CN100580878C - Exposure apparatus, method for processing substrate, and method for manufacturing device - Google Patents

Abstract

An exposure apparatus (EX) has a detector (60) for detecting a defect in thin films (Rg, Tc) formed on a substrate (P). In liquid immersion exposure where the substrate (P) is exposed through liquid (LQ), an outflow of the liquid caused by a defect in the thin films (Rg, Tc) is detected before it occurs to suppress a reduction in productivity of devices and prevent an occurrence of disturbance in the exposure apparatus.

Description

Exposure device, substrate processing method using same and device making method

Technical field

The present invention relates to exposure light is shone on substrate so that the exposure device of base plate exposure, substrate processing method using same and device making method.

Background technology

In the employed exposure device, existing proposition is a kind of as the liquid immersion exposure apparatus that following patent documentation disclosed in photo-mask process, and the liquid that forms liquid on substrate soaks the zone, and makes base plate exposure via this liquid.

[patent documentation 1] international brochure that discloses No. 99/49504

The liquid of desiring to form well liquid on substrate soaks the zone, must make the liquid contact surface that contacts with liquid of substrate become desirable state.For example, be formed at films such as sensitization material on the substrate when forming with desirable state, can't form liquid well and soak the zone, and produce from the substrate trickle, maybe can't make desirable pattern image be exposed to the first-class bad situation of substrate, cause the device production reduction.

Again, when not forming film with desirable state on substrate, for example the part of this film might be from strippable substrate.When the part of film was peeled off, the part of the film that this is peeled off might become foreign matter, was attached on the substrate or sneaked in the liquid.When under having the state of foreign matter, substrate being exposed, might produce the bad situations such as pattern generating defective that are formed on the substrate, cause the device production reduction.

Summary of the invention

The present invention finishes in view of said circumstances, and its purpose is to provide and can makes exposure device, substrate processing method using same and the device making method that substrate exposes well, the suppression device productivity reduces.

For addressing the above problem, the present invention has adopted the following formation of each figure shown in the corresponding example.But, pay the symbol that comprises bracket be added on each key element and only be the illustration of this key element, and non-limiting each key element also.

According to the 1st aspect of the present invention, provide a kind of exposure device (EX), to being formed with film (Rg, Tc) substrate (P) irradiation exposure light (EL) makes this base plate exposure, it is characterized in that possessing: in order to detect film (Rg, Tc) the formation status detection device (60) on the substrate (P).

According to the 1st aspect of the present invention, owing to be provided with in order to detect the formation status detection device of substrate upper film, the disposal that therefore can take to use the testing result of this checkout gear to come the suppression device productivity to reduce.

According to the 2nd aspect of the present invention, provide a kind of exposure device (EX), via liquid LQ) substrate (P) irradiation exposure light (EL) is made substrate (P) exposure, it is characterized in that possessing: checkout gear (40,60 '), the state at detection substrate (P) edge.

According to the 2nd aspect of the present invention, owing to be provided with in order to detect the status detection device of substrate edges, the disposal that therefore can take to use the testing result of this checkout gear to come the suppression device productivity to reduce.

According to the 3rd aspect of the present invention, a kind of exposure device (EX) is provided, and (Rg, substrate Tc) (P) shine exposure light (EL) makes this base plate exposure to being formed with film via liquid (LQ), it is characterized in that possessing: the optical system (IL) that is disposed at the light path of exposure light (EL); And the film (Rg, Tc) checkout gear of defective (40,60 ') that are provided the substrate (P) of this liquid (EL) in order to detection.

According to the 3rd aspect of the present invention, because the film (Rg that is provided the substrate (P) of liquid (LQ) in order to detection is set, therefore Tc) checkout gear of defective can take to use the testing result of this checkout gear to come the suppression device productivity to reduce and the disposal of exposure device fault.

According to the 4th aspect of the present invention, provide a kind of device making method that uses the exposure device (EX) of above-mentioned aspect.According to the 4th aspect of the present invention, can make device with good productivity.

According to the 5th aspect of the present invention, a kind of substrate processing method using same is provided, to be formed with film (Rg, substrate Tc) (P) carries out exposure-processed, it is characterized in that, comprises: the step that substrate (P) is remained in substrate holding structure (4); Via substrate (P) the irradiation exposure light (EL) of liquid (LQ), substrate (P) is carried out the step of exposure-processed to remaining in substrate holding structure (4); Preceding, detect film (Rg, Tc) step of state of substrate (P) to substrate (P) irradiation exposure light (EL).

According to the 5th aspect of the present invention, the result that can take to detect the membrane stage of substrate comes the disposal of the productive reduction of suppression device.

According to the 6th aspect of the present invention, a kind of substrate processing method using same is provided, expose via liquid, it is characterized in that, comprise: film forming step (SA0) on this substrate; Check this film defects step (SA2, SB2, SC3); With liquid be supplied to step on this film (SB4, SC8); Via the liquid of this supply to substrate shine this exposure light step (SA5, SB5, SC9).

According to the 6th aspect of the present invention, because before via liquid substrate (P) being exposed, (fault of taking precautions against exposure device is in possible trouble for Rg, Tc) defective, but therefore suppression device productivity reduction to detect the film that is formed at substrate in advance.

According to the 7th aspect of the present invention, a kind of device making method is provided, it is characterized in that, comprise: use the substrate processing method using same of above-mentioned aspect come to substrate carry out exposure-processed step, make the substrate step of developing of having exposed, the substrate that has developed carried out processing steps.According to the 7th aspect of the present invention, can make device with good productivity.

According to the present invention, can make base plate exposure well, the productive reduction of suppression device, the fault that prevents exposure device is in possible trouble.

Description of drawings

Fig. 1 is the summary pie graph that shows the exposure device of the 1st example.

Fig. 2 is the summary pie graph that shows the exposure device body.

Fig. 3 is the sectional view that shows the substrate example that is formed with film.

Fig. 4 is the summary pie graph that shows the checkout gear of the 1st example.

Fig. 5 is the flow chart in order to the exposure method that the 1st example is described.

Fig. 6 is the flow chart in order to the exposure method that the 2nd example is described.

Fig. 7 is the summary pie graph that shows the checkout gear of the 2nd example.

Fig. 8 is the summary pie graph that shows the checkout gear of the 3rd example.

Fig. 9 is the flow chart in order to the exposure method that the 3rd example is described.

Figure 10 shows that the rim detection system detects the schematic diagram of the situation of substrate edges state.

Figure 11 is the summary pie graph that shows the exposure device of the 3rd example.

Figure 12 is presented to be formed with the figure that liquid soaks the state in zone on the substrate edges.

Figure 13 is the summary pie graph that shows the exposure device of the 4th example.

Figure 14 is the schematic diagram that possesses the action example of the exposure device that a plurality of baseplate carriers are arranged in order to explanation.

Figure 15 is the summary pie graph that shows the exposure device of the 5th example.

Figure 16 is the schematic diagram that shows the checkout gear of the 5th example.

Figure 17 is the flow chart in order to explanation micro element manufacturing process example.

(symbol description)

1 liquid dipping machine structure

4 baseplate carriers

5 the 2nd baseplate carriers

The 4H substrate keeps tool

7 control device

8 storage devices

The accurate detection system in 30 focus positions

31 projection systems

32,62 receiving systems

40 mark detecting systems

50 registers

60 checkout gears

61 projection systems

The EL exposure light

The EX exposure device

The H carrying device

LQ liquid

The P substrate

Rg the 1st film

S exposure device body

SP1 the 1st zone

SP2 the 2nd zone

Tc the 2nd film

The W base material

Embodiment

Below, though with reference to the description of drawings embodiments of the present invention, the present invention is not limited thereto.In addition, below in the explanation, set the XYZ orthogonal coordinate system, and hand over coordinate system that the position relation of each member is described with reference to this XYZ.Again, the prescribed direction in horizontal plane is made as X-direction, will be in horizontal plane be made as Y direction, will be made as Z-direction with the direction (being vertical direction) of X-direction and Y direction quadrature respectively with the direction of X-direction quadrature.Again, will around X-axis, Y-axis, and rotation (inclinations) direction of Z axle be made as θ X, θ Y respectively, reach θ Z direction.

＜the 1 example 〉

The 1st example is described.Fig. 1 is the summary pie graph that shows the exposure device EX of the 1st example.Among Fig. 1, exposure device EX possesses: exposure device body S, shine on substrate P exposure light EL so that substrate P is carried out exposure-processed; Carrying device H, the conveyance substrate P; Control device 7, the action of control exposure device EX integral body; And storage device 8, store various information about exposure-processed.Exposure device body S possesses: mask microscope carrier 3 can keep mask M to move; Baseplate carrier 4, the substrate P that can keep exposure light EL to be shone moves; Lamp optical system IL remains in the mask M of mask microscope carrier 3 with exposure light EL illumination; And projection optical system PL, the pattern image projection of the mask M that exposure light EL is thrown light on is on substrate P.In addition, the substrate of indication is included in the substrate that is coated with sensitization material (photoresist), diaphragm various films such as (top coated films) on the base materials such as semiconductor wafer herein, and mask comprises the graticule that is formed with the device pattern of reduced projection to the substrate.In this example,, also can use reflective mask though use the transmission-type mask to be used as mask again.

Be connected with coating developing device C/D via interface IF on exposure device EX, this coating developing device C/D comprises the developing apparatus that develops in order to the substrate P after film being formed at the applying device on the substrate P and making exposure-processed.As described later, be formed at the film on the substrate P, the film that is called as the top coated film etc. that comprises the film that constitutes by the sensitization material on the base materials such as being formed at semiconductor wafer and cover the film that constitutes by this sensitization material.Carrying device H, the substrate P conveyance before the exposure-processed that can move into via interface IF from coating developing device C/D (applying device) is to the baseplate carrier 4 of exposure device body S.Again, carrying device H, can be with the substrate P after the exposure-processed from exposure device body S via interface IF conveyance to coating developing device C/D (developing apparatus).

Again, exposure device EX, the film that possesses in order to detect on the substrate P forms status detection device 60.Checkout gear 60 is in order to detect the film formation state on the substrate P before the exposure-processed move into from coating developing device C/D (applying device) toward exposure device EX.Checkout gear 60 is located on the conveyance path of carrying device H.

Be provided with register 50 on the conveyance path of carrying device H, it is in order to adjust the temperature of moving into the substrate P to the exposure-processed of exposure device EX from coating developing device C/D.Register 50, the temperature adjustment that possesses in order to keep the substrate P back side keeps tool 51.Checkout gear 60 is located near the register 50.Carrying device H, the temperature adjustment that substrate P can be moved into register 50 keeps tool 51, and can keep tool 51 to take out of substrate P from temperature adjustment.Checkout gear 60 detects the film formation state of being moved into the substrate P of register 50 by carrying device H.Checkout gear 60 has in order to will detect light La and is projected to and is held in the projection system 61 on the substrate P that temperature adjustment keeps tool 51 and can receives receiving system 62 via the detection light La of substrate P.Projection system 61 will detect light La from incline direction and be projected to the substrate P surface.Receiving system 62 can receive and is projected to substrate P surface by projection system 61 and at the detection light La of this surface reflection.

Secondly, with reference to Fig. 2 exposure device body S is described.Lamp optical system IL, the exposure light EL that distributes with the uniform illumination regulation field of illumination on the mask M of throwing light on.As the exposure light EL that penetrates from lamp optical system IL, for example use the bright line (g line, h line, i line) and the KrF excimer laser extreme ultraviolet lights (DUV light) such as (wavelength 248nm) that penetrate from mercury lamp, or ArF excimer laser (wavelength 193nm) and F ₂Laser (wavelength 157nm) equal vacuum ultraviolet light (VUV light) etc.This example uses the ArF excimer laser.

Mask microscope carrier 3, the driving of the mask microscope carrier drive unit 3D by comprising actuator such as linear motor, and can under the state that keeps mask M, be displaced into X-axis, Y-axis and θ Z direction.The positional information of mask microscope carrier 3 (being mask M furthermore) is measured by laser interferometer 3L.Laser interferometer 3L uses the moving lens 3K that is fixedly arranged on the mask microscope carrier 3 to measure the positional information of mask microscope carrier 3.Control device 7 drives mask microscope carrier drive unit 3D according to the measurement result of laser interferometer 3L, with the Position Control of the mask M that remains in mask microscope carrier 3.In addition, moving lens 3K is level crossing not only, also can comprise corner cube (retrodirective reflector), or replaces moving lens 3K is fixedly arranged on the mode of mask microscope carrier 3, and for example use mask microscope carrier 3 end faces (side) is carried out the formed reflecting surface of mirror finish.

