CN100570923C - OLED lamp and manufacture method thereof - Google Patents

OLED lamp and manufacture method thereof Download PDF

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CN100570923C
CN100570923C CNB031327508A CN03132750A CN100570923C CN 100570923 C CN100570923 C CN 100570923C CN B031327508 A CNB031327508 A CN B031327508A CN 03132750 A CN03132750 A CN 03132750A CN 100570923 C CN100570923 C CN 100570923C
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oled
electrode
substrate
ray structure
lamp
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CN1497750A (en
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R·S·科克
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Global OLED Technology LLC
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Eastman Kodak Co
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21KNON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K2/00Non-electric light sources using luminescence; Light sources using electrochemiluminescence
    • F21K2/06Non-electric light sources using luminescence; Light sources using electrochemiluminescence using chemiluminescence
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301Details of OLEDs
    • H10K2102/311Flexible OLED
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/19Tandem OLEDs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/841Self-supporting sealing arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/844Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/32Stacked devices having two or more layers, each emitting at different wavelengths
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/841Applying alternating current [AC] during manufacturing or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/851Division of substrate
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00Stock material or miscellaneous articles
    • Y10S428/917Electroluminescent

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

A kind of OLED lamp comprises: a substrate; The non-pixel type OLED that on this substrate, forms; This OLED is included on this substrate first electrode that forms and extend to the second relative edge of this substrate from first edge of this substrate, the OLED ray structure that on the top of first electrode, forms, the part of first electrode at first edge of contiguous this substrate of this OLED ray structure reservation exposes, and second electrode that forms and extend to second edge of this substrate on this OLED ray structure; And be positioned on this non-pixel type OLED seal lid, it keeps the expose portion of first electrode and second electrode, be used for being connected with electrically contacting of lamp.

Description

OLED lamp and manufacture method thereof
The present invention relates to the application that Organic Light Emitting Diode (OLEDs) is used for area illumination, more specifically, the present invention relates to the structure and the manufacture method of OLED area illumination lamp.
Utilize the Sony ericsson mobile comm ab of light-emitting diode (OLEDs) in needs intensity and long-life application, constantly to be applied.For example, solid state LED s is applied in the automotive field at present.These devices are typically by being combined into single component with a plurality of, little point-source of light LEDs with glass lens, when needs are specifically used, this glass lens is suitable for being designed to light is controlled; For example, referring to disclosed WO99/57945 on November 11st, 1999.These a plurality of devices are very expensive, make and be integrated into single area lighting device complexity.In addition, Chang Gui LEDs provides point-source of light and a plurality of point-source of light is applied to area illumination.
Make Organic Light Emitting Diode (OLEDs) by deposit organic semiconducting materials between the electrode on the substrate.This technology can produce the light source with extended surface area on a single substrate.Description of the Prior Art use the additive of electroluminescent material as traditional lighting; For example, the US6168282 that authorizes to Chien January 2 calendar year 2001.In the case, owing to send light from electroluminescent material, electroluminescent device just can not be used for main light emission.Disclosed EP1120838A2 described a kind of being used for a plurality of organic luminescent devices have been installed so that produce the method for area illumination light source on an assembling substrate August 1 calendar year 2001.Yet this method that a plurality of light sources are installed on a substrate has increased complexity, has increased the manufacturing cost of area illumination light source thus.
Therefore, just need a kind of improvement, solid-state flat area illuminating device is so that provide the illumination with high brightness high light and simple manufacturing process is provided.
Just can address that need according to a kind of OLED lamp provided by the invention, the OLED lamp comprises: a substrate; The non-pixel type OLED that on substrate, forms, OLED comprises first electrode that extends to second opposite edges of substrate from first edge of substrate and form at substrate, the OLED ray structure that on the top of first electrode, forms, a part of leaving exposed state of first electrode of first edge of adjacent substrate, and second electrode that on the OLED ray structure, forms and extend to second edge of substrate; And being positioned at the lid of sealing on non-pixel type (non-pixellated) OLED, it also keeps the expose portion of first electrode and second electrode, is used for being connected with electrically contacting of lamp.
