CN101004559B - Method for enhancing adhesion force of graphics in photoetching procedure - Google Patents
Method for enhancing adhesion force of graphics in photoetching procedure Download PDFInfo
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- CN101004559B CN101004559B CN2006101477155A CN200610147715A CN101004559B CN 101004559 B CN101004559 B CN 101004559B CN 2006101477155 A CN2006101477155 A CN 2006101477155A CN 200610147715 A CN200610147715 A CN 200610147715A CN 101004559 B CN101004559 B CN 101004559B
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- gas
- plasma
- photoetching process
- adhesive force
- inert gas
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- 238000000034 method Methods 0.000 title claims abstract description 33
- 238000001259 photo etching Methods 0.000 title claims abstract description 17
- 230000002708 enhancing effect Effects 0.000 title claims description 9
- 239000000463 material Substances 0.000 claims abstract description 29
- 230000008569 process Effects 0.000 claims abstract description 19
- 238000011282 treatment Methods 0.000 claims abstract description 5
- 238000001312 dry etching Methods 0.000 claims abstract description 4
- 239000007789 gas Substances 0.000 claims description 30
- 239000011261 inert gas Substances 0.000 claims description 20
- 239000010409 thin film Substances 0.000 claims description 17
- 239000000853 adhesive Substances 0.000 claims description 12
- 230000001070 adhesive effect Effects 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 8
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 8
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 8
- 238000012545 processing Methods 0.000 claims description 8
- 239000004744 fabric Substances 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 239000001307 helium Substances 0.000 claims description 5
- 229910052734 helium Inorganic materials 0.000 claims description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 5
- 229910052743 krypton Inorganic materials 0.000 claims description 5
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052754 neon Inorganic materials 0.000 claims description 5
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 5
- 229910052724 xenon Inorganic materials 0.000 claims description 5
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 5
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 claims description 4
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 4
- 235000019270 ammonium chloride Nutrition 0.000 claims description 4
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 claims description 4
- 239000001272 nitrous oxide Substances 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 2
- 239000002253 acid Substances 0.000 abstract description 9
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 8
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000006552 photochemical reaction Methods 0.000 abstract 1
- 230000006872 improvement Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 238000004381 surface treatment Methods 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 150000003254 radicals Chemical class 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 206010070834 Sensitisation Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000000306 recurrent effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
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Abstract
The invention discloses a method for binding pattern in reinforced photo-etching process, including carrying out several times of plasma alkaline treatments on bottom film before photo-etching process is done, forming cross-linked projection unit at bottom of photosensitive-material pattern, and then using dry-etching means to remove off said cross-linked projection unit of bottom film. The beneficial effect comprises: the light-acid reaction which near the substrate on the substrate and the photosensing material prevents the photochemical reaction at the bottom, so as to greatly enlarge the connection area of the pattern and the substrate material and solve the pattern falling down problem frequently generated when the pattern line width narrowed, the corresponding photosensing material also thinned in integrated circuit technology.
Description
Technical field
The invention belongs to the ic manufacturing technology field, be specifically related to a kind of method that strengthens figure adhesive force in the photoetching process.
Background technology
The semiconductor devices function of today has developed very powerfully, but the research staff still keeping on improving, and continues to consider the further area of reduction of device, improves the integrated level of circuit board.
As everyone knows, if the reduction of device area, the figure live width also must be dwindled, so the used photochromics of photoetching process is also wanted continuous attenuate naturally.But cross the realization that thin photoresist is unfavorable for etching technics, ion implantation technology masking layer, this contradiction exists exist all the time that day from semiconductor.The way that industry often adopts is the thickness that in the scope that resolution allows, thickens photochromics as far as possible; Usually the thickness of photochromics and the ratio of figure live width are about 3: 1; No doubt this way can address this problem; But especially often find the figure problem of collapsing in producing behind the developing process, the reduction that this is serious the qualification rate of semiconductor product.After the mechanism that analyzed pattern collapses, finding that this phenomenon is closely bound up with the surface tension of base material, be to solve through the adhesive force that uses surface thickening agent further enhancing figure and backing material at present, but this way can not be dealt with problems at all; And the thickness of another method-minimizing photochromics is infeasible.
Summary of the invention
The technical issues that need to address of the present invention are to provide a kind of method that strengthens figure adhesive force in the photoetching process, when dwindling the semiconductor devices area, can also guarantee developing process after the high-quality of figure.
