CN101047123A - Semiconductor element, semiconductor device, and method of manufacturing the same - Google Patents
Semiconductor element, semiconductor device, and method of manufacturing the same Download PDFInfo
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- CN101047123A CN101047123A CN 200710087841 CN200710087841A CN101047123A CN 101047123 A CN101047123 A CN 101047123A CN 200710087841 CN200710087841 CN 200710087841 CN 200710087841 A CN200710087841 A CN 200710087841A CN 101047123 A CN101047123 A CN 101047123A
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Abstract
To provide a semiconductor film capable of obtaining a pseud-monocrystal semiconductor thin film in which a crystal orientation is controlled on a transparent insulating substrate, to provide a semiconductor element, to provide a semiconductor device, and to provide methods of manufacturing the semiconductor film, the semiconductor element and the semiconductor device therefor. The method of manufacturing a semiconductor thin film comprises the steps of: mutually facing and connecting a front surface of a monocrystal semiconductor substrate (monocrystal silicon substrate 2) provided with a plurality of protruding sections 10 arranged on the front surface thereof and a front surface of a translucent substrate 4 depositing the semiconductor thin film on the front surface thereof; performing a heat treatment of the semiconductor thin film to carry out a fusion crystallization of the semiconductor thin film; forming, on the translucent substrate 4, the pseud-monocrystal semiconductor thin film (pseud-monocrystal silicon thin film 20) constituted by a plurality of approximate monocrystal grains (crystal silicon 16) by making each of the plurality of protruding sections 10 as a starting point; and separating the translucent substrate 4 including the pseud-monocrystal semiconductor thin film (pseud-monocrystal silicon thin film 20) from the monocrystal semiconductor substrate (monocrystal silicon substrate 2).
Description
Technical field
The present invention relates to semiconductor film, semiconductor element, semiconductor device and their manufacture method.
Background technology
Polycrystalline SiTFT (poly-Si TFT) is widely used as the method for making the high-performance transistor unit on insulated substrates such as glass or quartz.In Poly-Si TFT, to its performance impact bigger be fault of construction in the polysilicon membrane.In polysilicon membrane, there are various faults of construction such as transplanting (implantation), twin boundary, stacking fault, grain boundary.Because these defectives become the electrons/motion of obstruction as conductive carrier, therefore compare with single-crystal silicon element, poly-Si TFT general performance is relatively poor.In order to solve such problem, proposed to increase the crystal grain diameter or the local method that forms the single crystal-like silicon thin film of the polysilicon membrane on the insulated substrate.Enumerate these methods below.
1.SLS (Sequential Lateral Solidification) method is: when the irradiation excimer laser obtains polysilicon membrane, make the spacing of scanning direction very little, thereby the method (for example, with reference to non-patent literature 1) that crystal grain is stretched more longways along laser scanning direction.
2.CLC (CW-laser Lateral Crystallization) method is: Yi Bian shine continuous oscillation laser, Yi Bian substrate is scanned the method (for example, with reference to non-patent literature 2) that the crystal grain of silicon is stretched more longways along laser scanning direction.
3.SELAX (Selectively Enlarging Laser X ' tallization) method is: after having carried out crystalization by excimer laser, utilize continuous oscillation laser, make the method (for example, with reference to non-patent literature 3) of both depositing crystal grain and stretching more longways along laser scanning direction.
4.PMELA (Phase-mask Modulated Excimer Laser Annealing) method is: utilize the phase difference mask, formation has the excimer laser of intensity distributions, carry out the crystalization of silicon thin film, and utilize the thermal gradient that between strong zone of intensity and weak zone, produces, make the method (for example, with reference to non-patent literature 4) of the grain growth of direction in the face of film.
5. μ-Czochralski method is: minute aperture is set on substrate, pile up amorphous silicon membrane according to the mode that covers minute aperture, if to such structured illumination excimer laser, then the bottom from minute aperture begins fusion/crystalization, have only the fastest crystal of the speed of growth optionally to grow, thereby can obtain the method (for example, with reference to non-patent literature 5,6) of single crystal-like silicon thin film (quasi-single crystal silicon thin film).
