CN103474033A - Boost control circuit and control method thereof, boost circuit, and display apparatus - Google Patents

Boost control circuit and control method thereof, boost circuit, and display apparatus Download PDF

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Publication number
CN103474033A
CN103474033A CN201310346969XA CN201310346969A CN103474033A CN 103474033 A CN103474033 A CN 103474033A CN 201310346969X A CN201310346969X A CN 201310346969XA CN 201310346969 A CN201310346969 A CN 201310346969A CN 103474033 A CN103474033 A CN 103474033A
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China
Prior art keywords
triode
boost control
boost
circuit
control chip
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CN201310346969XA
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CN103474033B (en
Inventor
王立岩
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BOE Technology Group Co Ltd
Beijing BOE Display Technology Co Ltd
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BOE Technology Group Co Ltd
Beijing BOE Display Technology Co Ltd
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Priority to CN201310346969.XA priority Critical patent/CN103474033B/en
Priority to PCT/CN2013/087211 priority patent/WO2015018140A1/en
Publication of CN103474033A publication Critical patent/CN103474033A/en
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B41/00Circuit arrangements or apparatus for igniting or operating discharge lamps
    • H05B41/14Circuit arrangements
    • H05B41/26Circuit arrangements in which the lamp is fed by power derived from dc by means of a converter, e.g. by high-voltage dc
    • H05B41/28Circuit arrangements in which the lamp is fed by power derived from dc by means of a converter, e.g. by high-voltage dc using static converters
    • H05B41/288Circuit arrangements in which the lamp is fed by power derived from dc by means of a converter, e.g. by high-voltage dc using static converters with semiconductor devices and specially adapted for lamps without preheating electrodes, e.g. for high-intensity discharge lamps, high-pressure mercury or sodium lamps or low-pressure sodium lamps
    • H05B41/2885Static converters especially adapted therefor; Control thereof
    • H05B41/2886Static converters especially adapted therefor; Control thereof comprising a controllable preconditioner, e.g. a booster
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12Modifications for increasing the maximum permissible switched current
    • H03K17/122Modifications for increasing the maximum permissible switched current in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6877Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00Aspects of power supply; Aspects of display protection and defect management
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/3406Control of illumination source
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/02Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps

Abstract

The invention provides a boost control circuit and a control method thereof, a boost circuit, and a display apparatus. A first triode and a second triode which are of different types are arranged in the boost control circuit. The base electrodes of the first triode and the second triode are connected with the driving voltage output pin of a boost control chip at a first node; the emitter electrodes of the first triode and the second triode are connected with the grid electrode of at least one transistor at a second node; the collector electrode of the first triode is connected with a first input power supply; and the collector electrode of the second triode is connected with a second input power supply. By using the method, circuits and device provided by the invention, the control signal intensity of the boost control chip can be amplified, and the driving capability of the boost control chip over a switch transistor (MOS) is enhanced, so that a large-power switch MOS can be driven by the boost control chip with limited driving capacity in a large-dimension backlight scanning driving circuit, and the display quality of a liquid crystal panel can be guaranteed.

