CN102208407A - Composite power circuit and bidirectional thyristor - Google Patents
Composite power circuit and bidirectional thyristor Download PDFInfo
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- CN102208407A CN102208407A CN201010143961XA CN201010143961A CN102208407A CN 102208407 A CN102208407 A CN 102208407A CN 201010143961X A CN201010143961X A CN 201010143961XA CN 201010143961 A CN201010143961 A CN 201010143961A CN 102208407 A CN102208407 A CN 102208407A
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Abstract
The invention provides a composite power circuit and a bidirectional thyristor. The composite power circuit comprises at least two functional units which are supplied with power independently. Each functional unit comprises a power wire and a ground wire. The composite power circuit is characterized in that a bidirectional thyristor circuit is coupled between the power wires of any two functional units; and the bidirectional thyristor circuit or a back-to-back bilateral diode group is coupled between the ground wires of any two functional units. The ESD (Electronic Static Discharge) static protection capacity of the composite power circuit is improved.
Description
Technical field
The present invention relates to Electrostatic Discharge protection field, particularly a kind of composite power source circuit and bidirectional thyristor with esd protection ability.
Background technology
Integrated circuit in manufacturing, assembling, test or final application, be easy to be subjected to make or use in destructive Electrostatic Discharge, thereby make integrated circuit be subjected to the damage of static.Therefore usually in integrated circuit; usually can form esd protection circuit; thereby make I/O weld pad (I/O pad) be coupled with the discharge cell that the static on the I/O pad can be discharged, thereby the static on the I/O pad can be discharged, reduce the damage that static brings integrated circuit.
Above-mentioned esd protection pattern only is suitable for having the simple functions unit of single power supply; and for the composite power source circuit, especially in the SOC chip, each functional unit is owing to exist the difference of operating voltage; its power supply is comparatively complicated, and above-mentioned esd protection pattern then can't meet the demands.
Fig. 1 is the circuit diagram of a composite power source circuit, and described composite power source circuit comprises two functional units, and each functional unit is all independently-powered.Wherein comprise the first power line VDD1, the first ground wire GND1 among the first functional unit I; Be coupled to power supply clamp circuit 10 and functional circuit 20 between the first power line VDD1, the first ground wire GND1.The input and output weld pad of described functional circuit 20 (I/O PAD) is coupled with the esd protection unit 21 of the static on can the release function circuit.The basic structure of the second functional unit II is identical with the first functional unit II, and difference only is power pack, comprises second source line VDD2, the second ground wire GND2.Because the first bottom line GND1 and the second ground wire GND2 are when manufacturing, equal based semiconductor substrate so can be considered as by a resistance substrate R between the two in equivalence
SubBe connected.
In above-mentioned each functional unit, the input and output weld pad of functional circuit 20 (I/O PAD) is gone up contingent destructive static discharge phenomenon, all can be released on each self-powered power line or the ground wire by esd protection unit 21.If but destructive static discharge phenomenon is when occurring on the power supply clamp circuit 10, because the power supply of each functional unit is separate, then the esd protection between each functional unit just is difficult to realize.Below be example with an ESD test case.Suppose that the weld pad (VDD1PAD) that is connected with the first power line VDD1 upward adds the ESD electrostatic pulse of forward by test probe in the first functional unit I, and the probe of ground connection is set on the weld pad (VDD2PAD) that is connected with second source line VDD2 in the second functional unit II.If only there is following path in above-mentioned ESD electrostatic pulse derivation: will flow into the first ground wire GND1, by resistance substrate R via the power supply clamp circuit 10 of the first functional unit I
SubFlow into the second ground wire GND2 of the second functional unit II, and then trigger power supply clamp circuit 10 final weld pads (VDD2PAD) derivation from second source VDD2 of the second functional unit II.Need triggering power supply clamp circuit 10 in the above-mentioned path twice, must consider resistance substrate R simultaneously
SubOn pressure drop; Therefore situation about usually occurring is that the ESD electrostatic pulse can not derive from grounded probe as yet, just flows directly in the functional circuit 20, burns out chip.
For fear of the generation of above-mentioned ESD electrostatic breakdown phenomenon, Fig. 2 provides a kind of composite power source circuit with esd protection ability.Its basic structure and circuit shown in Figure 1 are similar, and described composite power source circuit also comprises two functional units, and each functional unit is all independently-powered.Wherein comprise the first power line VDD1, the first ground wire GND1 among the first functional unit I; Be coupled to power supply clamp circuit 10 and functional circuit 20 between the first power line VDD1, the first ground wire GND1.The input and output weld pad of described functional circuit 20 (I/O PAD) is coupled with the esd protection unit 21 of the static on can the release function circuit.The basic structure of the second functional unit II is identical with the first functional unit II, and difference only is power pack, comprises second source line VDD2, the second ground wire GND2.Between described first power line VDD1 and the second source line VDD2, all be coupled with back-to-back bidirectional diode group between the first ground wire GND1 and the second ground wire GND2.Described back-to-back bidirectional diode group comprises two parallel connections and the opposite diode series via of conducting direction, and generally for simplified structure, in a bidirectional diode group, the specification of each diode is all identical, and the number of diodes on two paths is also identical.
