CN100522423C - Method for preparing nano powdered material of non-ferrous metal by using electronic split process - Google Patents
Method for preparing nano powdered material of non-ferrous metal by using electronic split process Download PDFInfo
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- CN100522423C CN100522423C CNB2006101620543A CN200610162054A CN100522423C CN 100522423 C CN100522423 C CN 100522423C CN B2006101620543 A CNB2006101620543 A CN B2006101620543A CN 200610162054 A CN200610162054 A CN 200610162054A CN 100522423 C CN100522423 C CN 100522423C
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- ferrous metal
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/14—Making metallic powder or suspensions thereof using physical processes using electric discharge
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
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Abstract
The invention relates to a method for producing metal nanometer powder, especially an electric separate method to product color metal nanometer powder, wherein it comprises in inert gas, connecting high current to the color metal wire, to fuse and split it into metal nanometer powder particles. The invention has low cost and low energy consumption, with large specific surface area, etc.
Description
Technical field
The present invention relates to a kind of processing technology of metal nano powder, be specially a kind of electronics disintegrating method and prepare non-ferrous metal nano-powder material method.
Background technology
Non-ferrous metal nano-powder material on the international market utilizes chemical method or physical-chemical process production, processing basically.Chemical method production, the disadvantage that is processed with the non-ferrous metal nano-powder material are; The energy consumption height, pollute that big, powder granule is difficult to control, other powder granule material of nm level is destroyed, is difficult to accomplish to the physical property of non-ferrous metal to some extent, basic production all in μ m and accurate nm scope, really reach the few of nm.So the cost of non-ferrous metal nano-powder material is very high on the international market, high especially fearful of the market price, with regard to copper nanoparticle, the price of 1g is 569 U.S. dollars, is 34 times of 16.88 U.S. dollars of gold on the international market.
Summary of the invention
The present invention is in order to solve the cost height that exists in the preparation metal nano powder particle that exists in the prior art, problem such as contaminated environment and provide a kind of electronics disintegrating method to prepare non-ferrous metal nano-powder material method.
The present invention is realized that by following technical scheme a kind of electronics disintegrating method prepares non-ferrous metal nano-powder material method,
In airtight container, be full of inert gas He continuously, the non-ferrous metal filament material of diameter 1mm-10mm is put into closed container, the voltage of importing 80v-600v (preferred 80-110V) for non-ferrous metal filament material two ends makes it go out 100A in abrupt release---the high electric current of 5000A (preferred 100A-1000A), the wire fusing also forms ganoid spherical particles, and the non-ferrous metal spherical particles flows out into accumulation collection in the closed container simultaneously when inert gas He flows out; Surface treatment then,
When collecting the non-ferrous metal spherical particles, in the accumulation container, charge into 3%-12% oxygen and act on the non-ferrous metal particle surface, make it progressively form the cellular oxidative layer of 1nm-3nm, then in the intermediate frequency furnace with 210 ℃-365 ℃ of the non-ferrous metal nano-powder material that obtains inputs, charge into the inert gas N of cloud point≤5% in the time of 90 minutes at constant temperature
2(nitrogen) is with N
2Gas penetrates into the cellular oxidative layer on non-ferrous metal particle surface comprehensively, thereby forms non-ferrous metal particle protection against oxidation layer.
