CN100548504C - The preparation method of piezoelectric combining jet device - Google Patents
The preparation method of piezoelectric combining jet device Download PDFInfo
- Publication number
- CN100548504C CN100548504C CNB2007100180451A CN200710018045A CN100548504C CN 100548504 C CN100548504 C CN 100548504C CN B2007100180451 A CNB2007100180451 A CN B2007100180451A CN 200710018045 A CN200710018045 A CN 200710018045A CN 100548504 C CN100548504 C CN 100548504C
- Authority
- CN
- China
- Prior art keywords
- silicon substrate
- piezoelectric
- cavity
- silicon
- adopt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Micromachines (AREA)
Abstract
The invention discloses a kind of preparation method of piezoelectric combining jet device, this method is at first polished the upper and lower surface of silicon substrate, adopt Low Pressure Chemical Vapor Deposition deposited silicon nitride layer on silicon substrate then, lower surface photoetching at silicon substrate forms mask, according to the shape and size of cavity, adopt electrochemical erosion method or adopt the selectivity ion to inject the mode that forms high resistance area to prepare porous silicon layer; Remove silicon substrate lower surface cavity position silicon nitride layer in addition, lower surface at silicon substrate adopts Low Pressure Chemical Vapor Deposition deposition vibrating diaphragm, surface deposition top electrode at vibrating diaphragm, adopt sol-gel process to prepare piezoelectric, lower surface deposition bottom electrode at piezoelectric, in the upper surface photoetching of silicon substrate and carry out the inductive couple plasma etching and form spout, discharge porous silicon and form cavity.Because cavity, spout, vibrating diaphragm and piezoelectric membrane machine on same silicon substrate, have improved combining jet device reliability and uniformity.
Description
Technical field
The present invention relates to a kind of piezoelectric combining jet device, also relate to the preparation method of this combining jet device.
Background technology
Combining jet device is one of device important in the mobile control field, it adopts type of drive such as piezoelectricity, static or electromagnetism to make its flexible sheet produce vibration, thereby cause the cyclically-varying of cavity volume, thus ambient atmos is constantly sucked and discharges cavity by spout, under the situation that does not need extra source of the gas, produce the synthesis type jet, realize the ACTIVE CONTROL in flow field.
With reference to Fig. 3.Document " patent No. is US 6; 457; 654 United States Patent (USP) Micromachined synthetic jet actuators andapplications thereof " discloses a kind of piezoelectric combining jet device, this combining jet device adopts the MEMS lithographic technique to process the cavity 2 and spout 5 structures of combining jet device on silicon chip, with bonding method vibrating diaphragm 3 and piezo-activator 4 are assembled with said structure again, finish device fabrication.This technology has obtained the miniature jet device of millimeter magnitude size, but its technique for sticking has also brought problems such as production efficiency, product reliability and uniformity reduction.Simultaneously, owing to adopted wet etching technique, the cavity 2 of device and spout 5 structural profile geometries all are tapers.This has reduced cavity volume and spout aperture under the same external dimensions condition, influenced the speed and the energy of the synthesizing jet-flow of device generation.
Summary of the invention
In order to overcome the reliability that prior art is brought owing to technique for sticking, the deficiency that uniformity is low, the invention provides a kind of piezoelectric combining jet device and preparation method thereof, this method adopts electrochemical erosion method, prepare porous silicon layer in the cavity position, discharge porous silicon at last and form cavity, adopt the inductive couple plasma etching to form spout, adopt Low Pressure Chemical Vapor Deposition depositing silicon vibrating diaphragm, adopt sol-gel process to prepare piezoelectric membrane, cavity, spout, vibrating diaphragm and piezoelectric membrane machine on same silicon substrate, can improve combining jet device reliability and uniformity.
The technical solution adopted for the present invention to solve the technical problems: a kind of piezoelectric combining jet device, comprise silicon substrate, cavity, spout, vibrating diaphragm and piezo-activator, the below of silicon substrate is a cavity, be positioned at cavity top and what connect with cavity is spout, cavity and spout through-silicon matrix, vibrating diaphragm is positioned at the lower surface of silicon substrate, and below cavity, form suspended membrane, piezo-activator is positioned at the lower surface central authorities of vibrating diaphragm, be characterized in described piezo-activator by piezoelectric, and the top electrode and the bottom electrode formation that are attached at its upper and lower surface.
