CN100527363C - Method for making opening and contact window - Google Patents
Method for making opening and contact window Download PDFInfo
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- CN100527363C CN100527363C CNB2005101297158A CN200510129715A CN100527363C CN 100527363 C CN100527363 C CN 100527363C CN B2005101297158 A CNB2005101297158 A CN B2005101297158A CN 200510129715 A CN200510129715 A CN 200510129715A CN 100527363 C CN100527363 C CN 100527363C
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Abstract
A kind of opening and contact window's manufacturing method. In the process of manufacturing the opening, the photoresist layer that is formed on the dielectric layer will conduct a disposal procedure over the exposed surface of the dielectric layer so as to form a film before it becomes the defined opening figure, which can prevent the reaction that is made by the spillage of the dielectric material ingredients) and the photoresist layer, and then results in the problems of uncompleted develop further, in another hand, in the process of fabricating the formation contact window, the exposed dielectric layer surface) will be disposed firstly so as to form a film layer before the contact window surface forms a obstructing layer, which can prevent the reaction it will be made by the spillage of the ingredients of dielectric material and the obstructing layer, and then further prevent the obstructing layer from producing defective problems.
Description
Technical field
The present invention relates to the manufacture method of a kind of opening and contact hole, relate in particular to the manufacture method of opening and the contact hole of a kind of give vent to anger (outgasing) that can effectively suppress dielectric material.
Background technology
When the development of very lagre scale integrated circuit (VLSIC) (Ultra Large Scale Integration) arrives 0.13 μ m when following, for improving the execution speed of chip, need overcome the time delay that impedance (impedance) and capacitive reactance (capacitance) are caused effectively, therefore take the dielectric material of low-k and copper to become trend of the times as internal connection-wire structure.But, because the dielectric material of low-k has bad physical characteristic, mistakes (phenomenon of promptly giving vent to anger) etc. that for example softer, poor heat stability, processing are difficult for and central composition easily escapes is very difficult so will keep good defective to control in copper/advanced low-k materials technology.
Figure 1A is the manufacturing process profile that illustrates existing a kind of double-metal inlaid structure opening to Fig. 1 C.
At first, please refer to Figure 1A, on the substrate 100 that is formed with conductor layer 102, form one dielectric layer 104.Wherein, the material of dielectric layer 104 is the dielectric material of low-k.On dielectric layer 104, form the photoresist 106 of a patterning afterwards, and expose part dielectric layer 104.
Then, please refer to Figure 1B, is mask with the photoresist layer 106 (shown in Figure 1A) of patterning, removes part dielectric layer 104, up to exposing conductor layer 102, to form contact window 108 in dielectric layer 104a.Afterwards, remove the photoresist layer 106 of patterning.Then, form the photoresist layer 110 of another layer patternization in substrate 100 tops.
Thereafter, please refer to Fig. 1 C, is mask with the photoresist layer 110 (shown in Figure 1B) of patterning, removes part dielectric layer 104a, to form contact window 108 and lead irrigation canals and ditches 112 in dielectric layer 104b.And contact window 108 is formed a bimetal mosaic structure opening 114 with lead irrigation canals and ditches 112.Then, remove the photoresist layer 110 of patterning.
Yet in the manufacture method of above-mentioned formation dual-metal inserting opening, dielectric layer 104 itself has the phenomenon of giving vent to anger, and promptly the ease of the one-tenth branch in the dielectric layer 104 is lost.So, the part that the photoresist layer 106,110 of patterning contacts with dielectric layer 104, dielectric material composition and 106, the 110 generation effect of photoresist layer that may overflow because of the phenomenon of giving vent to anger, and incomplete phenomenon takes place to develop in follow-up developing process, can make that so the definition of contact window or lead irrigation canals and ditches is not accurate.On the other hand, produce problems such as spike phenomenon (spike), electromigration (electromigration) or tackness be not good, generally can in opening, form barrier layer as protection for fear of the metal of in subsequent technique, inserting opening.Yet defective also can take place because of the giving vent to anger phenomenon of dielectric material of low-k in this barrier layer, and then makes the element reliability descend.