Principle l utilizes in electronics, the electric theory, the infinitely-great basic principle of short circuit current.Be full of in the airtight container of inert gas He at four.With several diameter 1mm---the non-ferrous metal filament material of 10mm, enter closed container fast with timing rate, at the two ends of closed container is two power supply terminals that insulate with closed container, import 80v for non-ferrous metal filament material two ends---in the time of the voltage of 600v, utilize the effect that discharges and recharges of capacitor, go out 100A in abrupt release---the high electric current of 5000A, make electronics in the non-ferrous metal filament material and hole high speed convection, collision, instant melting under extreme event of overload and explosion.Under the double action of inert gas He and non-ferrous metal physical characteristic, the molten metal fluid can form the very smooth spherical particles in surface in moment.When flowing out by inert gas He, cooled non-ferrous metal spherical particles flows out into simultaneously in the other closed container and accumulates.---12% oxygen (nonferrous materials difference, the amount of charging into of oxygen are different) acts on the non-ferrous metal particle surface, progressively forms 1nm---the cellular oxidative layer of 3nm that charges into 3% in the container in accumulation.Then, in batches with 210 ℃ of non-ferrous metal nano-powder material inputs---in 365 ℃ the intermediate frequency furnace, charge into the inert gas N of cloud point≤5% in the time of 90 minutes, utilize gas to see through principle, N at constant temperature
2Gas penetrates into the cellular oxidative layer on non-ferrous metal particle surface comprehensively, thereby forms non-ferrous metal particle protection against oxidation layer.
By, in 17 indexs of the non-ferrous metal nano powder granular material of detection " electronics disintegrating method " production and processing of the comprehensive FAB of Korea S academy of sciences nanometer center, Korea Atomic Energy Research Institute, U.S. NOG nano material inspection center, CMR inspection center of Chinese Central South University, Chinese Zhongshan University nano material major test chamber, 7 main indexs have surpassed that the like product on the international market, particularly anti oxidation time and powder body material oxygenation efficiency on average exceed 69 hours respectively than the like product of the U.S., Japan, Russia, Korea S and low 51.7%.And production cost is low, energy consumption is little, pollution-free, obvious advantages such as grain shape good, specific area is big, good fluidity.
The technology of the present invention advantage, the technical advantage that the non-ferrous metal nano powder granular material was produced, was processed with to " electronics disintegrating method " is as follows:
1, production cost is low.Integrated cost has only 1/3 of the U.S., Korea S's like product.2, energy consumption is little.Comprehensive energy consumption be the Russia, Japan, the U.S. 41%.3, grain shape is good.The particle of powder body material all is a spheroid form.4, mobile (50/s) on average exceeds 11g than the U.S., Germany, Japan.5, apparent density (g/cm
3) on average lack 0.012g than the U.S., Germany.6, specific area (m
2/ g) exceed 2.35% than the U.S., Germany, Russia, Korea S, Japan.7, anti oxidation time (H) on average exceeds 69H than international like product.8, oxygenation efficiency (%) on average hangs down 51.7% than international like product.10, distribution of particles is wide, and the like product distribution of particles of Russia, Korea S, the U.S. is generally at 35nm---between the 152nm.The nano-powder particle that " non-ferrous metal electronics disintegrating method " produces can be accomplished 10nm---between the one 1 μ m.11, " non-ferrous metal electronics disintegrating method " process applications is very extensive, can the most non-ferrous metal nanometer of production and processing, the micro-powder material.But also can production and processing ferrous metal powder body material.
Description of drawings
150,000 times of electromicroscopic photographs of copper nanoparticle that Fig. 1 produces for the present invention
The specific embodiment
Embodiment 1:
A kind of electronics disintegrating method prepares non-ferrous metal nano-powder material method,
In airtight container, be full of inert gas He continuously, the non-ferrous metal filament material of diameter 1mm is put into closed container, the voltage of importing 80v for non-ferrous metal filament material two ends makes it go out the high electric current of 100A in abrupt release, the wire fusing also forms ganoid spherical particles, and the non-ferrous metal spherical particles flows out into accumulation collection in the closed container simultaneously when inert gas He flows out; Surface treatment then,
When collecting the non-ferrous metal spherical particles, in the accumulation container, charge into 3% oxygen and act on the non-ferrous metal particle surface, make the cellular oxidative layer that progressively forms 1nm, then in the intermediate frequency furnace with 210 ℃ of the non-ferrous metal nano-powder material that obtains inputs, charge into the inert gas N of cloud point≤5% in the time of 90 minutes at constant temperature
2(nitrogen) is with N
2Gas penetrates into the cellular oxidative layer on non-ferrous metal particle surface comprehensively, thereby forms non-ferrous metal particle protection against oxidation layer.
