CN100514694C - Logic part and magnetic logic part array based on the dual potential base magnetic tunnel junction - Google Patents
Logic part and magnetic logic part array based on the dual potential base magnetic tunnel junction Download PDFInfo
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Abstract
The invention relates to a logical element based on double potential barrier magnetic tunnel junction, which comprises four input signal lines, an output signal line and a tunnel junction unit; the current intensity passing through each input line are all the same, repectively allocating '0' and '1' to them, and using the combination of input signals A, B, C, D, to decide the magnetization direction of magnetosphere in the tunnel junction, and then taking the size of the magnetoresistance effect through the double potential barrier magnetic tunnel junction as the output signal; it is characterized in that the described tunnel junction unit is double potential barrier magnetic tunnel junction unit, which comprises: a bottom magnetosphere, a first tunnel barrier layer, an intermediate magnetosphere, a second tunnel barrier layer and a top magnetosphere. The invention also relates to a magnetic logical element array that arranges the above-mentioned arbitrary a plurality of magnetic logical elements according to the array, and makes logic input signala or read current flow through the magnetic logical element. The advantage of the invention lies in the miniaturization of the logic circuit and a high density integration, which is helpful for industrialization.
Description
Technical field
The invention belongs to magnetic logic field, specifically relate to a kind of digital storage technique of utilizing MRAM storage, the logic element that provides for logic device and logical circuit based on dual-potential magnetic tunnel, and array the magnetic logic elements array.
Background technology
Mainly depend on the electric charge of electronics at present based on transistorized integrated circuit, evaluation work.But since eighties 21 century, giant magnetoresistance effect was found, spintronics caused people's extensive concern, and people want to control electronic spin and design and make new device.Some research groups begin to explore the brand-new processor of a class, and they propose, and magnetic mnemon also can design and be used for calculating.Selection by logical operation and carry out this two steps, these devices both can become programmable logic device, also can become the memory storage of common transient state electronics output.
People such as Cowbum have proposed a kind of new equipment structure by the nano-magnetic powder structure, available its execution magnetic logic function (Cowbum and Welland, " science " the 287th volume 1466-1468 page or leaf).The William C.Black of the state university in Iowa in 2000, Jr. and B.Das propose a kind of magnetic logic based on magneto resistance effect, and after 2 years, research company of Siemens demonstrates a kind of reconfigurable magnetic logic gate component by experiment.And then, Berlin Paul Drude research institute has proposed a kind of simpler method and has realized the switching [A.Ney, C.Pampuch, R.Koch and K.H.Pioog, " nature " 425th volume 485-487 page or leaf] of various computing elements between the Different Logic state.Its design as shown in Figure 1, the magnetic gate contains three incoming lines, i.e. its intensity of electric current that flows through among incoming line A, B, the C, every incoming line is all identical.Though in this magnetoresistive element, have only two kinds of output numerical value (0 and 1), four kinds of different initial conditions are arranged, wherein two kinds is parastate, two kinds is antiparallel state, so just can configure different logic states.A single magnetic logic elements like this can be represented following basic logic function, as AND-function (AND), OR-function (OR), NAND function (NAND) and nondisjunction function (NOR).Can construct any known logical construction by suitable combination.
Yet, need two such logical blocks at least such as logic functions such as AND-OR INVERTER or inclusive ORs if form one.Existing magnetic logic does not also solve the problem of minification, does not solve the problem how a plurality of elements constitute yet, so for the miniaturization that needs the magnetic logical circuit in the practical application from now on, integrated certain limitation arranged.
Summary of the invention
The objective of the invention is to overcome existing magnetic logic and be unfavorable for miniaturization and integrated defective, thereby a kind of small-sized, that have a plurality of logic functions, logic element based on dual-potential magnetic tunnel that can carry out logical process is provided.
Another object of the present invention provide a kind of with above-mentioned array of logic elements change based on dual-potential magnetic tunnel the magnetic logic elements array.
