CN100578723C - Light emission device, method of manufacturing the light emission device, and display device - Google Patents
Light emission device, method of manufacturing the light emission device, and display device Download PDFInfo
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- CN100578723C CN100578723C CN200710104150A CN200710104150A CN100578723C CN 100578723 C CN100578723 C CN 100578723C CN 200710104150 A CN200710104150 A CN 200710104150A CN 200710104150 A CN200710104150 A CN 200710104150A CN 100578723 C CN100578723 C CN 100578723C
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/46—Control electrodes, e.g. grid; Auxiliary electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/14—Manufacture of electrodes or electrode systems of non-emitting electrodes
- H01J9/148—Manufacture of electrodes or electrode systems of non-emitting electrodes of electron emission flat panels, e.g. gate electrodes, focusing electrodes or anode electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2203/00—Electron or ion optical arrangements common to discharge tubes or lamps
- H01J2203/02—Electron guns
- H01J2203/0204—Electron guns using cold cathodes, e.g. field emission cathodes
- H01J2203/0208—Control electrodes
- H01J2203/0212—Gate electrodes
- H01J2203/0216—Gate electrodes characterised by the form or structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2203/00—Electron or ion optical arrangements common to discharge tubes or lamps
- H01J2203/02—Electron guns
- H01J2203/0204—Electron guns using cold cathodes, e.g. field emission cathodes
- H01J2203/0208—Control electrodes
- H01J2203/024—Focusing electrodes
- H01J2203/026—Relative position to the gateelectrodes, emitters, cathodes or substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2329/00—Electron emission display panels, e.g. field emission display panels
- H01J2329/46—Arrangements of electrodes and associated parts for generating or controlling the electron beams
- H01J2329/4604—Control electrodes
- H01J2329/4608—Gate electrodes
- H01J2329/4613—Gate electrodes characterised by the form or structure
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Abstract
A light emission device and a display device having the light emission device are provided. The light emission device includes: a first substrate and a second substrate facing the first substrate; a plurality of first electrodes and a plurality of second electrodes on an inner surface of the first substrate, the first electrodes crossing the second electrodes; a plurality of electron emission regions electrically connected to the first electrodes at crossing regions where the first electrodes cross the second electrode; a light emission unit on an inner surface of the second substrate; and at least one spacer between the first and second substrates, Here, a shortest distance D between the spacer and the electron emission regions satisfies the following condition: 500 mu m <= D <= 0.2 Dh where, Dh is a diagonal length of at least one of the crossing regions, i.e. the areas where the electrodes overlap.
Description
Technical field
The present invention relates to light-emitting device and display unit.
Background technology
For example the display unit of display panels need be to the radiative light source of display floater to have the passive display floater.Usually, cold-cathode fluorescence lamp (CCFL) type light-emitting device and light-emitting diode (LED) type light-emitting device have been widely used as light source.
Because CCFL type light-emitting device and LED type light-emitting device are respectively linear light sources and some type light source, so they have a plurality of optical components of a plurality of diffused lights.When the light transmission optical component, optical component can cause light loss, and thereby CCFL type light-emitting device should be applied in relative high voltage so that obtain enough brightness with LED type light-emitting device.But this makes and is difficult to enlarge display unit.
Recently, proposed to comprise that the light-emitting device of first substrate and second substrate is to substitute CCFL type light-emitting device and LED type light-emitting device, electron emission unit with electron-emitting area and drive electrode is provided on first substrate, on second substrate, has formed luminescent coating and anode.This light-emitting device sends visible light by using the Electron Excitation luminescent coating that sends from electron-emitting area.
In light-emitting device, between the periphery of first and second substrates (or external zones), provide containment member so that it is sealed, thereby form vacuum tank.A plurality of interval bodies are arranged between first and second substrates to bear the pressure that is applied on the vacuum tank.
When light-emitting device is used as the light source of display unit, important optical characteristics is that (a) makes it possible to realize high brightness with low relatively power consumption, (b) luminous with uniform intensity on whole active area, and the display quality (for example contrast) that (c) improves the image of realizing by display unit
In traditional light-emitting device, because electronics sends and collides with interval body from electron-emitting area, the surface of interval body can be by charged.In this situation, the path of electron beam is twisted around interval body, and thereby sends greatly excessive or light in a small amount from interval body luminescent coating on every side.As a result, luminous uniformity can worsen around interval body.
Summary of the invention
According to the aspect of illustrated embodiments of the invention at a kind of light-emitting device, it is designed to improve brightness uniformity and the contrast of improving the image of realizing by display unit by the distortion that suppresses electron beam path, and a kind of display unit of using this light-emitting device as light source.