Non-ferrous metal of the present invention is: non-ferrous metals such as copper, aluminium, magnesium, titanium, zinc.
Embodiment 2: a kind of electronics disintegrating method prepares non-ferrous metal nano-powder material method,
In airtight container, be full of inert gas He continuously, the non-ferrous metal filament material of diameter 2mm is put into closed container, the voltage of importing 110v for non-ferrous metal filament material two ends makes it go out the high electric current of 1000A in abrupt release, the wire fusing also forms ganoid spherical particles, and the non-ferrous metal spherical particles flows out into accumulation collection in the closed container simultaneously when inert gas He flows out; Surface treatment then,
When collecting the non-ferrous metal spherical particles, in the accumulation container, charge into 5% oxygen and act on the non-ferrous metal particle surface, make the cellular oxidative layer that progressively forms 3nm, then in the intermediate frequency furnace with 270 ℃ of the non-ferrous metal nano-powder material that obtains inputs, charge into the inert gas N of cloud point≤5% in the time of 90 minutes at constant temperature
2(nitrogen) is with N
2Gas penetrates into the cellular oxidative layer on non-ferrous metal particle surface comprehensively, thereby forms non-ferrous metal particle protection against oxidation layer.
Embodiment 3:
A kind of electronics disintegrating method prepares non-ferrous metal copper nano-powder material method,
In airtight container, be full of inert gas He continuously, the non-ferrous metal filament material of diameter 7mm is put into closed container, the voltage of importing 400v for non-ferrous metal copper filament material two ends makes it go out the high electric current of 2500A in abrupt release, the fusing of copper wire also forms ganoid spherical particles, and the non-ferrous metal copper spherical particles flows out into accumulation collection in the closed container simultaneously when inert gas He flows out; Surface treatment then,
When collecting the non-ferrous metal copper spherical particles, in the accumulation container, charge into 10% oxygen and act on the non-ferrous metal copper particle surface, make the cellular oxidative layer that progressively forms 2nm, then in the intermediate frequency furnace with 320 ℃ of the non-ferrous metal copper nano-powder material that obtains inputs, charge into the inert gas N of cloud point≤5% in the time of 90 minutes at constant temperature
2(nitrogen) is with N
2Gas penetrates into the cellular oxidative layer of non-ferrous metal copper particle surface comprehensively, thereby forms non-ferrous metal copper particle protection against oxidation layer.
Embodiment 4, and a kind of electronics disintegrating method prepares non-ferrous metal nano-powder material method,
In airtight container, be full of inert gas He continuously, the non-ferrous metal filament material of diameter 10mm is put into closed container, the voltage of importing 600v for non-ferrous metal filament material two ends makes it go out the high electric current of 5000A in abrupt release, the wire fusing also forms ganoid spherical particles, and the non-ferrous metal spherical particles flows out into accumulation collection in the closed container simultaneously when inert gas He flows out; Surface treatment then,
When collecting the non-ferrous metal spherical particles, in the accumulation container, charge into 12% oxygen and act on the non-ferrous metal particle surface, make the cellular oxidative layer that progressively forms 3nm, then in the intermediate frequency furnace with 365 ℃ of the non-ferrous metal nano-powder material that obtains inputs, charge into the inert gas N of cloud point≤5% in the time of 90 minutes at constant temperature
2(nitrogen) is with N
2Gas participates in the cellular oxidative layer on non-ferrous metal particle surface comprehensively, thereby forms non-ferrous metal particle protection against oxidation layer.
Non-ferrous metal of the present invention is: non-ferrous metals such as copper, aluminium, magnesium, titanium, zinc.
