CN100524639C - Substrate processing method, substrate processing apparatus and control program - Google Patents
Substrate processing method, substrate processing apparatus and control program Download PDFInfo
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- CN100524639C CN100524639C CNB200680004278XA CN200680004278A CN100524639C CN 100524639 C CN100524639 C CN 100524639C CN B200680004278X A CNB200680004278X A CN B200680004278XA CN 200680004278 A CN200680004278 A CN 200680004278A CN 100524639 C CN100524639 C CN 100524639C
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Abstract
A substrate processing method is provided with a step (28) for previously covering a front plane of a substrate (W) with water; a step (10) for rotating the substrate (W) within a horizontal plane by holding the substrate substantially horizontal with the front plane on an upper side; and steps (30, 40) for blowing a drying gas flow, which is narrow compared with a surface area of the substrate (W), to the front plane on the upper side of the substrate (W). In the method, water is removed from the substrate front plane by the rotation within the horizontal plane while blowing the drying air flow. The substrate processing method, a substrate processing apparatus for performing such method and a control program to be used in such method and apparatus permit the substrate after cleaning to be dried without locally leaving a water drop.
Description
Technical field
The present invention relates to substrate processing method using same, substrate board treatment and control program, the control program that particularly on the substrates such as semiconductor wafer after the cleaning, does not produce substrate processing method using same, the substrate board treatment of watermark and be used for making substrate cleaning and processing substrate automation.
Background technology
Along with the granular of in recent years semiconductor device etc., on substrate, form the different various material membranes of rerum natura and with its processing.Particularly form in the operation in damascene (damascene) wiring that is formed on the wiring groove on the substrate with the metal landfill; remove unnecessary metal by forming the back with substrate lapping device (CMP) in the damascene wiring; perhaps form the wiring protective layer, have the different film of the wettability to water of metal film, barrier film, dielectric film etc. at substrate surface jointly by plating.In recent years, adopt copper as wiring metal, and, so-called film having low dielectric constant (Low-k film) adopted as dielectric film, because Low-k film is hydrophobic, so enlarged the infiltrating inhomogeneities of substrate surface.
After the wet processed of CMP or plating etc. or the substrate after the back matting of developing procedure, etching work procedure must clean and dehydrate, but when cleaning with CMP and plating etc. to add man-hour different, if use interfacial agent etc. makes the wettability on surface unified forcibly, then can be on substrate residual interfacial agent etc., not preferred.But if still dehydrate under the uneven state of wettability, then water breaks away from from the relatively poor part of wettability earlier, drop is arranged in that the higher part of wettability is residual, in drop and dry, finally produces water stain (watermark) by this part material dissolves.If the generation watermark then can be leaked or becomes bad reason of connecting airtight property etc., can become problem aspect the reliability from this part.
CMP and plating are efficient (for example putting down 4-No. 87638 communiques with reference to real the opening of Japan) because the monolithic processing is a main body so the cleaning-dehydration-drying process of substrate also carries out the monolithic processing.As the dehydrating and drying method after the cleaning of one chip cleaning device following method is arranged; Substrate high speed rotating after making cleaning and make the method for the rotary speed of stage ground control basal plate in the Rotary drying that water droplet disperses, under inert gas environment or under reduced pressure the method for Rotary drying perhaps produces the method for marangoni effect by supply with isopropyl alcohol (IPA) steam etc. in drying.Consideration suppresses the generation of watermark by these methods.
But, in Rotary drying in the method for the rotary speed of control basal plate, in the substrate of the film coexistence that wettability is different as the substrate of the formation damascene wiring that produces hydrophilic portion and hydrophobic portion randomly, according to the difference of the character of the wiring density of substrate and hydrophobic portion and needs carry out the control of meticulous rotary speed, the narrower problem of process window is arranged for production.In addition, the method for Rotary drying needs the more process time of time, needs of adjustments of gas environment under inert gas environment or under the decompression, so and be not suitable for.On the other hand, in the method for supplying with the IPA steam, need vertically keep substrate and carry out pull-up with respect to the monolithic processing unit of CMP etc., it is complicated that conveying mechanism becomes, the integrated difficulty that becomes.In addition, carrying out pull-up needs the time, the problem that has production capacity to reduce.
Summary of the invention
Therefore, the control program that the purpose of this invention is to provide a kind of substrate processing method using same, substrate board treatment and be used for making substrate cleaning and processing substrate automation, no matter to having uneven its size of infiltrating substrate, can both not local residual water droplet and drying substrates after making cleaning, do not produce watermark.
In order to achieve the above object, the substrate processing method using same of embodiments of the present invention (1) is for example shown in Figure 1, possesses: the operation 28 on the surface of water in advance covered substrate W; Is the operation 10 that upside is held in approximate horizontal and rotates in this horizontal plane with substrate W with above-mentioned surface; The jet surface of the upside of substrate W and the surface area of substrate W are compared drying thin with the operation 30,40 of air-flow; On one side jet drying removes from the upper surface of substrate by the rotation in the horizontal plane on one side with air-flow and anhydrates.Here so-called " surface of covered substrate " is to instigate the surface of substrate to be in not and the direct state of contact of atmosphere, typically, the whole surperficial water of substrate covered, that is, water covers whole does not have the part of not soaked into to become.In the operation on the surface of water in advance covered substrate, typically, the surface of substrate upside is spreaded all over whole water cover.In addition, the air-flow of " comparing thinner drying air-flow with the surface area of substrate " and supplying with by nozzle typically.In addition, typically, at least a portion on the surface of substrate W is 30 degree above (with reference to Fig. 2) with respect to the contact angle θ of water.
If constitute like this, then because the surface of water in advance covered substrate, on one side jet drying removes from substrate surface by the rotation in the horizontal plane on one side with air-flow and anhydrates, can not local residual water droplet and substrate after dry the cleaning, do not produce the substrate processing method using same of watermark so become.Here, contact angle is more than 30 degree, and typically is to the maximum below 80 degree.Such surface can possess hydrophilic property and the wettability of hydrophobic centre, is easy to generate water stain (watermark).
In addition, the substrate processing method using same of (2) preferred embodiment of the present invention is in the substrate processing method using same of above-mentioned (1), and the upper surface of aforesaid substrate is made of dielectric film, and at least a portion of the upper surface of aforesaid substrate partly is made of metal film.In addition, the upper surface of the substrate above contact angle of 30 degree typically.
If constitute like this, then partly have in the uneven substrate of wettability of tendency of hydrophobic tendency, metal film part possess hydrophilic property at dielectric film, become the substrate processing method using same that does not produce watermark.
In addition, the substrate processing method using same of another embodiment of the present invention (3) possesses: substrate is implemented planarization or the deposited operation of handling of electroless plating; The operation that aforesaid substrate is held in approximate horizontal and rotates in this horizontal plane; The operation that the upper surface water of having implemented the aforesaid substrate of above-mentioned processing is covered; Upper surface to aforesaid substrate sprays the operation that the drying of comparing thin with the surface area of aforesaid substrate is used air-flow; When spraying above-mentioned drying, remove above-mentioned water from the upper surface of aforesaid substrate by the rotation in the above-mentioned horizontal plane with air-flow.
If constitute like this, then owing to substrate is being implemented the deposited surface of handling back water covered substrate of planarization or electroless plating, on one side jet drying removes from substrate surface by the rotation in the horizontal plane on one side with air-flow and anhydrates, thus become can be with the drying of the not local residual water droplet of the substrate ground after cleaning, do not produce the substrate processing method using same of watermark.Here, to the planarization of substrate typically CMP handle.Implemented that CMP handles or electroless plating to apply the substrate surface handled be surface more than 30 degree having contact angle to water on the part typically.Thereby be easy to generate watermark.
In addition, the substrate processing method using same of (4) preferred embodiment of the present invention is in each the substrate processing method using same, to possess the operation of spraying the drying usefulness air-flow of comparing thin with the surface area of aforesaid substrate to the downside surface of aforesaid substrate in above-mentioned (1)～(3).
If constitute like this, then become and the not local residual water droplet of the downside surface ground drying of the substrate after cleaning can not produced the substrate processing method using same of watermark.
In addition, the substrate processing method using same of (5) preferred embodiment of the present invention is in each the substrate processing method using same, to possess the operation of scrubbing the upper surface of aforesaid substrate before the operation that the upper surface water with aforesaid substrate covers in above-mentioned (1)～(4).
If constitute like this, then can before the surface of water covered substrate, the polluter on the substrate be removed, can reduce the polluter that in drying, becomes the nuclear that drop forms, can reduce resulting from the generation probability of watermark of polluter of substrate surface.
In addition, the substrate processing method using same of (6) preferred embodiment of the present invention is in above-mentioned (1)～(5) in each the substrate processing method using same, and above-mentioned water is the deionized water of having removed dissolved salts and dissolved organic matter at least.
If constitute like this, then since the dissolved salts and the dissolved organic matter of the main cause that will maximize as watermark from water, remove, so can suppress the generation of watermark.
In addition, the substrate processing method using same of (7) preferred embodiment of the present invention is in above-mentioned (1)～(7) in each the substrate processing method using same, and above-mentioned water is the carbon dioxide dissolving water that has dissolved carbon dioxide.
If constitute like this, the conductance of water is risen, even under the situation that produces static on the substrate, also be difficult for charged.And can reduce dissolved oxygen by the dissolving of carbon dioxide.In addition, after the dissolving of carbon dioxide, can suppress the new dissolving of oxygen.
In addition, the substrate processing method using same of (8) preferred embodiment of the present invention is in each the substrate processing method using same, to possess the operation of the above-mentioned water of heating in above-mentioned (1)～(7).
If constitute like this, then water becomes and evaporates easily, can shorten drying time.
In addition, the substrate processing method using same of (9) preferred embodiment of the present invention is in above-mentioned (1)～(8) in each the substrate processing method using same, and above-mentioned dry relative humidity with gas is below 10%.
If constitute like this, then can promote the evaporation of water drying of the gas-liquid interface that the rotation by substrate forms.
In addition, the substrate processing method using same of (10) preferred embodiment of the present invention is in above-mentioned (1)～(9) in each the substrate processing method using same, and above-mentioned gas contains water is solubility, makes the steam of the material that its surface tension reduces when being dissolved in water.
If constitute like this, the surface tension of the gas-liquid interface that the rotation by substrate forms is reduced, water is from the gas-liquid interface part abundant direction that exists of water that furthered, and the mobile of gas-liquid interface becomes easy.
In addition, the substrate processing method using same of (11) preferred embodiment of the present invention is in the substrate processing method using same of above-mentioned (10), and the material liquid before being included in the above-mentioned gas, that its surface tension is reduced is incubated the temperature of stipulating.
If constitute like this, even then when the liquid gasification of the material that its surface tension is reduced, lose the temperature that heat of gasification also can return to regulation, so when being dissolved in water, make the temperature of the liquid of the material that its surface tension reduces can excessive descent, can prevent from when be dissolved in water, to make the material of its surface tension reduction to be included in the minimizing of the amount in the gas.
In addition, the substrate processing method using same of (12) preferred embodiment of the present invention is in above-mentioned (1)～(10) in each the substrate processing method using same, possesses via rotation to keep the maintaining part of substrate W (for example with reference to Fig. 1) to attract the operation of above-mentioned water.
If constitute like this, then by attracting to keep water on the part of substrate attached to rotation, the displacement raising of water and suppress water residual on the substrate, and can prevent dispersing of sealing.And then, compare with the drying of passing through centrifugal force in the past and can prevent following situation: the container inner wall when preventing that the substrate circumference supplied with water energetically, that caused by dispersing of the water that is supplied to or the pollution of lid inwall end, perhaps prevent to collide on the inwall and the pollution again of the upper surface of base plate that causes of rebounding, also have by the pollution again of the water that is supplied to the circuitous lower surface that causes of lower surface of substrate by the water that is supplied to.
In addition, the substrate processing method using same of preferred embodiment (13) of the present invention is for example shown in Figure 1, in each the substrate processing method using same, possesses the operation 44 that attracts above-mentioned water at the circumference of substrate W in above-mentioned (1)～(10).
If constitute like this, then can promote from the eliminating of the water of substrate surface, and can prevent residual at the drop of the circumference of substrate.And then, compare the pollution of container inner wall in the time of can realizing preventing that the substrate circumference supplied with water energetically, that cause by dispersing of the water that is supplied to or lid inwall with the drying of passing through centrifugal force in the past or prevent and collide polluting again, also having of the upper surface of base plate that causes of rebounding on the inwall by the pollution again of the water that is supplied to the circuitous lower surface that causes of lower surface of substrate by the water that is supplied to.
In addition, the substrate processing method using same of (14) preferred embodiment of the present invention is in above-mentioned (1)～(13) in each the substrate processing method using same, said flow constitutes, supply with to the surface of aforesaid substrate above-mentioned dry the time with gas, from the central side of aforesaid substrate to the circumference side shifting.
If constitute like this, the moving of the water that the centrifugal force that then can help the rotation by substrate to produce brings can be finished water mobile towards circumference during not dewatering on the substrate.
In addition, the substrate processing method using same of (15) preferred embodiment of the present invention is in the substrate processing method using same of above-mentioned (10), and said flow is supplied with above-mentioned dry with gas the time to the surface of aforesaid substrate, from the central side of aforesaid substrate to the circumference side shifting; When being dissolved in above-mentioned water, make material that its surface tension reduces amount at above-mentioned gas, big when when above-mentioned drying is positioned at the circumference side of aforesaid substrate with air-flow, being positioned at the central side of aforesaid substrate with air-flow than above-mentioned drying.
If constitute like this, then the surface tension of the water of circumference side further reduces, gas-liquid interface also can still be kept the rotary speed of substrate and make the substrate surface drying even air-flow moves to the circumference side by the strength grow of the abundant direction that exists of the water that further furthered.
In addition, the substrate processing method using same of (16) preferred embodiment of the present invention is in the substrate processing method using same of above-mentioned (14) or (15), by moving of said flow, release the water that covers on the above-mentioned substrate from the central part of aforesaid substrate gradually to the circumference side on one side, from this central part to circumference side gradually make aforesaid substrate drying on one side.
If constitute like this, then under the whole awash state of substrate, substrate begins dry gradually from central division, becomes the substrate processing method using same that does not produce watermark.
In addition, the substrate processing method using same of (17) preferred embodiment of the present invention is in each the substrate processing method using same, to possess in above-mentioned (14)～(16): from the top of aforesaid substrate to the upper surface of aforesaid substrate spray the thin current of comparing with the surface area of aforesaid substrate operation, be that the eject position of above-mentioned current is positioned at than the eject position of the said flow water flow jet operation by the outer radial periphery side; While spraying above-mentioned current, making above-mentioned current along with moving of said flow from the central side of aforesaid substrate operation to the circumference side shifting.
If constitute like this, then the eject position of current is positioned at than the eject position of air-flow by the outer radial periphery side, make along with moving of air-flow current from the central side of substrate to the circumference side shifting, so prior to moving of air-flow current mind-set circumference from substrate is moved, thereby can eliminate the dehydration of the water on the substrate that is pushed out into the substrate outer circumferential side by centrifugal force and air-flow.
In addition, the substrate processing method using same of (18) preferred embodiment of the present invention is in the substrate processing method using same of above-mentioned (17), and the flow of the current that spray to the upper surface of aforesaid substrate is little when being positioned at the central side of aforesaid substrate than above-mentioned current when above-mentioned current are positioned at the circumference side of aforesaid substrate.
If constitute like this, then the water yield of the water of substrate being supplied with in the circumference side of the centrifugal force substrate bigger than the central side of substrate reduces, and can form to prevent that liquid from beating in the water overlay film on substrate surface.
In addition, the substrate processing method using same of (19) preferred embodiment of the present invention is in above-mentioned (14)～(18) in each the substrate processing method using same, and is slow during than the mobile beginning of said flow when mobile the stopping in said flow of the translational speed of the said flow of circumference side from the central side of aforesaid substrate.Here, the speed of when beginning " move " does not comprise the state of " acceleration for just " that reaches the translational speed of regulation from halted state, is the speed that acceleration became 0 o'clock.
If constitute like this, then, can supply with air-flow fully with respect to the area that increases, will remove the substrate that anhydrates along with air-flow moves to peripheral part.
In addition, the substrate processing method using same of (20) preferred embodiment of the present invention, for example shown in Fig. 4 (a), in each the substrate processing method using same, above-mentioned water flow jet position 20 is the positions that are not subjected to the interference of air-flow 30 in above-mentioned (16)～(19).
If constitute like this, the liquid level that then covers the water on the substrate can not upset by air-flow, is difficult for taking place the interruption of the moisture film on the substrate, can suppress the generation of watermark.The position of so-called water flow jet is the position that is not subjected to interference in air flow, is point-symmetric position, promptly leaves the positions of 180 degree mutually with respect to the center (pivot) of substrate typically.
In addition, the substrate processing method using same of (21) preferred embodiment of the present invention is in above-mentioned (1)～(20) in each the substrate processing method using same, the rotary speed of aforesaid substrate be 30rpm above, below the 800rpm.
If constitute like this, then because the rotary speed of substrate is more than the 30rpm, so being used for getting rid of the centrifugal force of water can be sufficient, owing to be below the 800rpm, so do not have the situation that the water droplet that disperses from substrate bounces back into lid or purge chamber's inwall, can prevent to remain in the generation of the watermark that causes on the substrate by water droplet.In addition, have in film forming on the lower surface of substrate under the situation of film of difficult drying of heat oxide film etc., also can be after the drying of the upper surface of substrate, to carry out the drying of reprocessing below the 1000rpm.When reprocessing dry, residual hardly drop on substrate, drop can not become problem from rebounding of cup etc.
