CN100585893C - LED and manufacturing method thereof - Google Patents
LED and manufacturing method thereof Download PDFInfo
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- CN100585893C CN100585893C CN200710089768A CN200710089768A CN100585893C CN 100585893 C CN100585893 C CN 100585893C CN 200710089768 A CN200710089768 A CN 200710089768A CN 200710089768 A CN200710089768 A CN 200710089768A CN 100585893 C CN100585893 C CN 100585893C
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Abstract
The invention discloses a LED and a manufacturing method thereof. The LED at least comprises: a conductive substrate with oppositely a first and a second surfaces; a reflection structure at least comprising a conductive reflection layer jointed on the conductive substrate, and a conductive dispersed Bragg reflection structure overlapped on the conductive reflection layer; a light emitting epitaxial structure arranged on the reflection structure; a first electrode arranged on part of the light emitting epitaxial structure; and a second electrode jointed with the second surface of the conductive substrate.
Description
Technical field
The invention relates to a kind of photoelectric cell and manufacture method thereof, and particularly relevant for a kind of light-emitting diode and manufacture method thereof.
Background technology
Semiconductor light-emitting elements, for example light-emitting diode is the element that utilizes semi-conducting material made, is a kind of fine solid state light emitter that converts electrical energy into luminous energy.Because, this based semiconductor light emitting element not only volume is little, have more that driving voltage is low, reaction rate is fast, shatter-proof, characteristic such as the life-span is long, and can cooperate light, thin, short, the little demand of various application apparatus again, thereby become photoelectric cell quite universal in the daily life.
At present, quite common a kind of method that increases the light output of light-emitting diode is by improving the light extraction efficiency of light-emitting diode.The method that increases the light taking-up efficient of light-emitting diode roughly has following several.First kind is to utilize direct etching LED surface, comes roughened surface, uses to reach the effect that the light that improves light-emitting diode takes out efficient.In the mode of surperficial roughening, normally protect the regional area on surface by mask, carry out wet type or dry-etching again, reach the purpose of surperficial roughening.But, the mode of surperficial roughening, the uniformity of surperficial roughening is not good.Second kind then is to utilize etching mode to change the external form of light-emitting diode.But the processing procedure of the second way is comparatively complicated, so process rate is not good.The third then is by the mode of mirror surface is set.Yet; it is not good to utilize the light-emitting diode of the third mode manufacturing can face electrical quality usually; and the not good problem of the adhesive force of mirror surface and epitaxial layer, have a strong impact on the operation usefulness and the production reliability of light-emitting diode, more can cause the life-span reduction of light-emitting diode.
Summary of the invention
Therefore, purpose of the present invention is providing a kind of light-emitting diode exactly, has by conduction distributing Bragg reflection (Distributed Bragg Reflector; DBR) therefore the catoptric arrangement formed of structure and conductive reflective not only has conductivity, more can improve reflectivity, and then can improve the light extraction efficiency of light-emitting diode.
Another object of the present invention is that a kind of manufacturing method for LED is being provided, and it is to form the conduction distributing Bragg reflection structure of being made up of several layers of transparency conducting layer on luminous epitaxial structure.Owing to have splendid ohmic contact characteristic and tack between transparency conducting layer and the luminous epitaxial structure, therefore not only can improve the light extraction efficiency and the electrical quality of light-emitting diode, more can promote process rate and element reliability.
According to above-mentioned purpose of the present invention, a kind of light-emitting diode is proposed, comprise at least: an electrically-conductive backing plate has opposite first and second surface; One catoptric arrangement comprises at least: a conductive reflective is bonded on the first surface of electrically-conductive backing plate; And folded being located on the conductive reflective of a conduction distributing Bragg reflection structure; One luminous epitaxial structure is located on the catoptric arrangement; One first electrode is located on the luminous epitaxial structure of part; And one second electrode engagement in the second surface of electrically-conductive backing plate, wherein, the material of this conduction distributing Bragg reflection structure is to be selected from a group that is made up of tin indium oxide, cadmium tin, zinc oxide, indium oxide, tin oxide, cupric oxide aluminium, cupric oxide gallium and strontium oxide strontia copper.