Claims (3)
1, a kind of electronics disintegrating method prepares non-ferrous metal nano-powder material method, it is characterized in that: in airtight container, be full of inert gas He continuously, the non-ferrous metal filament material of diameter 1mm-10mm is put into closed container, the voltage of importing 80v-600v for non-ferrous metal filament material two ends makes it go out 100A in abrupt release---the high electric current of 5000A, the wire fusing also forms ganoid spherical particles, the non-ferrous metal spherical particles flows out into accumulation collection in the closed container simultaneously when inert gas He flows out, when collecting the non-ferrous metal spherical particles, in the accumulation container, charge into 3%-12% oxygen and act on the non-ferrous metal particle surface, make it progressively form the cellular oxidative layer of 1nm-3nm, then in the intermediate frequency furnace with 210 ℃-365 ℃ of the non-ferrous metal nano-powder material that obtains inputs, charge into the gas N of cloud point≤5% in the time of 90 minutes at constant temperature
2, with N
2Gas penetrates into the cellular oxidative layer on non-ferrous metal particle surface comprehensively, thereby forms non-ferrous metal particle protection against oxidation layer.
2, electronics disintegrating method according to claim 1 prepares non-ferrous metal nano-powder material method, it is characterized in that: non-ferrous metal is: copper, aluminium, magnesium, titanium, zinc.
3, electronics disintegrating method according to claim 1 prepares non-ferrous metal nano-powder material method, it is characterized in that: the voltage of importing 80v-110v for non-ferrous metal filament material two ends makes it go out 100A in abrupt release---the high electric current of 1000A.
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CNB2006101620543A CN100522423C (en) | 2006-12-11 | 2006-12-11 | Method for preparing nano powdered material of non-ferrous metal by using electronic split process |
PCT/CN2007/003372 WO2008071067A1 (en) | 2006-12-11 | 2007-11-29 | Method for preparing non-ferrous metal nanopowder by electrical explosion process |
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CNB2006101620543A CN100522423C (en) | 2006-12-11 | 2006-12-11 | Method for preparing nano powdered material of non-ferrous metal by using electronic split process |
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CN1962134A CN1962134A (en) | 2007-05-16 |
CN100522423C true CN100522423C (en) | 2009-08-05 |
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WO (1) | WO2008071067A1 (en) |
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CN100484662C (en) * | 2006-12-11 | 2009-05-06 | 王惠民 | Metal micron nano particle cladding process |
CN100522423C (en) * | 2006-12-11 | 2009-08-05 | 王惠民 | Method for preparing nano powdered material of non-ferrous metal by using electronic split process |
CN110241660B (en) * | 2019-05-17 | 2021-10-29 | 五河县宜然知识产权服务有限公司 | Processing method for recycling waste packaging paper |
CN114210988B (en) * | 2021-11-17 | 2023-09-15 | 广东银纳科技有限公司 | Preparation method of refractory metal spherical particles |
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IL148073A0 (en) * | 1999-09-03 | 2002-09-12 | American Inter Metallics Inc | Apparatus and methods for the production of powders |
KR100394390B1 (en) * | 2001-05-29 | 2003-08-14 | 한국원자력연구소 | Equipment for Production of Metal Nano Powders By Electrical Explosion of Wire and it's Method |
US7803235B2 (en) * | 2004-01-08 | 2010-09-28 | Cabot Corporation | Passivation of tantalum and other metal powders using oxygen |
CN100522423C (en) * | 2006-12-11 | 2009-08-05 | 王惠民 | Method for preparing nano powdered material of non-ferrous metal by using electronic split process |
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Non-Patent Citations (4)
Title |
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电爆金属丝产生纳米金属氧化物粉末的研究. 伍友成.中国工程物理研究院学位论文. 2005 |
电爆金属丝产生纳米金属氧化物粉末的研究. 伍友成.中国工程物理研究院学位论文. 2005 * |
纳米金属材料研究进展. 刘筱薇等.热加工工艺,第2001年第3期. 2001 |
纳米金属材料研究进展. 刘筱薇等.热加工工艺,第2001年第3期. 2001 * |
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