Suppose the group of bidirectional diode back-to-back that couples between the first power line VDD1 and the second source line VDD2, every path all is in series with n diode (progression that is diode is n).Because the diode current flow pressure drop is a fixed value V
t, promptly have only the electrical potential difference between the first power line VDD1 and second source line VDD2 to surpass nV
tThe time, a diode series via in the above-mentioned group of bidirectional diode is back-to-back just understood conducting, and specifically two ends power line electrical potential difference height is depended in which bar path conducting.Otherwise, if the electrical potential difference between two power lines is less than nV
tThe time, the not conducting of the then above-mentioned group of bidirectional diode back-to-back.Therefore, when the specification of choosing diode and progression, only need to make the electrical potential difference between the first power line VDD1 and second source line VDD2 when the conducting electrical potential difference is greater than composite power source circuit operate as normal on the wall scroll path of bidirectional diode group back-to-back and when producing less than the ESD electrostatic breakdown electrical potential difference between the said power get final product.Also adopt above-mentioned same equipping rules for the group of bidirectional diode back-to-back between the first ground wire GND1 and the second ground wire GND2.When composite power source circuit operate as normal, because the conducting voltage nV of any path of the above-mentioned group of bidirectional diode back-to-back
tAll greater than the electrical potential difference between power line or the ground wire, therefore all not conductings of above-mentioned bidirectional diode group, promptly the first functional unit I and the second functional unit II independence of powering when operate as normal is not disturbed mutually.
Be example with an ESD test case equally below, suppose that the weld pad (VDD1PAD) that is connected with the first power line VDD1 upward adds the ESD electrostatic pulse of forward by test probe in the first functional unit I, and the probe of ground connection is set on the weld pad (VDD2PAD) that is connected with second source line VDD2 in the second functional unit II.Then the shortest path that above-mentioned ESD electrostatic pulse is derived also is that the impedance minimal path is: via the first power line VDD1, flow to second source line VDD2 by bidirectional diode group back-to-back, finally the weld pad (VDD2PAD) from the second source VDD2 is derived.Because the higher conducting voltage that is easy to surpass the described group of bidirectional diode back-to-back of the voltage of ESD electrostatic pulse, thus described composite power source circuit when above-mentioned test, the ESD electrostatic pulse will be derived immediately, realization is to the esd protection of functional circuit 20.
There are the following problems for existing composite power source circuit with power supply esd protection ability: owing to need increase diode group back-to-back between power line/ground wire, described each path diode in series will take a large amount of chip areas, the pressure drop of single diode is limited in one's ability, when the operating voltage between the functional unit in the composite power source circuit differs big, the above-mentioned group of diode back-to-back will adopt the diode of big PN junction area, cause the growth of chip area; Perhaps adopt more diode progression, further cause the difficulty of composite power source circuit in wiring.In addition, when big ESD electrostatic pulse flow through, diode progression was many more, and its conducting resistance is big more, is unfavorable for timely release.
Summary of the invention
The technical problem that the present invention solves provides a kind of composite power source circuit, and simple in structure being easy to connected up, and has stronger ESD electrostatic protection ability.
A kind of composite power source circuit provided by the invention comprises at least two independently-powered functional units, and described functional unit comprises power line and ground wire, it is characterized in that:
Be coupled with the bidirectional thyristor circuit between the power line of described any two functional units;
Be coupled with bidirectional thyristor circuit or bidirectional diode group back-to-back between the ground wire of described any two functional units;
Optionally, described bidirectional thyristor circuit comprises two unidirectional thyristors that specification is identical; The input of one of them unidirectional thyristor and the output of another unidirectional thyristor connect and compose first end of bidirectional thyristor circuit, and the input of its output and another unidirectional thyristor connects and composes second end of bidirectional thyristor circuit; Link when described first end and second end couple as the bidirectional thyristor circuit.
Optionally, in the described group of bidirectional diode back-to-back, the number of diodes of every path is equal and specification is identical.
As alternative dispensing means, described bidirectional thyristor circuit only comprises single bidirectional thyristor, the link when its link promptly couples as described bidirectional thyristor circuit.
The present invention also provides a kind of composite power source circuit, comprises at least two independently-powered functional units, and described functional unit comprises power line and ground wire, it is characterized in that, also comprises power bus and ground wire bus;
Be coupled with the bidirectional thyristor circuit between the power line of described each functional unit and the power bus;
Be coupled with the bidirectional thyristor circuit between the ground wire of described each functional unit and the ground wire bus;
Optionally, described bidirectional thyristor circuit comprises two unidirectional thyristors that specification is identical; The input of one of them unidirectional thyristor and the output of another unidirectional thyristor connect and compose first end of bidirectional thyristor circuit, and the input of its output and another unidirectional thyristor connects and composes second end of bidirectional thyristor circuit; Link when described first end and second end couple as the bidirectional thyristor circuit.
As another possibility, described bidirectional thyristor circuit only comprises single bidirectional thyristor, the link when its link promptly couples as described bidirectional thyristor circuit.
The present invention also provides a kind of bidirectional thyristor, it is characterized in that, comprising:
The P type semiconductor substrate;
Be formed at a N trap, P trap and the 2nd N trap in the Semiconductor substrate; Described P trap is adjacent with a N trap and the 2nd N trap respectively;
Be formed in the N trap and the N+ type injection region, the P+ type injection region that isolate mutually, be formed in the 2nd N trap and the 2nd N+ type injection region, the 2nd P+ type injection region that isolate mutually;
A described N+ type injection region is connected anode with a P+ type injection region, and the 2nd N+ type injection region is connected negative electrode with the 2nd P+ type injection region;
Be formed in the P trap and the N+ type bonding pad, the 2nd N+ type bonding pad that isolate mutually, a described N+ type bonding pad is adjacent with a N trap, and the 2nd N+ type bonding pad is adjacent with the 2nd N trap.