Technical scheme of the present invention is:
It is characterized in that: before in ic manufacturing process, carrying out photoetching process; Several times of plasma alkaline is carried out on the bottom thin film surface to be handled; Thereby form crosslinked outshot in photochromics figure bottom; To strengthen the area that is connected of figure and backing material, remove said and crosslinked outshot bottom thin film by subsequently dry etching afterwards.
As to improvement of the present invention, before the bottom thin film surface being carried out the several times of plasma alkaline processing, also comprise step: the bottom thin film surfacing is cleaned;
As to improvement of the present invention, several times of plasma is carried out on the bottom thin film surface, at first carry out the inert, plasma surface treatment, utilize inert gas to surface preparation, the clean surface, the valence link that interrupts membraneous material connects;
Plasma alkaline is handled for the second time, feeds the mixed gas of inert gas and reacting gas, to improve the surface alkalinty radical concentration of membraneous material, strengthens the binding ability with acid ion;
The number of times that plasma alkaline is handled is decided by the surface alkalinty radical concentration; So as to improvement of the present invention; Usually after finishing twice plasma alkaline processing, also comprise step: measure the concentration of thin-film material surface basic group,, just carry out figure cloth, baking, litho pattern on the light sensitive material surface if concentration reaches requirement; Continue subsequent step then; If concentration does not reach setting value, then repeat plasma alkaline and handle,, the concentration of basic group carries out figure cloth, baking, litho pattern on the light sensitive material surface again after reaching the setting requirement; Wherein the 1st plasma surface treatment be for utilizing inert gas to surface preparation, and the 2nd time and each time plasma basic treatment of repeating thereafter all only feed the mixed gas of inert gas and reacting gas.
As to improvement of the present invention, before crosslinked outshot is formed on photochromics figure bottom, also comprise step: at light sensitive material exterior view cloth, baking, litho pattern, so that produce crosslinked outshot;
The present invention has utilized sensitization, the reaction mechanism of photochromics, i.e. photochemical catalysis reaction is after energy that initial spacing wave has is absorbed by photochromics; It is sour that PAG optical acid generating agent in the photochromics can produce different acid light strong and weak and molecular size; These light acid are distributed in photochromics by in the exposure area, and along with the baking of silicon chip is heated, they will obtain enough kinetic energy and carry out diffusion motion; And will amplify the reactant of reaction as the chemistry that forms image; The generation chain reaction, the fragrant type acidic materials of reaction product benzene react with the developer solution of alkalescence, finally obtain the mechanism of figure.The present invention proposes that substrate surface (being film surface) is carried out plasma alkaline and handles; Make its be easy to photochromics near the light acid reaction of substrate; And then the acid of neutralization light, stop photochemically reactive the carrying out in bottom, thereby form crosslinked outshot in photochromics figure bottom.
As to improvement of the present invention; Said plasma alkaline has been used plasma source in handling; Comprise auxiliary inert gas and reacting gas; Wherein auxiliary inert gas can use arbitrary gas in helium, neon, argon, krypton or the xenon, and reacting gas can use arbitrary gas in nitrogen monoxide, nitrogen dioxide, nitrous oxide, ammonia or the sal-ammoniac.
The gas volume blending ratio of the plasma source described in the present invention is an inert gas: reacting gas is arbitrary ratio in 1: 1,1: 2,1: 3,1: 4,1: 5,1: 6,2: 3,2: 5,2: 7,2: 9,3: 4,3: 5,3: 7,3: 8,4: 5,4: 7,4: 9,5: 6,5: 7,5: 8,5: 9,6: 7,7: 8,7: 9,8: 9.
Plasma alkaline technology described in the present invention is characterized in that, in described 2～5 plasma process were handled, each processing time was 50-500 second, and air pressure is the 5-50 holder, and power is 100-500 watt, and temperature is the 150-400 degree.
The invention has the beneficial effects as follows; Because substrate surface plasma alkaline Treatment Technology scheme; Near the light acid reaction of substrate, stoped photochemically reactive the carrying out in bottom, thereby greatly strengthened the be connected area of figure in substrate and the photochromics with backing material; Solved the figure live width and dwindled, corresponding photochromics is the continuous recurrent figure difficult problem of collapsing in the integrated circuit technology of attenuate also.
Description of drawings
Fig. 1 is common litho pattern cut-open view;
Fig. 2 is the litho pattern cut-open view that has photochromics and the crosslinked outshot of bottom thin film.
Label declaration:
1 photochromics; The outstanding crosslink part of 2 photochromicss and bottom thin film; 3 bottom thin film materials;
Embodiment
Below through accompanying drawing and specific embodiment the present invention is elaborated.
