CN100502068C - LED packaging structure - Google Patents
LED packaging structure Download PDFInfo
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- CN100502068C CN100502068C CNB2006101642561A CN200610164256A CN100502068C CN 100502068 C CN100502068 C CN 100502068C CN B2006101642561 A CNB2006101642561 A CN B2006101642561A CN 200610164256 A CN200610164256 A CN 200610164256A CN 100502068 C CN100502068 C CN 100502068C
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- emitting diode
- encapsulating structure
- bearing seat
- lead frame
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
The invention provides a package structure of a light-emitting diode (LED), comprising a conducting wire support and heat dissipation material. The conducting wire support is provided with a bearing seat, a pair of extending parts, a first electrode and a second electrode, wherein, the bearing seat is provided with a circular arc-shaped edge, a convex part, a first surface and a second surface; each extending part is provided with a first side, a second side, a first top and a first bottom; the first side is connected with the circular arc-shaped edge of the bearing seat; the convex part of the bearing seat is in electrical connection with the first electrode; the heat dissipation material is arranged on the second surface of the bearing seat.
Description
Technical field
The present invention is about a kind of encapsulating structure and manufacture method thereof of light-emitting diode, especially in regard to a kind of encapsulating structure and manufacture method thereof of High Power LED.
Background technology
For the light-emitting diode (light emitting diode is hereinafter to be referred as LED) of different heat power, in response to thing followed optics, telecommunications, heat dissipation problem behind the power ascension, LED encapsulation kenel also changes thereupon.Distinguish with the highest input power, mainly can be divided into bullet cut LED, Piranha LED and high-capacity LED, traditional as shown in Figure 1a bullet cut LED encapsulating structure (Luxeon ReliabilityApplication Brief AB25), its main package assembling are led chip 11 (LED chip), chip sticker (Die attach) (figure does not show), lead-in wire bonding 12 (Wire bonding), reflection cup 13 (Reflector cup), lead frame 14 (Lead frame) and lens 15 (Lens).Wherein, lens can be done different optical designs at different optical demands.The led chip size is 0.35 * 0.35mm to the maximum
2, the highest input power is 0.1W.Because bullet cut LED input power is not high, therefore in this class encapsulation, do not need to be designed at electrical, heat dissipation problem.Yet along with the increase of LED brightness demand, the input power of LED develops towards high wattage direction gradually.Than high its highest input power of Piranha LED of bullet cut LED input power approximately between between the 0.2W to 0.5W, traditional Piranha LED encapsulating structure stereogram shown in Fig. 1 b, its main package assembling are led chip (figure shows), chip sticker (figure shows), lead-in wire bonding (figure shows), reflection cup (figure shows), lead frame 24 and lens 25.The led chip size with the highest input power difference approximately between 0.35 * 0.35mm
2To 0.61 * 0.61mm
2Between.Its main package group becomes assembly identical with bullet cut LED.Yet the lead frame of Piranha LED has four pins, many two than bullet cut LED.With the heat radiation viewpoint, the lead frame of Piranha LED provides the approach that preferably dispels the heat than bullet cut LED.In addition, Piranha LED can be welded in the mode of jack type (Pin through hole) or surface adhering (Surface mount) printed circuit board (PCB) (Printed Circuit Board, PCB) on.Traditional high-power LED encapsulation construction (Luxeon Reliability Application Brief AB25) shown in Fig. 1 c, the highest input power is 1W to 5W, and its main package assembling is led chip 31, lead-in wire bonding 32, lead frame 34, plastic lens 35, silicon sealer 36 (silicone encapsulent), radiating block 37 (Heat slug) and plastic housing 38 (plastic case).Employed chip size is greater than 1.0 * 1.0mm
2Since the lifting of input power, in high-power LED encapsulating structure, the electrical and heat dissipation problem of essential consideration.Therefore, in high-power LED encapsulation construction, except the package assembling that comprises bullet cut LED, also comprised radiating block (Heat slug).In addition, in order to prevent that (Electrostatic Discharge, (Electrical Overstress EOS) destroys static discharge, is also optionally designed ESD) to cause excessively electrical stress.
