CN100570428C - Utilize spatial light modulator of integrated circuit actuator and production and preparation method thereof - Google Patents
Utilize spatial light modulator of integrated circuit actuator and production and preparation method thereof Download PDFInfo
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- CN100570428C CN100570428C CNB2004100579701A CN200410057970A CN100570428C CN 100570428 C CN100570428 C CN 100570428C CN B2004100579701 A CNB2004100579701 A CN B2004100579701A CN 200410057970 A CN200410057970 A CN 200410057970A CN 100570428 C CN100570428 C CN 100570428C
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- actuating device
- spatial light
- individually actuating
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
- G02B26/0858—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting means being moved or deformed by piezoelectric means
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S359/00—Optical: systems and elements
- Y10S359/90—Methods
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Abstract
Spatial light modulator (SLM) comprises the integrated circuit actuator that can utilize photoetching technique or other similar techniques to make.This actuator comprises actuating unit, can constitute this actuating unit by piezoelectric.Electrod-array is connected to two sidewalls of actuating unit.Each electrod-array can have one or more electrode part.The reflection device array constitutes SLM.
Description
Technical field
The present invention relates to spatial light modulator, the present invention relates more particularly to reflective spatial light modulator.
Background technology
Spatial light modulator (SLM) (for example, digital micromirror device (DMD), LCD (LCD) etc.) generally includes and can Be Controlled be in the state of being switched on or switched off requires figure with formation active area array (for example, catoptron district or transmission area).The algorithm predetermined and storage in advance of Exposure mode as requested is used to switch on and off active area.
Traditional reflective SLM is used as active area with catoptron (for example, reflection type unit, pixel etc.).Utilization is tilted elastic device (for example, lever arm) or the circuit of mobile mirror is controlled catoptron.For example, can adopt the static inclined mirror.Tilt or move light is propagated to catoptron, to reflect light to target, perhaps from target reflection light.Recent years, SLM comprises gradually than small reflector, to realize the resolution of the rising that they require.Yet,, limited and further reduced mirror size according to current manufacturing technology and employed material.For example, the width of current mirror or diameter can be as small as about 16 microns.Using the typical environment of SLM can be photoetching process, maskless lithography method, Biological Technology, projection TV etc.
Photoetching technique is the process that is used for producing feature pattern on substrate surface.This substrate can comprise the substrate that is used to make flat-panel monitor (for example, LCD), circuit board, various integrated circuit etc.The substrate that often uses during these are used is semiconductor wafer or glass substrate.Although in order to say something, write this explanation according to semiconductor wafer or flat-panel monitor, the those of skill in the art in the present technique field understand that this explanation can also be applied to other the known type substrates of those of skill in the art in the present technique field.
During carrying out photoetching, disk is placed on the disk carriage, utilizes the exposure optics be positioned at lithographic equipment, to the image of this disk exposure projections on the disk surfaces.Although under the photoetching situation, use exposure optics,, can use dissimilar exposure sources according to application-specific.For example, the those of skill in the art in the present technique field are known, and x ray, ion, electronics or photon photoetching technique all require different exposure sources.Only, photolithographic specific examples is described at this in order to say something.
Projected image makes the layer that is deposited on the disk surfaces, and for example the characteristic of photoresist changes.The feature pattern that projects on the disk between these variations and exposure period is corresponding.After exposure, can etching this layer, to produce patterned layer.The feature pattern that projects on the disk between this figure and exposure period is corresponding.Then, utilize this patterned layer, eliminate or further handle disk levels structural sheet, for example exposed portion of conductive layer, semi-conductive layer or insulation course.Then, rise with other step 1 and to repeat this processing procedure, on this plane at disk, or each layer gone up and formed the feature pattern that requires.
The substep scanning technique is worked with the projection optical system with narrow imaging slit.Not the single exposure whole wafer, but once to each zone on the disk.This is by with in scan period, the mode that the imaging slit is moved on the zone, and removable wafer and cross curve are realized simultaneously.Then, must between regional exposure, not make wafer level form ladder simultaneously, with a plurality of copies of exposure cross curve figure on disk surfaces.Like this, the picture quality that projects on the disk is the highest.