In addition, the substrate processing method using same of (22) preferred embodiment of the present invention is in above-mentioned (16)～(21) in each the substrate processing method using same, and the rotary speed of aforesaid substrate is little when being positioned at the central side of aforesaid substrate than above-mentioned current when above-mentioned current are positioned at the circumference side of aforesaid substrate.
If constitute like this, then the rotary speed of substrate diminishes when current are positioned at the circumference side of the centrifugal force substrate bigger than the central side of substrate, can form to prevent that liquid from beating in the water overlay film on substrate surface.
In addition, the substrate processing method using same of (23) preferred embodiment of the present invention is in each the substrate processing method using same, to possess operation from the injection of said flow to the lower surface of aforesaid substrate that supplied with water before in above-mentioned (14)～(22); When said flow moves to the lower surface jet drying gas of aforesaid substrate.
If constitute like this, then since when air-flow moves to the lower surface jet drying gas of substrate, so can shorten, can improve production capacity in order to make the lower surface needed time of drying of substrate.
In addition, the substrate processing method using same of (24) preferred embodiment of the present invention is in each the substrate processing method using same, the rotary speed of aforesaid substrate to be made as the operation of the 1st regulation rotary speed in above-mentioned (17)～(23); The operation that when above-mentioned current arrive the peripheral end of aforesaid substrate, above-mentioned current is stopped; When arriving the peripheral end of aforesaid substrate, said flow stops the operation that moves of said flow; Be positioned under the state of peripheral end of aforesaid substrate the operation that the rotary speed of aforesaid substrate is risen, when the rotary speed of aforesaid substrate arrives than high the 2nd regulation rotary speed of above-mentioned the 1st regulation rotary speed, stop said flow in said flow.
If constitute like this, the rotary speed of substrate is risen, when reaching than high the 2nd regulation rotary speed of the 1st regulation rotary speed, the rotary speed of substrate stops air-flow, do not produce watermark so can make the upper surface of substrate be dried to the peripheral end of substrate, and can prevent the generation of watermark by the central side that centrifugal force stops the water of the periphery remain in substrate or side to enter substrate.
In addition, the substrate processing method using same of (25) preferred embodiment of the present invention is in each the substrate processing method using same, to possess the operation that makes the lower surface drying of aforesaid substrate after removing above-mentioned water from the upper surface of aforesaid substrate in above-mentioned (1)～(24).
If constitute like this, then can with the dry different condition of the upper surface of substrate under carry out the drying of the lower surface of substrate.In addition, typically in the operation of the lower surface drying that makes substrate, also make the side drying of substrate.
In addition, the substrate processing method using same of (26) preferred embodiment of the present invention is in the substrate processing method using same of above-mentioned (25), in the operation of the lower surface drying that makes aforesaid substrate, the rotary speed of aforesaid substrate is changed.
If constitute like this, even, also can increase rotary speed also can drop being dispersed under the residual situation that drop arranged on substrate or the chuck.
In addition, the substrate processing method using same of (27) preferred embodiment of the present invention is in the substrate processing method using same of above-mentioned (26), and the variation of rotary speed that makes aforesaid substrate is with (20 π/3) rad/s
2Following acceleration carries out.
If constitute like this, even, also can increase rotary speed also can drop being dispersed under the residual situation that drop arranged on substrate or the chuck.
In order to achieve the above object, the substrate board treatment of embodiments of the present invention (28) is for example shown in Figure 1, possesses: substrate maintaining part 10 is held in substrate W approximate horizontal and makes its rotation; Top spray nozzle of the gas supply 30 is configured in the top of the substrate W that is kept by substrate maintaining part 10, to the surperficial supply gas of the upside of substrate W; Water supply nozzle 20 is configured in by the top of the substrate W of substrate maintaining part 10 maintenances, is the water supply nozzle 20 of substrate W being supplied with water, the outside of spray nozzle of the gas supply 30 above the footpath of substrate W upwards is configured in; Travel mechanism 21～23,31～33 makes top spray nozzle of the gas supply 30 and the water supply nozzle 20 central part side direction circumference side shifting from substrate W.
If constitute like this, then owing to possess and make top spray nozzle of the gas supply and water supply nozzle travel mechanism from the central part side direction circumference side shifting of substrate, so moving of the water that the centrifugal force that can help the rotation by substrate to produce brings, finish water in during can on substrate, not dewatering towards the moving of circumference, become the substrate board treatment that on substrate, does not produce watermark.
In addition, the substrate board treatment of (29) preferred embodiment of the present invention is in the substrate board treatment of above-mentioned (28), possess thermostat, this thermostat is included in material in the above-mentioned gas, that its surface tension is reduced with the liquid condition storage of set point of temperature as steam.
If constitute like this, even then when the liquid gasification of the material that its surface tension is reduced, lose the temperature that heat of gasification also can revert to regulation, so when being dissolved in water, make the temperature of the liquid of the material that its surface tension reduces can excessive descent, can prevent from when be dissolved in water, to make the material of its surface tension reduction to be included in the minimizing of the amount in the gas.
In addition, the substrate board treatment of preferred embodiment (30) of the present invention is for example shown in Figure 1, in the substrate board treatment 1 of above-mentioned (28) or (29), also possesses the maintaining part attraction portion 16 of attraction attached to the water on the substrate maintaining part 10.
If constitute like this, then can promote from the eliminating of the water of substrate surface.
In addition, the substrate board treatment of preferred embodiment (31) of the present invention is for example shown in Figure 1, in each the substrate board treatment 1, also possesses the periphery attraction portion 44 that attracts above-mentioned water from the circumference of substrate W in above-mentioned (28)～(30).
If constitute like this, then can prevent drop residual of the circumference of substrate.
In addition, the substrate board treatment of preferred embodiment (32) of the present invention is for example shown in Figure 1, in the substrate board treatment 1 of above-mentioned (31), maintaining part attraction portion 16 and periphery attraction portion 44 have the conductive part 18,45 that is formed by conductive material, and conductive part 18,45 is grounded.
If constitute like this, also be difficult for static electrification on substrate even produce in attraction under the situation of static because of the rotation of substrate or water.
In addition, the substrate board treatment of preferred embodiment (33) of the present invention is for example shown in Figure 1, in above-mentioned (28)～(32) in each the substrate board treatment 1, possesses the below that is configured in the substrate W that is kept by substrate maintaining part 10, to the below spray nozzle of the gas supply 40 of the surperficial supply gas of the downside of substrate W; Substrate maintaining part 10 has the roller 11 that contacts with the end of maintained substrate, while roller 11 keeps rotating with contacting around its axle of maintained substrate W.
If constitute like this, then roller always moves with the position that contacts of substrate and changes, and can prevent the pollution that the substrate end is caused by the substrate maintaining part.In addition, owing to possess the below spray nozzle of the gas supply, can prevent to travel back across the pollution again of the base lower surface that base lower surface brings by water.
In addition, the substrate board treatment example of preferred embodiment (34) of the present invention as shown in Figures 7 and 8, in above-mentioned (28)～(32) in each the substrate board treatment, possesses the below that is configured in the substrate W that is kept by the aforesaid substrate maintaining part, to the lower surface spray nozzle of the gas supply 13v of the surperficial supply gas of the downside of substrate W; The aforesaid substrate maintaining part has the chuck jaw 13n that keeps substrate W.
If constitute like this, then owing to the lower surface spray nozzle of the gas supply that possesses the downside surface supply gas of substrate, so can make the downside surface drying of substrate by gas.
In addition, the substrate board treatment example of preferred embodiment (35) of the present invention as shown in Figures 7 and 8, in the substrate board treatment of above-mentioned (34), lower surface spray nozzle of the gas supply 13v is configured in the below of the approximate centre of the substrate W that is kept by chuck jaw 13n, constitute, will be from lower surface spray nozzle of the gas supply 13v gas supplied so that the top be the coniform injection of below.
If constitute like this, then can make the central part of the lower surface that relatively is difficult for dried base plate dry during the upper surface drying that makes substrate, so can shorten the time that needs for the lower surface that makes substrate is dry, can improve production capacity.
In addition, the substrate board treatment of preferred embodiment (36) of the present invention is for example shown in Figure 1, in above-mentioned (28)～(35) in each the substrate board treatment 1, possesses at least a portion of covering maintaining part 10 so that attached to can not disperse lid 17 to maintained substrate W of 10 water on the substrate maintaining part.
If constitute like this, then owing to can not disperse to maintained substrate, so can prevent the generation of the watermark that causes by dispersing of water attached to the water on the substrate maintaining part.
In addition, the substrate board treatment of preferred embodiment (37) of the present invention is Fig. 1 and shown in Figure 7 for example, in each the substrate board treatment 1, possesses in above-mentioned (28)～(36): top flushing water supply nozzle 28, the upper surface of substrate W is supplied with water; Below flushing water supply nozzle 34 (with reference to Fig. 1), 38 (with reference to Fig. 7) supply with water to the lower surface of substrate W.
If constitute like this, then can prevent to be accompanied by the generation that water spots is refuted the watermark of ground evaporation drying with the surperficial water covering of substrate before upper surface that makes substrate and lower surface drying.
In addition, the substrate board treatment of (38) preferred embodiment of the present invention is in the substrate board treatment of above-mentioned (37), and at least 1 of the water that will supply with from above-mentioned water supply nozzle, the water of supplying with from above-mentioned top flushing water supply nozzle and the water supplied with from above-mentioned below flushing water supply nozzle is heated.
If constitute like this, then the evaporation easily because heated water becomes so can shorten the dry required time, can improve production capacity.
In addition, the substrate board treatment of (39) preferred embodiment of the present invention is in the substrate board treatment of above-mentioned (37), and the water of supplying with from above-mentioned below flushing water supply nozzle is heated.
If constitute like this, then, the heated water that is fed into the lower surface of substrate evaporates easily owing to becoming, so can shorten the dry needed time of the lower surface of substrate, can improve production capacity.
In addition, the substrate board treatment of preferred embodiment (40) of the present invention is for example shown in Figure 1, in above-mentioned (28)～(39) in each the substrate board treatment 1, travel mechanism 21～23,31～33 constitutes, when spray nozzle of the gas supply 30 and water supply nozzle 20 are from the central part side direction circumference side shifting of substrate W above making, compare with the speed in mobile when beginning of top spray nozzle of the gas supply 30 and water supply nozzle 20, the translational speed before moving when stopping is slow.Here so-called " translational speed before moving when stopping ", nozzle moves to the peripheral part of substrate and speed during mobile the stopping of nozzle typically.
If constitute like this, then, can supply with air-flow fully for along with the top spray nozzle of the gas supply moves and time per unit will remove the area of the substrate that anhydrates and increases to peripheral part.And then, for along with water supply nozzle moves and time per unit will be supplied with the area of the substrate of water and increases to peripheral part, also can supply with water fully.
In addition, the substrate board treatment of preferred embodiment (41) of the present invention is for example shown in Figure 1, and in each the substrate board treatment 1, the rotary speed of substrate W is more than the 30rpm, below the 800rpm in above-mentioned (28)～(40).
If constitute like this, then because the rotary speed of substrate is more than the 30rpm, so being used for getting rid of the centrifugal force of water can be sufficient, owing to be below the 800rpm, do not collide the situation that lid or purge chamber's inwall rebound so do not have the water droplet that disperses from substrate, can prevent that water droplet from remaining in the generation of the watermark that causes on the substrate.
In addition, the substrate board treatment of preferred embodiment (42) of the present invention is for example shown in Figure 1, in above-mentioned (28)～(41) in each the substrate board treatment 1, possesses control part 48, this control part 48 makes substrate W rotation, so that the rotary speed of the substrate W of the rotary speed of the substrate W of water supply nozzle 20 when being positioned at the circumference side of substrate W when being positioned at the central side of substrate W than water supply nozzle 20 is slow.
If constitute like this, then the rotary speed of substrate diminishes when water supply nozzle is positioned at the circumference side of the centrifugal force substrate bigger than the central side of substrate, can form to prevent that liquid from beating in the water overlay film on substrate surface.In addition, beat,, can reduce the diameter of cup so can reduce the floor space (area is set) of substrate board treatment owing to can prevent liquid.
In addition, the substrate board treatment of preferred embodiment (43) of the present invention is for example shown in Figure 1, in above-mentioned (28)～(42) in each the substrate board treatment 1, possesses control part 48, this control part 48 is regulated the flow of the above-mentioned water of supplying with from 20 couples of substrate W of water supply nozzle, so that the flow of the above-mentioned water that substrate W supplied with of the flow-rate ratio water supply nozzle 20 of the above-mentioned water that substrate W supplied with of water supply nozzle 20 when being positioned at the circumference side of substrate W when being positioned at the central side of substrate W is little.
If constitute like this, then the water yield of the circumference side that is positioned at the centrifugal force substrate bigger than the central side of substrate at water supply nozzle water that substrate is supplied with diminishes, and can form to prevent that liquid from beating in the water overlay film on substrate surface.In addition, beat,, can reduce the diameter of cup so can reduce the floor space (area is set) of substrate board treatment owing to can prevent liquid.
In addition, the substrate board treatment of (44) preferred embodiment of the present invention is in above-mentioned (28)～(43) in each the substrate board treatment 1, possess control part 48 (reference example such as Fig. 1, Fig. 7), spray nozzle of the gas supply 30 (reference example such as Fig. 1 above making, Fig. 7) and water supply nozzle 20 (reference example such as Fig. 1, rotary speed with aforesaid substrate during Fig. 7) from the central part side direction circumference side shifting of substrate is made as the 1st regulation rotary speed, at water supply nozzle 20 (reference example such as Fig. 1, stop from water supply nozzle 20 (reference example such as Fig. 1 when Fig. 7) arriving the peripheral end of aforesaid substrate, the supply of above-mentioned water Fig. 7), spray nozzle of the gas supply 30 (reference example such as Fig. 1 up, when Fig. 7) arriving the peripheral end of aforesaid substrate, stop top spray nozzle of the gas supply 30 (reference example such as Fig. 1, in the time of Fig. 7) mobile, the rotary speed of aforesaid substrate is risen, when the rotary speed of aforesaid substrate arrives the 2nd regulation rotary speed faster than above-mentioned the 1st regulation rotary speed, stop from above spray nozzle of the gas supply 30 (reference example such as Fig. 1, the supply of gas Fig. 7).
If constitute like this, the rotary speed of substrate is risen, when reaching than high the 2nd regulation rotary speed of the 1st regulation rotary speed, the rotary speed of substrate stops air-flow, the upper surface of substrate is dry not to produce watermark so that obtain the peripheral end of substrate so can make, and can prevent the generation of watermark by the central side that centrifugal force stops the water of the periphery that remains in substrate or side to enter substrate.
In addition, the substrate board treatment of preferred embodiment (45) of the present invention is for example shown in Figure 1, in above-mentioned (28)～(44) in each the substrate board treatment 1, possess make substrate W rotary speed with (20 π/3) rad/s
2The control part 48 of following acceleration change.
If constitute like this, then can make drop not change rotary speed with dispersing.
In addition, the lapping device of embodiments of the present invention (46) is for example shown in Figure 10, possesses: grinding unit 110, grind substrate W; Cleaning unit 50,60 is scrubbed or ultrasonic waves for cleaning substrate W; Each substrate board treatment 1 in above-mentioned execution mode (28)～(45).
If constitute like this, then become following lapping device: can before the surface of water covered substrate, remove the polluter on the substrate, can reduce the polluter of the nuclear that in drying, becomes drop formation, the generation probability of the watermark that reduction is caused by the polluter of substrate surface can not produce watermark and forms the damascene wiring on substrate.
In addition, the electroless plating coating apparatus of embodiments of the present invention (47) is for example shown in Figure 14, possesses: electroless plating applies unit 305a, 305b, substrate W is implemented electroless plating apply; Cleaning unit 50,60 is scrubbed or ultrasonic waves for cleaning substrate W; Each substrate board treatment 1 in above-mentioned execution mode (28)～(45).
If constitute like this, then become following electroless plating coating apparatus: can before the surface of water covered substrate, remove the polluter on the substrate, can reduce the polluter of the nuclear that in drying, becomes drop formation, the generation probability of the watermark that reduction is caused by the polluter of substrate surface can not produce watermark and forms the damascene wiring on substrate.
In addition, the substrate board treatment of embodiments of the present invention (48) is for example shown in Figure 1, possesses control system 48, the action that control is following: keep substrate and make the substrate maintaining part 10 of its rotation make substrate W rotation in generally horizontal plane; From the top that is configured in aforesaid substrate respectively and 28,34 couples of substrate W of the flushing water supply nozzle of below supply with water, with the upper surface of this water covered substrate W; Upper surface supply gas from 30 couples of substrate W of top spray nozzle of the gas supply makes top spray nozzle of the gas supply 30 move to peripheral part near the substrate center on one side on one side; Simultaneously, move to than the position of top spray nozzle of the gas supply 30, the water of the upper surface of substrate is removed by the outer radial periphery direction on one side make water supply nozzle 20 supply with water to the upper surface of substrate W on one side.
If constitute like this, then make the top spray nozzle of the gas supply from when peripheral part moves, making water supply nozzle while supplying with the control system that water moves to the action of removing by the position of outer radial periphery direction, with the water of the upper surface of substrate than top spray nozzle of the gas supply near the substrate center owing to possess control, can not residual partly water droplet and carry out drying, can not produce the substrate board treatment of watermark so become for the substrate after cleaning.Under to situation about controlling, become and to prevent that sealing travels back across the pollution and the high-precision substrate board treatment of the base lower surface that the lower surface of substrate brings near the action of the water of the lower surface of below peripheral part moves, removing substrate the substrate center in the spray nozzle of the gas supply.
