CN100545298C - The preparation method of matrix material - Google Patents

The preparation method of matrix material Download PDF

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Publication number
CN100545298C
CN100545298C CNB2004800133084A CN200480013308A CN100545298C CN 100545298 C CN100545298 C CN 100545298C CN B2004800133084 A CNB2004800133084 A CN B2004800133084A CN 200480013308 A CN200480013308 A CN 200480013308A CN 100545298 C CN100545298 C CN 100545298C
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China
Prior art keywords
layer
vapor deposition
base material
compound
deposition step
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CN1791700A (en
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沙哈比·雅罗米
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DSM IP Assets BV
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DSM IP Assets BV
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/081—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/20—Metallic material, boron or silicon on organic substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/548—Controlling the composition

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Laminated Bodies (AREA)
  • Physical Vapour Deposition (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

The present invention relates to prepare the method for the matrix material that comprises base material, the first layer and the second layer, comprise: first vapor deposition step, wherein first compound by vapour deposition on base material, thereby formation the first layer, with second vapor deposition step, second compound that wherein comprises triaizine compounds by vapour deposition on the first layer, thereby form the second layer, first and second vapor deposition step are to carry out in the mode that the first layer comprises the triaizine compounds between 0wt.% and the 10wt.%.

Description

The preparation method of matrix material
The present invention relates to prepare the method for matrix material.The invention still further relates to the equipment that carries out described method.
From WO 99/66097 a kind of preparation method of matrix material as can be known.In the method for WO 99/66097, layer of vapour deposition on base material; The vapour deposition compound comprises triazine (triazine) compound.
The method that the purpose of this invention is to provide improvement prepares the matrix material with additional character, improved properties (for example barrier property) or its combination by this method.
Comprise that by preparation the method for the matrix material of base material, the first layer and the second layer reaches described purpose, this method comprises
■ first vapor deposition step, wherein first compound by vapour deposition on base material, thereby form the first layer and
■ second vapor deposition step, second compound that wherein comprises triaizine compounds by vapour deposition on the first layer, thereby form the second layer,
Wherein first and second vapor deposition step are to carry out so that the first layer comprises the mode of the triaizine compounds between 0wt.% and the 10wt.%.
The advantage of the method according to this invention is, first vapor deposition step allows on the base material in conjunction with any feasible required character, simultaneously second vapor deposition step and make the mode of carrying out that has the triaizine compounds between 0wt.% and the 10wt.% in the first layer give the base material barrier property and do not damage the function of the first layer.
In the method according to the invention, prepared the matrix material that comprises base material, the first layer and the second layer.Base material is the material as the carrier of layer; It is a layer deposition object thereon.Base material can be made up of heterogeneous materials basically, and perhaps itself can be heterogeneous or matrix material.Base material can comprise various layers.Base material can be smooth basically, and perhaps it can have complicated 3D shape.The example of suitable substrates is flexible packages (for example film), instrument, rigid package material (for example bottle) or preliminary shaping packing box.
Preferably, base material comprises polymeric material, paper, fiber board, metal or pottery.If base material itself does not fully adhere to the compound that the first layer comprises, then may need before vapor deposition step, base material to be carried out pre-treatment.Pretreated example like this is corona treatment and Cement Composite Treated by Plasma.
The method according to this invention comprises first vapor deposition step.This step can be undertaken by means known in the art.Preferably, first vapor deposition step under reduced pressure (promptly is lower than under the barometric point) and carries out.More preferably, the pressure that carries out first vapor deposition step is lower than 1000Pa or is lower than 1Pa, perhaps even be lower than 0.5Pa, and more preferably between 0.001Pa and 0.01Pa.
Have thermograde during first vapor deposition step: first compound must be heated to the temperature that makes its evaporation, and base material must have enough low temperature so that steam can deposit thereon when being in contact with it.All these envrionment conditionss all well known to a person skilled in the art.
During first vapor deposition step, first compound is evaporated; Steam contacts with base material subsequently and deposits thereon.Here and after this used term " compound " be meant the mixture of pure substance or two or more materials.First compound can be any suitable compound that satisfies desired use; These compounds and desired use thereof are known in this area.The example that is suitable as the preferred substrates of first compound is: metal is aluminium for example; Metal oxide is aluminum oxide (AlO for example X), metal oxide may deposit after the oxidation of metal forms; Other oxide compound is silicon oxide (SiO for example X).Organic compound also can be used as first compound; In a preferred implementation, first compound does not comprise triaizine compounds.