According to a preferred embodiment of the present invention, above-mentioned conductive reflective is a metallic reflector.
According to purpose of the present invention, a kind of light-emitting diode is proposed, comprise at least: a transparency carrier; One luminous epitaxial structure comprises at least: one first electrical semiconductor layer is positioned on the transparency carrier; One active layers is positioned in the first of the first electrical semiconductor layer, and exposes the first electrical semiconductor layer second portion; And one second electrical semiconductor layer be positioned on the active layers, wherein the first electrical semiconductor layer and the second electrical semiconductor layer have different electrically; One catoptric arrangement comprises at least: a conduction distributing Bragg reflection structure is located on the second electrical semiconductor layer; And one conductive reflective is folded is located on the conduction distributing Bragg reflection structure; One second electrical electrode is located on the catoptric arrangement; And one first electrical electrode be located on this second portion of the first electrical semiconductor layer, wherein, the material of this conduction distributing Bragg reflection structure is to be selected from a group that is made up of tin indium oxide, cadmium tin, zinc oxide, indium oxide, tin oxide, cupric oxide aluminium, cupric oxide gallium and strontium oxide strontia copper.
According to a preferred embodiment of the present invention, the material of above-mentioned transparency carrier is to be selected from a group that is made up of sapphire (Sapphire), carborundum (SiC), silicon (Si), zinc oxide (ZnO), magnesium oxide (MgO), aluminium nitride (AlN) and gallium nitride (GaN).
According to purpose of the present invention, a kind of manufacturing method for LED is proposed in addition, comprise at least: a growth substrate is provided; Form a luminous epitaxial structure on the growth substrate; Form a catoptric arrangement on luminous epitaxial structure, wherein catoptric arrangement comprises at least: a conduction distributing Bragg reflection structure is positioned on the luminous epitaxial structure, and the material of this conduction distributing Bragg reflection structure is to be selected from a group that is made up of tin indium oxide, cadmium tin, zinc oxide, indium oxide, tin oxide, cupric oxide aluminium, cupric oxide gallium and strontium oxide strontia copper; And one conductive reflective be positioned on the conduction distributing Bragg reflection structure; Engage an electrically-conductive backing plate and conductive reflective, wherein electrically-conductive backing plate has opposite first and second surface, and the first surface of electrically-conductive backing plate engages with conductive reflective; Remove this growth substrate, to expose luminous epitaxial structure; And form on the second surface that one first electrode and one second electrode lay respectively at the luminous epitaxial structure of part and electrically-conductive backing plate.
According to a preferred embodiment of the present invention, above-mentioned conduction distributing Bragg reflection structure comprises at least: one first low refraction coefficient transparency conducting layer is positioned on the luminous epitaxial structure; One high index of refraction transparent conductive laminate is located on the first low refraction coefficient transparency conducting layer; And one second low refraction coefficient transparent conductive laminate be located on this high index of refraction transparency conducting layer.
According to purpose of the present invention, a kind of manufacturing method for LED is more proposed, comprise at least: a transparency carrier is provided; Form a luminous epitaxial structure on transparency carrier, wherein luminous epitaxial structure comprises one first electrical semiconductor layer, an active layers and the one second electrical semiconductor layer that piles up in regular turn at least, and wherein the first electrical semiconductor layer has different electrical with the second electrical semiconductor layer; Define luminous epitaxial structure, to expose the first electrical semiconductor layer of part; Form a catoptric arrangement on the second electrical semiconductor layer, wherein catoptric arrangement comprises at least: a conduction distributing Bragg reflection structure is positioned on the second electrical semiconductor layer, and the material of this conduction distributing Bragg reflection structure is to be selected from a group that is made up of tin indium oxide, cadmium tin, zinc oxide, indium oxide, tin oxide, cupric oxide aluminium, cupric oxide gallium and strontium oxide strontia copper; And one conductive reflective be positioned on the conduction distributing Bragg reflection structure; And form one first electrical electrode and one second electrical electrode lays respectively on the expose portion and conductive reflective of the first electrical semiconductor layer.