The present invention has provides a kind of cheapness, the simple advantage of making the regional OLED lighting source with high light.
Fig. 1 illustrates the fragmentary cross-sectional view of prior art OLED;
Fig. 2 is the profile of OLED lamp according to an embodiment of the invention;
Fig. 3 is the profile of OLED lamp according to another embodiment of the invention;
Fig. 4 is the profile of OLED lamp according to still a further embodiment;
Fig. 5 is the top view with conveyer belt of a plurality of OLED lamps according to an embodiment of the invention;
Fig. 6 is the schematic diagram of explanation according to the manufacture method of OLED lamp of the present invention; And
Fig. 7 is the schematic cross sectional view of prior art OLED.
Should be appreciated that because each layer is too thin and difference in thickness each layer is too big, so accompanying drawing is not drawn in proportion.
Fig. 1 is the schematic diagram of prior art OLED, and prior art OLED comprises that being arranged on two electrodes 14 and 16 for example is respectively organic luminous layer 12 between negative electrode and the anode.Organic light-emitting structure 12 comprises multilayer in the structure and luminous according to being applied to voltage on the electrode by power supply 17.The OLED photophore typically comprises the substrate 20 of glass for example or plastics.Should be appreciated that if the sandwich construction of organic luminous layer 12 is inverted, the relative position with respect to substrate 20, negative electrode and anode just can be provided with equally on the contrary so.
With reference to Fig. 2, according to one embodiment of present invention, the OLED lamp comprises substrate 20; Be formed on the non-pixel type OLED on the substrate, OLED is included on the substrate first electrode 14 that forms and extend to second opposite edges 26 of substrate 20 from first edge 22 of substrate.First electrode can but needn't extend to first edge of substrate 20 all along.Form OLED ray structure 12 on the top of first electrode 14, OLED ray structure 12 leaving exposed go out the part of first electrode at first edge 22 of adjacent substrate.Second electrode 16 is formed on the OLED ray structure 12 and to second edge 26 of substrate and extends.Second electrode can but needn't extend to second edge of substrate always.Seal cover 18 be positioned on the non-pixel type OLED, leaving exposed goes out first electrode 14 and second electrode 16 and is used to make and electrically contacts a part that is connected with lamp.Seal that to cover 18 can be an overlay or an airtight capping, and seal and cover 18 and can extend to edge 22 with 26 but must expose electrode 14 and can be connected with electrode so that electrically contact always with at least a portion of 16.Term " non-pixel type (the non-pixellated) " meaning is that the OLED luminescent layer and first and second electrodes are continuous on the elongated area of substrate and are not split into many little can being activated separately to form the subdivision or the pixel of image as used herein.Because linear source that can be by serial deposition station with each layer be provided on the mobile substrate, these deposition station and moving direction vertical be provided with of substrate by deposition station, the OLED lamp that therefore has said structure self provides and has been easy to make on continuous production line.Because simple in structure, thus limited to shelter the substrate requirement at each deposition station place, and can utilize as sheltering that the fixedly mask of the part of deposition station is realized being fit to.
In operation, by providing from exposed electrodes 14 on the left side of part 22 and 26 and the right side and 16 connectors to come to OLED lamp power supply of the present invention to the power supply (not shown).By power supply is provided, electric current is sealed the electrode that covers under 18 and OLED ray structure 12 and is produced light with regard to passing.
The present invention can further expand to and comprise a plurality of stacked OLED ray structures 12.Utilize a plurality of stacked OLED structures can to increase total output light quantity of structure several times but also increased the required electric current of OLED lamp 10.The quantity of OLED ray structure can increase, till the actual current bearer cap that arrives electrode 14 and 16, or till the transparency of electrode 14 and 16 goes down, or till OLED luminescent layer 12 makes more layer not conform to practicality.
