CN101447369B - Manufacture method of Ti-based MEMS mechanical relay - Google Patents

Manufacture method of Ti-based MEMS mechanical relay Download PDF

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Publication number
CN101447369B
CN101447369B CN2008102405929A CN200810240592A CN101447369B CN 101447369 B CN101447369 B CN 101447369B CN 2008102405929 A CN2008102405929 A CN 2008102405929A CN 200810240592 A CN200810240592 A CN 200810240592A CN 101447369 B CN101447369 B CN 101447369B
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China
Prior art keywords
substrate
glass
titanium
mems
mechanical relay
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Expired - Fee Related
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CN2008102405929A
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Chinese (zh)
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CN101447369A (en
Inventor
陈兢
舒琼
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Peking University
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Peking University
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Priority to CN2008102405929A priority Critical patent/CN101447369B/en
Publication of CN101447369A publication Critical patent/CN101447369A/en
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Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00Contacts
    • H01H1/0036Switches making use of microelectromechanical systems [MEMS]
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00523Etching material
    • B81C1/00547Etching processes not provided for in groups B81C1/00531 - B81C1/00539
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00Specific applications of microelectromechanical systems
    • B81B2201/01Switches
    • B81B2201/012Switches characterised by the shape
    • B81B2201/018Switches not provided for in B81B2201/014 - B81B2201/016

Abstract

The invention discloses a manufacture method of a Ti-based MEMS mechanical relay, which belongs to the field of MEMS micromachining technology. The method comprises the following steps: patterning a Ti substrate by photolithography to form shallow grooves; selecting glass with a thermal expansion coefficient matched with that of Ti, and preparing a metal connection line on the glass surface; subjecting the Ti substrate and the glass substrate to anodic bonding; and thinning the back of the Ti substrate, patterning by photolithography, and deep-etching to break through the Ti substrate to form the MEMS mechanical delay. By anodic bonding, chemical-mechanical polishing and deep etching, the method can manufacture a three-dimensional Ti movable structure with low cost, high accuracy and high depth-to-width ratio on the glass substrate, thereby obtaining the Ti-based MEMS mechanical relay.

Description

A kind of preparation method of the MEMS mechanical relay based on Titanium
Technical field
The invention relates to microelectromechanical systems (MEMS) micro-processing technology, be specifically related to a kind of preparation method of the MEMS mechanical relay based on Titanium.
Background technology
Micro-mechanical relay relies on machinery to move and realizes the relay of signal transmssion line is controlled, have the incomparable advantages of CMOS relay such as low Insertion Loss, high linearity, high-isolation.Development along with MEMS (microelectromechanical systems) technology, in enormous quantities on same substrate, low-cost, the integrated milli machine structure of relay/relay that comprises of high density becomes possibility, but the MEMS relay all uses silicon as structural material at present, the electric conductivity of silicon materials own is not good, so need form layer of metal at the side wall contact-making surface, common deposition process is difficult to finish side wall and covers, though employing parcel plating, sputter, methods such as evaporation, or use special process such as Shadow Mask can form side wall to cover, but the quality of film is still not as planar growth, work long hours and to cause contact to be lost efficacy, comprise that contact point merges the contact resistance that causes of degenerating of can't turn-offing and contact cause and increases sharply even insulation, when big electric current of transmission and use heat driving relay, Problem of Failure is especially serious.
Traditional relay all uses metal as structural material, and its function and reliability are through a large amount of practice tests.If can use metal material to make the MEMS relay, not only can solve the contact resistance problem, can also reduce thrashing.Compare with silicon, metal material not only has good conductivity, also has good ductility and impact strength, and its fracture toughness uses its reliability of the movable contact of metal material making parts higher usually than high two orders of magnitude of silicon materials.But, also there is not a kind of method of maturation at present for the processing of the metal micro-mechanical relay of high-aspect-ratio.
Summary of the invention
The present invention has overcome deficiency of the prior art, and a kind of preparation method of the MEMS mechanical relay based on Titanium is provided.
Technical scheme of the present invention is:
A kind of preparation method of the MEMS mechanical relay based on Titanium, its step comprises:
1) to titanium substrate photolithography patterning, etching forms shallow slot;
2) glass of selecting thermal coefficient of expansion and titanium to mate is at the surface preparation metal connecting line of glass;
3) anode linkage is carried out in titanium substrate and substrate of glass;
4) thinning back side is carried out in the titanium substrate, photolithography patterning, and lose deeply, the substrate of break-through titanium forms the MEMS mechanical relay.
Described glass is D263T, soda-lime glass, FOTURAN glass, B270 glass.
The height of the shallow slot that described step 1) forms is 5 μ m-10 μ m.
The parameter of described Titanium substrate and substrate of glass anode linkage can be: temperature 350-450 ℃, and voltage 350-750V, pressure 1000-2000N.
Deep erosion described in the described step 4) is specially, and etching gas is a chlorine, and etching parameters is: coil power 300-500W, dull and stereotyped power 50W-200W, gas flow 30-70sccm.
Compared with prior art, the invention has the beneficial effects as follows:
By technologies such as the deep erosions of titanium-glass anode linkage, chemico-mechanical polishing and titanium, can on glass substrate, realize the processing of the Titanium three-dimensional Ti movable structure of low cost, high accuracy, high-aspect-ratio, thereby realize MEMS mechanical relay based on Titanium.
Description of drawings
Fig. 1 is the process chart of preparation MEMS mechanical relay of the present invention.
Embodiment
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail:
One, the preparation of substrate: select for use the titanium substrate as structural material; The substrate of glass of selecting thermal coefficient of expansion and titanium substrate (thermal coefficient of expansion is 8.6-9.4ppm/ ℃) coupling for use is as substrate, such as D263T glass (7.2), soda-lime glass (9.4), FOTURAN glass (8.6), B270 glass (9.4) etc.
Two, titanium substrate surface photolithography patterning, and etching forms shallow slot, and is dark as 5-10 μ m, as Fig. 1 (a).
Three, glass surface deposit layer of metal, such as the gold of 200nm, copper etc., photolithography patterning forms metal connecting line, as Fig. 1 (b).
Four, titanium substrate and substrate of glass are carried out anode linkage, and as Fig. 1 (c), bonding parameter is: temperature 350-450 ℃, and voltage 350-750V, pressure 1000-2000N, vacuum continues 30min.
Five, titanium substrate attenuate, and lose deeply, with the break-through of titanium substrate etching;
Be specially, titanium substrate attenuate by the method for chemico-mechanical polishing, is thinned to suitable thickness with substrate, as 20-100 μ m (Fig. 1 d).
Then, mask is lost in the deposit of titanium substrate surface deeply, as SU8 photoresist, metal or the oxide hardmask etc. of thick about 20 μ m, and graphical;
By deep erosion, with titanium substrate etching break-through (Fig. 1 e), etching gas is a chlorine, and etching parameters is: coil power 300-500W, dull and stereotyped power 50-200W, gas flow 30-70sccm, air pressure 3mT.
More than by specific embodiment the preparation method of MEMS mechanical relay provided by the present invention has been described, it will be understood by those of skill in the art that in the scope that does not break away from essence of the present invention, can make certain deformation or modification to the present invention; Its preparation method also is not limited to disclosed content among the embodiment.