First compound deposition back forms the first layer.The thickness of the first layer depends on its desired use, thereby can change in wide scope.Preferably, the thickness of the first layer is more preferably less than 10 μ m less than 100 μ m, even is more preferably less than 1 μ m; Minimum thickness is 2nm at least preferably, more preferably 10nm at least.If first compound does not present the enough sticking power to base material, then may need before vapor deposition step, base material to be carried out pre-treatment.Pretreated example like this is corona treatment and Cement Composite Treated by Plasma.
After first vapor deposition step, the method according to this invention comprises second vapor deposition step.This second vapor deposition step is according to being undertaken by identical principle with first vapor deposition step.Therefore, second compound is evaporated; Steam is transferred and is deposited on the first layer then, thereby forms the second layer.First and second vapor deposition step can be used as a continuation method carries out, and perhaps they can be used as two continuation methods of separating or discontinuous method and carry out.
Second compound comprises triaizine compounds, preferred 1,3, the 5-triazine, to be a lot of 1,3,5-triazines presented some favourable character for example gas-barrier character, nontoxicity, scrath resistance and form the possibility of transparent layer under specific thicknesses in according to application of the present invention at it to reason.In the method according to the invention can as the example of triaizine compounds be melamine (melamine), melem (melem), melam (melam), cyanurodiamide (ammeline), cyanuramide (ammelide), tricyanic acid (cyanuric acid), 2-urea groups melamine, melamine salt for example melamine cyanurate, have for example functionalized melamine of acrylate, epoxy, Vinyl Ether of polymerizable groups.Second compound can comprise the mixture of triaizine compounds, can also comprise that additional compound for example is intended to be used for the compound of subsequent chemical reaction (for example functionalized, ester moulding, polymerization or crosslinked).
When vapour deposition, chemical reaction does not take place in triaizine compounds usually; It is non-resin, crystallized form, usually is not a monocrystalline form but crystal grain form by boundary separation.Such crystal grain is the known general crystallinity compound of those skilled in the art.Have surprisingly been found that the barrier property of being given matrix material of the present invention by second compound also depends on the size that deposits crystal grain except that other factors, particularly contain the size of the crystal grain of triazine.Grain-size is defined herein as the overall dimension that intragranular is parallel to substrate surface (promptly from top view).When definite key property (for example barrier property), contain in the second layer triazine crystal grain mean sizes may with the thickness no less important of the second layer, perhaps even even more important.Be not subject to any specific theoretical explanation,, can reach optimal barrier properties by the quantity on the intercrystalline border of careful adjustment and the thickness of size rather than settled layer (this expection with the technician is opposite).It is believed that, intercrystalline border give matrix material aspect barrier property relatively a little less than; Therefore, too little if average grain size becomes, thus then there is negative impact on the border to barrier property too much.On the other hand, too big if average grain size becomes, then borderline region itself becomes out-of-proportion big, thereby also makes barrier property impaired.Average grain size is 10nm at least preferably, more preferably 50nm at least, even more preferably 100nm at least, most preferably 200nm at least.Average grain size is 2000nm at the most preferably, more preferably 1000nm at the most, even more preferably 600nm at the most, most preferably 400nm at the most.The mean sizes here is that index amount is average.In a preferred implementation, second compound is gone up substantially by triaizine compounds and is formed thereby the triazine crystalline structure there is no obvious interruption.
The mean sizes of vapour deposition crystal grain also depends on the quantity of grain growing lip-deep nucleation site thereon except that other factors: nucleation site quantity is many more, and average grain size is then more little.Therefore can be by adjusting the mean sizes that the processing condition that influence the nucleation site of grain growing quantity in second vapor deposition step change deposition crystal grain.Find that according to the present invention the quantity of nucleation site increases along with the increase of the difference (promptly containing the heated temperature of second compound of triazine and the difference of the first layer temperature) of depositing temperature.Find that equally if the pressure that second vapor deposition step is carried out raises, then the quantity of nucleation site reduces.In addition, the character that should be noted that the first layer also influences formed nucleation site quantity.Therefore, under the instruction that those skilled in the art can be given, come to determine the optimum process condition of second vapor deposition step by experiment here, thereby obtain at the above average grain size of giving in the scope about temperature contrast and pressure.
