CN100559559C - Make the method for encapsulation cover of optical part - Google Patents
Make the method for encapsulation cover of optical part Download PDFInfo
- Publication number
- CN100559559C CN100559559C CNB2007100858794A CN200710085879A CN100559559C CN 100559559 C CN100559559 C CN 100559559C CN B2007100858794 A CNB2007100858794 A CN B2007100858794A CN 200710085879 A CN200710085879 A CN 200710085879A CN 100559559 C CN100559559 C CN 100559559C
- Authority
- CN
- China
- Prior art keywords
- wafer
- battery lead
- lead plate
- encapsulation cover
- optical part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 53
- 238000005538 encapsulation Methods 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims description 24
- 239000011521 glass Substances 0.000 claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 claims abstract description 10
- 238000005516 engineering process Methods 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000001259 photo etching Methods 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 50
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910052708 sodium Inorganic materials 0.000 description 7
- 239000011734 sodium Substances 0.000 description 7
- 125000004436 sodium atom Chemical group 0.000 description 7
- 229910001415 sodium ion Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- -1 oxonium ion Chemical class 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 3
- 229910001948 sodium oxide Inorganic materials 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000000708 deep reactive-ion etching Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a kind of method of making encapsulation cover of optical part, it comprises: the wafer with a plurality of through holes is provided, and chip glass is placed on this wafer.The battery lead plate with a plurality of grooves that places on the chip glass is provided afterwards, and its further groove makes battery lead plate not contact with chip glass in the position of corresponding through hole corresponding to the through hole of wafer.At last, provide voltage source, and, utilize anodic bonding mode joint wafer and chip glass, and form a plurality of encapsulation cover of optical part respectively with two electrodes electric connections of wafer and battery lead plate and voltage source.
Description
Technical field
The present invention relates to a kind of method of making encapsulation cover of optical part, refer to that especially a kind of making has the encapsulation cover of optical part that air-tightness is good, light transmission is good and can carry out wafer-class encapsulation.
Background technology
In the manufacture process of micro electronmechanical product, along with the difference of various applications and product, its encapsulation technology and kenel also differ widely.(Wafer Level Packaging is to carry out packaging and testing earlier on the full wafer wafer WLP) to the wafer-class encapsulation mode, just cut into other tube core then, so volume after being encapsulated promptly is similar to the life size of the naked crystalline substance of integrated circuit (IC).Wafer-class encapsulation is not only obviously dwindled component size, and meets now the high density demand to the space.
Please refer to Fig. 1 to Fig. 3.Fig. 1 to Fig. 3 is the method schematic diagram of known making encapsulation cover of optical part.As shown in Figure 1, provide wafer 10, utilize photoetching and etching technique on wafer 10, to form a plurality of through holes 12, on wafer 10, put chip glass 14 then.As shown in Figure 2, provide heating plate 16, wafer 10 is arranged on the heating plate 16.As shown in Figure 3, provide battery lead plate 18, be arranged on the chip glass 14, and the surface of battery lead plate 18 is smooth.Voltage source 20 is provided then, positive pole and negative pole with voltage source 20 is electrically connected at wafer 10 and battery lead plate 18 respectively, carry out anodic bonding then, between wafer 10 and battery lead plate 18, impose high voltage (Vs), and utilize heating plate 16 heated chips 10 and chip glass 14 to high temperature.
Please refer to Fig. 4, Fig. 4 ionic reaction situation figure in the glass when carrying out anodic bonding.As shown in Figure 4, when wafer 10 and chip glass 14 are imposed high voltage and outside when increasing temperature, the sodium oxide molybdena (Na in the chip glass 14
2O) can be dissociated into sodium ion (Na
+) 22 and oxonium ion (O
2-) 24, oxonium ion 24 is concentrated in the interface of 14 of wafer 10 and chip glasses, then with wafer 10 in silicon atom reaction (Si+2O
2--＞SiO
2) and the covalency bond of formation silica (Si-Ox) therefore combines wafer 10 and chip glass 14.24 of sodium ions can be shifted to battery lead plate 18, and combine and form sodium atom (Na) with electronics and separate out (4Na
++ 4e
--＞4Na).But can be after sodium atom is separated out attached to chip glass 14 surfaces, and subsequent technique can't be removed in the mode of cleaning, make encapsulation cover of optical part can't have good light transmittance, thereby have influence on the light transmission of follow-up encapsulation integrated optical cell, more reduce the optical function of optical element.
Summary of the invention
Therefore, main purpose of the present invention is to provide a kind of method of making encapsulation cover of optical part, to provide that air-tightness is good, light transmission is good and can carry out the encapsulation cover of optical part of wafer-class encapsulation.
