CN100583469C - Light-emitting apparatus - Google Patents
Light-emitting apparatus Download PDFInfo
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- CN100583469C CN100583469C CN200580051635A CN200580051635A CN100583469C CN 100583469 C CN100583469 C CN 100583469C CN 200580051635 A CN200580051635 A CN 200580051635A CN 200580051635 A CN200580051635 A CN 200580051635A CN 100583469 C CN100583469 C CN 100583469C
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- backlight unit
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Abstract
A light emitting device includes a light emitting diode chip, a heat conductive plate mounting thereon the light emitting diode chip, a sub-mount member disposed between said light emitting diode chip and said heat conductive plate, a dielectric substrate stacked on the heat conductive plate and being formed with a through-hole through which the sub-mount member is exposed, an encapsulation member for encapsulation of said light emitting diode chip, and a lens superimposed on the encapsulation member. The sub-mount member is formed around a coupling portion of the light emitting diode chip with a reflective film which reflects a light emitted from a side face of the light emitting diode chip. The sub-mount member is selected to have a thickness such that the reflecting film has its surface spaced away from said heat conductive plate by a greater distance than said dielectric substrate.
Description
Technical field
The present invention relates to utilize the light-emitting device of LED (light-emitting diode) chip.
Background technology
The patent application that the patent application of Japanese unexamined discloses 2001-85748 number (being called patent document 1 hereinafter) and Japanese unexamined discloses 2001-148514 number (being called patent document 2 hereinafter) and has proposed a kind of light-emitting device, and this light-emitting device comprises led chip; The circuit board of led chip is installed; Surround the metal framework (for example, made of aluminum) of the led chip on the circuit board surface; Package parts (for example, by making such as the transparent resin of epoxy resin and silicones), it is filled in the framework with packaging LED chips and the closing line that is connected to led chip.The shape of disclosed framework is arranged to have the open area in the patent document 1 and 2, far away more from circuit board, this open area is just big more, and this framework is polished with interior minute surface (mirror interior face), should play reflector by interior minute surface, be used to reflect light from the led chip emission.Yet find, owing to absorbed by circuit board from the light of the side institute radiation of led chip, or leak by the junction surface between framework and the circuit board, light takes out from above light-emitting device unsatisfactorily effectively.
Summary of the invention
The present invention is directed to above problem and make, its objective is provides a kind of light-emitting device, and this light-emitting device can improve its light output.
Light-emitting device according to the present invention comprises: led chip; Heat-conducting plate, it is made by Heat Conduction Material, so that led chip is installed thereon; Be configured to the sub-installing component of writing board shape, its yardstick is arranged to greater than led chip and less than heat-conducting plate; Be stacked on the dielectric base plate on the conducting-heat elements; Package parts are by transparent and the rubber-like material makes so that packaging LED chips; And overlay lens on the package parts.Sub-installing component is arranged between led chip and the heat-conducting plate, to alleviate owing to the thermal linear expansion coefficient difference between led chip and the heat-conducting plate is applied to stress on the led chip.And dielectric base plate is provided with the pair of lead wires pattern with the heat-conducting plate facing surfaces, is used for being electrically connected with the electrode of led chip respectively.In addition, dielectric base plate is formed with through hole, and sub-installing component exposes by this through hole.Sub-installing component comprises the reflectance coating on every side of the knot that is arranged on led chip, so that reflection is from the light of led chip sidewall emission, and the chooser installing component has such thickness: make the surface of reflectance coating and heat-conducting plate distance greater than with the distance of dielectric base plate.
Because light-emitting device of the present invention is configured to comprise the sub-installing component that has reflectance coating, this sub-installing component has such thickness: make the surface of reflectance coating and heat-conducting plate distance greater than with the distance of dielectric base plate, so can prevent that the surface of dielectric base plate or sidewall are to the absorption from the light of led chip sidewall emission, take out efficient thereby improved light, correspondingly improved light output thereupon.
