CN100555537C - The flat-panel monitor and the manufacture craft thereof that have short circuit prevention cathodic protection structure - Google Patents
The flat-panel monitor and the manufacture craft thereof that have short circuit prevention cathodic protection structure Download PDFInfo
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- CN100555537C CN100555537C CNB2006100485135A CN200610048513A CN100555537C CN 100555537 C CN100555537 C CN 100555537C CN B2006100485135 A CNB2006100485135 A CN B2006100485135A CN 200610048513 A CN200610048513 A CN 200610048513A CN 100555537 C CN100555537 C CN 100555537C
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Abstract
The present invention relates to a kind of flat-panel monitor and manufacture craft thereof that has short circuit prevention cathodic protection structure, comprise by cathode glass faceplate, anode glass panel and all around glass enclose the sealed vacuum chamber that frame constitutes; Anode conductive layer and the phosphor powder layer of preparation on anode conductive layer that photoetching is arranged on the anode glass panel; Supporting wall structure between anode glass panel and cathode glass faceplate and getter subsidiary component have carbon nanotube cathod, control grid and the short circuit prevention cathodic protection structure of preparation on cathode glass faceplate; Prevent to control the generation of short circuit phenomenon between grid and the carbon nanotube cathod; Grid and carbon nanotube cathod height are integrated together, help further improving the power that is made into of device, reduce the operating voltage of device, have that manufacturing process is reliable and stable, manufacture craft is simple, cost of manufacture is cheap, advantage of simple structure.
Description
Technical field
The invention belongs to the mutual crossing domain of vacuum science and technology, microelectronics science and technology, plane Display Technique and nanometer science and technology; relate to the element manufacturing of panel field emission display; be specifically related to the content of element manufacturing aspect of the panel field emission display of carbon nanotube cathod, specially refer to the element manufacturing and the manufacture craft thereof that have panel field emission display short circuit prevention cathodic protection structure, carbon nanotube cathod.
Background technology
Carbon nano-tube has little tip curvature radius, and high aspect rate and good physicochemical characteristics have caused showing great attention to of numerous researchers.When the carbon nano-tube top end surface is applied appropriate voltage, need not apply extra energy once more so, carbon nano-tube will be launched a large amount of electronics, thereby has formed unique field emission phenomenon.Utilize this characteristic, carbon nano-tube has been made into panel field emission display spare as cathode material.The field emission display device of carbon nanotube cathod is a kind of flat device, have high luminosity, high-resolution, plurality of advantages such as the use warm area is wide and response speed is fast, the high image quality of cathode ray tube, the large tracts of land of plasma and the ultrathin advantage of LCD are rolled into one, in following flat panel display field, will take the course of its own.
In order to reduce the production cost of integral device, so that combine with conventional integrated circuit, the field-emission plane display of making three-stage structure has become a kind of inevitable choice.Because the distance of control grid and carbon nanotube cathod is very near, when after applying very little operating voltage on the control grid, will form powerful electric field strength so on the carbon nano-tube top, this is favourable to the overall work voltage of further reduction device.But, this has brought a new difficult problem but for the manufacture craft aspect of device, on the one hand, carbon nanotube cathode material is the comparison fragility, any in the device making technics process can reduce its field emission ability to the damage of carbon nanotube cathod, therefore must adopt an effective measure carbon nanotube cathod is protected; On the other hand, although the distance between control grid and the carbon nanotube cathod is very near, but mutual electric isolation between the two, can not make the two be communicated with, otherwise just lost the practical significance of control gate electrode structure.Simultaneously, cause the electric field strength on the carbon nano-tube top that forms very big again owing to the control gate pole tension, insulating material between grid and the negative electrode has been proposed certain requirement again, but thickness is wanted the enough again height of little insulation degree, in order to bear the operating voltage between grid and the negative electrode.These all are the realistic problems that the scientific research personnel need consider.
At present, the technology of preparation carbon nanotube cathod roughly can be divided into two classes, i.e. grafting and direct growth method.Utilize the carbon nano tube growth density height of direct growth method preparation, electron emission current density is big, have the grafting preparation carbon nanotube cathod incomparable good field emission characteristics.How effectively utilizing this advantage so in element manufacturing, also is to need considerable problem.
