CN100566157C

CN100566157C - Oscillation device

Info

Publication number: CN100566157C
Application number: CNB2008101262754A
Authority: CN
Inventors: 黄贤生
Original assignee: Etron Technology Inc
Current assignee: Etron Technology Inc
Priority date: 2008-07-28
Filing date: 2008-07-28
Publication date: 2009-12-02
Anticipated expiration: 2028-07-28
Also published as: CN101350610A

Abstract

The present invention discloses a kind of oscillation device, this oscillation device includes: a Voltage Regulator Module, a current generating module and an oscillation module, wherein, this Voltage Regulator Module is to be used for producing a control voltage at an exit point, and this Voltage Regulator Module includes: one first operational amplifier, one first switch element and one first bleeder circuit, and this oscillation module includes: a plurality of switch modules of serial connection, a current mirror module and a plurality of capacitance module.In the disclosed oscillation device of the present invention, the frequency of the oscillator signal that oscillation module is exported can not be subjected to the influence of variability of magnitude of voltage skew, variation of ambient temperature and the manufacture of semiconductor of operating voltage.

Description

Oscillation device

Technical field

The invention relates to a kind of oscillation device, refer to that especially a kind of frequency that can make its oscillator signal of exporting can not be subjected to the oscillation device of influence of variability of magnitude of voltage skew, variation of ambient temperature and the manufacture of semiconductor of operating voltage.

Background technology

Generally speaking, the frequency of the oscillator signal that oscillator in the prior art (oscillator) is exported all is easy to be subjected to the influence of variability of magnitude of voltage skew, variation of ambient temperature and the manufacture of semiconductor of operating voltage usually, therefore the performance of the oscillator of prior art is very responsive for the variation of external environment, so the frequency of its oscillator signal of exporting all can have problem of unstable usually.

Summary of the invention

In view of this, one of purpose of the present invention is to provide a kind of oscillation device, can make the frequency of the oscillator signal that this oscillation device exports can not be subjected to the influence of variability of magnitude of voltage skew, variation of ambient temperature and the manufacture of semiconductor of operating voltage, to solve the above problems.

Claim of the present invention discloses a kind of oscillation device, this oscillation device includes: a Voltage Regulator Module, one current generating module, an and oscillation module, wherein, this Voltage Regulator Module is to be used for producing a control voltage at an exit point, and this Voltage Regulator Module includes: one first operational amplifier, one first switch element, and one first bleeder circuit, wherein, this first operational amplifier is to have first input end point to be coupled to an operating voltage, one second input endpoint and an exit point, and first operational amplifier is to be coupled to one first voltage source; And this first switch element is to have this exit point, one first end points that a control end points is coupled to this first operational amplifier to be coupled to this second input endpoint that this first voltage source and one second end points are coupled to this first operational amplifier; And this first bleeder circuit is to be coupled between this first switch element and one second voltage source, and this first bleeder circuit includes: one first sectional pressure element and one second sectional pressure element, wherein, this first sectional pressure element is this second end points and this exit point that is coupled to this first switch element; And this second sectional pressure element is to be coupled between this exit point and this second voltage source, and in addition, this current generating module is this exit point that is coupled to this Voltage Regulator Module, and is used for producing a reference current according to this control voltage; And this oscillation module is to be coupled between this Voltage Regulator Module and this current generating module, and is used for exporting an oscillator signal according to this reference current and this control voltage.

According to claim of the present invention, it is to disclose a kind of oscillation device, this oscillation device includes: a Voltage Regulator Module, a current generating module and a ring oscillator, and wherein, this Voltage Regulator Module is to be used for producing a control voltage at an exit point; And this current generating module is this exit point that is coupled to this Voltage Regulator Module, and is used for producing a reference current according to this control voltage; And this ring oscillator is to be coupled between this Voltage Regulator Module and this current generating module, and be used for exporting an oscillator signal according to this reference current and this control voltage, and this ring oscillator includes: a plurality of switch modules of serial connection, a current mirror module and a plurality of capacitance module, wherein, this current mirror module is to be coupled to this control voltage, these a plurality of switch modules and this current generating module, and is used for providing a mirror currents to these a plurality of switch modules respectively according to this reference current; And each capacitance module in these a plurality of capacitance modules is to be coupled between two adjacent in these a plurality of switch modules switch modules, and each capacitance module is made of at least one transistor.

