CN100593888C - Single chip integrated semiconductor laser with tunable wavelength and without mode hopping - Google Patents
Single chip integrated semiconductor laser with tunable wavelength and without mode hopping Download PDFInfo
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- CN100593888C CN100593888C CN200810061811A CN200810061811A CN100593888C CN 100593888 C CN100593888 C CN 100593888C CN 200810061811 A CN200810061811 A CN 200810061811A CN 200810061811 A CN200810061811 A CN 200810061811A CN 100593888 C CN100593888 C CN 100593888C
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Abstract
The invention discloses a monolithic integrated mode-hop-free wavelength tunable semiconductor laser which comprises an optical cavity consisting of a waveguide end surface and a wavelength dispersivediffraction grating, an active waveguide arranged at one side of the optical cavity and providing gains and a wavelength dispersive diffraction grating arranged at the other side of the optical cavity and applied as a filter to select lasing wavelength; a planar waveguide area and a wavelength tuning area are arranged between the active waveguide and the wavelength dispersive diffraction gratingand the wavelength tuning area is clamped between a pair of electrodes. Effective refractive index of the wavelength tuning area is changed by an electric effect so as to adjust the wavelength of a grating filter as well as the length of the optical cavity, so that the adjustment of the laser mode wavelength is synchronous with that of wavelength of the grating filter, thus realizing mode-hop-freecontinuous tuning. The design structure can be used for multiband integrated tunable lasers and multi-wavelength tunable laser array.
Description
Technical field
The present invention relates to semiconductor laser, especially relate to a kind of single chip integrated semiconductor laser with tunable wavelength and without mode hopping.
Background technology
In a plurality of applications such as interferometry, spectroscopy, optical communications, all wish to obtain the wavelength and without mode hopping tunable laser source of a covering wide spectral region.Laser generally changes its output wavelength by the optical property of regulating resonant cavity, and the excitation mode of laser jumps to another wavelength suddenly by a wavelength sometimes when resonant cavity optical characteristics continuous tuning, Here it is said mode hopping.With the length scanning interferometry is example, and mode hopping is for the spatial resolution of range measurement, and the characteristic that position precision and other depend on the distance/degree of depth all can produce adverse influence.In order to realize that wavelength and without mode hopping regulates, the influence that is subjected to a wavelength selection element when wavelength is when tuning, and the optical path length that must make resonant cavity is also by adjusted in concert.With the outer cavity adjustable laser is example, when by the rotation diffraction grating wavelength being regulated, must make it produce space displacement simultaneously and comprise identical number of wavelengths to guarantee total chamber in long.
Compare with the outer cavity adjustable laser that is assembled by a plurality of discrete components, the single-slice integrated semiconductor tunable laser has more advantages.Its compact conformation, cost is low, and more reliable, because it is without any movable part.The integrated tunable laser of the monolithic of a routine generally includes a multiple electrode structure and realizes tuning without mode skip.Fig. 1 is the example of a prior art, and a semiconductor tunable laser is distributed by a Prague and reflects (DBR) grating (wavelength tuning element), an active gain district (generation laser), and a phase-shifted region (adjusting optical cavity length) is formed.Be used for the top that automatically controlled electrode is deposited to this three part.When DBR grating reflection peak wavelength is transfused to electric current or load voltage adjusting, in order to prevent to adjust phase-shifted region simultaneously with wavelength shift generation mode hopping.Therefore, tuning in order to realize wavelength and without mode hopping, just need two control circuits.Make the complexity of equipment and cost all increase to some extent to the synchronous requirement of two control units, and since the influence of factors such as laser service life or environmental condition to keep be unusual difficulty synchronously.
In a lot of applications, also need optical maser wavelength by tuning so that it can cover two or more wave bands, perhaps can make it launch the light wave of a plurality of wavelength simultaneously.
Summary of the invention
The object of the present invention is to provide a single-slice integrated semiconductor laser, it can just can realize that wavelength and without mode hopping is tuning by single electrode control.
The technical solution adopted for the present invention to solve the technical problems is:
Scheme one: a kind of single chip integrated semiconductor laser with tunable wavelength and without mode hopping comprises the optics cavity be made up of Waveguide end face and wavelength dispersion diffraction grating, place optics cavity one side provide gain an active waveguide, place the optics cavity opposite side to select the wavelength dispersion diffraction grating of emission optical maser wavelength as filter, be made up of waveguide zone and wavelength tuning district between active waveguide and the wavelength dispersion diffraction grating, the wavelength tuning district is sandwiched between the pair of electrodes.