The cross sectional shape of described cavity, spout, vibrating diaphragm and piezo-activator is prismatic square, rectangle or circle.
Described vibrating diaphragm, its material are polysilicon, monocrystalline silicon or metal material.
Described piezoelectric is PZT piezoceramic material or PVDF polymeric piezoelectric material.
A kind of preparation method of above-mentioned piezoelectric combining jet device, be characterized in may further comprise the steps: at first the upper and lower surface of silicon substrate is polished, adopt Low Pressure Chemical Vapor Deposition deposited silicon nitride layer on silicon substrate then, lower surface photoetching at silicon substrate forms mask, shape and size according to cavity, adopt electrochemical erosion method to prepare porous silicon layer, perhaps adopt the selectivity ion to inject the mode that forms high resistance area and prepare porous silicon layer; Remove silicon substrate lower surface cavity position silicon nitride layer in addition, lower surface at silicon substrate adopts Low Pressure Chemical Vapor Deposition deposition vibrating diaphragm, surface deposition top electrode at vibrating diaphragm, adopt sol-gel process to prepare piezoelectric, lower surface deposition bottom electrode at piezoelectric, in the upper surface photoetching of silicon substrate and carry out the inductive couple plasma etching and form spout, discharge porous silicon and form cavity
The invention has the beneficial effects as follows: owing to adopt electrochemical erosion method, prepare porous silicon layer in the cavity position, discharge porous silicon at last and form cavity, adopt the inductive couple plasma etching to form spout, adopt Low Pressure Chemical Vapor Deposition depositing silicon vibrating diaphragm, adopt sol-gel process to prepare piezoelectric membrane, cavity, spout, vibrating diaphragm and piezoelectric membrane machine on same silicon substrate, have improved combining jet device reliability and uniformity.
Below in conjunction with drawings and Examples the present invention is elaborated.
Description of drawings
Fig. 1 is a piezoelectric combining jet device structural representation of the present invention.
Fig. 2 is the vertical view of Fig. 1.
Fig. 3 is a prior art piezoelectric combining jet device structural representation.
Among the figure, 1-silicon substrate, 2-cavity, 3-vibrating diaphragm, 4-piezo-activator, 5-spout, 6-top electrode, 7-bottom electrode.
The specific embodiment
With reference to Fig. 1, Fig. 2.The present invention includes silicon substrate 1, cavity 2, spout 5, vibrating diaphragm 3, piezo-activator 4, top electrode 6 and bottom electrode 7.The below of silicon substrate 1 is that the cross section is foursquare cavity 2, is positioned at cavity 2 tops and what connect with cavity 2 is that the cross section is foursquare spout 5, cavity 2 and spout 5 through-silicon matrixes 1, and spout 5 connects cavity 2 and outside flow fields.Vibrating diaphragm 3 is a polycrystalline silicon material, is positioned at the lower surface of silicon substrate 1, and forms suspended membrane below cavity 2.Piezo-activator 4 is by the PZT piezoceramic material, and the top electrode 6 and bottom electrode 7 formations that are attached at its upper and lower surface, is positioned at the lower surface central authorities of vibrating diaphragm 3.Wherein, the cross sectional shape of vibrating diaphragm 3, piezo-activator 4 is square.
The cross sectional shape of cavity 2, spout 5, vibrating diaphragm 3 and piezo-activator 4 is made rectangle or circle is tested, also all obtained good effect.
In addition, vibrating diaphragm 3 material therefors have also been carried out the test of monocrystalline silicon and metal material, respond well.
Piezo-activator 4 has also used the PVDF polymeric piezoelectric material, has all obtained good effect.