If utilize these methods, then all can obtain to have the polysilicon membrane of the above crystal grain diameter of several μ m.If to such silicon thin film, note making thin-film transistor according to the mode that does not contain the grain boundary, then all can on insulated substrate, obtain to have 300～500cm
2The thin-film transistor element of the high carrier mobility that/Vs is above.
[non-patent literature 1] " Characterisation of poly-Si TFT ' s in DirectionallySolidified SLS Si " .S.D.Brotherton, et al., Asia Display/IDW ' 01 Proceedings, pp.387-390
[non-patent literature 2] " Ultra-high Performance Poly-Si TFT ' s on a Glassby a Stable Scanning CW Laser Lateral Crystallization ", A.Hara, et al., AM-LCD ' 01 Digest of Technical Papers, pp.227-230
[non-patent literature 3] " System on Glass Display with LTPS-TFTs Formed using SELAX (Selectively Enlarging Laser X ' is Technology tallization) ", M.Hatano, et al., Proceedings of IDW/AD ' 05, pp.953-956
[non-patent literature 4] " Advanced Phase-Modulators for Next-GenerationLow-Temperature Si Film Crystallization Method ", Y.Taniguchi, et al., Proceedings of IDW/AD ' 05, pp.981-982
[non-patent literature 5] " Effects of crystallographic orientation of single-crystalline seed on μ-Czochralski process in excimer-laser crystallization ", M.He, et al., Proceedings of IDW/AD ' 05, pp.1213-1214
[non-patent literature 6] " Single-Crystalline Si Thin-Film Transistors Fabricatedwith μ-Czochralski (Grain-Filter) Process ", R.Ishihara, et al., AM-LCD ' 02Digest of Technical Papers, pp.53-56
But, in above-mentioned existing method,, the crystal orientation of the crystal grain that obtains to be controlled although can form big crystal grain about number μ m, the crystal orientation of each crystal grain is in state at random.Because carrier mobility depends on the crystal orientation of silicon and difference, therefore, owing to the orientation of crystal grain not by unification, so the performance difference of each thin-film transistor element is very big.In order further to improve the electrical characteristic of thin-film transistor element, wish to establish to form the manufacture method of the crystal orientation of crystal grain having been carried out the high-quality semiconductive thin film of control.
Summary of the invention
A mode of the present invention is conceived to such problem, and its purpose is, a kind of semiconductor film, semiconductor device and their manufacture method that obtains effectively to have controlled the high-quality monocrystalline or the single crystal-like semiconductor film of crystal orientation is provided.
Manufacture method at semiconductor element of the present invention comprises: first operation, prepare to be provided with first substrate of a plurality of juts that are formed on the surface and second substrate that the surface is formed with semiconductor film; With second operation, make under described a plurality of jut and the described semiconductor film state of contact, described semiconductor film is implemented heat treatment.
In the manufacture method of above-mentioned semiconductor element, can in described second operation, make described semiconductor film fusion by described heat treatment.
In the manufacture method of above-mentioned semiconductor element, also can in described semiconductor film, form a plurality of single die accordingly with described a plurality of juts by carrying out described second operation.
In the manufacture method of semiconductor element of the present invention, " single die " is meant the crystallinity zone (crystalline domain) with regulation crystal orientation, also can comprise for example by single crystal-like zone, approximate unijunction crystallinity zone or semiconductor film are implemented heat treatment, compare the zone that crystallographic has improved relatively etc. with the crystallographic of at least a portion of semiconductor film before implementing this heat treatment.
In the manufacture method of above-mentioned semiconductor element, also can comprise the 3rd operation, after described second operation, described first substrate is separated with described second substrate.Thus, also can utilize described first substrate after the separation once more.
In the manufacture method of above-mentioned semiconductor element, described a plurality of juts can be formed by monocrystalline silicon.
In the manufacture method of above-mentioned semiconductor element, described a plurality of juts also can comprise the oxide-film on surface separately that is formed at described a plurality of juts.Form oxide-film if having at monocrystalline silicon etc. on the basalis of regulation crystal orientation, then this oxide-film also becomes the film that is oriented control, when the heat treatment of semiconductor film, can improve the crystallographic of this semiconductor film.
