CN100505286C - Image sensor and method of manufacturing the same - Google Patents
Image sensor and method of manufacturing the same Download PDFInfo
- Publication number
- CN100505286C CN100505286C CNB2006101701733A CN200610170173A CN100505286C CN 100505286 C CN100505286 C CN 100505286C CN B2006101701733 A CNB2006101701733 A CN B2006101701733A CN 200610170173 A CN200610170173 A CN 200610170173A CN 100505286 C CN100505286 C CN 100505286C
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- Prior art keywords
- dielectric layer
- interlayer dielectric
- imageing sensor
- semiconductor substrate
- gate electrode
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- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000010410 layer Substances 0.000 claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000011229 interlayer Substances 0.000 claims abstract description 30
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims description 15
- 238000006396 nitration reaction Methods 0.000 claims description 13
- 238000000059 patterning Methods 0.000 claims description 13
- 239000012535 impurity Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
Abstract
Embodiments relate to and image sensor. In embodiments, the image sensor may include a semiconductor substrate, a photodiode region, a gate electrode, a dummy gate, and an interlayer dielectric layer. The semiconductor substrate includes a field oxide layer. The photodiode region may be formed on the semiconductor substrate. The gate electrode may be formed on the semiconductor substrate. The dummy gate may be formed on the field oxide layer. The interlayer dielectric layer may be formed on one side of the dummy gate and includes an opening exposing the photodiode region.
Description
Technical field
The present invention relates to a kind of manufacture method of semiconductor device.
Background technology
Imageing sensor is a kind of semiconductor transducer that optical imagery is converted into the signal of telecommunication.Imageing sensor comprises the optical pickocff part that is used for sensor light and is used for the light of institute's sensing is converted to the signal of telecommunication so that obtain the logical circuit part of data.Especially, complementary oxidized metal oxide semiconductor (CMOS) imageing sensor uses transformation approach (switching method).Described transformation approach utilizes MOS transistor sequentially to detect output.Utilize the CMOS technology, make MOS transistor according to pixel quantity.
The unit picture element of cmos image sensor comprises four transistors and as the photodiode of photoelectric detector.Four transistors comprise: transfering transistor, and its optical charge that will be gathered on the photodiode is transferred to floating junction (floating node); Reset transistor, it resets floating junction by the optical charge that removal is stored in this floating junction; Driving transistors, it follows buffer amplifier as the source; And the selection transistor, it is used for conversion and addressing (switching and addressing).
Referring now to Fig. 1 traditional imageing sensor is described.
Referring to Fig. 1, on the Semiconductor substrate 100 that comprises P type epitaxial loayer 110, form field oxide.Side at substrate 100 forms the nmos pass transistor that comprises gate dielectric 130, grid 140 and N+ interface (not shown).Opposite side adjacent gate 140 at substrate 100 forms the photodiode with positive-negative-positive structure, and it has dark N-district 151, P0 district 152 and epitaxial loayer 110 as photoelectric detector.Grid 140 is a transfer gate.
In addition, on substrate 100, form the interlayer dielectric layer 160 that surrounds grid 140 lateral parts.Interlayer dielectric layer 160 comprises first oxide layer 161, second oxide layer 162 and the nitration case 163 that order is stacked.Expose photodiode by in interlayer dielectric layer 160, forming opening 160a.First oxide layer 161 can be by silicon dioxide (SiO
2) form.Second oxide layer 162 can be formed by the TEOS layer.Nitration case 163 can be by silicon nitride (Si
xN
y) form.
Yet, in traditional imageing sensor, because the refractive index height, pass the part light that lenticule 170 and filter incide on the photodiode and leave photodiode.Therefore, just reduced the generation of electron hole pair and make the performance degradation of imageing sensor.
Summary of the invention
Therefore, the present invention aims to provide a kind of display device, and it has overcome the one or more problems that cause owing to the defective of correlation technique or restriction basically.