In order to achieve the above object, the control program of embodiments of the present invention (49), be installed in computer that substrate board treatment is connected in, this substrate board treatment of this computer control, the substrate board treatment of the substrate processing method using same that possesses following operation is used in this control program control: substrate is implemented planarization or the deposited operation of handling of electroless plating; The operation that aforesaid substrate is held in approximate horizontal and rotates in this horizontal plane; The operation that the upper surface water of having implemented the aforesaid substrate of above-mentioned processing is covered; Upper surface to aforesaid substrate sprays the operation that the drying of comparing thin with the surface area of aforesaid substrate is used air-flow; When spraying above-mentioned drying, remove above-mentioned water from the upper surface of aforesaid substrate by the rotation in the above-mentioned horizontal plane with air-flow.
If constitute like this, then become and to be applicable to and not produce watermark and the control program of the substrate board treatment of clean substrate.
In addition, the control program of embodiments of the present invention (50), be installed in computer that substrate board treatment is connected in, this substrate board treatment of this computer control, this substrate board treatment uses the substrate processing method using same that possesses following operation: the operation that aforesaid substrate is held in approximate horizontal, it is rotated in this horizontal plane; Spray the operation of thin drying of comparing with the surface area of aforesaid substrate from the top of aforesaid substrate to the upper surface of aforesaid substrate with air-flow and current, that is, Yi Bian keep said flow and above-mentioned current and make progress in the footpath of aforesaid substrate and make it when above-mentioned current are positioned at the outside than said flow from the central side of aforesaid substrate operation to the circumference side shifting.
If constitute like this, then become and to be applicable to and not produce watermark and the control program of the substrate board treatment of clean substrate.
In addition, the control program of embodiments of the present invention (51), be installed in computer that substrate board treatment is connected in, this substrate board treatment of this computer control, this substrate board treatment uses the substrate processing method using same that possesses following operation: the operation that aforesaid substrate is held in approximate horizontal, it is rotated in this horizontal plane; The operation that the upper surface water of aforesaid substrate is covered; The operation that the thin drying of will comparing with the surface area of aforesaid substrate is sprayed, will be sprayed with the upper surface that the surface area of aforesaid substrate compares the current direction aforesaid substrate thin to the upper surface of aforesaid substrate with air-flow, promptly, when the footpath of aforesaid substrate is upwards kept above-mentioned current and is positioned at the outside of the air-flow that above-mentioned upper surface is sprayed, make air-flow that above-mentioned upper surface is sprayed and above-mentioned current from the central side of aforesaid substrate to circumference side shifting, the operation of on one side water of the upper surface of aforesaid substrate being removed.
If constitute like this, then become the control program that can be applicable to the substrate board treatment that does not produce watermark and can the clean substrate.In addition, also awash at upper surface, lower surface with substrate, on one side jet drying with air-flow, make under the dry situation of the water of the lower surface of substrate being removed to circumference side shifting one side from the central side of substrate with air-flow, can also prevent that sealing travels back across the pollution again of the base lower surface that base lower surface brings.
In addition, the control program of (52) preferred embodiment of the present invention is in the control program of above-mentioned (50) or (51), be installed in computer that substrate board treatment is connected in, this substrate board treatment of this computer control, this control program carries out in the following control: the little control of rotary speed of the aforesaid substrate the when rotary speed of the aforesaid substrate when making above-mentioned current be positioned at the circumference side of aforesaid substrate is positioned at the central side of aforesaid substrate than above-mentioned current, and the little control of flow of the above-mentioned current of the above-mentioned current of flow-rate ratio of the above-mentioned current when making above-mentioned current be positioned at the circumference side of aforesaid substrate when being positioned at the central side of aforesaid substrate.
If constitute like this, then under the situation of the rotary speed of control basal plate, the rotary speed of substrate diminishes when water supply nozzle is positioned at the circumference side of the centrifugal force substrate bigger than the central side of substrate, can form to prevent that liquid from beating in the water overlay film on substrate surface.In addition, under the situation of the flow of controlled water flow, the water yield of the water of substrate being supplied with in the circumference side of the centrifugal force substrate bigger than substrate center side tails off, and prevents that liquid from beating in the water overlay film so can form on substrate surface.
In addition, the control program of (53) preferred embodiment of the present invention is in above-mentioned (50)～(52) in each the control program, carry out before the injection of said flow lower surface to aforesaid substrate supply with water, when said flow moves to the control of the lower surface jet drying of aforesaid substrate with gas.
If constitute like this, then since when air-flow moves to the lower surface jet drying gas of substrate, so can shorten the required time of lower surface drying that is used to make substrate, can improve production capacity.
In addition, the control program of (54) preferred embodiment of the present invention is in above-mentioned (50)～(53) in each the control program, carry out following control: the rotary speed with aforesaid substrate when making said flow and above-mentioned current from the central part side direction circumference side shifting of aforesaid substrate is made as the 1st regulation rotary speed, when arriving the peripheral end of aforesaid substrate, above-mentioned current stop above-mentioned current, when said flow arrives the peripheral end of aforesaid substrate, rise while the mobile rotary speed of aforesaid substrate that makes that stops said flow, when the rotary speed of aforesaid substrate arrives than fast the 2nd regulation rotary speed of above-mentioned the 1st regulation rotary speed, stop said flow.
If constitute like this, the rotary speed of substrate is risen, when reaching than high the 2nd regulation rotary speed of the 1st regulation rotary speed, the rotary speed of substrate stops air-flow, do not produce watermark so can make the upper surface of substrate be dried to the peripheral end of substrate, and can prevent the generation of watermark by the central side that centrifugal force stops the water of the periphery remain in substrate or side to enter into substrate.
In addition, the control program of (55) preferred embodiment of the present invention is in each the control program, to possess the operation that makes the lower surface drying of aforesaid substrate after removing above-mentioned water from the upper surface of aforesaid substrate in above-mentioned (49)～(54); In the operation of the lower surface drying that makes aforesaid substrate, the rotary speed that makes aforesaid substrate is with (20 π/3) rad/s
2Following acceleration change.
If constitute like this,, drop is dispersed and can increase rotary speed even then under the residual situation that drop arranged on the substrate.
In addition, the manufacture method of the semiconductor device of (56) preferred embodiment of the present invention possesses: by the operation of each substrate processing method using same cleaning base plate in above-mentioned (1)～(27); On aforesaid substrate, form the operation of semiconductor device.
If constitute like this, then can use the substrate that does not have watermark to form semiconductor device.
The present invention is based on that the spy who files an application on February 7th, 2005 in Japan is willing to 2005-No. 031170 and the spy that files an application on October 7th, 2005 is willing to that its content forms its part as the application's content 2005-No. 295744.
In addition, the present invention should be able to understand more completely by following detailed explanation.More applications scope of the present invention will become clear by following detailed explanation.But detailed explanation and specific example are preferred embodiment of the present invention, just put down in writing for illustrative purposes.This is because according to this detailed explanation, in purport of the present invention and technical scope, various changes, change are very clearly for a person skilled in the art.
The applicant is not that any of execution mode that intention will record presented to the public, and technology in disclosed change, the alternative scheme, that might not comprise on the literal in claims is also as the part of the invention under the doctrine of equivalents.
In the record of this specification or claims, the short of special instructions of use of noun and same deictic word or short ofly by the front and back logic negate clearly all should be interpreted as comprising single and a plurality of both.The use of the illustration of any that provides or exemplary term (for example " etc. ") is also only for explanation the present invention easily in this manual, and short of being documented in especially in claims just do not limited scope of the present invention.
According to the present invention, because the contact angle that water in advance covers water is the surface of the above substrate of 30 degree, on one side jet drying removes from substrate surface by the rotation in the horizontal plane on one side with air-flow and anhydrates, thus become can be on the substrate after the cleaning not residual partly water droplet and make drying substrates, can not produce the substrate processing method using same of watermark.
In addition, possess make above spray nozzle of the gas supply and water supply nozzle under the situation of the travel mechanism of the central part side direction circumference side shifting of substrate, moving of the water that the centrifugal force that can help the rotation by substrate to produce brings, so that on substrate, can not dewater, can during not dewatering, finish water moving by sustainable supply water energetically towards circumference.Therefore, centrifugal force at the peripheral part of substrate surpasses under the situation of the such rotating speed of surface tension, can solve especially at substrate size is the problem of the generation water droplet that causes of the interruption of the liquid film of incidental substrate peripheral part under the situation more than the 200mm, becomes the substrate board treatment that can not produce watermark on substrate.
Description of drawings
Fig. 1 is the figure of the substrate board treatment of the relevant embodiments of the present invention of explanation, and Fig. 1 (a) is a schematic isometric, and Fig. 1 (b) and Fig. 1 (c) are the phantoms of substrate maintaining part.
Fig. 2 is the schematic diagram of explanation substrate to the contact angle of water.
Fig. 3 is the roller part details drawing on every side of explanation substrate maintaining part.
Fig. 4 is the position relation of explanation water supply nozzle and top spray nozzle of the gas supply and the figure of track separately, and Fig. 4 (a) represents self, and Fig. 4 (b) expression is one-piece type.
Fig. 5 (a) is the curve chart of relation of the position of expression flow of water and current, and Fig. 5 (b) is the curve chart of relation of the position of the rotary speed of expression substrate and current.
Fig. 6 is the curve chart of quantity delivered with the relation of dry position with air-flow of the expression steam that makes the material that surface tension reduces.
Fig. 7 is the schematic isometric of substrate board treatment of the variation of the relevant embodiments of the present invention of explanation.
Fig. 8 is the part details drawing of variation of rotating chuck mechanism of substrate board treatment of the variation of the relevant embodiments of the present invention of explanation, and Fig. 8 (a) is a vertical view, and Fig. 8 (b) is B-B cutaway view of Fig. 8 (a).
The rotary speed of the substrate when Fig. 9 is expression base lower surface drying and the curve chart of the relation in elapsed time.
Figure 10 is the diagrammatic top view that possesses the lapping device of substrate board treatment.
Figure 11 be the expression lapping device cleaning part the inside details want portion's stereogram.
Figure 12 is the schematic isometric that the expression roller is scrubbed the unit.
Figure 13 is the schematic isometric that the expression brush is washed the unit.
Figure 14 is the diagrammatic top view that possesses the electroless plating coating apparatus of substrate board treatment.
Label declaration
1 substrate board treatment
2 lapping devices
3 electroless plating coating apparatus
10 substrate maintaining parts
11 rollers
16 maintaining part attraction portions
17 lids
18,45 conductive parts
20 water supply nozzles
21,31 swing arms
22,32 driving shafts
23,33 drive sources
30 top spray nozzle of the gas supply
40 below spray nozzle of the gas supply
44 periphery attraction portions
48 control parts
50 rollers are scrubbed the unit
60 brushes are washed the unit
110 grinding units
305a, 305b electroless plating apply the unit
The W substrate
Embodiment
Below, with reference to accompanying drawing embodiments of the present invention are described.In addition, give identical label or similar label for identical or suitable parts in each figure, the repetitive description thereof will be omitted.
Fig. 1 (a) is the schematic isometric of the substrate board treatment 1 of relevant embodiments of the present invention.Substrate board treatment 1 comprises the substrate maintaining part 10 that keeps substrate W (illustrating with double dot dash line) and make its rotation in Fig. 1 (a), the upper surface of substrate W is supplied with the water supply nozzle 20 of the water that cleans usefulness and the fixedly flooding nozzle 28 of upper surface of conduct flushing water supply nozzle, the upper surface of substrate W is supplied with the top spray nozzle of the gas supply 30 of desiccant gas, the lower surface of substrate W is supplied with the lower surface porous flooding nozzle 34 of the conduct flushing water supply nozzle of the water that cleans usefulness, the lower surface of substrate W is supplied with the below spray nozzle of the gas supply 40 of desiccant gas, attraction is attached to the maintaining part attraction portion 14 of the water on the substrate maintaining part 10, attract the periphery attraction portion 44 of water from the circumference of substrate W, with control these parts action control part 48 and constitute.
Here, before the more detailed description of carrying out substrate board treatment 1, the typical substrate W that is cleaned by this substrate board treatment 1 is described.
Substrate W is formed with the damascene wiring.So-called damascene wiring is the wiring groove that forms predetermined pattern on the substrate that is covered by dielectric film, and the wiring that forms with this wiring groove of metal landfill.In recent years, generally adopt copper or its alloy, and adopt film having low dielectric constant (Low-k film), such wiring is called Cu/Low-k wiring as dielectric film as wiring metal.Cu/Low-k wiring has generally that the copper part is infiltrated on water (hydrophily) easily, the low-k membrane portions is the characteristic of water repellency (hydrophobicity).Substrate W is owing to forming hydrophilic portion and hydrophobic portion randomly, so wettability is inhomogeneous on wiring side.In addition, present inventors find, though so-called film having low dielectric constant self is at least more than 60 degree the contact angle of water, if but the film of cutting that carries out CMP etc. in order to form wiring is handled, then the part of the chemical bond that presents hydrophobic part of C-H base etc. is cut off and is changed to hydrophilic group, and the contact angle of the film having low dielectric constant after the processing is reduced to about original half.And then, based on this situation, find that, maximum 80 above at least 30 degree for the contact angle of water with the dielectric film part of Cu/Low-when k wiring be object spent more than.And, recognize in such contact angle to water is the part of 30 degree～80 degree degree to be easy to generate the situation of water stain (watermark).The face of such contact angle can be described as infiltrating with hydrophobicity and hydrophilic centre, is easy to generate watermark.
With reference to the contact angle of Fig. 2 explanation to water.Here said contact angle to water is the angle of face with the gas-liquid interface that contacts with this face of substrate W, and the θ among Fig. 2 is corresponding to this.The wettability (infiltration easness) on surface is estimated with contact angle θ.That is, the easy more infiltration of the face that contact angle θ is more little (hydrophily is higher), big more face is difficult to soak into (hydrophobicity is higher) more.
Here, carry out the more detailed description of substrate board treatment 1 according to Fig. 1.
Substrate maintaining part 10 possesses the roller 11 (with reference to Fig. 3) of the clamp portion 12 with the end that keeps substrate W.The substrate board treatment 1 of present embodiment possesses 4 substrate maintaining part 10A, 10B, 10C, 10D, as long as but can suitably keep substrate W, be not limited to 4, also can be more than 3.Under 3 situation, each roller is difficult for disturbing, and has good stability.Under the situation more than 4, because by many somes supporting substrates on the periphery, so even on substrate, apply bigger external force, the problem on the intensity of also difficult generation substrate.Particularly preferably be 4～6 degree.In addition, substrate maintaining part 10A～10D has identical structure, the needs additional symbols they the time show as substrate maintaining part 10A ..., when carrying out common respectively explanation, only show as substrate maintaining part 10.Substrate W is held in approximate horizontal by substrate maintaining part 10A～10D.The clamp portion 12 of substrate maintaining part 10 contacts with the end of substrate W with the pushing force towards the regulation of the approximate centre direction of substrate W, with the identical rotary speed of regulation and to the equidirectional rotation, the friction by substrate maintaining part 10 and the end of substrate W keeps when substrate W is applied revolving force the roller 11 that makes all substrate maintaining parts 10 by not shown rotary drive mechanism around it.As long as can make substrate W rotation, also can only rotate at least one that drives among all substrate maintaining part 10A～10D.As the material of the roller 11 here, using chemical sproof fluorine-type resin is PVDF.And then, under the situation of any number,, all when keeping, make the direction of the confining force of all rollers become direction towards substrate center as long as the dismounting of substrate is no problem.
Illustrate around the roller 11 with reference to Fig. 3.Fig. 3 is the roller partial detailed figure on every side of explanation substrate maintaining part.Near the clamp portion 12 of roller 11, be provided with the maintaining part attraction portion 14 of attraction attached to the water on the substrate maintaining part 10.The maintaining part that disposes the attraction mouth 15 that possesses the fluid that attracts liquid etc. in maintaining part attraction portion 14 attracts mouth 16.Here, attract mouthfuls 15 for example to be configured to attract attached to the fluid in the clamp portion 12 to approach clamp portion 12 below the 5mm.Attract mouth 15 to be connected with attracting pipe arrangement 27.Attract pipe arrangement 27 to be communicated to vacuum source (not shown), attract water by vacuum attraction via gas-liquid separation device (not shown).As vacuum source, use injector (ejector), vacuum pump etc.In addition, maintaining part attracts mouth 16 to possess the conductive part 18 that is formed by conductive material.This conductive part 18 is positioned at the front end that maintaining part attracts mouth 16, via wiring 19 ground connection (earth connection).In addition, in the present embodiment, only maintaining part attracts the part of mouth 16 to be formed by conductive material, but also maintaining part can be attracted mouth 16 integral body to form with conductive material.In addition, just passable as long as 4 maintaining parts attract in the mouths 16 at least one to have a conductive part 18.And then, on the top of substrate maintaining part 10, be provided with and be used for preventing the lid 17 that disperses to the surface of substrate W attached to the water on the substrate maintaining part 10, thereby wrap into the upper end (with reference to Fig. 1) that covers roller 11.As its details of expression among Fig. 1 (b), lid 17 is constituted by otch, so that do not contact with substrate W.That is, lid 17 is arranged on and clips on roller 11 and the opposed direction of substrate W or top, so that water droplet can not disperse.Perhaps, shown in Fig. 1 (c), also can constitute the top of the top of roller 11 and substrate W lid 17a as opening.Maintaining part attraction mouth 16 is arranged on and clips on roller 11 and the opposed position of substrate W, so that its perforation covers 17.Substrate maintaining part 10, maintaining part attraction portion 14, lid 17 are fixed in the not shown maintaining part travel mechanism.Undertaken that along continuous straight runs leaves from the center of substrate and approaching advance and retreat action by maintaining part travel mechanism, keep substrate W or remove keeping.