Send and incide on the wavelength dispersion diffraction grating any two light paths of two diverse locations by active waveguide and will cross the wavelength tuning district along straight line separately, the shape and size in wavelength tuning district make any two straight lines in the wavelength tuning district optical path difference and the ratio of total optical path difference be a constant γ, this constant γ equates with the ratio of the round light path of light path by wavelength-modulated device district part with round total optical path in optics cavity.
Described wavelength dispersion diffraction grating is a balzed grating.
When the left side of wavelength tuning district in waveguide zone, an end in wavelength tuning district is the terminal O of waveguide, and the border of another side is curve M B, and curve M B is by formula Δ lp=γ Δ Lp decision, wherein Δ L
p=OP-OA, the O point is the end points of waveguide, A be on the grating curve from the nearest point of the end points O of waveguide point, M is any point on the OA line, P is any set point on the grating; Δ l
p=OQ-OM, OQ represent that along the OP direction by the distance of O point to wavelength tuning district boundary curve, OM represents along the OA direction by the distance of O point to wavelength tuning district boundary curve; γ is a constant, is the ratio of total optical path difference in optical path difference in the wavelength tuning district and the optics cavity, and simultaneously, each parameter need satisfy relational expression n
aL
a(l-OM)=n (OML-OAl).
When the right in waveguide zone, wavelength tuning district, an end in wavelength tuning district is the grating surface curve, and the border of another side is curve M B, and curve M B is by formula Δ lp=γ Δ Lp, wherein Δ L
p=OP-OA, the O point is the end points of waveguide, A be on the grating curve from the nearest point of the end points O of waveguide point, M is any point on the OA line, P is any set point on the grating; Δ l
p=PQ-AM, PQ represent that along the OP direction by the distance of P point to wavelength tuning district boundary curve, AM represents along the OA direction by the distance of A point to wavelength tuning district boundary curve; γ is a constant, is the ratio of total optical path difference in optical path difference in the wavelength tuning district and the optics cavity.Simultaneously, each parameter need satisfy relational expression n
aL
a(l-AM)=n (AML-OAl).
Scheme two: the active waveguide that a kind of single chip integrated semiconductor laser with tunable wavelength and without mode hopping comprises part reflecting face, combine with part reflecting face is as common waveguide, be combined to form one group high reflecting surface array of an optics cavity, combine with in one group of high reflecting surface any one and provide one group of active waveguide array of gain for the optics cavity at place separately by pumping the time with part reflecting face; The corresponding corresponding optical band of each active waveguide in one group of active waveguide array, an a branch of light that is used to receive by one group of active waveguide array emission outputs to light beam as in the active waveguide of common waveguide and select the wavelength dispersion diffraction grating of an excitation wavelength in a certain wave band as filter; Form by wavelength tuning district and waveguide zone between active waveguide and the wavelength dispersion diffraction grating; The wavelength tuning district is sandwiched between the pair of electrodes.
Thereby optical cavity length can be regulated automatically and reach no mode hopping output when the shape in wavelength tuning district was conditioned excitation wavelength; Send and incide on the wavelength dispersion diffraction grating any two light paths of two diverse locations by any one waveguide in one group of active waveguide array and will cross the wavelength tuning district along straight line separately, the shape and size in wavelength tuning district make these any two straight lines in the wavelength tuning district optical path difference and the ratio of total optical path difference be a constant, constant wherein and light path equate with the ratio that comes and goes total optical path in optics cavity by the round light path of wavelength tuning district part.
An active waveguide and one group of active waveguide array as common waveguide are set at ad-hoc location, so that the wavelength dispersion diffraction grating minimizes to diffraction efficiency in these locational backs, the wavelength diffraction efficiency in the resonant cavity of being made up of jointly an active waveguide and one group of active waveguide array institute as common waveguide is maximized.
