CN100530321C - Impulse driving circuit - Google Patents
Impulse driving circuit Download PDFInfo
- Publication number
- CN100530321C CN100530321C CN 200610060734 CN200610060734A CN100530321C CN 100530321 C CN100530321 C CN 100530321C CN 200610060734 CN200610060734 CN 200610060734 CN 200610060734 A CN200610060734 A CN 200610060734A CN 100530321 C CN100530321 C CN 100530321C
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- China
- Prior art keywords
- driving circuit
- pulse
- pulse driving
- raceway groove
- grid
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Abstract
A pulse driving circuit is prepared as connecting grid of N channel field effect tube to pulse generating device through isolation capacity and drain electrode to a load circuit as well as source electrode to a DC power supply, connecting current-limit resistance and diode separately between grid and source electrode of transistor, connecting negative electrode of said diode to grid of N channel field effect tube and using said pulse generating device to output a pulse signal for driving said pulse driving circuit.
Description
Technical field
The present invention relates to a kind of pulse driving circuit that is used for LCD.
Background technology
LCD has frivolous, and power consumption is hanged down and characteristics such as radiation is few, therefore is widely used in fields such as portable DVD player, visual music player, mobile phone and notebook computer.Because the liquid crystal molecule itself in the LCD is not luminous, therefore LCD need be thrown light on by a module backlight and be realized that image shows, common module backlight comprises a plurality of backlight lamp tubes and an inverter (inverter) circuit, and this inverter circuit converts direct current to alternating current and is used to drive this backlight lamp tube.Usually, the inverter circuit of prior art comprises that a pulse driving circuit is used to drive a coil.
Seeing also Fig. 1, is a kind of circuit diagram of prior art pulse driving circuit.This pulse driving circuit 100 comprises a pulse generating device 110, a N channel field-effect pipe 120, a P-channel field-effect transistor (PEFT) pipe 130, a current-limiting resistance 140, a NPN transistor 150, a PNP transistor 151, a load circuit 160 and a 12V direct supply 170.
This pulse generating device 110 is pulse-width modulation integrated circuit, and it can produce a pulse signal, and high voltage is 5V, and low-voltage is 0V, frequency 52KHz.This load circuit 160 is transformer coils.
The drain D of this P raceway groove crystal field effects pipe 130 is connected to this load circuit 160, and source S is connected to this direct supply 170.
The grid G of this N raceway groove crystal field effects pipe 120 is connected to this pulse generating device 110, source S ground connection, and drain D is connected to this direct supply 170 by this current-limiting resistance 140.
The base stage b of the base stage b of this NPN transistor 150 and this PNP transistor 151 all is connected to the drain D of this N raceway groove crystal field effects pipe 120.The emitter e of the emitter e of this NPN transistor 150 and this PNP transistor 151 all is connected to the grid G of this P raceway groove crystal field effects pipe 130.The collector c of this NPN transistor 150 is connected to this direct supply 170.The collector c ground connection of this PNP transistor 151.This NPN transistor 150 and this PNP transistor 151 are formed a booster circuit.
When this pulse generating device 110 produces the high voltage of 5V, these N raceway groove crystal field effects pipe 120 conductings, its drain D ground connection is 0V.Therefore this NPN transistor 150 is ended, these PNP transistor 151 conductings, and the emitter e of this PNP transistor 151 is by its collector c ground connection.Because the emitter e of this PNP transistor 151 is connected to the grid G of this P raceway groove crystal field effects pipe 130, thus the grid G of this P raceway groove crystal field effects pipe 130 drop-down be low-voltage 0V.The grid G of this P raceway groove crystal field effects pipe 130 and the voltage V between the source S
Gs=-12V, these P raceway groove crystal field effects pipe 130 conductings.
When this pulse generating device 110 produced the low-voltage of 0V, this N raceway groove crystal field effects pipe 120 ended, and the voltage of its drain D is 12V.Therefore this PNP transistor 151 is ended, these NPN transistor 150 conductings, and the emitter e of this NPN transistor 150 is 12V after being connected to this direct supply 170.Because the emitter e of this NPN transistor 150 is connected to the grid G of this P raceway groove crystal field effects pipe 130, so the grid G voltage of this P raceway groove crystal field effects pipe 130 is raised and is 12V.The grid G of this P raceway groove crystal field effects pipe 130 and the voltage V between the source S
Gs=0V, this P raceway groove crystal field effects pipe 130 ends.