The object of the present invention is to provide the manufacture method of a kind of imageing sensor and this imageing sensor, described imageing sensor has increased the light collection efficiency of photoelectric detector such as photodiode so that alleviate the performance degradation of photoelectric detector.
Other advantage of the present invention, purpose and feature will partly be described in following specification, and for the ordinary skill in the art, will partly become clear after having studied following content, and perhaps it can be known from the practice of the present invention.By specifically noted structure in the specification of being write, its claims and accompanying drawing, can realize and obtain purpose of the present invention and other advantage.
For realizing these purposes and other advantage, according to the intent of the present invention,, the invention provides a kind of imageing sensor as in this concrete enforcement and broadly described, comprising: Semiconductor substrate, it comprises field oxide; Photodiode region, it is formed on this Semiconductor substrate; Gate electrode, it is formed on this Semiconductor substrate; Pseudo-grid (dummy gate), it is formed on this field oxide; And interlayer dielectric layer, it is formed on the side of these puppet grid and comprises the opening that exposes photodiode region; And wherein this interlayer dielectric layer comprises oxide layer and the nitration case that order is stacked.
According to another aspect of the present invention, the invention provides a kind of manufacture method of imageing sensor, it may further comprise the steps: form field oxide on Semiconductor substrate; Order forms gate dielectric and gate material layers on this substrate; This gate material layers of patterning is to form gate electrode and forming pseudo-grid on this field oxide on this Semiconductor substrate; Foreign ion is injected in this substrate to form photodiode region; On this substrate, form interlayer dielectric layer; And this interlayer dielectric layer of patterning is to form predetermined opening; And the step of wherein said formation interlayer dielectric layer comprises sequential aggradation oxide layer and nitration case.
Should be appreciated that aforementioned generality explanation of the present invention and following detailed description all are exemplary and indicative, and be intended to the claimed further explanation that the invention provides.
Description of drawings
Included accompanying drawing provides further understanding of the present invention, and it is incorporated among the application and constitutes the application's a part, and described accompanying drawing shows embodiments of the invention and is used from explanation principle of the present invention with specification one.In the drawings:
Fig. 1 is the cutaway view that shows conventional image sensor;
Fig. 2 a to Fig. 2 c is the cutaway view that shows according to the continuous processing of the method for making image sensor of the embodiment of the invention.
Embodiment
Now will be in detail with reference to the preferred embodiments of the present invention, the example is shown in the described accompanying drawing.As possible, in institute's drawings attached, all use identical Reference numeral to represent identical or similar parts.
Fig. 2 a to Fig. 2 c is the cutaway view that shows according to the continuous processing of the method for making image sensor of the embodiment of the invention.
Referring to Fig. 2 a, on the Semiconductor substrate 200 that comprises P type epitaxial loayer 210, form field oxide 220.Successive sedimentation gate dielectric 230 and gate material layers on substrate 200.
Can use polysilicon to form described gate material layers.
Particularly, patterning grid dielectric layer 230 and polysilicon are so that form pseudo-grid 241 and gate electrode 242.The pseudo-grid 241 that form on field oxide 220 are being similar to gate electrode 242 in shape.
Referring to Fig. 2 b, by foreign ion being injected substrate 200, contiguous gate electrode 242 places form N type impurity range 251 and the p type impurity district 252 that is made of dark N district respectively in substrate 200.
Therefore, just form the photodiode region that comprises N type impurity range 251 and p type impurity district 252.
In addition, when light enters photodiode region, around p type impurity district 252, form the depletion region of supplies electrons.
Then, form transistor by on a side of substrate 200, forming N+ interface (not shown).
Referring to Fig. 2 c, form interlayer dielectric layer 260 in the front side of substrate 200.Interlayer dielectric layer 260 comprises first oxide layer 261, second oxide layer 262 and the nitration case 263 of sequential aggradation.
