CN100552945C - The white light-emitting diode package structure of tool silica substrate and its manufacture method - Google Patents
The white light-emitting diode package structure of tool silica substrate and its manufacture method Download PDFInfo
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- CN100552945C CN100552945C CN 200710084924 CN200710084924A CN100552945C CN 100552945 C CN100552945 C CN 100552945C CN 200710084924 CN200710084924 CN 200710084924 CN 200710084924 A CN200710084924 A CN 200710084924A CN 100552945 C CN100552945 C CN 100552945C
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 84
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 42
- 239000000758 substrate Substances 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims description 96
- 238000004519 manufacturing process Methods 0.000 title description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 47
- 239000000463 material Substances 0.000 claims abstract description 18
- 239000000853 adhesive Substances 0.000 claims abstract description 12
- 230000001070 adhesive effect Effects 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 239000000843 powder Substances 0.000 claims description 20
- 230000008878 coupling Effects 0.000 claims description 19
- 238000010168 coupling process Methods 0.000 claims description 19
- 238000005859 coupling reaction Methods 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 12
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- 238000005234 chemical deposition Methods 0.000 claims description 8
- 238000001704 evaporation Methods 0.000 claims description 8
- 230000008020 evaporation Effects 0.000 claims description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 8
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 claims description 6
- 238000000465 moulding Methods 0.000 claims description 5
- 238000001020 plasma etching Methods 0.000 claims description 5
- 241001270131 Agaricus moelleri Species 0.000 claims description 4
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 3
- 238000004026 adhesive bonding Methods 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 3
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- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- 201000009310 astigmatism Diseases 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 241001419253 Spathiphyllum cochlearispathum Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
The present invention relates to a kind of white light-emitting diode package structure, comprise that a silica substrate, a plurality of recessed cup structure are located at the upper surface of silica substrate, a plurality of blue light diode is arranged at respectively in each recessed cup structure, and a phosphor structures is covered on the recessed cup structure of silica substrate.Above-mentioned blue light diode has a plurality of different wave-length coverages, and phosphor structures includes a multiple fluorescent material and an adhesive material, and various fluorescent material is to be used for respectively this blue light that blue light diode sent with different wavelength range respectively is converted into gold-tinted.
Description
Technical field
The invention relates to a kind of white light-emitting diode package structure and its manufacture method, especially refer to a kind of white light-emitting diode package structure and its manufacture method with silica substrate, having the good capacity of heat transmission and optically focused, and promote the rich of color rendering and tone.
Background technology
In recent years, white light emitting diode was the emerging product that is expected most and attracted attention by the whole world.It has little, the no thermal radiation of volume, power consumption is low, the life-span is long and the good advantage such as environment protecting that has concurrently again of reaction speed, can solve very many problems that incandescent lamp bulb was difficult to overcome in the past, thereby is considered as the lighting source of 21st century by American-European scientist.
Please refer to Fig. 1, Fig. 1 is known white light-emitting diode package structure generalized section.Known white light-emitting diode package structure 10 comprises a blue light diode 11, a board structure 12, electrode 13,14, a conductive pattern layer 15, and a phosphor body structure 16.Blue light diode 11 is the main light-emitting component of known white light-emitting diode package structure 10.Conductive pattern layer 15 can be arranged on the surface of board structure 12, and blue light diode 11 can be electrically connected on electrode 13,14 by conductive pattern layer 15 by modes such as metal deposition, exposure, developments.The acting as a part and can avoid outside blue light diode 11 directly injure of phosphor body structure 16, another part are that to be doped in the phototransformation that gold-tinted phosphor powder in the phosphor body structure 16 that contains epoxy resin has an absorption blue wavelength be the characteristic of the light of yellow wavelengths.By the setting of phosphor body structure 16, the part blue light that blue light diode 11 is launched can be absorbed by phosphor powder and be converted into outside the gold-tinted, and gold-tinted mixes with the blue light of another part again, and produces white light.