The objective of the invention is to realize by the following technical solutions:
The invention provides a kind of logic element based on dual-potential magnetic tunnel, as shown in Figure 2, this logic element comprises four input signal cables (A, B, C and D), output signal line and tunneling junction cell; The current strength that flows through in every input signal cable is all identical, respectively " 0 " and " 1 " is distributed to them, utilize the combination of input signal cable A, B, C, D, the magnetospheric direction of magnetization in the decision tunnel junction, the size of magneto-resistance effect that will be by dual-potential magnetic tunnel is as output signal; It is characterized in that:
Described tunneling junction cell is the dual-potential magnetic tunnel unit, and as shown in Figure 3, it comprises:
A lower magnetic layer FM1;
A first tunnel barrier layer I1 who is formed on the described lower magnetic layer;
An intermediate magnetic layer FM2 who is formed on described first tunnel barrier layer;
A second tunnel barrier layer I2 who is formed on the described intermediate magnetic layer;
A upper magnetic layer FM3 who is formed on second tunnel barrier layer;
The composition material of described three magnetospheres (lower magnetic layer FM1, intermediate magnetic layer FM2 and upper magnetic layer FM3) is ferrimagnet, semimetal magnetic material or magnetic semiconductor material, and each magnetospheric thickness is 2~10nm; Wherein, the coercive force of lower magnetic layer FM1 and FM3 can be the same or different, and the direction of magnetization of intermediate magnetic layer FM2 is freely, and it is made of the less soft magnetic material of coercive force;
Above-mentioned ferrimagnet comprises: 3d transition group magnetic metals such as Fe, Co, Ni, ferromagnetic alloies such as Co-Fe, Co-Fe-B, Ni-Fe, Co-Fe-Ni, Gd-Y, rare earth metal and ferrimags thereof such as Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er;
Above-mentioned semimetal magnetic material comprises: Fe
3O
4, CrO
2, La
0.7Sr
0.3MnO
3Or Co
2Heussler alloys such as MnSi;
Above-mentioned magnetic semiconductor material comprises: Fe, Co, Ni or V; Perhaps ZnO, the TiO that mixes for Mn
2, HfO
2Or SnO
2, perhaps GaAs, InAs, GaN or the ZnTe that mixes for Mn;
The composition material of described tunnel barrier layer I1 and I2 is MgO, Al
2O
3, AlN, Ta
2O
5Or HfO
2Deng, its thickness is 0.8~3.0nm.
Above-mentioned tunneling junction cell as shown in Figure 4, can also be:
Under described lower magnetic layer FM1, also comprise the first antiferromagnetic layer AFM1;
On described upper magnetic layer FM3, also comprise the second antiferromagnetic layer AFM2;
The composition material of described antiferromagnetic layer (AFM1 and AFM2) comprise make by the alloy material of Ir, Fe, Rh, Pt or Pd and Mn or antiferromagnetic materials such as CoO, NiO, PtCr, its thickness is 7~20nm.
Above-mentioned tunneling junction cell as shown in Figure 5, can also be:
Under described lower magnetic layer FM1, also comprise Ru layer, the 3rd magnetosphere FM11 and the first antiferromagnetic layer AFM1 successively;
On described upper magnetic layer FM3, also comprise Ru layer, the 4th magnetosphere FM31 and the second antiferromagnetic layer AFM2 successively;
The composition material of described antiferromagnetic layer (AFM1 and AFM2) comprise make by the alloy material of Ir, Fe, Rh, Pt or Pd and Mn or antiferromagnetic materials such as CoO, NiO, PtCr, its thickness is 7~20nm;
The composition material of described the 3rd magnetosphere FM11 and the 4th magnetosphere FM31 is ferrimagnet, semimetal magnetic material or magnetic semiconductor material, and each magnetospheric thickness is 2~10nm;
The thickness of described Ru layer is 0.7~0.9nm.
In above-mentioned logic element provided by the invention based on dual-potential magnetic tunnel, magnetoresistive element has two kinds of numerical value outputs (0, with 1), but multiple different initial condition is arranged, two kinds of parallel state wherein, two kinds of antiparallel state and several intermediatenesses completely can configure multiple different logic state like this.At first, allow electric current flow through two, three or four incoming lines, thereby the polarity of logic element is set at a certain in the above-mentioned various states.Second step then was to carry out this logical operation by only activating top two incoming lines (being A and B) or three incoming lines (A, B and C) or four incoming lines (A, B, C and D).Have only when two, three or four incoming lines to have produced the identical magnetic field of polarity during by electric current, a kind of selected initial condition just can be reversed, and makes output valve from " 1 " change " 0 ", thereby obtains multiple logic state.
The invention provides a kind of with above-mentioned array of logic elements change based on dual-potential magnetic tunnel the magnetic logic elements array, be with above-mentioned any a plurality of magnetic logic elements according to arrayed, and make logic input signal or read current flow through magnetic logic elements.Its working mode figure and magnetic logic elements array schematic diagram are respectively as shown in Figure 6 and Figure 7.