Projection optical system PL, with regulation projection multiplying power with the pattern image projection of mask M in substrate P.Projection optical system PL has a plurality of optical elements, and these optical elements keep with lens barrel PK.The projection optical system PL of this example, this projection multiplying power for example is 1/4,1/5 or 1/8 etc. reduction system.In addition, projection optical system PL also can be reduction system, etc. any one of times system and amplification system.Again, projection optical system PL also can not contain the dioptric system of reflective optical devices, do not contain the reflecting system of refraction optical element or comprise refraction optical element and any one of the catadioptric system of reflective optical devices.Again, projection optical system PL also can form any one of inverted image and erect image.

The substrate that baseplate carrier 4 has in order to keep substrate P keeps tool 4H, can on substructure member BP substrate P be remained in substrate and keep tool 4H to move.Substrate keeps tool 4H, is disposed at the recess 4R that is located on the baseplate carrier 4, and the top 4F beyond the baseplate carrier 4 center dant 4R becomes the tabular surface with the substrate P surface roughly high together (with the one side height) that remains in substrate maintenance tool 4H.In addition, remain in substrate and keep between the top 4F of the substrate P surface of tool 4H and baseplate carrier 4 also can the section of having poor.Again, also can only make the part of the top 4F of baseplate carrier 4, for example only make the regulation zone that surrounds substrate P and substrate P surface roughly with high.Further,, in this example, keep tool 4H and baseplate carrier 4 to constitute respectively substrate, keep tool 4H to be fixed in recess 4R substrate by for example vacuum suction etc. though substrate can be kept the part of tool 4H and baseplate carrier 4 to form as one.

Baseplate carrier 4, the driving of the baseplate carrier drive unit 4D by comprising actuator such as linear motor, and can under the state that keeps substrate P, be displaced into X-axis, Y-axis, Z axle, θ X, θ Y, this six degree of freedom direction of θ Z direction.The positional information of baseplate carrier 4 (being substrate P furthermore) is measured by laser interferometer 4L.Laser interferometer 4L uses the moving lens 4K be fixedly arranged on baseplate carrier 4 to measure baseplate carrier 4 in X-axis, Y-axis, and the positional information of θ Z direction.Again, the face positional information on substrate P surface (Z axle, θ X, and the positional information of θ Y direction), detect by focus position standard (focus leveling) detection system 30.The accurate detection system 30 in focus position has in order to will detect light Lb and is projected to and is held in the projection system 31 on the substrate P that substrate keeps tool 4H and can receives receiving system 32 via the detection light Lb of substrate P.Projection system 31 will detect light Lb from incline direction and be projected to the substrate P surface.Receiving system 32 can receive and is projected to substrate P surface by projection system 31 and at the detection light Lb of this surface reflection.Control device 7 is according to the testing result driving substrate microscope carrier drive unit 4D of the accurate detection system 30 of measurement result and focus position of laser interferometer 4L, with the Position Control of the substrate P that remains in baseplate carrier 4.In addition, laser interferometer 4L also can measure baseplate carrier 4 in the position of Z-direction, and the rotation information of θ X, θ Y direction, it in detail for example is disclosed in special table 2001-510577 communique (the corresponding international brochure that discloses No. 1999/28790).Moreover replacement for example also can be used the mode that moving lens 4K is fixedly arranged on baseplate carrier 4 baseplate carrier 4 parts (side etc.) are carried out the formed reflecting surface of mirror finish.Again, the accurate detection system 30 in focus position, by measure the Z-direction positional information of substrate P respectively with its a plurality of measurement points, detect the θ X of substrate P and the inclination information (anglec of rotation) of θ Y direction, in this example, though at least a portion that will these a plurality of measurement points is located at liquid and is soaked in the area L R (or the AR of view field), also all measurement points can be located at liquid and soak the area L R outside.Moreover, for example when laser interferometer 4L can measure the positional information of Z axle, θ X and θ Y direction of substrate P, the accurate detection system 30 in focus position also can be set, and the measurement result of using laser interferometer 4L at least in exposure actions is carried out the Position Control in the substrate P of Z axle, θ X, θ Y direction, thereby can measure the positional information of its Z-direction in the exposure actions of substrate P.At this moment, as an example, the accurate detection system 30 in focus position is located at measuring station described later.

The exposure device EX of this example (exposure device body S) is a liquid immersion exposure apparatus of using immersion method, and it improves resolution and substantially amplify depth of focus in order to substantially to shorten exposure wavelength.Exposure device EX possesses liquid dipping machine structure 1, in order to the optical path space K of exposure light EL in the image planes side that liquid LQ is riddled projection optical system PL, soaks area L R with the liquid that forms liquid LQ on substrate P.Liquid dipping machine structure 1, with liquid LQ be filled in the substrate P that remains in baseplate carrier 4 and be located at and the final optical element FL of the position of this substrate P subtend and the projection optical system PL that exposure light EL is passed through between optical path space K.In this example, only there is in a plurality of optical elements of projection optical system PL final optical element FL contact with the liquid LQ of optical path space K near the image planes of projection optical system PL.

Liquid dipping machine structure 1 possesses: nozzle member 6, be located near the optical path space K, and have the supply opening 12 of optical path space K supply fluid LQ and the recovery mouth 22 of withdrawal liquid LQ; Liquid supplying apparatus 11, via supply pipe 13, and the supply opening 12 of nozzle member 6 come supply fluid LQ; And liquid withdrawal system 21, via the recovery mouth 22 of nozzle member 6, and recovery tube 23 come withdrawal liquid LQ.Nozzle member 6 is annular components of being arranged to surround the final optical element FL of projection optical system PL.In this example, in order to the supply opening 12 of supply fluid LQ and be formed at the following 6A of nozzle member 6 in order to the recovery mouth 22 of withdrawal liquid LQ.The following 6A of nozzle member 6 is with the surperficial subtend of the substrate P that remains in baseplate carrier 4.Again, the stream that is formed with the stream of connection supply opening 12 and supply pipe 13 in nozzle member 6 inside and is connected recovery mouth 22 and recovery tube 23.Supply opening 12 among the 6A, is arranged to surround the final optical element FL (optical path space K) of projection optical system PL respectively at a plurality of assigned positions below nozzle member 6.Again, reclaim mouth 22, among the 6A, final relatively optical element FL is located at supply opening 12 outsides below nozzle member 6, and ring-type is arranged to surround final optical element FL and supply opening 12.In addition, in this example,, for example dispose the net member of titanium system or the porous member of ceramic reclaiming on the mouth 22.The action of liquid supplying apparatus 11 and liquid withdrawal system 21 is by control device 7 controls.Liquid supplying apparatus 11 can be sent clean and through the liquid LQ that temperature is adjusted, and comprises 21 energy withdrawal liquid of liquid withdrawal system LQ of vacuum system etc.In addition, the structure of nozzle member 6 structures such as dipping machine such as liquid such as grade 1 is not limited to above-mentioned structure, for example also can use European patent to disclose No. 1420298 communique, internationally disclose No. 2004/055803 communique, internationally disclose No. 2004/057590 communique, the world and disclose the structure that communique is put down in writing No. 2005/029559.Particularly, in this example, though nozzle member 6 following set lower surface (outgoing plane) with projection optical system PL for roughly with high (Z position), for example also the following 6A of nozzle member 6 can be set for than projection optical system PL lower surface more by image planes side (substrate-side).At this moment, also the part (bottom) of nozzle member 6 can be arranged to be slipped into projection optical system PL (final optical element FL) downside in the mode of not covering exposure light EL.In this example,, for example also supply opening 12 can be arranged at medial surface (inclined plane) with the nozzle member 6 of the side subtend of the final optical element FL of projection optical system PL though 6A is provided with supply opening 12 below nozzle member 6 again.

Exposure device EX (exposure device body S), at least the pattern image with mask M be projected to substrate P during, use liquid dipping machine structure 1 with the optical path space K that liquid LQ is full of exposure light EL, on substrate P, form liquid thus and soak area L R.Exposure device EX will expose on the substrate P by the exposure light EL of mask M with being formed at the liquid LQ that liquid on the substrate P soaks area L R via projection optical system PL, and the pattern image with mask M is projected to substrate P thus.Again, the exposure device EX of this example adopts local liquid to soak mode, it riddles the liquid LQ of optical path space K, and the liquid of liquid LQ that will be bigger than view field AR, littler than substrate P soaks area L R and is formed at part zone on the substrate P of the AR of view field that comprises projection optical system PL partly.Control device 7, control liquid dipping machine structure 1, parallel carry out the liquid supply action of liquid supplying apparatus 11 and the liquids recovery action of liquid withdrawal system 21, be full of optical path space K with liquid LQ thus, it is regional that the liquid of liquid LQ is soaked the part that area L R is formed on the substrate P partly.

In this example, use pure water to be used as liquid LQ.Pure water not only can make the transmission of ArF excimer laser, for example also can make emitted bright line of mercury lamp (g line, h line, i line) and extreme ultraviolet light (DUV light) transmissions such as (wavelength 248nm) of KrF excimer laser.

Fig. 3 shows the figure that is formed with the substrate P example of film by the applying device of coating developing device C/D.Among Fig. 3, substrate P have semiconductor wafer etc. base material W, be formed at the 1st film Rg on this base material W, be formed at the 2nd film Tc on the 1st film Rg.The 1st film Rg is the film that is made of sensitization material (photoresist).The 2nd film Tc is the film that is called as the top coated film, for example has the function etc. of protecting at least one side of the 1st film Rg and base material W from liquid LQ, and liquid LQ is had lyophobicity (hydrophobicity).Again, the 2nd film Tc of the film by being provided as lyophobicity, and the recovery that also can improve liquid LQ.The 1st film Rg for example forms by applying sensitization material (photoresist) in the spin coated mode on base material W.Similarly, the 2nd film Tc also forms by being coated on the substrate P in order to the material that forms the top coated film.The liquid of liquid LQ soaks area L R, is formed on the 2nd film Tc of substrate P, the 2nd film Tc in the substrate P is formed with liquid soak the liquid contact surface that the liquid LQ of area L R contacts.In this example, the contact angle of the liquid LQ when being loaded into liquid LQ on the 2nd film Tc is more than 90 °.In this example, use " TSP-3A " of Tokyo Applied Chemistry Industrial Co., Ltd.'s system as the formation material (lyophobicity material) that forms the 2nd film Tc.

Fig. 4 is the figure that shows checkout gear 60.Checkout gear 60 has in order to will detect light La and is projected to the projection system 61 on the substrate P and can receives receiving system 62 via the detection light La of substrate P, detects the formation state of the 2nd film Tc on the substrate P with optical mode.As mentioned above, the 2nd film Tc forms by being coated on the substrate P in order to the prescribed material that forms the top coated film, and checkout gear 60 then detects the defective of coating state or the 2nd film Tc of the 2nd film Tc.In addition, the term in this specification " defective of film ", not single finger-type is formed in the bad of filminess (coating state) on the substrate P, and also comprises the bad notion of substrate P rim condition described later.

Checkout gear 60 is located on the conveyance path of carrying device H, soaks the formation state that detects the 2nd film Tc before the area L R in order to form liquid on substrate P.That is, checkout gear 60 does not detect the formation state of the 2nd film Tc via liquid LQ.

Control device 7 when using checkout gear 60 to detect the 2nd film Tc on the substrate P to form state, makes and detects light La and substrate P relatively moves and will detect light La simultaneously shines on substrate P.In this example, keep tool 51 to be arranged to be displaced into the XY direction in order to the temperature adjustment that keeps substrate P, control device 7 makes the temperature adjustment that maintains substrate P keep tool 51 to be displaced into the XY direction, and the detection light La from projection system 61 is shone in substrate P.Thus, can the roughly whole district that light La is projeced into the substrate P surface will be detected.In addition, also can make checkout gear 60 keep the substrate P of tool 51 to move relative to remaining in temperature adjustment on one side, will detect light La and shine in substrate P surface on one side, or both move also can to make the temperature adjustment that maintains substrate P keep tool 51 and checkout gear 60.Again, though show among the figure that the detection light La that projection system 61 is throwed is one, projection system 61 also can throw a plurality of detection light La simultaneously to substrate P.At this moment, on receiving system 62, be provided with the sensitive surface of corresponding a plurality of detection light La.