Existing a kind of method can be improved the phenomenon of giving vent to anger of low dielectric constant dielectric materials, promptly forms a barrier layer (block layer) on dielectric layer.But this way also can cause defective because of producing stress except meeting makes that cost improves.On the other hand, because the easier generation parasitic capacitance of the existence on barrier layer is more remarkable when especially the material on the barrier layer is high dielectric constant material.
Summary of the invention
In view of this, the purpose of this invention is to provide a kind of manufacture method of opening, can avoid producing the incomplete problem of developing, to obtain accurate patterns of openings because of the phenomenon of giving vent to anger of dielectric material.
Another object of the present invention provides a kind of manufacture method of contact hole, can suppress to make barrier layer produce defective because of the phenomenon of giving vent to anger of dielectric material, and then influence the problem of element reliability.
The present invention proposes a kind of manufacture method of opening, at first forms a dielectric layer on a conductor layer.Then, form the mask layer of a patterning on dielectric layer, the mask layer of this patterning is to expose the part dielectric layer that preboarding becomes irrigation canals and ditches.Then, a treatment step is carried out on the dielectric layer surface that mask layer exposed that is patterned, to form a rete, wherein this rete is used for avoiding the composition ease of dielectric layer to lose.Next, form the photoresist layer of a patterning on patterned mask layer and the part dielectric layer that comes out, the photoresist layer of this patterning is to expose the predetermined part dielectric layer that forms contact window.Then, be mask with the photoresist layer of patterning, remove the dielectric layer of the exposure of part, to form the contact window of a part.Afterwards, remove the photoresist layer of patterning.Then, be mask with the mask layer of patterning, the dielectric layer that removes exposure comes out up to the conductor layer surface, and to form irrigation canals and ditches and a complete contact window in dielectric layer, wherein irrigation canals and ditches are positioned at above the contact window.
According to the manufacture method of the described opening of the preferred embodiment of the present invention, wherein the thickness of rete is less than 1000 dusts.
According to the manufacture method of the described opening of the preferred embodiment of the present invention, wherein treatment step comprises and carries out an ion implantation technology or a gas plasma body technology.
According to the manufacture method of the described opening of the preferred embodiment of the present invention, wherein the dopant that injects of ion implantation technology comprises boron, boron fluoride, hydrogen phosphide, arsenic, aluminium or fluorine.
According to the manufacture method of the described opening of the preferred embodiment of the present invention, wherein the dosage that injects of ion implantation technology is between 10
14To 10
16Between atomicity/square centimeter.
According to the manufacture method of the described opening of the preferred embodiment of the present invention, wherein the energy that injects of ion implantation technology is between between the 80KeV to 120KeV.
According to the manufacture method of the described opening of the preferred embodiment of the present invention, wherein the employed gas of gas plasma body technology comprises nitrogen, oxygen or hydrogen.
According to the manufacture method of the described opening of the preferred embodiment of the present invention, wherein the plasma density of gas plasma body technology is between 10
-11To 10
-13Between the ions/atoms.
According to the manufacture method of the described opening of the preferred embodiment of the present invention, wherein the material of dielectric layer comprises the dielectric material or the fluorine silicon glass of low-k.
The present invention is because of carrying out a treatment step to exposed dielectric layer surface, on dielectric layer, to form a rete, and this rete can effectively suppress the phenomenon of giving vent to anger of dielectric material, so can avoid the dielectric material composition of overflowing and other material production effect in the technology, and take place such as developing not exclusively or causing the problems such as defective of barrier layer.
For above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Figure 1A is the manufacturing process profile that illustrates existing a kind of double-metal inlaid structure opening to Fig. 1 C;
Fig. 2 A is the manufacturing process profile that illustrates a kind of opening of first preferred embodiment of the invention to Fig. 2 C;
Fig. 3 A is the manufacturing process profile that illustrates a kind of opening of second preferred embodiment of the invention to Fig. 3 B;
Fig. 4 A is the manufacturing process profile that illustrates a kind of opening of third preferred embodiment of the invention to Fig. 4 B;
Fig. 5 A is the manufacturing process profile that illustrates contact hole in one embodiment of the present invention to 5C.