Provided by the inventionly be: only use a single magnetic logic elements can represent the basic logic function of prior art, as AND-function (AND), OR-function (OR), NAND function (NAND) and nondisjunction function (NOR) based on the logic element of dual-potential magnetic tunnel and the advantage of magnetic logic elements array; In addition, can also express distance function (XOR) etc., and can provide appropriate combination or any other known logical function of the OR function that has suitable interconnection, AND function, NOT function, any above-mentioned function, thereby make logical circuit miniaturization and high density integrated, its industrialized advantage is extremely many.
Description of drawings
Fig. 1 is the working mode figure of the magnetic logic elements of prior art;
Fig. 2 is the working mode figure of the magnetic logic elements based on bibarrier tunnel junction of the present invention;
Fig. 3 is first kind of magnetic logic elements core texture schematic diagram based on bibarrier tunnel junction of the present invention;
Fig. 4 is second kind of magnetic logic elements core texture schematic diagram based on bibarrier tunnel junction of the present invention;
Fig. 5 is the third magnetic logic elements core texture schematic diagram based on bibarrier tunnel junction of the present invention;
Fig. 6 is the working mode figure that is used for the magnetic logic elements array of the present invention;
Fig. 7 is a kind of magnetic logic elements array schematic diagram of the present invention.
Embodiment
As shown in Figure 3, first kind of magnetic logic elements core texture based on dual-potential magnetic tunnel provided by the invention comprises following five layers: three layers of ferromagnetic layer FM1, FM2 and FM3, and at three layers of ferromagnetic layer therebetween, two tunnel barrier layer I1 and I2.Magnetosphere FM1 and FM3 are made of bigger " hard magnetic layer " CoFe of coercive force, and its thickness is 3nm, and magnetosphere FM2 constitutes 10nm by less " soft ferromagnetic layer " NiFe of coercive force; Tunnel barrier layer is then by the Al of 1.0nm
2O
3Constitute.
Because magnetosphere FM1 and FM3 material constitute and be of uniform thickness, therefore, two-layer like this upset field is the same, the magnetized state of the bibarrier tunnel junction of this moment and unipotential tunnel junction barrier similar.In this scheme, incoming line A, B, C are arranged on the magnetosphere FM1, and the incoming line D knot that passes through tunnel is distributed to them with " 0 " and " 1 " respectively, and the current strength that flows through in every incoming line is all identical.If have only incoming line A that input current is arranged, the magnetization of its each layer does not all change; When incoming line A and B had the electric current input simultaneously, the direction of magnetization of soft ferromagnetic layer FM2 can be overturn; When incoming line A, B and C had the electric current input simultaneously, the direction of magnetization of magnetosphere FM1 and FM3 can be overturn.Utilize the combination of above-mentioned input signal A, B, C, D, configure multiple different logic state, promptly multiple logical function.
Two kinds of the most basic once logical functions at first are described---AND-function (AND) and NOT function (OR), it has two inputs and an output.When if two inputs are " 1 ", then output " 1 ".Here it is AND function.When all input signals are input as " 0 " except that two, all output " 1 ", Here it is OR function.
For the AND function, the first step, logic is set: all be applied with negative current for incoming line (A, B and C), make the direction of magnetization of magnetosphere FM1, FM2 and FM3 all point to left; Second step, carry out logic function, have only when forward current (promptly producing the electric current in a forward magnetic field) is applied on incoming line A and the B simultaneously, could switch to the direction of magnetization of intermediate magnetic layer FM2 right-hand from pointing to left.The OR function is by similar operation, but when beginning, the direction of magnetization of magnetosphere FM1 and FM3 is pointed to a left side, and the direction of magnetization of intermediate magnetic layer FM2 is then pointed to right-hand.The direction of magnetization of switching FM1 and FM3 layer can realize two kinds of basic logical functions in addition, i.e. NOTAND (NAND is with non-) or NOT OR (NOR, or non-).All three incoming lines (A, B and C) all have electric current that the direction of magnetization of FM1 and FM3 layer is switched.Switch the required magnetic field of the direction of magnetization of intermediate magnetic layer less than the required magnetic field of the direction of magnetization of switching FM1 and FM3 layer, therefore, intermediate layer and bilevel polarity can be switched independently of each other.