The preparation method of piezoelectric combining jet device is as follows: at first the upper and lower surface of silicon substrate 1 is polished, adopt Low Pressure Chemical Vapor Deposition deposited silicon nitride layer on silicon substrate 1, lower surface photoetching at silicon substrate 1 forms mask, shape and size according to cavity 2, adopt electrochemical erosion method to prepare porous silicon layer, remove silicon substrate 1 lower surface cavity 2 positions silicon nitride layer in addition, lower surface at silicon substrate 1 adopts the Low Pressure Chemical Vapor Deposition deposit spathic silicon as vibrating diaphragm 3, surface deposition top electrode 6 at vibrating diaphragm 3, adopt sol-gel process to prepare piezoelectric membrane, lower surface deposition bottom electrode 7 at piezoelectric membrane, in the upper surface photoetching of silicon substrate 1 and carry out the inductive couple plasma etching and form spout 5, discharge porous silicon and form cavity 2.
In addition, when the lower surface of silicon substrate 1 adopts electrochemical erosion method to prepare porous silicon layer, also can adopt the selectivity ion to inject the mode that forms high resistance area and prepare porous silicon layer.
Claims (1)
1, a kind of preparation method of piezoelectric combining jet device, it is characterized in that may further comprise the steps: at first the upper and lower surface of silicon substrate is polished, adopt Low Pressure Chemical Vapor Deposition deposited silicon nitride layer on silicon substrate then, lower surface photoetching at silicon substrate forms mask, shape and size according to cavity, adopt electrochemical erosion method to prepare porous silicon layer, perhaps adopt the selectivity ion to inject the mode that forms high resistance area and prepare porous silicon layer; Remove silicon substrate lower surface cavity position silicon nitride layer in addition, lower surface at silicon substrate adopts Low Pressure Chemical Vapor Deposition deposition vibrating diaphragm, surface deposition top electrode at vibrating diaphragm, adopt sol-gel method to prepare piezoelectric, lower surface deposition bottom electrode at piezoelectric, in the upper surface photoetching of silicon substrate and carry out the inductive couple plasma etching and form spout, discharge porous silicon and form cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100180451A CN100548504C (en) | 2007-06-14 | 2007-06-14 | The preparation method of piezoelectric combining jet device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100180451A CN100548504C (en) | 2007-06-14 | 2007-06-14 | The preparation method of piezoelectric combining jet device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101066542A CN101066542A (en) | 2007-11-07 |
| CN100548504C true CN100548504C (en) | 2009-10-14 |
Family
ID=38879317
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2007100180451A Expired - Fee Related CN100548504C (en) | 2007-06-14 | 2007-06-14 | The preparation method of piezoelectric combining jet device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100548504C (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2380074B1 (en) * | 2008-12-19 | 2016-11-16 | Koninklijke Philips N.V. | Apparatus and method for providing a user interface to an information processing system |
| CN102451798A (en) * | 2010-10-14 | 2012-05-16 | 研能科技股份有限公司 | Single-hole nozzle device |
| CN102268747B (en) * | 2011-08-01 | 2013-03-27 | 王策 | High-voltage electrostatic electron shuttle nano-spinning device |
| CN102601009A (en) * | 2012-03-21 | 2012-07-25 | 西北工业大学 | Silicon-based miniature side nozzle synthetic jet device and method for manufacturing same |
| CN104894968B (en) * | 2015-06-23 | 2016-06-29 | 东南大学 | A kind of Longspan Bridge bridge tower resisting strong/typhoon |