Generally speaking, color converting member is arranged on the surface of dielectric base plate, so that change from the color of the light of led chip or metal framework radiation, and the light of this metal framework reflection led chip.By selecting such thickness: make the surface of reflectance coating and heat-conducting plate distance greater than with the distance of dielectric base plate, even above color converting member is arranged on the surface of dielectric base plate, can prevent that also light from passing through the junction surface leakage between above color converting member and the dielectric base plate.
Therefore, can improve light and take out efficient, also can reduce shade irregular (colorshading).
Preferably, led chip and sub-installing component all are configured to have square plan-form shapes separately, and led chip is arranged on sub-installing component central authorities in such a way: the flat limit of led chip is intersected with the corresponding diagonal of sub-installing component respectively.
In this case, reflectance coating can be effectively to the light of sub-installing component reflection from each sidewall radiation of led chip.Preferably, light-emitting device further comprises the framework that is arranged on the dielectric base plate surface, so that surround sub-installing component and described led chip, and package parts are limited by the transparent material that is filled in the framework.Framework forms by transparent material is molded.
Framework can be configured to determine the size of package parts.In addition, compare with the regular situation that framework is made by metal material, poor by the thermal linear expansion coefficient that the molded framework that forms of transparent material can reduce between framework and the package parts, under cryogenic conditions, produce the space so that be suppressed at the thermal cycle test period.And framework self can reduce reflection loss of light, thereby has improved light output efficiency.
Preferably, led chip is formed with one of electrode on one surface, and is formed with another electrode on another surface.Electrode adjacent with sub-installing component in the described electrode is connected to a closing line by the conductive pattern on the sub-installing component, and is connected to the closing line that extends along one of diagonal of led chip away from another electrode of sub-installing component.
In this case, closing line seldom has an opportunity to stop the light from the sidewall radiation of led chip, therefore, can reduce to take out owing to the light that exists closing line to cause the reduction of efficient.
Light-emitting device preferably is configured to further comprise dome shape color converting member, and it is arranged on the dielectric base plate so that cover lens.Color converting member is by the molded moulding part that forms of the transparent material that mixes with fluorescent material, and this fluorescent material is launched and the radiation color light different with the color of led chip by the optical excitation of package parts from led chip.In addition, color converting member is arranged between the light emitting surface of described color converting member and lens and forms air layer.
Providing of color converting member makes it possible to the radiation color different with the color of led chip.And color converting member is arranged between the light emitting surface of color converting member and lens and forms air layer.When color converting member was subjected to external force, air layer can suppress the color converting member scioptics and package parts pass to led chip with stress.In addition, can reduce to be directed and the amount of the light of scioptics, promptly from the led chip radiation and scioptics and package parts incide color converting member and by the part of the light of the fluorescent particles scattering the color converting member.Therefore, the light that can improve whole device takes out efficient.In addition, can protect led chip not to be subjected to the influence of the wet steam in the external environment condition.Because do not need to make color converting member closely to contact, can reduce the decline of the output that causes owing to the dimensional accuracy relevant or positioning accuracy with color converting member with lens.
Description of drawings
Fig. 1 is the cross-sectional view strength of light-emitting device according to an embodiment of the invention;
Fig. 2 is the decomposition diagram of the partial cut of above device;
Fig. 3 is the plane graph of the major part of the above device of explanation;
Fig. 4 is the perspective view of employed sub-installing component in the above device;
Fig. 5 A is the schematic diagram of the major part of above device;
Fig. 5 B is the schematic diagram of the major part of above device;
Fig. 6 is the cross section of the another kind configuration of above device; And
Fig. 7 is the cross section of the further configuration of above device.
Embodiment
Hereinafter, the present invention is described in detail with reference to the accompanying drawings.