Because these three kinds of LED encapsulating structure kenel differences, so its making flow process also differs widely.With bullet cut LED and Piranha LED, at first go out required lead frame, and on lead frame, get required reflection cup in the mode of punch die, bend out pin at last again.Be respectively bullet cut LED and Piranha LED lead frame.After chip being placed reflection cup and the bonding that goes between intact, lead frame placed pour into epoxy resin (Epoxy) in the mould bar to form lens.After treating that epoxy resin adds warm hardening, the unwanted part of excision is promptly finished the making of LED behind the demoulding.Such mode is made LED, because its cost can be produced and reduce to its speed of production soon in a large number.In the making of high-capacity LED, the heat that chip is produced during for the transmission high power, general high-capacity LED has all comprised radiating block.Fig. 1 d is traditional high-power LED encapsulation construction of U.S. Patent number US 6,274,924 B1.Its main package assembling comprises radiating block 410, the lead frame 412 in conjunction with outer cover (Housing), reflection cup 414, chip 416, base 418 (submount) and lens 420.The encapsulating structure of this kind high-capacity LED at first with outer cover in conjunction with lead frame, to reach the partly effect of insulation.In conjunction with after lead frame 412 assemble to finish high-power LED encapsulation construction with lens 420, chip 416 and radiating block 410 again.The configuration of radiating block also has alternate manner in high-power LED encapsulation construction.Shown in Fig. 1 e and Fig. 1 f, U.S. Patent number US 6,376, the high-power LED encapsulation construction that 902 B1 and US 2004/0238930 A1 are proposed, and along the profile of Fig. 1 eI-I ' tangent line, its radiating block 502 directly combines with lead frame 507 and outer cover 503, sunk part 511 (reflection cup) can be by the purpose that reaches reflection at outer cover 503 inner edges coatings one deck reflecting materials (reflection enhancing material), for access node always closes the semi-finished product of the high-capacity LED encapsulation of radiating block 502, lead frame 507 and outer cover 503.
For the not high product of brightness requirement, because its cost of manufacture of high-power LED encapsulation construction is high than bullet cut LED encapsulating structure, the bullet cut LED encapsulating structure of therefore low cost of manufacture is still a good selection.Balance single luminous intensity of LED and cost of manufacture, Piranha LED encapsulating structure can improve a kind of encapsulating structure that single luminous intensity of LED is also taken into account economic benefit simultaneously at last.Yet,, therefore when input power promotes, will be accompanied by heat dissipation problem because Piranha LED encapsulating structure does not have radiating block.For electronic product, when the led chip temperature increased by 10 ℃, its reliability reduced by 50% (come from Remsburg Ralph in document in 1997 " Advanced thermaldesign of electronic equipment ") approximately.In addition, owing to LED brightness and life-span can be decayed along with the raising of its suffered temperature and reduced, therefore need a kind of high-power LED encapsulation construction, remove the reliability that can promote LED, also can reduce the decay of LED brightness than low thermal resistance (thermal resistance).
Summary of the invention
In view of this, main purpose of the present invention provides a kind of encapsulating structure and manufacture method thereof of light-emitting diode, utilize Piranha LED encapsulation form to be structure, and add that the load bearing seat extension of lead frame and radiating block are as high-power LED encapsulation construction, to reduce production costs and to improve radiating efficiency, improve the problem of above-mentioned conventional art.