The conventional lithography system and method forms image on semiconductor wafer.This system has the photoetching of being used for chamber usually, and this photoetching chamber is used to hold the equipment that is used for carries out image imaging process on semiconductor wafer.According to the wavelength of employed light, this designed photoetching chamber has different gaseous mixture and/or vacuum tightness.It is indoor that cross curve is positioned at photoetching.Light source (being positioned at the outside of system) sends light beam by the image outline and second optical system on optical system, the cross curve, interacts with semiconductor wafer then.
On substrate, make device and need a plurality of cross curve.During fabrication, the cost of these cross curve consumption and the time that takies are more and more longer, because the accurate tolerance that the size of feature pattern and little feature dimensions require.In addition, before being worn, cross curve can only be used for the special time cycle.If cross curve not in the specified tolerances scope, perhaps when cross curve is damaged, produces fringe cost usually.Therefore, adopt the cost of the disk manufacturer of cross curve to get more and more, and might expensively must cannot afford.
In order to overcome these defectives, developed maskless (for example, directly write, numeral etc.) etching system.The maskless system utilizes SLM to replace cross curve.Yet along with the size of feature pattern is more and more littler, traditional SLM no longer can realize the resolution that requires.
Therefore, need a kind of can providing to be used for the very system and method for the SLM of high resolving power environment.
Summary of the invention
Embodiments of the invention provide a kind of integrated circuit low-light electro-mechanical system (MOEMS) spatial light modulator, and this spatial light modulator comprises: the reflection device array; Integrated circuit actuator has the actuating unit array; And first electrod-array and second electrod-array, be connected to the both sides of each actuating unit.Electric energy can make actuator material (for example, piezoelectric) expand or shrink, and moves this reflection device in respective direction like this.
Another embodiment of the present invention provides a kind of method that comprises the following steps.To MOEMS lsi space photomodulator irradiates light with reflection mirror array.The power backup utmost point by coupled utilizes integrated circuit actuator, mobile mirror.According to the interactional light of catoptron, form wave front.
Describe the structure and the operational process of other embodiments of the invention, feature and advantage and various embodiments of the present invention below with reference to the accompanying drawings in detail.
Description of drawings
Accompanying drawing is incorporated herein the part of this instructions as this instructions, and it illustrates the present invention, and it and explanation one be used from the further explanation principle of the invention, and makes the those of skill in the art in the correlative technology field can realize and use the present invention.
Fig. 1 illustrates the part according to the SLM of the embodiment of the invention;
Fig. 2 illustrates the part according to the SLM of the embodiment of the invention;
Fig. 3 illustrates the part according to the SLM of the embodiment of the invention;
Fig. 4 illustrates the process flow diagram that is used to make according to the method for the SLM of the embodiment of the invention;
Fig. 5 illustrates the process flow diagram that is shown specifically each step of carrying out among Fig. 4 according to an embodiment of the invention;
Fig. 6,7 and 8 illustrates the various electrode patterns according to various embodiments of the invention;
Fig. 9 illustrates the part according to the SLM of the embodiment of the invention.
Now, the present invention will be described with reference to the accompanying drawings.In the accompanying drawings, similarly Ref. No. can represent identical or function on similar unit.In addition, the numeral of the Ref. No. leftmost side can be discerned the accompanying drawing that occurs this Ref. No. within it for the first time.
Embodiment
Although ad hoc structure and arrangement are discussed, should be understood that doing so only is in order to say something.Those of skill in the art in the correlative technology field understand, in essential scope of the present invention, can also adopt other structure and arrangement.Those of skill in the art in the correlative technology field understand, also can adopt the present invention in various other used.
MOEMS or MEMS SLM that embodiments of the invention provide a kind of and comprise integrated circuit actuator, can utilize photoetching technique or other similar techniques to make.This actuator comprises the actuating unit that can utilize piezoelectric to make.First and second electrod-arrays are connected to two sidewalls of actuating unit, to provide power to it.Each electrod-array can have one or more electrode part.The reflection device array forms the SLM catoptron, and according to the electric energy of delivering to each electrode, utilizes actuating unit, makes this reflection device array motion.