Described Semiconductor substrate ground connection
Comprise that also the P type that is formed in the Semiconductor substrate connects trap, be formed with the 3rd P+ type injection region in the described P type connection trap.With the 3rd P+ type injection region ground connection.
Be formed with between a described N+ type bonding pad and the 2nd N+ type bonding pad shallow trench isolation from.
In a described N+ type bonding pad, the 2nd N+ type bonding pad near shallow trench isolation from HALO injection region that a side all is formed with the LDD light doping section and is positioned at the LDD light doping section outside.The doping type of described LDD light doping section is a N type light dope.The doping type of described HALO injection region is a P type light dope.
Compared with prior art, the present invention mainly has the following advantages:
The present invention is by in the composite power source circuit; arbitrarily between the power line or couple the bidirectional thyristor circuit between the ground wire; utilize the high impedance of thyristor when closing and the low impedance characteristic during triggering and conducting, realize when power unit produces the ESD electrostatic breakdown protection functional circuit.Compared to multistage bipolar tube, adopt thyristor significantly to reduce and take area of chip, reduce conducting resistance, have good stable and to the response performance of ESD electrostatic pulse.
Further; the present invention is by being provided with power bus and ground wire bus; and between the power line and power bus of each functional unit, couple the bidirectional thyristor circuit between ground wire and the ground wire bus; can reduce the required thyristor number that couples on the whole; keep good ESD electrostatic protection ability simultaneously; further reduce the esd protection circuit part chip area taken and the wiring difficulty of chip the facilitating chip structure.
Description of drawings
By the more specifically explanation of the preferred embodiments of the present invention shown in the accompanying drawing, above-mentioned and other purpose, feature and advantage of the present invention will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Painstakingly do not draw accompanying drawing, focus on illustrating purport of the present invention by actual size equal proportion convergent-divergent.
Fig. 1 is the circuit diagram of existing a kind of composite power source circuit;
Fig. 2 is the circuit diagram of existing another kind of composite power source circuit;
Fig. 3 is the composite power source circuit diagram of first embodiment of the invention;
Fig. 4 is the composite power source circuit diagram of second embodiment of the invention;
Fig. 5 is the composite power source circuit diagram of third embodiment of the invention;
Fig. 6 is the composite power source circuit diagram of fourth embodiment of the invention;
Fig. 7 is a bidirectional thyristor circuit diagram of the present invention;
Fig. 8 is the semiconductor structure schematic diagram of bidirectional thyristor of the present invention;
Fig. 9 is the structure enlarged drawing in zone shown in the A among Fig. 8;
Figure 10 is that bidirectional thyristor first end second shown in Figure 8 is rectified the equivalent circuit diagram when biasing;
Figure 11 is the back-biased equivalent circuit diagram of bidirectional thyristor first end, second end shown in Figure 8.
Embodiment
By background technology as can be known; the ESD electrostatic breakdown when taking place in existing composite power source circuit in power circuit; can immediately the ESD electrostatic pulse be derived; adopt the mode of multistage diode series connection; to couple between each bar power line or the ground wire; utilize the fixed pressure drop characteristic of diode; do not interfere with each other between each bar power line or the ground wire when making operate as normal; and after the ESD electrostatic breakdown takes place; power line or ground wire that can each functional unit of conducting; discharge the ESD electrostatic pulse rapidly, and realize the purpose of ESD electrostatic protection.
But because the pressure drop of diode is limited in one's ability, the said method scope of application is less, in order to improve ESD electrostatic protection ability, needs to increase the area occupied of diode or the progression of diode sometimes, is unfavorable for the integrated and wiring of micro of chip.The delay that exists of diode self in addition will be exaggerated through behind the plural serial stage, make above-mentioned ESD electrostatic protection have the slower problem of response, if can not instant-free ESD electrostatic pulse, aggravate the influence of ESD electrostatic breakdown to functional circuit on the contrary.
The present inventor is through a large amount of experiments, obtained a kind of power supply compound circuit with strong esd protection ability, use thyristor to replace multistage diode, utilize high impedance and Low ESR during triggering and conducting and the response comparatively sensitive characteristic of thyristor when closing, realize above-mentioned ESD electrostatic protection better; The while thyristor need not to adopt multilevel hierarchy to reduce chip area is taken, and is convenient to the integrated and wiring of micro of device.
Below in conjunction with the problem of existing composite power source circuit existence, and the advantage of composite power source circuit of the present invention, technical scheme of the present invention is described in detail.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.A lot of details have been set forth in the following description so that fully understand the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention is not subjected to the restriction of following public concrete enforcement.
First embodiment
Fig. 3 is the composite power source circuit diagram of first embodiment of the invention.Below in conjunction with Fig. 3 the composite power source circuit of first embodiment of the invention is described, for the purpose of simplifying the description, above-mentioned composite power source circuit only comprises two independently-powered functional units, the i.e. first functional unit I and the second functional unit II, and the basic cell structure of two functional units is identical except that power pack.Wherein comprise the first power line VDD1, the first ground wire GND1 among the first functional unit I; Be coupled to power supply clamp circuit 10 and functional circuit 20 between the first power line VDD1, the first ground wire GND1.The input and output weld pad of described functional circuit 20 (I/O PAD) is coupled with the esd protection unit 21 of the static on can the release function circuit.The difference of the second functional unit II and the first functional unit II only is power pack, comprises second source line VDD2, the second ground wire GND2.
Be coupled with bidirectional thyristor circuit 40 between described first power line VDD1 and the second source line VDD2, be coupled with bidirectional diode group 30 back-to-back between the described first ground wire GND1 and the second ground wire GND2.