According to a preferred embodiment of the present invention, above-mentioned conduction distributing Bragg reflection structure is a multiple-level stack structure, and this multiple-level stack structure comprises a plurality of low refraction coefficient transparency conducting layer and a plurality of high index of refraction transparency conducting layer that piles up alternately at least.
Description of drawings
Figure 1A to Fig. 3 is the processing procedure profile that illustrates according to a kind of light-emitting diode of a preferred embodiment of the present invention.
Figure 1B is the profile that illustrates according to a kind of light emitting diode construction of a preferred embodiment of the present invention.
Fig. 4 to Fig. 6 is the processing procedure profile that illustrates according to a kind of light-emitting diode of another preferred embodiment of the present invention.
Embodiment
The present invention discloses a kind of light-emitting diode and manufacture method thereof.In order to make narration of the present invention more detailed and complete, can be with reference to the accompanying drawing of following description and cooperation Figure 1A to Fig. 6.
Please refer to Figure 1A to Fig. 3, it illustrates the processing procedure profile according to a kind of light-emitting diode of a preferred embodiment of the present invention.In an example embodiment, growth substrate 100 at first is provided, for follow-up brilliant material building crystal to grow of heap of stone thereon, the material of the substrate 100 of wherein growing up can for example be sapphire, carborundum, silicon, zinc oxide, magnesium oxide, aluminium nitride or gallium nitride etc.Utilize for example Metalorganic chemical vapor deposition method (Metal OrganicChemical Vapor Deposition again; MOCVD), liquid phase deposition (Liquid Phase Deposition; LPD) or molecular beam epitaxy method (Molecular Beam Epitaxy; MBE) the luminous epitaxial structure 108 of growth on the surface of growth substrate 100.In one embodiment, luminous epitaxial structure 108 comprises at least and is stacked on growth substrate 100 lip-deep first electrical semiconductor layers 102, active layers 104 and the second electrical semiconductor layer 106 in regular turn.In the present invention, first electrically is different electrical with second electrically.In this example embodiment, first is the N type electrically, and second is the P type electrically.
Next, utilize for example transparency conducting layer of evaporation mode different refraction coefficients of mutual deposition tool on the second electrical semiconductor layer 106 of luminous epitaxial structure 108, to form conduction distributing Bragg reflection structure 110.Conduction distributing Bragg reflection structure 110 can be piled up alternately by the transparency conducting layer of three layers or multilayer tool high index of refraction and low refraction coefficient and be formed, and causes light to reflect with the difference of the refraction coefficient that utilizes low-index layer and high refractive index layer.In this example embodiment, conduction distributing Bragg reflection structure 110 comprises that the transparency conducting layer 128 of the low refraction coefficient of tool is positioned on the second electrical semiconductor layer 106 of luminous epitaxial structure 108, on the folded transparency conducting layer 128 that is located at the low refraction coefficient of tool of the transparency conducting layer of tool high index of refraction 130 and the transparency conducting layer 132 of the low refraction coefficient of tool fold and be located on the transparency conducting layer 130 of tool high index of refraction, shown in Figure 1A.Wherein, the refraction coefficient of transparency conducting layer 128 can be identical with the refraction coefficient of transparency conducting layer 132, also can be different with the refraction coefficient of transparency conducting layer 132.In addition, the transparency conducting layer 128 of the low refraction coefficient of tool can be made up of same material with transparency conducting layer 132, also can be made up of different materials.The material of conduction distributing Bragg reflection structure 110 can be selected from tin indium oxide, cadmium tin, zinc oxide, indium oxide, tin oxide, cupric oxide aluminium, cupric oxide gallium or strontium oxide strontia copper etc.Then, form conductive reflective 112 and cover on the conduction distributing Bragg reflection structure 110, and the structure of formation shown in Figure 1A.Wherein, conduction distributing Bragg reflection structure 110 constitutes a catoptric arrangement 113 with conductive reflective 112.Conductive reflective 112 is preferably a metallic reflector, and the material of conductive reflective 112 can for example be the alloy of aluminium, gold, platinum, zinc, silver, nickel, germanium, indium, tin or above-mentioned these metals.
