CN101005065A - Light emitting semiconductor module with by-path turn-on switch - Google Patents
Light emitting semiconductor module with by-path turn-on switch Download PDFInfo
- Publication number
- CN101005065A CN101005065A CNA2006100015271A CN200610001527A CN101005065A CN 101005065 A CN101005065 A CN 101005065A CN A2006100015271 A CNA2006100015271 A CN A2006100015271A CN 200610001527 A CN200610001527 A CN 200610001527A CN 101005065 A CN101005065 A CN 101005065A
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- switch
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/50—Circuit arrangements for operating light-emitting diodes [LED] responsive to malfunctions or undesirable behaviour of LEDs; responsive to LED life; Protective circuits
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/40—Details of LED load circuits
- H05B45/44—Details of LED load circuits with an active control inside an LED matrix
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
The disclosed luminous semiconductor module possessing bypass switch is a device capable of turning on current under light emitting diode (LED) unit being in open-circuit condition. Possessing multiple end points, the semiconductor module includes at least a LED unit, and a built in switch with bypass conduction function. Whenever any one LED unit occurs open-circuit condition, the switch with bypass conduction function will activates bypass conduction function in order to turn on current.
Description
Technical field
The present invention relates to the light-emitting semi-conductor components of a kind of led designs or manufacturing and the application product of being derived thereof.
Background technology
The situation that causes at present an a string LED or a row LED normally to use in the light-emitting diode industry has following two kinds, and one is that arbitrary LED short circuit of working as in the serial or parallel connection causes LED normally to use.Another for the arbitrary LED open circuit in the serial or parallel connection cause electric current can't conducting to other LED of serial or parallel connection.
In order to overcome the difficulty of known technology, the present invention adds the switch of an intelligent tool by-path turn-on function, cause LED to be issued to the purpose of current lead-through in open-circuit condition, the LED that therefore helps to guarantee other normal operation is not opened a way and non-luminous LED influences and still can see through the current lead-through normal operation.
Summary of the invention
The object of the present invention is to provide a kind of light-emitting semi-conductor components of tool by-path turn-on switch, the LED of normal operation is not opened a way and non-luminous LED influences and still can see through the current lead-through normal operation.
The light-emitting semi-conductor components of tool by-path turn-on switch of the present invention mainly comprises the switch of one first end points, one second end points, at least one light emitting diode and a tool by-path turn-on function.Each light emitting diode is made up of one or more LED crystal particle, and has one first electrode and one second electrode, is connected to this first end points and this second end points respectively.By applying voltage or electric current in this first end points and this second end points, this light emitting diode can be lighted, if light emitting diode then can't be luminous when open-circuit condition.The switch of tool by-path turn-on function has first electrode and second electrode, is connected to first end points and second end points of this light-emitting semi-conductor components respectively.
Light emitting diode is switched under normal current or voltage when luminous, and the switch of tool by-path turn-on function is in closed condition (Off) and no current is flowed through.When light emitting diode is in open circuit when not luminous, an electronic signal be will produce, and first electrode and second electrode of the switch of tool by-path turn-on function will be sent to, make the switch of tool by-path turn-on function be in opening (On) and have electric current to flow through.By this, but first end points of light-emitting semi-conductor components and the second end points holding current conducting state.
The present invention also can several are above-mentioned light-emitting semi-conductor components be connected with a power supply, form a series connection or a shunt circuit.When the arbitrary light emitting diode in the light-emitting semi-conductor components is in open-circuit condition and when not luminous, the switch of corresponding tool by-path turn-on function can be in opening (On).By this, but the electric current in whole serial or parallel connection loop keeps conducting state.