The shortcoming of existing technology is that at first white light-emitting diode package structure 10 only is provided with single blue light diode, then must be as if the light source that need provide brighter or area is bigger in conjunction with several white light-emitting diode package structures 10, because indivedual white light-emitting diode package structure 10 all occupies certain volume, the volume of light source is excessive with causing thus.Moreover, because about 25 nanometers of halfwidth of the wavelength of single blue light diode, but can't produce the blue light diode of a large amount of consistent wave-length coverages on the technology, therefore the present practice is for to divide into 450 ± 5 microns with the blue light diode of finishing, 460 ± 5 microns, 470 ± 5 microns three kinds of specifications, and develop respectively at these three kinds of specifications and corresponding three kinds of phosphor powders, to produce white light emitting diode, but because blue light diode condition control on making is difficult for causing easily the deviation of wavelength, even use the white light emitting diode of the blue light diode made of same specification still can produce the white light of different tones, and color rendering is low with white flag lamp than fluorescent lamp, tone rich also lower, therefore, though white light emitting diode is power saving comparatively, in order to allow the characteristic of white light emitting diode more meet natural daylight, having high color rendering and the white light that enriches tone with generation, is the target of desiring most ardently pursuit for industry.
Summary of the invention
The object of the present invention is to provide a kind of white light-emitting diode package structure and its manufacture method, having the good capacity of heat transmission and optically focused, and promote the rich of color rendering and tone with silica substrate.
According to claim of the present invention, the present invention discloses a kind of white light-emitting diode package structure with silica substrate, it comprises a silica substrate, the upper surface of this silica substrate has a plurality of recessed cup structures, one reflector, be covered in the upper surface of this silica substrate, one transparent insulating layer, be covered on this reflector, a plurality of metal couplings, be arranged on this transparent insulating layer in this recessed cup structure respectively, a plurality of electrodes, be arranged at adjacent respectively between this recessed cup structure, a plurality of blue light diodes, described blue light diode has a plurality of different wave-length coverages and is arranged on this metal coupling in this recessed cup structure respectively respectively and a phosphor body structure, is covered on the described recessed cup structure of this silica substrate.This phosphor body structure includes a multiple phosphor powder and an adhesive material, and respectively this kind phosphor powder is to be used for respectively this blue light that blue light diode sent with different wavelength range respectively is converted into gold-tinted.
According to claim of the present invention, the present invention discloses a kind of making to have the method for the white light-emitting diode package structure of silica substrate, it comprises provides a wafer, and utilize an etch process to form a plurality of recessed cup structures in the upper surface of this wafer, then, upper surface in this wafer forms a reflector, on this reflector, form a transparent insulating layer again, on this transparent insulating layer of this recessed cup structure bottom respectively, form a plurality of metal couplings and a plurality of electrode then on adjacent respectively this transparent insulating layer between this recessed cup structure, at last a plurality of blue light diodes are engaged with respectively this metal coupling of this recessed cup structure bottom respectively respectively, and a plurality of blue light diodes are electrically connected with this electrode respectively respectively, wherein said blue light diode has different wave-length coverages and the phosphor powder of the wave-length coverage of corresponding each blue light diode mixed and adds an adhesive material, utilizes a sealing adhesive process to form a phosphor body structure then on described recessed cup structure.
The present invention is arranged at the silica substrate with the recessed cup structure of array by the blue light diode that will have different wave length, and add and mix corresponding phosphor powder, make blue light can fully mix, have high color rendering and the rich white light-emitting diode package structure of tone and produce with gold-tinted with broad wave spread.
Description of drawings
Fig. 1 is known white light-emitting diode package structure generalized section.
Fig. 2 has the generalized section of the white light-emitting diode package structure of silica substrate for a preferred embodiment of the present invention.
Fig. 3 for a preferred embodiment of the present invention have silica substrate white light-emitting diode package structure on look schematic diagram.
Fig. 4 has the generalized section of the white light-emitting diode package structure of silica substrate for another preferred embodiment of the present invention.
Fig. 5 to Figure 10 makes the method schematic diagram of a white light-emitting diode package structure for one embodiment of the present invention.