Beneficial effect of the present invention is: the frequency of the oscillator signal CLKO that oscillation module is exported can not be subjected to the influence of variability of magnitude of voltage Vb skew, variation of ambient temperature and the manufacture of semiconductor of operating voltage VBG.

Description of drawings

Fig. 1 is the simplification block schematic diagram of the oscillation device of one embodiment of the invention;

Fig. 2 is the circuit framework schematic diagram according to an embodiment of the Voltage Regulator Module among Fig. 1;

Fig. 3 is the circuit framework schematic diagram according to an embodiment of the current generating module among Fig. 1;

Fig. 4 is the circuit framework schematic diagram according to an embodiment of the oscillation module among Fig. 1.

Description of reference numerals:

The 100-oscillation device; The 200-Voltage Regulator Module; 210-first operational amplifier; 220-first switch element; 230-first bleeder circuit; 232-first sectional pressure element; 234-second sectional pressure element; The 300-current generating module; 310-second bleeder circuit; 312-the 3rd sectional pressure element; 314-the 4th sectional pressure element; 320-second operational amplifier; The 330-impedance module; 332-first impedance component; 334-second impedance component; 340-second switch element; 350-the 3rd switch element; The 400-oscillation module; The 410-switch module; 412-P type field-effect transistor; 414-N type field-effect transistor; The 420-current mirror module; The 430-capacitance module; 432-P type field-effect transistor; 434-N type field-effect transistor.

Embodiment

In the middle of this specification and follow-up claim, used some vocabulary to censure specific element, and the person with usual knowledge in their respective areas should understand, hardware manufacturer may be called same element with different nouns, this specification and follow-up claim are not used as distinguishing the mode of element with the difference of title, but the criterion that is used as distinguishing with the difference of element on function, mentioned in the middle of specification and the follow-up request item in the whole text " include " be to be an open term, so should be construed to " include but be not limited to ", in addition; " couple " speech this be include any directly and the indirect means that are electrically connected; therefore; be coupled to one second device; then represent this first device can directly be electrically connected in this second device, or be electrically connected to this indirectly by other devices or connection means and second install if describe one first device in the literary composition.

Please refer to Fig. 1, what Fig. 1 illustrated is the simplification block schematic diagram of the oscillation device 100 of one embodiment of the invention.As shown in Figure 1, oscillation device 100 includes: a Voltage Regulator Module 200, a current generating module 300 and an oscillation module 400, wherein, Voltage Regulator Module 200 is to be used for producing a control voltage VCC, and current generating module 300 is to be coupled to the Voltage Regulator Module circuit, and be used for producing a reference current IREF according to control voltage VCC, and oscillation module 400 is to be coupled between Voltage Regulator Module 200 and the current generating module 300, and is used for exporting an oscillator signal CLKO according to reference current IREF and control voltage VCC.Then, this specification will illustrate in oscillation device 100 of the present invention detail circuits framework and mode of operation about Voltage Regulator Module 200, current generating module 300 and oscillation module 400 respectively in following paragraph.

Please refer to Fig. 2, Fig. 2 illustrated is circuit framework schematic diagram for an embodiment of the Voltage Regulator Module among foundation Fig. 1 200.As shown in Figure 2, Voltage Regulator Module 200 includes: one first operational amplifier 210, one first switch element 220 and one first bleeder circuit 230, wherein, first operational amplifier 210 is to have first input end point to be coupled to an operating voltage VBG, one second input endpoint and an exit point, and first operational amplifier 210 is to be coupled to one first voltage source V DD; In addition, in the circuit framework of present embodiment, first switch element 220 is to be a p type field effect transistor (for example pmos fet), and first switch element 220 is to have this exit point, one first end points (that is source electrode) that a control end points (that is grid grid) is coupled to first operational amplifier 210 to be coupled to this second input endpoint that this first voltage source V DD and one second end points (that is drain electrode) are coupled to first operational amplifier 210; And first bleeder circuit 230 be to be coupled between first switch element 220 and the one second voltage source V GND (that is a ground voltage supplies), and first bleeder circuit 230 includes: one first sectional pressure element 232 and one second sectional pressure element 234, wherein, first sectional pressure element 232 is to be coupled to this second end points of first switch element 220 and an exit point of Voltage Regulator Module 200; And second sectional pressure element 234 be to be coupled between this exit point and the second voltage source V GND of Voltage Regulator Module 200.Thus, the resistance value of supposing first sectional pressure element 232 is to be Rvcc, and the current value through an electric current of first sectional pressure element 232 is to be Iout in Voltage Regulator Module 200, and the magnitude of voltage of control voltage VCC is to be Vc, and the magnitude of voltage of operating voltage VBG is during for Vb, so just can obtain a following equation (1):