| CN105872894B (en) * | 2016-03-24 | 2019-03-26 | 中北大学 | A kind of the sound lining and control method of the double working modes inhibited for broadband noise |
| CN106370484A (en) * | 2016-10-13 | 2017-02-01 | 苏州阿洛斯环境发生器有限公司 | Synthetic jet device, portable miniature particulate matter sampling apparatus and trapping method |
| CN107575417A (en) * | 2017-07-24 | 2018-01-12 | 西北工业大学 | A kind of axial flow compressor treated casing device based on synthesizing jet-flow |
| CN107893796A (en) * | 2017-11-21 | 2018-04-10 | 上海理工大学 | A kind of synthesizing jet-flow excitor and Blades For Horizontal Axis Wind |
| US10512150B2 (en) * | 2018-05-03 | 2019-12-17 | GM Global Technology Operations LLC | Systems and apparatuses for high performance atmosphere thin film piezoelectric resonant plasmas to modulate air flows |
-
2007
- 2007-06-14 CN CNB2007100180451A patent/CN100548504C/en not_active Expired - Fee Related
Non-Patent Citations (8)
| Title |
|---|
| 合成射流流动机理及应用技术研究. 罗振兵.中国优秀博硕士学位论文全文数据库（硕士）工程科技Ⅱ辑，第2004年第1期. 2004 |
| 合成射流流动机理及应用技术研究. 罗振兵.中国优秀博硕士学位论文全文数据库（硕士）工程科技Ⅱ辑，第2004年第1期. 2004 * |
| 基于MEMS技术的压电微喷的研制. 许立宁.中国优秀博硕士学位论文全文数据库（博士）信息科技辑，第2006年第4期. 2006 |
| 基于MEMS技术的压电微喷的研制. 许立宁.中国优秀博硕士学位论文全文数据库（博士）信息科技辑，第2006年第4期. 2006 * |
| 基于MEMS技术的自吸微泵的研制. 王海宁.中国优秀博硕士学位论文全文数据库（博士）工程科技Ⅱ辑，第2007年第2期. 2007 |
| 基于MEMS技术的自吸微泵的研制. 王海宁.中国优秀博硕士学位论文全文数据库（博士）工程科技Ⅱ辑，第2007年第2期. 2007 * |
| 微电子机械系统中重要材料-多孔硅的制备和应用的研究. 王兴.中国优秀博硕士学位论文全文数据库（硕士）信息科技辑，第2004年第4期. 2004 |
| 微电子机械系统中重要材料-多孔硅的制备和应用的研究. 王兴.中国优秀博硕士学位论文全文数据库（硕士）信息科技辑，第2004年第4期. 2004 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101066542A (en) | 2007-11-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100548504C (en) | The preparation method of piezoelectric combining jet device | |
| KR101740115B1 (en) | A support structure and method of forming a support structure | |
| EP3233311B1 (en) | Piezoelectric micromachined ultrasonic transducers with low stress sensitivity and methods of fabrication | |
| US7329933B2 (en) | Silicon microphone with softly constrained diaphragm | |
| CN104507014B (en) | A kind of MEMS microphone and its manufacturing method with fold-type vibrating membrane | |
| US9708182B2 (en) | Methods for producing a cavity within a semiconductor substrate | |
| US9159899B2 (en) | Forming a membrane having curved features | |
| CN107005769A (en) | The MEMS with micromechanics piezo-activator of high power and deflection for realizing | |
| US8344466B2 (en) | Process for manufacturing MEMS devices having buried cavities and MEMS device obtained thereby | |
| EP3490018A1 (en) | Micro-electro-mechanic actuator device of piezoelectric type and apparatus integrating the micro-electro-mechanic actuator device | |
| CN109721022B (en) | Piezoelectric MEMS device with suspended membrane and process for manufacturing the same | |
| CN114697841A (en) | MEMS microphone and vibrating diaphragm structure thereof | |
| CN110636421A (en) | MEMS structure and manufacturing method thereof | |
| CN102143906A (en) | MEMS device and method for manufacturing the same | |
| CN110113702B (en) | Manufacturing method of MEMS structure | |
| CN101646115A (en) | Silicon micro piezoelectric microphone based on inn-plane polarization of ferroelectric PZT film and manufacture method thereof | |
| CN209748812U (en) | MEMS structure | |
| CN110113699A (en) | A kind of preparation method of MEMS structure | |
| CN210609696U (en) | MEMS structure | |
| CN209748811U (en) | MEMS structure | |
| CN102601009A (en) | Silicon-based miniature side nozzle synthetic jet device and method for manufacturing same | |
| CN100536608C (en) | Microsilicon microphone and its preparing method | |
| KR20020016117A (en) | The Fabrication Process For Microphone Using The MEMS | |
| CN106315506A (en) | Micromachining technology for manufacturing composite capacitive micromachined ultrasonic transducer | |
| CN205917019U (en) | MEMS devices |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091014 Termination date: 20130614 |