With reference to Fig. 3, in multilayer OLED lamp, the 2nd OLED ray structure 12` is positioned on second electrode 16.The third electrode 14` that electrically contacts with first electrode 14 is positioned on the 2nd OLED ray structure 12` and seals these multilayers with lid 18 as shown in Figure 2.This multilayer is arranged and can be extended further to as shown in Figure 4 more multi-layered.With reference to Fig. 4, deposit the 3rd OLED ray structure 12`` on third electrode 14`.The 4th electrode 16` that is electrically connected with second electrode 16 is positioned on the 3rd OLED ray structure 12``.Sealing lid (encapsulating cover) 18 is positioned on the 4th electrode 16`.Can at random expand this step of the OLED ray structure 12 that repeats to be provided with between the common in pairs electrode pair 14 and 16 that connects of this each electrode that replaces.In order to use DC operation, the polarity of OLED ray structure can be replaced with down a kind of structure from a kind of structure, all thus OLED structures are simultaneously luminous.In this arrangement, oled layer connects in the electric mode of parallel connection, and all OLEDs press the equidirectional alignment.This arrangement has a kind of advantage, if promptly an OLED ray structure inefficacy is opened a way, and other OLED ray structure still can work on.Just be not subjected to the influence of the polarity of OLED ray structure from the direction of light of OLED lamp output.
If drive the OLED lamp with above-mentioned arrangement with alternating current, so all OLED ray structures are just only simultaneously luminous in a half period of alternating current.This will produce substantial flicker.A kind of method that reduces flicker is the polarity of arranging the OLED ray structure, and some ray structures in them are all luminous in each half period of alternating current thus.Just can obtain this structure by in laminated body, constituting all OLED ray structures in an identical manner.This arrangement has identical advantage, if promptly an OLED structure is opened a way, and other OLED ray structure still can work on.Observe, drive attendant advantages with alternating current with the life-span that prolongs the OLED lamp.
Just can control the colour temperature of multilayer OLED lamp so that the light of emission different colours by the material of selecting to use in the OLED ray structure.
As mentioned above, light source 10 common emissions are passed substrate 20 and are sealed and cover 18 light.In an interchangeable embodiment of the present invention, can or seal at substrate 20 to cover and on one of 18 the reflector is set so that light is directly passed respectively seals lid or substrate, light source is just only luminous from a side thus, therefore just can control the direction of light source.Selectively, the electrode of deposit or the contiguous electrode of sealing lid can be reflexive on substrate.
With reference to figure 5 and 6, the present invention is particularly suitable for simple manufacturing process.By deposition apparatus is provided, deposition materials on only dividing in the left side of substrate and core, core or center and right side just can constitute simple manufacturing process.As shown in Figure 6, a plurality of deposition station 70 can along thin plate conveyer belt (webtransport) 72 arrange in case in turn on substrate 20 deposition materials 74, produce a series of OLED lamp successively thus.
The present invention can be applied in continuous conveyer belt (web) technology, forms the OLED lamp in continuous conveyer belt technology on continuous conveyer belt substrate.As shown in Figure 5, on substrate, form the OLED lamp by periodically interrupting deposition of electrode and luminescent material.Cover material is sealed in deposit continuously, and each OLED lamp 56 can be separated from continuous substrate 50 by the substrate between the cutting OLED lamp.By line or perforation line separated part 60 between the lamp just can be set, and each lamp can keep connecting before using just by along ruling or perforation line divides and by artificially or mechanically from laminated body or coiling body separation.Therefore, just can remove the lamp that each will be used from folding laminated body or in the coiling body, thus economical, provide a plurality of lamps easily.
Advantage of the present invention is strict restriction to shelter the suitable deposit that has just obtained among the zone.For example, can in being with continuously, coating seal coating, and keep the expose portion 52 and 54 of electrode 14 and 16 respectively.By many known method include but not limited to by disclosed mask deposit, overall image among for example US5276380 and the EP0732868 shelter, laser ablation and selection chemical vapor deposition just can realize this sheltering.Usually, shelter with simple image that to cover the zone that does not need deposit just enough.As the known method of prior art, can adopt the linear deposit source with deposit seam of arranging to come deposition materials perpendicular to the moving direction of substrate.Can provide by for example known coating technology and seal lid.
In addition, each layer of OLED lamp can carry out deposit continuously on thin plate (web), and cuts out each lamp from thin plate.In the case, each layer of OLED lamp extends to each limit always in the transmission direction of thin plate.For example can be used to form the edge that seals the exposure of thin plate in the same material of sealing lid by each limit is immersed.
