CN101043062A - Seat structure of diode illuminating device and method for manufacturing diode illuminating device - Google Patents
Seat structure of diode illuminating device and method for manufacturing diode illuminating device Download PDFInfo
- Publication number
- CN101043062A CN101043062A CNA2006100654788A CN200610065478A CN101043062A CN 101043062 A CN101043062 A CN 101043062A CN A2006100654788 A CNA2006100654788 A CN A2006100654788A CN 200610065478 A CN200610065478 A CN 200610065478A CN 101043062 A CN101043062 A CN 101043062A
- Authority
- CN
- China
- Prior art keywords
- heat conduction
- diode
- conduction body
- backlight unit
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Abstract
The invention discloses a seat structure and manufacturing method of diode irradiance device, thereinto the irradiance device includes seat structure, diode chip, light getting layer and lens, the seat structure possesses heat-conducting noumenon, plastic insulator and lead rack. Thereinto the plastic insulator is combined with the heat-conducting noumenon via the first mould, and then it is produced via the heat-conducting noumenon or the first sprue of the first mould in effluence moulding mode and the lead rack is coated in the plastic insulator. The lens are produced by combining the heat-conducting noumenon which is after connection from diode chip to lead rack and coating of light getting layer with the second mould.
Description
Technical field
The present invention relates to a kind of base structure and manufacture method for diode light-emitting device of diode illuminating device, relate in particular to manufacture method for diode light-emitting device and structure thereof that a kind of high power illumination is used.
Background technology
In recent years, because the improvement that the product performance of lumination of light emitting diode efficient continues, grow up significantly in the market that makes light-emitting diode use.So light-emitting diode can have so high Market Growth rate, main growth power has two, at first is light-emitting diode and cold cathode ray tube (Cold Cathode Fluorescent Lamp in light emitting diode indicator backlight market; Substituting CCFL); Next is alternative between light-emitting diode and incandescent lamp bulb or fluorescent lamp in general light source market.In above-mentioned two growth power markets, light-emitting diode all has environmental protection, economize can and the good product advantage of color representation, wherein as the environmental regulation of " European Union's forbidding in 2006 mercury ", the main cause of driven for emitting lights diode Market Growth especially.
The package structure for LED of No. 20050135105 case of U.S. Patent Publication, it comprises: a reference data, it stretches out in the insulating heat-conductive body of package structure for LED and a radiator is produced a location relation.Diode chip for backlight unit is fixedly arranged on the radiator.So reference data provides diode chip for backlight unit one position of being located in the package structure for LED to produce reference data.Reference data can be embedded in the radiator or be integrally formed with radiator.In addition, the package structure for LED of No. 20050135105 patents can comprise that one inserts the lead foot of insulating heat-conductive body in the horizontal expansion mode, and lead foot extends towards the direction of diode chip for backlight unit again, to reduce the vertical range between lead foot and diode chip for backlight unit.Owing to use the relation of insulating heat-conductive body, cause the heat radiation of diode chip for backlight unit only can dispel the heat, so area of dissipation will be seriously influenced by radiator.
TaiWan, China intellectual property office application for a patent for invention case is a kind of diode illuminating device number No. 094129393.It comprises: a base structure, at least one diode chip for backlight unit, are got photosphere and lens.Wherein base structure comprises again: a body, at least one insulator and at least one lead frame.Body is made with the good metal material of heat conduction, and significantly increasing area of dissipation, and the insulator of base structure is made with the material of a glass, a pottery, plastics or a bakelite.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of base structure of diode illuminating device, improving existing is the problem of the not good and complex process of the package structure for LED radiating efficiency of body with plastics, coated by the plastic insulation that lead frame is changed with ejection formation, make being incorporated on the heat conduction body that it can be more firm, body with diode illuminating device, change with the good metal material of heat conduction and made, with the metal is the heat conduction body, its heatproof height, it is good to dispel the heat, the component package reliability increases, to make the area of dissipation of package structure for LED significantly increase, and then the diode chip for backlight unit that makes diode illuminating device is when work, can obtain better radiating effect, perhaps also can make diode illuminating device of the present invention can be applicable to more powerful product specification use.
Another object of the present invention is for providing a kind of manufacture method for diode light-emitting device, make plastic insulation with injection molding method, utilize metal and plastics to penetrate the processing combination technology, carry out the making of its encapsulation parent of light-emitting diode, but can reach the good LED package that reaches the polycrystalline one of heat radiation, simultaneously can make the structure behavior between plastic insulation, lead frame and heat conduction body more firm.
For achieving the above object, the invention provides a kind of base structure of diode illuminating device, it comprises: a heat conduction body, in the heat conduction body, be formed with a chip base, and the housing periphery at the heat conduction body is formed with at least one breach again; At least one plastic insulation is fixedly arranged on each breach; And at least one lead frame, the independent and electrically connect not mutually of each lead frame, each lead frame all is coated in the plastic insulation and both ends and protrudes from plastic insulation again.