In addition, under the prerequisite of the excellent image quality of guaranteeing display device, also need further to reduce the element manufacturing cost; When can carrying out the broad area device making, it is complicated to need also to make that device fabrication processes avoids, and helps carrying out business-like large-scale production.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art and a kind of carbon nanotube cathod field emission flat-panel display short circuit prevention cathodic protection structure, that manufacturing process is with low cost, that rate of finished products is high, simple in structure and reliable and stable that has is provided.
The object of the present invention is achieved like this, comprise by cathode glass faceplate, anode glass panel and all around glass enclose the sealed vacuum chamber that frame constitutes; Anode conductive layer and the phosphor powder layer of preparation on anode conductive layer that photoetching is arranged on the anode glass panel; Carbon nanotube cathod, control grid and short circuit prevention cathodic protection structure that preparation is arranged on cathode glass faceplate; Supporting wall structure between anode glass panel and cathode glass faceplate and getter subsidiary component.
The backing material of described short circuit prevention cathodic protection structure is a doped silicon wafer, and its doping type is the heavy doping of n type; There is cathode conductive layer in the dorsal part of n type heavy doping silicon chip; There is dielectric isolation layer in the front of n type heavy doping silicon chip; Grid layer of the top existence of dielectric isolation layer; Dielectric isolation layer and grid layer can carry out etching, its etching is in proper order for carrying out etching to grid layer earlier, expose the dielectric isolation layer of bottom, the sidewall of the grid layer after the etching is perpendicular to n type heavy doping silicon chip surface plane, and then dielectric isolation layer carried out isotropic wet etching, need expose the n type heavy doping silicon chip surface of bottom; Dielectric isolation layer after the etching forms respectively to both sides the arc expanded configuration; There is the grid cover layer in the upper surface of n type heavy doping silicon chip; Grid cover layer after the etching need cover doped polysilicon layer fully, but will expose the surface of bottom n type heavy doping silicon chip; There is the secondary doping polysilicon layer in surface at the n type heavy doping silicon chip that exposes, secondary doping polysilicon layer after etching bottom is that the surface with n type heavy doping silicon chip is in contact with one another, but the upper surface of secondary doping polysilicon layer presents an arcuate shape to upper process; The secondary doping polysilicon layer above the upper process arcuate shape, have transition zone; Catalyst metal layer of the top existence of transition zone; Can utilize catalyst layer to carry out the preparation of carbon nano-tube.
The fixed position of described short circuit prevention cathodic protection structure is for being fixed on the cathode glass faceplate.Cathode conductive layer can be metallic gold, silver, molybdenum, chromium, aluminium.The doping type of grid layer can be the n type, also can be the p type.The doping type of secondary doping polysilicon layer can be the n type, also can be the p type.Transition zone can be metallic gold, silver, molybdenum, chromium, tin, indium, platinum.Catalyst layer can be metallic iron, cobalt, nickel.
A kind of manufacture craft that has the flat-panel monitor of short circuit prevention cathodic protection structure, its manufacture craft is as follows:
1) making of substrate [1]: n type heavy doping silicon chip is carried out scribing, form substrate [1];
2) making of cathode conductive layer [2]: the dorsal part at n type heavy doping silicon chip is prepared a molybdenum layer, forms cathode conductive layer [2] after the etching;
3) making of dielectric isolation layer [3] and grid layer [4]: a silicon dioxide layer is prepared in the front at n type heavy doping silicon chip, is dielectric isolation layer after the etching; On dielectric isolation layer, prepare a n type doped polysilicon layer then, be grid layer after the etching;
4) making of grid cover layer [5]: the upper surface at n type heavy doping silicon chip is prepared a silicon dioxide layer once more, and the grid cover layer after the etching need cover doped polysilicon layer fully, but will expose the surface of bottom n type heavy doping silicon chip;
5) making of secondary doping polysilicon layer [6]: the surface preparation at the n type heavy doping silicon chip that exposes goes out a secondary n type doped polysilicon layer, secondary doping polysilicon layer after etching bottom is that the surface with n type heavy doping silicon chip is in contact with one another, but the upper surface of secondary doping polysilicon layer presents an arcuate shape to upper process;
6) making of intermediate metal [7]: the secondary doping polysilicon layer above the upper process arcuate shape, prepare a chromium metal level, form intermediate metal after the etching;