Described bidirectional thyristor circuit 40 has bidirectional triggered ability, promptly be coupled under the first power line VDD1 and the second source line VDD2 situation, two link electrical potential differences are during less than trigger voltage, bidirectional thyristor circuit 40 closures, and the first power line VDD1 and second source line VDD2 are isolated; And when the electrical potential difference of two links during greater than trigger voltage, bidirectional thyristor circuit 40 triggering and conducting, it is minimum that conduction impedance is reduced to rapidly, and the first power line VDD1 can be considered directly with second source line VDD2 and is connected.Usually for simplified structure, make that the trigger voltage of described bidirectional thyristor circuit 40 under different directions is identical.
In addition under normal conditions; in the composite power source circuit ground wire of each functional unit when manufacturing all based on same Semiconductor substrate; so in the present embodiment; electromotive force position when the first ground wire GND1 is most of with the second ground wire GND2 equates; requirement to the ESD electrostatic protection is lower, adopts the less group of bidirectional diode back-to-back 30 of progression to couple just and can satisfy the demands.For simplified structure, in the described group of bidirectional diode back-to-back 30, the number of diodes of every path is equal and specification is identical equally, and the minimum voltage of two paths when making conducting is identical.
Be example with operate as normal and ESD test case respectively below, the operation principle of present embodiment composite power source circuit is described.
When composite power source circuit operate as normal, the operating voltage of supposing the first power line VDD1 is V1, the operating voltage of second source line VDD2 is V2, and V1＞V2, and then to be applied to the electrical potential difference on the described bidirectional thyristor circuit 40 be V1-V2 for the first power line VDD1 and second source line VDD2.The triggering and conducting voltage of described bidirectional thyristor circuit 40 is V
Th, when choosing bidirectional thyristor circuit 40, make described triggering and conducting voltage V
ThGreater than V1-V2, then when operate as normal, the first power line VDD1 and second source line VDD2 completely cut off not conducting.The V that it may be noted that in addition
ThThe electrical potential difference that should produce between two power lines when flowing through the ESD electrostatic pulse is so that electrostatic protection, V usually
ThMore little, it is more little that bidirectional thyristor circuit 40 also can be done, and specifically selects as required.If the first ground wire GND1 and the second ground wire GND2 are based on the equal ground connection of semi-conductive substrate in addition, both current potentials can be consistent substantially, even will be communicated with the operate as normal that also can not influence the composite power source circuit between the two.
When carrying out the ESD test, suppose that the weld pad (VDD1 PAD) that is connected with the first power line VDD1 upward adds the ESD electrostatic pulse of forward by test probe in the first functional unit I, and the probe of ground connection is set on the weld pad that is connected with second source line VDD2 in the second functional unit II (VDD2 PAD).Above-mentioned ESD electrostatic pulse will be raised the current potential of the first power line VDD1, the electrical potential difference of winning between power line VDD1 and the second source line VDD2 be raise, until the conducting trigger voltage greater than bidirectional thyristor circuit 40 rapidly.Described bidirectional thyristor circuit 40 will be opened, conduction impedance falls to the utmost point low-level, can be considered the first power line VDD1 directly is communicated with second source line VDD2, described ESD electrostatic pulse will flow to second source line VDD2 via bidirectional thyristor circuit 40, and final weld pad (VDD2 PAD) from second source VDD2 is derived.After described ESD electrostatic pulse discharges; the current potential of the first power line VDD1 will return back to normal working voltage V1; electrical potential difference between the first power line VDD1 and the second source line VDD2 also returns back to V1-V2, and described bidirectional thyristor circuit 40 is closed, and finishes the ESD electrostatic protection.The derivation path of above-mentioned ESD electrostatic pulse is a shortest path, the also possible part of described ESD electrostatic pulse is via the power supply clamp circuit 10 of the first functional unit I, by the first ground wire GND1, the power supply clamp circuit 10 of bidirectional diode group 30, the second ground wire GND2, the second functional unit II back-to-back, the weld pad (VDD2PAD) from second source VDD2 is derived successively.Because the randomness that the ESD electrostatic breakdown produces on the power circuit via power line or ground wire discharge electrostatic charges, all is possible, follow the principle of selecting the impedance minimal path substantially, present embodiment is that example is with explanation effect of the present invention with a kind of situation wherein only.
Second embodiment
Fig. 4 is the composite power source circuit diagram of first embodiment of the invention.In first embodiment, the ground wire of the first functional unit I and the second functional unit II is considered as based on semi-conductive substrate ground connection, and current potential is consistent substantially.And in a lot of comparatively complicated composite power source circuit, two ground wires of power supply all may be in different potentials.Promptly as shown in Figure 4, the described first ground wire GND1 and the second ground wire GND2 are in different reference potential positions separately based on different Semiconductor substrate, have big electrical potential difference between the two.Then in order to satisfy further ESD electrostatic protection demand, present embodiment also is coupled with bidirectional thyristor circuit 40 between the first ground wire GND1 and the second ground wire GND2.For simplified structure, can all be coupled with bidirectional thyristor circuit 40 between the first ground wire GND1 and the second ground wire GND2 and between the first power line VDD1 and the second source line VDD2.
Present embodiment is when operate as normal; bidirectional thyristor circuit 40 keeps closing; completely cut off mutually between the first ground wire GND1 and the second ground wire GND2 and between the first power line VDD1 and the second source line VDD2; and after producing the ESD electrostatic pulse; described ESD electrostatic pulse selects the shortest release to derive the path nearby; and the corresponding bidirectional thyristor circuit 40 of triggering and conducting is realized the ESD electrostatic protection.The concrete operation principle and first embodiment are basic identical, repeat no more.