And, the invention provides a kind of manufacture method of diode illuminating device, it comprises the following steps: to provide a heat conduction body, and heat conduction body periphery is formed with at least one breach; At least one lead frame is provided, is arranged in each breach; One first mould is provided, it is incorporated on the heat conduction body, and carry out the super work of perfusion of a plastic insulation and make lead frame and heat conduction body electrical isolation by one group of first material hole; At least one diode chip for backlight unit is set in a chip base of heat conduction body, again each diode chip for backlight unit is electrically connected at lead frame by couple of conductor; Get photosphere with one, be covered on the diode chip for backlight unit of having finished wire bond in the chip base; One second mould is provided, and second mould has the groove of a lens-type body; Filling in order to a lens colloid of making lens in the groove of second mould; Be connected with lead between lead frame and finish and get the heat conduction body that photosphere covers finishing diode chip for backlight unit, be incorporated on second mould; And after the lens colloid solidification, the mould that moves back that carries out second mould surpasses work.
The present invention provides a kind of manufacture method for diode light-emitting device again, and it comprises the following steps: to provide a heat conduction body with one group of second material hole, and heat conduction body periphery is formed with at least one breach; At least one lead frame is provided, is arranged in each breach; One first mould is provided, it is incorporated on the heat conduction body, and carry out the super work of perfusion of a plastic insulation and make lead frame and heat conduction body electrical isolation by one group of first material hole; At least one diode chip for backlight unit is set in a chip base of heat conduction body, with each diode chip for backlight unit, all is electrically connected at lead frame again by couple of conductor; Get photosphere with one, be covered on the diode chip for backlight unit of having finished wire bond in the chip base; One second mould is provided, and second mould has the groove of a lens-type body; Be connected with lead between lead frame and finish and get the heat conduction body that photosphere covers finishing diode chip for backlight unit, be incorporated on second mould; To carry out super work of form of lens to second mould by second material hole in order to make a lens colloid of lens; And after the lens colloid solidification, move back the super work of mould.
The present invention provides a kind of manufacture method for diode light-emitting device again, and it comprises the following steps: to provide a heat conduction body with one group of second material hole, and heat conduction body periphery is formed with at least one breach; At least one lead frame is provided, is arranged in each breach; One first mould is provided, it is incorporated on the heat conduction body, and carry out the super work of perfusion of a plastic insulation and make lead frame and heat conduction body electrical isolation by one group of first material hole; At least one diode chip for backlight unit is set in a chip base of heat conduction body, again each diode chip for backlight unit is electrically connected at lead frame by couple of conductor; Get photosphere with one, be covered on the diode chip for backlight unit of having finished wire bond in the chip base; One lens lid is provided, and the lens lid is a hollow housing; Be connected with lead between lead frame and finish and get the heat conduction body that photosphere covers finishing diode chip for backlight unit, combine with the lens lid; To carry out super work of form of lens to the hollow part of lens lid by second material hole in order to make a lens colloid of lens; And make the lens colloid solidification that is poured in the lens lid.
By enforcement of the present invention, can reach following progressive effect at least:
One, uses the heat conduction body of metal, have the heatproof height, heat radiation is good, the effect that the component package reliability increases.
Two, the plastic insulation of micro-ejection formation, fashionable when itself and heat conduction bulk junction, can make the volume maximization of heat conduction body.
Three, lead frame can use special-shaped plate to make, and can reach the length that reduces routing between lead frame and diode chip for backlight unit, reduce the use of gold thread so that routing technology is more simple and effect such as increase routing reliability.
Four, lead frame can use special-shaped plate to make, and can increase thermal capacity and heat-conducting area, therefore reaches the encapsulation of polycrystalline light emitting diode in a monomer easily.
Five, the use of first mould and second mould makes and can produce the tool market competitiveness in a large number when making.
Describe the present invention below in conjunction with the drawings and specific embodiments, but not as a limitation of the invention.
Description of drawings
Fig. 1 is a kind of tool first material hole of the present invention but does not have the heat conduction body of second material hole and lead frame to implement illustration three-dimensional the decomposition;
Fig. 2 is a kind of tool first material hole of the present invention but does not have the heat conduction body of second material hole and lead frame solid to scheme in conjunction with the embodiments;
Fig. 3 is a kind of tool first material hole of the present invention but does not have the solid of heat conduction body, lead frame and the plastic insulation of second material hole to scheme in conjunction with the embodiments;
Fig. 4 is a kind of tool first material hole of the present invention but does not have the base structure solid of second material hole to implement illustration;
Fig. 5 is a kind of tool first material hole of the present invention but does not have the diode illuminating device solid of second material hole to implement illustration;
Fig. 6 is for to analyse and observe the enforcement illustration along the diode illuminating device of A-A hatching line among Fig. 5;
Fig. 7 implements illustration for the solid of looking up of the diode illuminating device of a kind of tool first material hole of the present invention and second material hole;
Fig. 8 is for to analyse and observe the enforcement illustration along the diode illuminating device of B-B hatching line among Fig. 7;
Fig. 9 is a kind of diode chip for backlight unit of the present invention, and it is made on the connecting support with flip chip earlier, and then connecting support is fixedly arranged on cutaway view in the chip base;
Figure 10 is a kind of chip base of the present invention, and it further contains local amplification of analysing and observe of a light-wave conversion layer implements illustration.