In a kind of typical environment, in maskless photoetching technology, can utilize SLM to replace cross curve, so that graphic projection is to substrate.In another example, if the shape right and wrong sphere of SLM, then SLM can be used for the projection optical system of lithography tool, to proofread and correct the aberration in the wave front.In another example, SLM can be used for known biomedicine and other Biological Technology environment in correlation technique.In yet another embodiment, SLM can be used for projection TV.In other example, utilize the fine-resolution that realizes by integrated circuit actuator, during pupil was full of, SLM is sigma fixedly, and can be the part that use in dynamic adjustable joint slit, to proofread and correct illuminance uniformity.These all are typical environment, and are not intended to be limited to this.
The bidirectional-movement actuator
Fig. 1 illustrates the part according to the SLM 100 of the embodiment of the invention.In various embodiments, SLM 100 can be integrated circuit low-light electro-mechanical system (MOEMS) SLM or MEMS (micro electro mechanical system) (MEMS) SLM.SLM 100 comprises the substrate 102 with optional heat insulation layer 104.Electrod-array 106 can be connected to heat insulation layer 104 or substrate 102.Actuating unit 108 is connected between electrode 106 and another electrod-array 110.Reflection device 112 is connected to electrod-array 110.In this structure, when by electrode 106 power supply, actuating unit 108 can be at the mobile reflection device 112 of both direction (for example, upper and lower to).This can be called as similar piston motion.In one embodiment, displacement can be+/-1/4 λ that wherein λ is the wavelength of irradiates light (not shown).In other embodiments, this distance can be littler, 1/8 or 1/16 λ for example, perhaps any other value.
Although do not specifically illustrate, electrode 106 can be connected to conductive devices (for example, lead), so that electrode 106 is connected to controller or power supply.This lead can pass through substrate 102, perhaps is directly connected to substrate 106.The layout of this wire interconnects and manufacture process are well-known in the manufacturing technology field.
Utilize piezoelectric to make each actuating unit 108 respectively.For example, can use lead zirconate titanate (PZT), zinc paste (ZnO), Kynoar (PVDF) thin polymer film etc. (below all material with term piezoelectric and formation piezoelectric is called " PZT ").
Integrated circuit actuator unit 108 is with linear mode work, and it provides phase shift, and produces jamming pattern, so that more fine-resolution to be provided.In addition, compare with traditional actuators, the process of making integrated circuit actuator unit 108 is simple, because in the process that forms this integrated circuit actuator, integrated circuit actuator does not require complicated static photoetching technique.
According to the height (for example, thickness) of each actuating unit 108 and/or the interval between the actuating unit 108, each actuating unit 108 can disconnect mutually or link to each other, and is for example, described below with reference to Fig. 2-3.This is based on requiring to use SLM 100.
Fig. 9 illustrates the part according to the SLM 900 of the embodiment of the invention.In this embodiment, the SLM 900 of shape such as, convex integral curved, sphere, non-sphere in order to form, actuating unit 108 can have not take the altitude.Obviously, can also form spill.In addition, actuating unit 108 can be set to each position on the substrate 102.The height of actuating unit 108 and/or position one or both of are all indefinite can to provide the various diffraction patterns that utilize reflection device 112 to form.
With reference to figure 1, then, continue with reference to figure 9, can dispose reflection device 112 to form different shape, for example, rectangle, circle, star are penetrated shape, non-sphere etc.Reflection device 112 can be made of silicon, gallium arsenide, gallium nitride, glass etc.Can revise integrated circuit actuator structure and/or size so that the response of requirement to be provided at catoptron, and can high-frequency work (for example, 50-100kHz) during, use this integrated circuit actuator.
Fig. 2 illustrates the part according to the SLM 200 of the embodiment of the invention., and comprise outside the conductive structure 204 between actuating unit 108 and electrode 110 that SLM 200 is identical with structure with the course of work of SLM 100 except SLM 200 comprises piezoelectric structure 202 between actuating unit 108 and electrode 106.These two structures 202 and 204 can make adjacent actuators unit 108 link together (perhaps control together), thereby once control one group of reflection device 112.We understand, can change the given shape and/or the size of structure 202 and 204 according to the requirement that realizes particular design.