Checkout gear 60 detects the formation state of the 2nd film Tc of the substrate P move into register 50.In this example, checkout gear 60 detects the 2nd film Tc formation state that the temperature adjustment that remains in register 50 keeps tool 51 and imposed the substrate P of temperature adjustment processing.That is, the 2nd film Tc of 60 pairs of substrate P of checkout gear forms the status detection processing, handles parallel carrying out with the temperature adjustment of 50 pairs of substrate P of register.

Secondly, the flowchart text with reference to Fig. 5 uses the exposure device EX with above-mentioned formation to make the method for substrate P exposure.

At first, the applying device by coating developing device C/D forms the 1st film Rg and the 2nd film Tc (SA0) on substrate P.Secondly, be formed with the substrate P of the 1st film Rg and the 2nd film Tc as described above, in order to make its exposure via liquid, and move into exposure device EX from applying device.Substrate P, by conveyance to the baseplate carrier 4 of exposure device body S, executed predetermined processing by the various processing unit beyond the coating developing device C/D.

Control device 7, use carrying device H with the substrate P conveyance to register 50 (step SA1).That is, carrying device H is moving into register 50 with the substrate P conveyance earlier to baseplate carrier 4.The temperature adjustment that substrate P remains in register 50 keeps tool 51.Register 50 is adjusted the substrate P temperature of conveyance to the baseplate carrier 4, particularly keeps the temperature of tool 4H according to the substrate of baseplate carrier 4 and/or forms the temperature that temperature that liquid soaks the liquid LQ of area L R is adjusted substrate P.For example, register 50 can be adjusted to the temperature of substrate P consistent with the temperature of substrate maintenance tool 4H (or liquid LQ).

Control device 7 uses checkout gear 60, detects to move into register 50 and remain in temperature adjustment to keep the 2nd film Tc of the substrate P of tool 51 to form state (step SA2).Checkout gear 60 detects light La from 61 pairs of substrate P surface irradiations of projection system.Control device 7 shines on substrate P while control detection device 60 makes detection light La and substrate P relatively moves, will detect light La.Thus, can detect on the substrate P surface the roughly formation state of the 2nd film Tc of the whole district.Detection light La in the substrate P surface reflection is received by receiving system 62.The light result that is subjected to of receiving system 62 exports control device 7 to.

Herein, storage device 8 stores the relation that is subjected to light state that the 2nd film Tc forms state and receiving system 62 in advance.Control device 7, according to stored information that is stored in storage device 8 and receiving system 62 be subjected to the light result, distinguish whether the formation state of the 2nd film Tc is desirable state (step SA3).

For example, when the 2nd film Tc forms desirable state, shine, will arrive the sensitive surface assigned position of receiving system 62 with the regulation light quantity in the detection light La of substrate P (the 2nd film Tc).On the other hand, when at least a portion of the 2nd film Tc does not form desirable state and when being defective mode, will produce the detection light La that arrives receiving system 62 the desirable relatively state of light quantity situation and change (reductions), arrive the position change of detection light La of receiving system 62 sensitive surfaces or the situation that detection light La does not arrive receiving system 62." the 2nd film Tc is bad " or " having defective in the 2nd film Tc " is included in to have on the substrate P fully and forms (coating) the 2nd film Tc or the zone that forms of part or have not state with the zone of desirable thickness (thickness) formation only.

Receiving system 62 when detecting light La and be projected to the substrate P (the 2nd film Tc) of desirable state be subjected to light state, for example can be by experiment and/or simulation obtain in advance.Therefore, the relevant information of light state that is subjected to by the receiving system 62 with will detect the substrate P (the 2nd film Tc) that light La is projected to desirable state the time is stored in storage device 8 in advance, control device 7 can according to stored information that is stored in storage device 8 and receiving system 62 be subjected to the light result, whether whether the formation state of distinguishing the 2nd film Tc be desirable state, particularly be the perfect condition that is suitable for immersion exposure.

Control device 7 is controlled the action of carrying device H according to the testing result that is subjected to light result (testing result of checkout gear 60) of receiving system 62.Particularly, when in step SA3, when judging that according to the testing result that is subjected to light result (testing result of checkout gear 60) of receiving system 62 the formation state of the 2nd film Tc is desirable state, control device 7, after the temperature of 50 pairs of substrate P of register is adjusted the processing end, use carrying device H with the baseplate carrier 4 (step SA4) of this substrate P conveyance to exposure device body S.Move into the substrate P of baseplate carrier 4, remain in this baseplate carrier 4 (substrate keeps tool 4H).Control device 7 for example imposes the predetermined processing of registration process etc. to the substrate P that remains in baseplate carrier 4, and the liquid that uses liquid dipping machine structure 1 to form liquid LQ on substrate P soaks area L R.Then, control device 7, the immersion exposure (step SA5) of beginning substrate P.

The exposure device EX of this example be while make mask M and substrate P in the scanning direction same moved further, make the pattern image that is formed at mask M be exposed to the scanning exposure apparatus (so-called scanning stepper) of substrate P.Control device 7, use laser interferometer 3L, 4L measures the positional information of mask M (mask microscope carrier 3), substrate P (baseplate carrier 4), while and make mask M move, make successively via liquid LQ a plurality of irradiation area exposures that are set on the substrate P with substrate P relative to exposure light EL.After the exposure-processed of substrate P finished, control device 7 made liquid soak area L R and decorporates from substrate P, and used carrying device H that this substrate P is taken out of (unloading) from baseplate carrier 4, and conveyance is to coating developing device C/D (developing apparatus).

On the other hand, when in step SA3, according to receiving system 62 be subjected to light result (testing result of checkout gear 60) to judge that the formation state of the 2nd film Tc is defective mode the time, control device 7 uses carrying device H with the assigned position (step SA6) of this substrate P conveyance to the baseplate carrier 4.For example, control device 7, when the formation state of judging the 2nd film Tc is defective mode, use carrying device H with this substrate P from register 50 conveyances to coating developing device C/D.Perhaps, control device 7 uses carrying device H that this substrate P is recessed to regulation and recesses the position.The 2nd film Tc is judged as bad substrate P, can be discarded, or also can form film again and utilize once again.

In immersion exposure,, the contact condition (contact angle) of the liquid contact surface of liquid LQ and substrate P can be given optimization between projection optical system PL and substrate P for the liquid that keeps liquid LQ to form desirable state well soaks area L R.That is, in immersion exposure, form film (the 2nd film Tc) on the substrate P according to liquid LQ.When the formation state of the 2nd film Tc is defective mode, might produce bad situation, as liquid LQ being flowed out or can't be via reclaiming mouthfuls 22 withdrawal liquid LQ and make liquid LQ residue on the substrate P or liquid soaks area L R and do not form well and generate gas part etc. in the optical path space K of exposure light EL well.Therefore, be the substrate P of defective mode when moving into baseplate carrier 4 and having carried out immersion exposure with the 2nd film Tc formation state, can produce that liquid LQ flows out and to bad situations such as near the peripheral machines the baseplate carrier 4 cause damage.Particularly, also might produce because of the liquid that flows out and adhere to or infiltrate the state of affairs that peripheral machine causes stopping the running of exposure device.For example, when the bad situation because of coating developing device C/D does not form photoresist film or top coated film on substrate, might produce the above-mentioned state of affairs.When this substrate transferring that does not form film during, the liquid that is supplied on the substrate is stayed on the substrate, and might flow out to outside the substrate to baseplate carrier.That is, on substrate, do not form predetermined film, can when immersion exposure, bring great infringement.Promptly, in the not exposure in the past that exposes via liquid (dry type exposure), as long as will not form the substrate exchange of film become suitably to be formed with the substrate of film and expose once again just enough, though extremely low to the possibility of the influential fault that can cause exposure device itself of production capacity.With respect to this, can know by inventor's experiment and to learn, must be in immersion exposure with the failure prevention of above-mentioned exposure device itself in possible trouble.

Perhaps, the exposure light EL that might soak area L R because of the liquid by defective mode shines on the substrate P or because of the liquid LQ that residues on the substrate P forms washmarking etc. on substrate P, causes the device of manufacturing bad.Make the bad device of this kind, can cause the reduction of device production.This problem also is the distinctive problem of immersion exposure.In this example, when by before substrate P is moved into baseplate carrier 4, detecting the formation state of the 2nd film Tc, and the formation state of the 2nd film Tc is when being defective mode, can take not this substrate P conveyance to baseplate carrier 4 and is for example suitably disposed this substrate P conveyance to coating developing device C/D etc.Again, because this not conveyance of substrate P is to baseplate carrier 4, therefore also can not form liquid on this substrate P soaks area L R.In view of the above, can prevent the generation of above-mentioned bad situation, the suppression device productivity reduces.

As mentioned above, because the film (the 2nd film Tc) that is provided with in order to detect on the substrate P forms status detection device 60, the testing result suppression device productivity that therefore can take to use this checkout gear 60 reduces, with the failure prevention of exposure device in the suitable disposal of possible trouble.

Again, in this example, checkout gear 60, the 2nd film Tc that detects the substrate P of moving into register 50 forms state, makes the 2nd film Tc formation status detection processing of 60 pairs of substrate P of checkout gear and the temperature adjustment of 50 pairs of substrate P of register handle parallel carrying out.Therefore, can promote treatment effeciency.In addition, detect to handle and handle and to carry out simultaneously, also can handle laggard trip temperature adjustment and handle, or after the temperature adjustment is handled, detect processing in detection with the temperature adjustment.

In addition, in this example,, also can be located at the optional position on the conveyance path of carrying device H though checkout gear 60 is located near the register 50.For example, when the prealignment device that roughly is positioned baseplate carrier 4 in order to the substrate P before will being loaded into baseplate carrier 4 is located on the conveyance path of carrying device H, checkout gear 60 can be located near this prealignment device.Again, checkout gear 60, the 2nd film Tc that can detect the substrate P of moving into prealignment device forms state.Again, control device 7, the 2nd film Tc that carries out 60 pairs of substrate P of checkout gear of walking abreast form that status detection is handled and prealignment device to the localization process of substrate P.Certainly, also can near other processing unit beyond register 50 and/or the prealignment device, checkout gear 60 be set, and detect the 2nd film Tc formation state of the substrate P of moving into this processing unit.Perhaps, checkout gear 60, the 2nd film Tc that also can detect the substrate P of the state that remains in carrying device H forms state.Also can be other processing unit (register 50 or prealignment device etc.) with checkout gear 60 dual-purposes again.

In addition, in the 1st example,, also can omit this system though dispose the accurate detection system 30 in focus position that the liquid LQ that soaks area L R via liquid obtains the substrate P surface information, by departing from the measuring station of projection optical system PL, do not obtaining the substrate P surface information under the state via liquid LQ.

＜the 2 example 〉

Secondly, with reference to flowchart text the 2nd example of Fig. 6.The characteristic of this example, the film that is to detect on the substrate P that remains in substrate maintenance tool 4H state forms state.Below in the explanation, give same-sign, simplify or omit its explanation the component part identical or equal with above-mentioned example.

Be formed with the substrate P of the 1st film Rg and the 2nd film Tc by the applying device of coating developing device C/D, in order to carry out moving into exposure device EX via the exposure of liquid.Substrate P, by conveyance to the baseplate carrier 4 of exposure device body S, executed predetermined processing by the various processing unit that comprise register 50.After the processing of the various processing unit by comprising register 50 finishes, control device 7, use carrying device H with the substrate P conveyance to baseplate carrier 4 (substrate keeps tool 4H) (step SB1).

