CN100547856C - Has connected structure of elastic conductive projection and preparation method thereof - Google Patents
Has connected structure of elastic conductive projection and preparation method thereof Download PDFInfo
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- CN100547856C CN100547856C CNB2006101631270A CN200610163127A CN100547856C CN 100547856 C CN100547856 C CN 100547856C CN B2006101631270 A CNB2006101631270 A CN B2006101631270A CN 200610163127 A CN200610163127 A CN 200610163127A CN 100547856 C CN100547856 C CN 100547856C
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Abstract
A kind of connected structure, it comprises one first substrate, one second substrate, a non-conductive adhesion layer and a plurality of spherical spacer.First substrate has a plurality of first connection pads.Second substrate is to be disposed at one of first substrate side, and have a plurality of second connection pads and a plurality of elastic conductive projection, these elastic conductive projections are disposed at respectively on second connection pad, wherein second connection pad on second substrate by these elastic conductive projections respectively with first substrate on first connection pad electrically connect.Non-conductive adhesion layer is to be disposed between first substrate and second substrate.A plurality of spherical spacer are to be distributed in the non-conductive adhesion layer, to keep the spacing between first substrate and second substrate.
Description
Technical field
The present invention relates to a kind of connected structure and preparation method thereof, and particularly relates to and a kind ofly use non-conductive adhesion layer as the connected structure of the joint media between substrate and preparation method thereof.
Background technology
Along with the fast development of lcd technology, the LCD of a new generation just develops towards the direction of high brightness, wide viewing angle, fast, the high image resolution of reaction rate and full-colorization.Yet the factor that influences these image characteristics comprises the structure packing technique etc. of technology, alignment films (alignment layer), frame glue (sealant) material and back segment of rerum natura, colored filter, the thin-film transistor of the structure of liquid crystal molecule, pixel electrode (pixel electrode).Because the demand of the high image resolution of LCD and compactization of electronic product, the structure packing technique is also by crystal grain-circuit board joining technique (Chip On Board, COB) change the automatic coating technique of film (Tape Automated Bonding into, TAB), be evolved to again little spacing (fine pitch) now crystal grain-glass bond technology (Chip On Glass, COG).
General common crystal grain-glass bond (COG) technology is as the media that electrically connects between chip for driving (driver IC) and the liquid crystal panel usually with anisotropic conductive film.At first, anisotropic conductive film is disposed on the chip for driving pressing zone of liquid crystal panel, afterwards, utilize heating and pressing mode that chip for driving is pressed on the anisotropic conductive film, make that the projection on the chip for driving can be by conducting particles in the anisotropic conductive film and the connection pad conducting on the liquid crystal panel.Yet, the spacing (pitch) between two adjacent projections very hour, existing conducting particles easily makes the situation that is short-circuited between the projection in the anisotropic conductive film, and then makes and be restricted apart from microminiaturization between crystal grain-glass bond.
For solve above-mentioned in crystal grain-glass bond technology because of using anisotropic conductive film to cause the problem that is short-circuited between projection, just the someone proposes with non-conductive adhesion layer (Non-Conductive Film, NCF) replace above-mentioned anisotropic conductive film, to reach the demand of super-high density joint.Yet, because thermal coefficient of expansion (the Coefficient of Thermal Expansion of non-conductive adhesion layer, CTE) difference with the thermal coefficient of expansion of crystal grain and glass substrate is too big, therefore, after crystal grain-glass bond technology completes, easily produce between crystal grain and glass substrate and peel off the problem of (Micro-delaminate), and in structure, also can have microcrack (Micro-crack) or micropore hole (Micro-void), and then have influence on the reliability of contact.
Fig. 1 illustrates the generalized section into existing a kind of connected structure.Please refer to Fig. 1, this connected structure 100 mainly comprises one first substrate 110 and one second substrate 120, wherein, have a plurality of first connection pads 112 on first substrate 110 and be disposed at projection 114 on first connection pad 112, similarly, have on second substrate 120 a plurality of corresponding to first connection pad 112 second connection pad 122 and be disposed at projection 124 on second connection pad 122.When substrate carried out reflow (reflow) technology, projection 114 can be welded together each other with projection 124, first substrate 110 and second substrate 120 is constituted electrically connect.The technical characterictic of this connected structure 100 is higher metal levels 116,126 of configuration one fusing point in the metal level of projection 114,124 belows, and this metal level 116,126 for example is made up of gold (Au).So, when carrying out reflow process, the metal level 116,126 of not thawing can produce the effect of support.