In other embodiment (not shown), bottom electrode layer can be an electrode or each rows of electrodes on the bottom, but not each electrode 106.Utilize this quantity that is electrically connected can be reduced to minimum.Can omit heat insulation layer 104 or its part.A control line can be connected to electrod-array 110, rather than be connected to an electrode.
The four directions is to motion actuator
Fig. 3 illustrates the part according to the SLM 300 of the embodiment of the invention.Except each electrode 106 comprised two part 106A and 106B of independent control respectively, SLM 300 was identical with SLM 100 and 200.According to two electrode part 106A that use and 106B, actuating unit 108 can make reflection device 112 move in 4 directions (for example, upper and lower, take back, take over).Only when once an electrode part 106A or 106B being powered up, realize this situation.For example, electrode part 106A is powered up and will make actuating unit 108 below or upper right side inclination (shown in skeleton view) left, make reflection device 112 so again with same direction motion.When electrode 106B was powered up, situation was opposite.
We understand, can utilize closed loop position control process control SLM 100,200 or 300.Can utilize each actuating unit 108 to measure electric capacity respectively, because each PZT is an insulator substantially.Measure capacitance variations and can predict how many actuating units 108 moved, can predict so again how many reflection devices 112 moved.This can be used for confirming to have taken place motion.
In addition, because PZT, there is hysteresis phenomenon in each device.If SLM 100,200 or 300 adopts pre-defined algorithms also to repeat this algorithm, but then each actuating unit 108 has repeatable position respectively, but so each reflection device 112 also have repeatable position.Each when mobile at it, can utilize correct algorithm to repeat to be provided with the PZT material, so that very accurately repeat reading location.
Utilize integrated circuit actuator to make the method for SLM
Be a typical treatment process 400 that can be used to form SLM 100 or 900 below.We understand that within the scope of the present invention, expection can also be adopted now known or many other processing procedures following exploitation, that be used to form integrated circuit.
Fig. 4 illustrates the process flow diagram that is used to make according to the method 400 of the embodiment of the invention.In step 402, on substrate, form the conductive interconnection figure.In step 404, on the conductive interconnection figure, form a plurality of piezoelectric units.In step 406,, form each electrode in the end of a plurality of piezoelectric units.In step 408, on the electrode of the end that is positioned at piezoelectric unit, form catoptron.
Fig. 5 illustrates the process flow diagram (step 502-522) that is illustrated in detail in according to each step of carrying out in the method 400 of the embodiment of the invention.
In step 502, this step is relevant with step 402, (for example utilizes suitable conductor, nickel etc.) (for example to substrate 102, silicon, sapphire and silicon on sapphire etc.) the interconnected electroplating figure, so that electrode 106 (for example, being connected to each ohm connection of the PZT layer 108 that forms afterwards) to be set.
In step 504, this step is relevant with step 404, can utilize other method of deposition, spraying, vaporization, plating or any known or following exploitation, forms PZT material film 108.According to the application-specific of SLM 100, can require the layer of several micron thickness.
In step 506, this step is relevant with step 406, can form top conductor layer 110, connects PZT actuator 108 is provided ground plan.
In step 508, can be coated with the material that is used to form reflection device 112.In step 510, for example, can utilize the resist that has reflector pattern, exposes in step 512 afterwards, the material of spraying reflection device 112.In step 514, this resist can develop.In step 516, the mirror layer zone of can exposing should the zone with etching.Can select reflector size, so that each reverberator 112 has a PZT actuator 108.
In one embodiment, can utilize the not masking regional of anisotropic etch techniques etching reflection device/PZT layer.Form catoptron/array of actuators like this, and significantly reduce at etched actuator.The example of this technology can comprise that chemistry quickens plasma etch techniques, spraying technology, ion milling etc.In another embodiment, can utilize laser ablation to separate each device/PZT unit.
In step 518, can eliminate the residue resist.
Step 520-522 is an optional step, does not specifically illustrate among Fig. 4.