In the manufacture method of above-mentioned semiconductor element, described a plurality of juts can comprise the oxide-film on surface separately that is formed at described a plurality of juts, and in described the 3rd operation, described oxide-film is removed.
In the manufacture method of above-mentioned semiconductor element, each of described a plurality of juts can be formed by porous matter.
In the manufacture method of above-mentioned semiconductor element, each of described a plurality of juts can be formed by porous matter, in described the 3rd operation, can remove described a plurality of jut.
In the manufacture method of above-mentioned semiconductor element, described second operation can comprise following operation: from opposed one side of the face with being formed with described semiconductor film of described second substrate, to described semiconductor film irradiating laser.
Semiconductor element of the present invention is by the manufacture method manufacturing of above-mentioned semiconductor element.
The manufacture method of semiconductor device of the present invention comprises the manufacture method of above-mentioned semiconductor element.
Semiconductor device of the present invention is by the manufacture method manufacturing of above-mentioned semiconductor device.
The manufacture method of semiconductive thin film of the present invention comprises: will be provided with a plurality of juts that are arranged in the surface single crystalline semiconductor substrate, with surface sediment the light-transmitting substrate of semiconductive thin film is arranged, make mutual surface carry out the operation of combination relatively; Described semiconductive thin film being implemented heat treatment, make described semiconductive thin film fusion crystalization, is starting point with each of described a plurality of juts on described light-transmitting substrate, forms the operation of the single crystal-like semiconductive thin film that is made of a plurality of near single grains; And the described light-transmitting substrate that will the comprise described single crystal-like semiconductive thin film operation of separating with described single crystalline semiconductor substrate.According to the present invention, can on light-transmitting substrate, obtain the single crystal-like semiconductive thin film.Because resulting single crystal-like semiconductive thin film, constitute by the near single grain in the scope that to be formed on approximate jut with single crystalline semiconductor substrate be the center, therefore, have the big and crystal orientation Be Controlled of crystal grain, in fact with same excellent semiconducting behavior such as monocrystalline silicon or SOI.And owing to can correctly control the position of crystal growth portion, therefore, only the necessary part on light-transmitting substrate obtains high-quality single crystal-like semiconductive thin film effectively.
In the manufacture method of this semiconductive thin film, described single crystalline semiconductor substrate is provided with oxide-film on the surface that comprises described a plurality of juts, in the operation of described separation, removes described oxide-film.
In the manufacture method of this semiconductive thin film, described single crystalline semiconductor substrate, its described a plurality of juts are porous matter, in the operation of described separation, remove described a plurality of jut.
In the manufacture method of this semiconductive thin film, in the operation that forms described single crystal-like semiconductive thin film, can comprise following operation: from opposite face one side of the face with being formed with described semiconductive thin film of described light-transmitting substrate, to described semiconductive thin film irradiating laser.
Semiconductive thin film of the present invention is by the manufacture method manufacturing of above-mentioned semiconductive thin film.
The manufacture method of semiconductor device of the present invention comprises the manufacture method of above-mentioned semiconductive thin film.
Semiconductor device of the present invention is by the manufacture method manufacturing of above-mentioned semiconductor device.
Description of drawings
Fig. 1 is the figure of manufacture method of the semiconductive thin film of expression embodiment of the present invention;
Fig. 2 is the figure of manufacture method of the semiconductive thin film of expression embodiment of the present invention;
Fig. 3 is the figure of the semiconductive thin film of expression embodiment of the present invention;
Fig. 4 is the figure of the substrate separation circuit of expression embodiment of the present invention;
Fig. 5 is the figure of the substrate separation circuit of expression embodiment of the present invention;
Fig. 6 is the figure of manufacture method of the semiconductive thin film of expression embodiment of the present invention;
Fig. 7 is the figure of manufacture method of the semiconductive thin film of expression embodiment of the present invention;
Fig. 8 is the figure of manufacture method of the semiconductor element of expression embodiment of the present invention;
Fig. 9 is the figure of the semiconductor device of expression embodiment of the present invention.