In another example embodiment of the present invention, please refer to shown in Figure 1B, in this light emitting diode construction, conduction distributing Bragg reflection structure 110a is that the transparency conducting layer 130a by the transparency conducting layer 128a of the low refraction coefficient of several tools and several tool high index of refraction is piled up alternately and forms.Though in this example embodiment, conduction distributing Bragg reflection structure 110a adopts the transparency conducting layer 130a of the transparency conducting layer 128a of several layers of same material and several layers of same material to pile up alternately to form, yet in the present invention, conduction distributing Bragg reflection structure also can adopt the several layers of low refraction coefficient transparency conducting layer of being made up of different or incomplete same material to be piled up alternately by high index of refraction transparency conducting layer different or that incomplete same material is formed and to form with several layers.In the same manner, after the distributing Bragg reflection structure 110a that waits to conduct electricity completes, form conductive reflective 112 and cover on the conduction distributing Bragg reflection structure 110a, and the structure of formation shown in Figure 1B.Wherein, conduction distributing Bragg reflection structure 110a and conductive reflective 112 constitute a catoptric arrangement 113a.
In this example embodiment, after waiting to finish the making of catoptric arrangement 113, provide electrically-conductive backing plate 114, wherein electrically-conductive backing plate 114 has facing surfaces 116 and surface 118.The material of electrically-conductive backing plate 114 can for example be silicon or metal.Again electrically-conductive backing plate 114 is engaged with the conductive reflective 112 of catoptric arrangement 113.In this example embodiment, when engaging electrically-conductive backing plate 114, can utilize conductive bond layer 120 to engage with conductive reflective 112.Wherein, can earlier conductive bond layer 120 be formed on the surface 116 of electrically-conductive backing plate 114, perhaps can earlier conductive bond layer 120 be formed on the conductive reflective 112, and then utilize conductive bond layer 120 to engage electrically-conductive backing plate 114 and conductive reflective 112.In one embodiment, the material of conductive bond layer 114 can be selected from the alloy of aluminium, gold, platinum, zinc, silver, nickel, germanium, indium, tin, titanium, lead, copper, palladium or above-mentioned these metals.In another embodiment, the material of conductive bond layer 114 can for example be the macromolecular material of elargol, spontaneous conducting polymer or conductive doped material.After electrically-conductive backing plate 114 is bonded on catoptric arrangement 113, utilize for example chemical etching mode or lapping mode to remove growth substrate 100, exposing the first electrical semiconductor layer 102 of luminous epitaxial structure 108, and form structure as shown in Figure 2.
