CN101017145A - Photoelectron characteristic detecting method for thin-layer microcrystal medium material and device thereof - Google Patents

Photoelectron characteristic detecting method for thin-layer microcrystal medium material and device thereof Download PDF

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CN101017145A
CN101017145A CNA2007100615608A CN200710061560A CN101017145A CN 101017145 A CN101017145 A CN 101017145A CN A2007100615608 A CNA2007100615608 A CN A2007100615608A CN 200710061560 A CN200710061560 A CN 200710061560A CN 101017145 A CN101017145 A CN 101017145A
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李晓苇
赖伟东
杨少鹏
张连水
傅广生
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Hebei University
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Hebei University
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Abstract

This invention relates to one film transistor medium material photo electron property test method and device, which comprises the following scheme: micro source giving out two paths of micro wave with one for reference signal and other for detection signals into microwave vibration chamber; using laser to light microwave resonance chamber dielectric materials; reflecting detection signals from the chamber into two balance frequency mixture devices; the device makes use of the mixture of the signals by use of phase sensitive technique to isolate micro wave absorptive signals and diffusion signals converted into voltage change; outputting voltage change into computer to get freedom and beam signal range attuning curve.

Description

A kind of photoelectron characteristic detecting method of thin-layer microcrystal medium material and device
Technical field
The present invention relates to a kind of detection method of dielectric material and realize the device of this method, belong to field of measuring technique.
Background technology
Usually the crystallite in using in interested light-sensitive silver halide layer material and zinc sulphide, the zinc oxide luminescent medium layer material all has semiconductor structure, crystal valence band photoelectron transits to conduction band and does nearly free movement after being subjected to optical excitation, in the process of motion or with the trap on material crystals surface, combine the record of realizing optical information, perhaps discharge the energy storage energy level of certain energy relaxation in the crystal forbidden band, the form by optical radiation is returned valence band behind the certain interval of time then, realizes afterglow.The characteristics of motion of photo-generated carrier is the principal element of decision sensitization and luminous mechanism; Material sensitization and luminous efficient can reflect in the photo-generated carrier life-span changes.By measurement to the charge carrier decay life-span in the material, just can obtain the influence that the different constituents with material of different condition (as temperature, concentration, pressure, time) (as the variety classes and the content of impurity) form the sensitization latent image and the afterglow process produces, so mechanism and the practical application effect of studying the thin-layered medium material by the transient performance of studying photo-generated carrier have crucial meaning.If any a kind of method that can detect the photo-generated carrier attenuation characteristic in real time, then the process modification of thin-layered medium material and raising are just evidence-based; Be applied in the manufacture of materials flow process, just can by real-time monitoring quality of materials in time, rapid adjustment technology, thereby save plenty of time and manpower and materials.
The carrier lifetime method is broadly divided into contact measurement and non-cpntact measurement two classes in the existing measurement material.The characteristics of contact method are the turn on process that charge carrier participates in circuit, change the charge carrier information that obtains by the bulk parameter of measuring turning circuit.Have than typical method at present: (1) Haynes-Shockley method and Morton-Haynes method: these two kinds of methods contact with the sample crystal as electrode by probe, when in the sample during the excessive charge carrier of instantaneous generation, by detecting the information that electric current obtains carrier lifetime, be better simply measurement means.(2) photoconduction-photoelectromagnetic mensuration: this method is to ask carrier lifetime by uniting of photoconductive effect and photo electromagnetic effect, utilize a large amount of excess carriers of pulsed light moment generation, ask carrier lifetime by the variation of measuring media conductivity of material and the charging short-circuit current (the measured electric current of sample crystal external short circuit during illumination) of photo electromagnetic effect generation.This method is suitable for measuring the single carrier life-span.(3) photo-conductivity decay method: this method is to add bias voltage at the sample two ends, changes the photoconductive information that obtains by the electric current in the measuring samples, and its temporal resolution can reach 10 -7Second.Contact measurement must be on testing sample connection electrode, constitute closed circuit, the electrical quantities in the metering circuit obtains the information of carrier lifetime.This method need bigger crystal so that be connected with electrode, and the photoelectron behavior of crystallite has very big difference in the layer material of bigger crystal and practical application when being used to measure; Crystallite is distributed in the medium thin layer discretely when practical application, though all produce photoelectron in each crystal grain, it is independently each other, is insulating property (properties) on the whole, can't form loop current.Therefore, the photoelectronic property of the sensitization of contact measuring method measurement dispersed system and luminous thin-layered medium material is to be difficult to realize.