The 3rd embodiment
Fig. 5 is the composite power source circuit diagram of third embodiment of the invention.Usually SOC chip system (system on chip) comprises the several function unit, realize certain systemic-function with combination, operating voltage between each functional unit is not quite similar as required, therefore need power respectively to each functional unit, has constituted the composite power source circuit.The described composite power source circuit of present embodiment comprises functional unit independently-powered more than two, is signal with 4 functional unit I, II, III, IV only among Fig. 5.Each functional unit internal structure is omitted explanation, and corresponding power pack includes a power line VDD and a ground wire GND, and number consecutively is the first power line VDD1, second source line VDD2, the 3rd power line VDD3 and the 4th power line VDD4 among the figure; The first ground wire GND1, the second ground wire GND2, the 3rd ground wire GND3 and the 4th power line GND4.
Expand popularization according to the ESD electrostatic protection operation principle in the previous embodiment; in the present embodiment; the ESD electrostatic protection of each functional unit power unit only need can be realized coupling corresponding bidirectional thyristor circuit 40 between each power line and between each ground wire.In order to satisfy various randomness ESD electrostatic breakdown the time, discharge the demand of ESD electrostatic pulse, multiple discharge path is provided, need couple by bidirectional thyristor circuit 40 between the ground wire between any power line or arbitrarily.
The described composite power source circuit of present embodiment is when operate as normal; bidirectional thyristor circuit 40 keeps closing; completely cut off mutually between each bar power line and between each bar ground wire; and after producing the ESD electrostatic pulse; described ESD electrostatic pulse selects the shortest release to derive the path nearby; bidirectional thyristor circuit 40 on the triggering and conducting respective paths is realized the ESD electrostatic protection.Specifically operation principle is identical with previous embodiment also repeats no more.
The 4th embodiment
Fig. 6 is the composite power source circuit diagram of fourth embodiment of the invention.For large-scale SOC chip system, along with functional unit is complicated day by day, integrated element number is more and more, and power supply circuits also become increasingly complex.All coupling bidirectional thyristor between power line or the ground wire arbitrarily, number is numerous, is exponential growth, will expend a large amount of chip areas.Further, present embodiment provides another kind of composite power source circuit.Described composite power source circuit comprises functional unit independently-powered more than two, is signal with 4 functional unit I, II, III, IV only also among Fig. 6.Each functional unit internal structure is omitted explanation, and corresponding power pack includes a power line VDD and a ground wire GND, and number consecutively is the first power line VDD1, second source line VDD2, the 3rd power line VDD3 and the 4th power line VDD4 among the figure; The first ground wire GND1, the second ground wire GND2, the 3rd ground wire GND3 and the 4th power line GND4.In addition, the described composite power source circuit of present embodiment also comprises a power bus VDD_share and a ground wire bus GND_share.
Be coupled with bidirectional thyristor circuit 40 between described each bar power line and the power bus VDD_share; Also be coupled with bidirectional thyristor circuit 40 between each bar ground wire and the ground wire bus GND_share.
In the present embodiment, all be connected between the power line of any two functional units by two bidirectional thyristor circuit 40 and power bus VDD_share; And also be connected by two bidirectional thyristor circuit 40 and ground wire bus GND_share between the ground wire of any two functional units.Along with the quantity of functional unit increases; in the described composite power source circuit of present embodiment; the number of bidirectional thyristor circuit 40 is at most the twice of functional unit number; but the release guiding path of ESD electrostatic pulse does not reduce; when can guarantee ESD electrostatic protection demand; further simplify the structure of circuit, and it is integrated to be easier to connect up.
The described composite power source circuit of present embodiment is when operate as normal, and bidirectional thyristor circuit 40 all keeps closing, and completely cuts off mutually between each bar power line and between each bar ground wire, and power bus VDD_share and ground wire bus GND_share can be in the state of suspending.And after producing the ESD electrostatic pulse; described ESD electrostatic pulse is selected shortest path nearby; trigger corresponding bidirectional thyristor circuit 40; flow to power bus VDD_share or ground wire bus GND_share earlier; and then the bidirectional thyristor circuit 40 on the triggering respective paths; flow to other power lines or ground wire, thereby conducting discharges, and realizes the ESD electrostatic protection.Concrete operation principle repeats no more.
Above composite power source circuit is all based on the bidirectional triggered ability of bidirectional thyristor circuit.As shown in Figure 7, the embodiment of the invention provides a kind of bidirectional thyristor circuit.
Described bidirectional thyristor circuit comprises two unidirectional thyristors, i.e. first unidirectional thyristor 41 and second unidirectional thyristor 42.According to aforementioned content, in order to keep bidirectional triggered voltage unanimity, the specification of described first unidirectional thyristor 41 and second unidirectional thyristor 42 can be identical usually; Wherein the output of the input of first unidirectional thyristor 41 and second unidirectional thyristor 42 connects and composes first end 1 of bidirectional thyristor circuit, and the input of its output and second unidirectional thyristor 42 connects and composes second end 2 of bidirectional thyristor circuit; Link when described first end 1 and second end 2 couple as the bidirectional thyristor circuit.