Description of drawings
Fig. 1 is of the present invention overlooking and functional schematic
Fig. 2 is the functional schematic of light emitting diode of the present invention
Fig. 3 is the functional schematic of the switch of tool by-path turn-on function of the present invention
Fig. 4 is that circuit of the present invention is in the current direction schematic diagram of opening (On)
Fig. 5 is that circuit of the present invention is in the current direction schematic diagram of closed condition (Off)
Fig. 6 is the online schematic diagram of circuit of the present invention
Fig. 7 is a serial connection application circuit schematic diagram of the present invention
Fig. 8 is for of the present invention and scoop out and use circuit diagram
Symbol description
1, first end points of 1 ' light-emitting semi-conductor components, 2 light-emitting semi-conductor components
Second end points, 4 light emitting diodes of 3 light-emitting semi-conductor components
Second electrode of first electrode, 6 light emitting diodes of 5 light emitting diodes
The switching device of 7 tool by-path turn-on functions
First electrode of the switch of 8 tool by-path turn-on functions
Second electrode of the switch of 9 tool by-path turn-on functions
10 LED crystal particle, 11 voltage detection circuits
12 electronic switching circuits, 13 power supplys
Embodiment
The light-emitting semi-conductor components of tool by-path turn-on switch of the present invention mainly comprises the switch of one first end points, one second end points, at least one light emitting diode and a tool by-path turn-on function.Each light emitting diode is made up of one or more LED crystal particle, and has one first electrode and one second electrode, is connected to light-emitting semi-conductor components first end points and second end points respectively.By applying voltage or electric current in first end points and this second end points, light emitting diode can be lighted; But if light emitting diode then can't be luminous when open-circuit condition.The switch of tool by-path turn-on function also has first electrode and second electrode, also is connected to first end points and second end points of light-emitting semi-conductor components respectively.
Light emitting diode is switched under normal current or voltage when luminous, and the switch of tool by-path turn-on function is in closed condition (Off) and no current is flowed through.When light emitting diode is in open circuit when not luminous, an electronic signal be will produce, and first electrode and second electrode of the switch of tool by-path turn-on function will be sent to, make the switch of tool by-path turn-on function be in opening (On) and have electric current to flow through.By this, but first end points of light-emitting semi-conductor components and the second end points holding current conducting state.
Below describe conjunction with figs. in detail circuit framework of the present invention and mode of operation.
Fig. 1 (a) shows that light-emitting semi-conductor components 1 of the present invention has at least two end points, and wherein two are defined as first end points 2 and second end points 3.Still the switch 7 that comprises at least one light emitting diode 4 and a tool by-path turn-on function in this light-emitting semi-conductor components 1.
Each light emitting diode 4 is made up of one or more LED crystal particle 10 shown in Figure 2; Each light emitting diode 4 has first electrode 5 and second electrode 6, is connected to first end points 2 and second end points 3 of light-emitting semi-conductor components 1 respectively.
By imposing voltage or electric current, can light each light emitting diode 4, if light emitting diode 4 then can't be luminous when open-circuit condition in first end points 2 and second end points 3.
The switch 7 of tool by-path turn-on function is made by integrated circuit usually, and has first electrode 8 and second electrode 9, is connected to first end points 2 and second end points 3 of above-mentioned light-emitting semi-conductor components 1 respectively.The switch 7 of tool by-path turn-on function also comprises as shown in Figure 3 voltage detection circuit 11 and electronic switching circuit (switch circuit) 12.When the switch 7 of tool by-path turn-on function is in " closed condition (Off) ", just do not have a conducting function; And when the switch 7 of this tool by-path turn-on function is in " opening (On) ", then have a conducting function.
By imposing first electrode 8 and second electrode 9 of electronic signal in switch 7, but the current lead-through function of activator switch 7; And this electronic signal is to produce when light emitting diode 4 is in open-circuit condition.This electronic signal has a magnitude of voltage usually, and when magnitude of voltage was lower than a predeterminated voltage value, switch 7 was not activated and is in closed condition (Off); When magnitude of voltage was not less than this predeterminated voltage value, switch 7 was activated and enters opening (On), and allowed the electric current switch 7 of flowing through.
Fig. 1 (b) shows that the light emitting diode 4 and the electrode of the switch 7 of tool by-path turn-on function have common contact, therefore also can be by the current lead-through of switch 7 control light emitting diodes 4.
Illustrate among the present invention the design and the function of voltage detection circuit 11 and electronic switching circuit 12 with next.
Below enumerate the electronic switching circuit design that four kinds of the present invention can use.First kind of pnpn switch by four layers of grid current body structure of a PNPN formed, and first P of pnpn switch is connected to the anode of electronic switching circuit, and second N of pnpn switch is connected to the negative electrode of electronic switching circuit.
Second kind of electronic switching circuit is made up of two bipolar transistors (Bipolar Junction Transistor).First bipolar transistor comprises first emitter-base bandgap grading, first base stage, the first collection utmost point; Second bipolar transistor comprises second emitter-base bandgap grading, second base stage, the second collection utmost point.First emitter-base bandgap grading of first bipolar transistor and second bipolar transistor, second emitter-base bandgap grading are connected to the anode and the negative electrode of electronic switching circuit respectively.First base stage of first bipolar transistor is connected to the second collection utmost point of second bipolar transistor.The first collection utmost point of first bipolar transistor is connected to second base stage of second bipolar transistor.