7) making of catalyst metal layer [8]: on intermediate metal, prepare a nickel metal layer, form catalyst metal layer after the etching;
8) cleaning surfaces of short circuit prevention cathodic protection structure: clean is carried out on the surface to short circuit prevention cathodic protection structure, removes impurity and dust;
9) preparation of carbon nano-tube [9]: utilize catalyst layer to prepare carbon nano-tube;
10) reprocessing of carbon nano-tube: carbon nano-tube is carried out reprocessing, improve field emission characteristics;
11) making of cathode glass faceplate [10]: sodium calcium plate glass is carried out scribing, form cathode glass faceplate;
12) making of anode glass panel [11]: sodium calcium plate glass is carried out scribing, form the anode glass panel;
13) making of anode conductive layer [12]: evaporation one deck tin indium oxide rete on the anode glass panel forms anode conductive layer after the etching;
14) making of insulation paste layer [13]: the non-display area at anode conductive layer prepares the insulation paste layer;
15) making of phosphor powder layer [14]: the viewing area on anode conductive layer prepares phosphor powder layer;
16) device assembling: with cathode glass faceplate, anode glass panel, supporting wall structure [15], glass encloses frame [16] and short circuit prevention cathodic protection structure is assembled together all around, and getter [17] put in the middle of the cavity, fix with glass powder with low melting point; Around face glass, smeared glass powder with low melting point, fixed with clip;
17) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
Described step 3 is specially in the front of n type heavy doping silicon chip and prepares a silicon dioxide layer, is dielectric isolation layer after the etching; On dielectric isolation layer, prepare a n type doped polysilicon layer then, be grid layer after the etching; In ensuing etching technics, need earlier grid layer to be carried out etching, and then dielectric isolation layer is carried out etching; Grid layer after the etching need expose the dielectric isolation layer of bottom, and its sidewall is perpendicular to n type heavy doping silicon chip surface plane; Need adopt isotropic wet-etching technology to dielectric isolation layer, the dielectric isolation layer after the etching need expose the n type heavy doping silicon chip surface of bottom, and forms respectively to both sides the arc expanded configuration is arranged;
Described step 14 is specially non-display area printing insulation paste [13] layer at anode conductive layer, is used to prevent the parasitic electrons emission; Through overbaking (baking temperature: 150 ℃, retention time: 5 minutes) afterwards, be placed on and carry out high temperature sintering (sintering temperature: 580 ℃, retention time: 10 minutes) in the sintering furnace;
Described step 16 is specially viewing area printing fluorescent material [14] layer on anode conductive layer; In the middle of baking oven, toast (baking temperature: 120 ℃, the retention time: 10 minutes);
The device that described step 17 is specially having assembled carries out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
The present invention has following good effect:
Feature of the present invention just is to have made short circuit prevention cathodic protection structure, is used to prevent to control the generation of short circuit phenomenon between grid and the carbon nanotube cathod; On the basis of the good field emission characteristics that makes full use of carbon nanotube cathod, grid and carbon nanotube cathod height are integrated together simultaneously, help further improving the power that is made into of device, reduce the operating voltage of device.
At first, the short circuit prevention cathodic protection structure among the present invention can prevent to control the generation of short circuit phenomenon between grid and the carbon nanotube cathod effectively.This has mainly all taked safeguard measure in following several respects, one, utilize the grid cover layer that grid layer is surrounded fully, make among the encirclement of grid layer for grid cover layer and dielectric isolation layer, certainly just do not had carbon nanotube cathod yet and controlled the chance that grid is in contact with one another, thereby prevented the generation of short circuit phenomenon between the two effectively; Its two, dielectric isolation layer has been adopted isotropic wet etching, make dielectric isolation layer after the etching both expose surface except the n type heavy doping silicon chip of bottom, also forming respectively to both sides simultaneously has the arc expanded configuration; Its three, at first made a secondary n type doped polysilicon layer on the surface of n type heavy doping silicon chip, and the upper surface of secondary doping polysilicon layer is an arcuate shape to upper process; This has just expanded the space of carbon nanotube cathod present position, avoids poly-phenomenon of carbon nanotube cathod, has prevented that effectively control grid and carbon nanotube cathod are in contact with one another the appearance of phenomenon.