As illustrated in fig. 1 and 2, the light-emitting device 1 according to present embodiment comprises: led chip 10; Circuit board 20 is made so that led chip 10 is installed thereon by thermally-conductive materials; Framework 40 is enclosed in the lip-deep led chip 10 of circuit board 20; Package parts 50, it has elasticity and is made by trnaslucent materials (transparent resin), and this material is filled in the framework 40 so that packaging LED chips 10 and be connected to the closing line 14 of led chip 10; Overlay the lens 60 on the package parts 50; And dome shape color change parts 70, it is a moulding part, forms so that the transparent material of fluorescent material is molded by mixing, and is arranged on the circuit board 20 so that cover lens 60.The light-emitting device 1 of present embodiment is suitable for use as for example light source of lighting apparatus, is installed in by the dielectric layer of being made by for example embolium (green sheet) 90 on the metal body 100 (for example, being made by the high thermoconductivity metal such as aluminium or copper) of equipment.Owing to be installed on the metal body 100 of equipment, 100 thermal resistance can diminish from led chip 10 to metal body, thereby improves heat-sinking capability.In addition, because can limit the temperature rise at the knot place of led chip, thus can increase input power, thus power output increased.Should be noted that thus when light-emitting device 1 was used for lighting apparatus, a plurality of light-emitting devices 1 can be installed on the metal body 100 of equipment, light-emitting device interconnects in the mode of serial or parallel connection, so that the Output optical power that acquisition is wanted.
Each lead pattern 23 realizes by means of the lamination of being made up of Ni layer and Au layer, and limits inner lead portion 23a by its part that is positioned at framework 40, and do not limited external lead portion 23b by the part that colour switching parts 70 cover by it.Each lead pattern 23 is not limited to the lamination of Ni layer and Au layer, also can pass through the lamination of Cu layer, Ni layer and Ag layer and realize.
Led chip 10 is based on the blue led chip of the GaN of radiation blue light, and is configured to have square plan-form shapes.Led chip 10 comprises the electrically-conductive backing plate as epitaxial substrate, and it is a n type SiC substrate, and it is big that the degree ratio that lattice constant and crystal structure approach GaN approaches sapphire degree, and have conductivity.First type surface at electrically-conductive backing plate 11 also is formed with luminous component 12, and it is made by the semi-conducting material based on GaN, and obtains by epitaxial growth (for example, MOVPE handles), so that have for example laminar structure of double-heterostructure.Cathode electrode (n type electrode) (not shown) forms the cathode side electrode at the dorsal part of electrically-conductive backing plate 11.Anode electrode (p type electrode) (not shown) forms anode side electrode on the surface (the top surface of the first type surface of electrically-conductive backing plate 11) of luminous component 12.In brief, led chip 10 has anode electrode on one surface, and has cathode electrode at reverse side.
Should be noted that, although the lamination that the cathode electrode of present embodiment and anode electrode all are made up of Ni layer and Au layer is formed, yet cathode electrode and anode electrode are not limited to certain material, and can be made by the material (for example Al) of the ohm property that demonstrates.In addition, present embodiment illustrates, and led chip 10 is installed on the metallic plate 21, and wherein the distance that separates of the luminous component 12 of led chip 10 and metallic plate 21 is more farther than the distance that separates with electrically-conductive backing plate 11.Yet, can like this led chip 10 be installed on the metallic plate 21 equally: make luminous component 12 nearer apart from conductive plate 11 apart from the metallic plate ratio.Although take out the angle of efficient from light, it is desirable that luminous component 12 and metallic plate 21 are separated, and does not take out loss but luminous component 12 is not increased light with metallic plate 21 near setting, and reason is, in the present embodiment, electrically-conductive backing plate 11 and luminous component 12 have the refractive index of same levels.
Led chip 10 is installed on the metallic plate 21 by the sub-installing component 30 in the through hole 24.The shape of sub-installing component 30 is arranged to rectangular slab (being the square-shaped planar plate in this example), its yardstick is arranged to greater than led chip 10 and less than metallic plate 21, and alleviates owing to the linear expansion coefficient difference between led chip 10 and the metallic plate 21 is applied to stress on the led chip 10.In addition, except alleviating above-mentioned stress, sub-installing component 30 also has thermal conducting function, on than the wideer zone of the chip size of led chip 10, metallic plate 21 is arrived in the heat conduction that led chip 10 produces.The heat that led chip 10 produces is transmitted to metallic plate 21 by sub-installing component 30, and without dielectric base plate 22.