Point to a kind of light-emitting device according to the aspect of illustrated embodiments of the invention, wherein the distance between interval body and the electron-emitting area is configured to improve brightness uniformity and the contrast of improving the image of realizing by display unit by the distortion that suppresses electron beam path, and a kind of display unit of using this light-emitting device as light source.
In an example embodiment of the present invention, a kind of light-emitting device comprises: first substrate and in the face of second substrate of first substrate; Be positioned at a plurality of first electrodes and a plurality of second electrode of a side of facing second substrate of first substrate, first electrode and second electrode crossing; Be electrically connected to a plurality of electron-emitting areas of first electrode at the place, the zone of intersection of first electrode and second electrode crossing; Be positioned at the luminescence unit of second real estate to a side of first substrate; And the interval body between first and second substrates.Here, the beeline D between interval body and the electron-emitting area satisfies following condition:
500μm≤D≤0.2Dh，
Wherein Dh is the catercorner length of at least one zone of intersection.
In one embodiment, interval body has the height of 5 to 20mm scopes.In one embodiment, luminescence unit comprises anode and the luminescent coating on anode one side that applies with 10 to 15kV voltages.
In one embodiment, light-emitting device also comprises: the insulating barrier between first and second electrodes, wherein second electrode is positioned at the insulating barrier top, wherein a plurality of openings are formed at the zone of intersection and locate in second electrode and the insulating barrier, and wherein electron-emitting area is arranged on first electrode in the opening of insulating barrier.In one embodiment, interval body is positioned at the outside portion at the diagonal angle of at least one zone of intersection.In one embodiment, second electrode is parallel to each other and is spaced from each other with the distance of the scope of 100 to 400 μ m.In one embodiment, insulating barrier has the thickness of 15 to 30 mu m ranges.In one embodiment, each opening that forms in the described insulating barrier and second electrode has the diameter of 30 to 50 mu m ranges.
In another example embodiment of the present invention, provide a kind of manufacture method of electron emission unit of light-emitting device.Described method comprises: form a plurality of first electrodes with bar paten on substrate; Form insulating barrier on substrate, insulating barrier covers described first electrode and has the thickness of 15 to 30 mu m ranges; Form a plurality of second electrodes with the bar paten with first electrode crossing on insulating barrier, second electrode is spaced from each other with the distance of 100 to 400 μ m; Form a plurality of openings in second electrode at place, the cross one another zone of intersection of first and second electrodes and insulating barrier, the opening of second electrode exposes the opening of corresponding insulating barrier; And form a plurality of electron-emitting areas on first electrode in the opening of insulating barrier.
In one embodiment, second electrode forms by silk-screen printing technique.
In one embodiment, the formation of insulating barrier comprises: by forming a plurality of first openings through the described insulating barrier of the opening portion ground of a plurality of first mask layers wet etching, thereby and forming a plurality of second openings by through a plurality of openings of a plurality of second mask layers and the further base of wet etching first opening, each opening of each aperture efficiency first mask layer of second mask layer is little.
In another example embodiment of the present invention, a kind of display unit comprises: the display floater of display image; And be used for to the radiative light-emitting device of display floater.Light-emitting device comprises: first substrate and in the face of second substrate of described first substrate; Be positioned at a plurality of first electrodes and a plurality of second electrode of first real estate, first electrode and second electrode crossing to a side of second substrate; Be electrically connected to a plurality of electron-emitting areas of first electrode in the zone of intersection of first electrode and second electrode crossing; Be positioned at the side luminescence unit of second real estate to first substrate; And the interval body between first and second substrates.Here, the beeline D between interval body and the electron-emitting area satisfies following condition:
500μm≤D≤0.2Dh，
Wherein Dh is the catercorner length of at least one zone of intersection.
In one embodiment, interval body has the height of 5 to 20mm scopes; And luminescence unit comprises and applying with the anode of 10 to 15kV voltage and the luminescent coating that forms on anode one side.
In one embodiment, display unit also comprises the insulating barrier between first and second electrodes, wherein second electrode is positioned at described insulating barrier top, wherein a plurality of openings are formed in second electrode and insulating barrier at zone of intersection place, and wherein electron-emitting area is arranged on first electrode in the opening of described insulating barrier.In one embodiment, interval body is positioned at the outside portion at the diagonal angle of at least one zone of intersection.In one embodiment, second electrode is parallel to each other and is spaced from each other with the spacing of 100 to 400 μ m.In one embodiment, insulating barrier has the thickness of 15 to 30 mu m ranges; And each opening that forms in the insulating barrier and second electrode has the diameter of 30 to 50 mu m ranges.
In one embodiment, display floater has a plurality of first pixels, and light-emitting device has a plurality of second pixels, and wherein second pixel is lacked than the quantity of first pixel, and wherein the luminous intensity of each second pixel is independently controlled.