Secondly, control grid and carbon nanotube cathod in the short circuit prevention cathodic protection structure in the present invention are integrated together, and the control grid plays control action for the electronics emission of carbon nanotube cathod.In the process of making short circuit prevention cathodic protection structure; just made grid layer; and it is in the middle of the tectal encirclement of grid; on intermediate metal, carried out at last the growth of carbon nanotube cathod in conjunction with the direct growth method; thereby will control grid and the carbon nanotube cathod height is integrated together; reduce the manufacture craft flow process of device, also greatly avoided the damage of carbon nanotube cathod simultaneously, helped further improving the power that is made into of integral device.When after applying appropriate voltage on the control grid, will form powerful electric field strength on top, carbon nanotube cathod surface, force carbon nano-tube to launch a large amount of electronics, this also with regard to favourable proof grid carbon nanotube cathod is played irreplaceable control action.
The 3rd; in the short circuit prevention cathodic protection structure in the present invention; on intermediate metal, made catalyst metal layer; this has just done sufficient preparation for the growth of the carbon nanotube cathod in the subsequent technique; so just can be at the surperficial direct growth carbon nanotube cathod of intermediate metal; make grid structure and carbon nanotube cathod structure height be integrated together; help further improving the display resolution of device; simultaneously, made full use of the good field emission characteristics that carbon nanotube cathod possessed of direct growth method preparation.
In addition; in the short circuit prevention cathodic protection structure in the present invention; do not adopt special structure fabrication material; do not adopt special device making technics yet; this has just further reduced the cost of manufacture of integral device to a great extent; simplify the manufacturing process of device, helped carrying out business-like large-scale production.
Description of drawings
Fig. 1 has provided the vertical structure schematic diagram of short circuit prevention cathodic protection structure.
Fig. 2 has provided the transversary schematic diagram of short circuit prevention cathodic protection structure.
Provided the structural representation of the embodiment of a carbon nanotube cathod field emission flat-panel screens that has a short circuit prevention cathodic protection structure among Fig. 3.
Embodiment
Below in conjunction with drawings and Examples the present invention is further specified, but the present invention is not limited to these embodiment.
Described a kind of flat-panel monitor that has short circuit prevention cathodic protection structure, comprise by cathode glass faceplate [10], anode glass panel [11] and all around glass enclose the sealed vacuum chamber that frame [16] is constituted; The phosphor powder layer [14] on anode conductive layer [12] at anode conductive layer [12] that photoetching is arranged on the anode glass panel [11] and preparation; Carbon nanotube cathod [9], control grid [4] and short circuit prevention cathodic protection structure that preparation is arranged on cathode glass faceplate [10]; Supporting wall structure between anode glass panel and cathode glass faceplate [15] and getter [17] subsidiary component.
Described short circuit prevention cathodic protection structure comprises substrate [1], cathode conductive layer [2], dielectric isolation layer [3], grid layer [4], grid cover layer [5], secondary doping polysilicon layer [6], intermediate metal [7], catalyst metal layer [8], carbon nano-tube [9] part.
The backing material of described short circuit prevention cathodic protection structure is a doped silicon wafer, and its doping type is the heavy doping of n type; There is cathode conductive layer in the dorsal part of n type heavy doping silicon chip; There is dielectric isolation layer in the front of n type heavy doping silicon chip; Grid layer of the top existence of dielectric isolation layer; Dielectric isolation layer and grid layer can carry out etching, its etching is in proper order for carrying out etching to grid layer earlier, expose the dielectric isolation layer of bottom, the sidewall of the grid layer after the etching is perpendicular to n type heavy doping silicon chip surface plane, and then dielectric isolation layer carried out isotropic wet etching, need expose the n type heavy doping silicon chip surface of bottom; Dielectric isolation layer after the etching forms respectively to both sides the arc expanded configuration; There is the grid cover layer in the upper surface of n type heavy doping silicon chip; Grid cover layer after the etching need cover doped polysilicon layer fully, but will expose the surface of bottom n type heavy doping silicon chip; There is the secondary doping polysilicon layer in surface at the n type heavy doping silicon chip that exposes, secondary doping polysilicon layer after etching bottom is that the surface with n type heavy doping silicon chip is in contact with one another, but the upper surface of secondary doping polysilicon layer presents an arcuate shape to upper process; The secondary doping polysilicon layer above the upper process arcuate shape, have transition zone; Catalyst metal layer of the top existence of transition zone; Can utilize catalyst layer to carry out the preparation of carbon nano-tube.