In step 520, can carry out polishing, so that the flat surfaces that has the actuator figure on it to be provided.
In step 522, can encapsulate and/or weld SLM 100.
We understand, can utilize known other equivalent process step of those of ordinary skill and/or other treatment step in proper order in the correlative technology field, form actuating unit 108.
In one embodiment, actuating unit and associated reflections device can have little of about 1 micron diameter or width, and this size is less than only little of about 16 microns traditional actuators usually.This is to utilize said integrated circuit manufacturing technology (for example, photoetching technique) to realize.We understand, along with the progress of integrated circuit technique, can make the actuating unit and/or the catoptron of minor diameter more or width.Therefore, can make the very SLM of high definition, the environment that the SLM of this very high definition can be used for unusual short wavelength (for example, EUV).We understand, in the future, along with development of technology, can change the size of catoptron and the scope of density, and they are not limited only to typical case.
Electrical patterns
Fig. 6 to 8 illustrates the various electrode patterns according to various embodiments of the invention.According to the SLM 100 that uses and/or be used to control the coordinate system of SLM 100, can use various electrode patterns.Employed electrode pattern is determined the degree of freedom of SLM 100.We understand, shown in these accompanying drawings and electrode pattern discussed above only be example, and do not mean that it is whole.Can also adopt other electrode pattern, and these electrode patterns also within the scope of the present invention.For example, can utilize the electrode of a large amount of arbitrary placements that the rotating shaft position or the rotating shaft of any requirement are provided.This is to use the result of integrated circuit actuator fully.
Fig. 6 is the vertical view of the figure 600 of first electrod-array 106 on the actuating unit 108 or second electrod-array 110.Figure 600 makes SLM 100 rotate or rotation around 4 axles.
Fig. 7 is the vertical view of the figure 700 of first electrod-array 106 on the actuating unit 108 or second electrod-array 110.Figure 700 makes SLM 100 rotate or rotation around an axle.
Fig. 8 is the side view according to the part of the SLM 100 of the embodiment of the invention.In read/write architecture, except first electrod-array 106 and second electrod-array 110, third electrode array 800 is connected/deposits to actuating unit 108 with the 4th electrod-array 802.Can make actuating unit 108 and respective reflector part 112 realize X, Y and Z motion like this.Therefore, when electrode 800/802 is powered up, catoptron 112 can about " displacement " or the displacement (in skeleton view).We understand, pair of electrodes 106/110 or 800/802 can only be connected to the both sides of actuating unit 108.
Although above various embodiments of the present invention are illustrated, only should be understood that as an example they to be described, and do not have restricted meaning.Obviously, in essential scope of the present invention, the those of skill in the art in the correlative technology field can carry out various changes aspect form and details.Therefore, the degree of depth of the present invention and range should not be confined to above-mentioned any one exemplary embodiments, and according to claims and equivalent thereof, determine the degree of depth of the present invention and range.
Claims (19)
1. spatial light modulator that is used to receive incident wavefront comprises:
The substrate that the surface is arranged; And
Be formed on the substrate surface and a plurality of independent actuator that side direction is separated from each other, form the array of bidimensional thus, each individually actuating device has catoptron and is formed on the pair of electrodes of each individually actuating device opposite end,
Wherein to each individually actuating device, the formation of catoptron is for when powering up to electrode pair, when individually actuating device mobile mirror work is moved with respect to substrate surface, modulates incident wavefront, produces the wave front of output.
2. according to the spatial light modulator of claim 1, individually actuating device wherein is used to make reflector element to move on both direction, with the modulation incident wavefront.
3. according to the spatial light modulator of claim 1, wherein each individually actuating device comprises and is used to make reflector element to move two electrode parts with the modulation incident wavefront on four direction.
5. according to the spatial light modulator of claim 1, wherein each is formed between individually actuating device and the substrate an electrode in the electrode, and comprises a plurality of electrode parts that separate.
6. according to the spatial light modulator of claim 5, wherein these a plurality of electrode parts that separate are used to allow the individually actuating device to make mirror tilt, with the modulation incident wavefront.