The operation principle of the described bidirectional thyristor circuit of present embodiment is as follows:
According to known content, unidirectional thyristor is equivalent to the PNPN knot, and wherein an end of P type injection region is an input, and an end of N type injection region is an output.The triggering and conducting voltage of supposing above-mentioned first unidirectional thyristor 41 and second unidirectional thyristor 42 is V
ThIn above-mentioned bidirectional thyristor circuit, when the electrical potential difference of first end 1 and second end 2 less than V
ThThe time, described bidirectional thyristor circuit is in closed condition, and first end 1 and second end 2 are isolated mutually.And work as the electromotive force of the electromotive force of first end 1 greater than second end 2, and electrical potential difference is greater than V
ThThe time, then first unidirectional thyristor 41 is with triggering and conducting, and 42 of second unidirectional thyristors are in the reversal connection state, produce the electric current that flows to second end 2 from first end 1, and impedance are extremely low.Otherwise work as the electromotive force of the electromotive force of first end 1, and electrical potential difference is greater than V less than second end 2
ThThe time, then first unidirectional thyristor 41 is in the reversal connection state, and 42 triggering and conducting of second unidirectional thyristor produce the electric current that flows to first end 1 from second end 2, and impedance is equally extremely low.
Above-mentioned bidirectional thyristor circuit has comprised two independent unidirectional thyristor devices, further, and as shown in Figure 8, the embodiment of the invention also provides a kind of bidirectional thyristor circuit, only comprise a bidirectional thyristor, can further reduce size of devices, save chip area.
Described bidirectional thyristor comprises:
P type semiconductor substrate 400; Be formed at a N trap 401, P trap 403 and the 2nd N trap 402 in the Semiconductor substrate; Described P trap 403 is adjacent with a N trap 401 and the 2nd N trap 402 respectively;
In the present embodiment, a N trap 401 and the 2nd N trap 402 are symmetrical arranged about P trap 403, make a P trap 403 and a N trap 401 and the 2nd N trap 402 constitute the PN junction interface respectively.
Be formed in the N trap 401 and the N+ type injection region 501, the P+ type injection region 502 that isolate mutually, be formed in the 2nd N trap 402 and the 2nd N+ type injection region 601, the 2nd P+ type injection region 602 that isolate mutually; The one N+ type injection region 501 is connected first end, 1, the two N+ type injection region 601 and is connected second end 2 with the 2nd P+ type injection region 602 with a P+ type injection region 502; Described first end 1 and second end 2 are the link of bidirectional thyristor when coupling.
In the present embodiment, a N+ type injection region 501, a P+ type injection region 502 are formed at the surf zone of a N trap 401, and be isolated from 700 by shallow trench isolation between the two; The 2nd N+ type injection region 601, the 2nd P+ type injection region 602 are formed at the surf zone of the 2nd N trap 402, and be also isolated from 700 by shallow trench isolation between the two.Wherein the particular location of each injection region relation in same well region there is no particular requirement.Diagram only is optional a kind of arrangement mode, for example among Fig. 7, the position relation of the one a N+ type injection region 501 and a P+ type injection region 502 promptly can be changed, and can't influence the working mechanism of whole thyristor, same the 2nd N+ type injection region 601 and the 2nd P+ type injection region 602 also can reversing of position.
Bidirectional thyristor provided by the invention also comprises and is formed in the P trap and the N+ type bonding pad 301, the 2nd N+ type bonding pad 302 that isolate mutually, a described N+ type bonding pad 301 is adjacent with a N trap 401, and the 2nd N+ type bonding pad 302 is adjacent with the 2nd N trap 402.
In the present embodiment, described bidirectional thyristor comprises that also the P type that is formed in the Semiconductor substrate 400 connects trap 404, and the surf zone that described P type connects trap 404 is formed with the 3rd P+ type injection region 701, and the 3rd P+ type injection region 701 ground connection are got final product.
Also be formed with shallow trench isolation from 700 between a described N+ type bonding pad 301 and the 2nd N+ type bonding pad 302.The one N+ type bonding pad 301 and the 2nd N+ type bonding pad 302 near shallow trench isolation from HALO injection region 305 (as the indicated zone of Fig. 8 A, Fig. 9 is this regional enlarged diagram) that a side of 700 all is formed with LDD light doping section 304 and is arranged in the LDD light doping section outside.The doping type of described LDD light doping section 304 is a N type light dope, and the doping type of HALO injection region 305 is a P type light dope.
Bidirectional thyristor provided by the invention, first end 1 and second end 2 are under the bias voltage of different directions, and the equivalent electric circuit during work is also inequality, below in conjunction with the structure of above-mentioned bidirectional thyristor, the working mechanism under its different bias voltages is described further.Be stationary substrate electromotive force position, can be with described Semiconductor substrate 400 ground connection.
1, suppose that first end 1 connects high potential, second end 2 connects low potential, and the electrical potential difference between first end and the substrate is applied to the trigger voltage that exceeds thyristor gradually.
As shown in Figure 8, when adjacent, can be considered electrical connection with the zone of doping type.So when thyristor not during conducting, the electrical potential difference on first end 1 and the substrate will be transferred between a N+ type bonding pad 301 and the P trap 403.Further as shown in Figure 9, constituted PN junction between N-type LDD light doping section 304 on the N+ type bonding pad 301 and P-type HALO injection region 305, P-type HALO injection region 305 is equivalent to be electrically connected with P trap 403.With respect to other PN junction interface, the PN junction that N-type LDD light doping section 304 and P-type HALO injection region 305 are constituted, because implantation concentration is minimum, potential barrier is also minimum, be easy to most be reversed puncture, therefore for thyristor of the present invention, trigger voltage is the reverse breakdown voltage of the PN junction that constituted of N-type LDD light doping section 304 and P-type HALO injection region 305.