The third electronic switching circuit is made up of two metal-oxide half field effect transistors (MOSFET).First metal-oxide half field effect transistor wherein comprises first source electrode, first grid, first drain electrode; Second metal-oxide half field effect transistor comprises second source electrode, second grid, second drain electrode.First source electrode of first metal-oxide half field effect transistor and second source electrode of this second metal-oxide half field effect transistor are connected to the anode and the negative electrode of electronic switching circuit respectively.The first grid of first metal-oxide half field effect transistor is connected to second drain electrode of second metal-oxide half field effect transistor.First drain electrode of first metal-oxide half field effect transistor then is connected to the second grid of second metal-oxide half field effect transistor.
The 4th kind of electronic switching circuit then is made up of a bipolar transistor and a metal-oxide half field effect transistor.Bipolar transistor comprises an emitter-base bandgap grading, a base stage, a collection utmost point; Metal-oxide half field effect transistor comprises one source pole, a grid, a drain electrode.The emitter-base bandgap grading of bipolar transistor or the source electrode of this metal-oxide half field effect transistor are connected to the male or female of electronic switching circuit.The base stage of bipolar transistor is connected to the drain electrode of metal-oxide half field effect transistor.The collection utmost point of bipolar transistor is connected to the grid of metal-oxide half field effect transistor.
The current conductive state of light-emitting semi-conductor components 1 of the present invention is as follows:
When light emitting diode 4 when normally imposing curtage, light emitting diode 4 is in the conducting luminance; Electric current this light emitting diode 4 of flowing through; At the same time, the switch 7 of tool by-path turn-on function is in " closed condition (Off) ", the switch 7 of this tool by-path turn-on function and electric current can't be flowed through.
2. be in open circuit and not during luminance when light emitting diode 4, electric current this light emitting diode 4 of can't flowing through; At the same time, the switch 7 of tool by-path turn-on function is in " opening (On) ", and electric current is switched on and the switch 7 of this tool by-path turn-on function of flowing through.
Therefore, but in first end points and the eternal holding current conducting state of second end points of above-mentioned light-emitting semi-conductor components 1.
Fig. 4 is that the present invention is in the current direction schematic diagram of " opening (On) ".Among the figure, light emitting diode 4 is in the not luminance of opening a way, electric current this light emitting diode 4 of can't flowing through; At the same time, the switch 7 of tool by-path turn-on function is in " opening (On) ", and electric current is switched on and the switch 7 of this tool by-path turn-on function of flowing through.
Fig. 5 is that the present invention is in the current direction schematic diagram of " closed condition (Off) ".Among the figure, light emitting diode 4 is under the normal operation luminance, electric current this light emitting diode 4 of directly flowing through; At this moment, the switch 7 of tool by-path turn-on function is in " closed condition (Off) ", the switch 7 of this tool by-path turn-on function and electric current can't be flowed through.
Fig. 6 is the online schematic diagram of circuit of the present invention.Among the figure, first electrode 8 of first electrode 5 of light emitting diode 4 and the switch 7 of tool by-path turn-on function is connected to first end points 2 of light-emitting semi-conductor components 1; And second electrode 9 of the switch 7 of second electrode 6 of light emitting diode 4 and tool by-path turn-on function is connected to second end points 3 of light-emitting semi-conductor components 1.
Fig. 7 is a serial connection application circuit schematic diagram of the present invention.Among the figure, second end points 3 of first light-emitting semi-conductor components 1 connects first end points 2 ' of second light-emitting semi-conductor components 1 ' in the serial connection mode; And second end points 3 ' of first end points 2 of first light-emitting semi-conductor components 1 and second light-emitting semi-conductor components 1 ' is connected to power supply 13 individually, to form a loop.
Fig. 8 is for of the present invention and scoop out and use circuit diagram.Among the figure, first end points 2 of first light-emitting semi-conductor components 1 with and the mode that connects connect first end points 2 of second light-emitting semi-conductor components 1 '; And second end points 3 of first light-emitting semi-conductor components 1 with and the mode that connects connect second end points 3 of second light-emitting semi-conductor components 1 '; And first light-emitting semi-conductor components 1 that connects and second light-emitting semi-conductor components 1 are connected to power supply 13 again.
First and second end points of light-emitting semi-conductor components can be attached on the pedestal by the surface mount technology (Surface Mount Technology) of metal wire routing (wire bonding) mode and semiconductor packaging.