Scheme three: a kind of single chip integrated semiconductor laser with tunable wavelength and without mode hopping comprises the optics cavity be made up of Waveguide end face and wavelength dispersion diffraction grating, place optics cavity one side provide gain one group of active waveguide array, place the optics cavity opposite side to select the wavelength dispersion diffraction grating of emission optical maser wavelength as filter, be made up of waveguide zone and wavelength tuning district between active waveguide and the wavelength dispersion diffraction grating, the wavelength tuning district is sandwiched between the pair of electrodes.
Thereby optical cavity length can be regulated automatically and reach no mode hopping output when the shape in wavelength tuning district was conditioned excitation wavelength; Send and incide on the wavelength dispersion diffraction grating any two light paths of two diverse locations by any one waveguide in one group of active waveguide array and will cross the wavelength tuning district along straight line separately, the shape and size in wavelength tuning district make these any two straight lines in the wavelength tuning district optical path difference and the ratio of total optical path difference be a constant, constant wherein and light path equate with the ratio that comes and goes total optical path in optics cavity by the round light path of wavelength tuning district part.
The present invention compares with background technology, and the beneficial effect that has is:
The invention discloses a kind of single chip integrated semiconductor laser with tunable wavelength and without mode hopping.This laser can be realized the mode jump free continuous tuning of shoot laser.This laser has the wavelength tuning district of a given shape and size, this zone is clipped between the pair of electrodes, thereby change the wavelength that this regional effective refractive index is regulated grating filter by a kind of electrical effect, regulate the length of optics cavity simultaneously, make that the wavelength regulation of the adjusting of zlasing mode wavelength and grating filter is synchronous, thereby just can realize mode jump free continuous tuning by single electrode control.In addition, the present invention also can be used for multiband integrated tunable laser and multi-wavelength tunable laser array.
Description of drawings
Fig. 1 is the semiconductor tunable laser of background technology.
Fig. 2 is the wavelength demultiplexer based on integrated balzed grating, of background technology.
Fig. 3 is first kind of structural representation of integrated tunable laser of the present invention.
Fig. 4 is an OC place cross-sectional view among Fig. 3.
Fig. 5 is the schematic diagram (b) of a grating filter spectral response schematic diagram (a) and resonant cavity Fabry-Perot pattern.
Fig. 6 is second kind of structural representation of integrated tunable laser of the present invention.
Fig. 7 is the third structural representation of integrated tunable laser of the present invention.
Fig. 8 be one based on the integrated tunable laser schematic diagram with a plurality of output wave bands of the present invention.
Fig. 9 is the ad-hoc location of sinc shape diffraction envelope function, operation wavelength and the schematic diagram that needs repressed parasitic wavelength location.
Figure 10 is based on an integrated tunable laser array schematic diagram of the present invention.
Among the figure: I, DBR grating, II, active gain district, III, phase-shifted region, G1, common waveguide, G2, active waveguide array, 1, active waveguide, 2, the wavelength tuning district, 3, waveguide zone, 4, balzed grating,, 5, top covering, 6, sandwich layer, 7, resilient coating, 8, substrate, 9, bottom electrode, 10, top electrode, 11, output waveguide, 12, input waveguide, 13, balzed grating,, 14, monomode fiber.
Embodiment
Select the laser difference of operation wavelength, device of the present invention to be based on the wavelength dispersion diffraction grating with conventional use DBR or DFR (distributed feed-back) grating and carry out that wavelength selects, for example balzed grating,, array waveguide grating.Present waveguide diffraction grating technology is comparative maturity, can be used as wavelength (separating) multiplexer and well is applied in the dwdm system of optical communication.
Fig. 2 be exactly one typically based on the schematic diagram of the wavelength demultiplexer of integrated diffraction grating, it comprises an I/O waveguide array and a balzed grating.The input optical signal of different wave length is coupled to by optical fiber 14 in the input waveguide 12 of demodulation multiplexer, at the other end of input waveguide, will disperse when light enters planar waveguide, incides etching balzed grating, 13 and then is returned in the planar waveguide by optical grating reflection.To be converged to the inlet of output waveguide 11 according to the curvature reflection ray of grating.Because the dispersion characteristics of diffraction grating, wavelength optical signals is converged to different output waveguide 11.For a given output waveguide, chosen wavelength of optical signal depends on the effective refractive index of planar waveguide and the geometry parameter of grating.