Substrate 20 can be rigidity or flexible.Rigid substrate for example glass provides the higher structure of intensity and is generally plane, but the present invention can also adopt flexible substrate for example can form the plastics of different shape.
The present invention has additional advantage, and promptly light source has the compact planar structure that can store effectively, encapsulate and load and transport.
The present invention can be used in conventional field, for example desk lamp, floor-lamp or branch type ceiling lamp widely.In addition, the present invention can use in the plate lighting device of traditional ceiling suspension type.The present invention can also use in utilizing the portable lighting device of DC power supply.
In a preferred embodiment, OLED ray structure 12 is made up of low-molecular-weight OLED material or polymer OLED material, such as but not limited to the US4769292 that licensed to Tang etc. on September 6th, 1988 with licensed to disclosed material among the US5061569 of VanSlyke etc. on October 29th, 1991.
The multiple structure that has each layer wherein can successfully be implemented the present invention.Typical structure is illustrated among Fig. 7 and by substrate 101, anode 103, hole injection layer 105, hole transmission layer 107, luminescent layer 109, electron transfer layer 111 and negative electrode 113 to be formed.These layers will be described in detail following.Should be noted that substrate can replace with close negative electrode or in fact substrate can constitute male or female.Organic layer between anode and negative electrode is commonly referred to organic EL.The main assembly thickness of organic layer is preferably less than 500nm.
The anode of OLED and negative electrode are connected to voltage 250 by electric conductor 260.Have higher positive potential by current potential that provides between anode and the negative electrode so that anode than negative electrode and operate OLED.The hole is injected into organic EL and electronics is injected into organic EL at anode from anode.Sometimes be operated under the AC pattern bias voltage in i.e. some time cycles oppositely and just can realize the device stability that improves when not having electric current to flow as OLED in the AC cycle.A kind of example of AC driving OLED has just been described in US5552678.
OLED device of the present invention typically is arranged on the support substrates, and at described support substrates place, negative electrode or anode contact with substrate.Be commonly referred to hearth electrode with the substrate electrodes in contact.Usually, hearth electrode is an anode, but the present invention is not limited to this structure.Required direction, substrate according to the light of launching can printing opacity or reverberation.In the case, adopt clear glass or transparent plastic usually.By in the application of top electrode, the transmissison characteristic of bottom support is just inessential, so bottom support can printing opacity or reverberation in the EL emission.The substrate of Shi Yonging includes but not limited to glass, plastics, semi-conducting material, silicon, pottery and circuit board material in the case.Certainly, these device architectures must be set to the top electrode of printing opacity.
When anode 103 is passed in EL emission, anode just should be transparent or substantial transparent launch so that help.Usually the anode material that adopts is tin indium oxide (ITO), indium zinc oxide (IZO) and tin oxide in the present invention, but other metal oxide also can be worked, and other metal oxide includes but not limited to zinc oxide, magnesium oxide indium and the nickel oxide tungsten of adulterated al or indium.Except these oxides, can adopt metal nitride for example gallium nitride, metal selenide for example zinc selenide and metal sulfide for example zinc sulphide as anode.For the application that cathode electrode is only passed in EL emission, the transparent characteristic of anode is just inessential and can adopt the conducting metal of any transparent or reflection.The conductor example of this application includes but not limited to gold, iridium, molybdenum, palladium and platinum.Typical anode material, transparent or other type all have 4.1eV or bigger work function.Required anode material carries out deposit by for example evaporation of method, sputter, chemical vapor deposition or the electrochemical method that is fit to usually.Selectively, can before being provided, other each layer polish anode so that reduce surperficial roughness, thus short circuit minimized or improve reflectivity.
Though always not necessary, a hole injection layer 105 is provided between anode 103 and hole transmission layer 107 usually.Hole-injecting material forms characteristic as the film that improves organic layer subsequently and is easy to the hole is injected into hole transmission layer.The suitable material that uses in hole injection layer includes but not limited to the fluorocarbon polymer of porphyrin compound, the plasma deposition described in US6208075 described in US4720432 and m-MTDATA (4 for example, 4`, 4``-three [(3-tolyl) phenylamino] triphenylamine) some aromatic amines.In addition, the hole-injecting material that report uses in organic EL device is described among EP0891121A1 and the EP1029909A1.