Then, form electrode 122 on the part of the first electrical semiconductor layer 102 of luminous epitaxial structure 108, wherein electrode 122 is first electrical.The material of electrode 122 can for example be indium (In), aluminium (Al), titanium (Ti), gold (Au), tungsten (W), indium stannum alloy (InSn), titanium nitride (TiN), tungsten silicide (WSi), platinum indium alloy (PtIn
2), neodymium/aluminium (Nd/Al), nickel/silicon (Ni/Si), palladium/aluminium (Pd/Al), tantalum/aluminium (Ta/Al), titanium/silver (Ti/Ag), tantalum/silver (Ta/Ag), titanium/aluminium (Ti/Al), titanium/gold (Ti/Au), titanium/titanium nitride (Ti/TiN), zirconium/zirconium nitride (Zr/ZrN), gold/germanium/nickel (Au/Ge/Ni), chromium/nickel/gold (Cr/Ni/Au), nickel/chromium/gold (Ni/Cr/Au), palladium/gold (Ti/Pd/Au), titanium/platinum/gold (Ti/Pt/Au), titanium/aluminium/nickel/gold (Ti/Al/Ni/Au), gold/silicon/titanium/gold/silicon (Au/Si/Ti/Au/Si) or gold/nickel/titanium/silicon/titanium (Au/Ni/Ti/Si/Ti).Simultaneously, form electrode 124 on the surface 118 of electrically-conductive backing plate 114, electrode 122 and electrode 124 lay respectively at relative two sides of luminous epitaxial structure 108 thus, and wherein electrode 124 is second electrical.At this moment, roughly finish the making of light-emitting diode 126, as shown in Figure 3.The material of electrode 124 can for example be nickel/gold (Ni/Au), nickel oxide/gold (NiO/Au), palladium/silver/gold/titanium/gold (Pd/Ag/Au/Ti/Au), platinum/ruthenium (Pt/Ru), titanium/platinum/gold (Ti/Pt/Au), palladium/nickel (Pd/Ni), nickel/palladium/gold (Ni/Pd/Au), platinum/nickel/gold (Pt/Ni/Au), ruthenium/gold (Ru/Au), niobium/gold (Nb/Au), cobalt/gold (Co/Au), platinum/nickel/gold (Pt/Ni/Au), nickel/platinum (Ni/Pt), nickel indium alloy (NiIn) or platinum indium alloy (Pt
3In
7).
Owing to have excellent ohmic contact characteristic and good tack between the transparency conducting layer of conduction distributing Bragg reflection structure and the luminous epitaxial structure, therefore can promote the electrical quality and the operation reliability of light-emitting diode.In addition, utilize multilayer low/the distributing Bragg reflection structure that the high refractive index transparent conductive layer is stacked into alternately not only can improve the reflectivity of catoptric arrangement, and increases the light extraction efficiency of light-emitting diode, more with conductive effect.
Please refer to Fig. 4 to Fig. 6, it illustrates the processing procedure profile according to a kind of light-emitting diode of another preferred embodiment of the present invention.In an example embodiment, at first provide growth substrate 200, thereon for follow-up brilliant material building crystal to grow of heap of stone.In this example embodiment, growth substrate 200 is transparency carriers.Wherein, the material of growth substrate 200 can for example be sapphire, carborundum, silicon, zinc oxide, magnesium oxide, aluminium nitride or gallium nitride etc.For example utilize Metalorganic chemical vapor deposition method, liquid phase deposition or the molecular beam epitaxy method luminous epitaxial structure 208 of on the surface of growth substrate 200, growing up again.In one embodiment, luminous epitaxial structure 208 comprises at least and is stacked on growth substrate 200 lip-deep first electrical semiconductor layers 202, active layers 204 and the second electrical semiconductor layer 206 in regular turn.In the present invention, first electrically is different electrical with second electrically.In this example embodiment, first is the N type electrically, and second is the P type electrically.Next, utilize for example little shadow and etching mode that luminous epitaxial structure 208 is carried out pattern definition.In this pattern definition, remove the second electrical semiconductor layer 206 of part and the active layers 204 of part, until the part surface 214 that exposes the first electrical semiconductor layer, and formation structure as shown in Figure 4.