Vc＝Vb-Iout×Rvcc (1)

Please refer to Fig. 3, Fig. 3 illustrated is circuit framework schematic diagram for an embodiment of the current generating module among foundation Fig. 1 300.As shown in Figure 3, current generating module 300 includes: one second bleeder circuit 310, one second operational amplifier 320, one impedance module 330, one second switch element 340, and one the 3rd switch element 350, wherein, second bleeder circuit 310 is to be coupled between the control voltage VCC and the second voltage source V GND, be used for producing a voltage quasi position between the control voltage VCC and the second voltage source V GND, in the present embodiment, one the 3rd sectional pressure element 312 in second bleeder circuit 310 and the resistance value of one the 4th sectional pressure element 314 are to be 1: 1, so this voltage quasi position that second bleeder circuit 310 is produced is half (that is the Vc/2) that equals to control voltage VCC.In addition, second operational amplifier 320 is to have first input end point to be coupled to second bleeder circuit 310 to receive this voltage quasi position, one second input endpoint and an exit point, and second operational amplifier 320 is to be coupled to this first voltage source V DD, and impedance module 330 is to be coupled between this second input endpoint of the control voltage VCC and second operational amplifier 320, in the present embodiment, one first impedance component 332 in the impedance module 330 and one second impedance component 334 are to be respectively a diffused resistor (diffusion resistor) and a polyresistor (polysiliconresistor), wherein this diffused resistor and this polyresistor are to have different temperatures coefficient, and the resistance value of first impedance component 332 and one second impedance component 334 is to be respectively Rd and Rp.In addition, in the circuit framework of present embodiment, second switch element 340 and the 3rd switch element 350 are respectively a n type field effect transistor (for example nmos fet), and second switch element 340 is to have this exit point that a control end points (that is grid) is coupled to second operational amplifier 320, one first end points (that is source electrode) is coupled to this second input endpoint that the second voltage source V GND and one second end points (that is drain electrode) are coupled to second operational amplifier 320, and the 3rd switch element 350 be to have a control end points (that is grid) to be coupled to this exit point of second operational amplifier 320, one first end points (that is source electrode) is coupled to the second voltage source V GND and one second end points (that is drain electrode), and wherein second end points is to be coupled to oscillation module 400 and to export reference current IREF.Thus, the current value of hypothetical reference electric current I REF is to be Ir, just can obtain a following equation (2):

Iout=A * Ir=A * Vc/[2 (Rd+Rp)] (2) (wherein A is a constant)

And, can obtain an equation (3) by above-mentioned equation (1) and equation (2):

Iout(Rvcc+2(Rd+Rp)/A)＝Vb (3)

In addition, because the frequency of the oscillator signal CLKO that oscillation module 400 is exported is to be directly proportional with the current value I r of reference current IREF, (all can understand for haveing the knack of this related art techniques person and be inversely proportional to about this part with the Δ V of oscillation module 400, institute thinks for purpose of brevity, do not add to give unnecessary details at this), therefore, when skew (offset) appears in the magnitude of voltage Vb of operating voltage VBG, the frequency of the oscillator signal CLKO that oscillation module 400 is exported can't be affected, for instance, when the magnitude of voltage Vb of operating voltage VBG descends, the current value I r of reference current IREF will descend, and cause the frequency of oscillator signal CLKO to descend, yet meanwhile, because the decline of the current value I r of reference current IREF can make the magnitude of voltage Vc of control voltage VCC also descend (that is Δ V also can descend), therefore can cause the frequency of oscillator signal CLKO to improve, so just can form a compensating effect thus, make the frequency of the oscillator signal CLKO that oscillation module 400 is exported can't be subjected to the influence of the magnitude of voltage Vb skew of operating voltage VBG.

In addition, in the disclosed oscillation device 100 of the present invention, ratio between the resistance value Rd that can also be by suitably selecting first impedance component 332 and the resistance value Rp of one second impedance component 334, and the temperature parameter of selection operation voltage VBG decides the temperature coefficient (temperature coefficient) of reference current IREF, therefore can be so that the frequency of the oscillator signal CLKO that oscillation module 400 is exported can't be subjected to the influence of variation of ambient temperature.