Among the figure: the 2-monocrystalline silicon substrate; The 4-light-transmitting substrate; The 6-thin-film transistor; The 10-jut; 12-silicon thin film (amorphous silicon membrane); The 14-excimer laser; The 16-crystalline silicon; The 18-contact; 20-single crystal-like silicon thin film; The 22-oxide film thereon; The 24-grain boundary; The 26-contact; The 30-monocrystalline silicon substrate; 32-porous matter monocrystalline silicon layer; The 34-jut; The 36-contact; The 38-monocrystalline silicon substrate; The 40-resist layer; The 42-monocrystalline silicon substrate; The 44-jut; The 46-resist layer; The 48-monocrystalline silicon substrate; The 50-jut; 52-single crystal-like silicon thin film; The 54-silicon oxide film; The 56-gate electrode; The 58-source region; The 60-drain region; The 62-active region; The 64-silicon oxide film; 66-source electrode; The 68-drain electrode; The 100-OLED display; The 110-viewing area; The 112-pixel region; The 114-drive area; The 116-drive area.
Embodiment
Below, with reference to accompanying drawing, describe having used embodiments of the present invention.
Fig. 1 and Fig. 2 are the figure of manufacture method of the semiconductive thin film of expression embodiment of the present invention.The manufacture method of the semiconductive thin film of present embodiment at first, is piled up amorphous silicon membrane as semiconductive thin film (below be called silicon thin film) 12 on light-transmitting substrate 4 shown in Fig. 1 (A).Silicon thin film 12 can be piled into about thickness 100nm on the light-transmitting substrate 4 according to plasma chemical vapor deposition (PECVD method), Low Pressure Chemical Vapor Deposition (LPCVD method) etc.In addition, the insulating material of formation light-transmitting substrate 4 is not limited to glass.Alkali-free glass or quartz that light-transmitting substrate 4 for example can use liquid crystal to use.The surface roughness of wishing light-transmitting substrate 4 is as far as possible little.This is in order to join with single crystalline semiconductor substrate described later.Then, preparation surface is provided with the monocrystalline silicon substrate 2 as single crystalline semiconductor substrate of jut 10.Monocrystalline silicon substrate 2 exists under the situation crooked or in uneven thickness at light-transmitting substrate 4 opposed with it, in order to follow such apparent height inhomogeneities, wishes to be as thin as a certain degree.Particularly, for example, then can connect airtight with light-transmitting substrate 4 by exerting pressure if monocrystalline silicon substrate 2 is the thickness about 50 μ m～500 μ m.The thickness of monocrystalline silicon substrate 2 is if be difficult to guarantee intensity at 50 μ m with next, if more than 500 μ m then the tracing ability with respect to light-transmitting substrate 4 descend.
Then, shown in Fig. 1 (B), the surface is provided with the monocrystalline silicon substrate 2 of jut 10 and the light-transmitting substrate 4 that surface sediment has silicon thin film 12, relatively fits with mutual surface.At this moment, the jut 10 of monocrystalline silicon substrate 2 and the silicon thin film 12 that is formed on the light-transmitting substrate 4 become the state that joins by contact 18.Then, the contact 18 of the jut 10 of monocrystalline silicon substrate 2 be formed under the state that the silicon thin film 12 on the light-transmitting substrate 4 joins, the silicon thin film 12 of light-transmitting substrate 4 is implemented heat treatments.
As silicon thin film 12 is implemented heat-treating methods, can preferably use excimer laser, YAG laser and high frequency etc.For example from face opposition side irradiation excimer laser 14 light-transmitting substrate 4 and silicon thin film 12.Laser radiation is suitable to utilize wavelength for example for 308nm, the pulse duration XeCl pulsed excimer laser for 100ns～300ns, reaches 0.4～1.5J/cm according to energy density
2About mode carry out.By carry out laser radiation under such condition, the laser major part of irradiation is absorbed at the near surface of silicon thin film 12.This is because the absorption coefficient of the uncrystalline silicon that XeCl pulsed excimer Wavelength of Laser (308nm) is located is that 0.139nm-1 is bigger.