Fig. 3 is a Wavelength tunable laser of the present invention.It consists of the following components: an active waveguide 1 (gain region), a waveguide zone 3 of a balzed grating, 4 (wavelength selection) and a wavelength tuning district 2.Resonant cavity is made up of Waveguide end face M and balzed grating.
Fig. 4 is the sectional view in Fig. 3 middle plateform wave guide zone 3 and wavelength tuning district 2.Planar waveguide is made up of resilient coating 7, sandwich layer 6, top covering 5 three parts and is deposited in the substrate.Top electrode 10 is deposited to the top in wavelength tuning district.The bottom deposit of substrate 8 metal bottom electrode 9.Electrode can change the refractive index of waveguide by certain mode, for example to the planar waveguide injection current or a controlled electric field is provided.
By the outgoing of O point and can reflect through balzed grating, 4 and return the optical wavelength that O orders and must meet the following conditions:
Wherein ΔΦ is the phase difference of light at the A of balzed grating, facet point and P point generation reflex time, and λ is the wavelength in the vacuum, m
gBe that the grating diffration level is inferior, N is the grating periodicity between an A and the some P, n and n
tThe refractive index of representing waveguide zone 3 and wavelength tuning district 2 respectively.
Fig. 5 can see that waveguide has the mould field profile of Gauss's shape.Balzed grating, 4 and active waveguide 1 formed a spectral filter, and it is corresponding that it has the spectrum of a specific width.The passband of spectral filter function may comprise a plurality of Fabry-Perot moulds (Fig. 5) of resonant cavity.Suppose that the outer actual gain of passband is quite low, Wavelength of Laser will be by the minimum Fabry-Perot mould decision of loss in the passband so.The wavelength of the Farby-Perot mould in the resonant cavity of being made up of Waveguide end face M and balzed grating, is determined by following formula:
n
a, L
aBe the refractive index and the length of active waveguide 1, L be the end points O of active waveguide 1 to the distance between the center C of grating, l is the length (l=OD) that OC is positioned at the part in wavelength tuning district 2, m
FPBe one and the corresponding integer of Fabry-Perot modulus.
When the effective refractive index in wavelength tuning district 2 is influenced by curtage and changes, the spectral response wavelength of balzed grating, 4 and the wavelength of Farby-Perot mould all will be conditioned.For fear of mode hopping, these two wavelength must be regulated with identical speed.Derive by formula (1) and can obtain the tuning rate of balzed grating, 4 frequency spectrums:
Δ l wherein
p=γ Δ L
pCan obtain the tuning rate of Farby-Perot mould with reason formula (2):
The right by formula (3) (4) equates, can obtain:
In order to realize not having mode hopping work, this conditional decision the shape in the tuning district 2 of Fig. 3 medium wavelength.In other words, when the effective refractive index in wavelength tuning district 2 is subjected to the influence of electric current or extra electric field and sends out and go up when changing, Farby-Perot mould and balzed grating, 4 spectral responses are with synchronous change.
In addition, the C point also on 4 of balzed grating,s, therefore satisfies Δ lp=γ Δ Lp at the C point, promptly equally
Carry it into (5) and can get n
aL
a(l-OA)=nOA (L-l) ... (6)
Hence one can see that when each parameter of balzed grating, 4 and active waveguide 1 is determined, can try to achieve the value of l according to this formula, and then try to achieve γ.
Discussed above is wavelength tuning district 2 boundary curve upper extreme points and the situation that grating summit A overlaps, and ordinary circumstance is discussed below.
The boundary curve upper extreme point in wavelength tuning district 2 is any point M on the OA as shown in Figure 6.Above in the case each equation is still set up, but the Δ l here
p=OQ-OM, i.e. therefore the wavelength difference of two light paths in wavelength tuning district 2, other each parameter-definition can obtain and above identical γ expression formula (5) with above various identical.In addition, because C point also on 4 of balzed grating,s, therefore satisfies Δ lp=γ Δ Lp at the C point equally, and at this moment
Carrying it into formula (5) can get:
n
aL
a(l-OM)＝n(OM·L-OA·l)……………………………(7)
Relatively (6), (7) formula are as can be known, (6) formula is the special circumstances of (7) formula when the M point overlaps with the A point, (7) formula is that M is that OA goes up the general expression formula under any point situation, under any situation, only needs each parameter to satisfy shape and size that following formula can be determined wavelength tuning district 2.