Claims (5)

1. preparation method based on the MEMS mechanical relay of Titanium, its step comprises:
1) to titanium substrate photolithography patterning, etching forms shallow slot;
2) the selection thermal coefficient of expansion is 8.6-9.4ppm/ ℃ a glass, at the surface preparation metal connecting line of glass;
3) anode linkage is carried out in titanium substrate and substrate of glass;
4) thinning back side is carried out in the titanium substrate, photolithography patterning, and lose deeply, the substrate of break-through titanium forms the MEMS mechanical relay.
2. preparation method as claimed in claim 1 is characterized in that, described glass is soda-lime glass, FOTURAN glass or B270 glass.
3. preparation method as claimed in claim 1 or 2 is characterized in that, the height of the shallow slot that described step 1) forms is 5 μ m-10 μ m.
4. preparation method as claimed in claim 1 or 2 is characterized in that, the parameter of described titanium substrate and substrate of glass anode linkage is: temperature 350-450 ℃, and voltage 350-750V, pressure 1000-2000N.
5. preparation method as claimed in claim 1 or 2 is characterized in that, deep erosion described in the described step 4) is specially, and etching gas is a chlorine, and etching parameters is: coil power 300-500W, dull and stereotyped power 50W-200W, gas flow 30-70sccm.
CN2008102405929A 2008-12-25 2008-12-25 Manufacture method of Ti-based MEMS mechanical relay Expired - Fee Related CN101447369B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2008102405929A CN101447369B (en) 2008-12-25 2008-12-25 Manufacture method of Ti-based MEMS mechanical relay

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN2008102405929A CN101447369B (en) 2008-12-25 2008-12-25 Manufacture method of Ti-based MEMS mechanical relay
PCT/CN2009/001163 WO2010072044A1 (en) 2008-12-25 2009-10-20 Method for preparing a micro-electro-mechanical systems mechanical relay based on metallic titanium

Publications (2)

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CN101447369A CN101447369A (en) 2009-06-03
CN101447369B true CN101447369B (en) 2011-11-09

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WO (1) WO2010072044A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101447369B (en) * 2008-12-25 2011-11-09 北京大学 Manufacture method of Ti-based MEMS mechanical relay
CN102044380A (en) * 2010-12-31 2011-05-04 航天时代电子技术股份有限公司 Metal MEMS (micro-electromechanical system) electromagnetic relay
CN102938350B (en) * 2012-11-23 2014-12-03 北京大学 Micro-impulse breaker capable of prolonging contact time and producing method thereof

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* Cited by examiner, † Cited by third party
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EP1110905A1 (en) * 1999-12-24 2001-06-27 SensoNor asa Micro-electromechanical device
US6582985B2 (en) * 2000-12-27 2003-06-24 Honeywell International Inc. SOI/glass process for forming thin silicon micromachined structures
CN100494046C (en) * 2006-03-10 2009-06-03 中国科学院上海微系统与信息技术研究所 Structure and production of air-sealed packaged micromechanical system device with convex point connection
TWI299787B (en) * 2006-04-06 2008-08-11 Touch Micro System Tech Micro sample heating apparatus and method of making the same
CN101447369B (en) * 2008-12-25 2011-11-09 北京大学 Manufacture method of Ti-based MEMS mechanical relay

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WO2010072044A1 (en) 2010-07-01

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