CN102339940A

CN102339940A - Encapsulation structure of light-emitting diode (LED) and manufacturing method thereof

Info

Publication number: CN102339940A
Application number: CN2010102381423A
Authority: CN
Inventors: 沈佳辉; 洪梓健; 曾坚信
Original assignee: Rongchuang Energy Technology Co ltd; Zhanjing Technology Shenzhen Co Ltd
Current assignee: Rongchuang Energy Technology Co ltd; Zhanjing Technology Shenzhen Co Ltd
Priority date: 2010-07-27
Filing date: 2010-07-27
Publication date: 2012-02-01

Abstract

The invention relates to an encapsulation structure of a light-emitting diode (LED). The encapsulation structure of the LED comprises a substrate, a light-emitting structure, encapsulation glue and a circuit structure, wherein the substrate comprises a first surface and a second surface opposite to the first surface; the light-emitting structure grows on the first surface; the encapsulation glue is formed on the first surface and covers the light-emitting structure; and the circuit structure is formed on the second surface of the substrate and is electrically connected with the light-emitting structure. The invention also relates to a manufacturing method for the encapsulation structure of the LED.

Description

Package structure for LED and manufacturing approach thereof

Technical field

The present invention relates to a kind of semiconductor package, relate in particular to a kind of package structure for LED and manufacturing approach thereof.

Background technology

Now, (Light Emitting Diode LED) has been widely applied to a lot of fields to light-emitting diode.Light-emitting diode generally can send the light of specific wavelength, for example visible light.In traditional package structure for LED manufacture process, at first need provide a wiring pedestal to be used to carry light-emitting diode chip for backlight unit, be sticked light-emitting diode chip for backlight unit on the wiring pedestal then and be electrically connected with the circuit of wiring on the pedestal.In this package structure for LED manufacture process, need gripping and location light-emitting diode chip for backlight unit, cause the whole manufacturing process time tediously long, and increased defective products because of step is various and chance occurs.

Summary of the invention

In view of this, be necessary to provide a kind of easily manufactured package structure for LED and manufacturing approach.

A kind of package structure for LED, it comprises substrate, ray structure, packaging plastic and circuit structure.Said substrate comprises a first surface and and said first surface opposing second surface.Said ray structure grows on the said first surface.Said packaging plastic is formed on the said first surface and covers said ray structure.Said circuit structure is formed on the second surface of said substrate, and is electrically connected with said ray structure.

A kind of manufacturing approach of package structure for LED may further comprise the steps: a substrate is provided, and this substrate comprises that a first surface reaches and said first surface opposing second surface; The ray structure of on said first surface, growing; On said second surface, form circuit structure, and this circuit structure is electrically connected with said ray structure; And formation one packaging plastic covers said ray structure on said first surface.

In the package structure for LED manufacturing approach that embodiment of the present invention provides; Directly utilize the wiring pedestal of the growth substrate of ray structure as package structure for LED; In the package structure for LED manufacture process; Saved gripping and location step such as light-emitting diode chip for backlight unit, made that the manufacture process of package structure for LED is simple more, save time, and can reduce defective products and chance occurs.

Description of drawings

Fig. 1 is a kind of package structure for LED cutaway view that embodiment of the present invention provides.

Fig. 2-the 6th, the manufacturing approach sketch map of the package structure for LED among Fig. 1.

The main element symbol description

Package structure for LED 100

Substrate 10

First surface 11

Second surface 12

Resilient coating 13

Insulating barrier 14

Reflector 15

Ray structure 20

Packaging plastic 30

Circuit structure 40

First electrode 41

Second electrode 42

First groove 111

The first holding part 111a

The second holding part 111b

Step surface 111c

Second groove 121

Through hole 122

Conductive pole 411

Lead 412

Embodiment

Below will combine accompanying drawing that the present invention is done further detailed description.

See also Fig. 1, a kind of package structure for LED 100 that embodiment of the present invention provides comprises substrate 10, ray structure 20, packaging plastic 30 and circuit structure 40.

Said substrate 10 has a first surface 11 and and said first surface 11 opposing second surface 12.In this execution mode, be formed with one first groove 111 on the said first surface 11, this first groove 111 is a step-like groove, and it comprises the first holding part 111a and the second holding part 111b.Be formed with a step surface 111c between the said first holding part 111a and the second holding part 111b, this step surface 111c is substantially parallel with said first surface 11.Preferably; The said first holding part 111a and the second holding part 111b all are the horn-like light reflection that is beneficial to; Promptly along on the direction near first surface 11; Diameter becomes greatly gradually, and preferably, the angle that the sidewall of the said first holding part 111a and the second holding part 111b forms is spent between 150 degree between 90.Be formed with one second groove 121 on the said second surface 12, this second groove 121 is extended to the diapire of first groove 111 by said second surface 12.Also be formed with on the said second surface 12 one run through said second surface 12 and step surface 111c through hole 122.