Figure 11 to Figure 16 makes the method schematic diagram of a white light-emitting diode package structure for another preferred embodiment of the present invention.
[main element symbol description]
10 white light-emitting diode package structures, 11 blue light diodes
12 board structures, 13,14 electrodes
15 conductive pattern layers, 16 phosphor body structure
100 white light-emitting diode package structures, 110 silica substrates
120 reflector, 130 transparent insulating layers
140 metal couplings, 150 electrodes
160 blue light diodes, 170 phosphor body structures
180 leads, 200 white light-emitting diode package structures
210 silica substrates, 220 reflector
230 transparent insulating layers, 240 conductive pattern layers
250 blue light diodes, 260 phosphor body structures
300 silica substrates, 310 recessed cup structures
320 reflector, 330 transparent insulating layers
340 metal couplings, 350 electrodes
360 blue light diodes, 370 leads
380 phosphor body structures, 400 silica substrates
410 recessed cup structures, 420 reflector
430 transparent insulating layers, 440 conductive pattern layers
450 blue light diodes, 460 phosphor body structures
Embodiment
Please refer to Fig. 2 and Fig. 3, Fig. 2 is the generalized section that has the white light-emitting diode package structure of silica substrate for one embodiment of the present invention, and Fig. 3 is for looking schematic diagram on the white light-emitting diode package structure shown in Figure 2.White light-emitting diode package structure 100 includes a silica substrate 110, a reflector 120, a transparent insulating layer 130, four metal couplings 140, a plurality of electrode 150, four blue light diodes 160 and phosphor body structures 170.The material of silica substrate 110 includes polysilicon, amorphous silicon or monocrystalline silicon, can be square silicon wafer or circular silicon wafer, and wherein can include integrated circuit or passive component.The upper surface of silica substrate 110 has the recessed cup structure of four depressions, the top view shape of its recessed cup structure is a square, and each recessed cup structure has angled side walls, is used for the side direction astigmatism of reflect blue diode 160, it is upwards luminous to allow the side direction astigmatism transfer to, improves light utilization efficiency.Reflector 120 is arranged at the upper surface of silica substrate 110, its material is metal or optical coating, make sidewall have albedo, be able to the sidelight of reflect blue diode 160, but in order to allow reflector 120 and the element insulating on it, transparent insulating layer 130 is arranged on the reflector 120, can makes reflector 120 and metal coupling 140 and electrode 150 not have electric connection.Each metal coupling 140 is arranged at respectively on the interior transparent insulating layer 130 of each recessed cup structure, is used for engaging recessed cup structure and blue light diode 160.Therefore, each blue light diode 160 is arranged on each metal coupling 140, and the positive electrode on each blue light diode 160 and negative electrode are connected to electrode 150 via lead 180 respectively.In addition, each blue light diode 160 has different wave-length coverages, and it includes 450 ± 5nm, 460 ± 5nm or three kinds of specifications of 470 ± 5nm, provides white light-emitting diode package structure 100 to have the wave-length coverage of broad.Electrode 150 is arranged between each adjacent recessed cup structure, has to electrically connect white light-emitting diodes encapsulating structure 100 and the external circuit function of (figure does not show).Phosphor body structure 170 is covered on four recessed cup structures, and fills up each recessed cup structure, and it is shaped as the flat-top Pyramid, and top surface is that smooth sidewall is then for tilting.Phosphor body structure 170 includes phosphor powder and adhesive material, wherein the composition of phosphor powder is that wave-length coverage according to each blue light diode 160 decides, be used for to have the gold-tinted that part blue light that the blue light diode 160 of different wavelength range sent is converted into the tool yellow wavelengths, the composition of adhesive material includes epoxy resin and silicon filler, and adhesive material is divided into solid-state envelope membrane material (Epoxy Molding Compound) and is used for moulding (Molding) technology and ends material (Liquid Encapsulant) with liquid envelope and be used for a glue (Encapsulating) technology.
