CN100514841C - Device in one-way on state - Google Patents
Device in one-way on state Download PDFInfo
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- CN100514841C CN100514841C CNB021499608A CN02149960A CN100514841C CN 100514841 C CN100514841 C CN 100514841C CN B021499608 A CNB021499608 A CN B021499608A CN 02149960 A CN02149960 A CN 02149960A CN 100514841 C CN100514841 C CN 100514841C
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Abstract
The invented device includes metal-oxide semiconductor field-effect transistor (MOSFET) and driving device. Source and drain electrodes of MOSFET is as P pole and N pole of one-way conduction device. Driving device such as comparator or amplification circuit is utilized to detect potential difference between electrodes of source and drain of MOSFET. When potential at P pole is higher than potential at N pole, the driving device 150 outputs a driving potential to grid electrode of MOSFET, making it on. If potential at P pole is lower than potential at N pole, the driving device is not able to output driving voltage needed to start MOSFET. Thus, one-way conduction device is off. The one-way conduction device possesses property of conduction in one-way.
Description
(1) technical field
The relevant a kind of Device in one-way on state of the present invention, and particularly have a low forward Device in one-way on state of voltage relevant for a kind of.
(2) background technology
In electronic circuit, the use of diode (diode) has quite long history, and the characteristic of its unidirectional conducting often is applied in all kinds of circuit, and importance is real in resistance and electric capacity, is indispensable critical elements.Though the application of diode is very extensive, what can not dare not or would not speak up is, diode exists defective in essence always, and the forward voltage when being exactly conducting still dislikes too high.
General diode its forward voltage be about about 0.7 volt, this is a physical characteristic and can't eliminating.Can make the Schottky diode (SchottkyDiode) that forward voltage is lower though rely on the improvement of manufacture of semiconductor for support, but the forward voltage that Schottky diode is about 0.4 volt, for unidirectional on state characteristic of many needs and the lower operational environment of voltage, the power loss that expends on transistor still can't be satisfactory.Therefore, reality is necessary to develop and the forward low Device in one-way on state of voltage pole, to reduce power loss, improves the efficient that power supply uses.
(3) summary of the invention
In view of this, the purpose of this invention is to provide a kind of Device in one-way on state, realize unidirectional on state characteristic with extremely low forward bias voltage drop.
According to purpose of the present invention, a kind of Device in one-way on state is proposed, being summarized as follows of this device:
Device in one-way on state comprises mos field effect transistor and drive unit, the source electrode of mos field effect transistor and drain are respectively as the N utmost point and the P utmost point of Device in one-way on state, drive unit for example is comparator or amplifying circuit etc., in order to detect the potential difference between mos field effect transistor drain and source electrode.When the P electrode potential is higher than the N electrode potential, drive unit is just exported one and is driven current potential to the gate of mos field effect transistor and make its conducting, after the mos field effect transistor conducting, electric current can flow to the N utmost point through mos field effect transistor by the P utmost point.Otherwise if the P electrode potential is lower than the N electrode potential, drive unit just can't be exported the required driving current potential of opening metal oxide semiconductor field effect transistor, so the P utmost point and N interpolar are in off state, that is Device in one-way on state is at this moment for closing.
For above-mentioned purpose of the present invention, characteristics and advantage can be become apparent, below be elaborated especially exemplified by a preferred embodiment and conjunction with figs..
(4) description of drawings
Fig. 1 is the Device in one-way on state calcspar that is provided according to embodiments of the invention one.
Fig. 2 is the pin definition schematic diagram of operational amplifier.
The Device in one-way on state circuit diagram that Fig. 3 is provided according to embodiments of the invention one.
Fig. 4 is the voltage-to-current curve of Device in one-way on state.
Fig. 5 is that Device in one-way on state that embodiment one is provided is applied to the situation in the power supply circuit.
Fig. 6 is the Device in one-way on state circuit diagram that is provided according to embodiments of the invention two.