Hole transmission layer 107 contains at least a hole transport compound, aromatic nitrile base for example, the latter can be understood as a kind of like this compound, this compound contain at least one only with trivalent nitrogen atom and at least one aromatic ring of carbon atom bonding.A kind of form of aromatic nitrile base can be an arylamine, as single arylamine, diaryl-amine, three arylamine or polyarylamine.People such as Klupfel are at US3, have described the example of monomer three arylamine in 180,730.People such as Brantley are at US3, disclose other three arylamine that are suitable in 567,450 and US3,658,520, and this three arylamine is by one or more vinyl substituted bases and/or comprise that at least one contains the group of active hydrogen.
A more preferred class aromatic nitrile base comprises two aromatic nitrile base parts at least, and is as at US4, disclosed in 720,432 and US5,061,569.Hole transmission layer can be formed by one or more aromatic uncle amine compounds.Available aromatic nitrile base is exemplified below:
1, two (4-two-right-tolyl aminobenzene) cyclohexanes of 1-
1, two (4-two-right-tolyl the aminobenzene)-4-cyclohexylbenzenes of 1-
4,4 '-two (diphenylamino) four benzene
Two (4-dimethylamino-2-tolyl)-toluene
N, N, N-three (p-methylphenyl) amine
4-(two-right-tolyl amino)-4 '-[4 (two-right-tolyl amino)-styryl] stibene
N, N, N ', N '-four-right-tolyl-4-4 '-diaminourea hexichol
N, N, N ', N '-tetraphenyl-4-4 '-diaminourea hexichol
N, N, N ', N '-four-1-naphthyl-4-4 '-diaminourea hexichol
N, N, N ', N '-four-2-naphthyl-4-4 '-diaminourea hexichol
The N-phenyl carbazole
4,4 '-two [N-(1-naphthyl)-N-phenylamino] hexichol
4,4 '-two [N-(1-naphthyl)-N-(2-naphthyl)-amino] hexichol
4,4 "-two [N-(1-naphthyl)-N-phenylamino] right-triphen
4,4 '-two [N-(2-naphthyl)-N-phenylamino] hexichol
4,4 '-two [N-(3-dihydro-acenaphthylene base)-N-phenylamino] hexichol
1, two [N-(1-the naphthyl)-N-phenylamino] naphthalenes of 5-
4,4 '-two [N-(9-anthryl)-N-phenylamino] hexichol
4,4 '-two [N-(1-anthryl)-N-phenylamino]-right-triphens
4,4 '-two [N-(2-phenanthryl)-N-phenylamino] hexichol
4,4 '-two [N-(8-fluoranthene base)-N-phenylamino] hexichol
4,4 '-two [N-(2-pyrenyl)-N-phenylamino] hexichol
4,4 '-two [N-(2-aphthacene base)-N-phenylamino] hexichol
4,4 '-two [N-(2-perylene base)-N-phenylamino] hexichol
4,4 '-two [N-(the cool base of 1-)-N-phenylamino] hexichol
2, two (two-right-tolyl amino) naphthalenes of 6-
2, two [two-(1-naphthyl) amino] naphthalenes of 6-
2, two [N-(1-naphthyl)-N-(2-naphthyl) amino] naphthalenes of 6-
N, N, N ', N '-four (2-naphthyl)-4-4 "-diaminourea-right-triphen
4,4 '-two N-phenyl-N-[4-(1-naphthyl)-phenyl] and amino } hexichol
4,4 '-two [N-phenyl-N-(2-pyrenyl) amino] hexichol
2, two [N, N-two (2-naphthyl) amino] fluorenes of 6-
1, two [N-(1-the naphthyl)-N-phenylamino] naphthalenes of 5-
4,4 ', 4 " [(3-tolyl) phenylamino] triphenylamine-three
Another kind of useful hole mobile material comprises the polycyclc aromatic compound described in EP1009041.Can use and contain three amino more than two arylamine, comprise the oligomer material.In addition, also can use the hole mobile material of polymerization, as: poly-(N-vinylcarbazole) (PVK), polythiophene, polypyrrole, polyaniline and for example poly-(3, the 4-Ethylenedioxy Thiophene)/poly-(4-styrene sulfonate), be also referred to as the copolymer of PEDOT/PSS.