Four recessed cup structures of silica substrate 110 upper surfaces are arranged for the short distance array configurations, distance is less than 10 microns between the wherein adjacent recessed cup structure, make the blue light diode 160 of four different wavelength range when mutual mixed light, can not cause interference effect, and, can have the light type of high evenness by the short distance configuration.More particularly, the light type that four blue light diodes that separate 160 are sent can be even as the light type that same blue light diode 160 sent, and the blue light diode 160 that can mix different wavelength range, allowing originally, 160 of a blue light diode has narrower wave spread, have the wave spread of broad via the blue light diode 160 that mixes four different wavelength range, allow the white light-emitting diode package structure of producing have high color rendering.In addition, silica substrate 110 is owing to be the silicon material, and other has the good capacity of heat transmission, helps blue light diode 160 to have good heat radiation when luminous.
Send blue light from blue light diode 160, a part of can be absorbed and be converted into gold-tinted by phosphor powder, then the gold-tinted that sends of phosphor powder again with the blue light of other parts, and form white light.Shown in the arrow among Fig. 2, in the present embodiment, the luminescence process of white light-emitting diode package structure 100 is the blue lights that send different wave-length coverages by the blue light diode 160 of four different wave lengths, utilize the sidewall of recessed cup structure that the astigmatic reflection of the side direction of blue light diode is made progress, allow the wherein a part of sodium yellow that is absorbed and be converted into different wavelength range respectively by the phosphor powder in the phosphor body structure 170 of blue light of four different wavelength range, other parts then with transform after sodium yellow be mixed into white light, utilize the sidewall of flat-top pyramid structure again, the white light of four blue lights with different wavelength range is assembled and mixed to the central authorities of phosphor body structure 170 after through the sidewall total reflection, thereby produce white light with high color rendering.
Please refer to Fig. 4, Fig. 4 has the generalized section of the white light-emitting diode package structure of silica substrate for another preferred embodiment of the present invention.For the purpose of simplifying the description, element same as described above and structure will not describe in detail in present embodiment.The white-light emitting light-emitting diode 200 of present embodiment includes a silica substrate 210, a reflector 220, a transparent insulating layer 230, a conductive pattern layer 240, four blue light diodes 250 and phosphor body structures 260, wherein conductive pattern layer 240 is arranged on the transparent insulating layer 230, and have electric connection (figure do not show) with external circuit, and each blue light diode 250 is to utilize to cover crystal type and be arranged on the conductive pattern layer 240 in each recessed cup structure on the silica substrate 210.
Comprehensive above-mentioned explanation, white light emitting diode of the present invention is that the blue light diode of four different wavelength range is arranged at respectively on the recessed cup structure of four array short distances arrangements on the silica substrate, utilize the phosphor powder mixing adhesive material that blue light diode developed then according to different wavelength range, with a plurality of blue light diode sealings on same silica substrate.But the present invention is not limited to only have the top view shape of the arrangement of four recessed cup structures, recessed cup structure not only not only has three kinds of different wave-length coverage specifications for square with blue light diode, and can have a plurality of recessed cup structures on the silica substrate, and the top view shape of recessed cup structure can be geometric figure and has multiple different wave-length coverage specification with blue light diode.