For the XOR function, we design an incoming line D (functional line) and pass through dual-potential magnetic tunnel, electric current is arranged through out-of-date in incoming line D, because the thermal effect effect reduces the coercive force of magnetosphere FM1 and FM3, thereby there are being incoming line A, B to do the also upset thereupon of the direction of magnetization of time spent magnetosphere FM1 and FM3 simultaneously.The first step, incoming line D applies electric current, and simultaneously, incoming line A, B pass to negative current, and promptly all to " 0 " signal, at this moment, the direction of magnetization of magnetosphere FM1, FM2 and FM3 is all left; And then give incoming line A and B with " 1 " signal, the obstructed electric current of incoming line D, at this moment, the direction of magnetization of free layer FM2 to the right, the initial condition of Here it is xor logic.Its logical process is as follows: at first, apply current signal for incoming line D, when the signal of incoming line A and B is-I (0), be output as low resistance state, be " 1 "; When the signal of incoming line A and B had only one-I (0), be output as high-impedance state this moment, is " 1 "; When incoming line A and B signal " 1 ", be output as low resistance state, be " 0 ".More than the logic true value table of five kinds of functions see Table 1.
By suitable combination, can construct any known known logic.
The input form and the output signal table of functions such as table 1, AND, NAND, OR, NOR, XOR
As shown in Figure 4, second kind of magnetic logic elements core texture based on dual-potential magnetic tunnel provided by the invention comprises following five layers: three layers of ferromagnetic layer FM1, FM2 and FM3, and at three layers of ferromagnetic layer therebetween, two tunnel barrier layer I1 and I2.Magnetosphere FM1, FM2 and FM3 are made of the 4nm CoFeSiB soft magnetic material that has than high spinning polarizability.Wherein FM1 and FM3 be by the antiferromagnetic materials IrMn pinning of 12nm, makes the direction of magnetization relative fixed that this is two-layer, and the direction of magnetization of FM2 is then overturn at less magnetic field energy, is free layer.Tunnel barrier I1 and I2 are that the AlN of 0.8nm constitutes by thickness then.
Operator scheme based on the magnetic logic elements of this structure is similar to embodiment 1.
As shown in Figure 5, the third magnetic logic elements core texture based on dual-potential magnetic tunnel provided by the invention comprises: a bottom inverse ferric magnetosphere AFM1; A lower magnetic layer of forming by the artificial antiferromagnetic coupling structure of FM11/Ru/FM1; A upper magnetic layer of forming by the artificial antiferromagnetic coupling structure of FM3/Ru/FM31; And at three layers of ferromagnetic layer (FM1, FM2, FM3) therebetween, two tunnel barrier layer I1 and I2; A top inverse ferric magnetosphere AFM2.FM1, FM2 and FM3 are made of the 4nm CoFeB soft magnetic material that has than high spinning polarizability, and FM11 and FM31 are made of 2nm CoFe material, and the thickness of Ru is 0.8nm.In it and FM1 and FM3 by antiferromagnetic materials PtMn and CoFe (2nm)/Ru (0.8nm)/artificial antiferromagnetic pinning of CoFeB (4nm), the direction of magnetization relative fixed that this is two-layer, the direction of magnetization of FM2 is then overturn at less magnetic field energy, is free layer.Tunnel barrier I1 and I2 then are MgO (001) formation of 2.0nm by thickness.
Operator scheme based on the magnetic logic elements of this structure is similar to embodiment 1.
Embodiment 4
In the above-described embodiments, we design magnetosphere FM1 and are made of identical magnetic material with FM3, and its thickness is also identical, and the purpose of doing like this is to make FM1 the same with the upset of the direction of magnetization of FM3 layer.We also can be designed as FM1 and are made of different coercitive magnetic materials with FM3 equally, and perhaps its thickness is inequality.The strong stupid power size of magnetic FM1 and FM3 is relevant with material and thickness thereof.
As shown in Figure 3, the magnetic logic elements core texture of present embodiment is as follows: a lower magnetic layer FM1 who is made of 4nm Co; One be formed on the described lower magnetic layer by 0.8nm Al
2O
3First tunnel barrier layer that constitutes; An intermediate magnetic layer FM2 who constitutes by 10nm CoFeB material who is formed on described first tunnel barrier layer; A second tunnel barrier layer I2 who is formed on the described intermediate magnetic layer is by Ta
2O
5Material constitutes, and its thickness is 1.5nm; A upper magnetic layer FM3 who constitutes by 4nm CoFe who is formed on second tunnel barrier layer.In this structure, required magnetic field (H) size order of each magnetosphere upset is: H (FM1)〉H (FM3)〉H (FM2), because the upset field of each layer is in different size, the magnetized state combination of each layer can have 8 kinds of different compound modes, sees Table 2.Thereby expect that a single magnetic logical block can be built into more logical function, realizes more logic function.