Fig. 2 A and 2B illustrate the making flow process generalized section into existing a kind of crystal grain-glass bond technology.At first, please refer to Fig. 2 A, a substrate 210 and one of relative with it chip 220 are provided, this glass substrate 210 is provided with several corresponding projections 212,222 with chip 220.In addition, be provided with several spike projections with higher melt (stud bump) 224 in addition on chip 220, this spike projection 224 for example is made up of gold (Au).Please refer to Fig. 2 B, when carrying out reflow process, projection 212 can be welded together each other with projection 222, substrate 210 is constituted with chip 220 to be electrically connected, in addition, in the process that reflow process is carried out, spike projection 224 is suitable for supporting entire chip 220, to keep the spacing between substrate 210 and the chip 220.
Moreover, in No. the 6972490th, United States Patent (USP), disclosed a kind of " connected structure " with composite projection.Please refer to Fig. 3, this connected structure 300 mainly comprise one first substrate 310, one second substrate 320 and be disposed at the two one of non-conductive adhesion layer 330, dispose a composite projection 314 on this first substrate on 310 the metallic pad 312 respectively, electrically connect with metallic pad 322 by this composite projection 314 and second substrate 320.When the characteristics of this connected structure 300 are taper projection 314a in forming composite projection 314, form several blocks (stopper) 316 simultaneously, so, when carrying out crystal grain-glass bond technology, can prevent to cause breaking of composite projection 314 by the setting of block 316, to guarantee the normally of contact because of activating pressure is excessive.
Summary of the invention
The present invention's purpose provides a kind of connected structure, this connected structure is to add a plurality of spherical spacer in order to the non-conductive adhesion layer that engages two substrates, with the difference of the thermal coefficient of expansion of the thermal coefficient of expansion that dwindles non-conductive adhesion layer and substrate, to improve the reliability of contact.
Another object of the present invention provides a kind of manufacture method of connected structure, this manufacture method be between two substrates, form a non-conductive adhesion layer and be distributed in this non-conductive adhesion layer more than a spherical spacer, distance between keeping between two substrates by these spherical spacer, preventing in the pressing process crushing elastic conductive projection because of pressure is excessive, and then improve its bond quality.
For reaching above-mentioned or other purpose, the present invention proposes a kind of connected structure, and this connected structure comprises one first substrate, one second substrate, a non-conductive adhesion layer and a plurality of spherical spacer.First substrate has a plurality of first connection pads.Second substrate is to be disposed at one of first substrate side, and have a plurality of second connection pads and a plurality of elastic conductive projection, these elastic conductive projections are disposed at respectively on second connection pad, wherein second connection pad on second substrate by these elastic conductive projections respectively with first substrate on first connection pad electrically connect.Non-conductive adhesion layer is to be disposed between first substrate and second substrate.A plurality of spherical spacer are to be distributed in the non-conductive adhesion layer, to keep the spacing between first substrate and second substrate.
In one of the present invention embodiment, first substrate comprises a silicon substrate, a glass substrate, a printed circuit board (PCB), a bendable wiring board or a ceramic substrate, and in addition, first substrate also can be organic substrate or other inorganic substrate.
In one of the present invention embodiment, second substrate comprises a silicon substrate, a glass substrate, a printed circuit board (PCB) or a bendable wiring board, and in addition, second substrate also can be organic substrate or other inorganic substrate.
In one of the present invention embodiment, each elastic conductive projection comprises a macromolecular convex and is covered in one of this macromolecular convex periphery conductive metal layer.
In one of the present invention embodiment, each elastic conductive projection is parallel in the section on surface of first substrate, and the length on its narrowest limit is less than the diameter of each sept.
In one of the present invention embodiment, the height of each elastic conductive projection is greater than the diameter of sept.
In one of the present invention embodiment, non-conductive adhesion layer comprises a non-conductive cream or the non-conductive film that sticks together of sticking together.
In one of the present invention embodiment, each spherical spacer is made up of an insulating material.Further, this insulating material comprises an organic material or an inorganic material.
In one of the present invention embodiment, above-mentioned organic material comprises a high molecular polymer.And this high molecular polymer comprises epoxy resin or polyimides.