The fixed position of described short circuit prevention cathodic protection structure is for being fixed on the cathode glass faceplate.Cathode conductive layer can be metallic gold, silver, molybdenum, chromium, aluminium.The doping type of grid layer can be the n type, also can be the p type.The doping type of secondary doping polysilicon layer can be the n type, also can be the p type.Transition zone can be metallic gold, silver, molybdenum, chromium, tin, indium, platinum.Catalyst layer can be metallic iron, cobalt, nickel.
A kind of manufacture craft that has the flat-panel monitor of short circuit prevention cathodic protection structure, its manufacture craft is as follows:
1) making of substrate [1]: n type heavy doping silicon chip is carried out scribing, form substrate [1];
2) making of cathode conductive layer [2]: the dorsal part at n type heavy doping silicon chip is prepared a molybdenum layer, forms cathode conductive layer [2] after the etching;
3) making of dielectric isolation layer [3] and grid layer [4]: a silicon dioxide layer is prepared in the front at n type heavy doping silicon chip, is dielectric isolation layer after the etching; On dielectric isolation layer, prepare a n type doped polysilicon layer then, be grid layer after the etching;
4) making of grid cover layer [5]: the upper surface at n type heavy doping silicon chip is prepared a silicon dioxide layer once more, and the grid cover layer after the etching need cover doped polysilicon layer fully, but will expose the surface of bottom n type heavy doping silicon chip;
5) making of secondary doping polysilicon layer [6]: the surface preparation at the n type heavy doping silicon chip that exposes goes out a secondary n type doped polysilicon layer, secondary doping polysilicon layer after etching bottom is that the surface with n type heavy doping silicon chip is in contact with one another, but the upper surface of secondary doping polysilicon layer presents an arcuate shape to upper process;
6) making of intermediate metal [7]: the secondary doping polysilicon layer above the upper process arcuate shape, prepare a chromium metal level, form intermediate metal after the etching;
7) making of catalyst metal layer [8]: on intermediate metal, prepare a nickel metal layer, form catalyst metal layer after the etching;
8) cleaning surfaces of short circuit prevention cathodic protection structure: clean is carried out on the surface to short circuit prevention cathodic protection structure, removes impurity and dust;
9) preparation of carbon nano-tube [9]: utilize catalyst layer to prepare carbon nano-tube;
10) reprocessing of carbon nano-tube: carbon nano-tube is carried out reprocessing, improve field emission characteristics;
11) making of cathode glass faceplate [10]: sodium calcium plate glass is carried out scribing, form cathode glass faceplate;
12) making of anode glass panel [11]: sodium calcium plate glass is carried out scribing, form the anode glass panel;
13) making of anode conductive layer [12]: evaporation one deck tin indium oxide rete on the anode glass panel forms anode conductive layer after the etching;
14) making of insulation paste layer [13]: the non-display area at anode conductive layer prepares the insulation paste layer;
15) making of phosphor powder layer [14]: the viewing area on anode conductive layer prepares phosphor powder layer;
16) device assembling: with cathode glass faceplate, anode glass panel, supporting wall structure [15], glass encloses frame [16] and short circuit prevention cathodic protection structure is assembled together all around, and getter [17] put in the middle of the cavity, fix with glass powder with low melting point; Around face glass, smeared glass powder with low melting point, fixed with clip;
17) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
Described step 3 is specially in the front of n type heavy doping silicon chip and prepares a silicon dioxide layer, is dielectric isolation layer after the etching; On dielectric isolation layer, prepare a n type doped polysilicon layer then, be grid layer after the etching; In ensuing etching technics, need earlier grid layer to be carried out etching, and then dielectric isolation layer is carried out etching; Grid layer after the etching need expose the dielectric isolation layer of bottom, and its sidewall is perpendicular to n type heavy doping silicon chip surface plane; Need adopt isotropic wet-etching technology to dielectric isolation layer, the dielectric isolation layer after the etching need expose the n type heavy doping silicon chip surface of bottom, and forms respectively to both sides the arc expanded configuration is arranged;
