CN101032029A - Semiconductor assembly comprising a tunnel contact and method for producing said assembly - Google Patents
Semiconductor assembly comprising a tunnel contact and method for producing said assembly Download PDFInfo
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- CN101032029A CN101032029A CNA2005800329766A CN200580032976A CN101032029A CN 101032029 A CN101032029 A CN 101032029A CN A2005800329766 A CNA2005800329766 A CN A2005800329766A CN 200580032976 A CN200580032976 A CN 200580032976A CN 101032029 A CN101032029 A CN 101032029A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims abstract description 6
- 239000011248 coating agent Substances 0.000 claims abstract description 4
- 238000000576 coating method Methods 0.000 claims abstract description 4
- 238000000407 epitaxy Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 22
- 238000010276 construction Methods 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 claims 12
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 3
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical compound [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- -1 aluminum ions Chemical class 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000014509 gene expression Effects 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 3
- 238000012827 research and development Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 244000287680 Garcinia dulcis Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000013213 extrapolation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention relates to a Semiconductor structure composed from silicon carbide or kinsmanship material, which is provided with a wafer used as substrate and contact of an highness guide tunnel ahead. So use an N-type wafer, when epitaxial grow it will be adulterate reverse turn. When use a P-type doped semi-conducting material (32) to coating (P-type denotation ) a N-type adulterate wafer which used as substrate (30) for use to produce the semiconductor structure, before the P -type epitaxy immit N-type to the wafer so as to constitute the tunnel ahead contacts. Therefore, the IGBT-type component can be produced.
Description
Technical field
The present invention relates to the semiconductor structure of a kind of claim 1 wide band gap as described in the preamble, that constitute by carborundum or similar material.In addition, the invention still further relates to a kind of this correlation method that is particularly useful as the semiconductor structure of special switch element of making.
Background technology
Semiconductor structure is made of wafer (wafer) and a plurality of this semi-conductive layer above the wafer, that have the regulation doping that is arranged in as substrate usually.By relative configurations and be equipped with electrode, can be on the basis of this semiconductor structure construction semiconductor switch element.
Concerning a series of double-pole switches of making based on this semi-conducting material of carborundum (SiC), need the back side of the P-type conduction of a SiC material.Because P-type conduction substrate (wafer) is subjected to the crystal bring-up technology limitation, only have the bad conductivity of several Ω cm, therefore, this P type wafer can not be used for the construction switch element.
As everyone knows, though can reduce the actual resistance of substrate with described thickness pro rata by the thickness that reduces P type wafer, because the defect concentration of P type wafer is far above the substrate of present operational N type, this substrate can't be applied in the power electronic technology.From technology and economic two aspects, its main cause is respectively, the static loss that is caused by the present defect concentration that has of P type wafer and the poor efficiency of P type wafer.
The problem in back can only just can be resolved by the quality leap occurs in following P type substrate research and development.But the research and development problem still is that quick progress on this research and development basis is not supported in the assessment of the relevant market demand.Usually also need heavy current and corresponding big chip area when in addition, using this substrate.
Announced semiconductor structure among WO 2004/075253 A2, EP 0 864 180 B1 and US 2003/0151042 A1 with tunnel contact.But these semiconductor structures relate to is semiconductor structure based on the material that is different from carborundum.Open source literature " Applied Physics Letters " (ISSN 0003 to 6951 (1993), rolls up 2510 to 2512 pages 62, the No. 20) is specially to being that the semiconductor structure of semi-conducting material is illustrated with GaAs and/or InGaAsP.
US 5 338 944 A then provide the correlation technique of based on silicon carbide realization tunnel contact, can realize (degenerated) semiconductor junction of so-called degeneration by described method.
In addition, among DE 199 54 343 A to a kind of have adopt the semiconductor structure of the tunnel contact that double epi process makes to be illustrated.US 3 254 278 A have proposed identical therewith in essence solution.At last, open source literature " IEEE Transactions on Electron Devices " (ISSN0018/9383 (1999) rolls up 542 to 545 pages 46, the No. 3) provides a kind of silicon carbide MOSFET.
Summary of the invention
Prior art is from above set out, and the purpose of this invention is to provide a kind of replacement scheme that is used for the semiconductor structure of such use.
According to the present invention, this purpose is reached by the feature according to claim 1.The theme of claim 9 is a kind of methods of making this semiconductor structure.What dependent claims illustrated is that described semiconductor structure and manufacture method thereof are the improvement project of purpose especially with the construction switch element.
Can provide a kind of replacement scheme of semiconductor structure by the present invention, N type wafer as base substrate, is particularly useful as the double-pole switch purpose.Wherein, can on the SiC semi-conducting material, realize tunnel contact.Can not occur the counter-rotating of mixing when being applied in tunnel contact of the present invention on the components and parts, thereby can not cause the counter-rotating of conventional voltage yet.