In example embodiment of the present invention, a kind of light-emitting device comprises: first substrate and in the face of second substrate of first substrate; First electrode and be positioned at second electrode of first real estate to a side of second substrate, first electrode and second electrode crossing; Be electrically connected to a plurality of electron-emitting areas of first electrode at the place, the zone of intersection of first electrode and second electrode crossing; Be positioned at the luminescence unit of second real estate to a side of first substrate; And the interval body between first and second substrates.Here, the beeline D between interval body and the electron-emitting area satisfies following condition:
500μm≤D≤0.2Dh，
Wherein Dh is the catercorner length of the described zone of intersection.
In one embodiment, light-emitting device also comprises the insulating barrier between first and second electrodes, wherein second electrode is positioned at the insulating barrier top, wherein a plurality of openings are formed at the zone of intersection and locate in second electrode and the insulating barrier, and electron-emitting area is arranged on first electrode in the opening of described insulating barrier.
Description of drawings
Drawing and description show example embodiment of the present invention together, and are used from explanation principle of the present invention with description one.
Fig. 1 is the part perspective view according to the light-emitting device of illustrated embodiments of the invention;
Fig. 2 is the partial cross section figure of the light-emitting device of Fig. 1;
Fig. 3 is the partial plan of electron emission unit of the light-emitting device of Fig. 1 and 2;
Fig. 4 is the curve chart that illustrates according to the offset distance at the electron beam center of the variation of the beeline D between interval body and the electron-emitting area;
Fig. 5 is the partial plan of electron emission unit of the light-emitting device of comparison example, and wherein the beeline D ' between interval body and the electron-emitting area is greater than 0.2Dh;
Fig. 6 is the curve chart that illustrates according to the interval body surrounding brightness deterioration rate of the variation of the ratio (D/Dh) of the catercorner length of the zone of intersection and the beeline between interval body and the electron-emitting area;
Fig. 7 A, 7B, 7C, 7D, 7E and 7F are the partial cross section figure of manufacture method of electron emission unit that the light-emitting device of Fig. 1 and 2 is shown; And
Fig. 8 is the schematic exploded perspective view according to the display unit of illustrated embodiments of the invention.
Embodiment
In following detailed description,, only illustrate and described some example embodiment of the present invention simply by the mode of example.The embodiment that it will be understood by those of skill in the art that description can change with various different modes, and without departing from the spirit and scope of the present invention.Thereby accompanying drawing and description should be regarded as exemplary and nonrestrictive.In addition, when an element become another element " on " time, can be directly on another element or have one or more intermediary element of being inserted in therebetween and not directly on another element.After this, similar reference number is censured similar element.
Referring to figs. 1 to 3, comprise vacuum tank 16 according to the light-emitting device 10 of illustrated embodiments of the invention, vacuum tank 16 has first and second substrates 12 and 14 that face with each other and have a distance (wherein this distance can be scheduled to) therebetween with parallel mode.In the periphery of first and second substrates 12 and 14 (or outer part) thus between provide containment member to form vacuum tank 16 so that they are sealed.The inside of vacuum tank 16 remains on about 10
-6The vacuum degree of holder (Torr).
Be used on the inner surface that electron emission unit 18 to second substrate, 14 emitting electrons is positioned at first substrate 12 and be used for being positioned at the inner surface of second substrate 14 by the luminescence unit 20 that utilizes this electronics to send visible light.
Among first and second electrodes 22 and 26, the electrode (for example second electrode 26) that (the x axle among Fig. 1) extends on the line direction of light-emitting device 10 mainly works to be applied in the scan electrode with turntable driving voltage, and the electrode (for example first electrode 22) that (the y axle among Fig. 1) extends on the column direction of light-emitting device 10 mainly works to be applied in the data electrode with data drive voltage.
Electron-emitting area 28 is formed by the material that is used for emitting electrons when forming electric field around it under vacuum environment, for example carbon-based material and/or nano-sized materials.For example, electron-emitting area 28 can comprise selected at least a material from the group that comprises carbon nano-tube, graphite, gnf, diamond, diamond-like-carbon, fullerene C60 (fullerene), silicon nanowires and combination thereof.
In the embodiment of said structure, first electrode 22 intersect with second electrode 26 or each district of (intersecting) corresponding to the single pixel region of light-emitting device 10.
Alternatively, two or more zones of intersection can be corresponding to single pixel region.In this situation,, receive common driver voltage thereby be electrically connected mutually corresponding to two or more first electrodes 22 and/or two or more second electrodes 26 of single pixel region.