7. according to the spatial light modulator of claim 1, also comprise:
Be arranged on the piezoelectric structure between actuating unit and the electrode; And be arranged on conductive structure between actuating unit and the electrode.
8 spatial light modulators according to claim 1, each wherein adjacent individually actuating device has different height.
9. according to the spatial light modulator of claim 1, about 1/4th optical wavelength of the mobile mirror in each direction of individually actuating device wherein are with the modulation incident wavefront.
10. according to the spatial light modulator of claim 1, wherein dispose the individually actuating device, make catoptron form whole arcuate shape.
11. according to the spatial light modulator of claim 3, catoptron wherein, the height so that the plane that forms with respect to substrate surface changes places the position of setting, makes the incident wavefront of reflection therefrom, the output wave front figure that changes.
12. spatial light modulator according to claim 1, electrode pair wherein, the material of individually actuating device is expanded by similar piston motion mode and shrink, longitudinal axis mobile mirror along the individually actuating device, wherein the reflecting surface of catoptron remains parallel to the plane that forms by substrate surface, with the modulation incident wavefront.
13. according to the spatial light modulator of claim 12, wherein said material comprises one of lead zirconate titanate (PZT), zinc paste (ZnO) or Kynoar (PVDF) polymer film.
14. according to the spatial light modulator of claim 1, catoptron wherein by action respect to one another, produces one of phase shift or conoscope image at least in the output wave front, with the appropriate section of modulation incident wavefront.
15. according to the spatial light modulator of claim 1, individually actuating device wherein interconnects, and makes the motion of each individually actuating device, and is controlled relative to one another, the reflection configuration that the integral body of formation catoptron needs is with the modulation incident wavefront.
16. according to the spatial light modulator of claim 1, substrate surface wherein for the reflecting surface of each catoptron provides public reference planes, moves the reflecting surface of catoptron relative to one another, with the modulation incident wavefront.
17. the spatial light modulator according to claim 1 also comprises:
With the heat insulation layer of substrate coupling, the heat that the electrode pair that is used to dissipate produces.
18. system space photomodulator according to claim 3, wherein power up to electrode pair, the material of individually actuating device is expanded and contraction, mobile mirror is done the motion with respect to each individually actuating device longitudinal axis, wherein the individually actuating device can cause the mirror reflects surface to be moved on four direction, comprise upwards, downwards, take back and take over, with the modulation incident wavefront.
19. a method that forms spatial light modulator, this spatial light modulator receives incident wavefront and modulates incident wavefront, and this method comprises:
Form a plurality of individually actuating devices on substrate surface, these a plurality of individually actuating device side direction are separated from each other, and form the array of bidimensional thus;
On each individually actuating device, form catoptron; With
At the opposite two ends of individually actuating device, form electrode;
Wherein to each individually actuating device, the formation of catoptron is for when when electrode pair powers up, and makes the motion of individually actuating device mobile mirror do with respect to substrate surface.
20. the method for an operating space photomodulator comprises:
On the two dimensional reflection lens array, receive incident wavefront; With
By powering up to electrode pair, move corresponding each catoptron, these electrode pairs are formed on the opposite two ends of a plurality of individually actuating devices, and these individually actuating devices are formed on the substrate surface and side direction is separated from each other, and form the two-dimensional array of individually actuating device thus,