Please refer to Fig. 5 to Figure 10, Fig. 5 to Figure 10 makes the method schematic diagram of a white light-emitting diode package structure for one embodiment of the present invention.As shown in Figure 5, one wafer 300 at first is provided, a Silicon Wafer for example, and carry out an etch process and form a plurality of recessed cup structures 310 of array with hypotenuse in the upper surface of wafer 300, wherein etch process can use reactive ion etching (reactive ion etching, RIE) technology or the alternately dry etch process or use potassium hydroxide (KOH) solution of the plasma ion etching technique of etching method (BOSCH), tetramethyl ammonium hydroxide (TMAH) or ethylene diamine pyrocatechol (EDP) are the wet etch process of etching solution, be used for wafer 300 is etched the recessed cup structure 310 with hypotenuse, can be by the position of the recessed cup structure 310 of control, cup depth, recess width, factor such as sidewall shape and angle of inclination is produced needed optical effect.As shown in Figure 6, carry out technologies such as sputter, evaporation or chemical deposition and form a reflector 320 in the upper surface of wafer 300 with recessed cup structure 310.As shown in Figure 7, then, carry out technologies such as sputter, evaporation or chemical deposition and on reflector 320, form a transparent insulating layer 330.As shown in Figure 8, then, utilize methods such as deposition or plating, and cooperate photoetching etching or lift-off method (Lift off) to form a plurality of metal couplings 340 on the transparent insulating layer 330 of each recessed cup structure 310 bottom, simultaneously, form a plurality of electrodes 350 on the transparent insulating layer 330 of 310 of each adjacent recessed cup structures.As shown in Figure 9, the solid brilliant technology of carrying out the glass cement mull technique engages a plurality of blue light diodes 360 respectively with each metal coupling 340 of each recessed cup structure 310 bottom, and utilizes ultrasonic waves wire bonds mode that each blue light diode 360 is electrically connected by lead 370 and electrode 350 respectively.At last, as shown in figure 10, to mix and add an adhesive material corresponding to the phosphor powder of the wave-length coverage of each blue light diode 360, carry out a sealing adhesive process then and on recessed cup structure, form a phosphor body structure 380, promptly finish a white light-emitting diode package structure, wherein sealing adhesive process is moulding process or gluing process.
Please refer to Figure 11 to Figure 16, Figure 11 to Figure 16 makes the method schematic diagram of a white light-emitting diode package structure for another preferred embodiment of the present invention.For the purpose of simplifying the description, process same as described above will not describe in detail in present embodiment.As shown in figure 11, at first provide a wafer 400, a Silicon Wafer for example, and carry out an etch process and form a plurality of recessed cup structures 410 of array with hypotenuse in the upper surface of wafer 400.As shown in figure 12, carry out technologies such as sputter, evaporation or chemical deposition and form a reflector 420 in the upper surface of wafer 400 with recessed cup structure 410.As shown in figure 13, then, carry out technologies such as sputter, evaporation or chemical deposition and on reflector 420, form a transparent insulating layer 430.As shown in figure 14, then, utilize methods such as deposition or plating, and cooperate photoetching etching or lift-off method to form a conductive pattern layer 440 on transparent insulating layer 430.As shown in figure 15, carrying out chip bonding (Flip chip) subsequently engages each blue light diode 450 respectively with the conductive pattern layer 440 of each recessed cup structure 410 bottom.At last, as shown in figure 16, to mix corresponding to the phosphor powder of the wave-length coverage of each blue light diode 450 and add an adhesive material, and carry out a sealing adhesive process then and on recessed cup structure, form a phosphor body structure 460, promptly finish a white light-emitting diode package structure.
Combine it, white light-emitting diode package structure of the present invention has the blue light diode of different wave length and is arranged at the silica substrate with the recessed cup structure of array, and cooperate the phosphor powder that adds the blue light diode that corresponds to different wave length, make white light emitting diode include the blue light and the gold-tinted of broad wave spread, and by electroplating or micro electronmechanical technology such as deposition or semiconductor technology are produced the white light-emitting diode package structure of the blue light diode that can mix different wave length, thereby have high color rendering and the rich characteristic of tone.
The above only is the preferred embodiments of the present invention, and all equalizations of being done according to the present patent application claim change and modify, and all should belong to covering scope of the present invention.
Claims (36)
1. white light-emitting diode package structure with silica substrate, it includes:
One silica substrate, the upper surface of this silica substrate have a plurality of recessed cup structures;
One reflector is covered in the upper surface of this silica substrate;
One transparent insulating layer is covered on this reflector;
A plurality of metal couplings are arranged on this transparent insulating layer in this recessed cup structure respectively;
A plurality of electrodes are arranged at adjacent respectively between this recessed cup structure;
A plurality of blue light diodes, described blue light diode have a plurality of different wave-length coverages, and are arranged at respectively on this metal coupling in this recessed cup structure respectively, and described blue light diode is electrically connected to described electrode; And
One phosphor body structure, be covered on the described recessed cup structure of this silica substrate, this phosphor body structure includes a multiple phosphor powder and an adhesive material, and respectively this kind phosphor powder is to be used for respectively this blue light that blue light diode sent with different wavelength range respectively is converted into gold-tinted.