Get back to Fig. 1 once more, continue the explanation of substrate board treatment 1.Water supply nozzle 20 is configured in the top that is held in the substrate W of approximate horizontal by substrate maintaining part 10.Supply with water from water supply nozzle 20 to the central portion of the upper surface of substrate W.The angle configurations that water supply nozzle 20 is spent with 60 degree～90 with respect to the surface of substrate W.Supply with water in order substrate not to be impacted with low flow velocity, the aperture of water supply nozzle 20 is preferably more than the 1mm.In addition, for fear of the glut of water, the aperture is preferably below the 6mm.In the present embodiment, the aperture of water supply nozzle 20 is 2mm.By such nozzle, can spray with the surface area of the substrate of diameter 200～300mm and compare thinner current.
The water of supplying with from water supply nozzle 20 is pure water typically, and, can use the alcohols, organic solvent of the deionized water of having removed dissolved salts and dissolved organic matter, carbon dioxide dissolving water, (hydrogen water or electrolytic ionic water etc.) function water or IPA etc. etc. according to purpose.If use the water that contains dissolved salts and dissolved organic matter, then the size of watermark becomes summary rising big, reliability decrease.Thereby, use the water that does not contain impurity better.As the method for removing the dissolved salts in anhydrating, can use reverse osmosis membrane, ion-exchange etc., as the method for removing dissolved organic matter, can use reverse osmosis membrane, super filter membrane method, UV decomposition method etc.In addition, if use carbon dioxide dissolving water, then can improve the conductance of substrate W.And then carbon dioxide is evicted dissolved oxygen from, and can suppress new dissolved oxygen.Owing to be easy to generate the wettability relatively poor (having hydrophobic tendency) of the film having low dielectric constant of watermark, so if get rid of by rotation and to anhydrate, then be easy to generate static, if base plate strip static then adheres to foreign matter etc. easily.The conductivity that charged reason takes place is deionized water is lower, so preferably as the method that does not increase dissolved salts and dissolved organic matter, use the dissolving of the carbon dioxide that improves conductance.The dissolving of carbon dioxide generally is via the method for gas dissolving film to deionized water side dissolved under pressure carbon dioxide, but, at this moment, if remove dissolved oxygen and dissolved nitrogen by degassing film in advance as far as possible, then dissolved efficiency significantly improves, so more preferred.In addition,, then produce carbon dioxide and hydrogen, also it can be used under this purpose as secondary product if decompose dissolved organic matter by the UV method.In this manual, except the situation that special difference is used, " water " is except pure water and deionized water, also comprise the notion of the so-called aqueous solution of mixture etc. of alcohols, organic solvent, these alcohols and the pure water of carbon dioxide dissolving water, (hydrogen water or electrolytic ionic water etc.) function water or IPA etc.
The water of supplying with from water supply nozzle 20 also can according to the kind of substrate W and be formed on structure, the ejection water of the wiring pattern on the substrate W angle, place each condition that the gaseous environment (temperature, pressure, cleannes etc.) of substrate board treatment 1 waits, selection is optimal among the alcohols of pure water, deionized water, carbon dioxide dissolving water, (hydrogen water or electrolytic ionic water etc.) function water or IPA etc., the organic solvent etc.Such selection typically is responsible for by control part 48.In addition, under the situation of the liquid that the wettability to substrate is higher, volatility is higher that uses alcohols or organic solvent etc., can easily on substrate, form thin liquid film with low discharge, and can shorten the drying time of substrate.In addition, as the liquid of supplying with from water supply nozzle 20, also can be to have made the above-mentioned alcohols of the ratio of stipulating and the mixture of pure water.In the case, can reduce the use amount of alcohol, thereby also can reduce the operating cost of processing.In addition, the flow of the water of supplying with from water supply nozzle 20 can change.The variation of the flow of the water of supplying with from water supply nozzle 20 typically is responsible for by control part 48.
In addition, the water of supplying with from water supply nozzle 20 can be heated to more than the room temperature, less than the boiling point of water, for example more than 25 ℃, below 65 ℃, is preferably more than 30 ℃, below 60 ℃.By water is heated, carry out drying easily, can increase the swing speed of top described later spray nozzle of the gas supply 30, can shorten the drying time of substrate.On the other hand, the viewpoint that contacts with water from the alcohols that can make IPA etc. preferably is made as below 65 ℃.Typically water is heated, but also can make water pass through other heater that is provided with or heat exchanger, the water after the temperature rising is imported water supply nozzle 20 by the heater on every side that is located at the pipe arrangement (not shown) that is connected with water supply nozzle 20.In addition, near substrate W, be equipped with upper surface with fixing flooding nozzle 28, can be to the water that the upper surface of substrate W is supplied with and water supply nozzle 20 is same.In addition, also can similarly be heated from the water of upper surface with the water of supplying with from water supply nozzle 20 with fixedly flooding nozzle 28 supplies.
Top spray nozzle of the gas supply 30 is configured in the top that is held in the substrate W of approximate horizontal by substrate maintaining part 10, can spray and compare enough thin drying air-flow with the surface area of substrate W.As the aperture of top spray nozzle of the gas supply 30, if flow velocity is excessive, then liquid can disperse, so be preferably more than the 1mm; If flow velocity is too small, then water is removed scarce capacity, so be preferably below the 4mm.So-called " comparing with the surface area of substrate W; enough thin drying air-flow ", be air-flow during vertically with the real estate collision of the awash level of integral body on the periphery of air-flow the air-flow of the degree of residual concentrically ringed water, the tiny degree of supplying with by nozzle typically.Different with thick situation, do not need excessive gas and can get rid of the water of upper surface of base plate with suitable intensity.In addition, can not bring excessive power to substrate yet.By the drying gas that blows out from such top spray nozzle of the gas supply 30, get rid of the water of the upper surface of substrate W, make the upper surface drying of substrate W.In addition, make near the central authorities of substrate W under the dry situation, if supply gas with respect to substrate W incident obliquely, then the central peripheral of substrate W is than central authorities' drying earlier, the water of central authorities that remains in substrate W might produce watermark attached in the arid region.In addition, under the situation of oblique incidence, the collision expanded range of gas, the problem that has drying power to reduce.Thereby it is vertical being preferably with respect to substrate W to the gas direction of the supply of substrate W.Therefore, top spray nozzle of the gas supply 30 vertically disposes with respect to substrate W.Thus, vertically supply with drying gas respectively from 30 pairs of real estates of top spray nozzle of the gas supply.In addition, 1 typically in the air-flow that blows out from top spray nozzle of the gas supply 30, but also can be a plurality of.
The gas that blows out from top spray nozzle of the gas supply 30 is the inert gas of nitrogen etc. typically.If use air as the gas that blows out from top spray nozzle of the gas supply 30, then cost is low just much of that, but needs to use chemical filter etc. in advance the polluter of solid, gas, vaporous to be removed in the case.But if use inert gas, then the possibility of substrate surface oxidation reduces, and brings dysgenic possibility to reduce to next operation, so preferably use inert gas.Inert gas is nitrogen (N typically
2), but also can be carbon dioxide, can also be the inert gas of argon gas etc.When using nitrogen, obtain easily, handle and be easier to.And owing to be a kind of composition in the atmosphere, so do not need special subsequent treatment.In addition, quantity delivered as gas, need enough auxiliary centrifugal force and get rid of water to periphery from substrate center, under the situation of " self " described later, because the rotating speed of substrate is below the 100rpm, the effect of centrifugal force is less, thus particularly can be made as 5L/min above, be preferably 10L/min above, more preferably more than the 50L/min.Under the situation of " one-piece type " described later, because the rotating speed of substrate is more than the 100rpm, the effect of centrifugal force is bigger, thus particularly can be made as 1L/min above, be preferably more than the 3L/min.In addition, the pressure of the gas that blows out from top spray nozzle of the gas supply 30 is preferably 5～350kPa.In addition, the gas that blows out from top spray nozzle of the gas supply 30 is preferably relative humidity below 10%.This be because, dry stronger towards the effect that circumference moves with gas growth encourage water, if and the relative humidity that makes gas is reduced to below 10%, then can promote the evaporation of water drying at the gas-liquid interface place that the rotation by substrate W forms, can carry out gas-liquid interface moving more efficiently towards circumference.
In addition, the gas that blows out from top spray nozzle of the gas supply 30 also can contain the steam of the material that makes its surface tension reduction when being dissolved in water.Comprise the steam that when being dissolved in water, makes the material that its surface tension reduces in gas in drying, if it is supplied to the gas-liquid interface that the rotation by substrate W forms, the substance dissolves that then makes the surface tension reduction can make the surface tension of the part of dissolving reduce in the water of interface portion.If the surface tension of interface portion reduces, then the surface tension of the water of the part (part of a large amount of (bu1k)) that exists galore of water raises, and a large amount of sides that furthered can be carried out the moving towards circumference at interface more efficiently.Material as its surface tension is reduced for example has isopropyl alcohol, two acetone, ethohexadiol, ethyl acetate, the such hydrophilic solvent of methyl pyrrolidone or their mixture.According to the kind of substrate W and be formed on the structure of the wiring pattern on the substrate W, each condition of placing the gaseous environment (temperature, pressure, cleannes etc.) etc. of substrate board treatment 1, the gas that blows out from top spray nozzle of the gas supply 30 also can contain the steam of the alcohol of nitrogen and inert gas, the air of having removed polluter, IPA etc. or organic solvent or suitably regulate their relative humidity by heating target gas etc., maybe makes the steam of the material that its surface tension reduces when being dissolved in water, and is optimal from wherein selecting.Such selection typically is responsible for by control part 48.
From above contain the gas that blows out of spray nozzle of the gas supply 30 under the situation of the steam that when being dissolved in water, makes the material that its surface tension reduces, be included in material before the gas, that its surface tension is reduced and typically be stored in the thermostat with the state of liquid.Thermostat is to be the container of the temperature of regulation with the liquid-retentive that is stored in the inside.At gas is nitrogen (N
2), material that its surface tension is reduced is under the situation of isopropyl alcohol (IPA), for example IPA is stored in the thermostat cylindraceous that the metal by stainless steel etc. constitutes with airtight state.And, on the upper surface of thermostat cylindraceous, be through with and make N
2Gas flows into the inflow pipe in the thermostat and will contain the N of IPA steam
2Gas delivery line of spray nozzle of the gas supply 30 guiding upward in the thermostat.The IPA of liquid submerges in the end that is arranged in the inflow pipe of thermostat.On the other hand, the end that is positioned at the delivery line of thermostat is positioned at than liquid IPA leans on the top, gassiness part, among the IPA of the liquid that do not submerge.In addition, in thermostat, be provided with and be used for the liquid level of the IPA liquid in the thermostat is kept liquid level sensor within the limits prescribed, contact.Liquid level sensor detects a high position and the low level of the IPA liquid in the thermostat, starts pump when detecting low level IPA liquid is supplied in the thermostat, stops pump and stop the supply of IPA liquid in thermostat when detecting a high position.In addition, in thermostat, in order to prevent because of supplying to the N in the IPA liquid
2The misoperation of the liquid level sensor that the bubble of gas causes preferably sets the next door cylindraceous of both ends open so that it surrounds inflow pipe.Next door cylindraceous typically set into, its axle with thermostat is parallel, and surrounds the end of the inflow pipe in the thermostat and the end of delivery line.From N
2The bubble of gas does not arrive the such purport that next door cylindraceous is set of liquid level sensor and sets out, and liquid level sensor is configured in the outside in next door cylindraceous.In addition, also can be configured to, surround, make inflow pipe to be positioned at the outside in next door cylindraceous with next door cylindraceous liquid level sensor.
In addition, thermostat stores the thermostatted water covering of the part of IPA liquid with set point of temperature for the temperature of IPA liquid insulation for regulation to the major general.If the heat of gasification when becoming the IPA steam because of IPA liquid reduces the temperature of IPA liquid, then the saturated vapour pressure of IPA reduces, and the saturated concentration of IPA reduces, and is included in N
2The amount of the steam of the IPA in the gas reduces.In order to prevent this situation, the thermostat that stores the part of IPA liquid to the major general uses the thermostatted water of set point of temperature to cover.In order to be the temperature of regulation with the insulation of the IPA liquid in the thermostat, thermostat is typically surrounded by the water jacket of alms bowl shape.In water jacket, be provided with the thermostatted water ingress pipe that imports thermostatted water in the bottom, be provided with the thermostatted water delivery line of deriving thermostatted water on top with thermostatted water ingress pipe opposition side.Flow through in the water jacket by the thermostatted water that makes set point of temperature, with the temperature of water sleeve IPA liquid-retentive for regulation.For example, be that 20 ℃ thermostatted water is fed in the water jacket under 20 ℃ the situation with the IPA liquid-retentive.
For from above the N that blows out of spray nozzle of the gas supply 30
2Contain the IPA steam in the gas, with N
2Gas is blown into the IPA liquid from inflow pipe and foams.So the IPA steam is at N
2Saturated in the gas, accumulate in than IPA liquid and lean in the thermostat of top, by delivery line it is derived and spray nozzle of the gas supply 30 guidings upward from thermostat.The N of adjusting to blowing out from top spray nozzle of the gas supply 30
2The amount of the IPA steam in the gas, the typically N of the IPA saturated with vapor by spray nozzle of the gas supply above being guided 30
2Sneak into N from other circuit in the gas
2Gas dilutes to be realized.
Fig. 4 is the figure of track of the position relation of explanation water supply nozzle 20 and top spray nozzle of the gas supply 30, and Fig. 4 (a) represent self, and Fig. 4 (b) represents one-piece type.
Shown in Fig. 4 (a), in self, initial top spray nozzle of the gas supply 30 is configured in the approximate centre of substrate W, and water supply nozzle 20 is configured in than the center of substrate W and leans on outer circumferential side.That is the outside of water supply nozzle 20 spray nozzle of the gas supply 30 above being positioned on the radial direction of substrate W.If substrate W is S direction (clockwise direction) rotation in figure, then swing arm 21,31 is the center with swinging axle 22,32, and swing independently respectively is so that water supply nozzle 20 and top spray nozzle of the gas supply 30 side shifting outside radial direction.By the swing of swing arm 21,31, the track 20M of water supply nozzle 20 in the figure, top spray nozzle of the gas supply 30 is described arc orbit respectively and is moved along track 30M.Here, if swing arm 21,31 long enoughs, then above-mentioned arc orbit becomes roughly rectilinear orbit.In addition, used the word of swing here, while but nozzle sprays gas or water carries out unidirectional moving from center side direction lateral direction.Be that arm rotates.But when returning the starting position of cleaning to counter-rotation, so be called swing together.Water supply nozzle 20 concerns that with the position of top spray nozzle of the gas supply 30 being located at the water of supplying with from water supply nozzle 20 in this process that moves is not subjected to from the position of top spray nozzle of the gas supply 30 gas supplied interference.Typically, shown in track 20M, the 30M of Fig. 4 (a), water supply nozzle 20 is preferably being centered close to and the roughly point-symmetric position of top spray nozzle of the gas supply 30 with respect to substrate W.But be not limited to this, the angle of observing each nozzle from the center of substrate be above, preferred 60 degree of positive and negative 30 degree above, more preferably 90 spend more than, most preferably be 135 spend more than, be positioned at the position of leaving respectively.Thus, the disorder of liquid level can be prevented, and then watermark can be prevented to form.
Water supply nozzle 20 and top spray nozzle of the gas supply 30 always make the position in water supply nozzle 20 outside of spray nozzle of the gas supply 30 above being positioned on the radial direction of substrate W in the process that it moves, that is, keep water supply nozzle to move the time than top spray nozzle of the gas supply all the time apart from the state of the distance of pivot (center of substrate) apart from the distance of pivot (center of substrate).If the contact angle (with reference to Fig. 2) of the part (Low-k membrane portions typically) of the hydrophobicity of substrate W tendency raises or substrate size increases,, also under the action of centrifugal force of outer peripheral portion, dewater easily even then reduce the rotary speed of substrate W.If further reduce rotary speed, then be difficult to cause the moving of water of core for fear of this situation.So, water supply nozzle 20 is arranged on than top spray nozzle of the gas supply 30 by outer circumferential side, by while make water supply nozzle 20 up before the moving of spray nozzle of the gas supply 30 from substrate W the mind-set circumference move, supply with energetically water, the moisture film of the substrate circumference when continuing to keep drying operation is eliminated dehydration.Particularly, if substrate W is of a size of more than the 200mm, then only regulate and the control of supply gas amount can not be eliminated the watermark that the dehydration of peripheral part brings by rotary speed, so mobile water supply nozzle 20 earlier before the moving of spray nozzle of the gas supply 30 up, it is very important supplying with water in supply gas.In addition, here the method that mind-set circumference from substrate is moved water supply nozzle is illustrated, and all is to separate to circumference from the center of substrate W that proper spacing is provided with a plurality of nozzles, nozzle by from central division begins to supply with water successively and air-flow obtains identical effect but also can make water supply nozzle 20 and top spray nozzle of the gas supply 30.In addition, also can supply with water, begin to stop successively supplying with from the nozzle of central side to all a plurality of nozzles.
Here, the translational speed to the nozzle of the execution mode of Fig. 4 (a) describes.As mentioned above, always the former is positioned at the latter's the outside to water supply nozzle 20 in the process that moves with top spray nozzle of the gas supply 30.But, in the present embodiment, the translational speed of water supply nozzle 20 is set at slower than the translational speed of top spray nozzle of the gas supply 30, both roughly arrive the most peripheral of substrate W simultaneously.If constitute like this, then after water supply nozzle 20 outwards leaves from substrate W, perhaps after substrate W not being supplied with water, can not avoid the dehydration of substrate surface easily also by top spray nozzle of the gas supply 20 long-time sustainable supply gases.