The main element symbol description
100: substrate
102,200,300,400,500,530: conductor layer
104,104a, 104b, 210,310,410,510: dielectric layer
106,110,230,330,430: the photoresist layer
108,214a, 214b, 314,414,514: contact window
112,216,316,416,516: irrigation canals and ditches
114: bimetal mosaic structure opening
212,312,412,512: rete
218,318,418,518: opening
220: mask layer
520: barrier layer
532: contact hole
Embodiment
＜the first embodiment 〉
Fig. 2 A is the manufacturing process profile that illustrates a kind of opening of first preferred embodiment of the invention to Fig. 2 C.
At first, please refer to Fig. 2 A, on a conductor layer 200, form a dielectric layer 210.Wherein, the material of conductor layer 200 for example is a copper, be to be formed on the semi-conductive substrate (not illustrating), and in order to substrate on other elements electrically connect.The material of dielectric layer 210 for example is the dielectric material or the fluorine silicon glass of low-k, and the method for formation for example is a chemical vapour deposition technique.Then, form the mask layer 220 of a patterning on dielectric layer 210, the mask layer 220 of this patterning is to expose the part dielectric layer 210 that preboarding becomes irrigation canals and ditches.The material of the mask layer 220 of patterning for example is a silicon nitride, the formation method for example is to utilize photoetching process to form the photoresist layer of patterning earlier on mask layer 220, carry out an anisotropic etching process again and form the mask layer 220 of patterning, and the photoresist layer is removed.
Then, please continue the A with reference to Fig. 2, a treatment step is carried out on dielectric layer 210 surfaces that the mask layer 220 that is patterned is exposed, to form a rete 212, this rete 212 is to avoid the composition ease in the dielectric layer 210 to lose.In addition, the formation of this rete 212 is to form by the dielectric layer 210 that destroys part.The dielectric layer 210 that wrecks can form the rete 212 with porous, and this rete 212 with porous can effectively avoid the composition ease in the dielectric layer 210 to lose.In addition, the thickness of this rete 212 for example is less than 1000 dusts.In one embodiment of the present invention, form the method for rete 212, for example be to carry out an ion implantation technology.Wherein, the employed dopant of ion implantation technology for example is boron, boron fluoride, hydrogen phosphide, arsenic, aluminium or fluorine, and the dosage that is injected is between 10
14To 10
16Between atomicity/square centimeter, the energy that is injected is for example between between the 80KeV to 120KeV.In another preferred embodiment of the present invention, form the method for rete 212, for example be to carry out a gas plasma body technology.Wherein, the employed gas of gas plasma body technology is nitrogen, oxygen or hydrogen for example, and plasma density for example is between 10
-11To 10
-13Between the ions/atoms.
Next, please refer to Fig. 2 B, form the photoresist layer 230 of a patterning on patterned mask layer 220 and the part dielectric layer 210 that comes out, the photoresist layer 230 of this patterning is to expose the predetermined part dielectric layer 210 that forms contact window.Wherein, the formation method of the photoresist layer 230 of patterning for example earlier forms a photo anti-corrosion agent material layer (not illustrating) with method of spin coating, carries out an exposure technology again and a developing process forms.Particularly, because previous form retes 212 on exposed dielectric layer 210 surfaces, so in the process that the photoresist layer 230 of patterning forms, dielectric layer 210 is difficult for having the mistake of material ease.So, in developing process, do not have the incomplete situation of developing and take place.Then, be mask with the photoresist layer 230 of patterning, remove the dielectric layer 210 of the exposure of part, to form a part of contact window 214a, the method that removes for example is an anisotropic etch process.
Afterwards, please refer to Fig. 2 C, remove the photoresist layer 230 of patterning, the method that removes for example is that wet type is delustered and caused the resist method.Then, mask layer 220 with patterning is a mask, the dielectric layer 210 that removes exposure comes out up to conductor layer 200 surfaces, in dielectric layer 210, to form irrigation canals and ditches 216 and a complete contact window 214b, wherein irrigation canals and ditches 216 are positioned at contact window 214 tops, and irrigation canals and ditches 216 are to form an opening 218 with contact window 214b.Wherein, the method that removes the dielectric layer 210 of exposure for example is an anisotropic etch process.Then, remove the mask layer 220 of patterning, the method that removes for example is to carry out wet etching.
＜the second embodiment 〉
Fig. 3 A is the manufacturing process profile that illustrates a kind of opening of second preferred embodiment of the invention to Fig. 3 B.