Described step 14 is specially non-display area printing insulation paste [13] layer at anode conductive layer, is used to prevent the parasitic electrons emission; Through overbaking (baking temperature: 150 ℃, retention time: 5 minutes) afterwards, be placed on and carry out high temperature sintering (sintering temperature: 580 ℃, retention time: 10 minutes) in the sintering furnace;
Described step 16 is specially viewing area printing fluorescent material [14] layer on anode conductive layer; In the middle of baking oven, toast (baking temperature: 120 ℃, the retention time: 10 minutes);
The device that described step 17 is specially having assembled carries out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
Claims (6)
1, a kind of flat-panel monitor that has short circuit prevention cathodic protection structure, comprise by cathode glass faceplate [10], anode glass panel [11] and all around glass enclose the sealed vacuum chamber that frame [16] is constituted; The phosphor powder layer [14] on anode conductive layer [12] at anode conductive layer [12] that photoetching is arranged on the anode glass panel [11] and preparation; Supporting wall structure between anode glass panel and cathode glass faceplate [15] and getter [17] subsidiary component; It is characterized in that:
Carbon nanotube cathod [9], control grid [4] and short circuit prevention cathodic protection structure that preparation is arranged on cathode glass faceplate [10];
The backing material of described short circuit prevention cathodic protection structure is a doped silicon wafer, and its doping type is the heavy doping of n type; There is cathode conductive layer [2] in the dorsal part of n type heavy doping silicon chip; There is dielectric isolation layer [3] in the front of n type heavy doping silicon chip; A grid layer of the top existence of dielectric isolation layer [3] [4]; Dielectric isolation layer [3] and grid layer [4] carry out etching, its etching is in proper order for carrying out etching to grid layer [4] earlier, expose the dielectric isolation layer [3] of bottom, the sidewall of the grid layer after the etching [4] is perpendicular to n type heavy doping silicon chip surface plane, and then dielectric isolation layer [3] carried out isotropic wet etching, need expose the n type heavy doping silicon chip surface of bottom; Dielectric isolation layer after the etching [3] forms respectively to both sides the arc expanded configuration; There is grid cover layer [5] in the upper surface of n type heavy doping silicon chip; Grid cover layer [5] after the etching needs complete cover grid layer [4], but will expose the surface of bottom n type heavy doping silicon chip; There is secondary doping polysilicon layer [6] in surface at the n type heavy doping silicon chip that exposes, secondary doping polysilicon layer after etching bottom is that the surface with n type heavy doping silicon chip is in contact with one another, but the upper surface of secondary doping polysilicon layer [6] presents an arcuate shape to upper process; Secondary doping polysilicon layer [6] above the upper process arcuate shape, have an intermediate metal [7]; A catalyst metal layer of the top existence of intermediate metal [7] [8]; Utilize catalyst metal layer [8] to carry out the preparation of carbon nano-tube.
2, the flat-panel monitor that has short circuit prevention cathodic protection structure as claimed in claim 1; it is characterized in that: the fixed position of described short circuit prevention cathodic protection structure is for being fixed on the cathode glass faceplate; cathode conductive layer is one of metal gold, silver, molybdenum, chromium, aluminium; the doping type of grid layer is n type or p type; the doping type of secondary doping polysilicon layer is n type or p type; transition zone is one of metal gold, silver, molybdenum, chromium, tin, indium, platinum, and catalyst layer is one of metallic iron, cobalt, nickel.