Description of drawings
Below by embodiment shown in the drawings and get in touch claim other details and advantage of the present invention described, wherein:
Fig. 1 a and 1b inject aluminium ion or nitrogen/aluminum ions two kinds of possibilities in a substrate;
Fig. 2 is the chart of the relation between an expression doping content and the thickness;
Fig. 3 is the cell design (celldesign) of an IGBT (igbt) N-type semiconductor N device; And
Fig. 4 is the cell design with a P emitter shown in Figure 3.
Embodiment
One semiconductor structure based on carborundum (SiC) need be equipped with at least one tunnel contact.Following elder generation describes wherein used ion implantation technique by Fig. 1 a, 1b and Fig. 2.Relend subsequently and help Fig. 3 and Fig. 4 that described semiconductor structure is described in an application of being furnished with in the SiC layer structure of respective electrode, can realize IGBT type components and parts by this application.
Fig. 1 shows is one to have the N type substrate 1 of coating 2.As shown in Figure 1a, adopt energy 25kV and very high dosage (＞10
13/ cm
2) shallow injection aluminium ion 3.Except that aluminium ion, also can consider to inject boron (B) ion in case of necessity.
In the replacement scheme shown in Fig. 1 b, in substrate 1, use the shallow implantation dosage of 25kV very high (＞10 earlier
13/ cm
2) nitrogen ion 4, thereby form a coating 2 '.Subsequently as shown in Figure 1a, implantation dosage very high (＞10
13/ cm
2) 25kV aluminium ion 3.
Also can consider to inject phosphorus (P) ion first in case of necessity in step by step and replace the nitrogen ion, and second still carries out step by step as stated above.Can realize on N type wafer all under two kinds of situations that one has the SiC tunnel contact of the pn knot sudden change of being almost, symmetry, the characteristic of described pn knot will obtain explanation by Fig. 2.
In chart shown in Figure 2, curve 21 represents that on the abscissa of coordinate system with μ m or nm be the thickness of unit, and expression is with cm on ordinate
-3Doping content for unit.Thickness in N type substrate 1 is to inject aluminium ion in the epitaxially grown layer 2 of 50nm:
In the example that provides, the doping content of N type substrate is about 5e
18Cm
-3, the doping content of p-Epi-50nm layer is about 3e
16Cm
-3, the dosage that the 25kV aluminium ion injects is 5e
14Cm
-2
In Fig. 2, curve 21 shows that earlier doping content is at＜0.05 μ m, promptly less than the rising in the 50nm scope.At first, the density of states raises.One maximum 3e roughly appears at the 25nm place
19Cm
-3, begin again subsequently to descend.About the 50nm place, curve 21 sharply descends on the surface of epitaxial growth substrate greatly, rises to the equilibrium concentration of aluminium subsequently again in the scope of one＜10nm width again.Wherein, the process that the extrapolation line 22 expression 25kV aluminium ions that dot inject.
By the density of states this transition rapidly as shown in Figure 2, realized a kind of tunnel contact that can pass in quantum-mechanical mode by electric charge carrier.This function is at carborundum (SiC)-N
+Construction one bipolar switch element is extremely important on the substrate basis, forms a back side P in the substrate
+Emitter.
Fig. 3 has shown an IGBT as thyristor, and it is made of a wafer and a plurality of semi-conductive layer that is arranged on the described wafer: particularly, and 30 expressions, one n
+Substrate has an ohmic contact 31 that can realize " drain contact " in IGBT on its bottom side.n
+Going up on the one hand of substrate 30 is furnished with a tunnel contact 50 and is furnished with a plurality of semi-conductive layers 32 to 40 again, hereinafter will be explained.
Layer 32 is a p who makes as stated above
+Emitter.p
+The N type conductive layer 33 that has a usefulness epitaxy technology to make on the layer 32.Can realize a back side p emitter whereby, it is as a bipolar electronic devices and components basis.
Center at the active area of described IGBT has a p
+ Contact layer 34, its both sides are isolated by a p district 35 (" well " in so-called " p trap " or the English) respectively.Above the district 35 n is arranged
+The one p passage 37 on source 36 and next door thereof.Be furnished with one " grid-oxide " layer 38 on this, it is covered by one polysilicon-grid layer 39 again.
Be furnished with an insulating barrier 40 and a stepped contact layer 41 that leads to " source contact " described center, formation IGBT above this ladder-type structure.
Importantly, can on wafer, form one by this special manufacture method and be positioned at n
+Substrate 30 and p
+ Close Tunnel 50 between the emitter 32.On semi-conducting material carborundum, can realize the function at the P-type conduction back side whereby.
