CN100573823C - A kind of production method of discrete device front metal - Google Patents
A kind of production method of discrete device front metal Download PDFInfo
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- CN100573823C CN100573823C CNB2008101642147A CN200810164214A CN100573823C CN 100573823 C CN100573823 C CN 100573823C CN B2008101642147 A CNB2008101642147 A CN B2008101642147A CN 200810164214 A CN200810164214 A CN 200810164214A CN 100573823 C CN100573823 C CN 100573823C
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Abstract
A kind of production method of discrete device front metal belongs to the technical field that semi-conductor discrete device is made.After the silicon chip of long good device carries out surface treatment, clean, dry, silicon chip sputtered titanium tungsten alloy and nickel-vanadium alloy in sputtering unit, the silicon chip that sputter is good carries out surface treatment again, clean, dry, at last the silicon chip that dries is placed evaporator thermal evaporation silver.The production method of above-mentioned a kind of discrete device front metal, before evaporation silver, there have been the titanium-tungsten that sputter gets on and the protection of nickel-vanadium alloy in the front of device, has shielded secondary electron and X ray that evaporation silver produces effectively, has avoided the damage of evaporation silver to device; Sputter there is the silicon chip of titanium-tungsten and nickel-vanadium alloy at NH
4Soak back overflow in the deionization tank in the mixed solution of F and HF, and then evaporation silver, not only satisfy the requirement of bearing pulling force, also increased the adhesion property of the silver layer of the titanium tungsten nickel vanadium of sputter and evaporation simultaneously.
Description
Technical field
The invention belongs to the technical field that semi-conductor discrete device is made, be specifically related to a kind of production method of discrete device front metal.
Background technology
Can be divided into discrete device and integrated circuit two major parts in whole semiconductor industry, for each piece, the manufacturing of wafer and encapsulation all are two necessary steps, in the wafer fabrication portion, need finish the growth of device, and require to carry out necessary preparation for the encapsulation of back.For discrete device, wafer is made the operation that this step need finish and is comprised device portions and metal part.Device portions is meant the step through a series of precisions, and at the good junction barrier of positive face length of silicon chip, this moment, the device portions of silicon chip formed.Junction barrier is for common diode or triode, and what refer to is exactly PN junction; For Schottky diode, refer to the potential barrier of semiconductor and metal.Metal partly is a specific metal the silicon chip front and back of growing good device is long, for the encapsulation of back is got ready.The requirement of metal part is: will meet the needs of encapsulation on the one hand, on the other hand, can not bring damage to device, to such an extent as to component failure.
For the Discrete device packaging enterprise of China, most restrictions owing to technical conditions, the front top-level metallic that requires discrete device is the thicker silver of one deck, general thickness will reach
And so thick silver can only be realized by the method for evaporation.Existing solution is the very thin titanium of positive evaporation one deck earlier at discrete device, is about
As adhesion layer, next evaporate one deck nickel again, be about
As the barrier layer, the silver that final evaporation one deck is thick.The benefit of doing like this is to implement conveniently, front metal can once form in evaporator, but because all front metals all pass through evaporation formation, secondary electron that produces in the evaporation process and X ray can produce lattice damage to semiconductor, and then cause big reverse leakage current and lost efficacy.Theoretically, the wafer that has about 10% of the discrete device of Zhi Zaoing can be affected in this way, and in the actual production, in period occurred frequently, have the wafer up to 50% to be affected, the enterprise that produced 10,000 6 inches wafers with month is an example, and is defective even if having only 10% wafer influenced by this, the economic loss that caused in every month is also up to 1,000,000 RMB, and the loss of causing for wafer production enterprise is huge.
Summary of the invention
At problems of the prior art, the present invention proposes a kind of technical scheme of production method of discrete device front metal.
For achieving the above object, technical scheme of the present invention is as follows:
The production method of described a kind of discrete device front metal is characterized in that comprising following processing step:
1) after the silicon chip of long good device has carried out surface treatment, cleans, dries;
2) through silicon chip sputtered titanium tungsten alloy and nickel-vanadium alloy in sputtering unit of step 1), vacuum values is controlled at 2.0 * 10
-6Below the Torr;
3) sputter is good silicon chip carries out surface treatment again, cleans, dries;
4) silicon chip through step 3) places evaporator, adopts thermal evaporation technology, in the nickel-vanadium alloy surface evaporation one layer thickness is set and is
Silver.
The production method of described a kind of discrete device front metal, the silicon chip that it is characterized in that the long good device described in the step 1) are meant that oxide layer, guard ring and junction barrier on the silicon chip all grow.
The production method of described a kind of discrete device front metal, it is characterized in that the surface treatment described in step 1) and the step 3) will be meant will be the silicon chip of long good device at NH
4Soaked for 15～25 seconds NH in the mixed solution in the mixed solution of F and HF
4The weight ratio of F: HF is 8～12: 1, and its total concentration by weight is 35～45%, NH
4The temperature of the mixed solution of F and HF is controlled at 18～22 ℃.