In one of the present invention embodiment, above-mentioned inorganic material comprises silicon dioxide or titanium dioxide.
For reaching above-mentioned or other purpose, the present invention proposes a kind of manufacture method with connected structure of elastic conductive projection in addition, it comprises the following step: at first, one first substrate and one second substrate are provided, wherein first substrate has a plurality of first connection pads, second substrate is to be positioned at one of first substrate side, and second substrate has a plurality of second connection pad and a plurality of elastic conductive projections that are positioned on second connection pad corresponding to above-mentioned first connection pad; Afterwards, between first and second substrate, form a non-conductive adhesion layer and a plurality of spherical spacer; At last, pressing first substrate, non-conductive adhesion layer and second substrate, make elastic conductive projection on second connection pad of second substrate penetrate this non-conductive adhesion layer and electrically connect with first connection pad of first substrate respectively, wherein these spherical spacer can be distributed in the non-conductive adhesion layer between first substrate and second substrate to keep the spacing between first and second substrate.
In one of the present invention embodiment, the method that forms non-conductive adhesion layer and spherical spacer between first and second substrate comprises: earlier these spherical spacer are scattered in the non-conductive adhesion layer; Afterwards, will be dispersed with spherical spacer more is attached on first substrate and covers above-mentioned first connection pad in wherein non-conductive adhesion layer.
In one of the present invention embodiment, the method that forms non-conductive adhesion layer and spherical spacer between first and second substrate comprises: earlier these spherical spacer are scattered in the non-conductive adhesion layer; Come again, be attached on second substrate and cover above-mentioned elastic conductive projection in wherein non-conductive adhesion layer being dispersed with spherical spacer.
In one of the present invention embodiment, comprise in the method that forms non-conductive adhesion layer and spherical spacer between first and second substrate: earlier non-conductive adhesion layer is attached on first substrate, and covers above-mentioned first connection pad; Afterwards, these spherical spacer are interspersed among on the non-conductive adhesion layer.
In one of the present invention embodiment, comprise in the method that forms non-conductive adhesion layer and spherical spacer between first and second substrate: earlier non-conductive adhesion layer is attached on second substrate, and covers above-mentioned elastic conductive projection; Afterwards, these spherical spacer are interspersed among on the non-conductive adhesion layer.
In one of the present invention embodiment, wherein the method for pressing first substrate, non-conductive adhesion layer and second substrate comprises a heating joint technology, a UV-irradiation joint technology, a ultrasonic waves joint technology or the combination of above-mentioned joint technology.
In one of the present invention embodiment, wherein each elastic conductive projection is parallel in the section on surface of first substrate, and the length on its narrowest limit is the diameter less than each spherical spacer.
In one of the present invention embodiment, each elastic conductive projection highly be diameter greater than each sept.
The present invention adds a plurality of spherical spacer in the non-conductive adhesion layer of connected structure, make the thermal coefficient of expansion of non-conductive adhesion layer integral body approach the thermal coefficient of expansion of substrate, so, can improve and use the structure that non-conductive adhesion layer brought to peel off, produce problems such as microcrack or micropore hole in the prior art merely, to improve the quality of connected structure.
In addition, in in order to the non-conductive adhesion layer that engages two substrates, add a plurality of spherical spacer, distance between can keeping between two substrates by spherical spacer to prevent two substrates when carrying out joint technology, makes elastic conductive projection produce defective (crack) because of activating pressure is excessive.
Moreover, when the geometry external form of design flexibility conductive projection, be diameter especially with the Design of length on the narrowest limit in its section less than spherical spacer, so, when two substrates carry out process for pressing, can spherical spacer be arranged by the narrowest limit of elastic conductive projection, all can conducting to guarantee all contacts.
State with other purpose, feature and advantage and can become apparent on the present invention for allowing, preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below.
Description of drawings
Fig. 1 illustrates the generalized section into existing a kind of connected structure.
Fig. 2 A and 2B illustrate the making flow process generalized section into existing a kind of connected structure.
Fig. 3 illustrates a kind of generalized section with connected structure of composite projection that is disclosed for No. 6972490 by according to United States Patent (USP).
Fig. 4 A～4C illustrates the making flow process generalized section of manufacture method that has the connected structure of elastic conductive projection for the embodiment one of according to the present invention a kind of.