3, a kind of manufacture craft that has the flat-panel monitor of short circuit prevention cathodic protection structure, it is characterized in that: its manufacture craft is as follows:
1) making of substrate [1]: n type heavy doping silicon chip is carried out scribing, form substrate [1];
2) making of cathode conductive layer [2]: the dorsal part at n type heavy doping silicon chip is prepared a metal level, forms cathode conductive layer [2] after the etching;
3) making of dielectric isolation layer [3] and grid layer [4]: a silicon dioxide layer is prepared in the front at n type heavy doping silicon chip, is dielectric isolation layer [3] after the etching; On dielectric isolation layer [3], prepare a n type doped polysilicon layer then, be grid layer [4] after the etching; In ensuing etching technics, need earlier grid layer to be carried out etching, and then dielectric isolation layer is carried out etching; Grid layer after the etching need expose the dielectric isolation layer of bottom, and its sidewall is perpendicular to n type heavy doping silicon chip surface plane; Need adopt isotropic wet-etching technology to dielectric isolation layer, the dielectric isolation layer after the etching need expose the n type heavy doping silicon chip surface of bottom, and forms respectively to both sides the arc expanded configuration is arranged;
4) making of grid cover layer [5]: the upper surface at n type heavy doping silicon chip is prepared a silicon dioxide layer once more, and the grid cover layer after the etching need cover doped polysilicon layer fully, but will expose the surface of bottom n type heavy doping silicon chip;
5) making of secondary doping polysilicon layer [6]: the surface preparation at the n type heavy doping silicon chip that exposes goes out a secondary n type doped polysilicon layer, secondary doping polysilicon layer after etching bottom is that the surface with n type heavy doping silicon chip is in contact with one another, but the upper surface of secondary doping polysilicon layer presents an arcuate shape to upper process;
6) making of intermediate metal [7]: the secondary doping polysilicon layer above the upper process arcuate shape, prepare a metal level, form intermediate metal after the etching;
7) making of catalyst metal layer [8]: on intermediate metal, prepare a metal level, form catalyst metal layer after the etching;
8) cleaning surfaces of short circuit prevention cathodic protection structure: clean is carried out on the surface to short circuit prevention cathodic protection structure, removes impurity and dust;
9) preparation of carbon nano-tube [9]: utilize catalyst layer to prepare carbon nano-tube;
10) making of cathode glass faceplate [10]: sodium calcium plate glass is carried out scribing, form cathode glass faceplate;
11) making of anode glass panel [11]: sodium calcium plate glass is carried out scribing, form the anode glass panel;
12) making of anode conductive layer [12]: evaporation one deck tin indium oxide rete on the anode glass panel forms anode conductive layer after the etching;
13) making of insulation paste layer [13]: the non-display area at anode conductive layer prepares the insulation paste layer;
14) making of phosphor powder layer [14]: the viewing area on anode conductive layer prepares phosphor powder layer;
15) device assembling: with cathode glass faceplate, anode glass panel, supporting wall structure [15], glass encloses frame [16] and short circuit prevention cathodic protection structure is assembled together all around, and getter [17] put in the middle of the cavity, fix with glass powder with low melting point; Around face glass, smear glass powder with low melting point, fix with clip;
16) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
4, the manufacture craft that has the flat-panel monitor of short circuit prevention cathodic protection structure as claimed in claim 3 is characterized in that: described step 13 is specially non-display area printing insulation paste [13] layer at anode conductive layer, is used to prevent the parasitic electrons emission; Through overbaking, baking temperature: 150 ℃, the retention time: after 5 minutes, be placed on and carry out high temperature sintering in the sintering furnace, sintering temperature: 580 ℃, the retention time: 10 minutes.
5, the manufacture craft that has the flat-panel monitor of short circuit prevention cathodic protection structure as claimed in claim 3 is characterized in that: described step 14 is specially viewing area printing fluorescent material [14] layer on anode conductive layer; In the middle of baking oven, toast baking temperature: 120 ℃, the retention time: 10 minutes.
6, the manufacture craft that has the flat-panel monitor of short circuit prevention cathodic protection structure as claimed in claim 3 is characterized in that: the device that described step 16 is specially having assembled carries out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out high temperature sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100485135A CN100555537C (en) | 2006-08-02 | 2006-08-02 | The flat-panel monitor and the manufacture craft thereof that have short circuit prevention cathodic protection structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100485135A CN100555537C (en) | 2006-08-02 | 2006-08-02 | The flat-panel monitor and the manufacture craft thereof that have short circuit prevention cathodic protection structure |
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| Publication Number | Publication Date |
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| CN1909159A CN1909159A (en) | 2007-02-07 |
| CN100555537C true CN100555537C (en) | 2009-10-28 |
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| CNB2006100485135A Expired - Fee Related CN100555537C (en) | 2006-08-02 | 2006-08-02 | The flat-panel monitor and the manufacture craft thereof that have short circuit prevention cathodic protection structure |
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