Another kind method---the noncontact method is based on Theory of Electromagnetic Field, and the ultimate principle of its beasurement base all is a resonant absorption effects.Electromagnetic field is by being absorbed with free carrier resonance, and this absorption causes the variation of electromagnetic field character (amplitude and phase place), obtains the behavioural information of charge carrier in the medium by the variation of measurement field.Characteristics be charge carrier directly with the electric field interaction, do not participate in the circuit turn-on process, the parameter by electromagnetic field changes the charge carrier information that obtains.Main path has: (1) measures reflection wave: when medium is subjected to external disturbance, the microwave field that is radiated on the medium will be affected, and just can obtain the internal information of medium by the variable power of accepting the microwave reflection field.Such as: utilize Δ p=A Δ σ, the variation of Δ p microwave reflection power, Δ σ is the increase of conductivity, can obtain medium conductivity.(2) measure transmitted wave; (3) microwave cavity parameter measurement.This method is that sample is put into microwave cavity, and the influence of sample charge carrier has changed the resonant condition in chamber, obtains the information of sample by the variation of chamber parameter.The noncontact method can be used to measure the photo-generated carrier transient performance of dispersed system thin-layered medium material, but no matter present existing technology is from measuring sensitivity, still from the temporal resolution aspect, can't satisfy the requirement of research sensitization and the behavior of luminescent material charge carrier, can't catch photo-generated carrier and change the time signal of (ns magnitude) fast, especially can not distinguish different photo-generated carriers---the photoelectronic behavior of free and shallow constraint is very important and detect two kinds of charge carrier behaviors for situation and the effect thereof of understanding different electron traps in the crystal.And what reported at present both at home and abroad is that the starting point of its design of instrument of principle is not the context of detection that is applied in light-sensitive silver halide thin layer micro crystal material and luminous thin-layer microcrystal medium material photo-generated carrier such as zinc sulphide, zinc paste dynamic behavior with the noncontact method.
Summary of the invention
Technical matters to be solved by this invention is at the deficiencies in the prior art, development provide have higher sensitivity and resolution, utilize microwave on thin-layer sample contact-free detection and distinguish the behavior of different charge carriers by phase sensitive system, obtain a kind of device that detects thin-layer microcrystal medium material photoelectronic property method and realize this method of charge carrier decay behavior accurately and life parameter.
The technical scheme that solves the problems of the technologies described above is:
A kind of photoelectron characteristic detecting method of thin-layer microcrystal medium material, it is by the microwave reflection ripple of thin-layer microcrystal medium material under the detection laser irradiation, utilize phase sensitive system to obtain that reflection wave that the material photo-generated carrier causes absorbs and the variation of dispersion signal, promptly corresponding free photoelectron and the photoelectronic attenuation process of constraint, by the photoelectron life-span that die-away curve calculates the thin-layer microcrystal medium material of surveying, its special feature is to adopt following steps to carry out:
A. the thin-layer microcrystal medium material sample is placed in the microwave cavity by light well;
B. the microwave that sends of microwave source is divided into two-way through isolator and by power divider, wherein conduct is imported two balanced mixers with reference to the signal constant amplitude behind one tunnel process phase shifter, another road through attenuator and circulator, enters microwave cavity as detectable signal;
C. utilize the thin-layer microcrystal medium material in the fast pulse laser radiation microwave cavity;
D. the reflection wave of the detection microwave in the microwave cavity is a detectable signal, through circulator and power divider, imports two balanced mixers after it is exported from microwave cavity;
E. two balanced mixers with reference signal and detectable signal mixing after, utilize the phase sensitivity technology to isolate microwave absorbing signal and dispersion signal, the variation of absorption signal and dispersion signal power is converted into the variation of output voltage;
F. output voltage is changed through noting output voltage by digital oscilloscope after the preposition amplification system, be input to then in the computing machine, obtain amplitude fading curve free and the constraint photoelectron signal.