Fig. 5 A illustrates the schematic perspective view into the elastic conductive projection shown in Fig. 4 A.
Fig. 5 B～5E illustrates the schematic perspective view that is respectively the elastic conductive projection with other kenel.
Fig. 6 illustrates to form the generalized section of wherein a kind of method of non-conductive adhesion layer and spherical spacer between first substrate and second substrate.
The main element symbol description
100: connected structure
110: the first substrates
112: the first connection pads
114: projection
116: metal level
120: the second substrates
122: the second connection pads
124: projection
126: metal level
210: substrate
212: projection
220: chip
222: projection
224: the spike projection
300: connected structure
310: the first substrates
312: metallic pad
314: composite projection
314a: taper projection
316: block
320: the second substrates
330: non-conductive adhesion layer
400: connected structure
410: the first substrates
412: the first connection pads
420: the second substrates
422: the second connection pads
424,424 ', 424 ", 424 " ', 424 " ": elastic conductive projection
424a: macromolecular convex
424b: conductive metal layer
426: protective layer
430: non-conductive adhesion layer
440: spherical spacer
Embodiment
Fig. 4 A～4C illustrates the making flow process generalized section of manufacture method that has the connected structure of elastic conductive projection for the embodiment one of according to the present invention a kind of.At first, please refer to Fig. 4 A, one first substrate 410 and one second substrate 420 are provided, wherein, this first substrate 410 has a plurality of first connection pads 412, second substrate 420 is to be positioned on first substrate 410, and second substrate 420 has a plurality of second connection pad 422 and a plurality of elastic conductive projections 424 that are positioned on second connection pad 422 corresponding to above-mentioned first connection pad 412.
In this embodiment, be with crystal grain-glass bond technology be example to explain, therefore, first substrate 410 is a glass substrate, and second substrate 420 is a crystal grain.Yet, first substrate 410 also can be a silicon substrate, a printed circuit board (PCB), a bendable wiring board or a ceramic substrate, and second substrate 420 also can be a silicon substrate, a glass substrate, a printed circuit board (PCB) or a bendable wiring board, in addition, first substrate 410 and second substrate 420 also can be organic substrate or other inorganic substrate, and the present invention does not impose any restrictions for the form of first substrate 410 and second substrate 420.In addition, being positioned at the conductive metal layer 424b that elastic conductive projection 424 on second connection pad 422 of second substrate 420 has the macromolecular convex 424a of elasticity by one and be covered in this macromolecular convex 424a periphery is formed.Moreover, on second substrate 420, be provided with a protective layer (passivation layer) 426 usually, this protective layer 426 can expose the second above-mentioned connection pad 422, but and the circuit in the protective substrate avoid being undermined and make moist.
In this embodiment, above-mentioned elastic conductive projection 424 is for just like the bullet with rectangular cross-section shown in Fig. 5 A, and its top surface S is elastic conductive projection 424 part that contacts with first connection pad 412.Fig. 5 B～5E illustrates the schematic perspective view that is respectively the elastic conductive projection with other kenel.Please refer to Fig. 5 B, this elastic conductive projection 424 ' is one to have the bullet of circular cross section; Please refer to Fig. 5 C, this elastic conductive projection 424 " for having the column of cross section; Please refer to Fig. 5 D, elastic conductive projection 424 " ' for having the column of diesis type profile; Please refer to Fig. 5 E, this elastic conductive projection 424 " " for having the column of U type profile.Except the elastic conductive projection 424 of above several different kenels of enumerating, this elastic conductive projection 424 also can have other different shape, and the present invention does not impose any restrictions for the geometry external form of elastic conductive projection 424.
Next, please continue 4B, between first substrate 410 and second substrate 420, form a non-conductive adhesion layer 430 and an a plurality of spherical spacer 440 with reference to figure.In this embodiment, be earlier these spherical spacer 440 to be scattered in the non-conductive adhesion layer 430, afterwards, will be dispersed with spherical spacer 440 more and be attached on first substrate 410, and cover first connection pad 412 on first substrate 410 in wherein non-conductive adhesion layer 430.In this embodiment, non-conductive adhesion layer 430 can by one non-conductive stick together cream (Non-Conductive Paste, NCP) or one non-conductively stick together film (Non-Conductive Film NCF) forms.In addition, the spherical spacer 440 that is distributed in the non-conductive adhesion layer 430 needs to be made up of insulating material, and to prevent 420 situations that unusual conducting takes place of first substrate 410 and second substrate, this insulating material can be an organic material or an inorganic material.Further, this organic material can be a high molecular polymer, and for example: epoxy resin or polyimides, inorganic material then can be silicon dioxide or titanium dioxide.