In thyristor of the present invention, because the PN junction that N-type LDD light doping section 304 and P-type HALO injection region 305 are constituted is as triggering PN junction, therefore do not wish to produce leakage current between a N+ type bonding pad 301 and the 2nd N+ type bonding pad 302, so need isolate a N+ type bonding pad 301 and the 2nd N+ type bonding pad 302 from 700 by shallow trench isolation.
Figure 10 is a bidirectional thyristor of the present invention, the equivalent circuit diagram when first end 1 and second end, 2 forward bias.In conjunction with Fig. 8 and shown in Figure 10, the internal resistance that defines a N trap 401 is R
1, the internal resistance of the 2nd N trap 402 is R
2, the internal resistance of Semiconductor substrate 100 is R
Sub, and the internal resistance of each injection region is ignored.After the thyristor conducting, the one N trap 401, P trap 403 and the 2nd N+ type bonding pad 302 constitute NPN triode T2, wherein the PN interface of P trap 403 and the 2nd N+ type bonding pad 302 formations is an emitter, is connected to second end 2 via the 2nd N trap 402, the 2nd N+ type injection region 601; The one P+ type injection region 502, a N trap 401 and P trap 403 constitute PNP triode T1, and wherein the PN interface of a P+ type injection region 502 and a N trap 401 formations is an emitter, and is connected to first end 1.Wherein, the P trap is both as the base stage of NPN triode T1, simultaneously also as the collector electrode of PNP triode T2, and via P type substrate 100, P type connection trap 404, the 3rd P+ type injection region 701 ground connection, and a N trap 401 is promptly as the collector electrode of NPN triode T1, be connected to first end 1 simultaneously also as the base stage of PNP triode T2, and via a N+ type injection region 501.
Figure 10 for another example, above-mentioned concrete equivalent electric circuit is as follows: the emitter of NPN type triode T2 is via the internal resistance R of the 2nd N trap 402
2 Second end 2 that connects thyristor, base stage connects the collector electrode of positive-negative-positive triode T1, and collector electrode is via the internal resistance R of a N trap 401
1 First end 1 that connects thyristor; The base stage of positive-negative-positive triode T1 connects the collector electrode of NPN type triode T2 simultaneously, and emitter connects first end 1 of thyristor, and collector electrode is via the internal resistance R of substrate
SubConnect ground.
According to above-mentioned equivalent electric circuit, NPN type triode T2 is connected with positive-negative-positive triode T1's, has constituted typical thyristor structure, and is similar with existing thyristor, its working mechanism no longer is described in detail in detail, and bidirectional thyristor of the present invention can normally when first end 1 and second end, 2 forward bias.
2, suppose that first end 1 connects low potential, second end 2 connects high potential, reverse bias, and second end 2 is applied to the trigger voltage that exceeds thyristor gradually with substrate electrical potential difference between the two.
Again as shown in Figure 8, when thyristor not during conducting, the electrical potential difference on second end 2 and the substrate will be transferred between the 2nd N+ type bonding pad 302 and the P trap 403.Further as shown in Figure 5, also constituted PN junction between N-type LDD light doping section 304 on the 2nd N+ type bonding pad 302 and P-type HALO injection region 305, P-type HALO injection region 305 is equivalent to be electrically connected with P trap 403.With respect to other PN interface, the PN junction that N-type LDD light doping section 304 and P-type HALO injection region 305 are constituted, because implantation concentration is minimum, potential barrier is also minimum, be easy to most be reversed puncture, therefore for thyristor of the present invention, the trigger voltage during reverse bias still is the reverse breakdown voltage of the PN junction that constituted of N-type LDD light doping section 304 and P-type HALO injection region 305.
Figure 11 is a bidirectional thyristor of the present invention, the equivalent circuit diagram when first end 1 and second end, 2 reverse bias.In conjunction with Fig. 8 and shown in Figure 11, the internal resistance that defines a N trap 401 equally is R
1, the internal resistance of the 2nd N trap 402 is R
2, the internal resistance of Semiconductor substrate 100 is R
Sub, and the internal resistance of each injection region is ignored.After the thyristor conducting, the 2nd N trap 402, P trap 403 and a N+ type bonding pad 301 constitute NPN triode T4, wherein the PN interface of P trap 403 and a N+ type bonding pad 301 formations is an emitter, is connected to first end 1 via a N trap 401, a N+ type injection region 501; The 2nd P+ type injection region 602, the 2nd N trap 402 and P trap 403 constitute PNP triode T3, and wherein the PN interface of the 2nd P+ type injection region 602 and the 2nd N trap 402 formations is an emitter, and is connected to second end 2.Wherein, the P trap is both as the base stage of NPN triode T4, simultaneously also as the collector electrode of PNP triode T3, and via P type substrate 100, P type connection trap 404, the 3rd P+ type injection region 701 ground connection, and the 2nd N trap 402 is promptly as the collector electrode of NPN triode T4, be connected to second end 2 simultaneously also as the base stage of PNP triode T3, and via the 2nd N+ type injection region 601.
Figure 11 for another example, above-mentioned concrete equivalent electric circuit is as follows: the emitter of NPN type triode T4 is via the internal resistance R of a N trap 401
1 First end 1 that connects thyristor, base stage connects the collector electrode of positive-negative-positive triode T3, and collector electrode is via the internal resistance R of the 2nd N trap 402
2 Second end 2 that connects thyristor; The base stage of positive-negative-positive triode T3 connects the collector electrode of NPN type triode T4 simultaneously, and emitter connects second end 2 of thyristor, and collector electrode is via the internal resistance R of substrate
SubConnect ground.