The photoelectron characteristic detecting method of above-mentioned thin-layer microcrystal medium material, the reference signal of described two balanced mixers have 90 ° of phasic differences, and the detectable signal that is input to two balanced mixers is the constant amplitude in-phase signal.
The photoelectron characteristic detecting method of above-mentioned thin-layer microcrystal medium material, the free photoelectronic decay of the variation respective material of described absorption signal, the photoelectronic decay of the corresponding constraint of the variation of dispersion signal.
The photoelectron characteristic detecting method of above-mentioned thin-layer microcrystal medium material, the frequency of described microwave source are (Q-band) 35.4GHz, adopt the TE103 mode of oscillation, laser pulse width 35ps.
A kind of device of realizing above-mentioned thin-layer microcrystal medium material photoelectron characteristic detecting method, it partly is made up of laser radiation part, microwave phase-sensitive detection part, data acquisition process;
The laser radiation part is made up of laser instrument and microwave cavity, and the laser beam of laser instrument output enters microwave cavity by the light well of microwave cavity, and microwave cavity partly is connected with the microwave phase-sensitive detection;
Microwave phase-sensitive detection part is by the microwave output circuit, mixting circuit, the detectable signal circuit is formed, the microwave output circuit is by microwave source, isolator, power divider connects successively, mixting circuit is made up of two parallel frequency mixer, they comprise isolator respectively, frequency mixer and isolator, frequency mixer, phase shifter, the detectable signal circuit is by attenuator, circulator, power divider connects to form successively, the power divider of microwave output circuit respectively with the isolator of mixting circuit, the attenuator of detectable signal circuit is connected, the other end of mixting circuit is connected with the power divider of detectable signal circuit, the circulator of detectable signal circuit is connected with microwave cavity, is connected with phase shifter between the isolator of the power divider of microwave output circuit and mixting circuit;
The data acquisition process part is made up of prime amplifier, oscillograph, the output signal end of the frequency mixer of the input termination microwave phase-sensitive detection part of prime amplifier, the output termination oscillograph of prime amplifier.
A kind of device of realizing above-mentioned thin-layer microcrystal medium material photoelectron characteristic detecting method, its microwave cavity adopts the combination of electric dipole and magnetic dipole, light well is opened the sidewall in microwave cavity, microwave cavity adopts TE103 mode of oscillation microwave cavity, long L=13.416 millimeter, wide w=15.000 millimeter, high h=3.556 millimeter, microwave resonance inner cavity surface coating silver.
The photoelectron characteristic detecting method of this thin-layer microcrystal medium material and device, based on the microwave absorbing principle, change influence by detecting behind the pulsed laser irradiation layer material dielectric function in the microwave cavity to the microwave state, and utilize the phase-sensitive detection technology of feeble signal that absorption signal and dispersion signal in the microwave reflection ripple are extracted respectively and separate from ground unrest, obtain the different photo-generated carriers of thin-layer microcrystal medium material---free photoelectron and constraint Photoelectron Decay Characteristic, calculate the photoelectron life-span by the photoelectron die-away curve, thereby realized that the real non-destructive of different photo-generated carriers is measured in the thin-layer microcrystal medium material.