Then, by patterning interlayer dielectric layer 260, the side of pseudo-grid 241 and gate electrode 242 is surrounded by interlayer dielectric layer 260.In addition, also etch process will be carried out so that remove the interlayer dielectric layer 260 that is formed on pseudo-grid 241 and the gate electrode 242.
In other words, by patterning interlayer dielectric layer 260, remove the interlayer dielectric layer 260 that is formed on pseudo-grid 241 and the gate electrode 242, and interlayer dielectric layer 260 is stayed the both sides of pseudo-grid 241 and the both sides of gate electrode 242 respectively.
Then, form the opening 260a that exposes photodiode with positive-negative-positive structure.
By the pseudo-grid 241 that on field oxide 220, form, just increased the area of the nitration case 263 on the sidewall that is deposited on opening 260a.
Because the refractive index height, can leave photodiode so pass the part light that lenticule 270 and filter (not shown) incide on the photodiode.Yet the area that is deposited on the nitration case 263 on the sidewall of opening 260a is big more, and the light of reflection is just many more on nitration case 263.Therefore, just increased the amount that incides the light on the photodiode.
In other words, the part light by lenticule 270 refractions leaves photodiode.Yet part light can reflect and be directed to photodiode on nitration case 263.
Although not shown in Fig. 2 c, in the interlayer dielectric layer 260 that is formed between substrate 200 and the lenticule 270, form a plurality of contact plugs (contact plug).Described contact plug provides the electrical connection between each layer.
Therefore, in the imageing sensor according to the embodiment of the invention, the light that is reflected by lenticule 270 can be collected in the photodiode.In photodiode, can not reduce the generation of electron hole pair.
As mentioned above, by on field oxide, forming pseudo-grid, just increased photoelectric detector as the light collection efficiency of photodiode performance degradation with photoelectric detector as described in alleviating according to imageing sensor of the present invention.
In addition, by manufacture method, when forming gate electrode, also on field oxide, form pseudo-grid according to imageing sensor of the present invention.Therefore, owing to need not to form the technology of additional pseudo-grid, just can not increase the technology cost.
It will be apparent to one skilled in the art that can modifications and variations of the present invention are.Therefore, this means that the present invention covers all modifications and the variation in appended claims and the equivalency range thereof.
Claims (12)
1. imageing sensor comprises:
Semiconductor substrate, it comprises field oxide;
Photodiode region, it is formed on this Semiconductor substrate;
Gate electrode, it is formed on this Semiconductor substrate;
Pseudo-grid, it is formed on this field oxide; And
Interlayer dielectric layer, it is formed on the side of these puppet grid and comprises the opening of a part of exposing this photodiode region;
And wherein this interlayer dielectric layer comprises oxide layer and the nitration case that order is stacked.
2. imageing sensor according to claim 1, wherein this imageing sensor also comprises the gate dielectric that is formed between these puppet grid and this field oxide.
3. imageing sensor according to claim 1, wherein the opening of this interlayer dielectric layer is formed between these puppet grid and this gate electrode.
4. imageing sensor according to claim 1, wherein this imageing sensor also is included in the gate dielectric that forms on the side of contiguous this Semiconductor substrate of this gate electrode.
5. imageing sensor according to claim 1, wherein this oxide layer and this nitration case are formed at the both sides of these puppet grid and the both sides of this gate electrode.
6. imageing sensor according to claim 1 wherein should be formed by identical materials with this gate electrode by the puppet grid.
7. imageing sensor according to claim 1, wherein this photodiode region comprises p type impurity district and N type impurity range.
8. the manufacture method of an imageing sensor may further comprise the steps:
On Semiconductor substrate, form field oxide;
Order forms gate dielectric and gate material layers on described Semiconductor substrate;
This gate material layers of patterning is to form gate electrode and forming pseudo-grid on this field oxide on this Semiconductor substrate;
Foreign ion is injected in this Semiconductor substrate to form photodiode region;
On described Semiconductor substrate, form interlayer dielectric layer; And
This interlayer dielectric layer of patterning is to form predetermined opening; And
The step of wherein said formation interlayer dielectric layer comprises sequential aggradation oxide layer and nitration case.