Should be noted that thus, although adopt the material of AlN as sub-installing component 30 because AlN has higher pyroconductivity and insulation property simultaneously, but the material of sub-installing component 30 is not limited to AlN, also can select it to have approaching linear expansion coefficient and higher pyroconductivity, for example composite SiC, Si or the like of linear expansion coefficient with the electrically-conductive backing plate of making by 6H-SiC 11.
As shown in Figure 4, sub-installing component 30 comprises conductive pattern 31, this conductive pattern 31 is connected to led chip 10 lip-deep above-mentioned cathode electrodes, and comprises the reflectance coating 32 (for example lamination of Ni film and Ag film, Al film etc.) of reflection from the radiant light of led chip 10 sides.In brief, sub-installing component 30 comprises reflectance coating 32, and its junction surface that is set at led chip 10 is on every side with the radiant light of reflection from led chip 10 sides.In addition, chooser installing component 30 has such thickness: make the surface of reflectance coating 32 and metallic plate 21 (heat-conducting plate) distance greater than with the distance of dielectric base plate 22.
By except on sub-installing component 30, being provided with the reflectance coating 32, the thickness of chooser installing component 30 in the above described manner also, the sidewall that can prevent the surface of sub-installing component 30 and dielectric base plate 22 is to the absorption from the radiant light of led chip 10 sidewalls, and can also prevent leakage, take out efficient thereby improved light via the junction surface between colour switching parts 70 and the dielectric base plate 22.And, by preventing that it is irregular to reduce shade from the leakage via the above-mentioned junction surface between colour switching parts 70 and the dielectric base plate 22 of the radiant light of led chip 10 sidewalls.
Led chip 10 has cathode electrode, and this cathode electrode is electrically connected to one of lead pattern 23 by conductive pattern 31 and by closing line 14 (for example, thin golden lead, thin aluminum conductor); And have anode electrode, this anode electrode is electrically connected to another lead pattern 23 by closing line 14.
Led chip 10 is arranged on sub-installing component 30 central authorities in such a way: make the flat limit of led chip 10 intersect with the corresponding diagonal of sub-installing component 30.In the present embodiment, the central axis of the central axis of led chip 10 and sub-installing component 30 is along its thickness direction substantial registration, and the corresponding diagonal in each flat limit of led chip 10 and the diagonal is with about 45 ° angle of intersection.With a kind of like this setting, can reflect radiant light effectively at reflectance coating 32 places from each sidewall of led chip 10.Led chip 10 is arranged on sub-installing component 30 central authorities in such a way: make the flat limit of led chip 10 intersect with the corresponding diagonal of sub-installing component 30.
In the present embodiment, the central axis of the central axis of led chip 10 and sub-installing component 30 is along its thickness direction substantial registration, and the corresponding diagonal in each flat limit of led chip 10 and the diagonal is with about 45 ° angle of intersection.With a kind of like this setting, can reflect radiant light effectively at reflectance coating 32 places from each sidewall of led chip 10.
As shown in Figure 3, the light-emitting device of present embodiment disposes like this: each closing line 14 that makes electricity be coupled to led chip 10 extends along cornerwise direction of led chip 10, so that reduce to stop the chance from the radiant light of every side of led chip 10.Therefore, by closing line 14 is provided, can suppress the reduction that light takes out efficient.
Although led chip 10 and sub-installing component 30 can utilize such as the scolder of SnPb, AuSn, SnAgCu or silver paste and engage, they are preferably by using the lead-free solder such as AuSn, SnAgCu to engage.
Silicones is used for package parts 50 as transparent material.Yet package parts can be made by acrylic resin, and without silicones.
Framework 40 is by the molded drum that becomes of transparent resin.Framework 40 is arranged on the dielectric base plate 22, to surround led chip 10 and sub-installing component 30.Present embodiment illustrates, and framework 40 is made by silicones, promptly has the transparent material with the almost equal thermal linear expansion coefficient of the thermal linear expansion coefficient of package parts 50.During without silicones, it is desirable to use acrylic resin to come mold frame 40 when acrylic resin being used for package parts 50.Present embodiment points out, package parts 50 are by being filled in the framework and the transparent material of hot curings after framework 40 is adhered to circuit board 20 limits.