The situation that is wavelength tuning district 2 on waveguide zone 3 left sides discussed above, same wavelength tuning district 2 also can be placed on the right, and wavelength tuning district 2 is on the right of waveguide zone 3 as shown in Figure 7.Above in this case variously still set up, different is the Δ l here
p=PQ-AM still is the wavelength difference of two light paths in wavelength tuning district 2.L=CD is the part of OC in wavelength tuning district 2.Therefore other each parameter-definition can obtain identical γ expression formula (5) with above various identical.In addition, because C point also on 4 of balzed grating,s, therefore satisfies Δ lp=γ Δ Lp at the C point equally, and at this moment
Carrying it into formula (5) can get:
n
aL
a(l-AM)＝n(AM·L-OA·l)………………………………(8)
When wavelength tuning district 2 during, only need each parameter to satisfy shape and size that formula (8) can be determined wavelength tuning district 2 on waveguide zone 3 the right.
Can see by formula (3), but wavelength regulation scope approximate representation is
Like this will to a γ value bigger than normal, in order to realize the maximization of wavelength regulation scope, need wavelength tuning district 2 length bigger than normal correspondingly.Wavelength tuning range can approximate representation be
And less than Δ n
t/ n
tBecause greatly about about 0.1%, and the chances are under the situation that electric current injects about 1% when the reverse bias electro optic effect for accessible variations in refractive index, so the scope of tuning without mode skip generally is that a nanometer is to several nanometers.
Cover wideer wave-length coverage or multiband more, can realize by a plurality of active waveguides, as shown in Figure 8.For a given wavelength, correspondingly active waveguide 1 will be by pumping in the array. and the central waveguide that is provided with the source waveguide array is G2, and active waveguide G1 is the common waveguide of all wave bands, and it is always by pumping.Resonant cavity is made up of part reflecting face M1 and high reflecting surface M2.Output light is coupled in the optical fiber by part reflecting face M1.Can be changed the output wave band by the active waveguide of pumping by switching in the waveguide array.The centre wavelength of wave band is corresponding with the given active waveguide G2 of array central authorities, can be expressed as λ ≈ n Λ (sin θ
1+ sin θ
2)/m
g, wherein Λ represents 4 cycles of balzed grating,, θ
1And θ
2Be active waveguide G1, G2 is with the angle (all active waveguides are all aimed at balzed grating, 4 center C) of the normal at balzed grating, 4 center of curve C point places.
Be that active waveguide in the active waveguide array at center is during by pumping as active waveguide G1 with G2, also may produce other shoot laser wavelength, this is because also there is other resonant cavity: be made up of part reflecting face M1 and balzed grating, 4 for one, another is made up of high reflecting surface M2 and balzed grating.The wavelength that these resonant cavitys produce can obtain λ respectively by following formula
1≈ 2n Λ sin θ
1/ m
g, λ
2≈ 2n Λ sin θ
2/ m
gIn order to prevent multi-wavelength outgoing simultaneously, must note the design of demodulation multiplexer.The terminal O1 of public active waveguide G1 must keep apart with the active waveguide array.Active waveguide 1 material is in wavelength X when their distance is enough far away
1, λ
2Gain will be more much lower than the gain of wavelength X.And the gain of λ is very near the gain peak of material central task wave band.In addition, the grating face is glittered, thereby makes the transmission maximization of public active waveguide G1 to the center active waveguide G2 of active waveguide array.The diffraction characteristic of single grating face has determined that the envelope curve of diffraction is a sinc shape curve, after the physical dimension that to the order of diffraction of balzed grating, 4 time is the grating face is carried out optimization, can make λ
1, λ
2Near the zone of intensity minimum on the curve, make λ simultaneously near peak of curve, as shown in Figure 9.
For some application-specific, need the outgoing simultaneously of a plurality of wavelength sometimes.This can utilize the structure of Fig. 8 to realize equally, only needs the active waveguide in the two or more active waveguide arrays of pumping simultaneously to get final product.A plurality of wavelength can be by simultaneously tuning in wave band separately.With the optical communication is example, if the laser of a plurality of wavelength needs by directly tuning respectively, the common waveguide G1 of so a plurality of laser should be passive or have minimum pumping (and gain), so that the minimum of crosstalking that different laser produces after the cross-gain modulation.