Wherein, when selecting when each electrode pair powers up, each individually actuating device moves the motion that corresponding each catoptron is made relative substrate surface accordingly.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/651,048 US7385750B2 (en) | 2003-08-29 | 2003-08-29 | Spatial light modulator using an integrated circuit actuator |
| US10/651,048 | 2003-08-29 |
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| Publication Number | Publication Date |
|---|---|
| CN1651968A CN1651968A (en) | 2005-08-10 |
| CN100570428C true CN100570428C (en) | 2009-12-16 |
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| CNB2004100579701A Expired - Fee Related CN100570428C (en) | 2003-08-29 | 2004-08-27 | Utilize spatial light modulator of integrated circuit actuator and production and preparation method thereof |
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| US (2) | US7385750B2 (en) |
| EP (1) | EP1510848B8 (en) |
| JP (2) | JP2005078079A (en) |
| KR (1) | KR100642178B1 (en) |
| CN (1) | CN100570428C (en) |
| DE (1) | DE602004026254D1 (en) |
| SG (1) | SG130940A1 (en) |
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Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7385750B2 (en) * | 2003-08-29 | 2008-06-10 | Asml Holding N.V. | Spatial light modulator using an integrated circuit actuator |
| US7414701B2 (en) * | 2003-10-03 | 2008-08-19 | Asml Holding N.V. | Method and systems for total focus deviation adjustments on maskless lithography systems |
| SG110196A1 (en) | 2003-09-22 | 2005-04-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| US7133184B2 (en) * | 2004-06-03 | 2006-11-07 | Samsung Electro-Mechanics Co., Ltd. | Variable grating diffractive light modulator |
| DE102005050515A1 (en) | 2005-10-21 | 2007-04-26 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Surface substrate with electrically conductive structure |
| KR100818194B1 (en) * | 2005-12-14 | 2008-03-31 | 삼성전기주식회사 | Manufacturing method for spatial optical modulator capable of realizing accurate critical dimension of ribbon |
| KR100861055B1 (en) * | 2005-12-14 | 2008-09-30 | 삼성전기주식회사 | Spatial optical modulator having a plurality of drivers |
| KR100782003B1 (en) * | 2005-12-26 | 2007-12-06 | 삼성전기주식회사 | Spatial optical modulator with a junction layer |
| KR100809329B1 (en) * | 2006-09-08 | 2008-03-07 | 삼성전자주식회사 | Photolithography apparatus including a mirror for correcting an aberration of optical illumination system and a mirror including a aberration corrected portion |
| KR100827619B1 (en) * | 2006-10-11 | 2008-05-07 | 삼성전기주식회사 | Method for correcting image distortion and Apparatus thereof |
| WO2009011975A2 (en) * | 2007-05-23 | 2009-01-22 | California Institute Of Technology | Method for fabricating monolithic two-dimensional nanostructures |
| KR100906799B1 (en) * | 2007-06-01 | 2009-07-09 | 삼성전기주식회사 | Driving method for piezoelectric element and optical modulatior and record medium recorded program for realizing the same |
| US7755061B2 (en) * | 2007-11-07 | 2010-07-13 | Kla-Tencor Technologies Corporation | Dynamic pattern generator with cup-shaped structure |
| US8905610B2 (en) | 2009-01-26 | 2014-12-09 | Flex Lighting Ii, Llc | Light emitting device comprising a lightguide film |
| US8253119B1 (en) | 2009-07-27 | 2012-08-28 | Kla-Tencor Corporation | Well-based dynamic pattern generator |
| US8089051B2 (en) * | 2010-02-24 | 2012-01-03 | Kla-Tencor Corporation | Electron reflector with multiple reflective modes |
| US9651729B2 (en) | 2010-04-16 | 2017-05-16 | Flex Lighting Ii, Llc | Reflective display comprising a frontlight with extraction features and a light redirecting optical element |
| US8373144B1 (en) | 2010-08-31 | 2013-02-12 | Kla-Tencor Corporation | Quasi-annular reflective electron patterning device |
| US8913241B2 (en) * | 2012-07-23 | 2014-12-16 | Corning Incorporated | Hyperspectral imaging system and method for imaging a remote object |