1) bottom thin film material 3 is cleaned;
2) carry out the plasma surface treatment first time, utilize inert gas surface preparation, the clean surface, the valence link that interrupts membraneous material connects, and is convenient to the subsequent reactions operation;
Used inert gas is helium, neon, argon, krypton or xenon; The time of plasma surface treatment is 50 seconds; Air pressure is set at 5 holders, 10 holders, 30 holders or 50 holders respectively; Power is chosen as 100 watts, 150 watts or 300 watts respectively; Temperature is chosen as 150 degree, 250 degree or 300 degree respectively;
3) plasma alkaline is handled for the second time, feeds the mixed gas of inert gas and reacting gas, improves the surface alkalinty radical concentration of membraneous material, strengthens the binding ability with acid ion;
Used inert gas is helium, neon, argon, krypton or xenon; Used reacting gas is nitrogen monoxide, nitrogen dioxide, nitrous oxide, ammonia or sal-ammoniac; The volume mixture ratio of gas is an inert gas: reacting gas is a group in the middle of 1: 1,1: 2,1: 3,1: 4,1: 5,1: 6,2: 3,2: 5,2: 7,2: 9,3: 4,3: 5,3: 7,3: 8,4: 5,4: 7,4: 9,5: 6,5: 7,5: 8,5: 9,6: 7,7: 8,7: 9,8: 9; Processing time is 200 seconds; Air pressure is set at 30 holders or 50 holders; Power is 100 watts, 150 watts or 300 watts; Temperature is 200 degree, 250 degree or 300 degree;
4) concentration of mensuration thin-film material surface basic group when concentration reaches setting value, carries out the 6th) step, otherwise carry out next step;
5) continue plasma alkaline and handle, feed the mixed gas of inert gas and reacting gas, reach setting value until the concentration of basic group, present embodiment concentration value scope is 5-20%wt (%wt this area mass percent standard);
6) carry out exterior view cloth, baking, the litho pattern technology of light sensitive material 1, produce crosslinked outshot 2 thus;
7) the crosslinked outshot 2 of dry etching photochromics 1 and film 3 bottoms, complete operation.
Though disclose the preferred embodiments of the present invention, those skilled in the art will appreciate that any various modifications, interpolation and replacement all belong to protection scope of the present invention under the situation of open scope in not deviating from claims of the present invention.
Claims (8)
1. a method that strengthens figure adhesive force in the photoetching process is characterized in that: in ic manufacturing process, before the photoetching process, bottom thin film material (3) is carried out several times of plasma alkaline continuously handle; Thereby form crosslinked outshot (2) in photochromics (1) figure bottom; Remove the crosslinked outshot that photochromics (1) figure bottom forms by dry etching at last.
2. the method for figure adhesive force in the enhancing photoetching process as claimed in claim 1; It is characterized in that: the described number of times that carries out the several times of plasma alkaline processing is decided by the concentration of thin-film material surface basic group; Usually after finishing twice plasma alkaline processing; Need to measure the concentration of thin-film material surface basic group, concentration reaches requirement, then carries out exterior view cloth, baking, the litho pattern technology of light sensitive material; Handle otherwise continue plasma alkaline, after the concentration of thin-film material surface basic group reaches the setting requirement, carry out exterior view cloth, baking, the litho pattern technology of light sensitive material again.
3. the method for figure adhesive force in the enhancing photoetching process as claimed in claim 2; It is characterized in that: described twice plasma alkaline handled; Wherein the 1st plasma basic treatment is for utilizing inert gas to surface preparation; The 2nd plasma basic treatment, the mixed gas of feeding inert gas and reacting gas; Described continuation plasma alkaline is handled also for feeding the mixed gas of inert gas and reacting gas.
4. the method for figure adhesive force in the enhancing photoetching process as claimed in claim 3; It is characterized in that: said inert gas is arbitrary gas in helium, neon, argon, krypton or the xenon, and reacting gas is arbitrary gas in nitrogen monoxide, nitrogen dioxide, nitrous oxide, ammonia or the sal-ammoniac.
5. the method for figure adhesive force in the enhancing photoetching process as claimed in claim 1 is characterized in that: before the bottom thin film material being carried out the several times of plasma alkaline processing, also can comprise the bottom thin film material is cleaned.