Be arranged between first and second substrates 12 and 14 is the interval body 34 that is suitable for bearing the pressure that is applied on the vacuum tank 16 and keeps the gap between first and second substrates 12 and 14 equably.Interval body 34 can form with various versions, for example rectangle column type, column type and/or stripe shape.Each interval body 34 is positioned at the outside (or outside portion) in intersection (or intersecting) district of first and second electrodes 22 and 26.
In one embodiment, when interval body 34 was the column type interval body, interval body 34 can be located between first electrode 22 and the part that defines between second electrode 26, that is, and and the outside at the diagonal angle of each pixel region.In addition, in order to reduce the quantity of interval body 34, each interval body 34 can be designed as has big relatively width.In this situation, the width of interval body 34 is bigger than the distance (G of Fig. 2) between the second adjacent electrode 26, thereby contacts second electrode 26.
In light-emitting device 10, by forming a plurality of pixel regions in conjunction with first and second electrodes 22 and 26 as drive electrode.By first and second electrodes 22 and 26 being applied driving voltage (can pre-determine) and applying several kilovolts or higher positive direct-current (DC) voltage (anode voltage) and driven for emitting lights device 10 by antianode 30.
Form electric field around the electron-emitting area 28 of voltage difference between first and second electrodes 22 and 26 more than or equal to the pixel place of threshold voltage, and thereby send electronics (e from electron-emitting area 28
-).Attract by the anode voltage that is applied to anode 30, the counterpart collision of electronics that sends and the luminescent coating of related pixel 32, the excited fluophor layer 32 thus.The luminous intensity of the luminescent coating 32 of each pixel is corresponding to the electronics emission quantity of related pixel.
In foregoing example embodiment, interval body 34 has about 5 height to about 20mm scope at the thickness direction (the z axle of Fig. 1) of light-emitting device 10.Spacing between first and second substrates 12 and 14 corresponds essentially to the height of interval body 34.Because big relatively distance between first and second substrates 12 and 14, the arc discharge that can suppress in the vacuum tank 16 produces, and anode 30 can apply with 10kV or higher voltage, and is the voltage from 10 to 15kV in one embodiment.The screen intensity of light-emitting device 10 is directly proportional with anode voltage.
First and second electrodes 22 and 26 intersect each district of (or intersect) mutually and have several width to tens millimeters scopes, and tens electron-emitting areas 28 are positioned at each intersection (or intersecting) district.Pass through example, each intersection (or intersecting) district can have the size of 10mm * 10mm, each opening 261 of second electrode 26 can have the diameter of 30 to 50 μ m, and 20 or more a plurality of each electron-emitting area 28 with the little diameter of the diameter of ratio open 261 can be arranged in each intersection (or intersecting) place, district.
Above-mentioned light-emitting device 10 can realize active area the central part office 10,000cd/m
2Brightness.That is, compare with light-emitting diode (LED) type light-emitting device with cold-cathode fluorescence lamp (CCFL) type light-emitting device, the electrical power consumed that light-emitting device 10 usefulness are lower can realize higher brightness.
In addition, owing to send the to scatter surface collision of some electronics and interval body 34 of the electronics of advancing, make the surface charging of interval body 34 thus to second substrate 14 from electron-emitting area 28.Charged interval body 34 has twisted the electron beam path around the interval body 34.In the light-emitting device 10 of this example embodiment, the beeline between configuration space body 34 and the electron-emitting area 28 (D of Fig. 3) thus establish an equation 1 under satisfying.
500μm≤D≤0.2Dh，
Wherein, the Dh (see figure 3) is that first and second electrodes 22 and 26 intersect the catercorner length in district of (or intersect) mutually.
Fig. 4 is the curve chart that illustrates according to the offset distance at the electron beam center of the variation of the beeline between interval body and the electron-emitting area.The offset distance of electron beam can being attracted is ostracised to charged interval body or from charged interval body changes owing to electron beam is advanced near charged interval body.In the voltage difference between first and second electrodes 22 and 26 is that the voltage of 90V and 10kV is applied under the state of anode 30 and tests.
With reference to figure 4, along with the beeline D between interval body and the electron-emitting area reduces, charged interval body causes the offset distance at electron beam center to increase.When the offset distance of electron beam during, can produce the phenomenon that luminescent coating around the interval body sends excessively big or light in a small amount greater than about 115 μ m.
In the light-emitting device 10 of this example embodiment,, make the offset distance at the electron beam center that charged interval body causes be not more than about 115 μ m because the beeline D between interval body 34 and the electron-emitting area 28 is set to greater than about 500 μ m.Therefore, the light-emitting device 10 of this example embodiment can reduce (or minimizing) interval body 34 brightness variation on every side.