Description of drawings
Fig. 1 is the schematic flow sheet of detection method of the present invention
Fig. 2 is the structural representation of the microwave cavity of pick-up unit of the present invention
Mark is as follows among the figure: laser radiation part 1, microwave phase-sensitive detection part 2, data acquisition process part 3, laser instrument 4, microwave cavity 5, microwave source 6, isolator 7, power divider 8, isolator 9, frequency mixer 10, isolator 11, phase shifter 12, frequency mixer 13, attenuator 14, circulator 15, power divider 16, matched load 17, phase shifter 18, prime amplifier 19, oscillograph 20, thin-layer sample 21, laser beam 22, incident microwave 23, microwave reflection 24, light well 25, the long L of resonator cavity, the wide w of resonator cavity, the high h of resonator cavity
Embodiment
Crystallite medium layer material photoelectron characteristic detecting method of the present invention comprises that ultra-short pulse laser illuminated portion 1, microwave phase sensitivity examine then part 2 and data acquisition process part 3.Laser radiation part 1 produces the laser 22 of ultrashort pulse (35ps), be radiated at by on the light well 25 edge-on samples 21 in microwave cavity 5, cause the layer material dielectric function (ε=ε '+variation of i ε "), the real part ε ' of dielectric material function and imaginary part ε " variation make that the character of microwave changes in the microwave cavity.The variation of dielectric function imaginary part causes the absorption of thin-layered medium material to the aerial microwave field of microwave resonance, and absorbed microwave power is:
Δ P=Δ VE 2σ=Δ Ve μ E 2n Free
E is a microwave field density in the formula, and Δ V is a sample volume, and σ is a photoconductivity, and μ is a mobility, and e is the electric charge of electronics, n FreeBe free photoelectronic concentration.The variation of dielectric function real part is offset the resonance frequency omega of microwave cavity.Because the quality factor of microwave cavity are expressed formula:
Q = υ B c = ω 2 π B c (B in the formula cBe bandwidth)
As can be known, the skew of resonance frequency causes the quality factor q of microwave cavity to change.
The real part of thin-layer microcrystal medium material dielectric function and the variation of imaginary part make that variation has taken place the character of microwave in the microwave cavity, reflection wave U ' of microwave cavity output, and U ' with the relational expression of incident wave U is:
U ′ = U R c - Z R c + Z
R in the formula cBe the impedance of microwave cavity, Z is the impedance of microwave transmission line (rectangular waveguide).The impedance of microwave cavity is:
R c = R Q
Wherein, R is the resonant resistance of microwave cavity, and Q is the quality factor in chamber.The impedance of microwave transmission line is:
Z = 120 π 1 - ( λ 2 a ) 2
λ in the formula is the resonance wavelength of microwave, and a is the wide of rectangular waveguide.
With reflection wave U ' at ε and β by Taylor series expansion and ignore higher order term, can obtain the expansion of reflection wave U ':
U i ′ = U Q 0 2 β 2 - 1 2 Uf Q 0 ϵ ′ ′ + iU Q 0 β - i 1 2 Uf Q 0 ϵ ′
β is the deviation of resonance frequency in the formula, β = ω - ω ′ ω ′ , ω is the microwave resonance frequency, and ω ' is the resonance frequency after the skew.ε ' and ε " be respectively the real part and the imaginary part of dielectric function, f is a fill factor, curve factor, the ratio of the energy that stores in energy that stores in the expression thin layer crystallite dielectric sample and the microwave cavity:
f = ∫ sample ϵ 0 E 2 dV ∫ cavity ( ϵ 0 E 2 + μ 0 H 2 ) dV
Its value is 0.01～0.1.Second is absorption signal in the expansion, by ε, and " decision is with the photoelectronic concentration n of freedom FreeLinear:
Figure A20071006156000124
Reflection wave absorption signal die-away curve reflects free photoelectron from being generated to the overall process of decay.The 4th is dispersion signal, by ε ' decision, ties up photoelectronic concentration n with weak beam Shallow constraintLinear:
Figure A20071006156000125
, reflection wave dispersion signal die-away curve reflects the constraint photoelectron from being generated to the overall process of decay.First and the 3rd is the influence that frequency departure brings, relevant with the signal to noise ratio (S/N ratio) of system, can be suppressed when signal extraction.Separate absorption signal and the dispersion signal that detects reflection wave U ' by phase sensitive system, just can obtain dissimilar photoelectronic attenuation and life information.