(5) embodiment
Mos field effect transistor (Metal Oxide Semiconductor FieldEffect Transistor, MOSFET) when conducting, forward voltage pole between drain (drain) and source electrode (source) is low, if can utilize mos field effect transistor to realize the characteristic of unidirectional conducting, just can replace diode becomes good Device in one-way on state.As everyone knows, diode has the P utmost point and the N utmost point, ideally, diode gets final product conducting (turn on is equivalent to short circuit) when the P electrode potential is higher than the N electrode potential, and diode is closed (turn off when the P electrode potential is lower than the N electrode potential, be equivalent to open circuit), so the meaning diode has unidirectional on state characteristic.Device in one-way on state provided by the present invention has the P utmost point and the N utmost point equally, and possesses as the unidirectional on state characteristic as the diode, hereinafter detailed discussion will be arranged.
[embodiment one]
Please refer to Fig. 1, it is a kind of Device in one-way on state calcspar that is provided according to embodiments of the invention one.Device in one-way on state comprises mos field effect transistor 110 and drive unit 150, the drain of mos field effect transistor 110 and source electrode be respectively as the P utmost point of Device in one-way on state and the N utmost point (as for what person for the P utmost point or the N utmost point when deciding on design requirement, hereinafter will further specify), 150 of drive units are in order to detect the potential difference between mos field effect transistor 110 source electrodes and drain.When the P electrode potential is higher than the N electrode potential, drive unit 150 is just exported one and is driven current potential DS and make its conducting to the gate (gate) of mos field effect transistor 110, after the mos field effect transistor conducting, electric current can flow to the N utmost point through mos field effect transistor 110 by the P utmost point.Otherwise if the P electrode potential is lower than the N electrode potential, drive unit 150 just can't be exported the required driving current potential DS of opening metal oxide semiconductor field effect transistor 110, so the P utmost point and N interpolar are in off state, that is Device in one-way on state is at this moment for closing.
The circuit kind that meets above-mentioned drive unit 150 design requirements is a lot, and for example comparator or amplifying circuit etc. all can as long as can reach the function of drive unit 150 of the present invention; And operational amplifier (operationamplifier is in order to realize the common component of comparator and amplifying circuit OP), is example so sentence operational amplifier, its pin is defined be illustrated.Please refer to Fig. 2, it is the pin definition schematic diagram of operational amplifier.Operational amplifier 200 has non-inverting input 1, inverting input 3, high power end 5, low power end 2 and output 4.Non-inverting input 1 is a signal input part with inverting input 3, and output 4 is a signal output part.High power end 5 and low power end 2 need be connected to high power supply V+ and low power supply V-respectively, to obtain the required power supply of operational amplifier 200 operations.
Then please refer to Fig. 3, it is a kind of Device in one-way on state circuit diagram that is provided according to embodiments of the invention one.Device in one-way on state comprises mos field effect transistor 310 and the drive unit 350 that couples mutually, mos field effect transistor 310 is P passage (P channel) transistor (being PMOS), and its source S and drain D are respectively as the N utmost point and the P utmost point of Device in one-way on state.Drive unit 350 is one by operational amplifier 200 and resistance R 1, and the inverting amplifier that R2 formed belongs to a kind of of amplifying circuit.Operational amplifier 200 has non-inverting input 1, inverting input 3, high power end 5, low power end 2 and output 4.Non-inverting input 1 is coupled to source S, and output 4 is coupled to gate G, and inverting input 3 is coupled to an end of resistance R 1, and the other end of resistance R 1 is coupled to drain D.One end of resistance R 2 is coupled to inverting input 3, and the other end of resistance R 2 is coupled to output 4.High power end 5 is coupled to source S, low power end 2 ground connection, to obtain the required power supply of operational amplifier 200 operations.
Below with the operation principle of key diagram 3.The P utmost point of Device in one-way on state and the electrical characteristic of the N utmost point are equivalent to the P utmost point and the N utmost point of diode, and hypothesis N pole tension is 5V, resistance during mos field effect transistor 310 conductings between drain D and source S is 0.05 ohm, and resistance R 1 is 10K ohm, and resistance R 2 is 5M ohm.When forward bias voltage drop, P ultimate ratio N pole tension height, according to the amplification principle of inverting amplifier (R2/R1) * Vi=-Vo as can be known, wherein Vi is the input voltage of operational amplifier 200, Vo is an output voltage.The current potential of gate G is-5 volts (non-inverting input 1 with operational amplifier 200 is a reference point) when supposing the complete conducting of mos field effect transistor 310, because the current potential of gate G is the output voltage of operational amplifier 200, for the output voltage that makes operational amplifier 200 satisfies design requirement, so the P pole tension need be higher than the few 10mV (5M/10K*10mV=-5V) of N best, makes mos field effect transistor 310 conducting fully.Since mos field effect transistor 310 exactly fully during conducting forward current approximate 0.2 ampere of (10mV/0.05 Ω=0.2A), can make mos field effect transistor 310 complete conductings greater than 0.2 ampere so work as forward current as can be known.In other words, 0.05 ohm of the forward voltage (VF) of the P best N utmost point=forward current *, if forward current is 1A, pairing forward voltage only is 0.05 volt, forward voltage (about 0.4V) than Schottky diode is low a lot of, and the voltage-to-current curve of this Device in one-way on state as shown in Figure 4.Because above-mentioned forward voltage can adjust with R2 according to resistance R 1, can tune to unidirectional conducting state extremely low even that convergence is desirable.