The production method of described a kind of discrete device front metal is characterized in that the cleaning described in step 1) and the step 3) is meant silicon chip is placed deionization tank overflow 8～12 minutes that the temperature of deionized water is controlled at 18～22 ℃.
The production method of described a kind of discrete device front metal, it is characterized in that the weight ratio Ti of titanium tungsten in the described titanium-tungsten: W is 1: 10, and sputter thickness is
The production method of described a kind of discrete device front metal, it is characterized in that the weight ratio Ni of nickel vanadium in the described nickel-vanadium alloy: V is 93: 7, and sputter thickness is
The production method of described a kind of discrete device front metal is characterized in that the thermal evaporation technology described in the step 4) is meant that earlier the evaporator cavity being evacuated to vacuum degree reaches 5.0 * 10
-6Below the Torr, begin heating, stop heating in the time of 130～170 ℃, between the period of heating, vacuumize and can not interrupt, end to be heated and vacuum degree reach 2.0 * 10
-6Below the Torr, start vaporizer
Silver.
The production method of described a kind of discrete device front metal is characterized in that the step 3) silicon chip dries and the evaporation of step 4) silver is provided with and is no more than 2 hours blanking time.
The production method of described a kind of discrete device front metal, the heating-up temperature that it is characterized in that the evaporator cavity is 145～155 ℃.
The production method of above-mentioned a kind of discrete device front metal, titanium-tungsten and nickel-vanadium alloy are that the method by sputter forms, silver is that evaporation forms, because before evaporation silver, there have been the titanium-tungsten that sputter gets on and the protection of nickel-vanadium alloy in the front of device, has shielded secondary electron and X ray that evaporation silver produces effectively, has avoided the damage of evaporation silver to device, and then thoroughly avoided producing therefrom the problem of reverse leakage current, improved the qualification rate of wafer; Sputter there is the silicon chip of titanium-tungsten and nickel-vanadium alloy at NH
4Soak back overflow in the deionization tank in the mixed solution of F and HF, and then evaporation silver, through this road PROCESS FOR TREATMENT, for a device that is of a size of 62mil * 62mil, its pulling force that can bear is greater than 1KG on average greater than 10KG and produce desired pulling force, so just satisfy the requirement of bearing pulling force fully, also increased simultaneously the adhesion property of the silver layer of the titanium tungsten nickel vanadium of sputter and evaporation, if after sputter has titanium-tungsten and nickel-vanadium alloy, without NH
4Soak in the mixed solution of F and HF, the silver layer of the titanium-tungsten of sputter and nickel-vanadium alloy and evaporation is easy to layering and comes off.
Description of drawings
Fig. 1 is a discrete device front metallic structure distribution schematic diagram of the present invention.
Among the figure: 1-silicon chip, 2-junction barrier, 3-guard ring, 4-oxide layer, 5-silver, 6-nickel-vanadium alloy, 7-titanium-tungsten.
Embodiment
Below in conjunction with specific embodiment the present invention is described in further detail.
A kind of production method of discrete device front metal comprises following processing step:
1) will grow the silicon chip 1 of good device at NH
4Soaked for 20 seconds in the mixed solution of F and HF, take out silicon chip 1 and place deionization tank overflow 10 minutes, dry NH then
4NH in the mixed solution of F and HF
4The weight ratio of F: HF is 10: 1, and its total concentration by weight is 40%, NH
4The mixed solution of F and HF and the temperature of deionized water are controlled at 18～22 ℃;
2) through silicon chip 1 sputtered titanium tungsten alloy 7 and nickel-vanadium alloy 6 in sputtering unit of step 1), the weight ratio Ti of titanium tungsten: W is 1: 10 in the titanium-tungsten 7, and sputter thickness is
The weight ratio Ni of nickel vanadium: V is 93: 7 in the nickel-vanadium alloy 6, and sputter thickness is
Vacuum values is controlled at 2.0 * 10
-6Below the Torr;
3) sputter is good silicon chip 1 is at NH
4Soaked for 20 seconds in the mixed solution of F and HF, take out silicon chip 1 and place deionization tank overflow 10 minutes, dry NH in the mixed solution then
4The weight ratio of F: HF is 10: 1, and its total concentration by weight is 40%, NH
4The mixed solution of F and HF and the temperature of deionized water are controlled at 18～22 ℃;
4) silicon chip 1 through step 3) places evaporator, the evaporator cavity is evacuated to vacuum degree reaches 5.0 * 10
-6Below the Torr, begin heating, stop heating in the time of 150 ℃, between the period of heating, vacuumize and can not interrupt, end to be heated and vacuum degree reach 2.0 * 10
-6Below the Torr, in nickel-vanadium alloy 6 surface evaporations one layer thickness is set and is
Silver 5.
The silicon chip 1 of long good device is meant that oxide layer 4, guard ring 3 and junction barrier 2 on the silicon chip 1 all grow in the above-mentioned step 1).
The above-mentioned step 3) silicon chip drying and the evaporation of step 4) silver are provided with and are no more than 2 hours blanking time.