In addition, although the distortion of the electron beam path that is caused by charged interval body can effectively be suppressed along with the increase of the beeline D between interval body 34 and the electron-emitting area 28, the quantity that can be arranged on the electron-emitting area 28 around the corresponding intervals body 34 reduces.The deterioration that reduces to cause interval body 34 surrounding brightness of this electron-emitting area 28 quantity.
In light-emitting device 10 according to this example embodiment, consider the size in intersection (or intersecting) district of first and second electrodes 22 and 26, beeline configuration (or design) between interval body 34 and the electron-emitting area 28 has guaranteed excessively not reduce interval body 34 brightness on every side thus for being no more than 0.2Dh.
Fig. 5 is the partial plan of electron emission unit of the light-emitting device of comparison example, wherein the beeline D ' between interval body and the electron-emitting area is greater than 0.2Dh, and Fig. 6 is the curve chart that illustrates according to the interval body surrounding brightness deterioration rate of the variation of the ratio (D/Dh) of the catercorner length of the zone of intersection and the beeline between interval body and the electron-emitting area.
In Fig. 6, the brightness around the interval body worsens the example and shows non-conterminous in the value of the observed high-high brightness in the part place of interval body with respect at the active area of light-emitting device.In the voltage difference between first and second electrodes 22 and 26 is that the voltage of 90V and 10kV is applied under the state of anode 30 and tests.
With reference to figure 5, in the electron emitting device of comparison example, electron-emitting area 28 ' cannot be arranged on interval body 34 ' on every side.Therefore, in single intersection (or intersecting) district, the part that is bordering on interval body 34 ' that connects has difference with relative part away from interval body 34 ' in the distribution of electron-emitting area 28 '.
Therefore, can from test result shown in Figure 6, notice, along with the distance between interval body and the electron-emitting area increases, brightness deterioration rate around the interval body increases, and as the beeline D between interval body and the electron-emitting area during greater than 0.2Dh (for example D '), the brightness deterioration rate around the interval body becomes greater than 50%.
But, in the light-emitting device 10 of this example embodiment, because the beeline between interval body 34 and the electron-emitting area 28 is set to satisfy above-mentioned equation 1, so can suppress the distortion of the electron beam that caused by charged interval body 34.In addition, can suppress that excessive brightness around the interval body 34 worsens and thereby can improve the brightness uniformity of active area.
In this example embodiment; in order to increase process margin and to prevent that (or protecting it to avoid) can be in the short circuit between second electrode 26 that produces during the manufacturing process; second electrode 26 is spaced apart from each other with parallel arrangement and with about 100 μ m or bigger distance (G of Fig. 2), and this distance is 100 to 400 μ m in one embodiment.In one embodiment, if the distance between the second adjacent electrode 26 less than about 100 μ m, then process margin reduces and can produce short circuit during the composition technology between the second adjacent electrode 26.In another embodiment, if the distance between the second adjacent electrode 26 greater than about 400 μ m, then is difficult to form the pixel of suitable quantity in light-emitting device 10.
In this example embodiment, insulating barrier 24 can have about 15 μ m or bigger thickness (t of Fig. 2), and is the scope of 15 to 30 μ m in one embodiment.When insulating barrier 24 satisfies this thickness condition,, the voltage endurance of first and second electrodes 22 and 26 stablized the driving of light-emitting device 10 thereby improving.In addition, when the material of promptly convenient first electrode 22 (being metal material) was diffused in the insulating barrier 24 during the technology that forms insulating barrier 24, the voltage endurance of insulating barrier 24 did not worsen yet.
Under the state that insulating barrier 24 forms thicklyer relatively as mentioned above, opening 241 is formed in the insulating barrier 24.If opening 241 forms by wet etching process, then because the isotropic etching characteristic, can be little at the width of the opening 241 of insulating barrier 24 bottoms, wherein the width that increases opening along with the degree of depth of opening reduces gradually.That is, the sidewall that defines the opening of insulating barrier is not vertical formation, but tilt or recessed.
According to example embodiment of the present invention, define insulating barrier 24 opening 241 sidewall can by after this will be in greater detail second wet etching process and almost being vertically formed.By this second wet etching process, opening 261 and opening 241, its each have about 30 to about 50 mu m ranges than minor diameter, can be formed at respectively in second electrode 26 and the insulating barrier 24.
Below with reference to the manufacture method of Fig. 7 A to 7F description according to the electron emission unit of example embodiment of the present invention.
With reference to figure 7A, thereby on first substrate 12, form conductive layer and form first electrode 22 with the bar paten composition.Insulating material is deposited on first substrate 12, covers first electrode 22 simultaneously, forms thus to have thickness t and be approximately 15 μ m or bigger, and is the insulating barrier 24 of 15 to 30 μ m in one embodiment.Thereby insulating barrier 24 forms and obtains such thickness by repeating twice above silk-screen printing technique, drying process and baking process.