After waiting to finish the definition of luminous epitaxial structure 208, utilize for example transparency conducting layer of evaporation mode different refraction coefficients of mutual deposition tool on the second electrical semiconductor layer 206 of luminous epitaxial structure 208, to form conduction distributing Bragg reflection structure 210.Conduction distributing Bragg reflection structure 210 can be piled up alternately by the transparency conducting layer of three layers or multilayer tool high index of refraction and low refraction coefficient and be formed, and causes light to reflect with the difference of the refraction coefficient that utilizes low-index layer and high refractive index layer.In this example embodiment, conduction distributing Bragg reflection structure 210 comprises that the transparency conducting layer 222 of the low refraction coefficient of tool is positioned on the second electrical semiconductor layer 206 of luminous epitaxial structure 208, on the folded transparency conducting layer 222 that is located at the low refraction coefficient of tool of the transparency conducting layer of tool high index of refraction 224 and the transparency conducting layer 226 of the low refraction coefficient of tool fold and be located on the transparency conducting layer 224 of tool high index of refraction, as shown in Figure 5.Wherein, the refraction coefficient of transparency conducting layer 222 can be identical with the refraction coefficient of transparency conducting layer 226, also can be different with the refraction coefficient of transparency conducting layer 226.In addition, the transparency conducting layer 222 of the low refraction coefficient of tool can be made up of same material with transparency conducting layer 226, also can be made up of different materials.The material of conduction distributing Bragg reflection structure 210 can be selected from tin indium oxide, cadmium tin, zinc oxide, indium oxide, tin oxide, cupric oxide aluminium, cupric oxide gallium or strontium oxide strontia copper etc.Then, form conductive reflective 212 and cover on the conduction distributing Bragg reflection structure 210, and formation structure as shown in Figure 5.Wherein, conduction distributing Bragg reflection structure 210 constitutes catoptric arrangement 213 with conductive reflective 212.Conductive reflective 212 is preferably by metallic reflector and is constituted, and the material of conductive reflective 212 can for example be the alloy of aluminium, gold, platinum, zinc, silver, nickel, germanium, indium, tin or above-mentioned these metals.
Then, form electrode 216 on the exposed surface 214 of the first electrical semiconductor layer 202 of luminous epitaxial structure 208, wherein electrode 216 is first electrical.The material of electrode 216 can for example be indium, aluminium, titanium, gold, tungsten, indium stannum alloy, titanium nitride, tungsten silicide, platinum indium alloy, neodymium/aluminium, nickel/silicon, palladium/aluminium, tantalum/aluminium, titanium/silver, tantalum/silver, titanium/aluminium, titanium/gold, titanium/titanium nitride, zirconium/zirconium nitride, gold/germanium/nickel, chromium/nickel/gold, nickel/chromium/gold, palladium/gold, titanium/platinum/gold, titanium/aluminium/nickel/gold, gold/silicon/titanium/gold/silicon or gold/nickel/titanium/silicon/titanium.Simultaneously, form electrode 218 on the conductive reflective 212 of catoptric arrangement 213, electrode 216 is the same sides that are positioned at luminous epitaxial structure 208 with electrode 218 thus, and wherein electrode 218 is second electrical.At this moment, roughly finish the making of light-emitting diode 220, as shown in Figure 6.The material of electrode 218 can for example be nickel/gold, nickel oxide/gold, palladium/silver/gold/titanium/gold, platinum/ruthenium, titanium/platinum/gold, palladium/nickel, nickel/palladium/gold, platinum/nickel/gold, ruthenium/gold, niobium/gold, cobalt/gold, platinum/nickel/gold, nickel/platinum, nickel indium alloy or platinum indium alloy.
By the invention described above preferred embodiment as can be known, one advantage of the light-emitting diode of above-mentioned example embodiment is exactly because it has the catoptric arrangement of being made up of conduction distributing Bragg reflection structure and conductive reflective, therefore not only has conductivity, also reflectivity can be improved, and then the light extraction efficiency of light-emitting diode can be improved.