According to the present invention, provide a kind of method of making encapsulation cover of optical part.Wafer at first is provided, and on this wafer, forms a plurality of through holes.Then chip glass is placed on this wafer.Next, provide battery lead plate, and this battery lead plate is placed on this chip glass, wherein this battery lead plate has a plurality of grooves, corresponding to these through holes of this wafer, makes this battery lead plate not contact with this chip glass in the position of corresponding these through holes.At last, voltage source is provided, and this wafer is electrically connected the positive pole of this voltage source, and this battery lead plate is electrically connected the negative pole of this voltage source, make between this wafer and this battery lead plate and produce voltage difference, utilize the anodic bonding mode to engage this wafer and this chip glass thus, and form a plurality of encapsulation cover of optical part.
The method of making encapsulation cover of optical part provided by the invention is utilized the battery lead plate of particular design and is cooperated the anodic bonding mode, clean printing opacity and free of contamination glass vision panel are provided, be attached on the chip glass and can't clean to solve sodium atom, make encapsulation cover of optical part can't have the problem of good light transmittance.
Description of drawings
Fig. 1 to Fig. 3 is the method schematic diagram of known making encapsulation cover of optical part.
Fig. 4 ionic reaction situation figure in the glass when carrying out anodic bonding.
Fig. 5 to Figure 11 is for making the method schematic diagram of encapsulation cover of optical part.
Figure 12 to Figure 14 is applied to the method schematic diagram of element wafer for encapsulation cover of optical part.
Description of reference numerals
10 wafers, 12 through holes
14 chip glasses, 16 heating plates
18 battery lead plates, 20 voltage sources
22 sodium ions, 24 oxonium ions
50 wafers, 52 photoresist patterns
54 through holes, 56 heating plates
58 chip glasses, 60 battery lead plates
62 grooves, 64 voltage sources
66 sodium ions, 68 oxonium ions
70 encapsulation cover of optical part, 72 element wafers
74 optical elements, 76 dicing tapes
78 optical package elements
Embodiment
Please refer to Fig. 5 to Figure 11, Fig. 5 to Figure 11 is for making the method schematic diagram of encapsulation cover of optical part.As shown in Figure 5, provide wafer 50, for example silicon wafer carries out thinning technology to wafer 50 then wafer 50 is thinned to required thickness.Thinning technology includes the combination of glossing, CMP (Chemical Mechanical Polishing) process, plasma thinning technology or above-mentioned technology.As shown in Figure 6; utilize photoetching technique on wafer, to form photoresist pattern 52; carry out etch process is not protected wafer 50 as mask with photoresist pattern 52 by photoresist pattern 52 part eating thrown then, make wafer 50 form a plurality of through holes 54.Etch process can be the dry ecthing mode, for example: deep reactive ion etch (Deep Reactive IonEtching, Deep RIE).As shown in Figure 7, and then photoresist pattern 52 removed, and clean.
As shown in Figure 8, wafer 50 is placed on the heating plate 56, and chip glass 58 is placed on the wafer 50, utilize heating plate 56 that wafer 50 and chip glass 58 are heated between 200 ℃ to 450 ℃ then.Chip glass 58 contains sodium oxide molybdena (Na
2O) ion, for example: model Pyrex 7740 glass of Corning Incorporated's manufacturing.As shown in Figure 9, provide battery lead plate 60, and battery lead plate 60 is placed on the chip glass 58, wherein battery lead plate 60 has a plurality of grooves 62, corresponding to the through hole 54 of wafer 50, makes battery lead plate 60 not contact with chip glass 58 in the position of corresponding through hole 54.As shown in figure 10, voltage source 64 is provided, respectively with the positive pole of voltage source 64 and electrical connecting wafer 50 of negative pole and battery lead plate 60, make the voltage difference that produces between wafer 50 and the battery lead plate 60 between 200 volts to 2000 volts, utilize anodic bonding (anodic bonding) mode joint wafer 50 and chip glass 58 thus, and form a plurality of encapsulation cover of optical part 70, as shown in figure 11.In the present embodiment, the temperature of anodic bonding needs in 200 ℃ to 450 ℃ scope, and voltage needs just can carry out between 200 volts to 2000 volts simultaneously, as shown in figure 10, and when carrying out anodic bonding, the sodium oxide molybdena (Na in the chip glass 58
2O) can be dissociated into sodium ion (Na
+) 66 and oxonium ion (O
2-) 68, oxonium ion 68 is concentrated in the interface of 58 of wafer 50 and chip glasses, then with wafer 50 in silicon atom (Si) reaction (Si+2O
2--＞SiO
2) and forming the covalency bond of silica (Si-Ox), wafer 50 and chip glass 58 be covalency bond and combining therefore.66 of sodium ions can be shifted to battery lead plate 60, and combine and form sodium atom (Na) with electronics and separate out (4Na
++ 4e
--＞4Na).It should be noted that, because battery lead plate 60 has the through hole 54 of a plurality of grooves 62 corresponding to wafer, make battery lead plate 60 not contact with chip glass 58 in the position of corresponding through hole 54, therefore when carrying out anodic bonding, 66 of sodium ions can be shifted to and chip glass 58 electrodes in contact plates 60, then with battery lead plate 60 on electron reaction, and on chip glass 58 and interface that battery lead plate 60 contacts the precipitated sodium atom, therefore chip glass 58 surfaces that do not contact with battery lead plate 60 do not have sodium atom and separate out, the transmission region that makes chip glass 58 is clean and free of contamination, and therefore the encapsulation cover of optical part 70 that has encapsulated has good light transmittance.