At first, please refer to Fig. 3 A, on a conductor layer 300, form a dielectric layer 310, and contact window 314 exposes conductor layer 300 surfaces with a contact window 314.Wherein, the material of conductor layer 300 for example is a copper, be to be formed on the semi-conductive substrate (not illustrating), and in order to substrate on other elements electrically connect.In addition, formation has the method for a dielectric layer 310 of a contact window 314, for example be earlier to form dielectric materials layer (not illustrating) with chemical vapour deposition technique, its material for example is the dielectric material or the fluorine silicon glass of low-k, carries out a photoetching process and etch process again to form.
Then, please continue the A with reference to Fig. 3, a treatment step is carried out on exposed dielectric layer 310 surfaces, to form a rete 312, wherein this rete 312 is to avoid the composition ease in the dielectric layer 310 to lose.Characteristic and related process parameter thereof about this rete 312 are similar to the rete 212 of first embodiment, do not repeat them here.
Then, please continue the A with reference to Fig. 3, form the photoresist layer 330 of a patterning on dielectric layer 310, the photoresist layer 330 of this patterning is to expose the part dielectric layer 310 that preboarding becomes irrigation canals and ditches.Wherein, the formation method of the photoresist layer 330 of patterning for example earlier forms a photo anti-corrosion agent material layer (not illustrating) with method of spin coating, carries out an exposure technology again and a developing process forms.Particularly, because previous form retes 312 on exposed dielectric layer 310 surfaces, so in the process that the photoresist layer 330 of patterning forms, dielectric layer 310 is difficult for having the mistake of material ease.So, in developing process, be difficult for having the incomplete situation generation of developing.
Next, please refer to Fig. 3 B, is mask with the photoresist layer 330 of patterning, remove the dielectric layer 310 of exposure, to form irrigation canals and ditches 316, wherein irrigation canals and ditches 316 are to be positioned at contact window 314 tops, and irrigation canals and ditches 316 are formed an opening 318 with contact window 314.Wherein, the method that removes the dielectric layer 310 of exposure for example is an anisotropic etch process.Then, remove the photoresist layer 330 of patterning, the method that removes for example is that wet type is delustered and caused the resist method.
＜the three embodiment 〉
Fig. 4 A is the manufacturing process profile that illustrates a kind of opening of third preferred embodiment of the invention to Fig. 4 B.
At first, please refer to Fig. 4 A, on a conductor layer 400, form a dielectric layer 410 with irrigation canals and ditches 416.Wherein, the material of conductor layer 400 for example is a copper, be to be formed on the semi-conductive substrate (not illustrating), and in order to substrate on other elements electrically connect.In addition, formation has the method for a dielectric layer 410 of irrigation canals and ditches 416, for example be earlier to form a dielectric materials layer (not illustrating) with chemical vapour deposition technique, its material for example is the dielectric material or the fluorine silicon glass of low-k, carries out a photoetching process and etch process again to form.
Then, please continue the A with reference to Fig. 4, a treatment step is carried out on exposed dielectric layer 410 surfaces, to form a rete 412, wherein this rete 412 is to avoid the composition ease in the dielectric layer 410 to lose.Characteristic and related process parameter thereof about this rete 412 are similar to the rete 212 of first embodiment, do not repeat them here.
Then, please continue the A with reference to Fig. 4, form the photoresist layer 430 of a patterning on dielectric layer 410, the photoresist layer 430 of patterning is to expose the predetermined part dielectric layer 410 that forms contact window.Wherein, the formation method of the photoresist layer 430 of patterning for example earlier forms a photo anti-corrosion agent material layer (not illustrating) with method of spin coating, carries out an exposure technology again and a developing process forms.Particularly, because previous form retes 412 on exposed dielectric layer 410 surfaces, so in the process that the photoresist layer 430 of patterning forms, dielectric layer 410 is difficult for having the mistake of material ease.So, in developing process, be difficult for having the incomplete situation generation of developing.
Next, please refer to Fig. 4 B, photoresist layer 430 with patterning is a mask, the dielectric layer 410 that removes exposure is up to exposing conductor layer 400 surfaces, to form a contact window 414, wherein irrigation canals and ditches 416 are to be positioned at contact window 414 tops, and irrigation canals and ditches 416 are formed an opening 418 with contact window 414.Wherein, the method that removes the dielectric layer 410 of exposure for example is an anisotropic etch process.Then, remove the photoresist layer 430 of patterning, the method that removes for example is that wet type is delustered and caused the resist method.