Condition by so suitable selection laser radiation, make and to be positioned near the jut 10 the semiconductor film that contains crystalline component fusion fully on whole film thickness direction, must remain the part of non-molten condition to a certain degree, on the other hand, be positioned near silicon thin film 12 fusion fully on whole film thickness direction in jut 10 zones in addition.Thus, near the at first beginning contact 18 of jut 10 of the crystal growth of the silicon after the laser radiation is to the near surface of silicon thin film 12, promptly the part of approximate complete molten condition is carried out.In addition, heat treatment can be carried out several times.Thus, because crystal growth takes place, therefore can further produce above-mentioned phenomenon in repeatedly.
Then, shown in Fig. 2 (A), being implemented the silicon thin film 12 moment fusion after the heat treatment, then, in the process that the silicon thin film 12 of fusion solidifies in heat release (cooling), is the border with grain boundary 24, becomes a plurality of crystalline silicons 16 as a plurality of near single grains mutually.At this moment, because the part that the jut 10 of silicon thin film 12 and monocrystalline silicon substrate 2 joins is preferentially carried out heat release (cooling) from contact 18 beginnings, be that starting point is carried out crystal growth therefore with contact 18.This is because when silicon thin film 12 cooling, heat diffuse through air, vacuum, glass material etc., from the preferential cooling of contact 18 beginnings as the jut 10 of the monocrystalline silicon substrate 2 of the high silicon materials of thermal conductivity.Because resulting crystalline silicon 16 begins to carry out crystal growth from contact 18 respectively independently, be polysilicon membrane strictly speaking therefore.But because all juts 10 all have identical crystallization direction, the crystalline silicon 16 that is therefore obtained is polycrystalline, but has same direction.Formed the single crystal-like silicon thin film 20 that constitutes by this crystalline silicon 16 as the single crystal-like semiconductive thin film.
Fig. 3 is from observe the figure of the state of this moment perpendicular to the direction of 4 of light-transmitting substrates.As shown in Figure 3, be starting point with the contact 18 of each jut 10, grown crystal silicon 16.There is boundary Rmax in the distance that crystalline silicon 16 can be grown along direction in length and breadth, is set in below the 2Rmax by the interval with jut 10, and each crystalline silicon 16 can be that the border engages with grain boundary 24, can cover approximate whole of 4 of light-transmitting substrates fully.In other words, although have grain boundary 24 between each crystalline silicon 16,, therefore approximate identical with the situation that does not have grain boundary 24 on crystal structure because mutual crystal orientation is identical.
Therefore, though silicon thin film 12 is polycrystalline, the film that obtains becomes the single crystal-like silicon thin film 20 with same orientation.For example, jut 10 forms at interval the cylinder of 0.1 μ m～5 μ m left and right sides diameters or square with several～tens μ m on monocrystalline silicon substrate 2.The epitaxial growth of silicon thin film 12 takes place independently from each jut 10, but since as the contact 18 of all juts 10 of starting point on the surface of identical monocrystalline silicon substrate 2, therefore also identical from its grain arrangement that begins to grow.So, can obtain in 4 whole of light-transmitting substrates, to have the single crystal-like silicon thin film 20 as the single crystal-like semiconductive thin film of equidirectional.
By silicon thin film 12 is carried out laser radiation, be starting point with the contact 18 of jut 10, make silicon thin film 12 fusion-crystallizations form crystalline silicon 16.Thus, the contact 18 that has formed with jut 10 is the crystalline silicon 16 at center, particularly, has formed the silicon fiml of the near single that the crystal grain by big particle diameter constitutes.When this fusion crystalization, play the effect of the crystal orientation of adjusting crystal by the contact 18 that makes jut 10, thereby can be controlled at specific direction with the crystal orientation of crystalline silicon 16 is approximate.
At last, shown in Fig. 2 (B), monocrystalline silicon substrate 2 is separated with single crystal-like silicon thin film 20, the single crystal-like silicon thin film 20 that acquisition is made of crystalline silicon 16, thus the manufacturing process of semiconductive thin film finishes.Like this,, monocrystalline silicon substrate 2 is separated with light-transmitting substrate 4, then can on light-transmitting substrate 4, obtain high-quality single crystal-like silicon thin film 20 if on light-transmitting substrate 4, formed after the single crystal-like silicon thin film 20.Therefore, can on light-transmitting substrate 4, obtain single crystal-like silicon thin film 20.Because being the crystalline silicon 16 in the scope at center by the contact 18 that is formed on approximate jut 10 with monocrystalline silicon substrate 2, resulting single crystal-like silicon thin film 20 constitutes, therefore, have the big and crystal orientation Be Controlled of crystal grain, in fact with same excellent semiconducting behavior such as monocrystalline silicon or SOI.And owing to can correctly control the position of crystal growth portion, therefore only the necessary part on light-transmitting substrate 4 obtains high-quality single crystal-like silicon thin film 20 effectively.In addition, used monocrystalline silicon substrate 2 once can use repeatedly at after separating.