6. the method for figure adhesive force in the enhancing photoetching process as claimed in claim 1; It is characterized in that: said plasma alkaline is handled and has been used plasma source; Comprise auxiliary inert gas and reacting gas; Wherein auxiliary inert gas is arbitrary gas in helium, neon, argon, krypton or the xenon, and reacting gas is arbitrary gas in nitrogen monoxide, nitrogen dioxide, nitrous oxide, ammonia or the sal-ammoniac.
7. the method for figure adhesive force in the enhancing photoetching process as claimed in claim 6; It is characterized in that: described gas volume blending ratio, i.e. inert gas: the reacting gas ratio is arbitrary ratio in 1: 1,1: 2,1: 3,1: 4,1: 5,1: 6,2: 3,2: 5,2: 7,2: 9,3: 4,3: 5,3: 7,3: 8,4: 5,4: 7,4: 9,5: 6,5: 7,5: 8,5: 9,6: 7,7: 8,7: 9,8: 9.
8. the method for figure adhesive force in the enhancing photoetching process as claimed in claim 1 is characterized in that: said several times of plasma alkaline is handled, and its each processing time is 50-500 second, and air pressure is the 5-50 holder, and power is 100-500 watt, and temperature is the 150-400 degree.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2006101477155A CN101004559B (en) | 2006-12-21 | 2006-12-21 | Method for enhancing adhesion force of graphics in photoetching procedure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2006101477155A CN101004559B (en) | 2006-12-21 | 2006-12-21 | Method for enhancing adhesion force of graphics in photoetching procedure |
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| Publication Number | Publication Date |
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| CN101004559A CN101004559A (en) | 2007-07-25 |
| CN101004559B true CN101004559B (en) | 2012-01-11 |
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| CN2006101477155A Expired - Fee Related CN101004559B (en) | 2006-12-21 | 2006-12-21 | Method for enhancing adhesion force of graphics in photoetching procedure |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102314078B (en) * | 2010-07-08 | 2013-01-16 | 中芯国际集成电路制造(上海)有限公司 | Photoetching method |
| CN111115563A (en) * | 2019-12-23 | 2020-05-08 | 湖南大学 | Method for stripping functional material by full-dry method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4176003A (en) * | 1978-02-22 | 1979-11-27 | Ncr Corporation | Method for enhancing the adhesion of photoresist to polysilicon |
| US5807660A (en) * | 1997-02-03 | 1998-09-15 | Taiwan Semiconductor Manufacturing Company Ltd. | Avoid photoresist lifting by post-oxide-dep plasma treatment |
| US6096662A (en) * | 1997-03-26 | 2000-08-01 | Advanced Micro Devices, Inc. | NH3 /N2 plasma treatment to enhance the adhesion of silicon nitride to thermal oxide |
| US6143666A (en) * | 1998-03-30 | 2000-11-07 | Vanguard International Seminconductor Company | Plasma surface treatment method for forming patterned TEOS based silicon oxide layer with reliable via and interconnection formed therethrough |
| CN1459834A (en) * | 2002-05-22 | 2003-12-03 | 联华电子股份有限公司 | Method of enhancing adhesion strength between borosilicate glass film and silicon nitride film |
| US6767834B2 (en) * | 2000-11-24 | 2004-07-27 | Samsung Electronics Co., Ltd. | Method of manufacturing a contact of a semiconductor device using cluster apparatus having at least one plasma pretreatment module |
-
2006
- 2006-12-21 CN CN2006101477155A patent/CN101004559B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4176003A (en) * | 1978-02-22 | 1979-11-27 | Ncr Corporation | Method for enhancing the adhesion of photoresist to polysilicon |
| US5807660A (en) * | 1997-02-03 | 1998-09-15 | Taiwan Semiconductor Manufacturing Company Ltd. | Avoid photoresist lifting by post-oxide-dep plasma treatment |
| US6096662A (en) * | 1997-03-26 | 2000-08-01 | Advanced Micro Devices, Inc. | NH3 /N2 plasma treatment to enhance the adhesion of silicon nitride to thermal oxide |
| US6143666A (en) * | 1998-03-30 | 2000-11-07 | Vanguard International Seminconductor Company | Plasma surface treatment method for forming patterned TEOS based silicon oxide layer with reliable via and interconnection formed therethrough |
| US6767834B2 (en) * | 2000-11-24 | 2004-07-27 | Samsung Electronics Co., Ltd. | Method of manufacturing a contact of a semiconductor device using cluster apparatus having at least one plasma pretreatment module |
| CN1459834A (en) * | 2002-05-22 | 2003-12-03 | 联华电子股份有限公司 | Method of enhancing adhesion strength between borosilicate glass film and silicon nitride film |
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