2. white light-emitting diode package structure as claimed in claim 1, wherein respectively the top view shape of this recessed cup structure is to be geometric figure.
3. white light-emitting diode package structure as claimed in claim 1, wherein said recessed cup structure are to be array way to arrange.
4. white light-emitting diode package structure as claimed in claim 1, wherein adjacent respectively between this recessed cup structure apart from less than 10 microns.
5. white light-emitting diode package structure as claimed in claim 1, the wave-length coverage of wherein said blue light diode include 450 ± 5nm, 460 ± 5nm or three kinds of specifications of 470 ± 5nm.
6. white light-emitting diode package structure as claimed in claim 1, wherein this phosphor body structure is to be a flat-top Pyramid, and the upper surface of this flat-top Pyramid is for smooth, sidewall is for tilting.
7. white light-emitting diode package structure as claimed in claim 1, wherein respectively the sidewall of this recessed cup structure is inclination.
8. white light-emitting diode package structure as claimed in claim 1, wherein this reflector is to be metal or optical coating.
9. a making has the method for the white light-emitting diode package structure of silica substrate, and it includes:
One wafer is provided, and utilizes an etch process to form a plurality of recessed cup structures in the upper surface of this wafer;
Form the upper surface of a reflector in this wafer;
Form a transparent insulating layer on this reflector;
Form a plurality of metal couplings on this transparent insulating layer of this recessed cup structure bottom respectively and a plurality of electrodes on adjacent respectively this transparent insulating layer between this recessed cup structure;
A plurality of blue light diodes are engaged with respectively this metal coupling of this recessed cup structure bottom respectively respectively, and with a plurality of blue light diodes respectively with respectively this electrode electric connection, wherein said blue light diode has different wave-length coverages; And
The phosphor powder of the wave-length coverage of corresponding each blue light diode is mixed and add an adhesive material, utilize a sealing adhesive process on described recessed cup structure, to form a phosphor body structure then.
10. method as claimed in claim 9, wherein respectively this recessed cup structure has angled side walls.
11. as the method for claim 10, this etch process of wherein making the sloped sidewall of described recessed cup structure includes the use reactive ion etching technique.
12. as the method for claim 10, this etch process of wherein making the sloped sidewall of described recessed cup structure includes the alternately plasma ion etching technique of etching method of use.
13. as the method for claim 10, this etch process of wherein making the sloped sidewall of described recessed cup structure includes and uses the wet etch process of potassium hydroxide solution as etching solution.
14. as the method for claim 10, this etch process of wherein making the sloped sidewall of described recessed cup structure includes and uses the wet etch process of tetramethyl ammonium hydroxide as etching solution.
15. as the method for claim 10, this etch process of wherein making the sloped sidewall of described recessed cup structure includes and uses the wet etch process of ethylene diamine pyrocatechol as etching solution.
16. method as claimed in claim 9, wherein this reflector is to utilize sputter, evaporation or chemical deposition mode to be formed on this wafer.
17. method as claimed in claim 9, wherein this transparent insulating layer is to utilize sputter, evaporation or chemical deposition mode to be formed on this reflector.
18. method as claimed in claim 9, wherein said metal coupling are to utilize lift-off method to be formed on this transparent insulating layer.
19. method as claimed in claim 9, wherein said metal coupling are to utilize galvanoplastic to be formed on this transparent insulating layer.
20. method as claimed in claim 9, wherein said blue light diode are to utilize the glass cement mull technique to engage with described metal coupling.
21. method as claimed in claim 9, wherein this sealing adhesive process is to be a moulding process.
22. method as claimed in claim 9, wherein this sealing adhesive process is to be a gluing process.