Fig. 4 and Fig. 5 are the process charts that expression is used to make the method that the substrate separation circuit of Fig. 2 (B) carries out easily.Fig. 4 is the example that has formed thin oxide film thereon 22 on the surface of the monocrystalline silicon substrate 2 that is provided with jut 10.At first, shown in Fig. 4 (A), form thin oxide film thereon 22 on the surface of the monocrystalline silicon substrate 2 that is provided with jut 10.If oxide film thereon 22 is blocked up, then can hinder the epitaxial growth of silicon thin film 12, be preferably set to 1nm～100nm, more preferably be set at the thickness about 1nm～10nm.
Then, shown in Fig. 4 (B),, therefore can begin the epitaxial growth of silicon thin films 12 from the contact 26 of this oxide film thereon 22 because oxide film thereon 22 becomes the crystal structure in the orientation that has reflected original monocrystalline silicon.Thus, formed the single crystal-like silicon thin film 20 that constitutes by crystalline silicon 16.
Then, shown in Fig. 4 (C),, for example use the HF aqueous solution etc. to remove oxide film thereon 22 if in the separation circuit of monocrystalline silicon substrate 2 and light-transmitting substrate 4, then monocrystalline silicon substrate 2 with become easy separating of light-transmitting substrate 4.
In addition, as shown in Figure 5, make the surface of monocrystalline silicon substrate 30 become porous matter monocrystalline silicon layer 32 in advance, the jut 34 that porous matter shape is set at porous matter monocrystalline silicon layer 32 also is an effective method.Jut 34 its crystallization directions of porous matter shape are identical with original monocrystalline silicon substrate 30, so the epitaxial growth of silicon thin film 12 can become easy.And, because when monocrystalline silicon substrate 30 separates with light-transmitting substrate 4, can be by the jut 34 of etching porous matter shape, or carry out mechanical separation, therefore easily separating single crystal silicon substrate 30 and light-transmitting substrate 4.
At first, shown in Fig. 5 (A), electrical erosion is for example implemented on the surface of monocrystalline silicon substrate 30 handled, form porous matter monocrystalline silicon layer 32.
Then, shown in Fig. 5 (B), porous matter monocrystalline silicon layer 32 is processed as jut 34.
Then, shown in Fig. 5 (C), be starting point with the contact 36 of jut 34, form the single crystal-like silicon thin film 20 that constitutes by crystalline silicon 16.
Then, shown in Fig. 5 (D), when monocrystalline silicon substrate 30 separates with light-transmitting substrate 4, by jut 34 (porous matter monocrystalline silicon layer 32) being carried out chemical etching or mechanically destroys, thus easily separating single crystal silicon substrate 30 and light-transmitting substrate 4.
Fig. 6 and Fig. 7 are expression is provided with the operation of jut to monocrystalline silicon substrate 38 figure.The part of Fig. 6 (A)～(C) monocrystalline silicon substrate 38 that to be expression expose the predetermined pattern shape of the resist layer 40 from monocrystalline silicon substrate 38 by wet etching is processed, and forms the monocrystalline silicon substrate 42 that is provided with jut 44.The part of Fig. 7 (A)～(C) monocrystalline silicon substrate 38 that to be expression expose the predetermined pattern shape of the resist layer 46 from monocrystalline silicon substrate 38 by anisotropic dry etch is processed, and forms the monocrystalline silicon substrate 48 that is provided with jut 50.
