CN101008694A - Design and manufacture technology of optical switch - Google Patents

Abstract

This invention relates to light switch design and process method in fiber communication and micro process technique, which comprises the following steps: a, using LPCVD low pressure chemical depositing double side polish silicon slice stress force silicon nitride thickness; b, positive etching nitride hanging beam pattern; c, RIE reaction ion etch forming nitride hanging beam pattern; d, back etching erosion window and fiber groove erosion window; e, RIE reaction ion etches window and fiber groove window; f, coating light etches electron beam to evaporate metal film; g, developing and peeling gold electrode; h, KOH resolution forms nitride handing beam and fiber group under 80 degree for eight hour; I, etching beam to form down electrode board; j, binding two slices of silicon.

Description

A kind of light switch design and manufacture craft

Technical field

The present invention relates to optical-fibre communications and Micrometer-Nanometer Processing Technology field, particularly a kind of light switch design and manufacture craft.

Background technology

Photoswitch is the optical device of outbalance, and it can carry out the selective switch operation to light signal in optical network system.Though traditional mechanical optical switch cross-talk is little, good reproducibility, it is low to insert loss, and price is relatively cheap, along with the development of modern optical communication, requires light shutter device to have higher operating rate, lower insertion loss and longer mission life.

Summary of the invention

The present invention proposes a kind of photoswitch based on low stress membrane technology and fine process, be characterized in that structure and processing technology are simple, cost is low, can be integrated, low driving voltage, switching speed height, biggest advantage is the coupling precision problem that has solved optical fiber by simple back side grooving method.

Principle of work:

Among Fig. 1,1, gold electrode 2, low stress nitride silicon thin film 3, incident optical 4 monocrystalline silicon 5 gold electrodes 6 monocrystalline silicon 7 receive optical fiber.

Incident light enters from 3 (incident opticals) as shown in Figure 1, and by 1, thereby making alive drives 2 and makes 2 actions downwards block the light that come from 3 (optical fiber) on the electrode between 5, has realized the function of closing; Add reverse voltage and make 2 to upspring and realize the function open between 1,5, (receive optical fiber penetrates light from 7.

Description of drawings

Fig. 1 is the optical switch construction synoptic diagram.

Fig. 2-the 7th, light switch design of the present invention and production process charts.

Embodiment

Fig. 2-the 7th, light switch design of the present invention and manufacture craft, its process is as follows:

Manufacture craft flow process such as Fig. 2

A is with LPCVD (low pressure chemical meteorological deposit) 2 microns of two-sided deposit low stress nitride silicon thicknesses on (100) of twin polishing silicon chip;

The b positive etching nitride hanging beam pattern; As Fig. 3

CRIE (reactive ion etching) forms silicon nitride cantilevers beam figure;

The d back side makes corrosion window and optical fiber guttering corrosion window by lithography;

ERIE (reactive ion etching) forms corrosion window and optical fiber guttering corrosion window;

Photoetching of f gluing and electron beam evaporation gold thin film;

G develops and peels off the formation gold electrode; As Fig. 4

H KOH (30%) solution corrodes down at 80 degrees centigrade and formed silicon nitride cantilevers beam and optical fiber groove in 8 hours; As Fig. 5

The formation bottom crown is peeled off in i photoetching, electron beam evaporation; As Fig. 6

J key and two silicon chips.As Fig. 7.

Claims (3)

1. light switch design and manufacture craft, its step is as follows:

A is deposited on two-sided deposit low stress nitride silicon thickness on the silicon chip of twin polishing with LPCVD low pressure chemical meteorology;

The b positive etching nitride hanging beam pattern;

The cRIE reactive ion etching forms silicon nitride cantilevers beam figure;

The d back side makes corrosion window and optical fiber guttering corrosion window by lithography;

The eRIE reactive ion etching forms corrosion window and optical fiber guttering corrosion window;

Photoetching of f gluing and electron beam evaporation gold thin film;

G develops and peels off the formation gold electrode;

HKOH solution corrodes down at 80 degrees centigrade and formed silicon nitride cantilevers beam and optical fiber groove in 8 hours;

The formation bottom crown is peeled off in i photoetching, electron beam evaporation;

J key and two silicon chips.

2. according to the light switch design and the manufacture craft of claim 1, it is characterized in that silicon nitride thickness is 2 microns.

3. according to the light switch design and the manufacture craft of claim 1, it is characterized in that KOH solution is 30%.

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