With reference to figure 7B, thereby conductive layer forms second electrode 26 that intersects with first electrode 22 on insulating barrier 24 with the bar paten silk screen printing.Here, between the second adjacent electrode 26 is about 100 μ m or bigger apart from G, and is 100 to 400 μ m in one embodiment.If second electrode 26 forms by silk-screen printing technique, then can omit the composition technology of for example photoetching.
With reference to figure 7C, first mask layer 36 is completed on insulating barrier 24, covers second electrode 26 simultaneously, thus and the patterned opening 361 that wherein will form electron-emitting area that forms.Thereby etching forms opening 261 by the expose portion of second electrode 26 that opening 361 exposes.
With reference to figure 7D, thereby the expose portion of the insulating barrier 24 that the opening by second electrode 26 261 exposes forms first opening 242 by the first wet etching process etching.Here, because insulating barrier 24 is thicker relatively, so opening 242 does not form and runs through insulating barrier 24 fully but partly be formed in the insulating barrier 24.Then, remove first mask 36.
With reference to figure 7E, thereby second mask 38 is completed into covers second electrode 26 and the patterned opening 381 wherein will form electron-emitting area that forms simultaneously on insulating barrier 24.The width of each opening 381 of second mask layer 38 can be littler than the width of each opening 361 of first mask layer 36.In this situation, second mask layer 38 is positioned at the peripheral top of each sidewall of first opening 242.
Then, 381 exposed portions of the opening that passes through second mask layer 38 of insulating barrier 24 are by the second wet etching process etching, thereby formation runs through second opening 243 of insulating barrier 24.Subsequently, remove second mask layer 38.By carrying out two wet etching process (or twice wet etching process), can form having basic or not enlarging each opening 261 of second electrode 26 and insulating barrier 24 and 241 width perpendicular to the opening 241 of the sidewall of insulating barrier 24 relatively.
With reference to figure 7F, electron-emitting area 28 is formed on first electrode 22 in the opening 241 of insulating barrier 24.In order to form electron-emitting area 28, carry out silk-screen printing technique, wherein prepare paste (paste) mixture with the viscosity that is suitable for printing by solvent (or solvent medium (solvent vehicle)) and adhesive are mixed with electronic emission material such as carbon nano-tube, graphite, gnf, diamond, diamond-like-carbon, fullerene (C60) and/or silicon nanowires.Described mixture is screen printed in the opening 241 of insulating barrier 24 and is dried and/or toasts.
But, the invention is not restricted to this silk-screen printing technique.For example, direct growth technology, sputtering technology and/or chemical vapor deposition method can be used to form electron-emitting area 28.
Fig. 8 uses the decomposition diagram of the light-emitting device of above-mentioned Fig. 1 to 3 as the display unit of light source according to illustrated embodiments of the invention.Display unit shown in Figure 8 only provides as example, and the present invention is not restricted to this.
With reference to figure 8, the display floater 40 of (or on) before display unit 100 comprises light-emitting device 10 and is positioned at light-emitting device 10.Being used for equably can be between light-emitting device 10 and display floater 40 to the diffusion of light plate 50 that display floater 40 diffusions are sent from light-emitting device 10.Diffusing panel 50 is by can predetermined distance separating with light-emitting device 10.
Light-emitting device 10 with said structure can improve the brightness uniformity of active area and thereby can reduce spacing between light-emitting device 10 and the diffuser 50.Between light-emitting device 10 and the diffuser 50 spacing reduce allow display unit 10 relative thin (or very thin) and reduce (or minimizing) by diffuser 50 caused light losses, improved luminous efficiency thus.
Upper frame (top chassis) 52 is positioned at preceding (or on) of display floater 40 and back (or down) face that underframe 54 is positioned at light-emitting device 10.Display panels or other passive (non-emission type) display floater can be used as display floater 40.In the following description, as example the situation that display floater 40 is display panels will be described in more detail.
Each TFT has the source terminal that is connected to data wire, be connected to the gate terminal of gate line and be connected to the drain terminal of the pixel electrode that is formed by transparent conductive material.When the signal of telecommunication when circuit board assemblies 46 and 48 is input to each grid and data wire, the signal of telecommunication is input to grid and the source terminal of TFT, and TFT opens or closes according to the signal of telecommunication, thereby drives the required signal of telecommunication of pixel electrode to drain terminal output.
The circuit board assemblies 46 and 48 of display floater 40 is connected respectively to drive IC encapsulation 461 and 481.In order to drive display floater 40, grid circuit board component 46 sends gate drive signal and data circuit board component 48 sends data drive signal.