Shown in Fig. 4 (b), in one-piece type, water supply nozzle 20 also is configured in the radial outside of top spray nozzle of the gas supply 30.Water supply nozzle 20 and top spray nozzle of the gas supply 30 be owing to be fixed on the common swing arm, so while water supply nozzle 20 and top spray nozzle of the gas supply 30 keep mutual relative position to describe to move by the arc orbit shown in the arrow M and along the radial direction of substrate W.Thereby, water supply nozzle 20 and above spray nozzle of the gas supply 30 when the circumference of substrate W moves, water supply nozzle 20 always with above when spray nozzle of the gas supply 30 keeps certain distances, direct of travel be positioned at than above spray nozzle of the gas supply 30 on the front.Because water supply nozzle 20 must be positioned at the position that is not subjected to from the interference of top spray nozzle of the gas supply 30 gas supplied,, be 20mm in the present embodiment so the distance of the radial direction of the substrate W of water supply nozzle 20 and top spray nozzle of the gas supply 30 is preferably 10～30mm.
Here, in the execution mode of Fig. 4 (b), link spray nozzle of the gas supply 30 and become roughly 90 degree with its moving direction with the line segment of water supply nozzle 20.Thereby, at the spray nozzle of the gas supply 30 at the center that is positioned at substrate W the mobile zero hour of nozzle and the water supply nozzle 20 that is positioned at the position of leaving as described above from the center about equally in the distance of the moment of mobile end distance center.By like this direction of moving direction and line segment being staggered, it is poor that the translational speed of two nozzles is given.The situation of this and Fig. 4 (a) be equally because, avoid easily water supply nozzle 20 outwards leave the back from substrate W or after substrate W being supplied with water also by spray nozzle of the gas supply 30 long-time sustainable supply gases, avoid the dehydration of substrate surface easily.The moving direction of two nozzles can be made as two nozzles the such direction of periphery that arrives substrate W simultaneously with the mode that staggers of the direction of the line segment that links two nozzles.This angle [alpha] depends on the length of above-mentioned line segment, but can be made as 80～110 the degree, be preferably 85～100 the degree, more preferably 90～95 the degree.
In addition, also can be provided with and a plurality of water supply nozzle 20 and top spray nozzle of the gas supply 30 are installed in structure on the swing arm, make its from the central part of substrate W outward perimembranous describe a plurality of different arc orbits simultaneously and move, carry out drying.Extend to peripheral part with general radial equal angles ground by the central part of a plurality of arc orbits from substrate W, can substrate W is dry equably.In addition, also can replace moving and water supply nozzle 20 and top spray nozzle of the gas supply 30 being moved to peripheral part point-blank from the central part of substrate W along arc orbit.
Get back to Fig. 1, continue the explanation of substrate board treatment 1.
Lower surface roughly equally spaced is equipped with a plurality of ejiction openings 36 with porous flooding nozzle 34 on the main body 35 with length bigger than the diameter of substrate W, be configured in the below of the substrate W that approximate horizontal ground keeps on the substrate maintaining part 10, so that pass through the vertical below at the center of substrate W.Supply with water from lower surface with the lower surface of 34 couples of substrate W of porous flooding nozzle, the edge roughly sprays water equably by the rectilinear direction (diameter of substrate W) at the center of substrate W.Use pure water, deionized water, carbon dioxide dissolving water etc. from lower surface together, with porous flooding nozzle 34 water of supplying with and the water of supplying with from water supply nozzle 20.Same with the water of supplying with from water supply nozzle 20 from lower surface with the water of porous flooding nozzle 34 supplies, also can and be formed on the angle of structure, the ejection water of the wiring pattern on the substrate W, each condition of placing the gaseous environment (temperature, pressure, cleannes etc.) etc. of substrate board treatment 1 according to the kind of substrate W, select among the alcohols of pure water, deionized water, carbon dioxide dissolving water, IPA etc., the organic solvent etc. onlyly, such selection typically is responsible for by control part 48.In addition, the water of supplying with porous flooding nozzle 34 from lower surface can similarly be heated with the water of supplying with from water supply nozzle 20.
Below spray nozzle of the gas supply 40 is configured in the below of the substrate W that keeps on the substrate maintaining part 10, and its structure is identical with top spray nozzle of the gas supply 30.Thereby below spray nozzle of the gas supply 40 can blow out with the surface area of substrate W and compare enough thin drying air-flow, by the drying gas that blows out from below spray nozzle of the gas supply 40, the water of the lower surface of substrate W is got rid of, and makes the lower surface drying of substrate W.1 typically in the air-flow that blows out from below spray nozzle of the gas supply 40, but also can be many.The gas that blows out from below spray nozzle of the gas supply 40 is identical with the gas that blows out from top spray nozzle of the gas supply 30, uses nitrogen or inert gas, removed the air of polluter or suitably regulate their relative humidity by heating target gas etc. or contain the gas of steam of the material that makes its surface tension reduction when be dissolved in water of the alcohols of IPA etc. or the steam of organic solvent etc.The gas that blows out from below spray nozzle of the gas supply 40 also can the kind of considering substrate W and be formed on the wiring pattern on the substrate W structure, place the only gas of basis selection of each condition that the gaseous environment (temperature, pressure, cleannes etc.) of substrate board treatment 1 waits.Such selection typically is responsible for by control part 48.
Below spray nozzle of the gas supply 40 is installed in the front end of swing arm 41, and the swinging axle 42 of swing arm 41 is attached on the drive source 43, constitutes travel mechanism by swing arm 41, swinging axle 42, drive source 43.Swing arm 41 is center swing via swinging axle 42 with swinging axle 42 under the effect of drive source 43, while below spray nozzle of the gas supply 40 is described arc orbit and moved along the radial direction of substrate W thereupon.In addition, also can be provided with and a plurality of below spray nozzle of the gas supply 40 is installed in structure on the swing arm 41, make its from the central part of substrate W outward perimembranous describe a plurality of different arc orbits simultaneously and move, carry out drying.Extend to peripheral part with the central part of general radial equal angles by a plurality of arc orbits from substrate W, can substrate W is dry equably.In addition, also can replace moving, and below spray nozzle of the gas supply 40 is moved to peripheral part point-blank from the central part of substrate W along arc orbit.In addition, here the method for spray nozzle of the gas supply 40 is described below mind-set circumference from substrate being moved, but a plurality of belows spray nozzle of the gas supply 40 is separated the proper spacing setting from the central part of substrate W to circumference, supply with air-flow successively by nozzle from central division, obtain and make below spray nozzle of the gas supply 40 mobile phases effect together.
In addition, also can replace lower surface to use the nozzle same with porous flooding nozzle 34 with water supply nozzle 20.But, since the lower surface of substrate W normally do not implement to connect up etc. have infiltrating uniformly, so also can be to stop such structure simultaneously after making as the porous flooding nozzle that lower surface is whole and soaking into.
The action that control part 48 constitutes the various parts of substrate board treatment 1 reaches the water of substrate W supply or the selection of gas.Control part 48 is electrically connected with porous flooding nozzle 34, below spray nozzle of the gas supply 40, maintaining part attraction portion 14, periphery attraction portion 44 with substrate maintaining part 10, water supply nozzle 20, top spray nozzle of the gas supply 30, lower surface respectively, for the injection flow velocity (flow) and the injection beginning of the rotary speed of roller 11 and pushing force, water and air-flow and stop, the attraction water of the mobile or starting position of each nozzle itself, stop position, substrate W circumference begin and stop to carry out suitable control.Control part 48 carries out these each control according to the program of loading in advance.Made up the control system of control basal plate processing unit 1 like this.
Then with reference to Fig. 1, the effect of substrate board treatment 1 is described.
Surface whole the water in preceding operation that is formed with the substrate W that will clean of damascene wiring covers and is transported in the substrate board treatment 1.At this moment, when the water that covers in preceding operation covers water from substrate W, also can be before making substrate W rotation from water supply nozzle 20 and upper surface with at least one of fixing flooding nozzle 28 to substrate W supply water.In addition, the water of covered substrate W pure water typically here.But, also can be the mixture of organic solvent, alcohols or alcohols and pure water.In the case, as long as before the drying of substrate W, can easily form thin liquid film, can prevent that the watermark that the lip-deep dehydration of substrate W causes from forming just passable with low discharge.Substrate W is held in approximate horizontal by the clamp portion 12 that the roller 11 of 4 substrate maintaining parts 10 is had with suitable pushing force.The substrate W that is retained approximate horizontal pivots by roller 11, can be to rotate below the 1000rpm.Particularly, the rotary speed of substrate W is preferably 30～800rpm.And then, be 300～500rpm if make the rotary speed of substrate W, then in one-piece type travel mechanism, also can use, so more preferably.If the raising rotary speed, then water droplet collides with the cup portion that centers on centrifuge and rebounds, and becomes the reason that forms watermark on substrate W, is limited to about 800rpm so preferably make.Like this upper limit of restriction rotary speed be because, if improve rotary speed, then in diameter is bigger substrate more than the 200mm, near the bigger periphery of centrifugal force, be easy to generate dehydration, be easy to generate watermark.In addition, if consider the drying of rotational velocity range as described above and lower surface described later, then can to make the rotary speed of substrate W forcibly be 30～1000rpm to roller 11.
On the other hand, if for roughly below the 30rpm, centrifugal force deficiency then, the moisture film of substrate W central portion only can not be got rid of with the auxiliary of gas by drying, so no matter how substrate size all preferably keeps the above rotary speed of 30rpm.And, supply with water with porous flooding nozzle 34 towards substrate W with fixedly flooding nozzle 28 and lower surface from upper surface with the rotation of substrate W, with the two surperficial whole waters coverings up and down of substrate W.If whole, then can prevent from substrate W, to be accompanied by the local desiccation of water and produce watermark with pure water covered substrate W surface.
After two surperficial waters coverings up and down with substrate W, top spray nozzle of the gas supply 30 and below spray nozzle of the gas supply 40 are moved from the approximate centre of substrate W, so that front end is come vertically the position of 3～10mm up and down respectively, make water supply nozzle 20 move to the position (with reference to Fig. 4) of depending on outer circumferential side 10～30mm radially than top spray nozzle of the gas supply 30.After making each nozzle move to assigned position, stop when upper surface is supplied with water with fixing flooding nozzle 28 and lower surface with porous flooding nozzle 34 or before, begin to supply with the N that uses the 300kPa of gas as dry to substrate W from top spray nozzle of the gas supply 30 and below spray nozzle of the gas supply 40
2Gas simultaneously, begins to supply with water from water supply nozzle 20 to substrate W upper surface.The water yield of supplying with is preferably 50～300mL/min.Under this state, make the rotary speed of substrate W be about 60rpm, and after the flow of gas reaches predetermined flow described later, top spray nozzle of the gas supply 30 and below spray nozzle of the gas supply 40 are moved towards the circumference of substrate W.Thereupon, Yi Bian also keep water supply nozzle 20 and be positioned at than top spray nozzle of the gas supply 30 by substrate W radial outside, Yi Bian its circumference towards substrate W is moved.
From water supply nozzle 20 sustainable supply water is in order to prevent that being accompanied by the lip-deep liquid that takes off of substrate W produces watermark, from such viewpoint, the quantity delivered of water can form the water overlay film on substrate W surface amount is just enough, and, the reason that liquid is beated takes place if quantity delivered too much also can become.Beat if liquid has taken place, then liquid can disperse to the surface of dried base plate W, becomes the reason that produces watermark.Thereby the flow of the water of supplying with from the 20 couples of substrate W of water supply nozzle is preferably and forms the required enough flows of water overlay film on substrate W surface.Particularly, in the diameter of substrate W is bigger substrate W such more than the 300mm, because centrifugal force is bigger, if so the flow of the water that substrate W is supplied with more greatly then liquid beat and become significant problem, on the contrary, along with the current from water supply nozzle 20 ejection move to the circumference of substrate W, the area that form the water overlay film reduces, and diminishes thereupon the flow of the water that needs for the water overlay film forms.Thereby, can when reaching position about half of radius of substrate W, reduce water supply nozzle 20 flow of the water that substrate W is supplied with.
Perhaps, can move to circumference from central division along with water supply nozzle 20 and reduce the flow of water gradually.If establishing water supply nozzle 20 is that the radius of r, substrate W is R apart from the position at the center on the substrate W, then π r
2Area by the drying gas drying of supplying with from top spray nozzle of the gas supply 30, be S=π (R so be formed on the area S of the water overlay film on the substrate W along with the mobile of water supply nozzle 20
2-r
2).Thereby, be G if establish the flow of the water (ultra-pure water) of the central part that supplies to substrate W, then the flow Q (r) of the water of supplying with from the water supply nozzle 20 of position r (ultra-pure water) is as with Q=G (1-(r
2/ R
2)) represent like that, also can the flow of water (ultra-pure water) be reduced continuously along with moving of water supply nozzle 20.Perhaps also can be made as Q≤G (1-((r
2/ R
2)).Like this,, the reason that liquid is beated can be stopped, the generation of watermark can be prevented by reduce the flow of water (ultra-pure water) continuously corresponding to the area change of the substrate W that will carry out the water overlay film, and further cutting water consumption.
In addition, the rotary speed of substrate W is high more, the water overlay film on easy more formation substrate W surface, and from the current of water supply nozzle 20 ejection when ratio is positioned at central part when being positioned at circumference centrifugal force increase, so form easily.Anti-speech, even move under the situation of rotary speed of the substrate W of circumference when also keeping current and being positioned at central part at current, the rotary speed of substrate becomes too high, and particularly in the diameter of substrate W was bigger substrate W such more than the 300mm, liquid is beated became significant problem.So, can be when water supply nozzle 20 reaches position about radius general of substrate W, the rotary speed of substrate W is reduced to the regulation rotary speed.The minimizing of the rotary speed of this substrate W is typically while mobile the carrying out that continues water supply nozzle 20.In addition, the minimizing of the rotary speed of substrate W is by forming the water overlay film and not causing that the beat acceleration of such regulation of liquid carries out.Effective especially under the situation of the one-piece type travel mechanism that the rotary speed that is controlled at employing substrate W of the rotary speed of such substrate W is higher.In addition, also can move to circumference from the central part of substrate W and reduce the rotary speed of substrate W gradually along with water supply nozzle 20.In addition, also can carry out the control of the flow of the control of rotary speed of this substrate W and the water supplied with to aforesaid substrate W simultaneously, also can carry out any.
The example of the control of the rotary speed of the control of the flow of the above-mentioned water of expression and substrate W among Fig. 5.Fig. 5 (a) is the curve chart of relation of position of flow and the current of expression water, and Fig. 5 (b) is the curve chart of relation of representing the position of the rotary speed of substrate W and current.Among the figure, the longitudinal axis is represented the rotary speed of the flow or the substrate W of water, and transverse axis is represented the position on the radius of substrate W, the center of " C " expression substrate W, the end of " E " expression substrate W.Shown in Fig. 5 (a), though initial current from the central side of substrate W to the circumference side shifting, the flow of water is also kept certain value.Reach a roughly half of the radius of substrate W at current, the flow of water diminishes gradually, and when current reached the end of substrate W, the flow of water became 0.In addition, shown in Fig. 5 (b), even initial current from the central side of substrate W to the circumference side shifting, the rotary speed of substrate W is also kept certain value.Reach a roughly half of the radius of substrate W at current, the rotary speed of substrate W diminishes gradually, and when becoming the value of regulation, the value of keeping this regulation reaches the end of substrate W up to current.In addition, the rotary speed of the flow of water or substrate W both can also can infinitely change by changing more than 2 grades or 3 grades.
If dry spray with high flow capacity from supplying with beginning with gas, then the water of covered substrate W can disperse, attached on the dried base plate W, become the reason of watermark.Therefore, spray with low discharge at first, spray with high flow capacity then.Keeping the time of low discharge is about 1 second～2 seconds.And then, after drying reaches high flow capacity with gas, top spray nozzle of the gas supply 30 and below spray nozzle of the gas supply 40 and water supply nozzle 20 are moved to the substrate peripheral direction, remove from substrate W and anhydrate.Low discharge is 1～20L/min (latm, 0 ℃ of conversion), and high flow capacity is more than the 20L/min (latm, 0 ℃ of conversion).The translational speed of each nozzle of this moment is moving when stopping when moving beginning slowly, typically is made as low speed along with moving to peripheral direction.This is because along with each nozzle moves to the substrate peripheral part, the area that removes the substrate W that anhydrates increases.Particularly, near the translational speed the portion of substrate center can be 10～40mm/s, can be made as about 2.5～6mm/s at the substrate peripheral part.Here so-called " near the central part " is typically with its inboard scope of the bowlder of roughly 1/10 the radius of the concentric radius of describing to have substrate circularly of substrate.The variable quantity of the translational speed of each nozzle can determine for the amount that makes the water that time per unit removes about equally, also can have linear characteristic in addition.In addition, on one side water supply nozzle 20 be preferably with respect to the central point of substrate W with above spray nozzle of the gas supply 30 symmetries the position, radially maintain a certain distance (Yi Bian 10～50mm) mobile, but also fixed range not necessarily.In addition, rotation along with substrate W, water on the substrate moves towards circumference from portion of substrate center under action of centrifugal force, if but this speed of speed ratio of the dehydration at the higher part place of hydrophobicity is fast, then the higher part of hydrophily in its vicinity is residual a drop, this drop moves to hydrophobic portion, can produce watermark therefrom.So, preferably move top spray nozzle of the gas supply 30 with gas one side mind-set circumference from substrate by real estate being supplied with drying on one side, moving of the water that is brought by centrifugal force from back pushing finished water moving towards circumference during not dewatering on the substrate.
