CN100561610C - A kind of method that improves surface flashover voltage of vacuum insulating medium - Google Patents
A kind of method that improves surface flashover voltage of vacuum insulating medium Download PDFInfo
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- CN100561610C CN100561610C CNB2007100190769A CN200710019076A CN100561610C CN 100561610 C CN100561610 C CN 100561610C CN B2007100190769 A CNB2007100190769 A CN B2007100190769A CN 200710019076 A CN200710019076 A CN 200710019076A CN 100561610 C CN100561610 C CN 100561610C
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Abstract
The present invention is in order to improve dielectric edge flashing voltage in the vacuum, a kind of method to dielectric surface sputtering gold particle is disclosed, it is characterized in that comprise the steps: that (1) preparation length is the dielectric sample of 4mm～14mm, specimen length is electrode spacing; (2) use the particle sputter, in dielectric specimen surface sputter gold particle, sputtering time is controlled at 10s～40s; (3) obtain the sample of golden film thickness at last at the surperficial semiconducting dielectric of 3.92～15.68 dusts.The present invention handles by the dielectric outer surface being carried out the sputter gold particle, can improve its vacuum edge flashing voltage significantly.A plurality of fields such as that the method that the present invention proposes can be applicable to is electric, space flight, armament systems.
Description
Technical field
The present invention relates to a kind of method that improves surface flashover voltage of vacuum insulating medium,
Background technology
Solid insulating material generation edge flashing becomes problem that seriously is difficult to avoid of electric and electronic system in the vacuum.Therefore, research improves insulating material and the vacuum edge flashing voltage of insulation system under the direct voltage effect; Reduce the length of dielectric between vacuum mesohigh electrode, the size and the volume of, space flight electric, weapon equipment to dwindling, alleviating its weight has significance.
Studies show that: the kind of solid insulation material, face coat, doping and modification processing etc. are influential to edge flashing, damage and withstand voltage properties.But, the surface modification poor repeatability, instability, reliability is bad, is difficult to use.Have the researcher to adopt cermet to embed in the pottery, electric field is even on every side to make negative electrode, thereby improves edge flashing voltage, and this changes surface breakdown (flashover) into the body puncture, is a kind of integrated preparation technology.From present domestic and international various results of study, improve dielectric edge flashing voltage from the material angle and can consider: the dielectric uniformity that improves material surface from the following aspects; Reduce the secondary electron yield of material surface; Reduce the material surface dielectric constant; Reduce the surface resistivity of dielectric; Reduce the surface adsorption gas flow or improve the gas absorption energy.
According to bibliographical information in the past, be good for improving edge flashing voltage at dielectric surface applied conductor layer or semiconductor layer, and it is more more superior than only resting on surperficial coating to infiltrate the outer field coating of dielectric, more can resist surface damage usually because have the dielectric of such surface doping layer.Most of surface applied all are at inorganic material, normally ceramic material.H.C.Miller and E.J.Furno have just reported the improvement effect of aluminium oxide ceramics surface applied Mn/Ti to insulator arc-over voltage a long time ago.
Summary of the invention
The present invention provides a kind of method by dielectric surface sputtering gold particle in order to improve dielectric edge flashing voltage in the vacuum, improves comprehensive electric property.
For reaching above purpose, the present invention takes following technical scheme to be achieved:
A kind of method that improves surface flashover voltage of vacuum insulating medium is characterized in that, comprises the steps:
(1) preparation length is the dielectric sample of 4mm～14mm, and specimen length is electrode spacing;
(2) use the particle sputter, in dielectric specimen surface sputter gold particle, sputtering time is controlled at 10s～40s;
(3) obtain golden film thickness at last roughly at the surperficial semiconducting dielectric sample of 4～16 dusts.