In addition, follow-up when first substrate 410 engages with second substrate 420 for preventing, may be stuck in just between first connection pad 412 of the elastic conductive projection 424 of second substrate 420 and first substrate 410 because of spherical spacer 440, and cause the situation that first substrate 410 and second substrate 420 can't normally, in this embodiment, be that each elastic conductive projection 424 is parallel in the section on surface of first substrate 410, the Design of length on its narrowest limit is the diameter less than each spherical spacer 440.So, when follow-up during at pressing first substrate 410 and second substrate 420, can spherical spacer 440 be arranged by the narrowest limit in the elastic conductive projection 424, take place with the situation of avoiding spherical spacer 440 to be stuck between the elastic conductive projection 424 and first connection pad 412.Moreover the highly also need of elastic conductive projection 424 are greater than the diameter of spherical spacer 440, and after avoiding first substrate 410 and 420 pressings of second substrate, the situation that elastic conductive projection 424 can't contact with first connection pad 412 produces.
At last, please refer to Fig. 4 C, pressing first substrate 410, non-conductive adhesion layer 430 and second substrate 420, make elastic conductive projection 424 on second connection pad 422 of second substrate 420 penetrate this non-conductive adhesion layer 430 and electrically connect with first connection pad 412 of first substrate 410 respectively, so, promptly finish the making flow process of the present invention's connected structure 400.In this connected structure 400, these spherical spacer 440 can be distributed in the non-conductive adhesion layer 430, to keep the spacing between first substrate 410 and second substrate 420, so, can prevent first substrate 410 and second substrate 420 when engaging, produce defectives because of engaging the excessive elastic conductive projection 430 that makes of strength.Further, the method for pressing first substrate 410, non-conductive adhesion layer 430 and second substrate 420 comprises: heating joint technology, UV-irradiation joint technology, ultrasonic waves joint technology or the combination of above-mentioned joint technology.
Be set forth in the step that forms non-conductive adhesion layer 430 and a plurality of spherical spacer 440 between first substrate 410 and second substrate 420 last, shown in can image pattern 4B, to be dispersed with spherical spacer 440 earlier and be attached on first substrate 410 and cover outside first connection pad 412 in wherein non-conductive adhesion layer 430, it also can utilize following several different modes to finish.
Fig. 6 illustrates to form the generalized section of wherein a kind of method of non-conductive adhesion layer and spherical spacer between first substrate and second substrate.Please refer to Fig. 6, the method is earlier these spherical spacer 440 to be scattered in the non-conductive adhesion layer 430 equally, afterwards, to be dispersed with spherical spacer 440 more is attached on second substrate 420 in wherein non-conductive adhesion layer 430, and cover above-mentioned elastic conductive projection 424, at last, carry out the step of the substrate pressing shown in Fig. 4 C again, can form the connected structure 400 shown in Fig. 4 C equally.
In addition, also can earlier non-conductive adhesion layer 430 be attached on first substrate 410, and cover first connection pad 412, afterwards, again spherical spacer 430 be interspersed among on the non-conductive adhesion layer 430.Or earlier non-conductive adhesion layer 430 is attached on second substrate 420, and cover elastic conductive projection 424, afterwards, again spherical spacer 430 is interspersed among on the non-conductive adhesion layer 430.Above-mentioned these several different modes all can reach the purpose that forms non-conductive adhesion layer 430 and spherical spacer 440 between first substrate 410 and second substrate 420.
In sum, connected structure that the present invention disclosed and preparation method thereof has following advantage:
(1) the present invention adds a plurality of spherical spacer in the non-conductive adhesion layer of connected structure, after having added spherical spacer in the non-conductive adhesion layer, the thermal coefficient of expansion of non-conductive adhesion layer integral body can approach the thermal coefficient of expansion of substrate, so, can improve and use the structure that non-conductive adhesion layer brought to peel off in the prior art merely, or in structure, produce problems such as microcrack or micropore hole, make its advantage that has anisotropic conductive film and non-conductive adhesion layer concurrently, to improve the quality of this connected structure.