In addition, contain in gas under the situation of steam isopropyl alcohol etc., that when being dissolved in water, make the material that its surface tension reduces in drying, can make amount bigger when being positioned at the central side of substrate W than dry when drying is positioned at the circumference side of substrate W with air-flow with air-flow.
Fig. 6 is the curve chart of quantity delivered with the relation of the position of the usefulness of the drying on substrate W air-flow of the expression steam (following be called in this paragraph " steam ") that makes the material that surface tension reduces.Among the figure, the longitudinal axis is represented the quantity delivered of steam V, and transverse axis is represented the position on the radius of substrate W, the center of " C " expression substrate W, the end of " E " expression substrate W.As shown in Figure 6, though initial dry with air-flow from the central side of substrate W to the circumference side shifting, also the quantity delivered with steam V is maintained certain value.Reach a roughly half of the radius of substrate W with air-flow in drying, the quantity delivered of steam becomes greatly gradually, and after becoming the value of regulation, the value of keeping this regulation reaches the end of substrate W with air-flow up to drying.The amount of dry steam with the capillary material of reduction in the gas along with drying with air-flow from the moving of center side direction circumference side, both can be by having changed more than 2 grades or 3 grades, also changed in stages not.In addition, drying is contained under the situation of steam with gas, the drying of injection is compared low discharge with the flow of gas with the situation that does not contain steam just much of that.
As mentioned above, special on bigger substrate such more than the 300mm, the peripheral part of substrate W, the area of removing moisture film becomes big more, so the translational speed of each nozzle towards the substrate circumference that preferably slow down.But the amount of the steam by making the capillary material of reduction that contains isopropyl alcohol etc. increases along with drying moves to peripheral part with air-flow, and the surface tension of water further reduces.Thus, the strength grow of the direction that gas-liquid interface is further existed galore by the water that furthers is even move also and drying can be kept constant with the translational speed of air-flow to the direction of peripheral part.Thus, can shorten the drying time of per 1 plate base W.In addition, if not from drying with mobile when beginning of air-flow but from increasing the material that surface tension is reduced midway, then can cut down the use amount that makes the material that surface tension reduces, so be preferred.
From above spray nozzle of the gas supply 30 and below the dry supply of spray nozzle of the gas supply 40 beginning with gas, begin the removing of water after, make the action of the maintaining part attraction portion 14 that is connected substrate maintaining part 10 and the vacuum source (not shown) in the periphery attraction portion 44, the attraction that also begins circumference attached to water on the substrate maintaining part 10 and substrate W and be the water of end is removed.Generally, the peripheral part of substrate since machining shape etc. not exclusively, water droplet is easier to be adhered to so compare with substrate surface, and the residual of water droplet taken place easily.Reach the trend of the circumference of substrate as far as possible according in recent years the nmosfet formation region that makes, require for example part apart from edge 2mm is also carried out the processing equal with central part.So, being provided with in the substrate maintaining part 10 of rotation maintenance substrate W attracts the maintaining part attraction portion 14 of water to promote to get rid of water near the substrate side surfaces, and, promote the drying of substrate W integral body by attract the water of substrate circumferences to prevent water droplet residual of the circumference of substrate W with periphery attraction portion 44.In addition, maintaining part attraction portion 14 and periphery attraction portion 44 are formed and ground connection by conductive material, so even because of substrate W rotation, produce static with empty G﹠W friction, can static electrification on the substrate W yet.In addition, owing on substrate maintaining part 10, be provided with and cover 17, so can not disperse to drying midway or on the dried substrate W again attached to the water on the substrate maintaining part 10.
If water supply nozzle 20 moves with the speed of stipulating and arrives the substrate peripheral part, then stop the supply of water.At this moment, also can be after water supply nozzle 20 arrives the substrate peripheral parts, after continuing to supply with the water random time, stop to supply with water.But, consider nozzle diameter and water supply nozzle 20 stopped in front of the circumference outside, so that water can still not spray downwards after leaving substrate W end face.After the supply that stops water, top spray nozzle of the gas supply 30 and below spray nozzle of the gas supply 40 roughly arrive the substrate outer peripheral face simultaneously, supply with in continuation after the arrival to stop supply gas behind the gas about 2～5 seconds.Moving of top spray nozzle of the gas supply 30 and below spray nozzle of the gas supply 40 stopping than the position of substrate end by the about 3～10mm of radially inner side (central side), here carries out stopping to supply with after the supply of stipulated time gas.If than the outer perimembranous supply gas in this position, then might on the upper surface of substrate because of from below the gas that blows out of spray nozzle of the gas supply 40 roll the pollution that produces dirty grade, on the base lower surface because of from above spray nozzle of the gas supply 30 blow gas roll the pollution that produces dirty grade.After the supply of gas stops, the maintaining part attraction portion 14 that being connected substrate maintaining part 10 and the vacuum source in the periphery attraction portion 44 are also stopped.More than, the processing of a substrate finishes, the substrate after next operation transport process.In addition, as mentioned above, drying contain in gas the steam, the dry flow that when being dissolved in water, make the material that its surface tension reduces with gas be low discharge with regard to enough situations under, the stop position that can make top spray nozzle of the gas supply 30 is for depending on the about 1～3mm of radially inner side (central side) than substrate end.Like this, be also not have rolling of gas under the situation of low discharge in drying with the flow of gas, the pollution of dirty grade can not take place.
In addition, have in the lower surface film forming of substrate W under the situation of film of difficult drying of heat oxide film etc., also can be in the drying of carrying out the reprocessing of lower surface below with 1000rpm after the upper surface drying of substrate.When reprocessing dry, drop remains on the substrate W hardly, can not become problem from the takeofing of drop of cup etc.The dry of this reprocessing can carry out under the situation of the mode of using rotary chuck as the substrate maintaining part especially.This be because, in the rotary chuck mode, be provided with rotating driveshaft in the approximate centre of substrate W, be difficult to be provided with the blow out nozzle of the drying of base lower surface with gas.But, in the rotary chuck mode, adopting under the such situation of hollow motor for example, the dry nozzle that blows out with gas also can be set, so also can make the lower surface drying of substrate W with the supply of gas at the lower surface of substrate W by drying.
With reference to Fig. 7, the substrate board treatment of rotary chuck mode is described.Fig. 7 is the figure of substrate board treatment 1E of the variation of the relevant embodiments of the present invention of explanation.In substrate board treatment 1E, replace the roller 10 (with reference to Fig. 1) of substrate board treatment 1 and possess the rotating chuck mechanism 13 that keeps substrate W and make its rotation.The rotating driveshaft 13b that rotating chuck mechanism 13 has a plurality of chuck jaw 13a that keep substrate W and the substrate W that kept by this chuck jaw 13a is rotated in horizontal plane.Rotating chuck mechanism 13 can make substrate W rotate below about 2000rpm forcibly.In addition, substrate board treatment 1E possesses the fixedly flooding nozzle 38 of lower surface of the lower surface of substrate W being supplied with flushing water.In addition, in substrate board treatment 1E, because its structural restriction does not have lower surface porous flooding nozzle 34 and below spray nozzle of the gas supply 40 (with reference to Fig. 1) that substrate board treatment 1 is possessed.In substrate board treatment 1E shown in Figure 7, represented that water supply nozzle 20 and top spray nozzle of the gas supply 30 are provided in the one-piece type example in the common travel mechanism.The travel mechanism of substrate board treatment 1E has swing arm 31A, swinging axle 32A, drive source 33A, and they are equivalent to swing arm 31, swinging axle 32, the drive source 33 of substrate board treatment 1 respectively.The mobile order of water supply nozzle 20 and top spray nozzle of the gas supply 30, the water of supplying with to substrate W and dry with the flow of gas, regularly, kind etc. is same with the situation of substrate board treatment 1.In addition, also can with the part of the opposed chuck mechanism 13 of the approximate centre of substrate W on, form towards the below of substrate W supply gas air supply opening 13h.From the below air supply opening 13h gas supplied gas of normal temperature or about 40 ℃ typically.Under the situation of air supply opening 13h, below air supply opening 13h preferably is formed on than on the high position of its periphery for the gathering of anti-sealing below being formed with.In addition, though do not illustrate, substrate board treatment 1E possesses the periphery attraction portion 44 that substrate board treatment 1 possesses.
In addition, also can around the part of the pipe arrangement 84 that is connected with fixing flooding nozzle 28 with upper surface, heater 81 be set, will be from the fixing water supplied with of 28 couples of substrate W of flooding nozzle of upper surface usefulness, similarly heat with the situation of substrate board treatment 1.In addition, the Temperature Detector 82 of the temperature that detects water also can be set in the pipe arrangement 84 in the downstream of heater 81, and be provided with from Temperature Detector 82 reception temperature signals and come the controller 83 of the output of control heater 81, to use the water of fixedly flooding nozzle 28 supplies to be adjusted to the temperature of regulation (more than the room temperature from upper surface, boiling point less than water, for example be more than 25 ℃, below 65 ℃, be preferably more than 30 ℃, below 60 ℃).Controller 83 also can constitute the part of control part 48.In addition, though omitted diagram, also can be adjusted to the temperature of regulation with identical main points heating from the water of water supply nozzle 20 supplies and from the fixedly water of flooding nozzle 38 supplies of lower surface.The heating of these water also can make water be undertaken by heater or heat exchanger as equipment by the heater that replaces being wound on the pipe arrangement.In addition, preferably will all heat with fixing flooding nozzle 28, lower surface 3 kinds from water supply nozzle 20, upper surface with the water of fixedly each nozzle supply of flooding nozzle 38, but also can heat at least a kind of water, make the viewpoint of time of the lower surface Rotary drying of substrate W from shortening described later, also can only heat from lower surface with the fixing water of flooding nozzle 38 supplies.
Perhaps, also can constitute, the rotating chuck mechanism 13X that substrate board treatment 1E possesses as shown in Figure 8 replaces rotating chuck mechanism 13 (with reference to Fig. 7).Fig. 8 is the part details drawing of variation of the rotating chuck mechanism of substrate board treatment 1E, and Fig. 8 (a) is a vertical view, and Fig. 8 (b) is B-B cutaway view of Fig. 8 (a).The rotating chuck mechanism 13X of relevant variation has hollow motor 13M, and a plurality of chuck jaw 13n that keep substrate W are installed on the periphery of hollow motor 13M.Hollow motor 13M rotates the substrate W that is kept by chuck jaw 13n in horizontal plane.In hollow motor 13M, the approximate centre of substrate W vertically below, be equipped with lower surface spray nozzle of the gas supply 13v to the jet surface gas of the downside of substrate W.Typically be injected into coniformly from lower surface spray nozzle of the gas supply 13v gas supplied, the following surperficial spray nozzle of the gas supply 13v side of this circular cone is the summit, be the bottom surface with the lower face side of substrate W.The gas that is coniform injection can make the angle beta (spray angle β) at the top in the axial cross section of circular cone become 60 °～120 °.This be because, if spray angle β is too small, then the arid region of the lower surface of the substrate W that brings of the injection of gas reduces, if spray angle β is excessive, then the drying effect of the lower surface of the substrate W that brings of the injection of gas diminishes.This spray angle β sets by the taper that peristome forms expansion toward the outer side that blows out at lower surface spray nozzle of the gas supply 13v.In addition, in hollow motor 13M, be equipped with lower surface fluid injector 13w to the conduct below flushing water supply nozzle of the jet surface water of the downside of substrate W.Lower surface fluid injector 13w also can replace lower surface with fixing flooding nozzle 38 (with reference to Fig. 7) and be located in the hollow motor 13M, also can be located in the hollow motor 13M with fixing flooding nozzle 38 (with reference to Fig. 7) with lower surface.
In substrate board treatment 1E, substrate W is rotated more than with 200rpm, from upper surface with the upper surface supply water of fixing 28 couples of substrate W of flooding nozzle and after forming the water overlay film, supply with drying gas while supply with water by the upper surface of water supply nozzle 20 and 30 couples of substrate W of top spray nozzle of the gas supply.Make the moving of water supply nozzle 20 in the operation of upper surface drying of substrate W and top spray nozzle of the gas supply 30, to the control of the rotary speed of the control of the output on substrate W surface, substrate W, in the control of drying with the amount of the capillary material of reduction in the gas, same with the situation of substrate board treatment 1.In addition, same with the situation of substrate board treatment 1 (with reference to Fig. 1), also can carry out 1 in the following control or make up two with on carry out, that is, and the low rotary speed control during of the rotary speed of the substrate W when making mobile water supply nozzle 20 be positioned at the circumference side than the central side that is positioned at substrate W; Contain in gas under the situation of the steam that when being dissolved in water, makes the material that its surface tension reduces in drying, make its amount when drying is positioned at the circumference side of substrate W with air-flow than dry control big when being positioned at the central side of substrate W with air-flow; The translational speed that makes water supply nozzle 20 and top spray nozzle of the gas supply 30 is in the translational speed control of moving when stopping nozzle slow when moving beginning.
Then, establish possess rotating chuck mechanism 13X shown in Figure 8, are the N that contain the IPA steam from top spray nozzle of the gas supply 30 gas supplied
2The diameter of the substrate W of gas, processing is the situation of 300mm, illustrates in greater detail the example of the effect of substrate board treatment 1E.The substrate W that the past operation is transported among the substrate board treatment 1E is that upside is held in approximate horizontal by chuck jaw 13n with the face that is formed with the damascene wiring.So swing arm 31A moves, so that top spray nozzle of the gas supply 30 is positioned at the top of the approximate centre of substrate W.Then,, substrate W is rotated with about 300rpm by the action of hollow motor 13M, from upper surface with the upper surface of fixing 28 couples of substrate W of flooding nozzle, from the lower surface supply water of lower surface liquid mouth 13w to substrate W.Flooding nozzle 28 stops to begin simultaneously from water supply nozzle 20 supply water and from top spray nozzle of the gas supply 30 supply gas from fixedly flooding nozzle 28 supply water of upper surface after the supply of the water of the upper surface of substrate W is carried out about 2 seconds use fixedly from upper surface.At this moment, the supply from the water of lower surface liquid mouth 13w continues.Then, water supply nozzle 20 and top spray nozzle of the gas supply 30 are moved from the center of substrate W towards circumference, make the upper surface drying of substrate W.At this moment, move along with peripheral direction and make the translational speed of swing arm 31 become low speed to substrate W.
Water supply nozzle 20 and top spray nozzle of the gas supply 30 begin to move, after spray nozzle of the gas supply 30 arrives the place of the distance of stipulating apart from the center of substrate W (for example about 75mm) up, stop from the supply of the water of lower surface fluid injector 13w, begin the gas (N to the lower surface of substrate W then immediately from lower surface spray nozzle of the gas supply 13v
2Gas) supply continues from the supply of the gas of lower surface spray nozzle of the gas supply 13v later on.The gas that sprays from lower surface spray nozzle of the gas supply 13v is with coniform diffusion, contact with the lower surface of substrate W corresponding to the part on the ground of circular cone, makes near the drying central part of lower surface of substrate W.Like this, by the drying of the lower surface of beginning substrate W in the dry run of the upper surface of substrate W, can shorten the required time of lower surface drying process described later.In addition, by before the lower surface drying process, making the central part drying of the substrate W that centrifugal force reduces in Rotary drying, can shorten the required time of lower surface drying process.Can improve production capacity thus.In addition, arrive the place of (for example about 75mm) about half of radius of substrate W at water supply nozzle 20 after, with (20 π/3) rad/s
2(200rpm/s) Yi Xia acceleration makes the rotary speed of substrate W be reduced to about 150rpm.
Then, after the border of the substrate edges side of supplying with from the upper surface of 20 couples of substrate W of water supply nozzle water, that drop on the current on the substrate W arrives peripheral end, continue moving and stopping of swing arm 31A from the supply of the water of water supply nozzle 20.Here, " peripheral end " of so-called substrate W is meant the part in the concentrically ringed outside of the substrate W of the little about 3mm of radius ratio substrate W radius, the part in the concentrically ringed outside of the substrate W of the preferred little about 1mm of radius ratio substrate W radius.Then, from above after the border of the substrate edges side upper surface gas supplied, that drop on the air-flow on the substrate W of 30 couples of substrate W of spray nozzle of the gas supply arrives peripheral end, continue moving of the supply of gas and the arm 31A that stops swinging.Then, with (20 π/3) rad/s
2(200rpm/s) Yi Xia acceleration gently rises the rotary speed of substrate W, the rotary speed of substrate W reach 500rpm stop when above from above the supply of gas of spray nozzle of the gas supply 30.
In the present embodiment, since from above contain the IPA steam spray nozzle of the gas supply 30 gas supplied, so it is just enough that the flow of the gas that sprays is a low discharge, even the peripheral end that makes top spray nozzle of the gas supply 30 move to substrate W does not have rolling of gas yet, the pollution of dirty grade can not take place.In addition, owing to make water supply nozzle 20 and top spray nozzle of the gas supply 30 move to the peripheral end of substrate W, make the upper surface of substrate W be dried to the peripheral end of substrate W so can watermark not take place.In addition, upper surface mixing at substrate W exists under the situation of hydrophilic surface and hydrophobic surface, if stop from top spray nozzle of the gas supply 30 supply gas, then Ma Langgeni (マ ラ Application go ニ) effect disappears, so the water that remains on the hydrophilic surface can be got back to the inboard of substrate W and become the reason that produces watermark, but since the rotary speed of substrate W arrive 500rpm stop when above from above spray nozzle of the gas supply 30 supply gas, so can prevent to produce watermark by the central side that centrifugal force stops the water of the periphery that remains in substrate W and side to enter substrate W.In addition, the moment that the rotary speed of substrate W is gently risen, the drying process of the lower surface of beginning substrate W.That is, in substrate board treatment 1E, the then drying of the upper surface of substrate W and make the lower surface drying.