Description

Boost control circuit and control method thereof, booster circuit, display device
Technical field
The present invention relates to the display technique field, specifically can relate to a kind of boost control circuit and control method thereof driven for the backlight module of realizing the large scale liquid crystal panel, and the booster circuit and the display device that are provided with this boost control circuit.
Background technology
Along with the development of liquid crystal panel, the large scale liquid crystal panel becomes the forward position of development gradually.
Size increase due to liquid crystal panel, therefore need in backlight module to arrange more lamp bar as backlight, to realize the normal display brightness of large scale liquid crystal panel.
Due to increasing of lamp bar, therefore need higher operating voltage drive the lamp bar luminous, this need to arrange withstand voltage height, high-power switching transistor (MOS) with for boosting at booster circuit.
In prior art, the control pin direct voltage output signal of boost control chip is to the grid (the G utmost point) of master switch MOS, signal driver (being that electric current is less) limited in one's ability due to the direct output of boost control chip, cause driving high power switch MOS normal operation, thereby affect the display quality of liquid crystal panel.
Summary of the invention
The invention provides a kind of boost control circuit and control method thereof, booster circuit, display device, thereby can strengthen the driving force of boost control chip to switching transistor (MOS), guarantee the display quality of liquid crystal panel.
The invention provides scheme as follows:
The embodiment of the present invention provides a kind of boost control circuit, comprises boost control chip and at least one transistor, and described boost control circuit also comprises:
For alternately amplifying the control signal intensity of described boost control chip output, and the control signal after amplifying is exported to the first triode and second triode of described at least one transistor gate;
The base stage of described the first triode and the second triode, be connected with the driving voltage output pin of described boost control chip;
The emitter of described the first triode and the second triode, be connected with described at least one transistorized grid;
The collector of described the first triode connects the first input power;
The collector of described the second triode connects the second input power.
Preferably, the type of described the first triode is the NPN type, and the type of described the second triode is positive-negative-positive; Perhaps,
The type of described the first triode is positive-negative-positive, and the type of described the second triode is the NPN type.
Preferably, described at least one transistorized source electrode is connected with the boost module in booster circuit;
Described at least one transistorized drain electrode is connected with described the second input power.
Preferably, described boost control circuit comprises the first transistor and transistor seconds;
Be provided with resistance between the grid of described the first transistor and the grid of described transistor seconds.
Preferably, one of described the first input power and described second input power are ground.
The embodiment of the present invention also provides a kind of booster circuit control method, comprising:
When boost control chip is exported the first control signal, the first triode conducting, the second triode cut-off, the first triode exports at least one transistorized grid to after the signal intensity of described the first control signal is amplified;
When boost control chip is exported the second control signal, the first triode cut-off, the second triode conducting, the second triode exports at least one transistorized grid to after the signal intensity of described the second control signal is amplified.
Preferably, described the first control signal is different from the current potential of described the second control signal.
The embodiment of the present invention also provides a kind of booster circuit, and this booster circuit specifically can comprise the boost control circuit that the invention described above embodiment provides.
Preferably, described booster circuit can also comprise:
The boost module that is boosted and process for the voltage to the 3rd input power input, described boost module is connected with the output terminal of described at least one transistorized source electrode and booster circuit;
For realizing the supplementary module of boost control chip normal operation, described supplementary module is connected with the output terminal of described boost control chip and booster circuit;
Be used to boost control chip that the supply module of driving power is provided, described supply module is connected with described boost control chip.
The embodiment of the present invention also provides a kind of display device, and described display device specifically can comprise booster circuit that the invention described above embodiment the provides driving circuit as backlight.
From the above, can find out, boost control circuit provided by the invention and control method thereof, booster circuit, display device, by be provided for alternately amplifying the control signal intensity of described boost control chip output in boost control circuit, and the described control signal after amplifying is exported to the first triode and second triode of described at least one transistor gate; The base stage of described the first triode and the second triode is connected with the driving voltage output pin of described boost control chip; The emitter of described the first triode and the second triode, be connected with described at least one transistorized grid; The collector of described the first triode connects the first input power; The collector of described the second triode connects the second input power.Thereby the control signal strength of current of boost control chip output can be amplified, strengthen the driving force of boost control chip to switching transistor (MOS), to realize the driving of the limited boost control chip of driving force in large scale scan drive circuit backlight to high power switch MOS, guarantee the display quality of liquid crystal panel.