What Fig. 4 showed is an IGBT type components and parts structure similar to Fig. 3.Wherein, p
+The structure of emitter 32 is different from shown in Figure 3, thus occurred a plurality of single districts 42,42 ' ....Can realize so-called " anode in short circuit " whereby, consequently form short circuit, described short circuit limits certain strength by above-mentioned spatial distribution.
By the extension of epitaxial loayer (Epi layer) 32 and 33 and by before the epitaxial growth of N type, carrying out etching, can produce one have the district 42 ', 42 " p
+Emitter, thus distributed short circuit appears.This short circuit (" anode in short circuit ") is for example made by the extension wafer layer is carried out etching.
In Fig. 3 and embodiment shown in Figure 4, it is favourable using the N type wafer of facile high-quality.This is because consider following reality, that is, needed originally to use P type wafer, but do not have the enough good P type wafer of quality for use in the practice.
In the above-described embodiments, a back problem can be passed through at n
++Set up an ohmic contact 31 on the bottom side of substrate 30 and by setting up thickness at the upside of substrate for example for the p-epi layer 32 of 50nm is resolved, described p-epi layer before epitaxial growth this layer facing to the interface of N type wafer by the shallow injection of aluminium ion and by highly doped.Form two side-prominent highly doped pn knots thus, its characteristic is as follows: particularly big band gap makes electric charge carrier carry out so-called " band-band tunnelling " and/or " trap is assisted tunnelling " in carborundum (SiC), and described electric charge carrier has negligible disintegration voltage.
Before P type extension, with maximum dose N type wafer 30 is also carried out shallow N type and inject, can considerably further increase band curvature with doping gradient thus.The high defect concentration that forms during injection can be improved by so-called " trap is assisted tunnelling " and by the recombination velocity in remarkable quickening electronics and hole and contacts conductivity.Wherein, can advantageously utilize following situation, that is, in carborundum (SiC), might have sudden change pn knot in 5 to 20nm the scope, because diffusion in fact in treatment step subsequently, can not occur.Can activate intracell injection alloy by electricity by a common annealing steps, and very likely defect level be had Different Effects.
Therefore, can be by described method at a n
++Construction one p emitter on the substrate.Whereby can be for example by known processing method, particularly by using the very high thick n-Epi layer of carrier lifetime to come the bipolar high blocking swtich that construction is improved, have conventional polarity.Thereby avoid existing on the operation technique SiC P type substrate of defective.
In addition, as shown in Figure 4, can correspondingly come the construction emitter, thereby make it have the emitter characteristic of expectation with for example " anode in short circuit ".Can eliminate some shortcomings whereby: in the extension components and parts, constitute by wafer when emitter and during the complete surperficial homogeneous in the back side, these shortcomings are former to be unavoidable.
Claims (18)
1. the semiconductor structure of a wide band gap that is made of carborundum or similar material comprises: a N type wafer (30) as substrate; A plurality of be arranged in above the described wafer, have a semiconductor layer (31 to 40) that regulation is mixed; Be arranged in negative electrode and anode and at least one tunnel contact (50) in the described substrate (30) as first and second electrodes,
It is characterized in that,
Have epitaxial growth p layer (32,42) on the described N type wafer (30), it constitutes a tunnel contact (50) with described N type wafer (30).
2. according to the described semiconductor structure of claim l, it is characterized in that,
Form a back side p emitter (32).
3. semiconductor structure according to claim 1 and 2 is characterized in that,
Described substrate is a N type wafer (30), wherein, compares with normal structure, and the counter-rotating of mixing takes place in the described semiconductor layer (32 to 40).
4. semiconductor structure according to claim 3 is characterized in that,
Negative electrode as first electrode on the described N type wafer (30) is an ohmic contact (31).
5. arbitrary described semiconductor structure in requiring according to aforesaid right is characterized in that,
Form the highly doped pn knot (30,32,33) of both sides, described pn knot forms described tunnel contact (50).
6. arbitrary described semiconductor structure in requiring according to aforesaid right is characterized in that,
Exist other to be used to constitute the epitaxial growth p layer of a switch element.
7. semiconductor structure according to claim 6 is characterized in that,
Described switch element is an IGBT.
8. semiconductor structure according to claim 7 is characterized in that,
Described IGBT has one " source electrode " contact (41) and one " drain electrode " contact (31).
9. make the method for wide band gap semiconductor structure with carborundum or similar material for one kind, described semiconductor structure comprises: a N type wafer (30) as substrate; A plurality of be arranged in above the described wafer, have a semiconductor layer (31 to 40) that regulation is mixed; Be arranged in negative electrode and anode and at least one tunnel contact (50) in the described substrate (30) as first and second electrodes,
It is characterized in that,
The semi-conducting material that mixes with a P type carries out extension coating (P type extension) to one as the N type wafers doped of substrate, and
Before described P type extension, described wafer is carried out the N type inject and set up described tunnel contact.