Demonstrated required character (for example gas-barrier character) although contain the second layer of non-resin crystallized form triaizine compounds, the subsequent step that makes triaizine compounds generation physics or chemical transformation still is favourable.The example of such subsequent step is cross-linking step and Cement Composite Treated by Plasma, corona treatment, UV treatment or electron beam treatment.In cross-linking step, triaizine compounds and self or the reaction of another kind of compound, described another kind of compound can be in contact with it in the second layer or after the second layer forms by common vapour deposition.The example of another kind of compound like this is a gaseous formaldehyde.In order to strengthen some special properties (for example scratch resistance or wet fastness), it may be favourable carrying out described subsequent step.
As the situation of the first layer, the thickness of the second layer can depend on its desired use and change in wide scope.Preferably, the thickness of the second layer is less than 100 μ m, be more preferably less than 10 μ m or even less than 1 μ m; Minimum thickness is 2nm at least preferably, more preferably 10nm at least.
During carrying out first and second vapor deposition step, guarantee that the major part that triaizine compounds does not form the first layer is important, although depend on the character of first compound and the desired characteristic of matrix material, a small amount of existence of triaizine compounds may provide beneficial effect in the first layer.For example,, then can cause the steam of first compound steam and second compound to be mixed with each other, have a large amount of triaizine compounds in the first layer thereby make if first and second vapor deposition step are carried out after each other immediately.The most example that another triaizine compounds becomes the first layer is that the first layer is also uncured when the vapour deposition of the second layer is finished.The first layer should not comprise the triaizine compounds greater than 10wt.%; Preferably, the triaizine compounds that the first layer comprises is less than 5wt.%, is more preferably less than 3wt.% or even less than 1wt.%.In a preferred implementation, the first layer is substantially free of any triaizine compounds.For guaranteeing that the first layer does not comprise the triazine required technique means contained above second compound of 10wt.% and depends on the concrete mode that first and second vapor deposition step are carried out.So the example of means is: between the steam of the steam of first compound and second compound physical barrier device (barrier) is set and for example shields; Between two vapour sources, reserve enough distances, wherein can observe 50cm, 100cm, 500cm or preferred 1000cm or even the distance of 3000cm; In indoor first and second vapor deposition step of carrying out of separating, therefore under the quantity-produced situation, openings of sizes only enough allows the base material of base material or belt or layer pass through respectively.Under latter event, preferably two chambers are placed on one bigger indoor, thereby the condition that can the control total system condition of pressure correlation particularly.
Pressure in first and second vapor deposition step can equate basically.Yet in an embodiment of the method according to this invention, the pressure of second vapor deposition step is compared high at least or low 0.0005Pa with the pressure of first vapor deposition step.This is favourable, can change with compound is different because carry out the optimum pressure of vapor deposition step, thereby each vapor deposition step can be carried out under the pressure to specific compound the best in this embodiment.Another advantage is that the difference of pressure allows to consider the preceding or the characteristic of follow-up operation.The example of such operation is the coiling of film when base material is continuous film; Known difficulty or ease of carrying out such coiling step depend on pressure.In addition, if at least one vapor deposition step is under reduced pressure carried out, then needn't make two vapor deposition step is to carry out under the maximum vacuum at minimal pressure all, so only there is one of them vapor deposition step need reach the strict technique means of maximum vacuum.Preferably, the pressure of pressure ratio first vapor deposition step of second vapor deposition step high or low 0.005Pa or 0.01Pa at least, more preferably 0.1Pa at least, perhaps even at least 1Pa.Usually, the pressure gap between first and second vapor deposition step preferably is not more than 100000Pa, preferred 10000Pa, more preferably 1000Pa.In another embodiment of the pressure condition of selecting first and second vapor deposition step, the pressure gap of these two steps is at least 5 times, preferred 10 times, and more preferably 25 times.
In an embodiment of the invention, select first compound so that the first layer provides gas or fluid barrier.The example that the suitable substrate of such iris action is provided is metal and/or metal oxide for example aluminium or its oxide compound.In this way, the common iris action of the first layer and the second layer provides the enhancing security of the barrier property of matrix material, particularly under the situation that scratch or other damage take place, so the second layer also can be used as protective layer.