The solid that Figure 11 is incorporated into a heat conduction body for a kind of first mould of the present invention is schemed in conjunction with the embodiments;
Figure 12 is a kind of base structure of the present invention and illustration is implemented in the decomposition of second mould of filling lens colloid;
Figure 13 is a kind of base structure of the present invention and the figure in conjunction with the embodiments of second mould of filling lens colloid;
Figure 14 is the embodiment flow chart of a kind of manufacture method for diode light-emitting device one of the present invention;
Figure 15 decomposes the enforcement illustration for a kind of base structure and analysing and observe of second mould with one group of first material hole and one group of second material hole of the present invention;
Figure 16 for a kind of base structure with one group of first material hole and one group of second material hole of the present invention with after second mould combine, pour into analysing and observe in conjunction with the embodiments of lens colloid and scheme;
Figure 17 is the embodiment flow chart of a kind of manufacture method for diode light-emitting device two of the present invention;
Figure 18 decomposes the enforcement illustration for a kind of base structure and analysing and observe of lens lid with one group of first material hole and one group of second material hole of the present invention;
Figure 19 schemes for a kind of base structure and analysing and observe in conjunction with the embodiments of lens lid with one group of first material hole and one group of second material hole of the present invention;
Figure 20 is the embodiment flow chart of a kind of manufacture method for diode light-emitting device three of the present invention.
Wherein, Reference numeral:
30: diode illuminating device 40,40 ': base structure
41,41 ': heat conduction body 411: chip base
412: concave volume 413: end difference
414: concave part 416: breach
418: the second material holes of 417: the first material holes
42: plastic insulation 43: lead frame
50: diode chip for backlight unit 51: lead
60: get photosphere 61: light-wave conversion layer
70: lens 71: the lens colloid
72: 81: the first moulds of lens lid
M1: manufacture method for diode light-emitting device one
M2: manufacture method for diode light-emitting device two
M3: manufacture method for diode light-emitting device three
Embodiment
For making purpose of the present invention, structural feature and function thereof there are further understanding, cooperate related embodiment and accompanying drawing to be described in detail as follows now:
＜diode illuminating device 30 〉
As shown in Figure 1, for a kind of tool first material hole 417 of the present invention but do not have the heat conduction body 41 of second material hole 418 and lead frame to implement illustrations 43 three-dimensional decomposition.As shown in Figure 2, for a kind of tool first material hole 417 of the present invention but do not have the heat conduction body 41 of second material hole 418 and lead frame 43 solids to scheme in conjunction with the embodiments.As shown in Figure 3, for a kind of tool first material hole 417 of the present invention but there is not the solid of heat conduction body 41, lead frame 43 and the plastic insulation 42 of second material hole 418 to scheme in conjunction with the embodiments.As shown in Figure 4, for a kind of tool first material hole 417 of the present invention but there are not the three-dimensional illustrations of implementing of base structure 40 of second material hole 418.As shown in Figure 5, for a kind of tool first material hole 417 of the present invention but there is not the three-dimensional illustration of implementing of diode illuminating device of second material hole 418.As shown in Figure 6, for analysing and observe the enforcement illustration along the diode illuminating device of A-A hatching line among Fig. 5.As shown in Figure 7, be the three-dimensional illustration of implementing of looking up of the diode illuminating device of a kind of tool first material hole 417 of the present invention and second material hole 418.As shown in Figure 8, for analysing and observe the enforcement illustration along the diode illuminating device of B-B hatching line among Fig. 7.
Present embodiment is a kind of diode illuminating device 30 structures, it is with the heat conduction body 41 of diode illuminating device 30,41 ', made with the metal material that heat conduction is good, significantly to increase area of dissipation, so that the diode chip for backlight unit 50 of diode illuminating device 30 can obtain better radiating effect when work.Make plastic insulation 42 with injection molding method in addition, will be fixedly arranged on the heat conduction body 41,41 ' behind the plastic insulation 42 coated wire framves 43, so that plastic insulation 42, lead frame 43 and heat conduction body 41, the structure behavior between 41 ' is more firm.
The diode illuminating device 30 of present embodiment, it comprises: a base structure 40,40 ', at least one diode chip for backlight unit 50, are got photosphere 60 and lens 70.Base structure 40 wherein again, 40 ' has: a heat conduction body 41,41 ', at least one plastic insulation 42 and at least one lead frame 43.Heat conduction body 41,41 ', plastic insulation 42 and lead frame 43 parts of diode illuminating device 30 base structures 40,40 ' at first are described.
Be formed with a chip base 411 in the heat conduction body 41,41 ', the heat conduction body 41 again, and 41 ' housing periphery is formed with at least one breach 416.Chip base 411 has a concave volume 412, and the making space of concave volume 412 in order to diode chip for backlight unit 50 to be provided and to get photosphere 60.The periphery of concave volume 412 can further form an end difference 413.Heat conduction body 41,41 ' the periphery that is positioned at chip base 411 is provided with a concave part 414, concave part 414 can be for a ring groove or only for non-ring groove that lead 51 can be applied smoothly (non-ring groove is positioned at the partial groove at lead position, and figure does not show).
When present embodiment when the embodiment with " diode illuminating device 30 manufacture methods one M1 " is made, in the concave part 414 of heat conduction body 41, can further be filled with a filling colloid, can alveolate problem produce when avoiding lens 70 to make, and influence the quality of lens 70.
As shown in Figures 7 and 8, diode illuminating device 30 when present embodiment, when being made, one group of second material hole 418 must be set on the heat conduction body 41 ' with the embodiment of diode illuminating device 30 manufacture methods, two M2 or diode illuminating device 30 manufacture methods three M3.Second material hole 418 is run through by the bottom of heat conduction body 41 ', and is connected with concave part 414, when making lens 70, in order to make the lens colloid 71 of lens 70, can carry out super work of form of lens 70 by second material hole 418.