Light-emitting device 10 comprises a plurality of pixels, and its quantity is littler than the pixel quantity of display floater 40, makes a pixel of light-emitting device 10 corresponding to two or more pixels of display floater 40.The highest gray scale in the gray scale of the respective pixel of each pixel response display floater 40 of light-emitting device 10 and luminous.Light-emitting device 10 can be in the gray scale of each pixel place performance 2-8 bit.
For simplicity, the pixel of display floater 40 pixel that is called first pixel and light-emitting device 10 becomes second pixel.First pixel corresponding to one second pixel is called first pixel groups.
The driving process of light-emitting device 10 is described.The signaling control unit that is used to control display floater 40 detects the highest gray scale of first pixel groups, respond the highest detected gray scale and calculate from the luminous required gray scale of second pixel, with the gradation conversion of calculating is numerical data, and uses this numerical data to produce the drive signal of light-emitting device 10.The drive signal of light-emitting device 10 comprises scanning drive signal and data drive signal.
The scanning of light-emitting device 10 and data circuit board component are connected respectively to drive IC encapsulation 561 and 581.For driven for emitting lights device 10, the scanning circuit board component sends scanning drive signal and the data circuit board component sends data drive signal.
When display image on first pixel groups, second pixel of the correspondence of light-emitting device 10 emission light, this light have can by with the synchronous and predetermined gray scale of first pixel groups.As mentioned above, the luminous intensity of each pixel of the independent control of light-emitting device 10 and thereby provide suitable luminous intensity for the respective pixel of display floater 40.As a result, the display unit 100 of this example embodiment can improve the contrast of screen, has improved display quality thus.
Although described the present invention in conjunction with some example embodiment, but be to be understood that the embodiment that the invention is not restricted to disclose, but opposite, the invention is intended to cover various improvement and equivalent arrangements in the spirit and scope that are included in claims and equivalent thereof.
Claims (17)
1. light-emitting device comprises:
First substrate and in the face of second substrate of described first substrate;
Be positioned at a plurality of first electrodes and a plurality of second electrode of described first real estate, described first electrode and described second electrode crossing to a side of described second substrate;
Be electrically connected to a plurality of electron-emitting areas of described first electrode at the place, the zone of intersection of described first electrode and second electrode crossing;
Be positioned at the luminescence unit of described second real estate to a side of described first substrate; And
Interval body between described first and second substrates,
Beeline between wherein said interval body and the described electron-emitting area satisfies following condition:
500μm≤D≤0.2Dh，
Wherein Dh is the catercorner length of at least one described zone of intersection.
2. according to the light-emitting device of claim 1, wherein said interval body has the height of 5 to 20mm scopes.
3. according to the light-emitting device of claim 2, wherein said luminescence unit comprises anode and the luminescent coating on described anode one side that applies with the voltage of 10 to 15kV scopes.
4. according to the light-emitting device of claim 1, also comprise the insulating barrier between described first and second electrodes, wherein said second electrode is positioned at described insulating barrier top, wherein a plurality of openings are formed in described second electrode and insulating barrier at place, the described zone of intersection, and wherein said electron-emitting area is arranged on described first electrode in the described opening of described insulating barrier.
5. according to the light-emitting device of claim 4, wherein said interval body is positioned at the outside portion at the diagonal angle of at least one described zone of intersection.
6. according to the light-emitting device of claim 4, wherein said second electrode is parallel to each other and is spaced from each other with the distance of the scope of 100 to 400 μ m.
7. according to the light-emitting device of claim 6, wherein said insulating barrier has the thickness of 15 to 30 mu m ranges.
8. according to the light-emitting device of claim 7, wherein each opening that forms in the described insulating barrier and second electrode has the diameter of 30 to 50 mu m ranges.
9. display unit comprises:
The display floater of display image; And
Be used for to the radiative light-emitting device of described display floater,
Wherein said light-emitting device comprises:
First substrate and in the face of second substrate of described first substrate;
Be positioned at a plurality of first electrodes and a plurality of second electrode of first real estate, described first electrode and second electrode crossing to a side of described second substrate;
Be electrically connected to a plurality of electron-emitting areas of described first electrode at the place, the zone of intersection of described first electrode and second electrode crossing;
Be positioned at the luminescence unit of second real estate to a side of described first substrate; And
Interval body between described first and second substrates,
Beeline D between wherein said interval body and the described electron-emitting area satisfies following condition:
500μm≤D≤0.2Dh，
Wherein Dh is the catercorner length of at least one described zone of intersection.