Microwave phase sensitivity of the present invention is examined then, and the detection principle of part 2 is: the input end of two frequency mixer 10,13 respectively has the reflected signal U of a microwave sounding signal i' (t), it is by containing the electric field signal A that tested layer material dielectric function changes iSin (ω t+  i) and outside noise signal n i(t) two parts are formed, and U is arranged i(t)=A iSin (ω t+  i) n i(t); The other input end of two frequency mixer divides microwave reference signal a: U in addition r(t)=A rSin (ω t+  r) and
Figure A20071006156000131
In each frequency mixer, detectable signal and reference signal are carried out mixing, after handling through phase sensitive detection, obtain S as a result 0And S 0' be:
Figure A20071006156000132
With
Figure A20071006156000133
= in the formula i- rBe detectable signal and reference signal phasic difference,
Figure A20071006156000134
It is two-way reference signal phase differential.
By regulating two phase shifters 18,12, make the two-way reference signal phase differential of input mixer α = π 2 , can be from two frequency mixer respectively will with input field phase identical (=0) and quadrature
Figure A20071006156000136
Detectable signal separate.The detectable signal identical with the input field phase reflects the absorbing state of sample to microwave field, and reflects the dispersion situation of sample to microwave field with the detectable signal of importing the field phase quadrature.
Microwave phase-sensitive detection part of the present invention 2 is by the microwave output circuit, mixting circuit, the detectable signal circuit is formed, the microwave output circuit is by microwave source 6, isolator 7, power divider 8 connects successively, mixting circuit is made up of two parallel frequency mixer, they comprise isolator 9 respectively, frequency mixer 10 and isolator 11, phase shifter 12, frequency mixer 13, the detectable signal circuit is by attenuator 14, circulator 15, power divider 16 connects to form successively, the power divider 8 of microwave output circuit respectively with the isolator 9 of mixting circuit, 11, the attenuator 14 of detectable signal circuit is connected, the other end of mixting circuit is connected with the power divider 16 of detectable signal circuit, the circulator 15 of detectable signal circuit is connected with microwave cavity 5, at the power divider 8 of microwave output circuit and the isolator 9 of mixting circuit, be connected with phase shifter 18 between 11, circulator 15 also is connected to matched load 17.
The balanced mixer that the identical frequency mixer 10,13 of 9,11 and two performances of above-mentioned two isolators constitutes is as the phase-sensitive detection device.The microwave that microwave source 6 sends is divided into two-way through isolator 7 and by power divider 8.Wherein one the tunnel is divided into two-way again as the reference signal, this two-way reference signal is identical signal, a route phase shifter 12 controls wherein make itself and another road differ 90, and the two-way reference signal is carried out mixing output with the two-way reflected signal that comes from microwave cavity 5 in two frequency mixer 10,13; The reference wave constant amplitude is added on two frequency mixer orthogonally, and reflection wave constant amplitude homophase is added on the frequency mixer; Frequency mixer plays phase sensitive detection, and Signal Separation quadrature identical with the input field phase can be opened, and by pyron detector the variation of microwave power is converted into the variation of output voltage signal then, thereby distinguishes and detected the behavior of different charge carriers.
Data acquisition process part 3 of the present invention is made up of prime amplifier 19 (optimum bandwidth requires to be 800MHz that minimum is 300MHz), digital fluorescence oscilloscope 20 and computing machine.