Above-mentioned first embodiment, second embodiment and the 3rd embodiment are the technology that discloses pair of lamina damascene opening, and form a rete 212,312,412 with the minimizing phenomenon of giving vent to anger 210,310,410 of photoresist layer 230,330,430 and dielectric layers by a treatment step.In other preferred embodiment of the present invention, no matter which kind of form formed opening is, be not limited to above-mentioned double-level-metal and inlay opening, as long as on dielectric layer and interface that the photoresist layer contacts, all can utilize method of the present invention in advance prior to forming a rete that can block the phenomenon of giving vent to anger on the dielectric layer, to solve existing problem.
In addition, among above-mentioned several embodiment, be the rete 212,312,412 that has porous media by dielectric layer 210,310,410 being carried out a treatment step, forming, to catch the dielectric material composition that escapes by the phenomenon of giving vent to anger.Therefore, can avoid because of dielectric material and 230,330, the 430 generation reaction of photoresist layer, and the incomplete problem that causes developing.On the other hand, the material of dielectric layer 210,310,410 is the dielectric material of low-k, also can effectively reduce the generation of the parasitic capacitance between the lead.
Fig. 5 A is the manufacturing process profile that illustrates contact hole in one embodiment of the present invention to 5C.
At first, please refer to Fig. 5 A, on a conductor layer 500, form a dielectric layer 510 with an opening 518.In a preferred embodiment, opening 518 is made up of irrigation canals and ditches 516 and a contact window 514, and irrigation canals and ditches 516 are the tops that are positioned at contact window 514.The formation method of this opening 518 for example utilizes above-mentioned first embodiment, second embodiment or the described method of the 3rd embodiment to form.
Then, please refer to Fig. 5 B, a treatment step is carried out on dielectric layer 510 surfaces that exposed by opening 518, to form a rete 512, wherein this rete is to avoid the composition ease in the dielectric layer to lose.In addition, the formation of this rete 512 is to form by the dielectric layer 510 that destroys part.The dielectric layer 510 that wrecks can form the rete 512 with porous, and this rete 512 with porous can effectively avoid the composition ease in the dielectric layer 510 to lose.In addition, the thickness of this rete 512 for example is less than 1000 dusts.In one embodiment of the present invention, form the method for rete 512, for example be to carry out an ion implantation technology.Wherein, the employed dopant of ion implantation technology for example is boron, boron fluoride, hydrogen phosphide, arsenic, aluminium or fluorine, and the dosage that is injected is between 10
14To 10
16Between atomicity/square centimeter, the energy that is injected is for example between between the 80KeV to 120KeV.In another preferred embodiment of the present invention, form the method for rete 512, for example be to carry out a gas plasma body technology.Wherein, the employed gas of gas plasma body technology is nitrogen, oxygen or hydrogen for example, and plasma density for example is between 10
-11To 10
-13Between the ions/atoms.
Then, please continue the B with reference to Fig. 5, form a barrier layer 520 in dielectric layer 510 surfaces, its material for example is titanium or titanium nitride, and the method for formation for example is a chemical vapour deposition technique.Particularly, because previous at exposed dielectric layer 510 surface formation one rete 512, so in the process that barrier layer 520 forms, dielectric layer 510 is difficult for having the material ease to lose.So formed barrier layer 520 is difficult for defectiveness and produces, thereby can improve the reliability of the contact hole of follow-up formation.And, in opening, forming another conductor layer 530, its material for example is copper or tungsten, the method for formation for example is a physical vaporous deposition.
Next, please refer to Fig. 5 C, serves as that the polishing stop layer carries out a flatening process to conductor layer 530 with dielectric layer 510, to form a contact hole 532.Wherein, the flatening process that is carried out for example is a chemical mechanical polishing method.
Be the technology that discloses pair of lamina damascene contact hole in the above-described embodiments, and form a rete 512 with the minimizing phenomenon of giving vent to anger by a treatment step 510 of barrier layer 520 and dielectric layers.In other preferred embodiment of the present invention, no matter which kind of form formed contact hole is, be not limited to above-mentioned double-level-metal inlaid contact window, as long as on dielectric layer and interface that barrier layer contacts, all can utilize method of the present invention in advance prior to forming a rete that can block the phenomenon of giving vent to anger on the dielectric layer, to solve existing problem.