10. according to the display unit of claim 9, wherein said interval body has the height of 5 to 20mm scopes; And
Described luminescence unit comprises and applying with the anode of 10 to 15kV voltage and the luminescent coating that forms on described anode one side.
11. display unit according to claim 9, also comprise the insulating barrier between described first and second electrodes, wherein said second electrode is positioned at described insulating barrier top, wherein said a plurality of opening is formed in described second electrode and described insulating barrier at zone of intersection place, and wherein said electron-emitting area is arranged on described first electrode in the described opening of described insulating barrier.
12. according to the display unit of claim 11, wherein said interval body is positioned at the outside portion at the diagonal angle of at least one described zone of intersection.
13. according to the display unit of claim 11, wherein said second electrode is parallel to each other and is spaced from each other with the spacing of 100 to 400 mu m ranges.
14. according to the display unit of claim 13, wherein said insulating barrier has the thickness of 15 to 30 mu m ranges; And
Each opening that forms in described insulating barrier and described second electrode has the diameter of 30 to 50 mu m ranges.
15. display unit according to claim 9, wherein said display floater has a plurality of first pixels, and described light-emitting device has a plurality of second pixels, and wherein said second pixel is lacked than the quantity of first pixel, and the luminous intensity of wherein said each second pixel is independently controlled.
16. a light-emitting device comprises:
First substrate and in the face of second substrate of described first substrate;
Be positioned at first electrode and second electrode of described first real estate, described first electrode and second electrode crossing to a side of described second substrate;
Be electrically connected to a plurality of electron-emitting areas of described first electrode at the place, the zone of intersection of described first electrode and second electrode crossing;
Be positioned at the luminescence unit of described second real estate to a side of described first substrate; And
Interval body between described first and second substrates,
Beeline between wherein said interval body and the electron-emitting area satisfies following condition:
500μm≤D≤0.2Dh，
Wherein Dh is the catercorner length of the described zone of intersection.
17. light-emitting device according to claim 16, also comprise the insulating barrier between described first and second electrodes, wherein said second electrode is positioned at described insulating barrier top, wherein a plurality of openings are formed in described second electrode and insulating barrier at place, the described zone of intersection, and wherein said electron-emitting area is arranged on described first electrode in the described opening of described insulating barrier.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020060045224A KR100787235B1 (en) | 2006-05-19 | 2006-05-19 | Light emission device, method for manufacutring electron emission unit for light emission device, and liquid crystal display device with the light emission device as back light unit |
| KR45224/06 | 2006-05-19 | ||
| KR114605/06 | 2006-11-20 |
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| Publication Number | Publication Date |
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| CN101075544A CN101075544A (en) | 2007-11-21 |
| CN100578723C true CN100578723C (en) | 2010-01-06 |
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| CN200710104150A Expired - Fee Related CN100578723C (en) | 2006-05-19 | 2007-05-21 | Light emission device, method of manufacturing the light emission device, and display device |
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| CN (1) | CN100578723C (en) |
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| CN116351351A (en) * | 2021-12-28 | 2023-06-30 | 彩科(苏州)生物科技有限公司 | Transistor optical tweezers with increased illuminated intensity and microfluidic device |
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| JPH0850853A (en) * | 1994-08-04 | 1996-02-20 | Dainippon Printing Co Ltd | Manufacture of electron emission element |
| JP3070469B2 (en) * | 1995-03-20 | 2000-07-31 | 日本電気株式会社 | Field emission cold cathode and method of manufacturing the same |
| KR100263310B1 (en) * | 1998-04-02 | 2000-08-01 | 김순택 | Flat panel display having field emission cathode and method of preparing the same |
| JP3689656B2 (en) * | 2000-09-14 | 2005-08-31 | キヤノン株式会社 | Electron emitting device, electron source, and image forming apparatus |
| KR20030063000A (en) * | 2002-01-22 | 2003-07-28 | 엘지.필립스디스플레이(주) | Construction for CNT cold cathode of flat type CRT |
| KR20040034251A (en) * | 2002-10-21 | 2004-04-28 | 삼성에스디아이 주식회사 | Field emission device |
| JP2005044705A (en) * | 2003-07-25 | 2005-02-17 | Sony Corp | Cold cathode field electron emission display device |
| JP4682525B2 (en) * | 2004-03-25 | 2011-05-11 | パナソニック電工株式会社 | Color liquid crystal display |
| KR20060001503A (en) * | 2004-06-30 | 2006-01-06 | 삼성에스디아이 주식회사 | Electron emission device comprising resistance layer between cathode electrodes |
-
2006
- 2006-05-19 KR KR1020060045224A patent/KR100787235B1/en not_active IP Right Cessation
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| KR20070111863A (en) | 2007-11-22 |
| KR100787235B1 (en) | 2007-12-21 |
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