Then illustrate diode illuminating device 30 diode chip for backlight unit 50, get photosphere 60 and lens 70 parts.
Diode chip for backlight unit 50 can be made up by red, blue and green diode chip for backlight unit 50, but is not limited thereto the diode chip for backlight unit 50 of three kinds of colors.Each diode chip for backlight unit 50 is fixedly set in the chip base 411, and each diode chip for backlight unit 50, all is electrically connected at one group of lead frame 43 by couple of conductor 51.Wherein each diode chip for backlight unit 50 has a positive electrode and a negative electrode, and each positive electrode all is electrically connected at a lead frame 43 by a lead 51, and all negative electrodes then can be electrically connected at the lead frame 43 that another is shared by another lead 51.
As shown in Figure 9, be a kind of diode chip for backlight unit 50 of present embodiment, it is made on the connecting support in flip-chip (flipchip) mode earlier, and then connecting support is fixedly arranged on cutaway view in the chip base 411.Except above-mentioned diode chip for backlight unit 50 sets firmly the mode, each diode chip for backlight unit 50, also can be made on the connecting support 90 with flip chip earlier, and then connecting support 90 is fixedly arranged in the chip base 411, and each diode chip for backlight unit 50 is all further by being electrically connected at lead frame 43 with the pair of conductive plate of diode chip for backlight unit 50 electrically connects via lead 51 on the connecting support 90.Can put many diode chip for backlight unit 50 with flip chip, circuit on the connecting support 90 can be arranged for the mode of series, parallel or mixing again, and then connecting support 90 and lead frame 43 being electrically connected by lead 51, the manufacturing technology and the wiring technique on the connecting support 90 of relevant flip-chip are the application of prior art.
As shown in figure 10, be a kind of chip base 411 of the present invention, it further contains local amplification of analysing and observe of a light-wave conversion layer 61 implements illustration.Get photosphere 60 and be an a kind of transparent resin of high printing opacity or a transparent colloid, it is in order to be covered on the diode chip for backlight unit 50 of having finished lead 51 bindings in the chip base 411.When the diode chip for backlight unit in the chip base 411 50 is made up of the diode chip for backlight unit 50 of two kinds of glow colors at least, then be covered in getting photosphere 60 and can further mix a spread powder on the diode chip for backlight unit 50.Again when the diode chip for backlight unit in the chip base 411 50 is made up of the diode chip for backlight unit 50 of at least one blue light-emitting, then be covered in the getting on the photosphere 60 of diode chip for backlight unit 50, can further be coated with a light-wave conversion layer 61, light-wave conversion layer 61 is in particular a phosphor powder colloid again, and when getting photosphere 60 with light-wave conversion layer 61 making, can be controlled the thickness of getting photosphere 60 and light-wave conversion layer 61 by the end difference 413 in the concave volume 412 of chip base 411.
＜diode illuminating device 30 manufacture methods one M1 〉
As shown in figure 11, the solid that is incorporated into a heat conduction body 41 for a kind of first mould 81 of the present invention is schemed in conjunction with the embodiments.As shown in 12, for illustration is implemented in a kind of base structure 40 of the present invention and the decomposition of second mould of filling lens colloid.As shown in figure 13, be a kind of base structure 40 of the present invention and the figure in conjunction with the embodiments of second mould 82 of filling lens colloid 71.
As shown in figure 14, be the embodiment flow chart of a kind of manufacture method for diode light-emitting device one M1 of the present invention.Diode illuminating device 30 manufacture methods of the embodiment of the invention, it comprises the following steps:
Step S11: a heat conduction body 41 is provided, and it is as the heat conduction body 41 of diode illuminating device structure 30 embodiment, and heat conduction body 41 peripheries are formed with at least one breach 416, does not need the setting of any second material hole 418 again on the heat conduction body 41.
Step S12: at least one lead frame 43 is provided, and lead frame 43 is made special-shaped plate with impact style, then with the lead frame after the punch forming 43, is arranged in each breach 416.
Step S13: one first mould 81 is provided, it is incorporated on the heat conduction body 41, and undertaken by one group of first material hole 417 that the perfusion of a plastic insulation 42 is super to be done and lead frame 43 is coated by plastic insulation 42, thereby can with heat conduction body 41 electrical isolation.Wherein first material hole 417 can be arranged on the heat conduction body 41 or first mould 81.
Step S14: at least one diode chip for backlight unit 50 is set in the chip base 411 of heat conduction body 41, with each diode chip for backlight unit 50, all is electrically connected at lead frame 43 again by couple of conductor 51.Each above-mentioned diode chip for backlight unit 50 all has a positive electrode and a negative electrode, and each positive electrode all is electrically connected at a lead frame 43 by a lead 51, and all negative electrodes then can be electrically connected at the lead frame 43 that another is shared by another lead 51.Perhaps diode chip for backlight unit 50, also can further earlier be made in one on connecting support 90 with flip chip, and then connecting support 90 is fixedly arranged in the chip base 411, and each diode chip for backlight unit 50 is all further by being electrically connected at lead frame 43 with the pair of conductive plate of diode chip for backlight unit 50 electrically connects and via lead 51 on the connecting support 90.
The method for placing of relevant diode chip for backlight unit 50 is fixedly arranged on diode chip for backlight unit 50 in the chip base 411 except that utilizing some glue, an elargol or being total to golden mode.Also can utilize high heat conducting base to combine with diode chip for backlight unit 50 earlier, and then be placed in the chip base 411 to be total to gold, soldering or some glue.