Please refer to Fig. 4, when forward current less than 0.2 ampere-hour mos field effect transistor 310 conducting fully, but increase along with forward current reduces transistor impedance meeting, transistor will be closed fully when electric current is zero.Therefore, when the forward bias voltage drop of the P utmost point and N interpolar voltage-to-current and non-linear relation between 0 to 10mV the time, and actual curve will be determined by transistor characteristic.
When N ultimate ratio P pole tension is high (this moment be reverse bias), the current potential of non-inverting input 1 can be than inverting input 3 height, and operational amplifier 200 will be exported high potential mos field effect transistor 310 is closed fully at this moment.Therefore Device in one-way on state is with not conducting during reverse bias, and only conducting when forward bias voltage drop is so possess unidirectional on state characteristic.
In addition, resistance R 1, the gate transition voltage of R2 and mos field effect transistor 310 has determined forward voltage cutting point, can be designated as: voltage cutting point=gate transition voltage * (R1/R2) forward, forward the voltage cutting point is 10mV in the present embodiment.On practice, can improve voltage cutting point forward make its greater than operational amplifier make up for (Offset) voltage, to guarantee not have the generation of backward current, for example adjust resistance R 1, the ratio of R2 is exactly a feasible mode.
Then please refer to Fig. 5, the Device in one-way on state that it illustrates embodiment one is provided is applied to the situation in the power supply circuit.Battery BT1 and battery BT2 are in order to providing load required power supply, and this load for example is a notebook computer.When the current potential of battery BT1 is higher than the current potential of battery BT2, since this moment Device in one-way on state 500 forward bias voltage drop and Device in one-way on state 550 reverse bias, so Device in one-way on state 500 conductings and Device in one-way on state 550 is closed, load can obtain the power supply supply by the higher battery BT1 of current potential.Otherwise when if the current potential of battery BT1 is lower than the current potential of battery BT2, load can obtain the power supply supply by the higher battery BT2 of current potential.
[embodiment two]
Then please refer to Fig. 6, it is a kind of Device in one-way on state circuit diagram that is provided according to embodiments of the invention two.Device in one-way on state comprises mos field effect transistor 610 and the drive unit 650 that couples mutually, mos field effect transistor 610 is N passage (N channel) transistor (being NMOS), and its source S and drain D are respectively as the P utmost point and the N utmost point of Device in one-way on state.Drive unit 650 is one by operational amplifier 200 and resistance R 1, the inverting amplifier that R2 formed, wherein non-inverting input 1 is coupled to source S, and output 4 is coupled to gate G, inverting input 3 is coupled to an end of resistance R 1, and the other end of resistance R 1 is coupled to drain D.One end of resistance R 2 is coupled to inverting input 3, and the other end of resistance R 2 is coupled to output 4.High power end 5 is coupled to the power supply V+ of the current potential that is higher than source S, and low power end 2 is coupled to source S, to obtain the required power supply of operational amplifier 200 operations.
Embodiment two does not exist together with embodiment one maximum, be that mos field effect transistor 610 is NMOS, and high power end 5 is to be coupled to power supply V+.In other words, embodiment one is applicable to that the power supply of operational amplifier is lower than the environment of N electrode potential, and embodiment two is applicable to that the power supply of operational amplifier is higher than the environment of P electrode potential.In embodiment two, the forward voltage * R2/R1 of the output voltage of operational amplifier 200=P utmost point and N interpolar (non-inverting input 1 with operational amplifier 200 is a reference point), if the gate transition voltage of mos field effect transistor 610 is 5 volts, resistance R 1 is 10K ohm, resistance R 2 is 5M ohm, and then can knowing by inference forward, the voltage cutting point only is about 10mV.
