CN100578800C - 图像传感器及其制作方法 - Google Patents
图像传感器及其制作方法 Download PDFInfo
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- CN100578800C CN100578800C CN200610171714A CN200610171714A CN100578800C CN 100578800 C CN100578800 C CN 100578800C CN 200610171714 A CN200610171714 A CN 200610171714A CN 200610171714 A CN200610171714 A CN 200610171714A CN 100578800 C CN100578800 C CN 100578800C
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 13
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- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 6
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
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- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
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- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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CN200610171714A CN100578800C (zh) | 2006-12-19 | 2006-12-19 | 图像传感器及其制作方法 |
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CN200610171714A CN100578800C (zh) | 2006-12-19 | 2006-12-19 | 图像传感器及其制作方法 |
Publications (2)
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CN101207141A CN101207141A (zh) | 2008-06-25 |
CN100578800C true CN100578800C (zh) | 2010-01-06 |
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CN200610171714A Active CN100578800C (zh) | 2006-12-19 | 2006-12-19 | 图像传感器及其制作方法 |
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Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102005414B (zh) * | 2009-08-28 | 2012-12-12 | 中芯国际集成电路制造(上海)有限公司 | Cmos图像传感器像素、制造方法及图像捕获设备 |
JP2012064709A (ja) * | 2010-09-15 | 2012-03-29 | Sony Corp | 固体撮像装置及び電子機器 |
CN103280451B (zh) * | 2013-06-04 | 2017-02-08 | 上海华力微电子有限公司 | 改善cmos图像传感器性能的方法 |
JP6384822B2 (ja) * | 2013-11-07 | 2018-09-05 | Tianma Japan株式会社 | イメージセンサ及びその製造方法 |
DE102014201772B4 (de) | 2014-01-31 | 2017-10-12 | Siemens Healthcare Gmbh | Direktkonvertierender Röntgenstrahlungsdetektor, CT-System und Verfahren hierzu |
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- 2006-12-19 CN CN200610171714A patent/CN100578800C/zh active Active
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Address after: Hsinchu Science Park, Taiwan, China Patentee after: Powerflash Technology Corporation Address before: Hsinchu Science Park, Taiwan, China Patentee before: Powerchip Semiconductor Corp. |
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Effective date of registration: 20190626 Address after: Hsinchu Science Park, Taiwan, China Patentee after: Lijing Jicheng Electronic Manufacturing Co., Ltd. Address before: Hsinchu Science Park, Taiwan, China Patentee before: Powerflash Technology Corporation |
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