The material of said substrate 10 can be selected from silicon, carborundum, sapphire etc.For reducing cost and improving the heat dispersion of substrate 10, in this execution mode, the material of this substrate 10 is a silicon.For guaranteeing that the follow-up said circuit structure 40 that is formed on the substrate 10 can be to ray structure 20 stable power-supplyings; Phenomenon such as avoid being short-circuited; In this execution mode, on the second surface 12 of said substrate 10, the inwall of first groove 111, the inwall of second groove 121 and the inwall of through hole 122 all be formed with an insulating barrier 14.The optional autoxidation silicon of the material of this insulating barrier 14 (SiO ₂), silicon nitride (Si ₃N ₄) etc.On the insulating barrier 14 of the inwall of said first groove 111, also further be formed with a reflector 15.The material in this reflector 15 can be selected from metals such as aluminium, silver.For avoiding said reflector 15 to occur being electrically connected with ray structure 20, in this execution mode, said reflector 15 is provided with ray structure 20 at interval.

Said ray structure 20 is directly grown on the diapire of first groove 111 of said substrate 10.The quality of the ray structure 20 that grows for raising preferably, before growth ray structure 20, forms a resilient coating 13 earlier on the diapire of first groove 111, on resilient coating 13, form ray structure 20 then.In this execution mode, this resilient coating 13 is a silicon carbide layer, carries out carbonization through direct diapire to first groove 111 and forms.Said ray structure 20 generally comprises a n type semiconductor layer, a p type semiconductor layer and the luminescent layer between n type semiconductor layer and p type semiconductor layer.

Said circuit structure 40 comprises first electrode 41 and second electrode 42.Said first electrode 41 and second electrode 42 all are arranged on the second surface 12 of substrate 10, and respectively with ray structure 20 on two electrodes (figure do not show) be electrically connected.Said first electrode 41 is electrically connected with ray structure 20 through conductive pole 411 and the lead 412 that is positioned at through hole 122.Said second electrode 42 passes said second groove 121 and is electrically connected with ray structure 20.In this execution mode; Because step surface 111c is substantially parallel with said first surface 11, thereby makes things convenient for ray structure 20 to be connected with conductive pole 411 routings, in addition; Because step surface 111c is positioned at first groove 111, makes packaging plastic 30 can be good at coated wire 412.Said first electrode 41 and second electrode 42 adopt the heat-conductivity conducting material to process; Thereby with when ray structure 20 is electrically connected; Can also improve the radiating efficiency of ray structure 20, preferably, said first electrode 41 and second electrode 42 adopt metal or metal alloy to process.

Said packaging plastic 30 is filled in said first groove 111, is used to protect influences such as ray structure 20 dust, aqueous vapor.The mixing of one or more in the be selected from epoxy resin of said packaging plastic 30, the silicones etc.Preferably, can be doped with fluorescent material in the said packaging plastic 30, said fluorescent material can be selected from one or more the combination in yttrium-aluminium-garnet, terbium yttrium-aluminium-garnet, nitride, sulfide and the silicate.

Be appreciated that; Package structure for LED 100 in this execution mode is merely a kind of in the multiple preferred embodiments of the present invention, and the shape of first groove 111 on the said substrate 10, circuit structure 40 all are not limited to this execution mode with the connected mode of ray structure 20 and the formation position of insulating barrier 14 etc.In other embodiments, package structure for LED 100 also can not have above-mentioned first groove 111, but the ray structure 20 of directly on the first surface of substrate 10, growing.

See also Fig. 2-6, the manufacturing approach of said package structure for LED 100 may further comprise the steps:

Substrate 10 is provided, is formed with first groove 111 on the first surface 11 of this substrate 10.Said first groove 111 can be formed on the first surface 11 of substrate 10 through modes such as chemical etchings.The central authorities of the diapire of said first groove 111 can form a boss, and certainly, the diapire of said first groove 111 also can be a smooth bottom wall.