The Device in one-way on state that the above embodiment of the present invention disclosed has the following advantages at least:
Thus the diode equivalent circuit formed of circuit forward voltage pole is low.
2. converse electrical leakage current ratio Schottky diode is low.
3. forward conducting and backward stop are very accurate, do not have reverse big current situation.
Mos field effect transistor by forward saturation region to the service area again to reverse cut-off region, be that asymptotic expression changes, so operational amplifier does not have the oscillatory instability phenomenon during near zero point.
5. applying to rectification circuit can raise the efficiency.
In sum; though the present invention is disclosed with some embodiment; yet it is not in order to limit the present invention; any personnel that have the knack of present technique without departing from the spirit and scope of the present invention; when can doing various changes and replacement, so protection scope of the present invention is when looking being as the criterion that accompanying Claim defines.
Claims (4)
1. a Device in one-way on state has a P utmost point and a N utmost point, it is characterized in that this Device in one-way on state comprises:
One mos field effect transistor, this mos field effect transistor is the P channel transistor, and has one source pole, a drain and a gate, and wherein, this drain is as this P utmost point, and this source electrode is as this N utmost point; And
One drive unit is coupled to this mos field effect transistor, and in order to this mos field effect transistor of unidirectional conducting, this drive unit comprises:
One operational amplifier has an inverting input, a non-inverting input and an output, and this non-inverting input is coupled to this source electrode, and this output is coupled to this gate;
One first resistance, an end of this first resistance is coupled to this drain, and the other end of this first resistance is coupled to this inverting input; And
One second resistance, an end of this second resistance is coupled to this inverting input, and the other end of this second resistance is coupled to this output.
2. Device in one-way on state as claimed in claim 1 is characterized in that, this operational amplifier also comprises a high power end and a low power end, and this high power end is coupled to this source electrode, and this low power end couples ground.
3. a Device in one-way on state has a P utmost point and a N utmost point, it is characterized in that this Device in one-way on state comprises:
One mos field effect transistor, this mos field effect transistor is the N channel transistor, and has one source pole, a drain and a gate, and wherein, this drain is as this N utmost point, and this source electrode is as this P utmost point; And
One drive unit is coupled to this mos field effect transistor, and in order to this mos field effect transistor of unidirectional conducting, this drive unit comprises:
One operational amplifier has an inverting input, a non-inverting input and an output, and this non-inverting input is coupled to this source electrode, and this output is coupled to this gate;
One first resistance, an end of this first resistance is coupled to this drain, and the other end of this first resistance is coupled to this inverting input; And
One second resistance, an end of this second resistance is coupled to this inverting input, and the other end of this second resistance is coupled to this output.
4. Device in one-way on state as claimed in claim 3 is characterized in that, this operational amplifier also comprises a high power end and a low power end, and this low power end is coupled to this source electrode, and the current potential of this high power end is higher than the current potential of this source electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021499608A CN100514841C (en) | 2002-11-08 | 2002-11-08 | Device in one-way on state |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021499608A CN100514841C (en) | 2002-11-08 | 2002-11-08 | Device in one-way on state |
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| Publication Number | Publication Date |
|---|---|
| CN1499710A CN1499710A (en) | 2004-05-26 |
| CN100514841C true CN100514841C (en) | 2009-07-15 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB021499608A Expired - Lifetime CN100514841C (en) | 2002-11-08 | 2002-11-08 | Device in one-way on state |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI589107B (en) * | 2016-08-19 | 2017-06-21 | 廣達電腦股份有限公司 | One-direction conduct device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113472335A (en) * | 2021-07-12 | 2021-10-01 | 电子科技大学 | One-way conduction circuit of alternating current signal |
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2002
- 2002-11-08 CN CNB021499608A patent/CN100514841C/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI589107B (en) * | 2016-08-19 | 2017-06-21 | 廣達電腦股份有限公司 | One-direction conduct device |
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| Publication number | Publication date |
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| CN1499710A (en) | 2004-05-26 |
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Granted publication date: 20090715 |