From the above, light-emitting semi-conductor components of the present invention is connected with a power supply, can forms a series connection or a shunt circuit.When the arbitrary light emitting diode in the light-emitting semi-conductor components is in open-circuit condition and when not luminous, the switch of corresponding tool by-path turn-on function can be in opening (On).By this, but the electric current in whole serial or parallel connection loop keeps conducting state.
Claims (9)
1. the light-emitting semi-conductor components of a tool by-path turn-on switch, tool is characterised in that, comprising:
One first end points;
One second end points;
At least one light emitting diode, each light emitting diode is made up of one or more LED crystal particle, and have one first electrode and one second electrode, be connected to this first end points and this second end points respectively, by applying voltage or electric current in this first end points and this second end points, this light emitting diode can be lighted, if light emitting diode then can't be luminous when open-circuit condition; And
The switch of one tool by-path turn-on function has first electrode and second electrode, is connected to first end points and second end points of this light-emitting semi-conductor components respectively;
Wherein:
This light emitting diode is switched under normal current or voltage when luminous, and the switch of this tool by-path turn-on function is in closed condition and no current is flowed through; When this light emitting diode is in open circuit when not luminous, to produce an electronic signal, and be sent to first electrode and second electrode of the switch of this tool by-path turn-on function, make the switch of this tool by-path turn-on function be in opening and have electric current to flow through, by this, but first end points of this light-emitting semi-conductor components and the second end points holding current conducting state.
2. light-emitting semi-conductor components as claimed in claim 1 is characterized in that, this first and second end points is that the surface mount technology by metal wire routing mode and semiconductor packaging is attached on the pedestal.
3. light-emitting semi-conductor components as claimed in claim 1 is characterized in that this electronic signal has a magnitude of voltage; When this magnitude of voltage was lower than a predeterminated voltage value, the switch of this tool by-path turn-on function was not activated, and is in closed condition; When this magnitude of voltage was not less than this predeterminated voltage value, the switch of this tool by-path turn-on function was activated, and enters opening, and allowed the flow through switch of this tool by-path turn-on function of electric current.
4. light-emitting semi-conductor components as claimed in claim 1 is characterized in that, the switch of this tool by-path turn-on function is to be made by integrated circuit, and also comprises:
One voltage detection circuit has positive pole, negative pole and gate pole, and this positive pole and negative pole are connected to first electrode and second electrode of the switch of this tool by-path turn-on function respectively; And
One electronic switching circuit has anode, and negative electrode and gate pole, this anode and negative electrode are connected to first electrode and second electrode of the switch of this tool by-path turn-on function respectively, and this grid is connected to the grid of voltage detection circuit;
Wherein:
This voltage detection circuit produces this electronic signal by the detecting change in voltage, and this electronic signal to activate this electronic switching circuit, makes this electronic switching circuit be in opening via the grid of this electronic switching circuit of gate driving of this voltage detection circuit.
5. light-emitting semi-conductor components as claimed in claim 4, it is characterized in that, this electronic switching circuit is made up of the pnpn switch of four layers of grid current body structure of a PNPN, first P of this pnpn switch is connected to the anode of this electronic switching circuit, and second N of this pnpn switch is connected to the negative electrode of this electronic switching circuit.
6. light-emitting semi-conductor components as claimed in claim 4 is characterized in that, this electronic switching circuit is made up of first bipolar transistor and second bipolar transistor; This first bipolar transistor comprises first emitter-base bandgap grading, first base stage, the first collection utmost point, and this second bipolar transistor comprises second emitter-base bandgap grading, second base stage, the second collection utmost point; Wherein:
First emitter-base bandgap grading of this first bipolar transistor and second bipolar transistor, second emitter-base bandgap grading are connected to the anode and the negative electrode of this electronic switching circuit respectively;
First base stage of this first bipolar transistor is connected to the second collection utmost point of this second bipolar transistor;
The first collection utmost point of this first bipolar transistor is connected to second base stage of this second bipolar transistor.
7. light-emitting semi-conductor components as claimed in claim 4 is characterized in that, this electronic switching circuit is made up of first metal-oxide half field effect transistor and second metal-oxide half field effect transistor; This first metal-oxide half field effect transistor wherein comprises first source electrode, first grid, first drain electrode, and this second metal-oxide half field effect transistor comprises second source electrode, second grid, second drain electrode; Wherein:
First source electrode of this first metal-oxide half field effect transistor and second source electrode of this second metal-oxide half field effect transistor are connected to the anode and the negative electrode of this electronic switching circuit respectively;
The first grid of this first metal-oxide half field effect transistor is connected to second drain electrode of this second metal-oxide half field effect transistor;
First drain electrode of this first metal-oxide half field effect transistor is connected to the second grid of this second metal-oxide half field effect transistor.