9. manufacture method according to claim 8, wherein the opening that forms in this interlayer dielectric layer exposes the part of this photodiode region.
10. manufacture method according to claim 8, the step of wherein said this interlayer dielectric layer of patterning comprise the part that forms of removing interlayer dielectric layer on these puppet grid and this gate electrode.
11. manufacture method according to claim 8, wherein said photodiode region comprise p type impurity district and N type impurity range, and by this interlayer dielectric layer of patterning, expose this p type impurity district.
12. manufacture method according to claim 8 wherein after the step of described this interlayer dielectric layer of patterning, is spaced apart at a predetermined distance from each other between these puppet grid and this gate electrode.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020050131503A KR100716911B1 (en) | 2005-12-28 | 2005-12-28 | Image sensor and method of manufacturing the same |
| KR1020050131503 | 2005-12-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1992307A CN1992307A (en) | 2007-07-04 |
| CN100505286C true CN100505286C (en) | 2009-06-24 |
Family
ID=38192549
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006101701733A Expired - Fee Related CN100505286C (en) | 2005-12-28 | 2006-12-25 | Image sensor and method of manufacturing the same |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US7563637B2 (en) |
| KR (1) | KR100716911B1 (en) |
| CN (1) | CN100505286C (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101152389B1 (en) * | 2007-09-13 | 2012-06-05 | 삼성전자주식회사 | Image sensor and method of fabricating the same |
| KR102085525B1 (en) | 2013-11-27 | 2020-03-09 | 삼성전자 주식회사 | Semiconductor device and method for fabricating the same |
| CN112582440B (en) * | 2020-12-30 | 2023-04-07 | 长春长光辰芯光电技术有限公司 | CMOS image sensor and manufacturing method thereof |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003234496A (en) * | 2002-02-12 | 2003-08-22 | Sony Corp | Solid-state image pickup device and its manufacturing method |
| KR20030096659A (en) * | 2002-06-17 | 2003-12-31 | 삼성전자주식회사 | Pixel array region of an image sensor, structure thereof and fabrication method thereof |
| JP2004104203A (en) * | 2002-09-05 | 2004-04-02 | Toshiba Corp | Solid state imaging device |
| KR100524200B1 (en) * | 2003-01-16 | 2005-10-26 | 삼성전자주식회사 | Image device and method of manufacturing the same |
| US6861686B2 (en) | 2003-01-16 | 2005-03-01 | Samsung Electronics Co., Ltd. | Structure of a CMOS image sensor and method for fabricating the same |
| KR20050056350A (en) * | 2003-12-10 | 2005-06-16 | 매그나칩 반도체 유한회사 | Method of manufacturing cmos image sensor |
| KR20050106930A (en) * | 2004-05-06 | 2005-11-11 | 매그나칩 반도체 유한회사 | Cmos image sensor and fabricating method thereof |
| KR100672993B1 (en) * | 2005-01-19 | 2007-01-24 | 삼성전자주식회사 | Image sensor with self-boosting, self-boosting method thereof and method for forming the same |
-
2005
- 2005-12-28 KR KR1020050131503A patent/KR100716911B1/en not_active IP Right Cessation
-
2006
- 2006-12-22 US US11/615,632 patent/US7563637B2/en not_active Expired - Fee Related
- 2006-12-25 CN CNB2006101701733A patent/CN100505286C/en not_active Expired - Fee Related
-
2009
- 2009-06-18 US US12/487,416 patent/US7868364B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US7563637B2 (en) | 2009-07-21 |
| US20090256179A1 (en) | 2009-10-15 |
| US20070145365A1 (en) | 2007-06-28 |
| KR100716911B1 (en) | 2007-05-10 |
| CN1992307A (en) | 2007-07-04 |
| US7868364B2 (en) | 2011-01-11 |
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