In the such scheme, described dielectric sample is SiO
2Quartzy monocrystalline or Al
2O
3Monocrystalline; When electrode spacing during, be SiO to the dielectric sample at 14mm
2Quartzy monocrystalline, sputtering time is controlled at 20s; To the dielectric sample is Al
2O
3Monocrystalline, sputtering time is controlled at 30s.
The present invention adopts the particle sputter to dielectric surface sputtering gold particle, sputtering time 10s～40s, specimen surface resistivity behind the metal spraying is continuous downward trend, handles by the dielectric surface being carried out semiconducting, can significantly improve its vacuum edge flashing voltage.To the dielectric sample is SiO
2Quartzy monocrystalline, electrode spacing 14mm, sputtering time is controlled at 20s; The vacuum edge flashing field intensity improves can reach 85%; To the dielectric sample is Al
2O
3Monocrystalline, electrode spacing 14mm, sputtering time is controlled at 30s, and the vacuum edge flashing field intensity improves can reach 57%.A plurality of fields such as that the method that the present invention proposes can be applicable to is electric, space flight, armament systems.
Embodiment
The present invention is described in further detail below in conjunction with specific embodiment:
Embodiment 1
A kind of method that improves surface flashover voltage of vacuum insulating medium uses the particle sputter at three groups of different length SiO
2Quartzy single-crystal surface sputter gold particle, the electrode spacing when also being sputter (4,9,14mm), sputtering time is chosen as 10s, 20s, 30s, 40s; The golden film thickness of single-crystal surface is as shown in table 2 after the sputter; Carry out the edge flashing experiment then, carry out in JTK-200 type vacuum High-Voltage Experiment system, vacuum ranges selects 1.0 * 10
-2Pa～5.0 * 10
-4Pa is because 1.0 * 10
-2Below the Pa, vacuum degree is to the not influence of edge flashing voltage.Made 15 samples altogether, measured experimental result is as shown in table 1.
Table 1 the present invention is at SiO
2The technological parameter and the test result of quartzy single-crystal surface sputter gold particle
| The sample code name | Electrode spacing (mm) | Sputtering time (S) | Gold film thickness (dust) | Flashover field intensity (kV/cm) |
| 1 | 4 | 0 | 0 | 69.8 |
| 2 | 4 | 10 | 3.92 | 108.4 |
| 3 | 4 | 20 | 7.84 | 71.2 |
| 4 | 4 | 30 | 11.76 | 82 |
| 5 | 4 | 40 | 15.68 | - |
| 6 | 9 | 0 | 0 | 27.38 |
| 7 | 9 | 10 | 3.92 | 41.67 |
| 8 | 9 | 20 | 7.84 | 29.22 |
| 9 | 9 | 30 | 11.76 | 30.13 |
| 10 | 9 | 40 | 15.68 | - |
| 11 | 14 | 0 | 0 | 20 |
| 12 | 14 | 10 | 3.92 | 24.83 |
| 13 | 14 | 20 | 7.84 | 37.09 |
| 14 | 14 | 30 | 11.76 | 33.33 |
| 15 | 14 | 40 | 15.68 | 28.93 |
In table 1 as can be seen, electrode spacing 14mm, when sputtering time was 20 seconds, field intensity improved maximum, up to 85%.Style 5 is too big owing to electric current with style 10, more than 200 μ A, so do not test flashover voltage.