The accompanying drawing explanation
The boost control circuit structural representation one that Fig. 1 provides for the embodiment of the present invention;
The boost control circuit structural representation two that Fig. 2 provides for the embodiment of the present invention;
The booster circuit control method schematic flow sheet that Fig. 3 embodiment of the present invention provides;
The boost circuit structure schematic diagram one that Fig. 4 provides for the embodiment of the present invention;
The boost circuit structure schematic diagram two that Fig. 5 provides for the embodiment of the present invention.
Embodiment
For the purpose, technical scheme and the advantage that make the embodiment of the present invention is clearer, below in conjunction with the accompanying drawing of the embodiment of the present invention, the technical scheme of the embodiment of the present invention is clearly and completely described.Obviously, described embodiment is a part of embodiment of the present invention, rather than whole embodiment.Based on described embodiments of the invention, the every other embodiment that those of ordinary skills obtain, belong to the scope of protection of the invention.
Unless otherwise defined, technical term used herein or scientific terminology should be the ordinary meaning that the personage that has general technical ability under the present invention in field understands." first " of using in patent application specification of the present invention and claims, " second " and similar word do not mean any order, quantity or importance, and just are used for distinguishing different ingredients.Equally, " one " or similar words such as " one " do not mean restricted number yet, and mean and have at least one." connection " or " being connected " etc. similarly word not be defined in connection physics or machinery, but can comprise electrical connection, no matter be directly or indirectly." on ", D score, " left side ", " right side " etc. are only for meaning relative position relation, after the absolute position that is described object changes, this relative position relation also correspondingly changes.
The embodiment of the present invention provides a kind of boost control circuit, as shown in Figure 1, specifically can comprise boost control chip 1 and at least one transistor etc.
This boost control circuit specifically can also comprise:
For alternately amplifying the control signal intensity of boost control chip 1 output, and the control signal after amplifying is exported to triode T1 and the triode T2 of described at least one transistor gate;
Wherein, the base stage of triode T1 and triode T2, be connected with the driving voltage output pin of boost control chip 1;
The emitter of triode T1 and triode T2, be connected with at least one transistorized grid;
The collector of triode T1 connects the first input power;
The collector of triode T2 connects the second input power.
The boost control circuit that the embodiment of the present invention provides, utilize triode can realize the function that electric current amplifies, the control signal strength of current of boost control chip 1 output is amplified, strengthen the driving force of boost control chip to switching transistor (MOS), to realize the driving of the limited boost control chip of driving force in large scale scan drive circuit backlight to high power switch MOS, guarantee the display quality of liquid crystal panel.
Purpose for the control signal strength of current that realizes alternately amplifying boost control chip 1 output, in the embodiment of the present invention, triode T1 can be with triode T2 two kinds of triodes that type is different, in one embodiment, the type of triode T1 can be the NPN type, and the type of triode T2 can be positive-negative-positive; Perhaps, the type of triode T1 can be positive-negative-positive, and the type of triode T2 can be the NPN type.
Be in the embodiment of the present invention, no matter the pin (for example the driving DC voltage output pin is the DR pin) of boost control chip 1 is exported the level (for example high level or low level) of which kind of current potential, in the boost control circuit that the embodiment of the present invention provides, a triode is always arranged in conducting state, for realizing, the control signal strength of current of boost control chip 1 output is amplified, and the control signal after amplifying is exported to the grid (being the G utmost point) of switch MOS, thereby driving switch MOS is in desired conducting or cut-off state.
In the embodiment of the present invention, as shown in Figure 2, at least one transistor is that the boost module 2 that the source electrode of switch MOS arranges in can the booster circuit related with the embodiment of the present invention is connected, and at least one transistorized drain electrode can be connected with the second input power.Like this, when the high electric current of the first triode T1 or the second triode T2 output can make at least one transistor driving conducting state, make the circuit communication between boost module 2 and the second input power, thereby drag down the voltage that boost control circuit is exported.
In the embodiment of the present invention, one of described the first input power and described second input power are ground.In one embodiment, the first input power specifically can be the power supply of input+12V voltage, and the second input power specifically can be the power supply of ground or other input low-voltages.
In an alternate embodiment of the present invention, as shown in Figure 2, in the boost control circuit that the embodiment of the present invention provides, specifically can comprise transistor T 3 and transistor T 4, and the grid of transistor T 3 and T4 all is connected with the emitter of the second triode T2 with the first triode T1.