Because this pulse generating device 110 produces the pulse signal of frequency 52KHz, therefore just with the frequency conduction and cut-off of 52KHz, the direct supply of this 12V is by this P raceway groove crystal field effects pipe 130 this load circuit 160 of frequency drives with 52KHz for this P raceway groove crystal field effects pipe 130.But this pulse driving circuit 100 comprises four transistors, so structure is complicated, and cost is higher.
Summary of the invention
In order to solve the complicated shortcoming of pulse driving circuit structure in the prior art, be necessary to provide a kind of structure better simply pulse driving circuit.
A kind of pulse driving circuit, it comprises a pulse generating device, an isolation capacitance, a N raceway groove crystal field effects pipe, a current-limiting resistance and a diode.This transistor gate is connected to this pulse generating device by this isolation capacitance, and this transistor drain is connected to a load circuit, and this transistor source is connected to a direct current power supply.This current-limiting resistance and this diode are connected between this transistor gate and the source electrode, and the negative pole of this diode is connected to this transistor gate.This pulse generating device is exported a pulse signal and is used to drive this pulse driving circuit.
Compared to prior art, above-mentioned pulse driving circuit has only adopted a transistor just to realize the function of pulsed drive, so the structure of this pulse driving circuit is simpler.
Description of drawings
Fig. 1 is the circuit diagram of prior art pulse driving circuit.
Fig. 2 is the circuit diagram of pulse driving circuit one better embodiment of the present invention.
Embodiment
Seeing also Fig. 2, is the circuit diagram of pulse driving circuit one better embodiment of the present invention.This pulse driving circuit 200 comprises a pulse generating device 210, an isolation capacitance 220, a N raceway groove crystal field effects pipe 230, a current-limiting resistance 240, a diode 250, a load circuit 260 and a 12V direct supply 270.This pulse generating device 210 is pulse-width modulation integrated circuit, and it can produce a pulse signal and be used to drive this pulse driving circuit 200, and the high voltage of pulse signal is 5V, and low-voltage is 0V, frequency 52KHz.This load circuit 260 is transformer coils.
The grid G of this transistor 230 is connected to this pulse generating device 210 by this isolation capacitance 220, and drain D is connected to this load circuit 260, and source S is connected to this direct supply 270.
This current-limiting resistance 240 is connected between the grid G and source S of this transistor 230.This diode 250 also is connected between the grid G and source S of this transistor 230, and the negative pole of this diode 250 is connected to this transistor 230 grid G.
The principle of work of this pulse driving circuit 200 is described below: when a LCD (figure does not show) when activating, at first produce this 12V direct supply 270, and pulse generating device 210 does not also produce pulse signal.At this moment, the voltage of these transistor 230 grid G is 11.3V, the voltage V between these transistor 230 grid G and the source S
GsAbout=-0.7V.So this transistor 230 ends, this pulse driving circuit 200 is not worked.
When this pulse generating device 210 produces the high voltage of 5V, can not saltus step because be added in the voltage at isolation capacitance 220 two ends, the grid G voltage jump of this transistor 230 is 16.3V, at this moment, the grid G of this transistor 230 and the voltage V between the source S
GsAbout=4.3V, make these transistor 230 conductings.
When this pulse generating device 210 produced the low-voltage of 0V, the voltage of these transistor 230 grid G was 11.3V, the grid G of this transistor 230 and the voltage V between the source S
GsAbout=-0.7V, make this transistor 230 end.
Because of this pulse generating device 210 produces frequencies is the pulse signal of 52KHz, so this transistor 230 is just with the frequency conduction and cut-off of 52KHz, and the direct supply of this 12V passes through this transistor 230 this load circuit 260 of frequency drives with 52KHz.