In a preferred implementation of the method according to this invention, described method is carried out being lower than under the pressure of 1000Pa; Preferably, pressure is 10Pa or lower, more preferably 1 * 10 -1Pa or lower, more preferably 4 * 10 -3Pa or lower, even more preferably 5 * 10 -4Pa or lower, most preferably 1 * 10 -4Pa or lower or even 5 * 10 -5Pa or lower.Preferably, second vapor deposition step is carried out after first vapor deposition step immediately or in the near future, promptly in 5 minutes or shorter time, perhaps 1 minute or shorter, perhaps 45 seconds or shorter, perhaps even 30 seconds or shorter, particularly 20 or 10 seconds or shorter, particularly 5 seconds or shorter or even 2 seconds or shorter.Guarantee that the method that two vapor deposition step are carried out at short notice is by continuous or half-continuous process, by in a vacuum chamber or two adjacent vacuum chambers, carrying out two steps, and by currently known methods for example travelling belt or system or when base material is film, carry base material with roll.During first vapor deposition step, base material contacts with first cooling surface, and described first cooling surface has temperature T 1If base material is the form of film, then first cooling surface normally the temperature control roll also be referred to as to apply reel (coating drum).Usually, by making base material do not contacted controlled temperature with cooling or heating surface (for example temperature control roll when base material is film or coating reel) by the part of vapour deposition." film " in the context of the invention is meant smooth basically base material, and its thickness is 2000 μ m at the most, preferred 1000 μ m at the most, particularly 800 μ m at the most, most preferably 500 μ m at the most.In fact, thickness also is very common in the scope of 10 μ m to 50 μ m.
During first vapor deposition step, the temperature of base material changes under the influence of first cooling surface.The temperature of base material also is deposited on the Temperature Influence of first compound on the base material.Depend on the character of first compound, this influence may be significant.For example, metal (as aluminium) fully evaporation under the temperature more than 1000 ℃ usually.As the result who contacts with first cooling surface and the first compound heat energy exists, after first vapor deposition step was finished, the base material of band the first layer obtained a medial temperature.Subsequently, the base material of band the first layer enters second vapor deposition step.The medial temperature of the base material of the band the first layer of this moment is defined herein as temperature T S1During second vapor deposition step, the base material of band the first layer contacts with second cooling surface, and described second cooling surface has temperature T 2In this embodiment according to the present invention, should select T 2So that T S1With T 2Between difference less than 50 ℃.Have surprisingly been found that, during second vapor deposition step, work as T S1With T 2Between difference when reducing, the sticking power between the second layer and the first layer increases.Therefore, be to obtain to have improved properties according to the advantage of this embodiment of the present invention particularly about the matrix material of the sticking power between the first layer and the second layer.Preferably, select T 2So that T S1With T 2Between difference less than 30 ℃ or 20 ℃, particularly less than 10 ℃ or even 5 ℃.
As from the foregoing, T 1The level that is provided with can be to T S1Exert an influence and it will be apparent to those skilled in the art that; Particularly consider the preferred short period interval between first and second vapor deposition step, and consider that vapor deposition step under reduced pressure makes the base material of band the first layer and the thermal exchange of ambient atmosphere die-off.Therefore, T 1The level that is provided with also influenced T 2The terminal level that must be provided with: under the identical condition of all other envrionment conditionss, T 1Reduce can cause base material during first vapor deposition step, to obtain stronger cooling, so T S1Thereby also reduce on lower temperature levels T 2Be provided with between the operational zone.Preferably, select T 1So that T 2Between-20 ℃ and+75 ℃ between, more preferably-10 ℃ and+60 ℃ between, particularly 0 ℃ and+50 ℃ between.This advantage that has is: can handle with the method according to this invention and can not stand very high or the base material of low temperature very, for example contain the base material of polymeric membrane.