(2) distance between this connected structure can be kept between two substrates by spherical spacer so, can prevent two substrates when carrying out joint technology, makes elastic conductive projection produce defective because of activating pressure is excessive.
(3) when the design flexibility conductive projection, the present invention is the diameter less than spherical spacer especially with the Design of length on the narrowest limit in its section, so, when two substrates carry out process for pressing, can spherical spacer be arranged by the narrowest limit of elastic conductive projection, guaranteeing that all contacts all can conducting, and then improve the reliability of this connected structure.
(4) in non-conductive adhesion layer, add the thermal diffusivity raising that a plurality of spherical spacer can also make non-conductive adhesion layer integral body, therefore the simple connected structure of non-conductive adhesion layer that uses of tradition is low can to make the temperature of this kind connected structure when running, thereby can improve current efficiency.
(5) in non-conductive adhesion layer, add the dielectric constant reduction that a plurality of spherical spacer can also make non-conductive adhesion layer integral body, so this kind connected structure can be applied in the high frequency assembly.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; have in the technical field under any and know the knowledgeable usually; without departing from the spirit and scope of the invention; when can doing a little change and retouching, so the present invention's protection range attached claim person of defining after looking is as the criterion.
Claims (20)
1. connected structure comprises:
First substrate has a plurality of first connection pads;
Second substrate, be disposed at a side of this first substrate, and have a plurality of second connection pads and a plurality of elastic conductive projection, those elastic conductive projections are disposed at respectively on those second connection pads, and wherein those second connection pads of this second substrate electrically connect with those first connection pads of this first substrate respectively by those elastic conductive projections;
Non-conductive adhesion layer is disposed between this first substrate and this second substrate; And
A plurality of spherical spacer are distributed in this non-conductive adhesion layer, to keep the spacing between this first substrate and this second substrate.
2. connected structure as claimed in claim 1, wherein this first substrate comprises printed circuit board (PCB), bendable wiring board, organic substrate or inorganic substrate.
3. connected structure as claimed in claim 1, wherein this second substrate comprises printed circuit board (PCB), bendable wiring board, organic substrate or inorganic substrate.
4. connected structure as claimed in claim 1, wherein respectively this elastic conductive projection comprises macromolecular convex and is covered in a conductive metal layer of this macromolecular convex periphery.
5. connected structure as claimed in claim 1, wherein respectively this elastic conductive projection is parallel in the section on surface of this first substrate, its length on narrow limit less than the diameter of this spherical spacer respectively.
6. connected structure as claimed in claim 1, wherein respectively the height of this elastic conductive projection greater than the diameter of this spherical spacer respectively.
7. connected structure as claimed in claim 1, wherein this non-conductive adhesion layer comprises non-conductive cream or the non-conductive film that sticks together of sticking together.
8. connected structure as claimed in claim 1, wherein respectively this spherical spacer is made up of insulating material.
9. connected structure as claimed in claim 8, wherein this insulating material comprises organic material or inorganic material.
10. connected structure as claimed in claim 9, wherein this organic material comprises high molecular polymer.
11. connected structure as claimed in claim 10, wherein this high molecular polymer comprises epoxy resin or polyimides.
12. connected structure as claimed in claim 9, wherein this inorganic material comprises silicon dioxide or titanium dioxide.
13. the manufacture method with connected structure of elastic conductive projection comprises:
First substrate and second substrate are provided, wherein this first substrate has a plurality of first connection pads, this second substrate is positioned at a side of this first substrate, and this second substrate has a plurality of second connection pad and a plurality of elastic conductive projections that are positioned on this second connection pad corresponding to those first connection pads;
This first and this second substrate between form non-conductive adhesion layer and a plurality of spherical spacer; And
This first substrate of pressing, this non-conductive adhesion layer and this second substrate, make those elastic conductive projections on those second connection pads of this second substrate penetrate this non-conductive adhesion layer and electrically connect with those first connection pads of this first substrate respectively, wherein those spherical spacer can be distributed in this non-conductive adhesion layer between this first substrate and this second substrate to keep the spacing between this first and second substrate.