The input form of table 2, embodiment 4 and output signal table
In this scheme, for the logical function of two inputs, the direction of magnetization that we can set FM1 is fixed on a certain direction, and for example in logic, its direction of magnetization is pointed to left all the time.Have five kinds of logic functions (AND, NAND, OR, NOR and XOR) this moment, and its principle is omitted its detailed process with embodiment 1 at this.
If the magnetospheric direction of magnetization of FM1, FM2 and FM3 all can be controlled by input signal, each state in the table 2 can be represented the combination of several basic logic functions, to improve its integrated level greatly if construct integrated circuit, this miniaturization that helps following integrated circuit, integrated with this magnetic logic elements.Discuss for the 4th kind with table 2 below.
The first step imposes on incoming line A, B, C and D simultaneously to signal " 0 ", makes the direction of magnetization of FM1, FM2 and FM3 all point to a left side, and then applies signal " 1 " for incoming line A and B, and the direction of magnetization of middle free layer FM2 is pointed to right.Suppose to have three input A, B and C, its corresponding truth table sees Table 3, and corresponding logical expression is:
The function of such magnetic logic will just can be finished with a plurality of single common unipotentials base magnetic logic elements, and as seen its integrated level has improved greatly.
The input form of table 3 embodiment 4 and output signal table
Equally, switch the direction of magnetization of other layers, can obtain other logical function, the logic function of each logical function is several common logical function functions quite, and concrete does not give unnecessary details one by one at this.
Embodiment 5
Present embodiment is intended to illustrate a kind of magnetic logic elements array.As shown in Figure 6, the core texture of this kind magnetic logic elements is as above-mentioned example.Difference be incoming line A, C and and incoming line B be an angle of 90 degrees and arrange, when forward current was applied to incoming line A and B simultaneously and goes up, promptly two incoming lines produced a resultant magnetic field and could switch to other direction to the direction of magnetization of intermediate magnetic layer from a direction.All three incoming lines (A, B and C) all have electric current that the direction of magnetization of FM1 and FM3 layer is switched.Switch the required magnetic field of the direction of magnetization of intermediate magnetic layer less than the required magnetic field of the direction of magnetization of switching FM1 and FM3 layer, therefore, intermediate layer and bilevel polarity can be switched independently of each other.The logic function of present embodiment is consistent with embodiment 1, is not described in detail in this.
Fig. 7 has provided the magnetic logic elements array schematic diagram based on this design, and its similar is in the principle of MRAM device (MRAM).
Claims (9)
1, a kind of logic element based on dual-potential magnetic tunnel, this logic element comprise four input signal cables, output signal line and tunneling junction cell; The current strength that flows through in every input signal cable is all identical, respectively " 0 " and " 1 " is distributed to them, utilize the combination of input signal A, B, C, D, the magnetospheric direction of magnetization in the decision tunnel junction, the size of magneto-resistance effect that will be by dual-potential magnetic tunnel is as output signal, it is characterized in that: described tunneling junction cell is the dual-potential magnetic tunnel unit, and it comprises:
A lower magnetic layer;
First tunnel barrier layer that is formed on the described lower magnetic layer;
An intermediate magnetic layer that is formed on described first tunnel barrier layer;
Second tunnel barrier layer that is formed on the described intermediate magnetic layer;
A upper magnetic layer that is formed on second tunnel barrier layer;
Described three magnetospheric composition materials are ferrimagnet, semimetal magnetic material or magnetic semiconductor material, and each magnetospheric thickness is 2~10nm;
The composition material of described tunnel barrier layer is for being selected from MgO, Al
2O
3, AlN, Ta
2O
5Or HfO
2, its thickness is 0.8~3.0nm.
2, the logic element based on dual-potential magnetic tunnel as claimed in claim 1 is characterized in that:
Described ferrimagnet is 3d transition group magnetic metal, ferromagnetic alloy or rare earth metal;
Described semimetal magnetic material is Fe
3O
4, CrO
2, La
0.7Sr
0.3MnO
3Or Co
2MnSi;
Described magnetic semiconductor material is Fe, Co, Ni or V;
Described magnetic semiconductor material or the ZnO, the TiO that mix for Mn
2, HfO
2Or SnO
2
Described magnetic semiconductor material or GaAs, the InAs, GaN or the ZnT that mix for Mn.