Control device 7 uses the accurate detection system 30 in focus position, detects to move into baseplate carrier 4 and remain in substrate to keep the 2nd film Tc on the substrate P of tool 4H state to form state (step SB2).As shown in Figure 7, control device 7 before formation liquid soaks area L R on substrate P, uses the accurate detection system 30 in focus position to detect the formation state of the 2nd film Tc.The accurate detection system 30 in focus position has and the roughly equal formation of checkout gear 60, can detect the formation state of the 2nd film Tc with optical mode.That is, when the 2nd film Tc forms desirable state, shine in the detection light Lb of substrate P (the 2nd film Tc), can arrive the sensitive surface assigned position of receiving system 32 with the regulation light quantity by projection system 31.On the other hand, when at least a portion of the 2nd film Tc is defective mode, can produce the detection light Lb that arrives receiving system 32 the desirable relatively state of light quantity situation and change the situations such as position change of the detection light Lb of (reductions) or arrival receiving system 32 sensitive surfaces.Control device 7 in order to detect the formation state of the 2nd film Tc on the substrate P, shines on substrate P while make detection light Lb that projection system 31 throwed and the substrate P on the baseplate carrier 4 relatively move, will detect light Lb.

With above-mentioned the 1st example similarly, in storage device 8, store the relation that is subjected to light state of formation state and the receiving system 32 of the 2nd film Tc in advance.Control device 7, according to stored information that is stored in storage device 8 and receiving system 32 be subjected to the light result, distinguish whether the formation state of the 2nd film Tc is desirable state (step SB3).

When in step SB3, according to receiving system 32 be subjected to light result (testing result of the accurate detection system 30 in focus position) to judge that the formation state of the 2nd film Tc is desirable state the time, control device 7, keep the substrate P of tool 4H for example to impose the predetermined processing of registration process etc. to remaining in substrate, and using liquid dipping machine structure 1 to soak area L R (step SB4) remaining in the liquid that substrate keeps forming liquid LQ on the substrate P of tool 4H.Then, control device 7 carries out the immersion exposure (step SB5) of substrate P.

When carrying out the immersion exposure of substrate P, control device 7, the face positional information according to the detected substrate P of the accurate detection system in focus position 30 makes the substrate P exposure while adjust the position of substrate P.The accurate detection system 30 in the focus position of this example is soaked the area L R outside with detecting the liquid that light Lb is projected in the substrate P surface, detects the face positional information of substrate P under the state via liquid LQ not.In addition, the accurate detection system 30 in focus position also can detect the face positional information of substrate P via liquid LQ.

After the exposure-processed of substrate P finished, control device 7 use carrying device H that this substrate P is taken out of (unloading) from baseplate carrier 4, and conveyance was to coating developing device C/D (developing apparatus).

On the other hand, when in step SB3, according to receiving system 32 be subjected to light result (testing result of the accurate detection system 30 in focus position) to judge that the formation state of the 2nd film Tc is defective mode the time, control device 7, use carrying device H that this substrate P is taken out of (unloading) from baseplate carrier 4, and conveyance is to assigned position (step SB6).For example, control device 7, when the formation state of judging the 2nd film Tc is defective mode, use carrying device H with this substrate P from baseplate carrier 4 conveyances to coating developing device C/D.Perhaps, control device 7 uses carrying device H that this substrate P is recessed to regulation and recesses the position.

In addition, in this example, though be formed at substrate P and go forward liquid being soaked area L R, do not detect the formation state of the 2nd film Tc via liquid LQ, but also can after liquid being soaked area L R and being formed on the substrate P, use the accurate detection system 30 in focus position to detect the formation state of the 2nd film Tc via liquid LQ.Because of liquid LQ flows out from substrate exposure device brought dysgenic viewpoint from prevention, to be preferably in substrate is moved into the formation state that detects the 2nd film Tc before the baseplate carrier 4.

Again, in the 2nd example, also checkout gear 60 can be set, or also can be behind the film formation state of checking on the substrate P with checkout gear 60, the film of examining again on the substrate P of moving into baseplate carrier 4 forms state.

In addition, in above-mentioned each example, though according to shining the formation state that detects film in the detection reflection of light light on substrate P surface, but for example also can use and open the determining film thickness device that the 2002-141274 communique is disclosed as the spy, it possesses the light interference type film thickness gauge, can obtain catoptrical spectrum to the face irradiates light that is formed with film of substrate P, and go out thickness (film thickness distribution) according to this spectroscopic assay.Control device 7 can distinguish that the film on the substrate P forms whether state is desirable state according to the measurement result of this determining film thickness device.

For the film that detects on the substrate P forms state, also can after scattering liquid (drop) on the substrate P surface, observe the liquid condition that intersperses among this substrate P surface with cameras such as CCD again.The film formation state on the substrate P of being formed at is in the situation of the situation of desirable state and defective mode, because interspersing among the liquid condition (the formation state of liquid film etc.) on substrate P surface can be different, so control device 7, can carry out image processing to the photography result of camera, and the film that detects on the substrate P according to this result forms state.

＜the 3 example 〉

Secondly, the 3rd example is described.As mentioned above, can not obtain the surface information (face positional information) of substrate P under the state via liquid LQ yet, and can will be located at measuring station in order to the accurate detection system in focus position that obtains this substrate P surface information with the measuring station that departs from projection optical system PL.Again, the film that can use the accurate detection system in focus position of being located at this measuring station to detect on the substrate P forms state.In this example, illustrate and use the accurate detection system in focus position be located at this measuring station to detect film on the substrate P example when forming state.Below in the explanation, give same-sign, simplify or omit its explanation the component part identical or equal with above-mentioned example.

Again, the exposure device EX of this example is at the mark detecting system 40 that possesses on the measuring station in order to detect the alignment mark on the substrate P.The mark detecting system 40 of this example can detect the state at substrate P edge.In this example, mark detecting system 40 before the liquid with liquid LQ soaks area L R and is formed at least a portion on the substrate P, detects the alignment mark on the substrate P that remains in baseplate carrier 4 and the state at substrate P edge.

Fig. 8 is the summary pie graph that shows the exposure device EX of the 3rd example.Among Fig. 8, exposure device EX possesses and uses so that the exposure station ST1 of substrate P exposure; And be located at the position of departing from projection optical system PL, in order to the measuring station ST2 of the exchange of carrying out specifying measurement and substrate P.On exposure station ST1, be provided with projection optical system PL and nozzle member 6 etc., on measuring station ST2, be provided with accurate detection system 30 in focus position and mark detecting system 40 etc.Baseplate carrier 4, can comprise can by from the 1st region S P1 of the exposure light EL irradiation of the projection optical system PL of exposure station ST1 with can be by detection system 30 from measuring station ST2,40 detection light Lb, in the regulation zone on the substructure member BP of the 2nd region S P2 of Lc irradiation, keep substrate P to move.The 1st region S P1 comprises the position that the exposure light EL under the projection optical system PL can shine, and the 2nd region S P2 comprises the detection light Lb under the detection system 30,40, the position that Lc can shine.The 1st region S P1 and the 2nd region S P2 are difference region.In addition, the part of the 1st region S P1 and the 2nd region S P2 also can repeat.Baseplate carrier 4 can remain in substrate P the position that the exposure light EL of exposure station ST1 can shine, and substrate P can be remained in the detection light Lb of measuring station ST2, the position that Lc can shine.Fig. 8 display base plate microscope carrier 4 is disposed at the state of measuring station ST2.Again, also can be in exposure station ST1 and measuring station ST2, make the actuator (linear motor etc.) of driving substrate microscope carrier 4 and/or laser interferometer etc. different.

As shown in Figure 8, near measuring station ST2, be provided with carrying device H in order to the exchange of carrying out substrate P again.Control device 7, can carry out the substrate exchange operation, promptly use carrying device H to come to have finished the substrate P of exposure-processed, should carry out the substrate P of exposure-processed again and load (moving into) in the operation of baseplate carrier 4 from baseplate carrier 4 unloadings (taking out of) of substrate exchange position (" loaded " position) RP that moves to measuring station ST2.In addition, in this example,, also can load and unload in different position though the loading of substrate P and unloading are carried out at same position (substrate exchange position) RP.

With above-mentioned example similarly, the accurate detection system 30 in focus position has in order to will detect light Lb and is projected to the projection system 31 on the substrate P that is held in baseplate carrier 4 and can receives receiving system 32 via the detection light Lb of substrate P.Projection system 31 will detect light Lb from incline direction and be projected to the substrate P surface that remains in the baseplate carrier 4 that is disposed at measuring station ST2.Receiving system 32 can receive and is projected to substrate P surface by projection system 31 and at the detection light Lb of this surface reflection.The accurate detection system 30 in focus position detects the face positional information (in the face positional information of Z axle, θ X, θ Y direction) on the substrate P surface that remains in baseplate carrier 4 at the measuring station ST2 that separates with projection optical system PL.

Mark detecting system 40 is the Optical devices that comprise in order to the alignment information (positional information of the X of a plurality of irradiation areas on the substrate P, Y, θ Z direction) that obtains the substrate P that remains in baseplate carrier 4, can detect the alignment system that is formed at the alignment mark on the substrate P.Again, mark detecting system 40 can detect the state at substrate P edge.Mark detecting system 40 comprises: irradiation unit, will shine in object with the different detection light Lc of exposure light EL; And camera, in order to obtain the optical image (image) of the object that is thrown light on by detection light Lc from this irradiation unit.Mark detecting system 40 will detect light Lc and shine in substrate P, to obtain the image of the mark on the substrate P.Mark detecting system 40 can be to detect light Lc illuminating board P edge, to obtain by the image at the substrate P edge of this detection light Lc illumination.The testing result of mark detecting system 40 exports control device 7 to.

The mark detecting system 40 of this example, be for example to open flat 4-65603 communique (corresponding United States Patent (USP) the 5th as the spy, 493, No. 403) etc. the alignment system of FIA (Field ImageAlignment) mode that disclosed, it will not make the sensitization of sensitization material and the detection light Lc different wavelength of exposure light EL on the substrate P shine in object tag (being formed at the alignment mark of substrate P etc.), use camera (CCD etc.) take by the reverberation from this object tag image in sensitive surface detected object marker image and index (being located at the index on the index board in the mark detecting system 40) as, carry out the position that image processing is come measurement markers by signals that these are photographed again.The index of mark detecting system 40 is defined in the detection reference position of the mark detecting system 40 in the coordinate system of defined among the laser interferometer 4L.Mark detecting system 40, the picture that can be by detecting the detected object mark and the position relation (offset) of index, the position that detects detected object mark and detection reference position in the coordinate system of defined in mark detecting system 40 concerns (offset).

Secondly, with reference to the action example of the exposure device EX of this example of flowchart text of Fig. 9.In this example, control device 7, in measuring station ST2, after answering the substrate P of exposure-processed to be loaded into baseplate carrier 4 next one, with above-mentioned example similarly, the film that uses the accurate detection system 30 in focus position to detect on the substrate P that remains in the baseplate carrier 4 that is present in this measuring station ST2 forms state.Again, control device 7 usage flag detection systems 40 detect the state at the substrate P edge that remains in the baseplate carrier 4 that is present in measuring station ST2.Again, control device 7 uses accurate detection system 30 in focus position and mark detecting systems 40, obtains the positional information of the substrate P that remains in the baseplate carrier 4 that is present in measuring station ST2 under the state via liquid LQ not.Herein, the positional information of substrate P comprises the face positional information (positional information of Z, θ X, θ Y direction) of substrate P of regulation datum levels such as relative projection optical system PL image planes and the substrate P alignment information (positional information of the X of a plurality of irradiation areas on the substrate P, Y, θ Z direction) to the stipulated standard position.

Below in the explanation, the state that is not full of optical path space K with liquid LQ suitably is called drying regime, the state that liquid LQ is full of optical path space K suitably is called moisture state.Again, the image planes that will form via projection optical system PL and liquid LQ suitably are called the image planes that form with moisture state.

Control device 7 begins to carry out the exchange and the specifying measurement processing of substrate P in measuring station ST2.For example, control device 7 is disposed at the substrate exchange position RP of measuring station ST2 with baseplate carrier 4, and the substrate P of using carrying device H should carry out exposure-processed is loaded into this baseplate carrier 4.In measuring station ST2, baseplate carrier 4 keeps substrate P (step SC1).