As US4, that is described in detail in 769,292 and US5,935,721 is the same, and the luminescent layer in the organic EL (LEL) comprises a kind of luminous or fluorescent material, and electronics and hole produce electroluminescence in this region composite.Luminescent layer can be made up of single material, but more commonly is made up of the host material that is doped with auxiliary compounds or mixture, and light emission is mainly from dopant and can be any color.Host material in the luminescent layer can be electron transport material defined below, above-mentioned qualification hole mobile material or other one or more can make the composite material of electronics and hole-recombination.Dopant is selected from the high fluorescence dyestuff usually, but also can use phosphorescent compound, for example, and the transition metal complex of putting down in writing among WO98/55561, WO00/18851, WO00/57676 and the WO00/70655.Typically the dopant with 0.01~10% weight is applied in the host material.Host material also can use polymeric material, as: poly-fluorenes and poly-aromatic ethylene [as: poly-(right-styrene), PPV].In this case, the low-molecular-weight dopant is dispersed in the matrix material with molecular forms, or by copolymerization micro constitutent dopant is added in the host polymer.
When selecting a kind of dyestuff as dopant, an important relation is a comparison band gap potential energy, it characterized the highest molecular orbital that occupies of molecule and the minimum molecular orbit that do not occupy between energy difference.In order to realize effective energy delivery from host material to dopant molecule, the condition an of necessity is the band gap that the band gap of dopant is less than host material.It is enough high that the main triplet energies level of host material is wanted, and makes energy be delivered to dopant from host material, and this is also very important for the phosphorescence luminous element.
The main material of known use and light emitting molecule include, but are not limited at US4, and 768,292, US5,141,671, US5,150,006, US5,151,629, US5,405,709, US5,484,922, US5,593,788, US 5,645,948, US5,683,823, US5,755,999, US5,928,802, US5,935,720, US5, discloseder main materials and light emitting molecule in 935,721 and US6,020,078.
The metal complex of oxine (oxine (oxine)) and similar derivative thing thereof have been formed the main compound that a class can be used for realizing luminescence generated by light.Available chelating oxine compound is exemplified below:
CO-1: three oxine aluminium [having another name called three (oxine) aluminium (III)]
CO-2: two oxine magnesium [having another name called two (oxine) magnesium (II)]
CO-3: two [benzene the f}-8-oxyquinoline] zinc (II)
CO-4: two (2-methyl-oxine) aluminium (III)-mu-oxo-two (2-methyl-oxine) aluminium (III)
CO-5: three oxine indiums [having another name called three (oxine) indium]
CO-6: three (5-methyl oxine) aluminium [having another name called three (5-methyl-oxine) aluminium (III)]
CO-7: oxine lithium [having another name called (oxine) lithium (I)]
CO-8: oxine gallium [having another name called three (oxine) gallium (III)]
CO-9: oxine zirconium [having another name called four (oxine) zirconium (IV)]
Other kind can with host material comprise the derivative of anthracene, as US5,935, in 721 the record 9,10-two-(2-naphthyl) anthracene and derivative thereof, US5, the distyrene arylene derivatives and the indole derivatives of record in 121,029, for example: 2,2 ', 2 "-(1,3; the 5-phenyl) three [1-phenyl-1H-benzimidazole], but be not limited to this.Carbazole derivates can be specially adapted to the host material of phosphorescence luminous element.
Available fluorescent dopants comprises derivative, aphthacene, xanthene, perylene, rubrene, cumarin, the rhodamine of anthracene, with derivative, fluorene derivative, peri-bridge anthrene derivative, Yin Bing perylene derivative, two (azine) amine boron compound, two (azine) methane compounds and the quinolone compounds of quinacridine, dicyan methyl pyrylium compound, thiapyran compound, polymethine compound, pyrans and thiapyran compound, but be not limited to this.