8. light-emitting semi-conductor components as claimed in claim 4 is characterized in that, this electronic switching circuit is made up of a bipolar transistor and a metal-oxide half field effect transistor; This bipolar transistor comprises an emitter-base bandgap grading, a base stage, a collection utmost point; This metal-oxide half field effect transistor comprises one source pole, a grid, a drain electrode; Wherein:
The emitter-base bandgap grading of this bipolar transistor or the source electrode of this metal-oxide half field effect transistor are connected to the male or female of this electronic switching circuit;
The base stage of this bipolar transistor is connected to the drain electrode of this metal-oxide half field effect transistor;
The collection utmost point of this bipolar transistor is connected to the grid of this metal-oxide half field effect transistor.
9. a light-emitting semiconductor device is that a majority light-emitting semi-conductor components as claimed in claim 1 is connected with a power supply, forms a series connection or a shunt circuit; When the arbitrary light emitting diode in this light-emitting semi-conductor components is in open-circuit condition and when not luminous, the switch of corresponding tool by-path turn-on function can be in opening; By this, but the electric current in whole serial or parallel connection loop keeps conducting state.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2006100015271A CN100521200C (en) | 2006-01-18 | 2006-01-18 | Light emitting semiconductor module with by-path turn-on switch |
EP06007984A EP1814366A1 (en) | 2006-01-18 | 2006-04-18 | Light-emitting semiconductor device with open-bypass function |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CNB2006100015271A CN100521200C (en) | 2006-01-18 | 2006-01-18 | Light emitting semiconductor module with by-path turn-on switch |
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CN101005065A true CN101005065A (en) | 2007-07-25 |
CN100521200C CN100521200C (en) | 2009-07-29 |
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CNB2006100015271A Active CN100521200C (en) | 2006-01-18 | 2006-01-18 | Light emitting semiconductor module with by-path turn-on switch |
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EP (1) | EP1814366A1 (en) |
CN (1) | CN100521200C (en) |
Cited By (4)
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CN102446496A (en) * | 2010-09-03 | 2012-05-09 | 三美电机株式会社 | Backlight apparatus, display apparatus with same and lighting apparatus |
CN103053222A (en) * | 2010-07-09 | 2013-04-17 | 皇家飞利浦电子股份有限公司 | Supervision circuit for organic light emitting diode |
CN112820238A (en) * | 2019-10-30 | 2021-05-18 | 群创光电股份有限公司 | Display device |
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WO2009138907A2 (en) * | 2008-05-13 | 2009-11-19 | Nxp B.V. | Detection of failures within lighting devices |
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Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6318967A (en) * | 1986-07-11 | 1988-01-26 | Toshiba Corp | Controller for cycloconverter |
JPH11178243A (en) * | 1997-12-16 | 1999-07-02 | Mitsubishi Electric Corp | Uninterruptible power supply unit |
US20020043943A1 (en) * | 2000-10-10 | 2002-04-18 | Menzer Randy L. | LED array primary display light sources employing dynamically switchable bypass circuitry |
KR100550856B1 (en) * | 2003-06-03 | 2006-02-10 | 삼성전기주식회사 | Method for manufacturing light emitting diode device |
EP1658757A4 (en) * | 2003-08-27 | 2007-12-26 | Osram Sylvania Inc | Driver circuit for led vehicle lamp |
JP4241487B2 (en) * | 2004-04-20 | 2009-03-18 | ソニー株式会社 | LED driving device, backlight light source device, and color liquid crystal display device |
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2006
- 2006-01-18 CN CNB2006100015271A patent/CN100521200C/en active Active
- 2006-04-18 EP EP06007984A patent/EP1814366A1/en not_active Withdrawn
Cited By (6)
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CN103053222A (en) * | 2010-07-09 | 2013-04-17 | 皇家飞利浦电子股份有限公司 | Supervision circuit for organic light emitting diode |
CN102446496A (en) * | 2010-09-03 | 2012-05-09 | 三美电机株式会社 | Backlight apparatus, display apparatus with same and lighting apparatus |
CN112820238A (en) * | 2019-10-30 | 2021-05-18 | 群创光电股份有限公司 | Display device |
CN112820238B (en) * | 2019-10-30 | 2022-07-01 | 群创光电股份有限公司 | Display device |
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Also Published As
Publication number | Publication date |
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CN100521200C (en) | 2009-07-29 |
EP1814366A1 (en) | 2007-08-01 |
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