After keeping substrate P with baseplate carrier 4, control device 7, in measuring station ST2, the 2nd film Tc that uses the accurate detection system 30 in focus position to detect on the substrate P of the state that remains in baseplate carrier 4 forms state (step SC2).As shown in Figure 8, measuring station ST2, be arranged on baseplate carrier 4 top not with the position of projection optical system PL (nozzle member 6) subtend, control device 7, before liquid being soaked area L R and being formed at least a portion on the substrate P, use the accurate detection system 30 in focus position to detect the formation state of the 2nd film Tc.As above-mentioned the 2nd example is illustrated, when the 2nd film Tc forms desirable state, projection system 31 by the accurate detection system 30 in focus position shines in the detection light Lb of substrate P (the 2nd film Tc), arrives the sensitive surface assigned position of receiving system 32 with the regulation light quantity.On the other hand, when at least a portion of the 2nd film Tc is defective mode, can produce the detection light Lb that arrives receiving system 32 the desirable relatively state of light quantity situation and change the situations such as position change of the detection light Lb of (reductions) or arrival receiving system 32 sensitive surfaces.Control device 7 in order to detect the formation state of the 2nd film Tc on the substrate P, shines on substrate P while make detection light Lb that projection system 31 throwed and the substrate P on the baseplate carrier 4 relatively move, will detect light Lb.

With above-mentioned example similarly, in storage device 8, store the relation that is subjected to light state of formation state and the receiving system 32 of the 2nd film Tc in advance.Control device 7, according to stored information that is stored in storage device 8 and receiving system 32 be subjected to the light result, distinguish whether the formation state of the 2nd film Tc is desirable state (step SC3).

When in step SC3, when judging that according to the testing result of the accurate detection system 30 in focus position the formation state of the 2nd film Tc is defective mode, control device 7 use carrying device H that this substrate P is taken out of (unloading) from baseplate carrier 4, and conveyance is to assigned position (step SC10).For example, control device 7, when the formation state of judging the 2nd film Tc is defective mode, use carrying device H with this substrate P from baseplate carrier 4 conveyances to coating developing device C/D.Perhaps, control device 7 uses carrying device H that this substrate P is recessed to regulation and recesses the position.

When in step SC3 according to receiving system 32 be subjected to light result (testing result of the accurate detection system 30 in focus position) to judge that the formation state of the 2nd film Tc is desirable state the time, control device 7, usage flag detection system 40 detect the state (step SC4) at the substrate P edge of the state that remains in baseplate carrier 4.Mark detecting system 40 after substrate P remains in baseplate carrier 4, detects the state at the substrate P edge that remains in baseplate carrier 4 at the 2nd region S P2 that measures microscope carrier ST2.

Figure 10 is the schematic diagram that show tags detection system 40 detects the state at substrate P edge.Control device 7, in measuring station ST2, Yi Bian make baseplate carrier 4 be displaced into the XY direction, Yi Bian will remain in the surveyed area that the substrate P edge of baseplate carrier 4 is disposed at mark detecting system 40.As mentioned above, mark detecting system 40 comprises camera, in order to the optical image (image) at the substrate P edge of obtaining the surveyed area that is disposed at mark detecting system 40.Again, control device 7 Yi Bian baseplate carrier 4 is moved, makes the substrate P edge move relative to the surveyed area of mark detecting system 40, Yi Bian carry out the detection of mark detecting system 40, in this example, detects the substrate P edge whole district with mark detecting system 40.The testing result of mark detecting system 40 (photography result) exports control device 7 to.Control device 7 according to the testing result of mark detecting system 40, distinguishes whether the state at substrate P edge is desirable state (step SC5).

The film that the state at substrate P edge comprises the substrate P edge forms state.In this example, the state at substrate P edge comprises at least one side's of the 1st film Rg at substrate P edge and the 2nd film Tc formation state.As mentioned above, the 1st film Rg for example forms by applying sensitization material (photoresist) in the spin coated mode on base material W, and the 2nd film Tc also forms in order to the material that forms the top coated film by coating on substrate P.In this example, mark detecting system 40 detects at least one side's of the 1st film Rg at substrate P edge and the 2nd film Tc coating state (thickness of the peeling off of the having or not of film, film, film etc.).

Again, the state at substrate P edge also comprises the state (attachment state) that the substrate P edge has or not foreign matter.That is, mark detecting system 40 also detects at the substrate P edge whether have foreign matter.

In this example, in storage device 8, store the image information of the perfect condition at substrate P edge in advance.Control device 7, the result that usage flag detection system 40 is detected behind (shooting) substrate P edge carries out for example image processing, again the image information of the result of this image processing and the perfect condition at the substrate P edge that is stored in storage device 8 relatively.Control device 7 according to its comparative result, distinguishes whether the state that detects the substrate P edge of (shooting) with mark detecting system 40 is desirable state.

In step SC5, when judging that according to the testing result of mark detecting system 40 state at substrate P edge is defective mode, control device 7, do not begin the exposure of this substrate P, and use carrying device H that this substrate P is taken out of (unloading) from baseplate carrier 4, conveyance is to assigned position (step SC10).For example, control device 7 when the state of judging the substrate P edge is defective mode, uses carrying device H, with this substrate P from baseplate carrier 4 conveyances to coating developing device C/D.Perhaps, control device 7 uses carrying device H that this substrate P is recessed to regulation and recesses the position.Herein, the state at so-called substrate P edge is a defective mode, at least one of state that at least one that comprises the 1st film Rg and the 2nd film Tc is not coated on the state at substrate P edge well and foreign matter is arranged at the substrate P marginal existence.

When in step SC5, according to the testing result of mark detecting system 40, when the state of judging the substrate P edge was desirable state, control device 7 began to obtain the action of the positional information of the substrate P that remains in baseplate carrier 4.

Control device 7, in measuring station ST2, on one side maintain the X-direction of baseplate carrier 4 of substrate P and the positional information of Y direction with laser interferometer 4L measurements, one side usage flag detection system 40 do not detecting a plurality of alignment marks (step SC6) corresponding on the substrate P under the state via liquid with a plurality of irradiation areas.Thus, control device 7 can be obtained in the coordinate system of being stipulated by laser interferometer 4L each alignment mark in the positional information of X-direction and Y direction.Control device 7 can be obtained the co-ordinate position information (arrangement information) of a plurality of irradiation areas on the substrate P according to this positional information.In this example, owing to the surveyed area of measurement markers detection system 40 in advance, with the position relation of the projected position of the pattern image that forms via projection optical system PL and liquid LQ, and be stored in storage device 8, therefore when making each irradiation area exposure, can make according to the co-ordinate position information of each irradiation area each irradiation area on the substrate P and pattern image successively with aligned in position in desirable state.

Again, control device 7 in measuring station ST2, uses the accurate detection system 30 in focus position in the face positional information (step SC7) that does not go out to remain in the substrate P surface of baseplate carrier 4 via the state-detection of liquid LQ.

In this example, control device 7, on one side the moving of control basal plate microscope carrier 4, the baseplate carrier 4 that maintains substrate P is moved in the XY plane, use the accurate detection system 30 in focus position to detect face position on one side at a plurality of test points on substrate P surface.For example, control device 7, Yi Bian monitor the output of laser interferometer 4L, Yi Bian moving substrate microscope carrier 4 uses the accurate detection system 30 in focus position to detect the face positional information of a plurality of points on (in the XY plane) in the face of substrate P surface.Thus, control device 7 can be obtained the face positional information of a plurality of test points on the substrate P surface in coordinate system.The testing result of the accurate detection system 30 in focus position, corresponding with the position of substrate P in the XY plane, be stored in storage device 8.Owing to obtaining the position relation of using the detected face positional information of the accurate detection system in focus position 30 and the image planes that form via projection optical system PL and liquid LQ in advance, therefore when making each irradiation area exposure, according to obtaining, use 30 detected positional informations of the accurate detection system in focus position among the step SC7, can make via projection optical system PL and liquid LQ and the image planes that form become desirable state with the substrate P surface with aligned in position.

In the 2nd region S P2 of measuring station ST2, finish to comprise that film on 30 pairs of substrate P of the accurate detection system in focus position forms the detection of status detection, 40 pairs of substrate P rim conditions of mark detecting system, after each of positional information etc. that obtain the substrate P that comprises alignment information and face positional information with the accurate detection system 30 of mark detecting system 40 and focus position handle, control device 7 moves to baseplate carrier 4 the 1st region S P1 of the exposure station ST1 that exposure light EL can shine.

Control device 7 after the baseplate carrier 4 that will maintain substrate P moves to exposure station ST1 from measuring station ST2, uses liquid dipping machine structure 1, and liquid is soaked the baseplate carrier 4 (substrate P) last (step SC8) that area L R is formed at the 1st region S P1 that is configured in this exposure station ST1.Then, control device 7, face positional information control basal plate microscope carrier 4 according to the substrate P surface of obtaining among the step SC7, adjust the position of substrate P surface (plane of exposure), while is according to the co-ordinate position information (arrangement information) of each irradiation area on the substrate P of obtaining among the step SC6, the position of the X-direction of control basal plate P, Y direction, θ Z direction makes a plurality of irradiation area exposures (step SC9) on the substrate P successively in exposure station ST1.Baseplate carrier 4, can in the 1st region S P1 of exposure station ST1, substrate P be remained in the position that exposure light EL can shine, control device 7, using liquid dipping machine structure 1 that liquid is soaked area L R is formed on the substrate P of the baseplate carrier 4 that remains on the 1st region S P1 that is disposed at exposure station ST1, and in the 1st region S P1, via projection optical system PL and liquid LQ exposure light EL is shone in the substrate P that remains on baseplate carrier 4, so that the substrate P exposure.Figure 11 configurations shown is in the baseplate carrier 4 of the state of exposure station ST1.

After the immersion exposure processing of the substrate P on the baseplate carrier 4 finished, control device 7 moved to measuring station ST2 with the baseplate carrier 4 of exposure station ST1.Control device 7 uses carrying device H, and the substrate P that finishes exposure-processed that remains on the baseplate carrier 4 that moves to measuring station ST2 is unloaded.

As described above, in this example, because before also the liquid of the formation of at least a portion on substrate P liquid LQ soaks area L R, detect the formation state of the film (the 2nd film Tc) on the substrate P, therefore when the formation state of film is defective mode, can takes this substrate P not to be disposed at the 1st region S P1 of exposure station ST1 and for example this substrate P conveyance is suitably disposed to coating developing device C/D etc.Again, because this substrate P is not disposed at exposure station ST1, therefore also can not form liquid on this substrate P soaks area L R.In view of the above, can with above-mentioned example similarly, bad situation produces the productive reduction of suppression device to prevent that liquid LQ from flowing out etc.

In this example, before the liquid of at least a portion formation liquid LQ on substrate P soaks area L R, detect the state at substrate P edge again.When in the substrate P edge, for example at least one a part of the 1st film Rg and the 2nd film Tc when base material W peels off, the part of the film that this is peeled off might become foreign matter and be attached to (irradiation area on the substrate) on the substrate, or sneaks in immersion exposure among the liquid LQ.Again, if be that this point of defective mode is ignored to the substrate P edge, when shown in the schematic diagram of Figure 12, on the substrate P edge, forming liquid like that and soaking area L R, for example also might be in immersion exposure, the part of the film at substrate P edge is peeled off and is sneaked among the liquid LQ.When remaining on that the substrate P edge is attached with the state of foreign matter and when carrying out immersion exposure, for example also might this foreign matter be attached to the irradiation area on the substrate, or foreign matter is sneaked into liquid and is soaked among the liquid LQ of area L R.When under having the state of foreign matter, substrate being exposed, might produce bad situations such as producing defective in the pattern that is formed on the substrate, cause the device of manufacturing bad.Make this bad device and can cause the device production reduction.Again, when under having the state of foreign matter, substrate P being carried out immersion exposure, foreign matter among the liquid LQ, can be attached to liquid and soak the part of member that the liquid LQ of area L R contacts, for example nozzle member 6, baseplate carrier 4 or final optical element FL etc., and might bring influence exposure thereafter.Again, in the edge of substrate P, also might the 1st film Rg and at least one the coating state of the 2nd film Tc be bad.For example, if to the coating state as the 2nd film Tc of lyophobicity film in the substrate P edge is that this point of defective mode is ignored, when formation liquid soaks area L R on the substrate P edge like that shown in the schematic diagram of Figure 12, for example coating state is that the edge of bad the 2nd film Tc is peeled off, or the 1st film Rg of the 2nd film Tc lower floor contacts with liquid LQ and produces peeling off of the 1st film Rg, or the constitute of the 1st film Rg (PAG, delustering agent (Quencher) etc.) is dissolved out and produce vaporific on the liquid contact surface of final optical element FL.Again, liquid LQ also might invade above the substrate P and the gap between the top 4F of baseplate carrier 4, and then this liquid LQ might invade the rear side of substrate P.When liquid LQ invades the rear side of substrate P, for example might soak substrate and keep tool 4H, make it can not successfully keep substrate P maybe can't keep tool 4H successfully to unload substrate P from substrate.Also might wettingly be contacted with the carrying device H at the substrate P back side again.Particularly, in case produce leak of liquid, then occur to end the situation of the running of exposure device, and not only make production capacity reduce the fault that also causes exposure device itself.That is, the problem that produces because of this leak of liquid is the distinctive problem of liquid immersion exposure apparatus.