Because framework 40 is provided, the size of package parts 50 can be determined by framework 40.In addition, compare with the regular situation that framework is made by metal material, poor by the thermal linear expansion coefficient that the molded framework that forms 40 of transparent material can reduce between framework 40 and the package parts 50, thus suppressed under cryogenic conditions, to produce the space at the thermal cycle test period.And framework 40 can reduce reflection loss of light, thereby has improved light output efficiency.
The shape of the inner surface 70a of color converting member 70 is set to consistent with the light emission surface 60b of lens 60, thereby on the whole surface of light emission surface 60b, obtain the normal direction distance between the inner surface 70a of uniform light emission surface 60b and color converting member 70.In addition, the shape of color converting member 70 is arranged to have homogeneous thickness along normal direction.
By means of the joint (not shown) that is provided by for example adhesive (for example silicones, epoxy resin), on the periphery of the opening of color converting member 70, color converting member 70 is fixed on the dielectric base plate 22, so that obtain being limited to the light emission surface 60b of color converting member 70 and lens 60 and the air layer 80 between the framework 40.When color converting member 70 was out of shape because of being subjected to external force, the existence of air layer 80 had reduced the possibility that contacts between lens 60 and the color converting member 70.Therefore, can prevent because external force and the stress that produces at color converting member 70 places passes to led chip 10 and closing line 14, thereby reduce the reduction of luminescent properties of led chip 10 and the fracture of closing line 14, thus improved reliability.In addition, owing between color converting member 70 and lens 60, provide air layer 80, can protect led chip 10 not to be subjected to the influence of the wet steam in the external environment condition.In addition, because do not need to make color converting member 70 closely to contact, can reduce the decline of the output that causes owing to the dimensional accuracy relevant or positioning accuracy with color converting member 70 with lens 60 and framework 40.Because color converting member 70 is last assemblings, simply by selecting color converting member 70 just can reduce misalignment, wherein at the mixed proportion of adjusting fluorescent material and transparent material from the light wavelength of led chip 10.
And, owing between color converting member 70 and lens 60, provide air layer 80, can reduce the amount of getting back to the light the lens 60, promptly incide color converting member 70 backs by the part of the light of the yellow fluorescent particles scattering the color converting member 70 from led chip 10 emissions and via package parts 50 and lens 60 from color converting member 70 diffusions.Therefore, the light that can improve whole device takes out efficient.
Describe below with reference to Fig. 5 A and Fig. 5 B, wherein the optical axis alignment of the optical axis of color converting member 70 and led chip makes from center point P, on each direction the equably scattering of blue light from color converting member 70 along its optical axis of led chip 10 radiation.For at a light of P scattering, it is effusion cone (escape cone) ECa of 2 θ a and the effusion cone ECb that extended corner is 2 θ b that color converting member 70 produces extended corner in the inboard of color converting member 70 and the outside respectively.Shown in Fig. 5 A, when alinternal reflection angle φ a and φ b are 40 °, extended corner is represented as 2 θ a=60 °, 2 θ b=98 °, and shown in Fig. 5 B, when alinternal reflection angle φ a and φ b are 50 °, 2 θ a=76 °, 2 θ b=134 °, wherein alinternal reflection angle φ a is the definition at the interface between color converting member 70 and air layer, and alinternal reflection angle φ b is to be defining at the interface between the medium outside the color converting member 70 at color converting member 70 and air.