| IL224301A0 (en) | 2013-01-17 | 2013-06-27 | Rafael Advanced Defense Sys | A novel mode division multiplexing optical link |
| US11009646B2 (en) | 2013-03-12 | 2021-05-18 | Azumo, Inc. | Film-based lightguide with interior light directing edges in a light mixing region |
| KR102399830B1 (en) * | 2015-03-16 | 2022-05-20 | 삼성디스플레이 주식회사 | electro-active polymer device and method for fabricating the same |
| KR20190100974A (en) * | 2017-01-20 | 2019-08-29 | 어플라이드 머티어리얼스, 인코포레이티드 | Resolution Enhancement Digital Lithography with Anti-Blazed DMDs |
| CN107728312A (en) * | 2017-10-24 | 2018-02-23 | 上海天马微电子有限公司 | A kind of spatial light modulator and display device |
| WO2020142731A1 (en) | 2019-01-03 | 2020-07-09 | Flex Lighting Ii, Llc | Reflective display comprising a lightguide and light turning film creating multiple illumination peaks |
| CN113678036B (en) * | 2019-01-09 | 2024-02-02 | 阿祖莫公司 | Reflective display comprising coupling light guides folded at different folding angles |
| US11513274B2 (en) | 2019-08-01 | 2022-11-29 | Azumo, Inc. | Lightguide with a light input edge between lateral edges of a folded strip |
| US11899198B2 (en) | 2022-05-23 | 2024-02-13 | Applied Materials, Inc. | Controlling light source wavelengths for selectable phase shifts between pixels in digital lithography systems |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63294140A (en) | 1987-05-27 | 1988-11-30 | Canon Inc | Signal processor |
| KR970003448B1 (en) * | 1993-07-21 | 1997-03-18 | 대우전자 주식회사 | An optical path regulating apparatus and an manufacturing method |
| US5585956A (en) | 1993-07-31 | 1996-12-17 | Daewoo Electronics Co, Ltd. | Electrostrictive actuated mirror array |
| US6059416A (en) * | 1993-08-31 | 2000-05-09 | Daewoo Electronics Co., Ltd. | Actuated mirror array and method for the fabricating thereof |
| KR970003465B1 (en) * | 1993-09-28 | 1997-03-18 | 대우전자 주식회사 | Manufacturing method of optical path regulating method |
| CA2137059C (en) * | 1993-12-03 | 2004-11-23 | Texas Instruments Incorporated | Dmd architecture to improve horizontal resolution |
| US5493623A (en) * | 1994-06-28 | 1996-02-20 | Honeywell Inc. | PZT fiber optic modulator having a robust mounting and method of making same |
| JPH08149355A (en) | 1994-11-18 | 1996-06-07 | Honda Motor Co Ltd | Image pickup device for stereoscopic image |
| JPH11142753A (en) | 1997-11-04 | 1999-05-28 | Seiko Epson Corp | Manufacture of deformable mirror device |
| JPH11204799A (en) * | 1998-01-20 | 1999-07-30 | Mitsubishi Electric Corp | High frequency mosfet and manufacture thereof |
| EP0994373A1 (en) * | 1998-09-18 | 2000-04-19 | Ngk Insulators, Ltd. | Display device comprising actuators |
| JP3755378B2 (en) * | 2000-03-29 | 2006-03-15 | セイコーエプソン株式会社 | Optical switching device and image display device |
| JP4404174B2 (en) * | 2000-04-19 | 2010-01-27 | ソニー株式会社 | Optical switching element, switching device using the same, and image display device |
| JP4343393B2 (en) * | 2000-04-26 | 2009-10-14 | キヤノン株式会社 | Light modulation element and projection optical system using the light modulation element |
| JP2002189173A (en) | 2000-08-08 | 2002-07-05 | Olympus Optical Co Ltd | Optical device |
| JP2002157512A (en) * | 2000-11-21 | 2002-05-31 | Fujitsu Ltd | Method and device for distributing advertisement |
| JP3964193B2 (en) * | 2000-12-22 | 2007-08-22 | 日本碍子株式会社 | Matrix type actuator |
| JP2002350749A (en) | 2001-05-23 | 2002-12-04 | Sony Corp | Drive system for optical modulation element and its driving device, and projection system |
| US6639722B2 (en) * | 2001-08-15 | 2003-10-28 | Silicon Light Machines | Stress tuned blazed grating light valve |
| DE50210850D1 (en) | 2002-04-18 | 2007-10-18 | Graf Peter | Optical reflection through an "integral system of micro-reflection elements" |
| US6856449B2 (en) * | 2003-07-10 | 2005-02-15 | Evans & Sutherland Computer Corporation | Ultra-high resolution light modulation control system and method |
| US7385750B2 (en) * | 2003-08-29 | 2008-06-10 | Asml Holding N.V. | Spatial light modulator using an integrated circuit actuator |
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| KR100642178B1 (en) | 2006-11-10 |
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