In addition, in an alternate embodiment of the present invention, in order to ensure the normal operation of booster circuit, also can be provided with a plurality of resistance, to play the effects such as filtering, obstruct.
Concrete, as shown in Figure 2, in the boost control circuit that the embodiment of the present invention provides, specifically can comprise the resistance R 32 between the grid of the grid that is arranged at transistor T 3 and transistor T 4, and the resistance shown in other accompanying drawings 2 etc.
The boost control circuit that the embodiment of the present invention provides, can arrange corresponding resistance based on needs.
The embodiment of the present invention also provides a kind of booster circuit control method, and as shown in Figure 3, the method specifically can comprise:
Step 31, when boost control chip is exported the first control signal, triode T1 conducting, triode T2 cut-off, triode T1 exports at least one transistorized grid to after the signal intensity of described the first control signal is amplified;
Step 32, when boost control chip is exported the second control signal, triode T1 cut-off, triode T2 conducting, triode T2 exports at least one transistorized grid to after the signal intensity of described the second control signal is amplified.
Preferably, described the first control signal is different from the current potential of described the second control signal.
In one embodiment, take the boost control circuit shown in accompanying drawing 2 as example, when the DR of boost control chip 1 pin output control signal, triode T1(be take positive-negative-positive as example) and triode T2(take the NPN type as example) combination, the state in a conducting, a cut-off all the time.When DR pin output high level, triode T1 is in conducting state, and triode T2 is in cut-off state; When DR pin output low level, triode T1 is in cut-off state, and triode T2 is in conducting state.Be that transistor T 1 and transistor T 2 are controlled by two complementary signals respectively.So, during the output low and high level, triode T1 and triode T2 alternation, the common-emitter of triode T1 and triode T2 unites two into one two signals again, and then drives master switch MOS T3 and T4, has lowered power consumption.
No matter the control signal due to boost control chip output is by after triode T1 amplification, exporting switch MOS to again, or export switch MOS to after amplifying by triode T2, because the conducting resistance of triode T1 and triode T2 is all very little, make the RC constant of switch MOS very little, rate of transformation is very fast.Therefore, the boost control circuit that the embodiment of the present invention provides had both improved the load capacity of boost control circuit, improved again switching speed.
The boost control circuit passed through based on the above embodiment of the present invention, the embodiment of the present invention can also provide a kind of booster circuit, in this booster circuit, specifically can comprise the boost control circuit that the invention described above embodiment provides.
In addition, as shown in Figure 4, this booster circuit specifically can also comprise:
The boost module 2 that is boosted and process for the voltage to the 3rd input power input, described boost module 2 is connected with the source electrode of at least one transistor (being switch MOS) and the output terminal of booster circuit;
For realizing the supplementary module 3 of boost control chip 1 normal operation, described supplementary module 3 is connected with the output terminal of boost control chip 1 and booster circuit;
Be used to boost control chip 1 that the supply module 4 of driving power is provided, described supply module 4 is connected with boost control chip 1.
A specific embodiment of the booster circuit that the embodiment of the present invention provides can be as shown in Figure 5, and resistance, electric capacity related in this booster circuit can be selected based on needs.
The specific operation process of the booster circuit provided due to the embodiment of the present invention can be same as the prior art, therefore, repeats no more the specific implementation process of this booster circuit.
In an alternate embodiment of the present invention, the boost control circuit provided based on the above embodiment of the present invention, the embodiment of the present invention can also provide a kind of display device, and this display device specifically can comprise booster circuit that the invention described above embodiment the provides driving circuit as backlight.
Described display device can be: any product or parts with Presentation Function such as liquid crystal panel, LCD TV, liquid crystal display, digital album (digital photo frame), mobile phone, panel computer.
From the above, can find out, boost control circuit provided by the invention and control method thereof, booster circuit, display device, by be provided for alternately amplifying the control signal intensity of described boost control chip output in boost control circuit, and the described control signal after amplifying is exported to the first triode and second triode of described at least one transistor gate; The base stage of described the first triode and the second triode, be connected with the driving voltage output pin of described boost control chip; The emitter of described the first triode and the second triode, be connected with described at least one transistorized grid; The collector of described the first triode connects the first input power; The collector of described the second triode connects the second input power.Thereby the control signal strength of current of boost control chip output can be amplified, strengthen the driving force of boost control chip to switching transistor (MOS), to realize the driving of the limited boost control chip of driving force in large scale scan drive circuit backlight to high power switch MOS, guarantee the display quality of liquid crystal panel.
The above is only embodiments of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.