Below, the operation of the lower surface drying that makes substrate W is described.When after the drying of the upper surface of substrate W, making lower surface dry, can carry out according to the rotary speed more than 2 grades or 2 grades, so that with smaller rotary speed (typically about 500rpm) substrate W rotation back is rotated with bigger rotary speed (typically about 1000rpm) at first.This be because, when after the drying of the upper surface of substrate W, making lower surface dry, when the rotary speed that makes substrate W rises quickly, if under the residual situation that drop arranged on the side of substrate W or the lower surface, might water droplet can collide on cup or the wall and takeoff, attached on the surface by above-mentioned operation dried base plate W, it becomes former thereby produce watermark on substrate W.In the rotary speed that makes substrate W with more than 2 grades when variable, can be with (20 π/3) rad/s
2(200rpm/s) Yi Xia acceleration carries out.Perhaps, also can be with (20 π/3) rad/s
2Acceleration acceleration is little by little risen, drop does not bounce back into substrate and high speed rotating substrate W.In addition, for the drying time of the lower surface that shortens substrate W, carry out drying on one side also can be on one side to the lower surface supply gas of substrate W substrate W is rotated from below air supply opening 13h or lower surface spray nozzle of the gas supply 13v.
In Fig. 9, be illustrated in the example of control of the rotary speed of the substrate W when making lower surface dry after the drying of upper surface of substrate W.Fig. 9 is the rotary speed of expression substrate W and the curve chart of the relation in elapsed time.Among the figure, the longitudinal axis is represented the rotary speed of substrate W, and transverse axis is represented the elapsed time.Initial point is represented the moment of the drying of the beginning lower surface after the drying of the upper surface of substrate W finishes.If the drying of beginning lower surface then makes the rotary speed of substrate W rise lentamente, if reach the value of regulation then temporarily keep this rotary speed.Then,, the rotary speed of substrate W is risen, after rising to the value of regulation, keep this rotary speed and make substrate W drying through after the stipulated time.In Fig. 9, represented to make the example of the rotary speed of substrate with 2 grades of variations, but as mentioned above, also can be to change more than 2 grades.
In addition, substrate W for diameter 300mm, following table is shown in grinds Low-k film, clean, and after making the upper surface drying with the speed rotary plate W of 200rpm the time, the testing result of the foreign matter when under 3 conditions shown below, making back side Rotary drying.Here, so-called foreign matter is with the laser defect detecting device of the substrate W after the dried of the back side (ケ-エ Le エ-テ Application コ-Le corporate system: model " SP-1/TBI ") result of the particulate more than the detection diameter 0.2 μ m.Above-mentioned 3 conditions are as follows.
(1) after the rotary speed 500rpm with substrate W rotated for 1 second with 100rpm/s ((10 π/3) rad/s
2) acceleration make the rotary speed of substrate W rise to 1000rpm, rotated for 45 seconds with this speed after, with 100rpm/s ((10 π/3) rad/s
2) acceleration stop the rotation of substrate W.
(2) after the rotary speed 1000rpm with substrate W rotated for 1 second with 250rpm/s ((25 π/3) rad/s
2) acceleration make the rotary speed of substrate W rise to 1400rpm, rotated for 22 seconds with this speed after, with 500rpm/s ((50 π/3) rad/s
2) acceleration stop the rotation of substrate W.
(3) after the rotary speed 500rpm with substrate W rotated for 1 second with 100rpm/s ((10 π/3) rad/s
2) acceleration make the rotary speed of substrate W rise to 1400rpm, rotated for 22 seconds with this speed after, with 500rpm/s ((50 π/3) rad/s
2) acceleration stop the rotation of substrate W.
Respectively estimate the result of two samples for above-mentioned each condition, the number of detected foreign matter is 27,22 under the situation of (1), is 52,47 under the situation of (2), is 36,36 under the situation of (3).By the result as can be known, can infer that the generation rate of watermark is minimum under the situation of (1) in above-mentioned 3 conditions.
More than the effect of Shuo Ming substrate board treatment 1,1E is carried out according to the program that is loaded in the control part 48.Control part 48 typically comprises the computer of personal computer or microcomputer etc. and constitutes.In addition, substrate board treatment 1,1E typically are arranged under the atmosphere.Here under the said atmosphere, be not meant the vacuum exhaust of carrying out processing substrate in the past or carried out the environment behind the inert gas replacement, typically say, generally be meant in the dust free room of cleannes with regulation that substrate board treatment 1,1E are set.Generally, in dust free room, making constant pressure than outside higher in order to prevent to invade the purpose of dust from the outside, be a little malleation so compare with atmospheric pressure in the dust free room, but such gaseous environment is also contained in the notion of " under the atmosphere ".In addition, " under the atmosphere " for example be u.s. federal standard 209D grade 100, be preferably the environment in the grade dust free room below 10, vertical laminar flow.
Then, to the lapping device of the substrate board treatment 1 that possesses relevant embodiments of the present invention or substrate board treatment 1E and possess substrate board treatment 1 or the electroless plating coating apparatus of substrate board treatment 1E describes.
Figure 10 is the diagrammatic top view that possesses the lapping device of substrate board treatment 1,1E.Lapping device 2 is made of grind section 100 and cleaning part 200.Grind section 100 disposes the work delivery device 120 that carries out the handing-over of substrate W with grinding unit 110.Grinding unit 110 is following structures: be provided with rotary table 111 in central authorities, dispose the grinder 113 that apical ring 112 has been installed in the one side, dispose the finishing unit 115 that dressing tool 114 has been installed at opposite side.In addition, cleaning part 200 has two transfer robots 210 and 220 that can move along arrow Z direction in central configuration, in the one side roller is scrubbed unit 50, brush and wash substrate board treatment 1, the 1E of unit 60 and relevant embodiments of the present invention and arrange configured in series, dispose two the workpiece reverse engines 201,202 that make substrate W counter-rotating at opposite side.
Figure 11 be expression cleaning part 200 the inside detailed structure want portion's stereogram.As shown in the figure, transfer robot 210,220 each two groups of arm mechanisms 211,221 of mounted on surface and constituting thereon all.On each front end of arm mechanism 211,221, be separately installed with the hand 212,213,222,223 that keeps substrate W.In addition, hand 212 and 213 is configuration overlappingly up and down, and hand 222 and 223 is configuration overlappingly up and down also.
Figure 12 is the schematic isometric that the expression roller is scrubbed unit 50.Roller scrub unit 50 comprise the outer peripheral edges of supporting substrate W and rotation many (being 6 in the drawings) rotating shafts (holding member that possesses rotating mechanism) 51, be the roller shape and be provided in substrate W two roll shape cleaning parts 52,53 up and down, rotating shaft 52b, the 53b of the face that is parallel to substrate W are toward or away from and the driving mechanism 54,55 that rotates respectively to arrow F1, F2 direction and to supplying with the remover liquid nozzle 56 of cleaning fluid and constitute in the surface of substrate W with respect to substrate W.Roll shape cleaning part the 52, the 53rd, a 52b, 53b pass the structure by the spongiotic cylinder 52a of the PVA system of porous matter, 53a.The average diameter in the hole that forms on the sponge that constitutes cylinder 52a, 53a is more little as can be known, and it is high more that the dust (particulate) of roll shape cleaning part 52,53 is removed ability, most preferably is below the 110 μ m.Cylinder 52a, 53a also can be polyurathamc systems.Remover liquid nozzle 56 is installed on the cleaning arm 57, on one side under the effect of swinging axle 58 to the direction shown in arrow A swing, on one side with cleaning solution supplying to the surface of substrate W.Cleaning fluid can use the cleaning fluid that contains interfacial agent.
Figure 13 is the schematic isometric that the expression brush is washed unit 60.Brush is washed unit 60 and is comprised rotating chuck mechanism 61 and pen type brush wiper mechanism 63 and constitute.Rotating chuck mechanism 61 has the chuck jaw 62 of the periphery that keeps substrate W, is rotated driving by rotating driveshaft 67 to the direction shown in the arrow C.Pen type brush wiper mechanism 63 possesses an end and is supported on swing arm 65 on the axle 64, be provided with towards the cleaning surface of substrate W outstanding rotating driveshaft 66 below vertically at the other end of swing arm 65, the pen type cleaning part 68 that is made of the PVA system sponge of porous matter or polyurathamc etc. is installed in the lower end of rotating driveshaft 66.Pen type cleaning part 68 forms bottom surface roughly cylindric that the contact-making surface that has with substrate W is a level, and it is of a size of for example highly about 5mm, the about 20mm of external diameter.In addition, the average diameter that is formed on the micro hole on the sponge is about 110 μ m.The effect of the more little then sponge of the average diameter of micro hole is big more, so preferred aperture is littler than 80 μ m.Axle 64 as shown by arrow H, lifting up and down, and by the rotation of axle 64, swing arm 65 is to the swing of the direction shown in the arrow I, and by the rotation of rotating driveshaft 66, pen type cleaning part 68 rotates to the direction shown in the arrow J.Brush is washed unit 60 and is also possessed the cleaning fluid mouth 69 of supplying with cleaning fluid.Cleaning fluid can use the cleaning fluid that contains interfacial agent.
Then, the effect to lapping device shown in Figure 10 2 describes.From the hand 222 (with reference to Figure 11) of box 230 usefulness the transfer robots 220 of taking in the substrate W before grinding substrate W is taken out blocks ofly, give workpiece reverse engine 202, substrate W is reversed, the face (for example circuit pattern formation face) that makes grinding down.And then, substrate W is sent to from workpiece reverse engine 202 on the hand 212 of transfer robot 210, carry to the work delivery device 120 of grind section 100.Substrate W on the work delivery device 120 shown in arrow L, be maintained at rotation grinder 113 apical ring 112 lower surface and be moved on the rotary table 111, the rotation abradant surface 116 on ground.At this moment, never illustrated lapping liquid supply pipe on the abradant surface 116 is supplied with lapping liquid.Substrate W after grinding is sent back to work delivery device 120 once more, give workpiece reverse engine 201,, scrub unit 50 by hand 213 to roller and transfer on one side by after the flushing liquor flushing counter-rotating on one side by the hand 213 (with reference to Figure 11) of transfer robot 210.
As mentioned above, the roll shape cleaning part 52,53 of rotation is connected on the upper and lower surface of substrate W of rotation,, will removes, make it with cleaning fluid flow (with reference to Figure 12) attached to the particulate on the upper and lower surface of substrate W from remover liquid nozzle 56 jet cleaning liquid.To scrub the hand 212 of substrate W by transfer robot 210 after unit 50 cleans by roller scrubs unit 50 from roller and is transplanted on brush and washes unit 60.Wash in the unit 60 at brush, control the periphery of substrate W, under this state, drive driving shaft 67 and make rotating chuck mechanism 61 whole high speed rotating, make the regulation rotary speed rotation of substrate W thus with 500～1500rpm by rotation with chuck 62.Rotary speed during the processing of the substrate W of rotating chuck mechanism 61 can be selected by the rotating control assembly of the not shown CD-ROM drive motor that is connected with rotating driveshaft 67, the scope of allowing rotary speed about several thousand rpm.The pen type cleaning part 68 that is in rotation status is connected on the upper surface of the substrate W that is in rotation status, supplies with cleaning fluid from cleaning fluid mouth 69, makes swing arm 65 swings simultaneously, comes the upper surface (with reference to Figure 13) of cleaning base plate W thus.The contact angle that is typically had water by the surface of the substrate after the milled processed is the following parts of above 80 degree of 30 degree like this, is easy to generate watermark.To be transported among substrate board treatment 1, the 1E with the hand 223 of transfer robot 220 by the substrate W that brush is washed after unit 60 cleans.In addition, when carrying, the upper surface portion of substrate ground is dry, might produce watermark, so preferably after pen cleans or wash in conveying, carry the upper surface water overlay film of substrate on one side on one side.In substrate board treatment 1,1E, carry out cleaning and the drying of substrate W by the main points of in the explanation of the effect of above-mentioned substrate board treatment 1,1E, narrating.Like this, in lapping device 2,, can not produce watermark and handle for the substrate W that is formed with damascene wiring that is easy to generate watermark.
In addition, in lapping device 2, also can replace roller scrub unit 50 roll shape cleaning part 52,53 cleaning or before the cleaning of roll shape cleaning part 52,53, the upper surface of substrate W is applied ultrasonic energy and cleans from remover liquid nozzle 56.The cleaning fluid that has applied ultrasonic energy by injection cleans, and removes substrate W and goes up a plurality of particulates that exist.In addition, also can replace brush wash unit 60 pen type cleaning part 68 cleaning or before cleaning, the upper surface of substrate W is applied ultrasonic energy and cleans from cleaning fluid mouth 69.In addition, in scrubbing, scrub with roller and to compare, brush is washed particularly and to be removed aspect the ability better at foreign matter, therefore, for example under the less situation of the amount of foreign matter, carry out the single treatment that brush is washed, under more situation, come into effect roller most and scrub, then implement the aftertreatment that brush is washed, can remove foreign matter efficiently.In addition, also brush can be washed or roller scrubbed and brush is washed both by implementing with substrate board treatment 1, module that 1E is identical.If implement by identical module, the space that is provided with that then can cut down lapping device 2, and owing to the mobile of substrate W tails off, so become efficient.
Figure 14 is the diagrammatic top view that possesses the electroless plating coating apparatus of substrate board treatment 1,1E.Electroless plating coating apparatus 3 except with the grind section 100 of the lapping device among Figure 10 2 instead of the plating portion 300, be the structure same with lapping device 2.That is, the cleaning part 200 of electroless plating coating apparatus 3 is structures identical with lapping device 2.The preceding cleaning module 301 that plating portion 300 alignment arrangements are cleaned before having the substrate before pair plating to carry out, make the substrate counter-rotating reverse engine 302, to the surface of substrate the 1st pretreatment unit 303a, the 303b of catalyst is provided, to carrying out the 2nd pretreatment unit 304a, 304b that soup handles and electroless plating implemented on the surface of substrate applied the electroless plating of handling and apply unit 305a, 305b in the surface of the substrate that added this catalyst.In addition, be provided with plating solution feed unit 306 in the end of plating portion 300.And then, dispose travelling transfer robot 310 at the central portion of plating portion 300.
The effect of electroless plating coating apparatus 3 shown in Figure 14 then, is described.From taking in the box 230 conveying substrate W of the substrate W before the plating, give above-mentioned cleaning module 301 by transfer robot 220,210.In above-mentioned cleaning module 301, remove residual impurity of copper of remaining on Low-k film etc. etc.For example, real estate is kept down, in the acid solution (soup) of the sulfuric acid of 0.5M etc. with substrate W dipping 1 minute.Then, the surface of the substrate cleaning fluid (water) with ultra-pure water etc. is cleaned.Then, substrate W is transported among the 1st pretreatment unit 303a (perhaps 303b) with transfer robot 310, the maintenance that here substrate W faced down provides catalyst to the surface of substrate W.It for example is by making substrate W be impregnated into the PdCl of 0.005g/L that this catalyst adds
2With carried out in 1 minute in the mixed solution (soup) of HCl of about 0.2mol/L etc.Thus, on the surface of wiring (Cu), be attached with Pd (palladium), on the surface of wiring, form Pd nuclear as catalyst core (seed) as catalyst.Then, the surface of water cleaning base plate W.
Then, the substrate W that has added this catalyst is transported among the 2nd pretreatment unit 304a (or 304b) with transfer robot 310, the maintenance that here substrate W faced down is carried out soup to the surface of substrate W and is handled.For example, make substrate W be immersed in Na
2C
6H
5O
72H
2In the solution (soup) of O (natrium citricum) etc., neutralisation treatment is implemented on the surface of wiring (Cu).Then, the surface of water cleaning base plate W.Like this, the substrate of having implemented the pre-treatment that electroless plating applies being transported to electroless plating by transfer robot 310 applies among the unit 305a (or 305b).In electroless plating applied unit 305a, facing down kept substrate W, and it is in Co-W-P plating solution of 80 ℃ about 2 minutes that substrate W is impregnated into temperature, electroless plating is implemented on the surface of the wiring of activate selectively applied (non-electrolysis Co-W-P covers plating).Then, the surface of the substrate W cleaning fluid (water) with ultra-pure water etc. is cleaned.Thus, form the wiring protective layer (cap plating layer) that constitutes by Co-W-P alloy film selectively on the surface of wiring.Then, the substrate W after this electroless plating apply handled is transported in the reverse engine 302 by transfer robot 310, makes substrate W counter-rotating here, so that the surface that is formed with wiring pattern (face up) up.
Being transported to transfer robot 210 that substrate W in the reverse engine 302 is cleaned portion 200 is transported to roller and scrubs in the unit 50, below with the effect of the cleaning part 200 of lapping device 2 shown in Figure 10 in the same manner, utilize roller to scrub that unit 50 and brush are washed the scrubbing of unit 60, the substrate by substrate board treatment 1,1E cleans.In addition, when carrying, the upper surface of substrate might be dry partly and produce watermark, thus preferably clean the back at once or in conveying, wash at pen, on one side the upper surface water overlay film of substrate is carried on one side.Like this, in electroless plating coating apparatus 3,, can not produce watermark and handle for the substrate W that is formed with damascene wiring that is easy to generate watermark.
The substrate W that does not produce watermark and be cleaned processing in the substrate board treatment 1 of above-mentioned lapping device 2 or electroless plating coating apparatus 3,1E forms electrode, is cut into slices through checking, forms semiconductor device.In addition, in the above-described embodiment, when carrying,, but also can replace it and with the mixture covering of organic solvent, alcohols or alcohols and pure water with pure water covered substrate surface.In the case, after the matting of substrate, before the drying process of substrate, can easily form thin liquid film, can prevent the watermark formation that liquid causes of taking off on the substrate surface with low discharge.