As shown in figure 10, a bit little modification is carried out in design, the device of present invention can also be improved to a tunable laser array, the light wave of a different-waveband of each laser emission.All be coupled in the same optical fiber differently at part reflecting face M1 place with the laser of each wavelength among Fig. 8, the project organization among Figure 10 need be coupled to each excitation wavelength in a plurality of different optical fiber.The light that the blaze angle optimization of grating face can be made central active waveguide emission can turn back in the former waveguide after by balzed grating, 4 reflections again.Because the wavelength regulation of each laser is to be realized by identical wavelength tuning district 2, so they are strict synchronism.
Utilize current invention thought, much other concrete device can be implemented in addition, for example can use array waveguide grating to replace balzed grating.
Claims (7)
1. single chip integrated semiconductor laser with tunable wavelength and without mode hopping, it is characterized in that: comprise the optics cavity of forming by Waveguide end face (M) and wavelength dispersion diffraction grating (4), place optics cavity one side that an active waveguide (1) of gain is provided, place the optics cavity opposite side to select the wavelength dispersion diffraction grating (4) of emission optical maser wavelength as filter, form by waveguide zone (3) and wavelength tuning district (2) between active waveguide and the wavelength dispersion diffraction grating, wavelength tuning district (2) is sandwiched between the pair of electrodes, and electrode can change the refractive index of waveguide by certain mode;
Send and incide any two light paths of last two diverse locations of wavelength dispersion diffraction grating (4) by active waveguide (1) and will cross wavelength tuning district (2) along straight line separately, the shape and size in wavelength tuning district (2) make any two straight lines in wavelength tuning district (2) optical path difference and the ratio of total optical path difference be a constant γ, this constant γ equates by the ratio of the round light path of wavelength-modulated device district (2) part with round total optical path in optics cavity with light path.
2. a kind of single chip integrated semiconductor laser with tunable wavelength and without mode hopping according to claim 1 is characterized in that: described wavelength dispersion diffraction grating (4) is a balzed grating.
3. a kind of single chip integrated semiconductor laser with tunable wavelength and without mode hopping according to claim 1, it is characterized in that: when wavelength tuning district (2) left side in waveguide zone (3), one end in wavelength tuning district (2) is the terminal O of waveguide, the border of another side is curve M B, and curve M B is by formula Δ l
p=γ Δ L
pDecision, wherein Δ L
p=OP-OA, the O point is the end points of waveguide, A be on the grating curve from the nearest point of the end points O of waveguide point, M is any point on the OA line, P is any set point on the grating; Δ l
p=OQ-OM, OQ represent that along the OP direction by the distance of O point to wavelength tuning district (2) boundary curve, OM represents along the OA direction by the distance of O point to wavelength tuning district (2) boundary curve; γ is a constant, is the ratio of total optical path difference in optical path difference in the wavelength tuning district and the optics cavity, and each parameter need satisfy relational expression n
aL
a(l-OM)=n (OML-OAl); Wherein: n
a, L
aBe the refractive index and the length of active waveguide, L be the end points O of active waveguide to the distance between the center C of grating, l is the length that OC is positioned at the part in wavelength tuning district.
4. want 1 described a kind of single chip integrated semiconductor laser with tunable wavelength and without mode hopping according to right, it is characterized in that: when wavelength tuning district (2) the right in waveguide zone (3), one end in wavelength tuning district (2) is the grating surface curve, the border of another side is curve M B, and curve M B is by formula Δ l
p=γ Δ L
p, Δ L wherein
p=OP-OA, the O point is the end points of waveguide, A be on the grating curve from the nearest point of the end points O of waveguide point, M is any point on the OA line, P is any set point on the grating; Δ l
p=PQ-AM, PQ represent that along the OP direction by the distance of P point to wavelength tuning district (2) boundary curve, AM represents along the OA direction by the distance of A point to wavelength tuning district (2) boundary curve; γ is a constant, is the ratio of total optical path difference in optical path difference in the wavelength tuning district and the optics cavity, and each parameter need satisfy relational expression n
aL
a(l-AM)=n (AML-OAl); Wherein: n
a, L
aBe the refractive index and the length of active waveguide, L be the end points O of active waveguide to the distance between the center C of grating, l is the length that OC is positioned at the part in wavelength tuning district.