For reaching the above-mentioned purpose of invention, the invention provides a kind of encapsulating structure of light-emitting diode, comprise: a lead frame, it has a load bearing seat, a pair of extension, one first electrode and one second electrode, above-mentioned load bearing seat has a radiused edges and a projection, above-mentioned extension has a first side, one second side, one first top and one first bottom, this first side is connected with the above-mentioned radiused edges of above-mentioned load bearing seat, above-mentioned first electrode and above-mentioned second electrode have a junction respectively and divide and couple of conductor bridge joint pin, the above-mentioned radiused edges of above-mentioned load bearing seat and above-mentioned projection electrically connect, the above-mentioned coupling part of above-mentioned projection and above-mentioned first pair of electrode electrically connects, the above-mentioned lead frame pin of the above-mentioned coupling part of above-mentioned first electrode and above-mentioned first electrode electrically connects, the above-mentioned lead frame pin of the above-mentioned coupling part of above-mentioned second electrode and above-mentioned second electrode electrically connects, and above-mentioned load bearing seat has a first surface and a second surface, and wherein above-mentioned second surface is positioned at the opposition side of above-mentioned first surface; One LED crystal particle is arranged on the above-mentioned first surface of above-mentioned load bearing seat; One lead has two-end-point, and above-mentioned two-end-point electrically connects with the above-mentioned coupling part of above-mentioned LED crystal particle and above-mentioned second electrode respectively; And an encapsulating material, (ThermalConductivity, W/mK), and above-mentioned encapsulating material coats above-mentioned lead frame and above-mentioned LED crystal particle to have one first coefficient of heat conduction.
The present invention also provides a kind of encapsulating structure of light-emitting diode, comprise: a lead frame, it has a load bearing seat, a pair of extension, one first electrode and one second electrode, above-mentioned load bearing seat has a radiused edges and a projection, above-mentioned extension has a first side, one second side, one first top and one first bottom, this first side is connected with the above-mentioned radiused edges of above-mentioned load bearing seat, above-mentioned first electrode and above-mentioned second electrode have a junction respectively and divide and couple of conductor bridge joint pin, the above-mentioned radiused edges of above-mentioned load bearing seat and above-mentioned projection electrically connect, the above-mentioned coupling part of above-mentioned projection and above-mentioned first pair of electrode electrically connects, the above-mentioned lead frame pin of the above-mentioned coupling part of above-mentioned first electrode and above-mentioned first electrode electrically connects, the above-mentioned lead frame pin of the above-mentioned coupling part of above-mentioned second electrode and above-mentioned second electrode electrically connects, and above-mentioned load bearing seat has a first surface and a second surface, and wherein above-mentioned second surface is positioned at the opposition side of above-mentioned first surface; One LED crystal particle is arranged on the above-mentioned first surface of above-mentioned load bearing seat; One lead has two-end-point, and above-mentioned two-end-point electrically connects with the above-mentioned coupling part of above-mentioned LED crystal particle and above-mentioned second electrode respectively; And an encapsulating material, (Thermal Conductivity, W/mK), and above-mentioned encapsulating material coats above-mentioned lead frame and above-mentioned LED crystal particle to have one first coefficient of heat conduction.The encapsulating structure of above-mentioned light-emitting diode, wherein also comprise: a heat sink material, be arranged on the above-mentioned second surface of above-mentioned load bearing seat, above-mentioned heat sink material has one second top, one second bottom, one group of the 3rd side and one group of the 4th side, and above-mentioned second top of above-mentioned heat sink material contacts with above-mentioned first bottom of the above-mentioned second surface of this load bearing seat and above-mentioned extension.
Description of drawings
Fig. 1 a is traditional bullet cut LED encapsulating structure (Luxeon Reliability Application BriefAB25).
Fig. 1 b is traditional Piranha LED encapsulating structure stereogram.
Fig. 1 c is traditional high-power LED encapsulation construction (Luxeon Reliability Application BriefAB25)
Fig. 1 d is the high-power LED encapsulation construction of U.S. Patent number US 6,274,924 B1.
Fig. 1 e is the high-power LED encapsulation construction that U.S. Patent number US 6,376,902 B1 and IUS 2004/0238930 A1 are proposed.
Fig. 1 f is the profile along Fig. 1 eI-I ' tangent line.
Fig. 2 a is the high-power LED encapsulation construction stereogram of the embodiment of the invention.
Fig. 2 b is the high-power LED encapsulation construction assembling schematic diagram of the embodiment of the invention.
Fig. 3 a is the lead frame stereogram of the high-power LED encapsulation construction of first embodiment of the invention.