10. manufacture method according to claim 9 is characterized in that,
Use a height to lead the substrate of N type, apply the thin epitaxy layer that a P type mixes in described substrate, carry out the P type subsequently and inject, described injection meeting forms the P type on the interface between described substrate and the P type epitaxial loayer highly doped.
11. manufacture method according to claim 10 is characterized in that,
Realize that by injecting aluminium (Al) ion described P type injects.
12. manufacture method according to claim 9 is characterized in that,
Before the thin epitaxy layer that applies described P type doping, the N type that carries out nearly surface mixes and injects, to increase the N type doping content at described substrate surface place.
13. manufacture method according to claim 12 is characterized in that,
Realize that by injecting nitrogen (N) ion described N type injects.
14. according to each described manufacture method in the claim 9 to 13, it is characterized in that,
Set up described back side P type doped region, form the anode in short circuit structure.
15. according to each described manufacture method in the claim 9 to 14, it is characterized in that,
The semiconductor device of making is an igbt.
16. manufacture method according to claim 15 is characterized in that,
Before P type extension, with maximum dose described wafer being carried out with the band curvature is the N type injection of purpose, thus, considerably increases band curvature with doping gradient.
17. according to each described manufacture method in the claim 9 to 16, it is characterized in that,
Inject by on described wafer, carrying out described N type, form the highly doped pn knot of both sides.
18. according to each described manufacture method in the claim 9 to 17, it is characterized in that,
With the described p of anode in short circuit construction
+Emitter.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102004047313.7 | 2004-09-29 | ||
| DE200410047313 DE102004047313B3 (en) | 2004-09-29 | 2004-09-29 | Semiconductor arrangement with a tunnel contact and method for its production |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101032029A true CN101032029A (en) | 2007-09-05 |
Family
ID=35406197
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2005800329766A Pending CN101032029A (en) | 2004-09-29 | 2005-09-19 | Semiconductor assembly comprising a tunnel contact and method for producing said assembly |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN101032029A (en) |
| DE (1) | DE102004047313B3 (en) |
| WO (1) | WO2006034970A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101393934B (en) * | 2007-09-20 | 2010-10-27 | 株式会社东芝 | Semiconductor device and method of manufacturing the same |
| CN103151262A (en) * | 2011-12-07 | 2013-06-12 | 无锡华润华晶微电子有限公司 | Planar insulated gate bipolar transistor and preparation method thereof |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3254278A (en) * | 1960-11-14 | 1966-05-31 | Hoffman Electronics Corp | Tunnel diode device |
| US5087576A (en) * | 1987-10-26 | 1992-02-11 | North Carolina State University | Implantation and electrical activation of dopants into monocrystalline silicon carbide |
| US5338944A (en) * | 1993-09-22 | 1994-08-16 | Cree Research, Inc. | Blue light-emitting diode with degenerate junction structure |
| GB9524414D0 (en) * | 1995-11-29 | 1996-01-31 | Secr Defence | Low resistance contact semiconductor device |
| US6011279A (en) * | 1997-04-30 | 2000-01-04 | Cree Research, Inc. | Silicon carbide field controlled bipolar switch |
| DE19954343A1 (en) * | 1999-11-11 | 2001-05-23 | Infineon Technologies Ag | Surface emitting laser diode enables higher light yield to be achieved with less heating |
| DE10134672C1 (en) * | 2001-07-20 | 2003-01-09 | Krohne Messtechnik Kg | Magnetic-inductive volumetric flow measuring device, uses supply lines for sensor device field coils for supplying stored characteristics for sensor device to evaluation and supply unit |
| SE525574C2 (en) * | 2002-08-30 | 2005-03-15 | Okmetic Oyj | Low-doped silicon carbide substrate and its use in high-voltage components |
| US7170097B2 (en) * | 2003-02-14 | 2007-01-30 | Cree, Inc. | Inverted light emitting diode on conductive substrate |
-
2004
- 2004-09-29 DE DE200410047313 patent/DE102004047313B3/en not_active Expired - Fee Related
-
2005
- 2005-09-19 CN CNA2005800329766A patent/CN101032029A/en active Pending
- 2005-09-19 WO PCT/EP2005/054655 patent/WO2006034970A1/en active Application Filing
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101393934B (en) * | 2007-09-20 | 2010-10-27 | 株式会社东芝 | Semiconductor device and method of manufacturing the same |
| CN103151262A (en) * | 2011-12-07 | 2013-06-12 | 无锡华润华晶微电子有限公司 | Planar insulated gate bipolar transistor and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102004047313B3 (en) | 2006-03-30 |
| WO2006034970A1 (en) | 2006-04-06 |
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