23. a making has the method for the white light-emitting diode package structure of silica substrate, it includes:
One wafer is provided, and utilizes an etch process to form a plurality of recessed cup structures in the upper surface of this wafer;
Form the upper surface of a reflector in this wafer;
Form a transparent insulating layer on this reflector;
Form a conductive pattern layer on this transparent insulating layer;
A plurality of blue light diodes are engaged with this conductive pattern layer of this recessed cup structure bottom respectively respectively, and wherein said blue light diode has different wave-length coverages; And
The phosphor powder of the wave-length coverage of corresponding each blue light diode is mixed and add an adhesive material, utilize a sealing adhesive process on described recessed cup structure, to form a phosphor body structure then.
24. as the method for claim 23, wherein respectively this recessed cup structure has angled side walls.
25. as the method for claim 24, this etch process of wherein making the sloped sidewall of described recessed cup structure includes the use reactive ion etching technique.
26. as the method for claim 24, this etch process of wherein making the sloped sidewall of described recessed cup structure includes the alternately plasma ion etching technique of etching method of use.
27. as the method for claim 24, this etch process of wherein making the sloped sidewall of described recessed cup structure includes and uses the wet etch process of potassium hydroxide solution as etching solution.
28. as the method for claim 24, this etch process of wherein making the sloped sidewall of described recessed cup structure includes and uses the wet etch process of tetramethyl ammonium hydroxide as etching solution.
29. as the method for claim 24, this etch process of wherein making the sloped sidewall of described recessed cup structure includes and uses the wet etch process of ethylene diamine pyrocatechol as etching solution.
30. as the method for claim 23, wherein this reflector is to utilize sputter, evaporation or chemical deposition mode to be formed on this wafer.
31. as the method for claim 23, wherein this transparent insulating layer is to utilize sputter, evaporation or chemical deposition mode to be formed on this reflector.
32. as the method for claim 23, wherein this conductive pattern layer is to utilize lift-off method to be formed on this transparent insulating layer.
33. as the method for claim 23, wherein this conductive pattern layer is to utilize galvanoplastic to be formed on this transparent insulating layer.
34. as the method for claim 23, wherein said blue light diode is to utilize the chip bonding mode to engage with this conductive pattern layer.
35. as the method for claim 23, wherein this sealing adhesive process is to be a moulding process.
36. as the method for claim 23, wherein this sealing adhesive process is to be a gluing process.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200710084924 CN100552945C (en) | 2007-02-16 | 2007-02-16 | The white light-emitting diode package structure of tool silica substrate and its manufacture method |
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| CN 200710084924 CN100552945C (en) | 2007-02-16 | 2007-02-16 | The white light-emitting diode package structure of tool silica substrate and its manufacture method |
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| CN100552945C true CN100552945C (en) | 2009-10-21 |
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| CN102427075B (en) * | 2010-10-12 | 2013-08-21 | 友达光电股份有限公司 | Light emitting diode device and field sequence display |
| CN102447040A (en) * | 2010-10-14 | 2012-05-09 | 展晶科技(深圳)有限公司 | Packaging structure of light emitting diode and manufacturing method thereof |
| CN102468406B (en) * | 2010-11-19 | 2014-11-05 | 展晶科技(深圳)有限公司 | LED (Light Emitting Diode) packaging structure and manufacturing method thereof |
| TWI431813B (en) * | 2011-02-24 | 2014-03-21 | Genesis Photonics Inc | Light emitting diode components |
| CN102610736A (en) * | 2012-03-29 | 2012-07-25 | 中微光电子(潍坊)有限公司 | White-light LED (Light-Emitting Diode) device |
| CN102637785A (en) * | 2012-04-13 | 2012-08-15 | 厦门多彩光电子科技有限公司 | Die-bonding method for increasing color-rendering index of light emitting diode |
| TW201403788A (en) * | 2012-07-06 | 2014-01-16 | Lextar Electronics Corp | LED array module |
| CN106299079A (en) * | 2015-06-24 | 2017-01-04 | 严敏 | The method for packing of a kind of composite LED glass base plane and panel |
| CN106449626A (en) * | 2016-12-13 | 2017-02-22 | 易美芯光（北京）科技有限公司 | Double-chip blue-light healthful LED light source |
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