The present invention selects suitable microwave resonance frequency, has designed special microwave cavity 5, makes the natural quality factor in chamber and the requirement that resolution is fit to detect crystallite medium layer material.Selecting the frequency of microwave source 6 is (Q-band) 35.4GHZ, swept frequency range ± 500MHZ, and the range of adjustment of frequency is 22.3GHz～47.3GHz, the whenever mobile 0.01mm of frequency modulation milscale, resonance frequency changes 25MHz; The microwave source output power is 114mW～152mW.The frequency of operation of microwave source 6 and the adjusting of output power are done and are divided chi whenever mobile 0.001mm by another milscale control, and the frequency of operation of microwave source 6 changes 7MHz.Select the microwave cavity moderate dimensions, the long L=13.416 millimeter of microwave cavity, wide w=15.000 millimeter, high h=3.556 millimeter.In order to strengthen the interaction of microwave and silver halide material, adopt TE 103Mode of oscillation, it is comparatively concentrated that the sky internal electric field is distributed.In order to guarantee that microwave cavity has good conductive properties, and suppress the influence of the unevenness in chamber to the microwave mode of operation, the microwave resonance inner cavity surface has plated one deck silver.The present invention has guaranteed the high Q value and the high time resolution of device to the design of microwave cavity 5: 1, the natural quality factor in chamber is～10 3Magnitude, loaded quality factor remains on 100～200, the interaction of microwave field and thin-layer microcrystal medium material is stronger.2, the temporal resolution in chamber is at nanosecond order, and the variation of microwave field can accurately reflect the change of dielectric material performance, and testing result has very high accuracy and reliability.
The selected microwave cavity 5 of the present invention adopts the combination of electric dipole and magnetic dipole to realize the energy coupling of microwave cavity 5, and the core of power coupler unit is an energy coupling aperture.Light well is opened in the sidewall of microwave cavity 5, the selection of light well 25 positions guarantees less to the influence of midfield, chamber, and be placed into sample 21 in the chamber by the hole and be positioned at the strength of electric field action, be applicable to the detection of the medium layer material that the crystallite of Discrete Distribution constitutes.
The method of detection thin-layer microcrystal medium material photoelectronic property of the present invention is based on the microwave absorbing technology, utilize the phase sensitivity system to obtain free photoelectron of thin layer crystallite dielectric sample and the photoelectronic attenuation process information of constraint, analyze the photoelectron life-span that these information just can accurately be calculated the thin layer micro crystal material of surveying.The phase sensitivity system passes through the phase change after differentiation signal wave and the reference wave mixing, has realized that the separation of dissimilar charge carrier information detects.The present invention has realized the different photo-generated carriers of thin-layer microcrystal medium material---free photoelectron and the photoelectronic real non-destructive of constraint are measured, can be applied in the manufacture of materials flow process, the monitoring quality of materials also can be applicable to the research field to thin-layer microcrystal medium material sensitization mechanism and luminescence mechanism in real time.

Claims (6)

1. the photoelectron characteristic detecting method of a thin-layer microcrystal medium material, it is by the microwave reflection ripple of thin-layer microcrystal medium material under the detection laser irradiation, utilize phase sensitive system to obtain that reflection wave that the material photo-generated carrier causes absorbs and the variation of dispersion signal, promptly corresponding free photoelectron and the photoelectronic attenuation process of constraint, in the photoelectron life-span by die-away curve calculates the thin-layer microcrystal medium material of surveying, it is characterized in that adopting following steps to carry out:
A. thin-layer microcrystal medium material sample (21) is placed in the microwave cavity (5) by light well (25);
B. the microwave that sends of microwave source is divided into two-way through isolator and by power divider, wherein conduct is imported two balanced mixers with reference to the signal constant amplitude behind one tunnel process phase shifter, another road through attenuator and circulator, enters microwave cavity as detectable signal;
C. utilize the thin-layer microcrystal medium material in the fast pulse laser radiation microwave cavity;
D. the reflection wave of the detection microwave in the microwave cavity is a detectable signal, through circulator and power divider, imports two balanced mixers after it is exported from microwave cavity;
E. two balanced mixers with reference signal and detectable signal mixing after, utilize the phase sensitivity technology to isolate microwave absorbing signal and dispersion signal, the variation of absorption signal and dispersion signal power is converted into the variation of output voltage;
F. output voltage is changed through noting output voltage by digital oscilloscope after the preposition amplification system, be input to then in the computing machine, obtain amplitude fading curve free and the constraint photoelectron signal.