As mentioned above, in the manufacture method of the semiconductive thin film of present embodiment, can on light-transmitting substrate 4, obtain high-quality single crystal-like silicon thin film 20.The single crystal-like silicon thin film of making according to the manufacture method of the semiconductive thin film of present embodiment 20 as semiconductive thin film, owing to all have identical grain arrangement in all positions, therefore, has same excellent semiconducting behavior in fact with monocrystalline silicon or SOI etc.Here, be that example is illustrated with the most general silicon, but raw material are not limited to silicon on the principle, can be the material that germanium, gallium, GaAs etc. can be applicable to various semiconductor source materials.Here, in this manual, " near single grain " not only refers to the situation that crystal grain is single, even also comprise approaching therewith state, just to have made up its quantity of a plurality of crystal also less, from the viewpoint of the character of semiconductive thin film, have and the equal character of semiconductive thin film that forms by near single.
Fig. 8 is the figure of manufacture method of the semiconductor element of the expression semiconductive thin film that utilized present embodiment.Operation when the single crystal-like silicon thin film 20 that utilizes present embodiment is formed thin-film transistor 6 as semiconductor element describes.At first, prepare to be formed with the light-transmitting substrate 4 of single crystal-like silicon thin film 20.
Then, shown in Fig. 8 (A), single crystal-like silicon thin film 20 is carried out patterning, remove the unwanted part of formation of thin-film transistor, form single crystal-like silicon thin film 52.For example, form and do not comprise grain boundary 24 (with reference to Fig. 3).
Then, shown in Fig. 8 (B),, become embrane method, form silicon oxide film 54 by electron cyclotron resonace PECVD method (ECR-PECVD method) or PECVD method etc. at the upper surface of light-transmitting substrate 4 and single crystal-like silicon thin film 52.This silicon oxide film 54 is as the gate insulating film of thin-film transistor and play a role.
Then, shown in Fig. 8 (C), after the electric conductor membrane that has formed tantalum, aluminium etc. by one-tenth embrane methods such as sputtering methods, carry out patterning, thereby form gate electrode 56 and grid wiring film (not shown).Then, with this gate electrode 56 is mask, injects the impurity element that becomes donor (donor) or acceptor (acceptor), promptly carries out so-called self-adjustment ion and injects, thus, in single crystal-like silicon thin film 52, form source region 58, drain region 60 and active region 62.For example, in the present embodiment, inject phosphorus (P), then, the XeCl excimer laser is adjusted into 400mJ/cm as impurity element
2About energy density, and shine, make the impurity element activate, thereby make the thin-film transistor of N type.In addition, also can replace laser radiation and by under the temperature about 250 ℃～400 ℃, heat-treating the activate of implementing impurity element.
Then, shown in Fig. 8 (D), become embrane method by PECVD method etc., forming thickness at the upper surface of silicon oxide film 54 and gate electrode 56 is silicon oxide film 64 about 500nm.Next, each of perforation silicon oxide film 54,64 forms the contact hole that arrives source region 58 and drain region 60 respectively, by one-tenth embrane methods such as sputtering methods, in these contact holes, imbed electric conductor such as aluminium, tungsten and carry out patterning, thereby form source electrode 66 and drain electrode 68.Thus, shown in Fig. 8 (D), constitute, promote the nickel film as crystal promotion film of the crystalization of semiconductor film by material containing metal matter, be configured near the bottom of jut, utilization is that starting point is carried out the single crystal-like silicon thin film 52 that the fusion crystalization forms with the jut, has obtained being formed with the thin-film transistor 6 of active region 62 grades.In addition, the processing method that does not describe in above operation is that known method gets final product.
Be used for the active region 62 of thin-film transistor 6 by single crystal-like silicon thin film 52, can form the high performance thin film transistor that cut-off current is few, mobility is big present embodiment.In addition, in the present embodiment, be not limited to various transistors or diode, resistance, inductance, capacitor, other active element or passive component, " semiconductor element " comprises the element that can make by the combination of N type and P type semiconductor.
Fig. 9 is the figure of semiconductor device that the semiconductor element of present embodiment has been used in expression.Use the OLED display 100 of the film crystal pipe manufacturer of present embodiment as semiconductor device.The processing method of each operation is that known method gets final product.