The blue light that guides at a P scattering and the effusion cone ECa by the color converting member inboard has the emission maximum efficiency eta, is expressed as η=(1/4n
2) * 100 (%), wherein n is the refractive index that forms the transparent material of color converting member 70.Therefore, when using the silicones of n=1.4 as mentioned above,
In other words, when between color converting member 70 and the lens 60 air layer 80 being set, the only 13% reflected back lens 60 in a blue light of P scattering, and when not having air layer 80, reflection reaches about 50% blue light.Therefore, light extraction efficiency can be improved, and the deterioration of the package parts 50 that cause owing to blue light can be suppressed.It is desirable to, the color converting member 70 that used thickness increases reduces the blue light that guides by effusion cone ECa.
The transparent material that is used for color converting member 70 is not limited to silicones, can also comprise for example acrylic resin, epoxy resin, glass.In addition, the fluorescent material that is mixed into the transparent material that is used for color converting member 70 is not limited to yellow fluorescent material, can replace with the red fluorescent material and the green fluorescence mixtures of material that produce white light.
Above embodiment illustrates and uses the electrically-conductive backing plate 11 of SiC substrate as carrying led chip 10, and wherein led chip 10 is blue led chips of blue light-emitting, yet as an alternative, substrate 11 can be made by the GaN substrate.Compare with using the dielectric sapphire substrate, when using SiC and GaN substrate, epitaxial substrate has higher pyroconductivity, thereby has reduced thermal resistance.Led chip 10 can be configured to red-emitting or green glow, rather than blue light.The material of the luminous component 12 of led chip 10 is not limited to the semiconductor composite based on GaN, can also comprise the semiconductor composite based on GaAs, perhaps based on the semiconductor composite of GaP.
In addition, electrically-conductive backing plate 11 is not limited to the SiC substrate, selects the GaAs substrate that can also adapt from the material with luminous component 12, the GaP substrate etc.
As discussed above, the light-emitting device 1 of present embodiment is configured to comprise the reflectance coating 32 on the sub-installing component 30, and so the thickness of chooser installing component makes that the surface distance metallic plate (heat conductivity plate) 21 of reflectance coating 32 is far away than the surface apart from dielectric base plate 22.Utilize this configuration, can prevent to absorb from the surface of the light quilt installing component 30 of the sidewall of led chip 10 emission or the sidewall of dielectric base plate, can also prevent that this light from leaking via the junction surface between color converting member 70 and the dielectric base plate 22, thereby improve light output efficiency.Because delivery efficiency improves, light output also is improved.Although it should be noted that present embodiment shows light-emitting device 1 and has the framework of being made by transparent resin 40, framework is omissible, as shown in Figure 6.
In addition, the light-emitting device 1 of present embodiment can use the framework 40 made by common metal ', rather than the framework of making by transparent resin 40.In the case, the thickness of sub-installing component 30 is also so selected, and makes that surface distance metallic plate (heat conductivity plate) 21 ratios of reflectance coating 32 are far away apart from dielectric base plate 22.Therefore, can make a kind of like this light-emitting device, it can prevent to be absorbed by the sidewall of dielectric base plate 32 from the light of the sidewall radiation of led chip 10, and prevent light via metal framework 40 ' and dielectric base plate 22 between the junction surface leak, thereby improved light extraction efficiency, correspondingly improved light output thereupon.
As discussed above, obviously can in the scope of technological thought of the present invention, imagine various embodiment, therefore, the present invention should not be limited to certain embodiments, and should be limited by claim.
Claims (5)
1. light-emitting device comprises:
Light-emitting diode chip for backlight unit;
Heat-conducting plate, described heat-conducting plate is made by Heat Conduction Material, so that described light-emitting diode chip for backlight unit is installed on described heat-conducting plate;
Dull and stereotyped formula installing component, its yardstick is arranged to greater than described light-emitting diode chip for backlight unit and less than described heat-conducting plate, described sub-installing component is arranged between described light-emitting diode chip for backlight unit and the described heat-conducting plate, so that alleviate owing to the thermal linear expansion coefficient difference between described light-emitting diode chip for backlight unit and the described heat-conducting plate acts on stress on the described light-emitting diode chip for backlight unit;
Be stacked on the dielectric base plate on the described heat-conducting plate, described dielectric base plate is provided with the pair of lead wires pattern with described heat-conducting plate facing surfaces, be used for being electrically connected with described electrode of light emitting diode respectively, described dielectric base plate is formed with through hole, and described sub-installing component exposes by described through hole;
Package parts, described package parts are made by transparent and rubber-like material, so that encapsulate described light-emitting diode chip for backlight unit;
Overlay the lens on the package parts;
Wherein,
Described sub-installing component comprises reflectance coating, and described reflectance coating is arranged on around the junction surface of described light-emitting diode chip for backlight unit, so that reflection is from the light of the side-emitted of described light-emitting diode chip for backlight unit; And
Select described sub-installing component to have such thickness, make the surface of described reflectance coating and described heat-conducting plate distance greater than with the distance of described dielectric base plate.