Claims (10)

1. a boost control circuit, comprise boost control chip and at least one transistor, it is characterized in that, described boost control circuit also comprises:
For alternately amplifying the control signal intensity of described boost control chip output, and the control signal after amplifying is exported to the first triode and second triode of described at least one transistor gate;
The base stage of described the first triode and the second triode, be connected with the driving voltage output pin of described boost control chip;
The emitter of described the first triode and the second triode, be connected with described at least one transistorized grid;
The collector of described the first triode connects the first input power;
The collector of described the second triode connects the second input power.
2. boost control circuit as claimed in claim 1, is characterized in that, the type of described the first triode is the NPN type, and the type of described the second triode is positive-negative-positive; Perhaps,
The type of described the first triode is positive-negative-positive, and the type of described the second triode is the NPN type.
3. boost control circuit as claimed in claim 1, is characterized in that, described at least one transistorized source electrode is connected with the boost module in booster circuit;
Described at least one transistorized drain electrode is connected with described the second input power.
4. boost control circuit as claimed in claim 1, is characterized in that, described boost control circuit comprises the first transistor and transistor seconds;
Be provided with resistance between the grid of described the first transistor and the grid of described transistor seconds.
5. boost control circuit as claimed in claim 1, is characterized in that, one of described the first input power and described second input power are ground.
6. a booster circuit control method, is characterized in that, comprising:
When boost control chip is exported the first control signal, the first triode conducting, the second triode cut-off, the first triode exports at least one transistorized grid to after the signal intensity of described the first control signal is amplified;
When boost control chip is exported the second control signal, the first triode cut-off, the second triode conducting, the second triode exports at least one transistorized grid to after the signal intensity of described the second control signal is amplified.
7. method as claimed in claim 6, is characterized in that, described the first control signal is different from the current potential of described the second control signal.
8. a booster circuit, is characterized in that, comprises boost control circuit as described as claim 1 to 5 any one.
9. booster circuit as claimed in claim 8, is characterized in that, also comprises:
The boost module that is boosted and process for the voltage to the 3rd input power input, described boost module is connected with the output terminal of described at least one transistorized source electrode and booster circuit;
For realizing the supplementary module of boost control chip normal operation, described supplementary module is connected with the output terminal of described boost control chip and booster circuit;
Be used to boost control chip that the supply module of driving power is provided, described supply module is connected with described boost control chip.
10. a display device, is characterized in that, described display device comprises the driving circuit of the described booster circuit of described claim 8 or 9 as backlight.
CN201310346969.XA 2013-08-09 2013-08-09 Boost control circuit and control method, booster circuit, display device Active CN103474033B (en)

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CN201310346969.XA CN103474033B (en) 2013-08-09 2013-08-09 Boost control circuit and control method, booster circuit, display device
PCT/CN2013/087211 WO2015018140A1 (en) 2013-08-09 2013-11-15 Boost control circuit and control method thereof, boost circuit and display device

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