In this pulse driving circuit 200, the withstand voltage of this diode 250 is 75V, and this isolation capacitance 220 and current-limiting resistance 240 satisfy time constant computing formula RC=T.Wherein R represents the resistance value of current-limiting resistance 240, and C represents the capacitance of isolation capacitance 220, and T represents the time constant that discharges and recharges of RC circuit that this isolation capacitance 220 and current-limiting resistance 240 form.In order to allow the pulse signal held stationary, need time constant T to be established greatly as far as possible, still, it's the on time that conference influences LCD pasts time constant T.Take all factors into consideration the frequency of above two factors and pulse signal, a preferable time constant T is 2 milliseconds, and a better electrical resistance of current-limiting resistance 240 is 2K Ω, and a preferable capacitance of isolation capacitance is 1 μ F.In addition, according to the different pulse signals of pulse generating device 210 generations and the different internal resistances of load circuit 260, the size of this isolation capacitance 220 and current-limiting resistance 240 can also have different selections.
Compared with prior art, this pulse driving circuit 200 has only adopted a transistor 230 just to realize the function of pulsed drive, so the structure of this pulse driving circuit 200 is simpler.
Claims (10)
1. pulse driving circuit, it comprises:
One pulse generating device, it is exported a pulse signal and is used to drive this pulse driving circuit,
One isolation capacitance,
One N raceway groove crystal field effects pipe, the grid of this N raceway groove crystal field effects pipe is connected to this pulse generating device by this isolation capacitance, the drain electrode of this N raceway groove crystal field effects pipe is connected to a load circuit, and the source electrode of this N raceway groove crystal field effects pipe is connected to a direct current power supply
One current-limiting resistance, it is connected between the grid and source electrode of this N raceway groove crystal field effects pipe,
One diode, it is connected between the grid and source electrode of this N raceway groove crystal field effects pipe, and the negative pole of this diode is connected to the grid of this N raceway groove crystal field effects pipe.
2. pulse driving circuit as claimed in claim 1 is characterized in that: this direct supply is the direct supply of a 12V voltage.
3. pulse driving circuit as claimed in claim 1 is characterized in that: the high voltage of this pulse signal is 5V, and low-voltage is 0V.
4. pulse driving circuit as claimed in claim 3 is characterized in that: the frequency of this pulse signal is 52KHz.
5. pulse driving circuit as claimed in claim 1, it is characterized in that: this current-limiting resistance and this isolation capacitance satisfy time constant computing formula RC=T, wherein R is the resistance value of current-limiting resistance, C is the capacitance of this isolation capacitance, and T represents the time constant that discharges and recharges of RC circuit that this isolation capacitance and this current-limiting resistance form.
6. pulse driving circuit as claimed in claim 5 is characterized in that: the resistance value of this current-limiting resistance is 2K Ω.
7. pulse driving circuit as claimed in claim 5 is characterized in that: the capacitance of this isolation capacitance is 1 μ F.
8. pulse driving circuit as claimed in claim 1 is characterized in that: the withstand voltage of this diode is 75V.
9. pulse driving circuit as claimed in claim 1 is characterized in that: this pulse generating device is a pulse-width modulation integrated circuit.
10. pulse driving circuit as claimed in claim 1 is characterized in that: this load circuit is a transformer coil.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200610060734 CN100530321C (en) | 2006-05-19 | 2006-05-19 | Impulse driving circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200610060734 CN100530321C (en) | 2006-05-19 | 2006-05-19 | Impulse driving circuit |
Publications (2)
Publication Number | Publication Date |
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CN101075411A CN101075411A (en) | 2007-11-21 |
CN100530321C true CN100530321C (en) | 2009-08-19 |
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Family Applications (1)
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CN 200610060734 Expired - Fee Related CN100530321C (en) | 2006-05-19 | 2006-05-19 | Impulse driving circuit |
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CN (1) | CN100530321C (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7750715B2 (en) * | 2008-11-28 | 2010-07-06 | Au Optronics Corporation | Charge-sharing method and device for clock signal generation |
CN103438258A (en) * | 2013-09-05 | 2013-12-11 | 吴建堂 | Water tap with automatic water-cut-off function at time delay |
CN108696267B (en) * | 2017-04-12 | 2021-11-30 | 赤多尼科两合股份有限公司 | Driving device and driving method of field effect transistor and power supply device |
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2006
- 2006-05-19 CN CN 200610060734 patent/CN100530321C/en not_active Expired - Fee Related
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CN101075411A (en) | 2007-11-21 |
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Granted publication date: 20090819 Termination date: 20170519 |
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