Please refer to Fig. 4, Fig. 4 illustrated is circuit framework schematic diagram for an embodiment of the oscillation module among foundation Fig. 1 400; As shown in Figure 4, oscillation module 400 in the present embodiment is to be a ring oscillator, and oscillation module 400 includes: five switch modules 410, a current mirror module 420 and five capacitance modules 430 of serial connection, wherein, current mirror module 420 is to be coupled to control voltage VCC, five switch modules 410 and current generating module 300, and is used for providing a mirror currents (that is electric current I REF) to each switch module 410 respectively according to reference current IREF; And each capacitance module 430 in five capacitance modules 430 is to be coupled between two adjacent in five switch modules 410 switch modules 410, and in the present embodiment, each switch module 410 is to be a reverser, and it includes a p type field effect transistor 412 (for example pmos fet) and a n type field effect transistor 414 (for example nmos fet); Each capacitance module 430 includes one first electric capacity that is made of a p type field effect transistor 432 (for example pmos fet) and one second electric capacity that is made of a n type field effect transistor 434 (for example nmos fet), and the control end points (that is grid) of the 3rd transistor 432 and the 4th transistor 434 is to be coupled to the output of a reverser (that is switch module 410) and adjacent to the input of another reverser of reverser; First end points (that is source electrode) of the 3rd transistor 432 is to be coupled to control voltage VCC with second end points (that is drain electrode); And first end points (that is source electrode) of the 4th transistor 434 is to be coupled to the second voltage source V GND with second end points (that is drain electrode).In addition, please note at this, because all field-effect transistors all are to be finished by identical manufacture of semiconductor made in oscillation module 400, therefore, add after capacitance module 430 is coupled between two adjacent in five switch modules 410 switch modules 410 in the present invention, just can avoid the frequency of the oscillator signal CLKO that oscillation module 400 exported to be subjected to the influence of the variability of manufacture of semiconductor.For instance, when the thickness of the grid oxic horizon of the p type field effect transistor in the switch module 410 412 reduces, the critical voltage of p type field effect transistor 412 (threshold voltage) can decrease, and driving force (driving ability) will strengthen, yet meanwhile, because the thickness of the grid oxic horizon of the p type field effect transistor 432 in the capacitance module 430 equally also can reduce, and the capacitance of capacitance module 430 will increase, so just can avoid like this frequency of the oscillator signal CLKO that oscillation module 400 exported to be subjected to the influence of the variability of manufacture of semiconductor.In addition, note that at this above embodiments only illustrate as of the present invention, rather than restrictive condition of the present invention.

In sum, in the disclosed oscillation device 100 of the present invention, the frequency of the oscillator signal CLKO that oscillation module 400 is exported can not be subjected to the influence of variability of magnitude of voltage Vb skew, variation of ambient temperature and the manufacture of semiconductor of operating voltage VBG.

Above embodiment only is preferred embodiment of the present invention, and it is illustrative for the purpose of the present invention, and nonrestrictive.Those skilled in the art carries out conversion, modification even equivalence to it under the situation that does not exceed spirit and scope of the invention, these changes all can fall into claim protection range of the present invention.

Claims

1. an oscillation device is characterized in that, includes a Voltage Regulator Module, a current generating module and an oscillation module, wherein:

This Voltage Regulator Module be used for producing a control voltage at its exit point, and this Voltage Regulator Module includes:

One first operational amplifier, it has first input end point and is coupled to an operating voltage, one second input endpoint and an exit point, and this first operational amplifier is to be coupled to one first voltage source;

One first switch element, it has this exit point, one first end points that a control end points is coupled to this first operational amplifier and is coupled to this second input endpoint that this first voltage source and one second end points are coupled to this first operational amplifier; And

One first bleeder circuit is coupled between this first switch element and one second voltage source, and this first bleeder circuit includes: one first sectional pressure element is coupled between the exit point of this second end points of this first switch element and this Voltage Regulator Module; And one second sectional pressure element, be coupled between the exit point and this second voltage source of this Voltage Regulator Module;

This current generating module is coupled to this exit point of this Voltage Regulator Module, is used for producing a reference current according to this control voltage; This current generating module includes:

One second bleeder circuit is coupled between this control voltage and this second voltage source, is used for producing the voltage quasi position between this control voltage and this second voltage source;

One second operational amplifier, it has first input end point and is coupled to this second bleeder circuit receiving this voltage quasi position, one second input endpoint and an exit point, and this second operational amplifier is to be coupled to this first voltage source;

One impedance module is coupled between this second input endpoint of this control voltage and this second operational amplifier;

One second switch element, it has this exit point, one first end points that a control end points is coupled to this second operational amplifier and is coupled to this second input endpoint that this second voltage source and one second end points are coupled to this second operational amplifier; And

One the 3rd switch element, it has this exit point, one first end points that a control end points is coupled to this second operational amplifier and is coupled to this second voltage source and one second end points, and wherein this second end points is to be coupled to this oscillation module and to export this reference current;

This oscillation module is coupled between this Voltage Regulator Module and this current generating module, is used for exporting an oscillator signal according to this reference current and this control voltage; This oscillation module is a ring oscillator, and it includes:

A plurality of switch modules of serial connection;

One current mirror module is coupled to this control voltage, a plurality of switch module and this current generating module, and being used for provides a mirror currents to these a plurality of switch modules respectively according to this reference current; And

A plurality of capacitance modules, each capacitance module are to be coupled between two adjacent in these a plurality of switch modules switch modules, and each capacitance module is made of at least one transistor.

2. oscillation device according to claim 1 is characterized in that, this impedance module includes a diffused resistor and a polyresistor, and both are connected in series, and wherein this diffused resistor and this polyresistor have different temperatures coefficient.

3. oscillation device according to claim 1 is characterized in that, this second switch element and the 3rd switch element are transistor.

4. oscillation device according to claim 3 is characterized in that, this second switch element and the 3rd switch element are to be n type field effect transistor.

5. oscillation device according to claim 1 is characterized in that, each switch module is to be a reverser, and it includes a first transistor and a transistor seconds; Each capacitance module includes one first electric capacity that is made of one the 3rd transistor and one second electric capacity that is made of one the 4th transistor, and the 3rd transistor AND gate the 4th transistorized control end points is the output that is coupled to a reverser and input adjacent to another reverser of this reverser; The 3rd transistorized first end points and second end points are to be coupled to this control voltage; And the 4th transistorized first end points and second end points be to be coupled to this second voltage source.

6. an oscillation device is characterised in that, includes a Voltage Regulator Module, a current generating module and an oscillation module, wherein:

This Voltage Regulator Module is used for producing a control voltage at its exit point; And this Voltage Regulator Module includes:

One second operational amplifier, it has first input end point and is coupled to this second bleeder circuit receiving this voltage quasi position, one second input endpoint and an exit point, and this second operational amplifier is to be coupled to one first voltage source;

One the 3rd switch element, it has this exit point, one first end points that a control end points is coupled to this second operational amplifier and is coupled to this second voltage source and one second end points, and wherein this second end points is to be coupled to this ring oscillator and to export this reference current;

One ring oscillator is coupled between this Voltage Regulator Module and this current generating module, be used for exporting an oscillator signal according to this reference current and this control voltage, and this ring oscillator includes:

A plurality of switch modules of serial connection;

One current mirror module is coupled to this control voltage, these a plurality of switch modules, this current generating module and one second voltage source, and being used for provides a mirror currents to these a plurality of switch modules respectively according to this reference current; And

7. oscillation device according to claim 6 is characterized in that, each switch module is to be a reverser, and it includes a first transistor and a transistor seconds; Each capacitance module includes one first electric capacity that is made of one the 3rd transistor and one second electric capacity that is made of one the 4th transistor, and the 3rd transistor AND gate the 4th transistorized control end points is the output that is coupled to a reverser and input adjacent to another reverser of this reverser; The 3rd transistorized first end points and second end points are to be coupled to this control voltage; And the 4th transistorized first end points and second end points be to be coupled to this second voltage source.

8. oscillation device according to claim 7 is characterized in that, this impedance module includes a diffused resistor and a polyresistor, and the two is connected in series, and wherein this diffused resistor and this polyresistor have different temperatures coefficient.

9. oscillation device according to claim 8 is characterized in that, this second switch element and the 3rd switch element are transistor.

10. oscillation device according to claim 9 is characterized in that, this second switch element and the 3rd switch element are to be n type field effect transistor.