14. the manufacture method with connected structure of elastic conductive projection as claimed in claim 13, wherein this first and this second substrate between form this non-conductive adhesion layer and those spherical spacer method comprise:
Earlier those spherical spacer are scattered in this non-conductive adhesion layer; And
Be attached on this first substrate and cover those first connection pads in wherein this non-conductive adhesion layer being dispersed with those spherical spacer.
15. the manufacture method with connected structure of elastic conductive projection as claimed in claim 13, wherein this first and this second substrate between form this non-conductive adhesion layer and those spherical spacer method comprise:
Earlier those spherical spacer are scattered in this non-conductive adhesion layer; And
Be attached on this second substrate and cover those elastic conductive projections in wherein this non-conductive adhesion layer being dispersed with those spherical spacer.
16. the manufacture method with connected structure of elastic conductive projection as claimed in claim 13, wherein this first and this second substrate between form this non-conductive adhesion layer and those spherical spacer method comprise:
Should be attached on this first substrate by non-conductive adhesion layer, and cover those first connection pads; And
Those spherical spacer are interspersed among on this non-conductive adhesion layer.
17. the manufacture method with connected structure of elastic conductive projection as claimed in claim 13, wherein this first and this second substrate between form this non-conductive adhesion layer and those spherical spacer method comprise:
Should be attached on this second substrate by non-conductive adhesion layer, and cover those elastic conductive projections; And
Those spherical spacer are interspersed among on this non-conductive adhesion layer.
18. the manufacture method with connected structure of elastic conductive projection as claimed in claim 13, wherein the method for this first substrate of pressing, this non-conductive adhesion layer and this second substrate comprises heating joint technology, UV-irradiation joint technology, ultrasonic waves joint technology or the combination of above-mentioned joint technology.
19. the manufacture method with connected structure of elastic conductive projection as claimed in claim 13, wherein respectively this elastic conductive projection is parallel in the section on surface of this first substrate, its length on narrow limit less than the diameter of this spherical spacer respectively.
20. the manufacture method with connected structure of elastic conductive projection as claimed in claim 13, wherein respectively the height of this elastic conductive projection greater than the diameter of this spherical spacer respectively.
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Effective date of registration: 20170809 Address after: Hsinchu County, Taiwan, China Co-patentee after: Chunghwa Picture Tubes, Ltd. Patentee after: Taiwan TFT LCD Association Co-patentee after: AU OPTRONICS Corp. Co-patentee after: HANNSTAR DISPLAY Corp. Co-patentee after: INNOLUX DISPLAY CORP. Co-patentee after: Industrial Technology Research Institute Address before: Hsinchu County, Taiwan, China Co-patentee before: Chunghwa Picture Tubes, Ltd. Patentee before: Taiwan TFT LCD Association Co-patentee before: AU OPTRONICS Corp. Co-patentee before: HANNSTAR DISPLAY Corp. Co-patentee before: CHI MEI OPTOELECTRONICS CORP. Co-patentee before: Industrial Technology Research Institute Effective date of registration: 20170809 Address after: Hsinchu County, Taiwan, China Co-patentee after: Chunghwa Picture Tubes, Ltd. Patentee after: Taiwan TFT LCD Association Co-patentee after: AU OPTRONICS Corp. Co-patentee after: HANNSTAR DISPLAY Corp. Co-patentee after: CHI MEI OPTOELECTRONICS CORP. Co-patentee after: Industrial Technology Research Institute Address before: Hsinchu County, Taiwan, China Co-patentee before: Chunghwa Picture Tubes, Ltd. Patentee before: Taiwan TFT LCD Association Co-patentee before: AU OPTRONICS Corp. Co-patentee before: HANNSTAR DISPLAY Corp. Co-patentee before: CHI MEI OPTOELECTRONICS CORP. Co-patentee before: Industrial Technology Research Institute Co-patentee before: TOPPOLY OPTOELECTRONICS Corp. |
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Effective date of registration: 20180425 Address after: Hsinchu City, Taiwan, China Patentee after: AU OPTRONICS Corp. Address before: Hsinchu County, Taiwan, China Co-patentee before: Chunghwa Picture Tubes, Ltd. Patentee before: Taiwan TFT LCD Association Co-patentee before: AU OPTRONICS Corp. Co-patentee before: HANNSTAR DISPLAY Corp. Co-patentee before: INNOLUX DISPLAY CORP. Co-patentee before: Industrial Technology Research Institute |
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