When lead 51 that heat conduction body 41 is finished 43 of diode chip for backlight unit 50 and lead frames connect and finish get photosphere 60 and cover after, in the concave part 414 of heat conduction body 41, further filling colloid, make the top of base structure 40 present a smooth plane, so when making lens 70, can reduce the problem in bubble or gap.The colloid of institute's filling again, material does not need strict restriction in principle, but if with lens colloid 71 fillings of making lens 70 it, it be the best in conjunction with effect.
Step S15: get photosphere 60 with one, be covered in and finished in the chip base 411 on the diode chip for backlight unit 50 that lead 51 links.Perhaps when the diode chip for backlight unit in the chip base 411 50 is made up of the diode chip for backlight unit 50 of two kinds of glow colors at least, then can further be coated with a light-wave conversion layer 61 in getting on the photosphere 60.And light-wave conversion layer 61 is made up of a phosphor powder colloid especially.
Step S16: provide one second mould, 82, the second moulds 82 to have the groove of lens 70 type bodies.
Step S17: filling is in order to make the lens colloid 71 of lens 70, in the groove of second mould 82.
Step S18: will finish 43 leads 51 of diode chip for backlight unit 50 and lead frame and be connected and finish and get the heat conduction body 41 that photosphere 60 covers, and be incorporated into and be filled with in order on second mould 82 of making lens 70 lens colloids 71.
Step S19: after lens colloid 71 solidifies, move back the super work of mould at last.
＜diode illuminating device 30 manufacture methods two M2 〉
As shown in figure 15, decompose the enforcement illustration for a kind of base structure 40 ' and analysing and observe of second mould of the present invention with one group of first material hole 417 and one group of second material hole 418.As shown in figure 16, for a kind of base structure 40 ' with one group of first material hole 417 and one group of second material hole 418 of the present invention with after second mould combines, perfusion lens colloid analyse and observe figure in conjunction with the embodiments.The method of present embodiment, one group of second material hole 418 is set on heat conduction body 41 ', then with base structure 40 ' with after second mould 82 combines, then will be in order to make the lens colloid 71 of lens 70, carry out super work of form of lens 70 by 418 pairs second moulds of second material hole 82, by the enforcement of present embodiment method, thereby can effectively promote the efficient that lens 70 combine with base structure 40 '.
As shown in figure 17, be the embodiment flow chart of a kind of manufacture method for diode light-emitting device two of the present invention.Diode illuminating device 30 manufacture methods of present embodiment, it comprises the following steps:
Step S21: provide heat conduction body 41 ' and its periphery with one group of second material hole 418 to be formed with at least one breach 416, it is as described in the heat conduction body 41 ' of diode illuminating device structure 30 embodiment, but different with the embodiment of manufacture method one M1 of diode illuminating device 30 is one group of second material hole 418 to be set on the heat conduction body 41 ' of present embodiment to be necessary member.
Step S22: at least one lead frame 43 is provided, and lead frame 43 is made special-shaped plate with impact style, then with the lead frame after the punch forming 43, is arranged in each breach 416.
Step S23: one first mould 81 is provided, it is incorporated on the heat conduction body 41 ', and carry out super work of perfusion of a plastic insulation 42 by one group of first material hole 417, and lead frame 43 is coated by plastic insulation 42, thus can with heat conduction body 41 ' electrical isolation.Wherein first material hole 417 can be arranged on the heat conduction body 41 ' or first mould 81.(as shown in figure 10)
Step S24: at least one diode chip for backlight unit 50 is set in the chip base 411 of heat conduction body 41 ', again each diode chip for backlight unit 50 all is electrically connected at lead frame 43 by couple of conductor 51.Each above-mentioned diode chip for backlight unit 50 all has a positive electrode and a negative electrode, each positive electrode all is electrically connected at a lead frame 43 by a lead 51, and the negative electrode of all diode chip for backlight unit 50 then is electrically connected at the lead frame 43 that another is shared by another lead 51.Perhaps diode chip for backlight unit 50, also can further earlier be made in one on connecting support 90 with flip chip, and then connecting support 90 is fixedly arranged in the chip base 411, again each diode chip for backlight unit 50 all further by on the connecting support 90 with the pair of conductive plate of diode chip for backlight unit 50 electrically connects, be electrically connected at lead frame 43 via above-mentioned lead 51 again.
The method for placing of relevant diode chip for backlight unit 50 is fixedly arranged on diode chip for backlight unit 50 in the chip base 411 except that utilizing some glue, an elargol or being total to golden mode.Also can utilize high heat conducting base to combine with diode chip for backlight unit 50 earlier, and then be placed in the chip base 411 to be total to gold, soldering or some glue.
Step S25: get photosphere 60 with one, be covered in and finished in the chip base 411 on the diode chip for backlight unit 50 that lead 51 links.Perhaps when the diode chip for backlight unit in the chip base 411 50 is made up of the diode chip for backlight unit 50 of two kinds of glow colors at least, then can further be coated with a light-wave conversion layer 61 in getting on the photosphere 60.And light-wave conversion layer 61 is made up of a phosphor powder colloid especially.
Step S26: provide one second mould, 82, the second moulds 82 to have the groove of lens 70 type bodies.
Step S27: will finish diode chip for backlight unit 50 and be connected with the lead 51 of 43 of lead frames and finish and get the heat conduction body 41 ' that photosphere 60 covers, and be incorporated on second mould 82.