5. single chip integrated semiconductor laser with tunable wavelength and without mode hopping is characterized in that: comprise that a active waveguide (1) that part reflecting face (M1), same part reflecting face (M1) combine is combined to form one group of high reflecting surface (M2) array of an optics cavity, combines with one group of high reflecting surface (M2) and provides one group of active waveguide (1) array of gain for the optics cavity at place separately by pumping the time as common waveguide, same part reflecting face (M1); The corresponding corresponding optical band of each active waveguide (1) in one group of active waveguide (1) array, an a branch of light that is used for receiving by the emission of one group of active waveguide (1) array outputs to the active waveguide (1) as common waveguide to light beam and selects the wavelength dispersion diffraction grating (4) of an excitation wavelength in a certain wave band as filter; Form by wavelength tuning district (2) and waveguide zone (3) between active waveguide (1) and the wavelength dispersion diffraction grating (4); Wavelength tuning district (2) is sandwiched between the pair of electrodes, and electrode can change the refractive index of waveguide by certain mode;
Thereby optical cavity length can be regulated automatically and reach no mode hopping output when the shape in wavelength tuning district was conditioned excitation wavelength; Send and incide any two light paths of last two diverse locations of wavelength dispersion diffraction grating (4) by any one waveguide in one group of active waveguide (1) array and will cross wavelength tuning district (2) along straight line separately, the shape and size in wavelength tuning district (2) make these any two straight lines in the wavelength tuning district optical path difference and the ratio of total optical path difference be a constant, constant wherein and light path equate with the ratio that comes and goes total optical path in optics cavity by the round light path of wavelength tuning district part.
6. a single chip integrated semiconductor laser with tunable wavelength and without mode hopping according to claim 5, it is characterized in that: an active waveguide (1) and one group of active waveguide (1) array as common waveguide are set at ad-hoc location, so that wavelength dispersion diffraction grating (4) minimizes to diffraction efficiency in these locational backs, make simultaneously by maximizing as the wavelength diffraction efficiency in the common resonant cavity of forming of an active waveguide (1) and one group of active waveguide (1) array institute of common waveguide.
7. single chip integrated semiconductor laser with tunable wavelength and without mode hopping, it is characterized in that: comprise the optics cavity of forming by Waveguide end face (M) and wavelength dispersion diffraction grating (4), place optics cavity one side that one group of active waveguide (1) array of gain is provided, place the optics cavity opposite side to select to form by waveguide zone (3) and wavelength tuning district (2) between wavelength dispersion diffraction grating (4) active waveguide of emission optical maser wavelength and the wavelength dispersion diffraction grating as filter, wavelength tuning district (2) is sandwiched between the pair of electrodes, and electrode can change the refractive index of waveguide by certain mode;
Thereby optical cavity length can be regulated automatically and reach no mode hopping output when the shape in wavelength tuning district was conditioned excitation wavelength; Send and incide any two light paths of last two diverse locations of wavelength dispersion diffraction grating (4) by any one waveguide in one group of active waveguide (1) array and will cross wavelength tuning district (2) along straight line separately, the shape and size in wavelength tuning district (2) make these any two straight lines in the wavelength tuning district optical path difference and the ratio of total optical path difference be a constant, constant wherein and light path equate with the ratio that comes and goes total optical path in optics cavity by the round light path of wavelength tuning district part.
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| CN101800393B (en) * | 2010-04-09 | 2011-05-18 | 浙江大学 | Integrated array waveguide laser based on diffraction grating |
| CN101968552B (en) * | 2010-09-27 | 2013-01-09 | 上海交通大学 | X-ray wavelength dispersion and diffraction based hazardous article detection method |
| CN102412504B (en) * | 2011-11-25 | 2013-06-12 | 李若林 | Phase coupling reflection grating feedback-based wavelength tunable laser |
| CN105319629B (en) * | 2015-11-03 | 2017-10-20 | 浙江大学 | The etched diffraction grating device that Channel depletion is uniform and passband response is flat |
| CN110729630B (en) * | 2019-10-11 | 2020-12-11 | 浙江大学 | Laser with high-speed wavelength tuning made of lithium niobate material |
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