圳)有限公司 | Base plate and mother base plate of thin-film transistor |
| CN104765195A (en) * | 2015-05-07 | 2015-07-08 | 京东方科技集团股份有限公司 | Liquid crystal display panel and manufacture method and display device thereof |
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| WO2019085197A1 (en) * | 2017-11-03 | 2019-05-09 | 惠科股份有限公司 | Wiring structure of display substrate |
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- 2007-06-05 CN CNB2007101088503A patent/CN100520544C/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101599496B (en) * | 2008-06-06 | 2011-06-15 | 群康科技(深圳)有限公司 | Base plate and mother base plate of thin-film transistor |
| CN104765195A (en) * | 2015-05-07 | 2015-07-08 | 京东方科技集团股份有限公司 | Liquid crystal display panel and manufacture method and display device thereof |
| CN105549270A (en) * | 2016-02-23 | 2016-05-04 | 深圳市华星光电技术有限公司 | Liquid crystal light alignment circuit and liquid crystal panel |
| CN105549270B (en) * | 2016-02-23 | 2018-12-07 | 深圳市华星光电技术有限公司 | Liquid crystal light orientation circuit and liquid crystal display panel |
| CN106019742A (en) * | 2016-06-15 | 2016-10-12 | 深圳市华星光电技术有限公司 | Manufacturing method for liquid crystal display panel |
| CN106019742B (en) * | 2016-06-15 | 2019-04-30 | 深圳市华星光电技术有限公司 | The production method of liquid crystal display panel |
| CN106547155A (en) * | 2017-01-12 | 2017-03-29 | 深圳市华星光电技术有限公司 | Liquid crystal panel and liquid crystal panel light alignment method |
| CN106547155B (en) * | 2017-01-12 | 2019-09-17 | 深圳市华星光电技术有限公司 | Liquid crystal display panel and liquid crystal display panel light alignment method |
| CN107807481A (en) * | 2017-11-03 | 2018-03-16 | 惠科股份有限公司 | A kind of Wiring structure of display base plate |
| WO2019085197A1 (en) * | 2017-11-03 | 2019-05-09 | 惠科股份有限公司 | Wiring structure of display substrate |
| CN110967881A (en) * | 2019-12-30 | 2020-04-07 | Tcl华星光电技术有限公司 | Display panel and preparation method thereof |
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| CN100520544C (en) | 2009-07-29 |
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