By the invention described above preferred embodiment as can be known, an advantage of the manufacturing method for LED of above-mentioned example embodiment is exactly because it is to form the conduction distributing Bragg reflection structure of being made up of several layers of transparency conducting layer on luminous epitaxial structure.Owing to have splendid ohmic contact characteristic and tack between transparency conducting layer and the luminous epitaxial structure, therefore not only can improve the light extraction efficiency and the electrical quality of light-emitting diode, more can promote process rate and element reliability.
Though the present invention discloses as above with a preferred embodiment; right its is not in order to limit the present invention; any those having an ordinary knowledge in this technical field; without departing from the spirit and scope of the present invention; when can doing various changes and retouching, so protection scope of the present invention is when with being as the criterion that claim was defined.
Claims (9)
1. light-emitting diode comprises at least:
One electrically-conductive backing plate has a relative first surface and a second surface;
One catoptric arrangement comprises at least:
One metal or alloy reflector is bonded on this first surface of this electrically-conductive backing plate; And
One conduction distributing Bragg reflection structure, folded being located on this metal or alloy reflector;
One luminous epitaxial structure is located on this catoptric arrangement;
One first electrode is located on this luminous epitaxial structure of part; And
One second electrode is engaged in this second surface of this electrically-conductive backing plate,
Wherein the material of this conduction distributing Bragg reflection structure is to be selected from a group that is made up of tin indium oxide, cadmium tin, zinc oxide, indium oxide, tin oxide, cupric oxide aluminium, cupric oxide gallium and strontium oxide strontia copper.
2. light-emitting diode as claimed in claim 1 is characterized in that, the material of this electrically-conductive backing plate is to be selected from a group that is made up of silicon and metal.
3. light-emitting diode as claimed in claim 1 is characterized in that, also comprises a conductive bond layer at least between this electrically-conductive backing plate and this metal or alloy reflector, to engage this electrically-conductive backing plate and this metal or alloy reflector.
4. light-emitting diode as claimed in claim 1, it is characterized in that, this conduction distributing Bragg reflection structure is a multiple-level stack structure, and this multiple-level stack structure comprises a plurality of low refraction coefficient transparency conducting layer and a plurality of high index of refraction transparency conducting layer that piles up alternately at least.
5. light-emitting diode comprises at least:
One transparency carrier;
One luminous epitaxial structure comprises at least:
One first electrical semiconductor layer is positioned on this transparency carrier;
One active layers is positioned in the first of this first electrical semiconductor layer, and exposes this first electrical semiconductor layer one second portion; And
One second electrical semiconductor layer is positioned on this active layers, and wherein this first electrical semiconductor layer has different electrical with this second electrical semiconductor layer;
One catoptric arrangement comprises at least:
One conduction distributing Bragg reflection structure is located on this second electrical semiconductor layer; And
One metal or alloy reflector, folded being located on this conduction distributing Bragg reflection structure;
One second electrical electrode is located on this catoptric arrangement; And
One first electrical electrode is located on this second portion of this first electrical semiconductor layer,
Wherein the material of this conduction distributing Bragg reflection structure is to be selected from a group that is made up of tin indium oxide, cadmium tin, zinc oxide, indium oxide, tin oxide, cupric oxide aluminium, cupric oxide gallium and strontium oxide strontia copper.
6. light-emitting diode as claimed in claim 5 is characterized in that, the material of this transparency carrier is to be selected from a group that is made up of sapphire, carborundum, silicon, zinc oxide, magnesium oxide, aluminium nitride and gallium nitride.
7. light-emitting diode as claimed in claim 5, it is characterized in that, this conduction distributing Bragg reflection structure is a multiple-level stack structure, and this multiple-level stack structure comprises a plurality of low refraction coefficient transparency conducting layer and a plurality of high index of refraction transparency conducting layer that piles up alternately at least.