Fig. 3 b is the stereogram that the lead frame of the high-power LED encapsulation construction of second embodiment of the invention combines with heat sink material.
Fig. 3 c is the lead frame stereogram of the LED encapsulating structure of comparative example.
Fig. 4 is the front view/profile along Fig. 2 aA-A ' tangent line, shows the heat radiation approach of the high-power LED encapsulation construction that is arranged on the embodiment of the invention on the printed circuit board (PCB).
Fig. 5 a is the lead frame heat distribution analogous diagram of the LED encapsulating structure of comparative example.
Fig. 5 b is the lead frame heat distribution analogous diagram of the high-power LED encapsulation construction of first embodiment of the invention.
Fig. 5 c is the heat distribution simulation drawing that the lead frame of the high-power LED encapsulation construction of second embodiment of the invention combines with heat sink material.
The primary clustering symbol description
Prior art:
Fig. 1 a:
11～led chip;
12～lead-in wire bonding;
13～reflection cup;
14～lead frame;
15～lens;
Fig. 1 b:
23～reflection cup;
24～lead frame;
25～lens;
Fig. 1 c:
31～led chip;
32～lead-in wire bonding;
34～lead frame;
35～plastic lens;
36～silicon sealer;
37～radiating block;
38～plastic housing;
Fig. 1 d:
410～radiating block;
412～in conjunction with the lead frame of outer cover;
414～reflection cup;
416～led chip;
418～base;
420～lens;
Fig. 1 e to Fig. 1 g:
502～radiating block;
503～outer cover;
507～lead frame;
511～sunk part;
The embodiment of the invention:
100～high-power LED encapsulation construction;
111～encapsulating material;
112～high-capacity LED chip;
113～lead frame;
121～load bearing seat;
122～the first electrodes;
123～the second electrodes;
124～radiused edges;
125～projection;
126～shape of a hoof zone;
127～lead frame pin;
128～first surface;
129～second surface;
130～lead;
131～sunk part;
132～extension;
133～first side;
135～the first tops;
136～the first bottoms;
137～heat sink material;
138～the second tops;
139～the second bottoms;
140～the 3rd sides;
141～the 4th sides;
142～the 3rd bottoms;
143～printed circuit board (PCB);
144～heat dissipation path;
200～lead frame;
300～lead frame.
Embodiment
Following conjunction with figs. illustrates in greater detail the encapsulating structure and the manufacture method thereof of the light-emitting diode of the preferred embodiment of the present invention.In various embodiments of the present invention, the assembly that identical symbolic representation is identical.
Please refer to Fig. 2 a, it shows high-power LED encapsulation construction 100 stereograms of the embodiment of the invention.Please refer to Fig. 2 b, it shows the high-power LED encapsulation construction 100 assembling schematic diagrames of the embodiment of the invention.High-power LED encapsulation construction 100 main package assemblings comprise encapsulating material 111, high-capacity LED chip 112 and lead frame 113.At first, one lead frame 113 is provided, the material of lead frame 113 can be gold, silver, copper, tungsten, nickel, silicon, aluminium, molybdenum or above-mentioned alloy, ceramic composite, class brill material with carbon element, metal oxide or other electric conducting material, and lead frame 113 can utilize die stamping mode to form.