The technician is known, the cooling surface that contacts with base material by for example increase or minimizing and/or can influence a certain fixed T the duration of contact of base material and cooling surface 1Effect to the base material outlet temperature.Preferably, select these or other relevant parameter known to the skilled so that T 1Between-30 ℃ and+30 ℃ between, particularly-15 ℃ and+20 ℃ between, guarantee T simultaneously 2Between-20 ℃ and+75 ℃ between, more preferably-10 ℃ and+60 ℃ between, particularly 0 ℃ and+50 ℃ between.This advantage that has is: in the parameter area that the temperature control measures of taking for the temperature that first cooling surface is set only limits to use always.
Preferably, first compound comprises aluminium, aluminum oxide or silicon oxide, perhaps even basically is made up of aluminium, aluminum oxide or silicon oxide; Preferably, second compound comprises melamine, perhaps even basically is made up of melamine.
In another embodiment of the method according to this invention, has medial temperature T S1The base material of band the first layer during second vapor deposition step with have adjustable temps T 2Second cooling surface contact, present method is to keep T thus S1With T 2Between difference operate less than 30 ℃ mode.Preferably, described T S1With T 2Between difference remain on less than 10 ℃, particularly less than 5 ℃.In embodiment in front, T S1With T 2Between the advantage that reduces of difference be that sticking power between the first layer and the second layer increases.Compare with the embodiment of front, the advantage of this embodiment is to make the vapor deposition step of winning be independent of first vapor deposition step more to become possibility.Therefore, for example, adjust its temperature in the time of can entering second vapor deposition step at the base material of band the first layer.Preferably, adjust T S1So that T 2Between-20 ℃ and+75 ℃ between, more preferably-10 ℃ and+60 ℃ between, particularly 0 ℃ and+50 ℃ between.
After second vapor deposition step had just been finished, the matrix material that makes had medial temperature T CDepend on specific environment, T CCan be more than room temperature.If like this, then preferably after second vapor deposition step, make T at once CReduce to the cooling step of envrionment temperature.This cooling step can be undertaken by techniques known in themselves (for example be exposed to ambient air or be exposed in the controlled temperature air).In this embodiment, make T CThe rate of cooling that reduces per hour should be not more than 10 ℃.This advantage that has is that the thermal stresses that exists in the matrix material can be discharged and can not wait the structure of significantly damaging matrix material itself by forming slight crack.This comprises particularly important under the situation of mineral compound (for example metal) at first compound.Preferably, rate of cooling is per hour 8 ℃ or per hour 5 ℃ or lower; More preferably rate of cooling is per hour 3 ℃ or lower.
In another embodiment of the method according to this invention, before second vapor deposition step or during, base material and the first layer are carried out mechanical load (mechanical loading) step.Mechanical load step herein is interpreted as making owing to the external stress that puts on base material the step of base material generation physical deformation, and deformation is not nonvolatil with regard to base material.The example of mechanical load step is stretching, crooked, curling and distortion.If base material is a film, then the example of mechanical load step is a guiding film on roll.Preferably, base material deformation at least 0.3%, more preferably at least 0.5% or 1%, most preferably at least 3%.For fear of the structural failure of matrix material, base material deformation preferably is not more than 100%, more preferably no more than 50%, most preferably is not more than 25%.During the mechanical load step, base material and the first layer are subjected to mechanical stress, in practice too.As the result of described stress, in the first layer little defective may appear.These defectives can be remedied by second compound, reason be the mechanical load step before second vapor deposition step or during carry out.In this way, according to practical situation matrix material of the present invention is carried out pre-treatment, guarantee that matrix material can remain on special properties (for example gas-barrier character of expecting in first and second compounds), the particularly character of expecting better in the application that stands stress in second compound.
Another embodiment for preparing the method for matrix material according to the present invention is included in and applies the 3rd layer even more multi-layered step on the second layer.If matrix material is required additional character or different character, for example with decorative use or relevant character, electroconductibility and/or the chemical property (for example polarity) of protection, then the 3rd layer or more multi-layered existence are necessary.Being applied on the second layer the 3rd layer or more multi-layered example is: as trilaminar printable layer, as the 4th layer bonding coat with as the sealing ply of layer 5.Can apply the 3rd layer or more multi-layered by any suitable method, for example vapour deposition, coating and lamination.