3, the logic element based on dual-potential magnetic tunnel as claimed in claim 2 is characterized in that: described ferromagnetic alloy is the rare earth metal ferrimag.
4, the logic element based on dual-potential magnetic tunnel as claimed in claim 2 is characterized in that:
Described ferrimagnet is Fe, Co, Ni, Co-Fe, Co-Fe-B, Ni-Fe, Co-Fe-Ni, Gd-Y, Pr, Nd, Sm, Gd, Tb, Dy, Ho or Er.
5, as claim 1,2 or 4 described logic elements, it is characterized in that based on dual-potential magnetic tunnel: described tunneling junction cell, also comprise,
First antiferromagnetic layer under described lower magnetic layer;
Second antiferromagnetic layer on described upper magnetic layer;
The thickness of described first antiferromagnetic layer and second antiferromagnetic layer is 7~20nm.
6, the logic element based on dual-potential magnetic tunnel as claimed in claim 5 is characterized in that: the composition material of described first antiferromagnetic layer and second antiferromagnetic layer is alloy material, CoO, NiO or the PtCr of Ir, Fe, Rh, Pt or Pd and Mn.
7, as claim 1,2 or 4 described logic elements, it is characterized in that based on dual-potential magnetic tunnel: described tunneling junction cell, also comprise,
Under described lower magnetic layer, also comprise Ru layer, the 3rd magnetosphere and first antiferromagnetic layer successively;
On described upper magnetic layer, also comprise Ru layer, the 4th magnetosphere and second antiferromagnetic layer successively;
The thickness of described first antiferromagnetic layer and second antiferromagnetic layer is 7~20nm;
Described the 3rd magnetosphere and the 4th magnetospheric composition material are ferrimagnet, semimetal magnetic material or magnetic semiconductor material, and each magnetospheric thickness is 2~10nm;
The thickness of described Ru layer is 0.7~0.9nm.
8, the logic element based on dual-potential magnetic tunnel as claimed in claim 7 is characterized in that: the composition material of described first antiferromagnetic layer and second antiferromagnetic layer is alloy material, CoO, NiO or the PtCr of Ir, Fe, Rh, Pt or Pd and Mn.
9, a kind of array of logic elements change based on dual-potential magnetic tunnel the magnetic logic elements array, be with the described logic element based on dual-potential magnetic tunnel of one of any a plurality of claims 1 to 8 according to arrayed, and make logic input signal or read current flow through magnetic logic elements.
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JP5526707B2 (en) * | 2009-10-27 | 2014-06-18 | ソニー株式会社 | Driving method of information storage element |
KR102099191B1 (en) | 2013-03-15 | 2020-05-15 | 인텔 코포레이션 | Logic chip including embedded magnetic tunnel junctions |
WO2015147807A1 (en) * | 2014-03-25 | 2015-10-01 | Intel Corporation | Magnetic domain wall logic devices and interconnect |
CN104575934A (en) * | 2015-02-02 | 2015-04-29 | 于广华 | Magnetoresistance thin-film material, preparation method, magnetic sensor and element |
CN108738371B (en) * | 2017-02-24 | 2022-01-25 | Tdk株式会社 | Magnetization reversal element, magnetoresistance effect element, and memory device |
WO2021016837A1 (en) * | 2019-07-30 | 2021-02-04 | 北京航空航天大学 | Magnetic tunnel junction, manufacturing method, spin diode, and memory |
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CN1601610A (en) * | 2004-10-10 | 2005-03-30 | 中国科学院物理研究所 | Double-barrier tunnel junction senser having effect of resonance tunnel pass |
US20050110004A1 (en) * | 2003-11-24 | 2005-05-26 | International Business Machines Corporation | Magnetic tunnel junction with improved tunneling magneto-resistance |
US20050219895A1 (en) * | 2004-04-06 | 2005-10-06 | Headway Technologies, Inc. | Magnetic random access memory array with free layer locking mechanism |
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US20050110004A1 (en) * | 2003-11-24 | 2005-05-26 | International Business Machines Corporation | Magnetic tunnel junction with improved tunneling magneto-resistance |
US20050219895A1 (en) * | 2004-04-06 | 2005-10-06 | Headway Technologies, Inc. | Magnetic random access memory array with free layer locking mechanism |
CN1601610A (en) * | 2004-10-10 | 2005-03-30 | 中国科学院物理研究所 | Double-barrier tunnel junction senser having effect of resonance tunnel pass |
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