First embodiment
Then, please refer to Fig. 3 a, it shows lead frame 200 stereograms of the high-power LED encapsulation construction of first embodiment of the invention.Lead frame 200 has a load bearing seat 121, a pair of extension 132, one first electrode 123 and one second electrode 124, load bearing seat 121 has a radiused edges 124 and a projection 125, this has a first side 133 to extension 132, one first top 135 and one first bottom 136, this first side 133 is connected with this radiused edges 124 of this load bearing seat 121, this first electrode 123 and second electrode 124 have a junction respectively and divide 126 and couple of conductor bridge joint pin 127, the radiused edges 124 of load bearing seat 121 electrically connects with projection 125, the coupling part 126 of the projection 125 and first electrode 123 electrically connects, the lead frame pin 127 of the coupling part 126 of first electrode 123 and first electrode 123 electrically connects, the lead frame pin 127 of the coupling part 126 of second electrode 124 and second electrode 124 electrically connects, and load bearing seat 112 has a first surface 128 and a second surface 129, and wherein second surface 129 is positioned at the opposition side of first surface 128.Load bearing seat 121 is as the usefulness of carrying high power (input power is greater than 1W) led chip 112, and the first surface 128 of load bearing seat 121 has a sunk part 131, sunk part 131 can have optical performance as the reflection cup (Reflector cup) of LED simultaneously.Can utilize for example chip join agent of elargol (figure does not show) that the high-capacity LED chip 112 shown in Fig. 2 b is connected to sunk part 131.The shape of extension 132 can be tabular, L type tabular or other similar shape.Then, please refer to Fig. 4, it shows the formation of a lead 130, and lead 130 has two-end-point, and the two ends of lead 130 are electrically connected to the coupling part 126 of high-capacity LED chip 112 and first electrode 123 shown in Fig. 3 a, Fig. 3 b respectively.The material of lead 130 can be gold, silver, copper, tungsten, nickel, silicon, aluminium, molybdenum or above-mentioned alloy, ceramic composite, class brill material with carbon element, metal oxide or other electric conducting material.Then, utilize an encapsulating material 111 coated wire framves 113 and high-capacity LED chip 112 so that protection to be provided.Encapsulating material 111 simultaneously can be as the lens of LED, and its material can be epoxy resin (Epoxy), and encapsulating material 111 can utilize filling mould (mold filling) mode to form, and this filling mould mode can be finished lens and encapsulation simultaneously.To form the high-power LED encapsulation construction 100 of the embodiment of the invention.
Second embodiment
Please refer to Fig. 3 b, it shows the stereogram that the lead frame 200 of the high-power LED encapsulation construction of second embodiment of the invention combines with heat sink material 137.One heat sink material 137 is set on the second surface 129 of load bearing seat 121, heat sink material 137 has one second top 138, one second bottom 139, one group of the 3rd side 140 and one group of the 4th side 141, second top 138 of heat sink material 137 contacts with first bottom 136 of the second surface 129 of load bearing seat 121 and extension 132.Wherein the encapsulating material shown in Fig. 2 b 111 has a bottom (figure does not show), second bottom, 139 homonymies of itself and heat sink material 137, second bottom 139 of heat sink material 137 can trim with the bottom (figure does not show) of encapsulating material 111, also can protrude from the bottom of encapsulating material.And heat sink material 137 has the coefficient of heat conduction big than encapsulating material 111, and wherein assembly and the identical part shown in Fig. 3 a then can not done repeated description at this with reference to the relevant narration of front.
Comparative example
Please refer to Fig. 3 c, it shows lead frame 300 stereograms of the LED encapsulating structure of comparative example.Lead frame 300 has a load bearing seat 121, one first electrode 123 and one second electrode 124, load bearing seat 121 has a radiused edges 124 and a projection 125, this first electrode 123 and second electrode 124 have a junction respectively and divide 126 and couple of conductor bridge joint pin 127, the radiused edges 124 of load bearing seat 121 electrically connects with projection 125, the coupling part 126 of the projection 125 and first electrode 123 electrically connects, the lead frame pin 127 of the coupling part 126 of first electrode 123 and first electrode 123 electrically connects, the lead frame pin 127 of the coupling part 126 of second electrode 124 and second electrode 124 electrically connects, and load bearing seat 112 has a first surface 128 and a second surface 129, and wherein second surface 129 is positioned at the opposition side of first surface 128.Load bearing seat 121 is as the usefulness of carrying high power (input power is greater than 1W) led chip 112, and the first surface 128 of load bearing seat 121 has a sunk part 131, and sunk part 131 simultaneously can be as the reflection cup (Reflectorcup) of LED.Can utilize for example chip join agent of elargol (figure does not show) that high-capacity LED chip 112 is connected to sunk part 131.