According to above-mentioned equivalent electric circuit, NPN type triode T4 is connected with positive-negative-positive triode T3's, has also constituted typical thyristor structure, and bidirectional thyristor of the present invention still can normally when first end 1 and second end, 2 reverse bias.
Two kinds of bias voltage directions to sum up, bidirectional thyristor equivalent electric circuit of the present invention is also inequality, but all can constitute typical thyristor circuit, thereby realizes bidirectional triggered; Further, when the small size PN junction that constituted of the HALO injection region by LDD light doping section on a N+ type bonding pad 301 and the 2nd N+ type bonding pad 302 and its outside is as forward bias or reverse bias respectively, the triggering PN junction of thyristor can reduce thyristor conducting trigger voltage.
Above-mentioned bidirectional thyristor is applied in the described composite power source circuit of first embodiment to the, four embodiment, can realizes the ESD electrostatic protection.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction.Any those of ordinary skill in the art, do not breaking away under the technical solution of the present invention scope situation, all can utilize the method and the technology contents of above-mentioned announcement that technical solution of the present invention is made many possible changes and modification, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention, all still belongs in the scope of technical solution of the present invention protection any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (15)
1. a composite power source circuit comprises at least two independently-powered functional units, and described functional unit comprises power line and ground wire, it is characterized in that:
Be coupled with the bidirectional thyristor circuit between the power line of described any two functional units;
Be coupled with bidirectional thyristor circuit or bidirectional diode group back-to-back between the ground wire of described any two functional units;
2. composite power source circuit according to claim 1 is characterized in that, described bidirectional thyristor circuit comprises two unidirectional thyristors that specification is identical; The input of one of them unidirectional thyristor and the output of another unidirectional thyristor connect and compose first end of bidirectional thyristor circuit, and the input of its output and another unidirectional thyristor connects and composes second end of bidirectional thyristor circuit; Link when described first end and second end couple as the bidirectional thyristor circuit.
3. composite power source circuit according to claim 1 is characterized in that, in the described group of bidirectional diode back-to-back, the number of diodes of every path is equal and specification is identical.
4. composite power source circuit according to claim 1 is characterized in that, described bidirectional thyristor circuit only comprises single bidirectional thyristor, the link when its link promptly couples as described bidirectional thyristor circuit.
5. a composite power source circuit comprises at least two independently-powered functional units, and described functional unit comprises power line and ground wire, it is characterized in that, also comprises power bus and ground wire bus;
Be coupled with the bidirectional thyristor circuit between the power line of described each functional unit and the power bus;
Be coupled with the bidirectional thyristor circuit between the ground wire of described each functional unit and the ground wire bus;
6. composite power source circuit according to claim 5 is characterized in that, described bidirectional thyristor circuit comprises two unidirectional thyristors that specification is identical; The input of one of them unidirectional thyristor and the output of another unidirectional thyristor connect and compose first end of bidirectional thyristor circuit, and the input of its output and another unidirectional thyristor connects and composes second end of bidirectional thyristor circuit; Link when described first end and second end couple as the bidirectional thyristor circuit.
7. composite power source circuit according to claim 5 is characterized in that, described bidirectional thyristor circuit only comprises single bidirectional thyristor, the link when its link promptly couples as described bidirectional thyristor circuit.
8. a bidirectional thyristor is characterized in that, comprising:
The P type semiconductor substrate;
Be formed at a N trap, P trap and the 2nd N trap in the Semiconductor substrate; Described P trap is adjacent with a N trap and the 2nd N trap respectively;
Be formed in the N trap and the N+ type injection region, the P+ type injection region that isolate mutually, be formed in the 2nd N trap and the 2nd N+ type injection region, the 2nd P+ type injection region that isolate mutually;
A described N+ type injection region is connected anode with a P+ type injection region, and the 2nd N+ type injection region is connected negative electrode with the 2nd P+ type injection region;
Be formed in the P trap and the N+ type bonding pad, the 2nd N+ type bonding pad that isolate mutually, a described N+ type bonding pad is adjacent with a N trap, and the 2nd N+ type bonding pad is adjacent with the 2nd N trap.
9. bidirectional thyristor as claimed in claim 8 is characterized in that, described Semiconductor substrate ground connection.
10. bidirectional thyristor as claimed in claim 8 is characterized in that, comprises that also the P type that is formed in the Semiconductor substrate connects trap, is formed with the 3rd P+ type injection region in the described P type connection trap.
11. bidirectional thyristor as claimed in claim 10 is characterized in that, with the 3rd P+ type injection region ground connection.
12. bidirectional thyristor as claimed in claim 8 is characterized in that, be formed with between a described N+ type bonding pad and the 2nd N+ type bonding pad shallow trench isolation from.
13. bidirectional thyristor as claimed in claim 12 is characterized in that, in a described N+ type bonding pad, the 2nd N+ type bonding pad near shallow trench isolation from HALO injection region that a side all is formed with the LDD light doping section and is positioned at the LDD light doping section outside.
14. bidirectional thyristor as claimed in claim 13 is characterized in that, the doping type of described LDD light doping section is a N type light dope.
15. bidirectional thyristor as claimed in claim 14 is characterized in that, the doping type of described HALO injection region is a P type light dope.
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| CN201010143961XA CN102208407A (en) | 2010-03-31 | 2010-03-31 | Composite power circuit and bidirectional thyristor |
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