Step S28: will carry out super work of form of lens 70 by 418 pairs second moulds of second material hole 82 in order to make a lens colloid 71 of lens 70.
Step S29: after lens colloid 71 solidifies, move back the super work of mould.
＜diode illuminating device 30 manufacture methods three M3 〉
As shown in figure 18, for decomposing with analysing and observe of lens lid 72, a kind of base structure 40 ' with first material hole 417 and second material hole 418 of the present invention implements illustration.As shown in figure 19, be a kind of the have base structure 40 ' of one group of first material hole 417 and one group of second material hole 418 and the figure in conjunction with the embodiments that analyses and observe of lens lid 72 of the present invention.The method of present embodiment, one group of second material hole 418 is set on heat conduction body 41 ', then with base structure 40 ' with after lens lid 72 combines, then will be in order to make the lens colloid 71 of lens 70, carry out super work of form of lens 70 by 418 pairs second moulds of second material hole 82, by the enforcement of present embodiment method, can effectively promote the efficient that lens 70 combine with base structure 40 '.
As shown in figure 20, be the embodiment flow chart of a kind of manufacture method for diode light-emitting device three of the present invention.Diode illuminating device 30 manufacture methods of the embodiment of the invention, it comprises the following steps:
Step S31: provide heat conduction body 41 ' and its periphery with one group of second material hole 418 to be formed with at least one breach 416, it is as described in the heat conduction body 41 ' of diode illuminating device structure 30 embodiment, but different with the embodiment of diode illuminating device 30 manufacture methods one M1 is one group of second material hole 418 to be set on the heat conduction body 41 ' of present embodiment to be necessary member.
Step S32: at least one lead frame 43 is provided, and lead frame 43 is made special-shaped plate with impact style, then with the lead frame after the punch forming 43, is arranged in each breach 416.
Step S33: one first mould 81 is provided, it is incorporated on the heat conduction body 41 ', and undertaken by one group of first material hole 417 that the perfusion of a plastic insulation 42 is super to be done and lead frame 43 is coated by plastic insulation 42, thereby can with heat conduction body 41 ' electrical isolation.Wherein first material hole 417 can be arranged on the heat conduction body 41 ' or first mould 81.(as shown in figure 10)
Step S34: at least one diode chip for backlight unit 50 is set in the chip base 411 of heat conduction body 41 ', again each diode chip for backlight unit 50 all is electrically connected at lead frame 43 by couple of conductor 51.Each above-mentioned diode chip for backlight unit 50, all have a positive electrode and a negative electrode, each positive electrode all is electrically connected at a lead frame 43 by a lead 51, and the negative electrode of all diode chip for backlight unit 50 then is electrically connected at the lead frame 43 that another is shared by another lead 51.Perhaps diode chip for backlight unit 50, also can further earlier be made in one on connecting support 90 with flip chip, and then connecting support 90 is fixedly arranged in the chip base 411, and each diode chip for backlight unit 50, all further by on the connecting support 90 with the pair of conductive plate of diode chip for backlight unit 50 electrically connects, be electrically connected at lead frame 43 via above-mentioned lead 51 again.
The method for placing of relevant diode chip for backlight unit 50 is fixedly arranged on diode chip for backlight unit 50 in the chip base 411 except that utilizing some glue, an elargol or being total to golden mode.Also can utilize high heat conducting base to combine with diode chip for backlight unit 50 earlier, and then be placed in the chip base 411 to be total to gold, soldering or some glue.
Step S35: get photosphere 60 with one, be covered in and finished in the chip base 411 on the diode chip for backlight unit 50 that lead 51 links.Perhaps when the diode chip for backlight unit in the chip base 411 50 is made up of the diode chip for backlight unit 50 of two kinds of glow colors at least, then can further be coated with a light-wave conversion layer 61 in getting on the photosphere 60.And light-wave conversion layer 61 is made up of a phosphor powder colloid especially.
Step S36: a lens lid 72 is provided, and lens lid 72 is a hollow housing, and it is the semi-finished product of lens 70.
Step S37: will finish lead 51 connections of 43 of diode chip for backlight unit 50 and lead frames and finish the heat conduction body 41 ' of getting photosphere 60 coverings, and combine with lens lid 72.Heat conduction body 41 ' and the mode that lens lid 72 combines after making the end of lens lid 72 and the 41 ' driving fit of heat conduction body and fastening, are the state of close-fitting.After perhaps also can end and the 41 ' driving fit of heat conduction body with lens lid 72, more further in the end and the heat conduction body 41 ' junction of lens lid 72, the coating colloid be to reach airtight effect.
Step S38: will carry out super work of form of lens 70 by the hollow part of 418 pairs of lens lids 72 of second material hole in order to make a lens colloid 71 of lens 70.
Step S39: the lens colloid 71 that is poured in the lens lid 72 is solidified.
Certainly; the present invention also can have other various embodiments; under the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art work as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.
Claims (20)
1. the base structure of a diode illuminating device is characterized in that, comprising:
One heat conduction body is formed with a chip base in this heat conduction body, the housing periphery at the heat conduction body is formed with at least one breach again;
At least one plastic insulation is fixedly arranged on each this breach; And
At least one lead frame, the independent and electrically connect not mutually of each this lead frame, each this lead frame all is coated in this plastic insulation and both ends protrude from this plastic insulation again.