2. the photoelectron characteristic detecting method of thin-layer microcrystal medium material according to claim 1, it is characterized in that: the reference signal of described two balanced mixers has 90 ° of phasic differences, and the detectable signal that is input to two balanced mixers is the constant amplitude in-phase signal.
3. the photoelectron characteristic detecting method of thin-layer microcrystal medium material according to claim 2 is characterized in that: the free photoelectronic decay of the variation respective material of described absorption signal, the photoelectronic decay of the corresponding constraint of the variation of dispersion signal.
4. the photoelectron characteristic detecting method of thin-layer microcrystal medium material according to claim 3 is characterized in that the frequency of two described microwave sources is (Q-band) 35.4GHz, adopts the TE103 mode of oscillation, laser pulse width 35ps.
5. device of realizing above-mentioned thin-layer microcrystal medium material photoelectron characteristic detecting method, it is characterized in that: it is made up of laser radiation part [1], microwave phase-sensitive detection part [2], data acquisition process part [3];
Laser radiation part [1] is made up of laser instrument [4] and microwave cavity [5], and the laser beam of laser instrument [4] output enters microwave cavity by the light well of microwave cavity [5], and microwave cavity [5] is connected with microwave phase-sensitive detection part [2];
Microwave phase-sensitive detection part [2] is by the microwave output circuit, mixting circuit, the detectable signal circuit is formed, the microwave output circuit is by microwave source [6], isolator [7], power divider [8] connects successively, mixting circuit is made up of two parallel frequency mixer, they comprise isolator [9] respectively, frequency mixer [10] and isolator [11], phase shifter [12], frequency mixer [13], the detectable signal circuit is by attenuator [14], circulator [15], power divider [16] connects to form successively, the power divider of microwave output circuit [8] respectively with the isolator [9] [11] of mixting circuit, the attenuator of detectable signal circuit [14] is connected, the other end of mixting circuit is connected with the power divider [16] of detectable signal circuit, the circulator of detectable signal circuit [15] is connected with microwave cavity [5], is connected with phase shifter [18] between the isolator [9] [11] of the power divider [8] of microwave output circuit and mixting circuit;
The data acquisition process part is made up of prime amplifier [19], oscillograph [20], the output signal end of the frequency mixer [10] [13] of the input termination microwave phase-sensitive detection part of prime amplifier [19], the output termination oscillograph [20] of prime amplifier [19].
6. a kind of device of realizing above-mentioned thin-layer microcrystal medium material photoelectron characteristic detecting method according to claim 5, it is characterized in that: its microwave cavity [5] adopts the combination of electric dipole and magnetic dipole, light well is opened in the sidewall of microwave cavity [5], the long L=13.416 millimeter of microwave cavity [5], wide w=15.000 millimeter, high h=3.556 millimeter, microwave cavity [5] inside surface coating silver.
CNA2007100615608A 2007-03-06 2007-03-06 Photoelectron characteristic detecting method for thin-layer microcrystal medium material and device thereof Pending CN101017145A (en)

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CN111103316A (en) * 2018-10-25 2020-05-05 中国科学院上海硅酸盐研究所 Calculation method for non-conductive ceramic material non-charge balance voltage
CN111103316B (en) * 2018-10-25 2021-05-25 中国科学院上海硅酸盐研究所 Calculation method for non-conductive ceramic material non-charge balance voltage
CN113125794A (en) * 2021-03-29 2021-07-16 核工业西南物理研究院 Target pill speed measuring system based on microwave double-resonant cavity technology
CN117949727A (en) * 2024-03-25 2024-04-30 深圳市瀚强科技股份有限公司 Microwave wavelength detection device and microwave output equipment
CN117949727B (en) * 2024-03-25 2024-06-04 深圳市瀚强科技股份有限公司 Microwave wavelength detection device and microwave output equipment

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