In this example, the liquid that forms liquid LQ by at least a portion on substrate P soaks the state that detects the substrate P edge before the area L R, and when rim condition when being bad, can take this substrate P not to be disposed at the 1st region S P1 of exposure station ST1 and for example this substrate P conveyance is suitably disposed to coating developing device C/D etc.Again, because this substrate P is not disposed at exposure station ST1, therefore also can not form liquid on this substrate P soaks area L R.In view of the above, can prevent the generation of above-mentioned bad situation, the suppression device productivity reduces.

＜the 4 example 〉

Next illustrates the 4th example.The 4th example is the variation of above-mentioned the 3rd example, and the different characteristic of the exposure device EX of the 4th example and the 3rd example is to possess a plurality of baseplate carrier this point that can move independently from one another in the regulation zone on substructure member BP.Below in the explanation, give same-sign, simplify or omit its explanation the component part identical or equal with above-mentioned example.

Figure 13 is the summary pie graph that shows the exposure device EX of the 4th example.The exposure device EX of this example, for example the spy opens flat 10-163099 communique, Te Kaiping 10-214783 communique (corresponding United States Patent (USP) 6,341,007,6,400,441,6,549,269, and 6,590,634), special table 2000-505958 communique (corresponding United States Patent (USP) 5,969,441), special table 2000-511704 communique, the spy opens the 2000-323404 communique, special table 2001-513267 communique, the spy open 2002-158168 communique etc. disclose, be to possess overloading platform (two microscope carrier) the type exposure device that can keep a plurality of baseplate carriers that substrate moves.Under the situation that internal law allowed of designated state and selected state, the disclosure of quoting above-mentioned United States Patent (USP) is as a part described herein.

Among Figure 13, the exposure device EX in this example possesses two baseplate carriers 4,5 that can keep substrate P to move.With above-mentioned the 3rd example similarly, the exposure device EX of this example, also possess the exposure station ST1 that comprises the 1st region S P1 that the exposure light EL from projection optical system PL can shine and comprise from detecting light 30, the measuring station ST2 of the 2nd region S P2 that 40 detection light Lb, Lc can shine.The 1st baseplate carrier 4, can keep also moving in the regulation zone of substrate P on the substructure member BP of the 2nd region S P2 of the 1st region S P1 that comprises exposure station ST1 and measuring station ST2, the 2nd baseplate carrier 5, can with the 1st baseplate carrier 4 independently, keep in the regulation zone of substrate P on the substructure member BP that comprises the 1st region S P1 and the 2nd region S P2 and move.In this example, the 1st baseplate carrier 4 and the 2nd baseplate carrier 5 have roughly equal formation.

In this example, for example, when the 1st baseplate carrier 4 was disposed at the 2nd region S P2 of measuring station ST2, the 2nd baseplate carrier 5 was disposed at the 1st region S P1 of exposure station ST1.

Again, in this example, with in the 1st region S P1 of exposure station ST1, remain in the 2nd baseplate carrier 5 substrate P exposure at least a portion concurrently, in the 2nd region S P2 of measuring station ST2, carry out the detection of the accurate detection system 30 in use focus position and the detection of usage flag detection system 40.With above-mentioned example similarly, use the detection of accurate detection system 30 in focus position and mark detecting system 40 among the measuring station ST2, comprise at least one side's the detection of the membrane stage of substrate P and substrate P rim condition and the detection of substrate P positional information.That is, use the detection of the accurate detection system 30 in focus position among the measuring station ST2, comprise at least one side of detection that film on the substrate P forms the face positional information (in the positional information of Z axle, θ X, θ Y direction) on status detection and substrate P surface.Again, the detection of usage flag detection system 40 among the measuring station ST2 comprises the detection of the detection of substrate P rim condition and the alignment information of substrate P (positional information of the X of a plurality of irradiation areas on the substrate P, Y, θ Z direction).

For example, control device 7 is disposed at the substrate exchange position RP of measuring station ST2 with the 1st baseplate carrier 4, and uses carrying device H will answer the substrate P of exposure-processed to be loaded into the 1st baseplate carrier 4.Then, control device 7 in measuring station ST2, similarly begins and the relevant processing of substrate P that remains in the 1st baseplate carrier 4 with the 3rd example.On the other hand, parallel with processing at measuring station ST2, in exposure station ST1, begin the exposure that remains in the 2nd baseplate carrier 5, measured the substrate P of handling in measuring station ST2 end.

When the processing among processing among the exposure station ST1 and the measuring station ST2 finished respectively, control device 7 moved to measuring station ST2 with the 2nd baseplate carrier 5, and the 1st baseplate carrier 4 is moved to exposure station ST1.In addition, in this example, when the 2nd baseplate carrier 5 is moved to measuring station ST2, and when the 1st baseplate carrier 4 is moved to exposure station ST1, control device 7 soaks under the state of area L R at the lasting liquid that forms, and this liquid is soaked area L R move to the 1st baseplate carrier 4 from the 2nd baseplate carrier 5.For example, shown in the schematic diagram of Figure 14, control device 7, in the regulation zone of the position that comprises subtend below final optical element FL (projection optical system PL just under position), top 4F and the closer to each other or state of contact of top 5F of measuring microscope carrier 5 with baseplate carrier 4, baseplate carrier 4 is moved in the XY plane with measuring microscope carrier 5, make thus the liquid that forms with liquid dipping machine structure 1 soak area L R can be on baseplate carrier 4 4F with measure microscope carrier 5 above mobile between 5F.

Then, control device 7 after the 2nd baseplate carrier 5 that will maintain the substrate P that has finished exposure-processed moves to measuring station ST2, uses carrying device H that the substrate P on the 2nd baseplate carrier 5 is unloaded.Then, answer the substrate P of exposure-processed to be loaded into the 2nd baseplate carrier 5 of measuring station ST2 the next one, use the measurement of accurate detection system 30 in focus position and mark detecting system 40 to handle as mentioned above like that.

On the other hand, control device 7 will maintain after the 1st baseplate carrier 4 that measuring station ST2 measures the substrate P of processing moves to exposure station ST1, in this exposure station ST1, with above-mentioned the 3rd example similarly, the substrate P that remains in the 1st baseplate carrier 4 is carried out immersion exposure.

After the immersion exposure processing to the substrate P on the 1st baseplate carrier 4 finishes, control device 7, the 1st baseplate carrier 4 of exposure station ST1 is moved to measuring station ST2, and will maintain the 2nd baseplate carrier 5 that finishes to measure the substrate P of handling at measuring station ST2 and move to exposure station ST1.

By this way, with the 1st baseplate carrier 4 and the 2nd baseplate carrier 5 mutual input exposure station ST1, a plurality of substrate P are exposed successively.

As mentioned above, in this example, because before also the liquid of the formation of at least a portion on substrate P liquid LQ soaks area L R, detect at least one side of the state at the formation state of the film on the substrate P and substrate P edge, therefore when at least one side of the state at the formation state of film and edge is defective mode, can take this substrate P not to be disposed at exposure station ST1 the 1st region S P1 and for example with this substrate P conveyance to suitably disposal such as coating developing device C/D.Again, because this substrate P is not disposed at exposure station ST1, therefore also can not form liquid on this substrate P soaks area L R.In view of the above, can with above-mentioned example similarly, the productive reduction of suppression device.

In addition, in above-mentioned the 3rd, the 4th example, also can use the accurate detection system 30 in focus position to detect the state at substrate P edge.Again, the formation state that also can usage flag detection system 40 detects the substrate P upper film.Also any one of the accurate detection system in focus position 30 and mark detecting system 40 can be located at exposure station ST1 again.

Again, in above-mentioned the 3rd, the 4th example, though the accurate detection system 30 in focus position also can be used to detect the formation state (and/or rim condition of substrate P) of substrate P film, mark detecting system 40 also can be used to detect rim condition (and/or the film of substrate P form state), but also can be located at measuring station ST2 in addition with being exclusively used in the detection system that the film that detects substrate P forms the rim condition of state and/or substrate P.

In above-mentioned the 3rd, the 4th example,, also can carry out the either party among both though carry out the detection that the substrate P film forms status detection and substrate P rim condition again.

Again, in above-mentioned the 1st example, also available checkout gear 60 detects the state at substrate P edge.In above-mentioned the 1st example, also can remain in the checkout gear that temperature adjustment keeps the substrate P rim condition of tool 51 with independent respectively setting of checkout gear 60 in order to detection again.At this moment, the checkout gear of substrate P rim condition for example also can make the formation as the mark detecting system 40 of above-mentioned the 3rd, 4 examples.In above-mentioned the 1st example, also can only detect the rim condition of substrate P again.

In above-mentioned the 2nd example, also can use the accurate detection system 30 in focus position to detect the rim condition of substrate P again.At this moment, also can carry out the formation status detection of substrate P film and the detection of substrate P rim condition, also can only carry out among both any one.

＜the 5 example 〉

Secondly, the 5th example is described.The characteristic of this example is the rim condition this point that detects this substrate P before substrate P remains in baseplate carrier 4.Below in the explanation, give same-sign, simplify or omit its explanation the component part identical or equal with above-mentioned example.

Figure 15 is the summary pie graph that shows the exposure device EX of the 5th example.Among Figure 15, exposure device EX possesses in order to detect the checkout gear 60 ' of substrate P rim condition.Checkout gear 60 ' detects from coating developing device C/D (applying device) and moves into exposure device EX, remains in the rim condition of the substrate P before the baseplate carrier 4.With above-mentioned example similarly, exposure device EX possesses the carrying device H in order to the conveyance substrate P.Carrying device H, can with from the substrate P conveyance of coating developing device C/D to baseplate carrier 4.Checkout gear 60 ' is located on the conveyance path of carrying device H.

Figure 16 is the schematic diagram that shows checkout gear 60 '.Checkout gear 60 ' comprises in order to penetrate with the irradiation unit 61 ' of the different detection light Lb of exposure light EL and in order to obtain by the camera 62 ' from the object optical image (image) of the detection light Lb illumination of this irradiation unit 61 '.The checkout gear 60 ' of this example, for example the spy opens 2000-136916 communique (corresponding European patent the 1st, 001, No. 460) etc. disclose like that, under the state that the detection light Ld that makes the relative infrared laser of substrate P etc. tilts, detecting light Ld this substrate P edge that throws light on, and obtain the image at the edge that is thrown light on by this detections light Ld with camera 62 '.In this example, checkout gear 60 ' has the optical system 63 that comprises the prism that will guide to the substrate P edge from the detection light Ld that irradiation unit 61 ' penetrates etc., the detection light Ld at transmission substrate P edge and inject camera 62 ' at least one side of the detection light Ld of substrate P edge reflections.The testing result of checkout gear 60 ' outputs to control device 7.

Control device 7 distinguishes according to the testing result of checkout gear 60 ' whether the state at substrate P edge is desirable state.As mentioned above, the state at substrate P edge, the film that comprises the substrate P edge foreign matter that forms state and substrate P edge have stateless at least one.