2. the base structure of diode illuminating device according to claim 1 is characterized in that, this heat conduction body further has one group of first material hole.
3. the base structure of diode illuminating device according to claim 1, it is characterized in that, this heat conduction body is a metal material, and this metal material is that a gold medal or a silver medal or an aluminium or a bronze medal or an iron or a molybdenum or a nickel or one are by any two or two or more synthetic metal material in gold, silver, aluminium, copper, iron, molybdenum, the nickel again.
4. the base structure of diode illuminating device according to claim 1 is characterized in that, this heat conduction body is provided with a concave part at the periphery of this chip base.
5. the base structure of diode illuminating device according to claim 1 is characterized in that, this chip base has a concave volume.
6. the base structure of diode illuminating device according to claim 5 is characterized in that, the periphery of this concave volume forms an end difference.
7. the base structure of diode illuminating device according to claim 1 is characterized in that, this lead frame be an end upwards and the special-shaped plate of single bending.
8. the base structure of diode illuminating device according to claim 1 is characterized in that, further is provided with one group of second material hole on this heat conduction body.
9. a manufacture method for diode light-emitting device is characterized in that, comprises the following steps:
Provide a heat conduction body, and this heat conduction body periphery is formed with at least one breach;
At least one lead frame is provided, is arranged in each this breach;
One first mould is provided, it is incorporated on this heat conduction body, and carry out super work of perfusion of a plastic insulation, and make those lead frames and this heat conduction body electrical isolation by one group of first material hole;
At least one diode chip for backlight unit is set in a chip base of this heat conduction body, again each this diode chip for backlight unit is electrically connected at those lead frames by couple of conductor;
Get photosphere with one, be covered on those diode chip for backlight unit of having finished those wire bond in this chip base;
One second mould is provided, and this second mould has the groove of a lens-type body;
Filling in order to a lens colloid of making these lens in the groove of this second mould;
Be connected with those leads between this lead frame and finish this and get this heat conduction body that photosphere covers finishing this diode chip for backlight unit, be incorporated on this second mould; And
After this lens colloid solidification, the mould that moves back that carries out second mould surpasses work.
10. manufacture method for diode light-emitting device according to claim 9 is characterized in that, this is organized first material hole and is arranged on this heat conduction body or this first mould.
11. manufacture method for diode light-emitting device according to claim 9, it is characterized in that, the method for placing of this diode chip for backlight unit utilizes high heat conducting base to combine with this diode chip for backlight unit earlier to be total to gold, soldering or some glue mode, and then is placed in this chip base.
12. manufacture method for diode light-emitting device according to claim 9 is characterized in that, this is got and further is coated with a light-wave conversion layer on the photosphere.
13. a manufacture method for diode light-emitting device is characterized in that, comprises the following steps:
Provide a heat conduction body with one group of second material hole, and this heat conduction body periphery is formed with at least one breach;
At least one lead frame is provided, is arranged in each this breach;
One first mould is provided, it is incorporated on this heat conduction body, and carry out super work of perfusion of a plastic insulation, and make those lead frames and this heat conduction body electrical isolation by one group of first material hole;
At least one diode chip for backlight unit is set in a chip base of this heat conduction body, with each this diode chip for backlight unit, all is electrically connected at those lead frames again by couple of conductor;
Get photosphere with one, be covered on this diode chip for backlight unit of having finished this wire bond in this chip base;
One second mould is provided, and this second mould has the groove of a lens-type body;
Be connected with those leads between this lead frame and finish this and get this heat conduction body that photosphere covers finishing this diode chip for backlight unit, be incorporated on this second mould;
To organize second material hole carries out these lens to this second mould super work of form by this in order to make a lens colloid of these lens; And
After this lens colloid solidification, move back the super work of mould.
14. manufacture method for diode light-emitting device according to claim 13 is characterized in that, this is organized first material hole and is arranged on this heat conduction body or this first mould.
15. manufacture method for diode light-emitting device according to claim 13, it is characterized in that, the method for placing of this diode chip for backlight unit utilizes high heat conducting base to combine with this diode chip for backlight unit earlier to be total to gold, soldering or some glue mode, and then is placed in this chip base.
16. manufacture method for diode light-emitting device according to claim 13 is characterized in that, this is got and further is coated with a light-wave conversion layer on the photosphere.
17. a manufacture method for diode light-emitting device is characterized in that, comprises the following steps:
Provide a heat conduction body with one group of second material hole, and this heat conduction body periphery is formed with at least one breach;
At least one lead frame is provided, is arranged in each this breach;
One first mould is provided, it is incorporated on this heat conduction body, and carry out super work of perfusion of a plastic insulation, and make those lead frames and this heat conduction body electrical isolation by one group of first material hole;
At least one diode chip for backlight unit is set in a chip base of this heat conduction body, again each this diode chip for backlight unit is electrically connected at those lead frames by couple of conductor;
Get photosphere with one, be covered on those diode chip for backlight unit of having finished those wire bond in this chip base;
One lens lid is provided, and this lens lid is a hollow housing;
Be connected with those leads between this lead frame and finish this and get this heat conduction body that photosphere covers finishing this diode chip for backlight unit, combine with this lens lid;
To organize second material hole carries out these lens to the hollow part of this lens lid super work of form by this in order to make a lens colloid of these lens; And
Make this lens colloid solidification that is poured in this lens lid.
18. manufacture method for diode light-emitting device according to claim 17 is characterized in that, this is organized first material hole and is arranged on this heat conduction body or this first mould.