In addition, in the manufacture method of above-mentioned contact hole, by dielectric layer 510 is carried out the structure that a treatment step comes the dielectric layer of deface, and then form rete 512 with porous media.So can catch the dielectric material composition that escapes by the phenomenon of giving vent to anger, and can avoid making barrier layer 520 produce the problem of defectives because of dielectric material and barrier layer 520 produces reaction.
In sum, the present invention has following advantage at least:
1. according to the manufacture method of opening of the present invention, can be by dielectric layer being carried out the dielectric material that the formed rete of a treatment step is caught effusion, and then increase the accuracy of patterns of openings.
2. the manufacture method of split shed of the present invention is to use the dielectric material of low-k, is not easy to produce between the lead parasitic capacitance.
3. utilize the manufacture method of contact hole among the present invention, can effectively prevent to cause the problem of barrier layer generation defective because of the phenomenon of giving vent to anger of dielectric layer.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; any those skilled in the art; under the premise without departing from the spirit and scope of the present invention; can do a little change and retouching, so protection scope of the present invention is as the criterion when looking the claims person of defining.
Claims (10)
1. the manufacture method of an opening comprises:
On a conductor layer, form a dielectric layer;
Form the mask layer of a patterning on this dielectric layer, the mask layer of this patterning exposes this dielectric layer of part that preboarding becomes irrigation canals and ditches;
To being carried out a treatment step by this dielectric layer surface that mask layer exposed of this patterning, to form a rete, wherein this rete is used for avoiding the composition ease of this dielectric layer to lose;
Form the photoresist layer of a patterning on this patterned mask layer and this dielectric layer of part of coming out, the photoresist layer of this patterning exposes predetermined this dielectric layer of part that forms contact window;
Photoresist layer with this patterning is a mask, removes this dielectric layer of the exposure of part, to form a part of contact window;
Remove the photoresist layer of this patterning; And
Mask layer with this patterning is a mask, and this dielectric layer that removes exposure comes out up to this conductor layer surface, and to form irrigation canals and ditches and a complete contact window in this dielectric layer, wherein these irrigation canals and ditches are positioned at this contact window top.
2. the manufacture method of opening as claimed in claim 1, wherein the thickness of this rete is less than 1000 dusts.
3. the manufacture method of opening as claimed in claim 1, wherein this treatment step comprises and carries out an ion implantation technology or a gas plasma body technology.
4. the manufacture method of opening as claimed in claim 3, wherein the dopant that injects of this ion implantation technology comprises boron, boron fluoride, hydrogen phosphide, arsenic, aluminium or fluorine.
5. the manufacture method of opening as claimed in claim 3, wherein the dosage that injects of this ion implantation technology is between 10
14To 10
16Between atomicity/square centimeter.
6. the manufacture method of opening as claimed in claim 3, wherein the energy that injects of this ion implantation technology is between between the 80KeV to 120KeV.
7. the manufacture method of opening as claimed in claim 3, wherein the employed gas of this gas plasma body technology comprises nitrogen, oxygen or hydrogen.
8. the manufacture method of opening as claimed in claim 3, wherein the plasma density of this gas plasma body technology is between 10
-11To 10
-13Between the ions/atoms.
9. the manufacture method of opening as claimed in claim 1, wherein the material of this dielectric layer comprises the dielectric material of low-k.
10. the manufacture method of opening as claimed in claim 9, wherein the dielectric material of this low-k comprises fluorine silicon glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101297158A CN100527363C (en) | 2005-12-01 | 2005-12-01 | Method for making opening and contact window |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101297158A CN100527363C (en) | 2005-12-01 | 2005-12-01 | Method for making opening and contact window |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1979774A CN1979774A (en) | 2007-06-13 |
| CN100527363C true CN100527363C (en) | 2009-08-12 |
Family
ID=38130883
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005101297158A Active CN100527363C (en) | 2005-12-01 | 2005-12-01 | Method for making opening and contact window |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100527363C (en) |
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2005
- 2005-12-01 CN CNB2005101297158A patent/CN100527363C/en active Active
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| Publication number | Publication date |
|---|---|
| CN1979774A (en) | 2007-06-13 |
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