The preferred film formation material that is used to form the electron transfer layer 111 of organic EL of the present invention is metallo-chelate oxine (oxinoid) compound, and it comprises oxine (oxine) self chelate (being also referred to as oxine (8-quinolinol) or oxine (8-hydroxyquinoline) usually).This compounds helps to inject and transmission electronic, shows high-performance, and is easy to make when forming film.The example of oxine compound has been enumerated in the front.
Other electron transport material comprises as US4, disclosed various butadiene derivatives and as US4 in 356,429, disclosed various heterocycle luminescent substances in 539,507.Indoles and triazine also can be used as electron transport material.
When the light of emission only when the anode, the negative electrode 113 of Shi Yonging can be made up of the electric conducting material of any kind of almost in the present invention.The expectation material has good film and forms characteristic so that guarantee to form excellent contact with following organic layer, promote the injection of electronics and have good stable under low-voltage.The cathode material that uses comprise usually low workfunction metal (<4.0eV) or metal alloy.A kind of preferred cathode material is by the Mg:Ag alloy composition, and wherein Yin percentage is in the scope of 1-20%, described in US4885221.Another kind of suitable cathode material comprises bilayer, and this bilayer comprises that (for example, ETL) the thin electron injecting layer (EIL) of contact covers this electron injecting layer with thicker layer of conducting metal with organic layer.Here, EIL preferably includes the metal or the slaine of low work function, and if so thicker cover layer must not have low work function.A kind of negative electrode like this is made up of the LiF thin layer under the thicker Al layer, described in US5677572.The cathode material component of other use includes but not limited at US5059861; Those disclosed material in 5059862 and 6140763.
When the light of emission passed through negative electrode, negative electrode just must be transparent or approximate transparent.For this application, metal just must thinly or necessary adopt the transparent conductive oxide or the combination of these materials.Selectable transparent cathode is disclosed among US4885211, US5247190, JP3234963, US5703436, US5608287, US5837391, US5677572, US5776622, US5776623, US5714838, US5969474, US5739545, US5981306, US6137223, US6140763, US6172459, EP1076368, US6278236 and the US6284393 in further detail.Typically come the deposit cathode material by evaporation, sputter or chemical vapor deposition.
In some instances, layer 109 and 111 can at random be combined into as the individual layer of supporting luminous and electron transport function.Known light-emitting dopant can being added in the hole transmission layer as main material in the prior art.In order to produce the OLED of emission white light, multiple dopant can be added in one or more layers, for example by the material of emission blue light and material and the combination of materials of red-emitting, the perhaps combination of materials of red-emitting, green glow and blue light of the material of launching gold-tinted, the dark blue light of emission.The device of emission white light for example, has just been described in EP1187235, US20020025419, EP1182244, US5683823, US5503910, US5405709 and US5283182.
In device of the present invention, can adopt the extra play of instructing in the prior art for example electronics or hole blocking layer.Hole blocking layer is generally used for improving the efficient of phosphorescent emissions device, for example described in the US20020015859.
The above-mentioned organic material that relates to is adapted to pass through vapor-phase process and for example distils deposit, but can for example carry out deposit so that promote the formation of film from the solvent with optional binder from liquid.If material is a polymer, utilizes the solvent deposit but also can adopt for example sputter or of other method from the thermal conversion of donor plate (donor sheet).Will can be from distillation " ship ware " evaporation by the material of distillation deposit, distillation " ship ware " is made up of tantalum material usually, promptly described in US6237529, perhaps at first on the donor plate, carry out surplus deposited, distil at the most close substrate place then.Each layer with composite material can use each ship ware that independently distils, or pre-mixed material is then from single ship ware or the coating of donor plate.
Most of OLED devices are to steam or oxygen or both's sensitivity, therefore for example seal with drier simultaneously in nitrogen or the argon gas at inert gas environment usually.Drier for example comprises alumina, red bauxite, calcium sulfate, clay, silica gel, zeolite, alkali metal oxide, alkaline earth oxide, sulfate or metal halide and perchlorate.Encapsulating method and drier include but not limited to those materials described in the US6226890.In addition, for known employing barrier layer in the encapsulation agent prior art for example SiOx, Teflon and alternately inorganic/polymeric layer.