19. manufacture method for diode light-emitting device according to claim 17, it is characterized in that, the method for placing of this diode chip for backlight unit utilizes high heat conducting base to combine with this diode chip for backlight unit earlier to be total to gold, soldering or some glue mode, and then is placed in this chip base.
20. manufacture method for diode light-emitting device according to claim 17 is characterized in that, this is got and further is coated with a light-wave conversion layer on the photosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100654788A CN100470861C (en) | 2006-03-22 | 2006-03-22 | Seat structure of diode illuminating device and method for manufacturing diode illuminating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100654788A CN100470861C (en) | 2006-03-22 | 2006-03-22 | Seat structure of diode illuminating device and method for manufacturing diode illuminating device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101043062A true CN101043062A (en) | 2007-09-26 |
| CN100470861C CN100470861C (en) | 2009-03-18 |
Family
ID=38808396
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100654788A Expired - Fee Related CN100470861C (en) | 2006-03-22 | 2006-03-22 | Seat structure of diode illuminating device and method for manufacturing diode illuminating device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100470861C (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102136470A (en) * | 2010-12-16 | 2011-07-27 | 河北立德电子有限公司 | Power type LED (light emitting diode) light source with low thermal resistance and high color rendering index |
| CN102280532A (en) * | 2010-12-08 | 2011-12-14 | 连得科技股份有限公司 | Manufacturing method of SMD double-color lead frame of light emitting diode |
| CN102290497A (en) * | 2010-10-13 | 2011-12-21 | 连得科技股份有限公司 | Production method for surface mounted device (SMD) lead frame of light-emitting diode |
| CN102339940A (en) * | 2010-07-27 | 2012-02-01 | 展晶科技(深圳)有限公司 | Encapsulation structure of light-emitting diode (LED) and manufacturing method thereof |
| CN102364686A (en) * | 2011-10-09 | 2012-02-29 | 常熟市广大电器有限公司 | High-power LED integrated packaging structure |
| CN103187506A (en) * | 2011-12-29 | 2013-07-03 | 展晶科技(深圳)有限公司 | Light-emitting diode device |
-
2006
- 2006-03-22 CN CNB2006100654788A patent/CN100470861C/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102339940A (en) * | 2010-07-27 | 2012-02-01 | 展晶科技(深圳)有限公司 | Encapsulation structure of light-emitting diode (LED) and manufacturing method thereof |
| CN102290497A (en) * | 2010-10-13 | 2011-12-21 | 连得科技股份有限公司 | Production method for surface mounted device (SMD) lead frame of light-emitting diode |
| CN102280532A (en) * | 2010-12-08 | 2011-12-14 | 连得科技股份有限公司 | Manufacturing method of SMD double-color lead frame of light emitting diode |
| CN102136470A (en) * | 2010-12-16 | 2011-07-27 | 河北立德电子有限公司 | Power type LED (light emitting diode) light source with low thermal resistance and high color rendering index |
| CN102364686A (en) * | 2011-10-09 | 2012-02-29 | 常熟市广大电器有限公司 | High-power LED integrated packaging structure |
| CN103187506A (en) * | 2011-12-29 | 2013-07-03 | 展晶科技(深圳)有限公司 | Light-emitting diode device |
| CN103187506B (en) * | 2011-12-29 | 2015-11-18 | 展晶科技(深圳)有限公司 | Light-emitting diode assembly |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100470861C (en) | 2009-03-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1310345C (en) | White-light luminous device | |
| CN1251001C (en) | Method for producing surface illuminating back light apparatus and surface illuminating back light apparatus | |
| CN101069292A (en) | Light emitting device package and mauufacture method of light emitting device package | |
| CN1734803A (en) | Semiconductor light-emitting device and method of manufacturing the same | |
| CN1266781C (en) | Method for manufacturing a light emitting device | |
| CN101051665A (en) | Light emitting diode package having anodized insulation layer and fabrication method therefor | |
| CN1905227A (en) | Light emitting diode package with diffuser and method of manufacturing the same | |
| US20100133561A1 (en) | Light emitting apparatus | |
| CN1898810A (en) | Package for light emitting device | |
| CN1806347A (en) | Led lamp | |
| CN1753200A (en) | Light emitting diode device | |
| CN1744335A (en) | Surface mount LED | |
| CN1822401A (en) | LED package frame and LED package having the same | |
| CN101060157A (en) | Light emitting diode package and fabrication method thereof | |
| CN1929159A (en) | Semiconductor illumination device | |
| CN101043062A (en) | Seat structure of diode illuminating device and method for manufacturing diode illuminating device | |
| CN1901190A (en) | Side view led with improved arrangement of protection device | |
| CN101060159A (en) | Light emitting diode package having multi-stepped reflecting surface structure and fabrication method thereof | |
| CN1825641A (en) | Semiconductor light emitting device and method of manufacture | |
| CN1841801A (en) | Semiconductor light emitting device and semiconductor light emitting unit | |
| CN1540773A (en) | Semiconductor light-emitting element with reflector having cooling function | |
| CN1315057A (en) | Light emitting diode | |
| CN101050846A (en) | Method for producing flexible light source and flexible base board and flexible solid state light source | |
| CN101075609A (en) | Structure and method for packing LED chip | |
| CN103187409A (en) | Light-emitting diode (LED) array packaging light source module based on lead frame |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090318 Termination date: 20120322 |