The equipment that carries out the method according to this invention should satisfy particular requirement, is present in the first layer thereby guarantee to be no more than 10% triaizine compounds.Therefore the present invention also relates to such equipment; This equipment comprises the device of evaporation first compound and second compound, with the device that separates first compound and second compound during vapour deposition.These devices can adopt various forms, also depend on the character of compound except that other factors.The example of described device is: have 50,100 or the space of 1000cm between the device of evaporation first and second compounds at least; Baffling device between the device of evaporation first and second compounds; Carry out the chamber that separates of first and second vapor deposition step.
If carry out the mechanical load step on base material, the equipment that then carries out the method according to this invention should comprise the device of using described mechanical load step.Under base material was smooth basically situation, the example of such device was roll or a series of roll.
Further describe the present invention by following examples and contrast experiment.
Embodiment 1
Selecting thickness is that oriented polypropylene (OPP) film of 12 μ m is as base material.Aluminium as first compound by vapour deposition on the OPP film.First and second vapor deposition step are carried out as the batch technology step.Second compound is by melamine (supplier: DSM) form.The depositing temperature of melamine is 310 ℃.Pressure during second vapor deposition step is 10 -5Pa; The temperature of base material and the first layer is-20 ℃.The thickness of the second layer is 140nm; Average grain size is 60nm.Aluminium lamination comprises 0% melamine.Under the relative humidity 0% (RH), measure the oxygen permeability (OTR) of the matrix material of above-mentioned preparation.OTR represents (cc/m every square metre of every day with cubic centimetre usually 2.day).The OTR value is low more, and then the barrier property to oxygen is good more.OTR according to matrix material of the present invention is determined as 10cc/m 2.day.
The contrast experiment 1
Under 0%RH, measure the OTR of an OPP film, with the condition identical with embodiment 1 handle this OPP film but only thereon the first layer of deposition of aluminum promptly do not carry out second vapor deposition step, the OTR of mensuration is 18cc/m 2.day.The contrast experiment shows, although the aluminium of known vapour deposition can give base material (for example OPP film) excellent barrier property, can further strengthen barrier property surprisingly according to matrix material of the present invention.
The contrast experiment 2
Melamine by vapour deposition on an OPP film.The vapour deposition temperature of melamine is 310 ℃.The OTR of measurement and definite this matrix material is 80cc/m under 0%RH 2.day.This value obviously has been better than the known 1600cc/m of being about 2The OTR of OPP film .day itself.Yet this OTR obviously is worse than the OTR according to matrix material of the present invention of embodiment 1.
The contrast experiment 3
The OTR of the matrix material of preparation is greater than 200cc/m among measurement and the definite contrast experiment 2 under 50%RH 2.day.This result shows, humidity is to being that the barrier property of base material and the matrix material of the direct vapour deposition of melamine on base material has negative impact with the OPP film.
Embodiment 2
The OTR of the matrix material of preparation is 10.2cc/m among measurement and the definite embodiment 1 under 50%RH 2.day.This embodiment shows, selects aluminium also insensitive to the noticeable change of relative humidity as the barrier property according to matrix material of the present invention of second compound as first compound and melamine.

Claims (19)

1. preparation comprises the method for the matrix material of base material, the first layer and the second layer, comprising:
■ first vapor deposition step, wherein first compound by vapour deposition on base material, thereby form the first layer, first compound be metal or metal oxide and
■ second vapor deposition step, second compound that wherein comprises triaizine compounds by vapour deposition on the first layer, thereby form the second layer,
Wherein, before second vapor deposition step, the base material with the first layer is carried out the mechanical load step.
2. method according to claim 1, wherein the mechanical load step comprises stretching and/or crooked.
3. method as claimed in claim 1 or 2, wherein base material deformation at least 0.3% in the mechanical load step.
4. method according to claim 3, base material deformation at least 0.5% in the mechanical load step.
5. method according to claim 4, base material deformation at least 1% in the mechanical load step.
6. method as claimed in claim 1 or 2, wherein base material deformation is not more than 25%.
7. method according to claim 1, wherein first compound comprises aluminium, aluminum oxide or silicon oxide.
8. method according to claim 1, wherein the triaizine compounds in the second layer is a crystal.
9. method according to claim 8, wherein the average grain size of triaizine compounds is between 10nm and 2000nm.
10. method according to claim 1, wherein second compound comprises melamine, melem, melam, cyanurodiamide, cyanuramide, tricyanic acid, 2-urea groups melamine.
11. method according to claim 10, wherein second compound comprises melamine.