8. manufacturing method for LED comprises at least:
One growth substrate is provided;
Form a luminous epitaxial structure on this growth substrate;
Form a catoptric arrangement on this luminous epitaxial structure, wherein this catoptric arrangement comprises at least:
One conduction distributing Bragg reflection structure, be positioned on this luminous epitaxial structure, the material of this conduction distributing Bragg reflection structure is to be selected from a group that is made up of tin indium oxide, cadmium tin, zinc oxide, indium oxide, tin oxide, cupric oxide aluminium, cupric oxide gallium and strontium oxide strontia copper; And
One metal or alloy reflector is positioned on this conduction distributing Bragg reflection structure;
Engage an electrically-conductive backing plate and this metal or alloy reflector, wherein this electrically-conductive backing plate has a relative first surface and a second surface, and this first surface of this electrically-conductive backing plate engages with this metal or alloy reflector;
Remove this growth substrate, to expose this luminous epitaxial structure; And
Form on this luminous epitaxial structure and this second surface of this electrically-conductive backing plate that one first electrode and one second electrode lay respectively at part.
9. manufacturing method for LED comprises at least:
One transparency carrier is provided;
Form a luminous epitaxial structure on this transparency carrier, wherein this luminous epitaxial structure comprises one first electrical semiconductor layer, an active layers and the one second electrical semiconductor layer that piles up in regular turn at least, and wherein this first electrical semiconductor layer has different electrical with this second electrical semiconductor layer;
Define this luminous epitaxial structure, to expose this first electrical semiconductor layer of part;
Form a catoptric arrangement on this second electrical semiconductor layer, wherein this catoptric arrangement comprises at least:
One conduction distributing Bragg reflection structure, be positioned on this second electrical semiconductor layer, the material of this conduction distributing Bragg reflection structure is to be selected from a group that is made up of tin indium oxide, cadmium tin, zinc oxide, indium oxide, tin oxide, cupric oxide aluminium, cupric oxide gallium and strontium oxide strontia copper; And
One metal or alloy reflector is positioned on this conduction distributing Bragg reflection structure; And
Form one first electrical electrode and one second electrical electrode lays respectively on this expose portion and this metal or alloy reflector of this first electrical semiconductor layer.
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| CN101859860B (en) * | 2010-05-04 | 2013-04-10 | 厦门市三安光电科技有限公司 | Method for preparing AlGaInP-series light-emitting diode with double reflecting layers |
| CN102299229A (en) * | 2010-06-22 | 2011-12-28 | 联胜光电股份有限公司 | Light emitting diode with Bragg film and metal layer |
| CN102447026B (en) * | 2010-10-11 | 2014-11-05 | 展晶科技(深圳)有限公司 | Light emitting diode (LED) epitaxial structure |
| TWI707484B (en) * | 2013-11-14 | 2020-10-11 | 晶元光電股份有限公司 | Light-emitting device |
| CN104681673B (en) * | 2013-12-03 | 2017-11-03 | 上海蓝光科技有限公司 | A kind of manufacture method of light emitting diode |
| CN108198926A (en) * | 2018-01-31 | 2018-06-22 | 南昌大学 | A kind of film-type AlGaInP light-emitting diode chip for backlight unit and preparation method thereof |
| CN111630775B (en) * | 2018-02-14 | 2023-03-24 | 株式会社村田制作所 | Resonance device and resonance device manufacturing method |
| CN111725375A (en) * | 2019-03-22 | 2020-09-29 | 新世纪光电股份有限公司 | Red light-emitting diode and manufacturing method thereof |
| CN113206446A (en) * | 2021-04-30 | 2021-08-03 | 厦门大学 | Method for manufacturing nitride vertical cavity surface emitting laser based on conductive oxide DBR |
| CN113363805A (en) * | 2021-05-31 | 2021-09-07 | 厦门大学 | Nitride vertical cavity surface emitting laser based on conductive oxide DBR and manufacturing method |
| CN116759516A (en) * | 2022-09-13 | 2023-09-15 | 泉州三安半导体科技有限公司 | Light-emitting device and light-emitting element |
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