In order to improve the required characteristic of OLED device, OLED device of the present invention can adopt various known optical effects.This comprises the thickness of optimizing each layer so that produce maximum light emission, and the dielectric mirror structure is provided, and anti-dazzle is provided on lamp or the anti-reflective coating application is provided, and the polarization medium is provided on lamp, or colored, neutral colourity are provided on lamp, or colored deflection filter is provided.Can on the part of lid or lid, filter, polarizer and anti-dazzle or anti-reflective coating application be set.

Claims (12)

1, a kind of OLED lamp comprises:
A) substrate;
B) the non-pixel type OLED that on this substrate, forms, this OLED comprises:
I) first electrode that on this substrate, forms and extend to the second relative edge of this substrate from first edge of this substrate,
That ii) on the top of first electrode, form and cover the OLED ray structure of this first electrode, this OLED ray structure extends a part of leaving exposed state that surmounts described first electrode and only make first electrode at first edge that is close to this substrate to second edge of described substrate, and
Iii) on this OLED ray structure, surmount described first electrode and form second electrode that contact with this OLED ray structure, and this second electrode extension surmounts this OLED ray structure and also directly forms on this substrate to second edge of this substrate to described second edge; And
E) be positioned at the lid of sealing on this non-pixel type OLED, it makes a part of leaving exposed state of first electrode and second electrode, is used to form electrically contacting of lamp.
2, according to the OLED lamp of claim 1, wherein substrate is a nonbreakable glass.
3, according to the OLED lamp of claim 1, wherein substrate is a flexible material.
4, according to the OLED lamp of claim 1, wherein sealing lid is airtight capping.
5, according to the OLED lamp of claim 1, wherein sealing lid is overlay.
6, according to the OLED lamp of claim 1, wherein substrate is a rectangle, and electrode and OLED luminescent layer extend to the opposed edges of substrate on the direction perpendicular to first edge and second edge, and bag is sealed on, and opposite edges are neighbouring extends.
7, according to the OLED lamp of claim 1, wherein substrate, electrode and to seal lid be transparent.
8, according to the OLED lamp of claim 1, also be included in the second non-pixel type OLED that forms on the opposite side of substrate, and seal the lid be positioned on the second non-pixel type OLED.
9, according to the OLED lamp of claim 1, also comprise the reflector, be used for a side direct light from substrate.
10, according to the OLED lamp of claim 1, wherein non-pixel type OLED further comprises:
Iv) the 2nd OLED ray structure is formed on the top of second electrode and is positioned on the OLED ray structure; And
V) third electrode is formed on the 2nd OLED ray structure and is electrically connected to first electrode.
11, according to the OLED lamp of claim 10, wherein non-pixel type OLED further comprises:
Vi) the 3rd OLED ray structure is formed on the top of third electrode and is positioned on the 2nd OLED ray structure; And
Vii) the 4th electrode is formed on the 3rd OLED ray structure and is electrically connected to second electrode.
12, a kind of method of making the OLED lamp comprises step:
A) provide a substrate;
B) form first electrode on this substrate, first electrode extends to the second relative edge of this substrate from first edge of this substrate;
C) that form on the top of first electrode and cover the non-pixel type OLED ray structure of this first electrode, this non-pixel type OLED ray structure extends a part of leaving exposed state of first electrode that surmounts described first electrode and only make first edge of contiguous this substrate to second edge of described substrate;
D) on the OLED ray structure, surmount described first electrode and form second electrode that contact with this OLED ray structure, and this second electrode extension surmounts this OLED ray structure to second edge of this substrate and also directly forms on this substrate to described second edge;
E) be provided with on first electrode, OLED ray structure and second electrode and seal lid, this seals the expose portion that lid keeps first electrode and second electrode, is used to form and the electrically contacting of lamp.
CNB031327508A 2002-09-30 2003-09-30 OLED lamp and manufacture method thereof Expired - Lifetime CN100570923C (en)

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