12. method according to claim 1, wherein first and second vapor deposition step are carried out being lower than under the pressure of 1000Pa.
13. method according to claim 12, wherein first and second vapor deposition step are being lower than 1 * 10 -1Carry out under the pressure of Pa.
14. method according to claim 12, the wherein high or low 0.005Pa at least of the pressure in pressure ratio first vapor deposition step in second vapor deposition step.
15. method according to claim 1 comprises the step of crosslinked triaizine compounds.
16. method according to claim 1 is included in and applies the 3rd layer and/or other layer on the second layer.
17. method according to claim 16, wherein the 3rd layer is printable layer.
18. method according to claim 16, wherein other layer is bonding coat and sealing ply.
19. method according to claim 16 wherein applies the 3rd layer and other layer by coating and lamination.
CNB2004800133084A 2003-05-15 2004-05-10 The preparation method of matrix material Expired - Fee Related CN100545298C (en)

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Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4826114B2 (en) * 2004-12-24 2011-11-30 凸版印刷株式会社 Gas barrier substrate film having an inorganic oxide vapor deposition layer and a protective layer
CA2655684A1 (en) * 2006-07-07 2008-01-10 Dsm Ip Assets B.V. Flame retardant products
EP1995059A1 (en) 2007-05-24 2008-11-26 DSM IP Assets B.V. Substrates with barrier properties at high humidity
AU2008204589B2 (en) * 2007-01-11 2012-11-01 Dsm Ip Assets B.V. Substrates with barrier properties at high humidity
EP2036716A1 (en) 2007-07-20 2009-03-18 DSMIP Assets B.V. A laminate and composite layer comprising a substrate and a coating, and a process for preparation thereof
KR101024353B1 (en) * 2007-09-11 2011-03-23 (주)휴넷플러스 Organic electroinic device and preparing method of the same
US20110177327A1 (en) * 2008-07-10 2011-07-21 Shahab Jahromi Barrier layers, its uses and a process for preparation thereof
JP6056521B2 (en) 2013-02-06 2017-01-11 東洋紡株式会社 Gas barrier film
JP6225573B2 (en) 2013-02-06 2017-11-08 東洋紡株式会社 Laminated film
JP2018536565A (en) * 2015-12-11 2018-12-13 サビック グローバル テクノロジーズ ベスローテン フェンノートシャップ Additive manufacturing method for improving interlayer adhesion
KR101912033B1 (en) 2017-02-13 2018-10-25 연세대학교 산학협력단 Apparatus and method of the same of sensing temperature based on field-programmable gate array
EP4242255A1 (en) 2022-03-09 2023-09-13 Knowfort Holding B.V. Printable substrates with barrier properties

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2340995A1 (en) * 1976-02-16 1977-09-09 Fuji Photo Film Co Ltd METHOD OF MANUFACTURING A SHEET MATERIAL INCLUDING A METAL LAYER DEPOSITED UNDER VACUUM, AND PROCESS FOR MANUFACTURING A RECORDING MATERIAL
CN1007847B (en) * 1984-12-24 1990-05-02 住友特殊金属株式会社 Process for producing magnets having improved corrosion resistance
JPS63116314A (en) * 1986-11-05 1988-05-20 三菱レイヨン株式会社 Manufacture of conducting high polymer resin material with excellent transparency
US5770301A (en) * 1995-03-14 1998-06-23 Daicel Chemical Industries, Ltd. Barrier composite films and a method for producing the same
JPH1076593A (en) * 1996-09-03 1998-03-24 Daicel Chem Ind Ltd Barrier composite film and its manufacture
NL1009405C2 (en) * 1998-06-15 1999-12-16 Dsm Nv Object comprising a support and a layer located on the support.
DE19917076A1 (en) * 1999-04-15 2000-10-19 Fraunhofer Ges Forschung Production of composites for packaging food and other products involves laminating sheet materials together with interlayer formed by vapor deposition of organic monomer e.g. melamine
ATE245055T1 (en) * 1999-04-15 2003-08-15 Fraunhofer Ges Forschung RELEASE LAYER, METHOD FOR PRODUCING IT AND USE
DE19935181C5 (en) * 1999-07-27 2004-05-27 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Process for protecting a vacuum-processed substrate and use of the process

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