Claims (50)
1, a kind of substrate processing method using same is characterized in that, possesses:
Substrate is implemented planarization or the deposited operation of handling of electroless plating;
The operation that aforesaid substrate is held in level and rotates in this horizontal plane;
The operation that the upper surface water of having implemented the aforesaid substrate of above-mentioned processing is covered; With
Upper surface to aforesaid substrate sprays the operation that the drying of comparing thin with the surface area of aforesaid substrate is used the air-flow of gas;
When constituting the air-flow that sprays above-mentioned dry usefulness gas, remove above-mentioned water from the upper surface of aforesaid substrate by the rotation in the above-mentioned horizontal plane;
Said flow constitutes, supply with to the surface of aforesaid substrate above-mentioned dry the time with gas, from the central side of aforesaid substrate to the circumference side shifting;
Also possess: from the top of aforesaid substrate, spray the operation of the thin current of comparing with the surface area of aforesaid substrate to the upper surface of aforesaid substrate, that is, the eject position of above-mentioned current is positioned at the water flow jet operation of leaning on the outer radial periphery side than the eject position of said flow; With
When spraying above-mentioned current, make above-mentioned current along with moving of said flow from the central side of aforesaid substrate operation to the circumference side shifting;
The rotary speed of aforesaid substrate is little when being positioned at the central side of aforesaid substrate than above-mentioned current when above-mentioned current are positioned at the circumference side of aforesaid substrate.
2, substrate processing method using same as claimed in claim 1 is characterized in that, the downside surface that possesses to aforesaid substrate sprays the operation that the drying of comparing thin with the surface area of aforesaid substrate is used the air-flow of gas.
3, substrate processing method using same as claimed in claim 1 is characterized in that, possesses at water to cover the operation of scrubbing the upper surface of aforesaid substrate before the operation of upper surface of aforesaid substrate.
4, substrate processing method using same as claimed in claim 1 is characterized in that, above-mentioned water is the deionized water of having removed dissolved salts at least.
As claim 1 or 4 described substrate processing method using sames, it is characterized in that 5, above-mentioned water is the carbon dioxide dissolving water that has dissolved carbon dioxide.
6, as claim 1 or 4 described substrate processing method using sames, it is characterized in that possessing the operation of the above-mentioned water of heating.
7, substrate processing method using same as claimed in claim 1 is characterized in that, above-mentioned dry relative humidity with gas is below 10%.
8, substrate processing method using same as claimed in claim 1 is characterized in that, above-mentioned drying contains with gas water is solubility, makes the steam of the material that its surface tension reduces when being dissolved in water.
9, substrate processing method using same as claimed in claim 8 is characterized in that, will be included in the temperature that above-mentioned drying is being stipulated with the material insulation liquid before the gas, that its surface tension is reduced.
10, substrate processing method using same as claimed in claim 1 is characterized in that, possesses by rotation to keep the maintaining part of aforesaid substrate to attract the operation of above-mentioned water.
11, substrate processing method using same as claimed in claim 1 possesses the operation that attracts above-mentioned water at the circumference of aforesaid substrate.
12, substrate processing method using same as claimed in claim 8 is characterized in that,
When being dissolved in above-mentioned water, make the amount of steam in above-mentioned gas of the material that its surface tension reduces, big when when above-mentioned drying is positioned at the circumference side of aforesaid substrate with air-flow, being positioned at the central side of aforesaid substrate with air-flow than above-mentioned drying.
13, as claim 1 or 12 described substrate processing method using sames, it is characterized in that, by moving of said flow, when the circumference side is released the water that covers on the above-mentioned substrate gradually, make the aforesaid substrate drying gradually to the circumference side from this central part from the central part of aforesaid substrate.
14, substrate processing method using same as claimed in claim 1 is characterized in that, the flow of the current that spray to the upper surface of aforesaid substrate is little when being positioned at the central side of aforesaid substrate than above-mentioned current when above-mentioned current are positioned at the circumference side of aforesaid substrate.
15, as claim 1 or 14 described substrate processing method using sames, it is characterized in that, from the central side of aforesaid substrate translational speed, slow during than the mobile beginning of said flow when mobile the stopping of said flow to the said flow of circumference side.
16, substrate processing method using same as claimed in claim 1 is characterized in that, above-mentioned water flow jet position is the position that is not subjected to the interference of said flow.
17, substrate processing method using same as claimed in claim 1 is characterized in that, the rotary speed of aforesaid substrate is more than the 30rpm, below the 800rpm.
18, substrate processing method using same as claimed in claim 2 is characterized in that,
Possesses the operation of before the injection of said flow, supplying with water to the lower surface of aforesaid substrate;
When said flow moves to the lower surface jet drying gas of aforesaid substrate.
19, substrate processing method using same as claimed in claim 1 is characterized in that, possesses:
The rotary speed of aforesaid substrate is made as the operation of the 1st regulation rotary speed;
The operation that when above-mentioned current arrive the peripheral end of aforesaid substrate, above-mentioned current is stopped;
When arriving the peripheral end of aforesaid substrate, said flow stops the operation that moves of said flow; And
Be positioned in said flow under the state of peripheral end of aforesaid substrate the rotary speed of aforesaid substrate is risen, when the rotary speed of aforesaid substrate arrives than high the 2nd regulation rotary speed of above-mentioned the 1st regulation rotary speed, stop the operation of said flow.
20, substrate processing method using same as claimed in claim 1 is characterized in that, possesses the operation in the lower surface drying that makes aforesaid substrate after the upper surface of aforesaid substrate is removed above-mentioned water.
21, substrate processing method using same as claimed in claim 20 is characterized in that, in the operation of the lower surface drying that makes aforesaid substrate, the rotary speed of aforesaid substrate is changed.
22, substrate processing method using same as claimed in claim 21 is characterized in that, the variation of rotary speed that makes aforesaid substrate is with 20 π/3rad/s
2Following acceleration carries out.
23, a kind of substrate board treatment is characterized in that, possesses:
The substrate maintaining part makes substrate maintenance level and rotation;
The top spray nozzle of the gas supply is configured in the top of the substrate that is kept by the aforesaid substrate maintaining part, to the uper side surface supply gas of this substrate;
Water supply nozzle, be configured in the top of the substrate that is kept by the aforesaid substrate maintaining part and supply with water to this substrate, this water supply nozzle upwards is configured in the footpath of aforesaid substrate: than from above-mentioned top spray nozzle of the gas supply the aforesaid substrate gas supplied being supplied with above-mentioned water more in the outer part;
Travel mechanism makes above-mentioned top spray nozzle of the gas supply and the above-mentioned water supply nozzle central part side direction circumference side shifting from substrate; With
Control part rotates aforesaid substrate as follows: the rotary speed of the aforesaid substrate when above-mentioned water supply nozzle is positioned at the circumference side of aforesaid substrate, the rotary speed of the aforesaid substrate when being positioned at the central side of aforesaid substrate than above-mentioned water supply nozzle is slow.
24, substrate board treatment as claimed in claim 23 is characterized in that, possesses thermostat, and this thermostat is included in material in the above-mentioned gas, that its surface tension is reduced with the liquid condition storage of set point of temperature as steam.
25, substrate board treatment as claimed in claim 23 is characterized in that, also possesses the maintaining part attraction portion of attraction attached to the water on the aforesaid substrate maintaining part.
26, substrate board treatment as claimed in claim 23 is characterized in that, also possesses the periphery attraction portion that attracts above-mentioned water from the circumference of aforesaid substrate.
27, substrate board treatment as claimed in claim 25 is characterized in that, above-mentioned maintaining part attraction portion has the conductive part that is formed by conductive material, and this conductive part is grounded.
28, substrate board treatment as claimed in claim 26 is characterized in that, above-mentioned periphery attraction portion has the conductive part that is formed by conductive material, and this conductive part is grounded.
29, as claim 23 or 25 described substrate board treatments, it is characterized in that,
Possess the below spray nozzle of the gas supply, this below spray nozzle of the gas supply is configured in the below of the substrate that is kept by the aforesaid substrate maintaining part, to the downside surface supply gas of this substrate;
The aforesaid substrate maintaining part has the roller that contacts with the end of maintained substrate, rotates around its axle when above-mentioned roller keeps with the contacting of maintained substrate.
30, substrate board treatment as claimed in claim 23 is characterized in that,
Possess the lower surface spray nozzle of the gas supply, this lower surface spray nozzle of the gas supply is configured in the below of the substrate that is kept by the aforesaid substrate maintaining part, to the downside surface supply gas of this substrate;
The aforesaid substrate maintaining part has the chuck jaw that keeps aforesaid substrate.
31, substrate board treatment as claimed in claim 30, it is characterized in that, above-mentioned lower surface spray nozzle of the gas supply is configured in the below at the center of the substrate that is kept by above-mentioned chuck jaw, make from above-mentioned lower surface spray nozzle of the gas supply gas supplied be injected into the top be the below coniform.
32, substrate board treatment as claimed in claim 23 is characterized in that, possesses the lid of at least a portion that covers the aforesaid substrate maintaining part, so that can not disperse to maintained substrate attached to the water on the aforesaid substrate maintaining part.
33, substrate board treatment as claimed in claim 23 is characterized in that, possesses:
Flushing water supply nozzle in top is supplied with water to the upper surface of aforesaid substrate;
Flushing water supply nozzle in below is supplied with water to the lower surface of aforesaid substrate.
34, substrate board treatment as claimed in claim 33 is characterized in that, will wash water and at least 1 heating from the water that above-mentioned below flushing water supply nozzle is supplied with that water supply nozzle is supplied with from the water of above-mentioned water supply nozzle supply, from above-mentioned top.
35, substrate board treatment as claimed in claim 33 is characterized in that, the water of supplying with from above-mentioned below flushing water supply nozzle is heated.
36, substrate board treatment as claimed in claim 23, it is characterized in that, above-mentioned travel mechanism make above-mentioned above spray nozzle of the gas supply and above-mentioned water supply nozzle during from the central part side direction circumference side shifting of substrate, the translational speed of the translational speed before during mobile the stopping of above-mentioned top spray nozzle of the gas supply and above-mentioned water supply nozzle when moving beginning is slow.
37, substrate board treatment as claimed in claim 23 is characterized in that, the rotary speed of aforesaid substrate is more than the 30rpm, below the 800rpm.
38, as claim 23 or 36 described substrate board treatments, it is characterized in that, possesses control part, this control part is regulated the flow of the above-mentioned water of supplying with to aforesaid substrate from above-mentioned water supply nozzle as follows: the flow of the above-mentioned water of supplying with to aforesaid substrate when above-mentioned water supply nozzle is positioned at the circumference side of aforesaid substrate, the flow of the above-mentioned water of supplying with to aforesaid substrate when being positioned at the central side of aforesaid substrate than above-mentioned water supply nozzle is little.
39, substrate board treatment as claimed in claim 23, it is characterized in that, possesses control part, make above-mentioned above spray nozzle of the gas supply and above-mentioned water supply nozzle during from the central part side direction circumference side shifting of substrate, the rotary speed of aforesaid substrate is made as the 1st regulation rotary speed, when arriving the peripheral end of aforesaid substrate, above-mentioned water supply nozzle stops from the supply of the above-mentioned water of above-mentioned water supply nozzle, when spray nozzle of the gas supply arrives the peripheral end of aforesaid substrate above above-mentioned, when stopping above-mentioned top spray nozzle of the gas supply mobile the rotary speed of aforesaid substrate is risen, when the rotary speed of aforesaid substrate arrives than fast the 2nd regulation rotary speed of above-mentioned the 1st regulation rotary speed, stop from the supply of the gas of above-mentioned top spray nozzle of the gas supply.
40, as claim 23 or 39 described substrate board treatments, it is characterized in that, possess make aforesaid substrate rotary speed with 20 π/3rad/s
2The control part of following acceleration change.
41, a kind of lapping device is characterized in that, possesses: grinding unit, grind aforesaid substrate; Cleaning unit is scrubbed or ultrasonic waves for cleaning aforesaid substrate; And the described substrate board treatment of claim 23.
42, a kind of electroless plating coating apparatus is characterized in that possessing:
Electroless plating applies the unit, implements electroless plating to aforesaid substrate and applies;
Cleaning unit is scrubbed or ultrasonic waves for cleaning aforesaid substrate; And
The described substrate board treatment of claim 23.
43, a kind of substrate board treatment is characterized in that, possesses control system, the following action of this control system control:
Keep substrate and make the substrate maintaining part of its rotation in horizontal plane, rotate aforesaid substrate;
From the top that is configured in aforesaid substrate respectively and the flushing water supply nozzle of below supply with water to aforesaid substrate, cover the upper surface of aforesaid substrate with this water;
By above-mentioned top spray nozzle of the gas supply to the upper surface supply gas of aforesaid substrate the time, from moving above-mentioned spray nozzle of the gas supply to peripheral part near the substrate center;
Simultaneously, water supply nozzle is more being moved by supplying with water to the upper surface of aforesaid substrate on one side on the position of outer radial periphery direction on one side than spray nozzle of the gas supply above above-mentioned, aforesaid substrate is rotated as follows: the rotary speed of the aforesaid substrate when above-mentioned water supply nozzle is positioned at the circumference side of aforesaid substrate, the rotary speed of the aforesaid substrate when being positioned at the central side of aforesaid substrate than above-mentioned water supply nozzle is slow, and the water of the upper surface of aforesaid substrate is removed.
44, a kind of control program is characterized in that, be installed in computer that substrate board treatment is connected in, this substrate board treatment of this computer control, the aforesaid substrate processing unit uses the substrate processing method using same that possesses following operation:
The operation that aforesaid substrate is held in level and rotates in this horizontal plane;
Water covers the operation of the upper surface of aforesaid substrate; With
From the top of aforesaid substrate the upper surface of aforesaid substrate is sprayed the air-flow and the current of the drying usefulness gas of comparing thin on one side with the surface area of aforesaid substrate, on one side when the footpath of aforesaid substrate is upwards kept above-mentioned current and is positioned at the outside than said flow, from the central side of aforesaid substrate operation to circumference side shifting said flow and above-mentioned current;
Control, the rotary speed of the aforesaid substrate when making above-mentioned current be positioned at the circumference side of aforesaid substrate, the rotary speed of the aforesaid substrate when being positioned at the central side of aforesaid substrate than above-mentioned current is slow.
45, a kind of control program is characterized in that, be installed in computer that substrate board treatment is connected in, this substrate board treatment of this computer control, the aforesaid substrate processing unit uses the substrate processing method using same that possesses following operation:
The operation that aforesaid substrate is held in level and rotates in this horizontal plane;
Water covers the operation of the upper surface of aforesaid substrate;
To use the air-flow of gas to spray with the drying that the surface area of aforesaid substrate is compared thin on one side to the upper surface of aforesaid substrate, to spray with the upper surface that the surface area of aforesaid substrate compares the current direction aforesaid substrate thin, upwards keep above-mentioned current on one side is positioned in the outside of the air-flow that above-mentioned upper surface sprays in the footpath of aforesaid substrate, air-flow and above-mentioned current that spray to above-mentioned upper surface to the circumference side shifting from the central side of aforesaid substrate on one side, on one side aforesaid substrate is rotated as follows: the rotary speed of the aforesaid substrate when above-mentioned current are positioned at the circumference side of aforesaid substrate, the rotary speed of the aforesaid substrate when being positioned at the central side of aforesaid substrate than above-mentioned current is slow, removes the operation of water of the upper surface of aforesaid substrate.
46, as claim 44 or 45 described control programs, it is characterized in that the little control of flow of the above-mentioned current when the above-mentioned current of flow-rate ratio of the above-mentioned current when making above-mentioned current be positioned at the circumference side of aforesaid substrate are positioned at the central side of aforesaid substrate.
47, as claim 44 or 45 described control programs, it is characterized in that, carried out before the injection of said flow to the lower surface of aforesaid substrate supply with water and when said flow moves to the control of the lower surface jet drying of aforesaid substrate with gas.
48, as claim 44 or 45 described control programs, it is characterized in that, carry out following control: when making said flow and above-mentioned current from the central part side direction circumference side shifting of aforesaid substrate, the rotary speed of aforesaid substrate is made as the 1st regulation rotary speed, when arriving the peripheral end of aforesaid substrate, above-mentioned current stop above-mentioned current, when said flow arrives the peripheral end of aforesaid substrate, stop in the moving of said flow the rotary speed of aforesaid substrate being risen, when the rotary speed of aforesaid substrate arrives than high the 2nd regulation rotary speed of above-mentioned the 1st regulation rotary speed, stop said flow.
49, as claim 44 or 45 described control programs, it is characterized in that possessing the operation that after removing above-mentioned water, makes the lower surface drying of aforesaid substrate from the upper surface of aforesaid substrate; In the operation of the lower surface drying that makes aforesaid substrate, the rotary speed that makes aforesaid substrate is with 20 π/3rad/s
2Following acceleration change.
50, a kind of manufacture method of semiconductor device is characterized in that, possesses:
Operation by the described substrate processing method using same cleaning base plate of claim 1;
On aforesaid substrate, form the operation of semiconductor device.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005031170 | 2005-02-07 | ||
| JP031170/2005 | 2005-02-07 | ||
| JP295744/2005 | 2005-10-07 |
Publications (2)
| Publication Number | Publication Date |
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| CN107564837A (en) * | 2016-06-30 | 2018-01-09 | 细美事有限公司 | Apparatus and method for handling substrate |
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| CN107564837A (en) * | 2016-06-30 | 2018-01-09 | 细美事有限公司 | Apparatus and method for handling substrate |
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