Embodiment 2
The another kind of method that improves surface flashover voltage of vacuum insulating medium uses the particle sputter at three groups of different length Al
2O
3Single-crystal surface sputter gold particle, the electrode spacing when also being sputter (4,9,14mm), sputtering time is chosen as 10s, 20s, 30s, 40s; The golden film thickness of single-crystal surface is as shown in table 2 after the sputter; Carry out the edge flashing experiment then, carry out in JTK-200 type vacuum High-Voltage Experiment system, vacuum ranges selects 1.0 * 10
-2Pa～5.0 * 10
-4Pa is because 1.0 * 10
-2Below the Pa, vacuum degree is to the not influence of edge flashing voltage.Also made 15 samples, measured experimental result is as shown in table 2:
Table 2 the present invention is at Al
2O
3The technological parameter and the test result of single-crystal surface sputter gold particle
| The sample code name | Electrode spacing (mm) | Sputtering time (S) | Gold film thickness (dust) | Flashover field intensity (kV/cm) |
| 16 | 4 | 0 | 0 | 68.7 |
| 17 | 4 | 10 | 3.92 | - |
| 18 | 4 | 20 | 7.84 | 83.25 |
| 19 | 4 | 30 | 11.76 | 66 |
| 20 | 4 | 40 | 15.68 | 69 |
| 21 | 9 | 0 | 0 | 30.1 |
| 22 | 9 | 10 | 3.92 | - |
| 23 | 9 | 20 | 7.84 | 33 |
| 24 | 9 | 30 | 11.76 | 39.4 |
| 25 | 9 | 40 | 15.68 | 30.5 |
| 26 | 14 | 0 | 0 | 19 |
| 27 | 14 | 10 | 3.92 | 19 |
| 28 | 14 | 20 | 7.84 | 21.1 |
| 29 | 14 | 30 | 11.76 | 30.23 |
| 30 | 14 | 40 | 15.68 | 29.27 |
As can be seen from Table 2, when sputtering time was 10s, the flashover field intensity did not have significant change, thus style 17 and style 22 unlisted flashover field intensity data, electrode spacing 14mm, when sputtering time was 30 seconds, field intensity improved maximum, up to 57%.
Claims (3)
1. a method that improves surface flashover voltage of vacuum insulating medium is characterized in that, comprises the steps:
(1) preparation length is the dielectric sample of 4mm～14mm, and specimen length is electrode spacing;
(2) use the particle sputter, in dielectric specimen surface sputter gold particle, sputtering time is controlled at 10s～40s;
(3) obtain golden film thickness at last roughly at the surperficial semiconducting dielectric sample of 4～16 dusts;
Described dielectric sample is SiO
2Quartzy monocrystalline or Al
2O
3Monocrystalline.
2. the method for raising surface flashover voltage of vacuum insulating medium according to claim 1 is characterized in that, when electrode spacing during at 14mm, is SiO to the dielectric sample
2Quartzy monocrystalline, sputtering time is controlled at 20s.
3. the method for raising surface flashover voltage of vacuum insulating medium according to claim 1 is characterized in that, when electrode spacing during at 14mm, is Al to the dielectric sample
2O
3Monocrystalline, sputtering time is controlled at 30s.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100190769A CN100561610C (en) | 2007-11-16 | 2007-11-16 | A kind of method that improves surface flashover voltage of vacuum insulating medium |
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| CNB2007100190769A CN100561610C (en) | 2007-11-16 | 2007-11-16 | A kind of method that improves surface flashover voltage of vacuum insulating medium |
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|---|---|
| CN101183574A CN101183574A (en) | 2008-05-21 |
| CN100561610C true CN100561610C (en) | 2009-11-18 |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103545058B (en) * | 2013-08-05 | 2015-08-19 | 华中科技大学 | A kind of method improving insulating material vacuum edge flashing voltage |
| CN105467281B (en) * | 2015-11-19 | 2018-09-04 | 西安交通大学 | A method of improving solid insulating material surface flashover characteristics |
| CN113121207B (en) * | 2019-12-30 | 2023-10-13 | 辽宁省轻工科学研究院有限公司 | Low-dielectric low secondary electron emission coefficient composite powder, preparation method and application |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4957771A (en) * | 1989-07-21 | 1990-09-18 | The United States Of America As Represented By The Secretary Of The Air Force | Ion bombardment of insulator surfaces |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4957771A (en) * | 1989-07-21 | 1990-09-18 | The United States Of America As Represented By The Secretary Of The Air Force | Ion bombardment of insulator surfaces |
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