When judging that according to the testing result of checkout gear 60 ' state at substrate P edge is defective mode, control device 7, use carrying device H with this substrate P conveyance to assigned position.For example, control device 7 when the state of judging the substrate P edge is defective mode, uses carrying device H, with this substrate P conveyance to coating developing device C/D.Perhaps, control device 7 uses carrying device H that this substrate P is recessed to regulation and recesses the position.On the other hand, when judging that according to the testing result of checkout gear 60 ' state at substrate P edge is desirable state, control device 7, use carrying device H with this substrate P conveyance to baseplate carrier 4.The substrate P that baseplate carrier 4 keeps from carrying device H.Control device 7 forms liquid and soaks area L R, and begins the immersion exposure of this substrate P on the substrate P that remains in baseplate carrier 4.

As mentioned above, because before also the liquid of the formation of at least a portion on substrate P liquid LQ soaks area L R in this example, detect the state at substrate P edge, therefore when rim condition is defective mode, can take not this substrate P conveyance to baseplate carrier 4 and is for example suitably disposed this substrate P conveyance to coating developing device C/D etc.Again and since not with this substrate P conveyance to baseplate carrier 4, therefore also can on this substrate P, not form liquid and soak area L R.In view of the above, can with above-mentioned example similarly, the productive reduction of suppression device.

In addition, also can detect the state at substrate P edge with using the illustrated checkout gear 60 ' of Figure 16 to be applicable to above-mentioned each example in this example.

Again, in above-mentioned each example, at least one side of the formation state of substrate P upper film and the state at substrate P edge for example also can use and specially to open the macro inspection apparatus that the 2002-195956 communique disclosed and detect.For example by earlier this macro inspection apparatus being located on the conveyance path of carrying device H, can be before substrate P remains in baseplate carrier 4, or remain in before liquid that baseplate carrier 4 back, at least a portion on substrate P form liquid LQ soaks area L R in substrate P, detect at least one of state at membrane stage on the substrate P and substrate P edge.

In above-mentioned each example,, also can omit the 2nd film Tc on the substrate P though the 2nd film Tc that detects on the substrate P forms state again.When not forming the 2nd film Tc on substrate P, checkout gear detects the formation state of the 1st film Rg.Control device 7 utilizes this testing result, can take the suitable disposal in order to the productive reduction of suppression device.

In above-mentioned each example,,, for example also can be the film that antireflection film etc. has other function though be that example describes with the top coated film of function with the 1st film Rg that protection is made of the sensitization material as the 2nd film Tc again.Again, in above-mentioned each example, though bright the 1st film and this two membranes of the 2nd film of being formed with on base material W also can form one deck or the multilayer film more than three layers certainly.Control device 7 can use the film formation status detection result who detects on this substrate P to take the suitable disposal that reduces in order to the suppression device productivity.

Again, in above-mentioned each example, though be formed at film on the substrate P, handle institute by the coating of applying device and forms, checkout gear detects the coating state of this film, and the film on the substrate P also can form by applying gimmick in addition.For example, antireflection film also has the situation that forms by gimmicks such as CVD method, PVD methods, and the checkout gear of above-mentioned each example, also can detect the formation state of the film that forms by gimmicks such as CVD method, PVD methods.As mentioned above, even to apply the film that (coating) gimmick in addition forms, checkout gear also can detect the formation state of this film.

In above-mentioned each example, though before the liquid of the formation of at least a portion on substrate P liquid LQ soaks area L R, detect the membrane stage on the substrate P and/or the state at substrate P edge, but also can before substrate P is moved into baseplate carrier 4, under the state that liquid is supplied on the substrate P film, carry out above-mentioned inspection.This kind inspection is as long as in the baseplate carrier outside, can carry out in arbitrary site.For example also can or carry out in the coating developing device C/D on the maintenance of the temperature adjustment in exposure device body S inside, exposure device EX tool, conveyance maintenance tool.At this moment, owing to can create the state that the liquid that is formed with liquid LQ soaks area L R in advance, therefore can check that liquid soaks the film of state.Following advantage is particularly arranged, can directly observe the liquid of liquid contact angle etc. and the physical property contact condition of film, judge whether film is the kilter that is suitable for immersion exposure.

Again, in above-mentioned each example, though the situation of the liquid immersion exposure apparatus of substrate P exposure is described as example to use via being formed at the liquid LQ that liquid on the substrate P soaks area L R, even but do not make liquid be full of the optical path space of exposure light EL and make via gas in the common dry type exposure device of base plate exposure, the film that also can be provided with in order to detect on the substrate forms the status detection device.

As mentioned above, the liquid LQ of above-mentioned each example uses pure water.The advantage of pure water is for can be easily obtaining in a large number in semiconductor fabrication factory etc., and few to the harmful effect of sensitization material on the substrate P and optical element (lens) etc.Again, pure water is except having no adverse effects to environment, because the content of impurity is extremely low, and the effect that can expect also that therefore clean substrate P surface is arranged and be located at the optical element surface of projection optical system PL front end.

Again, pure water (water) is that the refractive index n of the exposure light EL about 193nm is considered to about 1.44 to wavelength, when using ArF excimer laser (wavelength 193nm) when being used as the light source of exposure light EL, will be turned to 1/n by the short wavelength, be about about 134nm at wavelength on the substrate P, and can obtain high-resolution.Moreover, because depth of focus can be enlarged into about n times, promptly about about 1.44 times with comparing in air, as long as the depth of focus of same degree is with regard under the passable situation in the time of therefore guaranteeing with use in air, the numerical aperture of projection optical system PL can be further increased, also resolution can be improved from this point.

In above-mentioned each example, optical element FL is installed, can carries out the optical characteristics of projection optical system PL, the adjustment of for example aberration (spherical aberration, coma aberration) by this optical element at projection optical system PL front end.In addition, as the optical element that is installed on projection optical system PL front end, also can be the optical sheet that is used to adjust the optical characteristics of projection optical system PL.Or also can be the planopaallel plate that can make exposure light EL transmission.

In addition, because of liquid LQ flows the optical element of the projection optical system PL front end produced and the pressure between substrate P when big, can this optical element not made permutable structure yet, but optical element firmly is not fixed into and can moves because of its pressure.

Again, the projection optical system of above-mentioned example, though be full of the optical path space of image planes (outgoing plane) side of front end optical element (final optical element FL) with liquid, but for example also can adopt and internationally to disclose No. 2004/019128 brochure and disclose the projection optical system that the optical path space of the object plane of front end optical element (plane of incidence) side also is full of with liquid.

Though the liquid LQ of above-mentioned each example is a water, also can be the liquid beyond the water again.For example, the light source of exposure light EL is F ₂During laser, because this F ₂Laser can't transmission water, therefore also can use to make F ₂The liquid of laser-transmitting is used as liquid LQ, for example crosses perfluoroalkyl polyether (PFPE) or fluorine class wet goods fluorine class fluid.At this moment, for example form film, thus the part that contacts with liquid LQ is carried out the lyophily processing with the little molecular configuration material of polarity that comprises fluorine.As liquid LQ, in addition also can use exposure light EL is had transmittance and refractive index is high as far as possible and to the stable material of the photoresist that is coated on projection optical system PL and substrate P surface (for example cedar oil (cedar oil)) again.

Again, also can use refractive index is that about 1.6～1.8 material is used as liquid LQ.Further, also can form the optical element (final optical element FL etc.) of the projection optical system PL that contacts with liquid LQ with refractive index ratio quartz and the high material (for example more than 1.6) of fluorite.Also can use various fluids, for example supercritical fluid as liquid LQ.Again, (3L 4L) measures each positional information of mask microscope carrier 3 and baseplate carrier 4, is not limited to this, for example also can use the encoder system of being located at the scale (diffraction grating) of each microscope carrier in order to detection though use interferometer system in above-mentioned each example.Preferably be made as the amalgamation system that possesses interferometer system and encoder system this moment, use the measurement result of interferometer system to carry out the correction (calibration) of the measurement result of encoder system.Also can be to switch interferometer system and encoder system to use or use this both carry out the Position Control of microscope carrier again.

Again; substrate P as above-mentioned each example; except the semiconductor wafer of semiconductor device manufacturing usefulness, also can be applied in glass substrate that display devices uses, ceramic wafers that film magnetic head is used or the master (synthetic quartz, silicon chip) etc. of employed mask or graticule in exposure device.

As exposure device EX, make mask M and substrate P come the pattern of mask M is carried out the scanning exposure apparatus (scanning stepper) of the step-scan mode of scan exposure except being applicable to moved further, also can be applicable to the projection aligner (stepper) of stepping repetitive mode, it makes under the static state of mask M and substrate P, make the pattern single exposure of mask M, and make substrate P successively stepping move.

Again, in the exposure of stepping repetitive mode, also can make under the roughly static state of the 1st pattern and substrate P, after using projection optical system that the reduced image of the 1st pattern is transferred to substrate P, make under the roughly static state of the 2nd pattern and substrate P, use projection optical system to make the overlapping and single exposure (single exposure device of juncture) on substrate P of the reduced image of the 2nd pattern and the 1st pattern part.Again,, also can be applicable to the exposure device of stepping juncture as the exposure device of juncture, its will at least 2 on substrate P the overlapping and transfer printing of pattern parts, and moving substrate P successively.

Again, in the 4th example, though bright two baseplate carriers also can adopt a plurality of baseplate carriers at overloading platform (two microscope carrier) the type exposure device that exposure station and measuring station move in the exposure device of other example.

Moreover, the present invention can be applicable to that also for example the spy opens flat 11-135400 communique (the corresponding world discloses 1999/23692), the spy opens 2000-164504 communique (corresponding United States Patent (USP) the 6th, 897,963) etc. institute discloses like that, possesses in order to the baseplate carrier that the keeps substrate exposure device with the measurement microscope carrier that loads the reference feature that is formed with reference mark and/or various photoelectric sensors.

Again, in the above-mentioned example, though adopt the exposure device that locally liquid is riddled between projection optical system PL and substrate P, but the present invention can be applicable to that also for example the spy opens flat 6-124873 communique, the spy opens flat 10-303114 communique, United States Patent (USP) the 5th, 825, the liquid immersion exposure apparatus that No. 043 grade is disclosed, it exposes under the state of surperficial mass-impregnation in liquid as the substrate of exposure object.

Again, though be that example describes with the exposure device that possesses projection optical system PL in the above-mentioned example, the present invention is also applicable to exposure device that does not use projection optical system PL and exposure method.Even under so situation of not using projection optical system PL, exposure light also can shine on the substrate via the optical component of lens etc., liquid is soaked the zone be formed at regulation space between this optical component and substrate.

Kind as exposure device EX, be not limited in order to the semiconductor element exposure device for making of semiconductor element pattern exposure in substrate P, and also can be widely used in the liquid crystal display cells manufacturing with or the exposure device of display manufacturing usefulness or in order to the exposure device of making film magnetic head, photographic element (CCD), micro-machine, MEMS, DNA chip, graticule or mask etc. etc.

In addition, in the above-mentioned example, has formation regulation light-shielding pattern (or phase pattern on the substrate of transmitance though use, the dim light pattern) transmittance type mask, but also can use for example United States Patent (USP) the 6th, 778, the electronics mask that No. 257 communique disclosed replaces this mask, this electronics mask (be also referred to as variable forming mask, for example comprise a kind of DMD (Digital Micro-mirror Device) as non-light emitting-type image-displaying member (spatial light modulator) etc.) is according to answering the electronic data of exposing patterns to form the transmission pattern, reflection graphic patterns, or luminous pattern.

Again, the present invention also can be applicable to, for example internationally discloses No. 2001/035168 brochure and discloses, and forms the uniformly-spaced exposure device of line pattern (etching system) on the substrate P by interfering line to be formed on substrate P.And then, for example also the present invention can be applicable to for example special table 2004-519850 communique (corresponding United States Patent (USP) the 6th, 611, No. 316) exposure device that disclosed, it is synthetic on substrate via projection optical system with two mask patterns, and the scan exposure by once comes an irradiation area on the substrate is roughly carried out double exposure simultaneously.