Please refer to Figure 12 to Figure 14, Figure 12 to Figure 14 is applied to the method schematic diagram of element wafer for encapsulation cover of optical part.As shown in figure 12, provide element wafer 72.The surface of element wafer 72 includes a plurality of optical elements 74, for example photo-sensitive cell or light-emitting component etc.As shown in figure 13, then carry out the contraposition step, the position of encapsulation cover of optical part 70 corresponding optical elements 74 is attached on the element wafer 72, can utilizes eutectic to engage (eutectic bonding) or glass cement joint (glass frit bonding) technology airtight joint encapsulation cover of optical part 70 and element wafer 72.As shown in figure 14, at last element wafer 72 is sticked on the dicing tape 76, carry out cutting technique then, make element wafer 72 be divided into a plurality of optical package elements 78, and all have encapsulation cover of optical part 70 on each optical element 72.
The method of making encapsulation cover of optical part provided by the invention is utilized the battery lead plate of particular design and is cooperated the anodic bonding mode, making the transmission region of encapsulation cover of optical part not have sodium atom separates out, so that clean printing opacity and free of contamination glass vision panel to be provided, and the silica covalency bond that anodic bonding produced provides the encapsulation cover of optical part structure that adhesion is strong and combine closely.Then this encapsulation cover of optical part is engaged on the element wafer,, and sees through encapsulation cover of optical part and have the good optical function by optical element with good light permeability with the optical element on the protection component wafer.In addition, because produced encapsulation cover of optical part can use for a plurality of optical elements, so the method that the present invention makes encapsulation cover of optical part more provides simplification, coherent and mass producible manufacture method.
The above only is the preferred embodiments of the present invention, and all equivalent variations and modifications of doing according to claim of the present invention all should belong to covering scope of the present invention.
Claims (5)
1. method of making encapsulation cover of optical part includes:
Wafer is provided, and on this wafer, forms a plurality of through holes;
Chip glass is placed on this wafer;
Battery lead plate is provided, and this battery lead plate is placed on this chip glass, wherein this battery lead plate has a plurality of grooves, corresponding to these through holes of this wafer, makes this battery lead plate not contact with this chip glass in the position of corresponding these through holes; And
Voltage source is provided, and this wafer is electrically connected the positive pole of this voltage source, and this battery lead plate is electrically connected the negative pole of this voltage source, make between this wafer and this battery lead plate and produce voltage difference, utilize the anodic bonding mode to engage this wafer and this chip glass thus, and form a plurality of encapsulation cover of optical part.
2. the method for claim 1, other includes when engaging this wafer and this chip glass, and this wafer is placed on the heating plate.
3. the method for claim 1, the step that wherein forms these through holes includes:
This wafer is carried out thinning technology; And
Utilize photoetching and etching technique on this wafer, to form these through holes.
4. method as claimed in claim 3, wherein this thinning technology includes the combination of glossing, plasma thinning technology or above-mentioned technology.
5. the method for claim 1, other includes:
After forming these encapsulation cover of optical part, these encapsulation cover of optical part are attached on the element wafer that includes a plurality of optical elements; And
Carry out cutting technique, make this element wafer be divided into a plurality of optical package elements, and respectively all have this encapsulation cover of optical part on this optical element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100858794A CN100559559C (en) | 2007-03-08 | 2007-03-08 | Make the method for encapsulation cover of optical part |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100858794A CN100559559C (en) | 2007-03-08 | 2007-03-08 | Make the method for encapsulation cover of optical part |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101261941A CN101261941A (en) | 2008-09-10 |
| CN100559559C true CN100559559C (en) | 2009-11-11 |
Family
ID=39962298
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2007100858794A Expired - Fee Related CN100559559C (en) | 2007-03-08 | 2007-03-08 | Make the method for encapsulation cover of optical part |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100559559C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101439843B (en) * | 2008-10-10 | 2011-08-31 | 北京大学 | Miniature atomic air chamber encapsulation technology |
-
2007
- 2007-03-08 CN CNB2007100858794A patent/CN100559559C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN101261941A (en) | 2008-09-10 |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091111 Termination date: 20150308 |
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| EXPY | Termination of patent right or utility model |