A large amount of evidences, silicon chip 1 is at NH in step 1) and the step 3)
4Soaked 15 seconds, 25 seconds NH in the mixed solution of F and HF
4NH in the mixed solution of F and HF
4The weight ratio of F: HF is 8: 1,12: 1, and its total concentration by weight is 35%, 45%, after the taking-up silicon chip 1 is placed deionization tank overflow 8 minutes, 12 minutes, and other process conditions are identical with embodiment, also can reach the technique effect the same with embodiment.
The evaporator cavity is heated to 130 ℃, 145 ℃, 155 ℃, 170 ℃ in the step 4), and other process conditions are identical with embodiment, also can reach the technique effect the same with embodiment.
Sputtering technology described in the present invention and evaporation technology are known technology, do not repeat them here.
Claims (9)
1. the production method of a discrete device front metal is characterized in that comprising following processing step:
1) after the silicon chip (1) of long good device has carried out surface treatment, cleans, dries;
2) through silicon chip (1) sputtered titanium tungsten alloy (7) and nickel-vanadium alloy (6) in sputtering unit of step 1), vacuum values is controlled at 2.0 * 10
-6Below the Torr;
3) sputter is good silicon chip (1) carries out surface treatment again, cleans, dries;
4) silicon chip (1) through step 3) places evaporator, adopts thermal evaporation technology, in nickel-vanadium alloy (6) surface evaporation one layer thickness is set and is
Silver (5).
2. the production method of a kind of discrete device front metal according to claim 1, the silicon chip (1) that it is characterized in that the long good device described in the step 1) are meant that oxide layer (4), guard ring (3) and junction barrier (2) on the silicon chip (1) all grow.
3. the production method of a kind of discrete device front metal according to claim 1, it is characterized in that the surface treatment described in step 1) and the step 3) be meant will be the silicon chip (1) of long good device at NH
4Soaked for 15～25 seconds NH in the mixed solution in the mixed solution of F and HF
4The weight ratio of F: HF is 8～12: 1, and its total concentration by weight is 35～45%, NH
4The temperature of the mixed solution of F and HF is controlled at 18～22 ℃.
4. the production method of a kind of discrete device front metal according to claim 1, it is characterized in that the cleaning described in step 1) and the step 3) is meant places deionization tank overflow 8～12 minutes with silicon chip (1), and the temperature of deionized water is controlled at 18～22 ℃.
5. the production method of a kind of discrete device front metal according to claim 1, it is characterized in that the weight ratio Ti of titanium tungsten in the described titanium-tungsten (7): W is 1: 10, and sputter thickness is
6. the production method of a kind of discrete device front metal according to claim 1, it is characterized in that the weight ratio Ni of nickel vanadium in the described nickel-vanadium alloy (6): V is 93: 7, and sputter thickness is
7. the production method of a kind of discrete device front metal according to claim 1 is characterized in that the thermal evaporation technology described in the step 4) is meant that earlier the evaporator cavity being evacuated to vacuum degree reaches 5.0 * 10
-6Below the Torr, begin heating, stop heating in the time of 130～170 ℃, between the period of heating, vacuumize and can not interrupt, end to be heated and vacuum degree reach 2.0 * 10
-6Below the Torr, start vaporizer
Silver (5).
8. the production method of a kind of discrete device front metal according to claim 1 is characterized in that the step 3) silicon chip dries and the evaporation of step 4) silver is provided with and is no more than 2 hours blanking time.
9. the production method of a kind of discrete device front metal according to claim 7, the heating-up temperature that it is characterized in that the evaporator cavity is 145～155 ℃.
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| CN103681885B (en) * | 2013-12-18 | 2017-03-29 | 济南市半导体元件实验所 | The preparation method of Schottky diode chip, device and chip composite potential barrier |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060068595A1 (en) * | 2004-09-30 | 2006-03-30 | Frank Seliger | Semiconductor substrate thinning method for manufacturing thinned die |
| US20060160267A1 (en) * | 2005-01-14 | 2006-07-20 | Stats Chippac Ltd. | Under bump metallurgy in integrated circuits |
| CN1848381A (en) * | 2005-04-15 | 2006-10-18 | 中芯国际集成电路制造(上海)有限公司 | Method for forming low-stress multi-layer metallized structure and leadless solder end electrode |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060068595A1 (en) * | 2004-09-30 | 2006-03-30 | Frank Seliger | Semiconductor substrate thinning method for manufacturing thinned die |
| US20060160267A1 (en) * | 2005-01-14 | 2006-07-20 | Stats Chippac Ltd. | Under bump metallurgy in integrated circuits |
| CN1848381A (en) * | 2005-04-15 | 2006-10-18 | 中芯国际集成电路制造(上海)有限公司 | Method for forming low-stress multi-layer metallized structure and leadless solder end electrode |
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Address after: 310018 No. 20, No. 199, Xiasha Economic Development Zone, Hangzhou, Zhejiang Patentee after: Hangzhou Lion Microelectronics Co., Ltd. Address before: 310018 No. 20, No. 199, Xiasha Economic Development Zone, Hangzhou, Zhejiang Patentee before: Hangzhou Lion Microelectronics Co., Ltd. |