As mentioned above, the exposure device EX of the application's example comprises the various subsystems of each cited in the application's scope inscape by assembling, makes with the mechanical precision, electric precision, the optical accuracy that keep regulation.For guaranteeing these various precision, before and after this assembling, various optical systems are carried out in order to the adjustment that reaches optical accuracy, various mechanical systems are carried out in order to the adjustment that reaches mechanical precision, various electrical systems are carried out in order to reach the adjustment of electric precision.Assembling procedure from various subsystems to exposure device, the distribution that comprises each other mechanical connection of various subsystems, circuit connects, the pipe arrangement connection of pneumatic circuit etc.Certainly, before the assembling procedure from various subsystems to exposure device, each subsystem other assembling procedure is arranged.After various subsystems to the assembling procedure of exposure device finishes, comprehensively adjust, to guarantee the various precision of exposure device integral body.In addition, the manufacturing of exposure device is preferably carried out in the clean room that temperature and cleannes etc. is all managed.

Micro elements such as semiconductor device, as shown in figure 17, via following step manufacturing, that is: carry out the function of micro element, the step 201 of performance design, make the step 202 of mask (graticule) according to this design procedure, manufacturing is as the step 203 of the substrate of device substrate, comprise according to aforementioned example and on substrate, form film, filminess is detected, assessment, mask pattern is exposed to substrate, makes the processing substrate step 204 of the processing substrate (exposure-processed) of the substrate development that has exposed again, the device number of assembling steps (comprises cutting action, bond sequence, the courses of processing such as packaging process) 205, check step 206 etc.

According to the present invention, substrate is exposed well, and can the productive reduction of suppression device.Particularly, the fault of liquid immersion exposure apparatus that can prevent to make base plate exposure via liquid is in possible trouble, and has the device of high-density circuit pattern with high productive capacity production.Therefore, probably the present invention can make contributions to high-tech industry and IT technical development that China comprises semiconductor industry.

Claims (45)

1. an exposure device shines exposure light so that aforesaid substrate exposes to the substrate that is formed with film via liquid, it is characterized in that possessing:

Aforesaid liquid is supplied on the aforesaid substrate, forms the liquid dipping machine structure that the liquid that passes through for above-mentioned exposure light soaks the zone;

Above-mentioned liquid is soaked before the zone is formed on the aforesaid substrate at above-mentioned liquid dipping machine structure, the film that detects on the aforesaid substrate forms the status detection device; And

Testing result according to above-mentioned detection device is judged the control device that whether can supply aforesaid liquid.

2. exposure device as claimed in claim 1 is characterized in that:

Above-mentioned film forms by coating prescribed material on aforesaid substrate;

Above-mentioned detection device detects the coating state of above-mentioned film.

3. exposure device as claimed in claim 1 is characterized in that:

Above-mentioned film comprises the film of lyophobicity.

4. exposure device as claimed in claim 1 is characterized in that:

Above-mentioned detection device detects the formation state of above-mentioned film with optical mode.

5. exposure device as claimed in claim 1 is characterized in that:

Above-mentioned detection device has in order to will detect light and is projected to the projection system on the aforesaid substrate and can receives receiving system via the above-mentioned detection light of aforesaid substrate.

6. exposure device as claimed in claim 5 is characterized in that possessing:

Storage device, the relation that is subjected to light state of storing the formation state and the above-mentioned receiving system of above-mentioned film in advance; And

Condition discriminating apparatus, according to above-mentioned relation that is stored in above-mentioned storage device and above-mentioned receiving system be subjected to the light result, distinguish whether the formation state of above-mentioned film is desirable state.

7. exposure device as claimed in claim 1 is characterized in that possessing:

In order to keep the retaining member of the aforesaid substrate that above-mentioned exposure light shines; And

Can be with the aforesaid substrate conveyance to the carrying device of above-mentioned retaining member,

Wherein, above-mentioned detection device is located on the conveyance path of above-mentioned carrying device.

8. exposure device as claimed in claim 7 is characterized in that:

Above-mentioned control device is controlled above-mentioned operation of conveying equipment according to the testing result of above-mentioned detection device.

9. exposure device as claimed in claim 7 is characterized in that:

Possess on the conveyance path of being located at above-mentioned carrying device, in order to handle the processing unit of aforesaid substrate;

The film that above-mentioned detection device detects the aforesaid substrate of moving into above-mentioned processing unit forms state.

10. exposure device as claimed in claim 1 is characterized in that:

Possess in order to keep the retaining member of the aforesaid substrate that above-mentioned exposure light shines;

The above-mentioned film that above-mentioned detection device detects on the aforesaid substrate that is under the state that is kept by above-mentioned retaining member forms state.

11., it is characterized in that as each described exposure device in the claim 1 to 10:

The above-mentioned film that above-mentioned detection device detects the aforesaid substrate edge forms state.

12. exposure device as claimed in claim 1 is characterized in that:

It is to detect the existence of film that film forms status detection.

13. an exposure device shines exposure light to substrate so that the aforesaid substrate exposure is characterized in that possessing via liquid:

Liquid dipping machine structure is supplied to aforesaid liquid on the aforesaid substrate, forms the liquid that passes through for above-mentioned exposure light and soaks the zone;

Checkout gear soaks above-mentioned liquid before the zone is formed on the aforesaid substrate at above-mentioned liquid dipping machine structure, detects the state at aforesaid substrate edge; And

Control device judges whether can supply aforesaid liquid according to the testing result of above-mentioned detection device.

14. exposure device as claimed in claim 13 is characterized in that:

The film that above-mentioned detection device detects the aforesaid substrate edge forms state.

15. exposure device as claimed in claim 14 is characterized in that:

Above-mentioned film forms by coating prescribed material on aforesaid substrate;

Above-mentioned detection device detects the thin film cladding state at aforesaid substrate edge.

16. exposure device as claimed in claim 14 is characterized in that:

Above-mentioned film comprises the film of lyophobicity.

17. exposure device as claimed in claim 13 is characterized in that:

Above-mentioned detection device detects whether have foreign matter on the aforesaid substrate edge.

18. exposure device as claimed in claim 13 is characterized in that:

It further possesses substrate holding structure, aforesaid substrate can be remained in the position that above-mentioned exposure light can shine;

Above-mentioned detection device detects the state at above-mentioned edge before aforesaid substrate is remained in the aforesaid substrate retaining member.

19. exposure device as claimed in claim 18 is characterized in that:

It further possesses can be with the carrying device of aforesaid substrate conveyance to above-mentioned substrate holding structure;

Above-mentioned detection device is located on the conveyance path of above-mentioned carrying device.

20. exposure device as claimed in claim 13 is characterized in that:

It further possesses the 1st substrate holding structure, aforesaid substrate can be remained in the position that above-mentioned exposure light can shine;

Above-mentioned detection device detects the state at above-mentioned edge after aforesaid substrate being remained in above-mentioned the 1st substrate holding structure.

21. exposure device as claimed in claim 20 is characterized in that:

After detecting the rim condition of the substrate that remains in above-mentioned the 1st substrate holding structure, above-mentioned the 1st substrate holding structure is moved in the 1st zone that above-mentioned exposure light can shine with above-mentioned detection device.

22. exposure device as claimed in claim 20 is characterized in that:

Above-mentioned the 1st substrate holding structure can comprise the 1st zone that above-mentioned exposure light can shine and with the regulation zone in different the 2nd zone, above-mentioned the 1st zone in, keep aforesaid substrate and move;

Above-mentioned detection device detects the rim condition of the aforesaid substrate that remains in above-mentioned the 1st substrate holding structure in above-mentioned the 2nd zone.

23. exposure device as claimed in claim 22 is characterized in that:

Further possess the 2nd substrate holding structure, can in the afore mentioned rules zone, keep substrate and mobile independently with above-mentioned the 1st substrate holding structure;

When above-mentioned the 1st substrate holding structure being disposed at above-mentioned the 2nd when zone, above-mentioned the 2nd substrate holding structure is disposed at above-mentioned the 1st zone.

24. exposure device as claimed in claim 23 is characterized in that:

Parallel with at least a portion of the exposure-processed of the substrate that in above-mentioned the 1st zone, is held in above-mentioned the 2nd substrate holding structure, in above-mentioned the 2nd zone, carry out with above-mentioned detection device remaining in the substrate edges status detection of above-mentioned the 1st substrate holding structure.

25. exposure device as claimed in claim 24 is characterized in that:

Parallel with at least a portion of the exposure-processed of the substrate that in above-mentioned the 1st zone, is held in above-mentioned the 2nd substrate holding structure, in above-mentioned the 2nd zone, obtain the positional information of the substrate that remains in above-mentioned the 1st substrate holding structure.

26. exposure device as claimed in claim 25 is characterized in that:

Above-mentioned detection device comprises in order to obtain the Optical devices of above-mentioned positional information.

27. exposure device as claimed in claim 13 is characterized in that:

Above-mentioned detection device comprises the camera in order to the optical image of obtaining above-mentioned edge.

28. an exposure device shines exposure light so that the aforesaid substrate exposure is characterized in that possessing via liquid to the substrate that is formed with film:

Optical system is disposed at the light path of exposure light;

Checkout gear is provided the film defects of the substrate of aforesaid liquid in order to detection; And

Only when above-mentioned detection device does not detect above-mentioned defective, provide liquid supplying apparatus to the above-mentioned substrate with aforesaid liquid.

29. exposure device as claimed in claim 28 is characterized in that:

The defective of above-mentioned film refers to that film does not exist.

30. exposure device as claimed in claim 28 is characterized in that:

The defective of above-mentioned film refers at the film of substrate edges bad.

31. exposure device as claimed in claim 28 is characterized in that:

Above-mentioned detection device does not detect film defects under aforesaid liquid is not present in state on the film.

32. exposure device as claimed in claim 28 is characterized in that:

Above-mentioned detection device is located in order to the carrying channel of substrate transferring to exposure device.

33. exposure device as claimed in claim 28 is characterized in that:

It further possesses in order to regulate the register of substrate temperature, and above-mentioned detection device is located at register.

34. exposure device as claimed in claim 28 is characterized in that:

Above-mentioned exposure device has exposure station and measuring station, and above-mentioned detection device is located at measuring station.

35. exposure device as claimed in claim 34 is characterized in that:

Further possesses the substrate holding structure that can keep substrate, move at above-mentioned exposure station and measuring station.

36. exposure device as claimed in claim 28 is characterized in that:

Above-mentioned film is sensitization material or diaphragm.

37. a device making method is characterized in that:

Use each described exposure device in the claim 1,13 and 28.

38. a substrate processing method using same carries out exposure-processed to the substrate that is formed with film, it is characterized in that, comprises:

Aforesaid substrate is remained in the step of substrate holding structure;

The step of the state of the above-mentioned film of detection aforesaid substrate;

According to the decision of the state of the above-mentioned film that is detected whether to the step of aforesaid substrate supply fluid;

Via aforesaid liquid the aforesaid substrate that remains in the aforesaid substrate retaining member is shone exposure light according to above-mentioned decision, aforesaid substrate is carried out the step of exposure-processed;

Before aforesaid substrate is shone above-mentioned exposure light, detect the step of the membrane stage of aforesaid substrate.

39. substrate processing method using same as claimed in claim 38 is characterized in that:

Before being remained in the aforesaid substrate retaining member, carries out aforesaid substrate the detection of the membrane stage of aforesaid substrate.

40. substrate processing method using same as claimed in claim 38 is characterized in that:

The detection of the membrane stage of aforesaid substrate comprises the detection of the membrane stage at aforesaid substrate edge.

41. substrate processing method using same as claimed in claim 38 is characterized in that:

The detection of the membrane stage of aforesaid substrate comprises the non-existent detection of above-mentioned film.

42. a substrate processing method using same exposes via liquid, it is characterized in that, comprises:

Film forming step on aforesaid substrate;

Check the step of above-mentioned film defects;

Only when above-mentioned defective does not exist by above-mentioned inspection, liquid is supplied to the step on the above-mentioned film;

Substrate is shone the step of above-mentioned exposure light via the liquid of above-mentioned supply.

43. substrate processing method using same as claimed in claim 42 is characterized in that:

The inspection of the formation of above-mentioned film, the irradiation of exposure light, film defects is carried out in the place of inequality.

44. substrate processing method using same as claimed in claim 42 is characterized in that:

The defective of above-mentioned film comprises not existing of film or bad at the film of substrate edges.

45. a device making method is characterized in that, comprises:

Use claim 38 or 42 described substrate processing method using sames come to substrate carry out exposure-processed step, make the substrate step of developing of having exposed and the substrate that has developed carried out processing steps.

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