As shown in Figure 9, OLED display 100 constitutes configuration pixel region 112 in viewing area 110.Pixel region 112 has used the thin-film transistor that drives organic EL luminous element.Thin-film transistor has used the thin-film transistor of making by the manufacture method of above-mentioned execution mode.114 provide light emitting control line (Vgp) and write control line to each pixel region from the drive area.116 provide electric current line (Idata) and power line (Vdd) to each pixel region from the drive area.Write control line and constant-current contour Idata by control, carry out current programmed (currentprogramming) at each pixel region, Vgp controls luminous by control light emitting control line.In addition, also can use thin-film transistor of the present invention to drive area 114 and 116.And semiconductive thin film of the present invention is not limited to above-mentioned example, can use in can using all semiconductor devices of semiconductor element.For example, can effectively be applied to LCD, storage device, arithmetic unit etc. in addition.
If the semiconductor device of the device that manufacturing constitutes as possessing the semiconductor element of present embodiment (for example, LCD, OLED display, storage device and arithmetic unit etc.) devices such as integrated circuit, then can make the device of the integrated circuit that comprises very high performance and homogeneous.In addition, in the present embodiment, " semiconductor device " is meant the device that comprises semiconductor element and constitute, and for example is the device that comprises integrated circuit.By using the single crystal-like semiconductive thin film of present embodiment, can obtain semiconductor element, the semiconductor device of electrical characteristic excellence.In addition, using under the situation of material with light-proofness as crystal promotion film, also can be to the part that constitutes by the single crystal-like semiconductive thin film of semiconductor element (for example by crystal promotion film shading light, if thin-film transistor then is active region etc.) incident, but also can prevent the electromotive force that causes because of light stimulus or the generation of dark current to the single crystal-like semiconductive thin film.
Claims (13)
1. the manufacture method of a semiconductor element comprises:
First operation prepares to be provided with first substrate of a plurality of juts that are formed on the surface and second substrate that the surface is formed with semiconductor film; With
Second operation makes under described a plurality of jut and the described semiconductor film state of contact, and described semiconductor film is implemented heat treatment.
2. the manufacture method of semiconductor element according to claim 1 is characterized in that,
In described second operation, make described semiconductor film fusion by described heat treatment.
3. the manufacture method of semiconductor element according to claim 1 and 2 is characterized in that,
By carrying out described second operation, in described semiconductor film, form a plurality of single die accordingly with described a plurality of juts.
4. according to the manufacture method of any described semiconductor element in the claim 1～3, it is characterized in that,
Also comprise the 3rd operation, after described second operation, described first substrate is separated with described second substrate.
5. according to the manufacture method of any described semiconductor element in the claim 1～4, it is characterized in that,
Described a plurality of jut is formed by monocrystalline silicon.
6. according to the manufacture method of any described semiconductor element in the claim 1～5, it is characterized in that,
Described a plurality of jut comprises the oxide-film on surface separately that is formed at described a plurality of juts.
7. the manufacture method of semiconductor element according to claim 4 is characterized in that,
Described a plurality of jut comprises the oxide-film on surface separately that is formed at described a plurality of juts,
In described the 3rd operation, remove described oxide-film.
8. according to the manufacture method of any described semiconductor element in the claim 1～7, it is characterized in that,
Each of described a plurality of juts is formed by porous matter.
9. the manufacture method of semiconductor element according to claim 4 is characterized in that,
Each of described a plurality of juts is formed by porous matter, removes described a plurality of jut in described the 3rd operation.
10. according to the manufacture method of any described semiconductor element in the claim 1～9, it is characterized in that,
Described second operation comprises following operation: from opposed one side of the face with being formed with described semiconductor film of described second substrate, to described semiconductor film irradiating laser.
11. a semiconductor element is by the manufacture method manufacturing of any described semiconductor element in the claim 1～10.
12. the manufacture method of a semiconductor device comprises the manufacture method of any described semiconductor element in the claim 1～11.
13. a semiconductor device is by the manufacture method manufacturing of the described semiconductor device of claim 12.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111136575A (en) * | 2018-11-05 | 2020-05-12 | 三星显示有限公司 | Substrate supporting apparatus and method of polishing substrate using the same |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111136575A (en) * | 2018-11-05 | 2020-05-12 | 三星显示有限公司 | Substrate supporting apparatus and method of polishing substrate using the same |
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