2. light-emitting device according to claim 1, wherein,
Described light-emitting diode chip for backlight unit and described sub-installing component all are configured to have square plan-form shapes separately, described light-emitting diode chip for backlight unit is arranged on described sub-installing component central authorities in such a way, makes the flat limit of described light-emitting diode chip for backlight unit intersect with the corresponding diagonal of described sub-installing component respectively.
3. light-emitting device according to claim 1 further comprises:
Be arranged on the surface of described dielectric base plate so that surround the framework of described sub-installing component and described light-emitting diode chip for backlight unit, described package parts are limited by the transparent material that is filled in the described framework, and described framework forms by transparent resin is molded.
4. light-emitting device according to claim 1, wherein,
Described light-emitting diode chip for backlight unit is formed with an electrode on one surface, on another surface, be formed with another electrode, electrode near described sub-installing component in the described electrode is connected to a closing line by the conductive pattern on the described sub-installing component, and being connected to another closing line away from another electrode of described sub-installing component, described another closing line extends along one of diagonal of described light-emitting diode chip for backlight unit.
5. light-emitting device according to claim 1 further comprises:
Dome shape color converting member, it is arranged on the described dielectric base plate so that cover described lens, described color converting member is by the molded moulding part that forms of the transparent material that mixes with fluorescent material, described fluorescent material by from the emission of described light-emitting diode chip for backlight unit and by the optical excitation of described package parts the radiation color light different with the color of described light-emitting diode chip for backlight unit, described color converting member is arranged between the light emitting surface of described color converting member and described lens and forms air layer.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005272832 | 2005-09-20 | ||
| JP272832/2005 | 2005-09-20 | ||
| JP334683/2005 | 2005-11-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101268557A CN101268557A (en) | 2008-09-17 |
| CN100583469C true CN100583469C (en) | 2010-01-20 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200580051635A Expired - Fee Related CN100583469C (en) | 2005-09-20 | 2005-12-28 | Light-emitting apparatus |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111755581A (en) * | 2019-03-27 | 2020-10-09 | 隆达电子股份有限公司 | Light emitting diode carrier and light emitting diode package having the same |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5499325B2 (en) * | 2009-06-01 | 2014-05-21 | 東芝ライテック株式会社 | Light emitting module and lighting device |
| CN102378477B (en) * | 2010-08-19 | 2015-02-18 | 欣兴电子股份有限公司 | Circuit board and manufacturing method thereof |
| TWI505765B (en) * | 2010-12-14 | 2015-10-21 | Unimicron Technology Corp | Wiring board and method for fabricating the same |
| TWI501428B (en) * | 2011-01-14 | 2015-09-21 | Lextar Electronics Corp | Light emitting diode package structure |
| KR102261288B1 (en) * | 2017-03-14 | 2021-06-04 | 현대자동차 주식회사 | Light emitting diode package for automobile exterior |
-
2005
- 2005-12-28 CN CN200580051635A patent/CN100583469C/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111755581A (en) * | 2019-03-27 | 2020-10-09 | 隆达电子股份有限公司 | Light emitting diode carrier and light emitting diode package having the same |
| CN111755581B (en) * | 2019-03-27 | 2022-03-15 | 隆达电子股份有限公司 | Light emitting diode carrier and light emitting diode package having the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101268557A (en) | 2008-09-17 |
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