Growth ray structure 20 on the diapire of first groove 111 of said substrate 10.Said growth is meant the process that ray structure 20 is grown up from nucleus gradually.When the central authorities of said diapire were formed with boss, said ray structure 20 can be formed on this boss.Preferably, before growth ray structure 20, on the diapire of first groove 111, form resilient coating 13 earlier.In this execution mode, said substrate 10 is a silicon substrate, before growth ray structure 20, through at high temperature feeding propane and hydrogen the diapire carbonization of first groove 111 is formed carborundum as resilient coating 13, the ray structure 20 of then on carborundum, growing.Be appreciated that to improving the quality of the ray structure 20 of growing on the carborundum, also can on carborundum, further form other padded coamings.In addition; For fear of carrying out in the carbonisation at diapire to first groove 111; Other zones of the first surface 11 of substrate 10 and the inwall of first groove 111 like sidewall etc., also are carbonized; Can be before diapire carbonization to first groove 111, formation insulating barrier 14 on the inwall the zone of removing the need carbonization of the first surface 11 of substrate 10 and first groove 111 earlier.In this execution mode, adopt Metalorganic Chemical Vapor Deposition (MOCVD) ray structure 20 to be grown on the resilient coating 13 on the diapire of first groove 111 of said substrate 10.

On the second surface 12 of said substrate 10, form the through hole 122 and second groove 121.The said through hole 122 and second groove 121 can be formed on the second surface 12 of substrate 10 through modes such as chemical etchings.

On the second surface 12 of said substrate 10, form circuit structure 40, and it is electrically connected with ray structure 20.In this step; For guaranteeing that said circuit structure 40 can be to ray structure 20 stable power-supplyings; Phenomenon such as avoid being short-circuited, can be earlier on the second surface 12 of said substrate 10, all be formed with insulating barrier 14 on the inwall of the inwall of the inwall of first groove 111, second groove 121 and through hole 122.

Use packaging plastic 30 to cover said ray structure 20.In this execution mode, liquid packaging plastic 30 can be injected in first groove 111, then solidifies with protection ray structure 20.

Before using packaging plastic 30 to cover said ray structure 20, can form reflector 15 at first groove, 111 inwalls earlier.

It is understandable that, for the person of ordinary skill of the art, can make change and the distortion that other various pictures are answered by technical conceive according to the present invention, and all these change the protection range that all should belong to claim of the present invention with distortion.

Claims

1. package structure for LED; It comprises substrate, ray structure, packaging plastic and circuit structure, and said substrate comprises that a first surface reaches and said first surface opposing second surface, is characterized in that; Said ray structure grows on the said first surface; Said packaging plastic is formed on the said first surface and covers said ray structure, and said circuit structure is formed on the second surface of said substrate, and is electrically connected with said ray structure.

2. package structure for LED as claimed in claim 1 is characterized in that: be formed with one first groove on the said first surface, said ray structure grows on the diapire of this first groove, and said packaging plastic is filled in first groove.

3. package structure for LED as claimed in claim 2; It is characterized in that: said first groove is a step-like groove; It comprises first holding part and second holding part; Be formed with a step surface between said first holding part and second holding part, this step surface is substantially parallel with said first surface.

4. package structure for LED as claimed in claim 3 is characterized in that: said circuit structure comprises one first electrode and one second electrode; Be formed with one on the second surface of said substrate and extend to second groove of the diapire of first groove from said second surface, and one run through said second surface and said step surface through hole; Said first electrode is connected with the ray structure routing through a conductive pole that is positioned at said through hole, and said second electrode passes said second groove and is electrically connected with ray structure.

5. package structure for LED as claimed in claim 4 is characterized in that: said first electrode and the second electrodes use heat-conductivity conducting material are processed.

6. the manufacturing approach of a package structure for LED may further comprise the steps:

One substrate is provided, and this substrate comprises that a first surface reaches and said first surface opposing second surface;

The ray structure of on said first surface, growing;

On said second surface, form circuit structure, and this circuit structure is electrically connected with said ray structure; And

On said first surface, form a packaging plastic and cover said ray structure.

7. the manufacturing approach of package structure for LED as claimed in claim 6, it is characterized in that: be formed with one first groove on the said first surface, said ray structure grows on the diapire of this first groove, and said packaging plastic is filled in first groove.

8. the manufacturing approach of package structure for LED as claimed in claim 7; It is characterized in that: said first groove is a step-like groove; It comprises first holding part and second holding part; Be formed with a step surface between said first holding part and second holding part, this step surface is substantially parallel with said first surface; Said circuit structure comprises one first electrode and one second electrode; Be formed with one on the second surface of said substrate and extend to second groove of the diapire of first groove from said second surface, and one run through said second surface and said step surface through hole; Said first electrode is connected with the ray structure routing through a conductive pole that is positioned at said through hole, and said second electrode passes said second groove and is electrically connected with ray structure.

9. the manufacturing approach of package structure for LED as claimed in claim 8, it is characterized in that: said first electrode and the second electrodes use heat-conductivity conducting material are processed.

10. the manufacturing approach of package structure for LED as claimed in claim 7, it is characterized in that: said substrate is a silicon substrate, before the growth ray structure, earlier the diapire of first groove is carried out carbonization and forms a silicon carbide layer.