Fig. 4 is the front view/profile along Fig. 2 aA-A ' tangent line, and its demonstration is arranged on the heat radiation approach 144 of the high-power LED encapsulation construction 100 of the comparative example of the present invention on the printed circuit board (PCB) 143.In high-power LED encapsulation construction 100, when high-capacity LED chip 112 adstante febres, the heat of its generation can transfer heat to printed circuit board (PCB) 143 via lead frame 113, the heat radiation approach 144 of high-power LED encapsulation construction 100 also can transfer heat to the external world, so can have different directions via encapsulating material 111.In general, since the coefficient of heat conduction of lead frame 113 (Thermal Conductivity, W/mK) much larger than encapsulating material 111, therefore most heat will be passed to printed circuit board (PCB) 143 by lead frame 113.
The lead frame 200 of the high-power LED encapsulation construction of first embodiment of the invention has a pair of extension 132 and is connected with the radiused edges 124 of load bearing seat 121.Having this lead frame 200 to extension 132 provides the area of dissipation big than the lead frame 300 of comparative example LED encapsulating structure of the present invention, and the heat that high-capacity LED chip 112 is produced can promptly be passed to the surface of high-power LED encapsulation construction 100 via lead frame 200.In addition, the lead frame 200 of the high-power LED encapsulation construction of second embodiment of the invention is with after heat sink material 137 combines, not only have the area of dissipation big than lead frame 200, and the heat sink material in the embodiment of the invention 137 has the coefficient of heat conduction big than lead frame 200, so the high-power LED encapsulation construction 100 that this kind lead frame 200 combines with heat sink material 137, its radiating efficiency are higher than the high-power LED encapsulation construction 100 that only has lead frame 200.And heat sink material 137 also can be exposed to outside the encapsulating material 111, directly engages with printed circuit board (PCB) 143, and bigger area of dissipation and better radiating efficiency is provided.Therefore can utilize low-cost Piranha LED encapsulation flow process to reach high-power LED encapsulation construction.
In order to represent the radiating efficiency of high-power LED encapsulation construction 100 of the present invention, with the finite element analysis software of ANSYS company (
5.6) lead frame 300 of simulation analysis comparative example, the lead frame 200 of first embodiment of the invention and the second embodiment lead frame 200 be in conjunction with the heat radiation behavior of 137 3 kinds of form LED of heat sink material encapsulating structure.Please refer to Fig. 5 a to Fig. 5 c, its lead frame 200 that shows the lead frame 200 of lead frame 300, first embodiment of the invention of comparative example and second embodiment respectively is in conjunction with 137 3 kinds of form heat distributions of heat sink material simulation drawing.It shows three kinds of kenel LED encapsulating structures under free convection, when ambient temperature is 25 ℃, and the Temperature Distribution result of lead frame and heat sink material when input power is 0.1W.The highest temperature of three kinds of kenel LED encapsulating structures all betides on the chip, and chip temperature is respectively 87.7 ℃ (lead frames 300 of comparative example), 85.1 ℃ (lead frame 200 of first embodiment) and 83.9 ℃ (lead frame 200 of second embodiment is in conjunction with heat sink material 137).The lead frame 200 of second embodiment is minimum in conjunction with the chip temperature of the LED encapsulation of heat sink material 137, and this is because it has good cooling mechanism.In addition, generally when differentiating electronic product heat and pass effect good and bad, can be assessed by thermal resistance value.Thermal resistance value Rja is defined as:
Tj and Ta be respectively chip connect surface temperature and ambient temperature (℃), P is for applying power (W).As can be known when fixedly applying power, when cooling mechanism was good, Tj and Ta temperature were approaching more by following formula, and then Rja is more little.In like manner, when bad as if cooling mechanism, Tj and Ta temperature spread are big more, and then Rja is also big more.Assess the cooling mechanism of these three kinds of kenel LED encapsulating structures with thermal resistance, thermal resistance is respectively 627 ℃/W (lead frame 300 of comparative example), 601 ℃/W (lead frames 200 of first embodiment) and 589 ℃/W (lead frame 200 of second embodiment is in conjunction with heat sink material 137).In like manner, the lead frame 200 of second embodiment is minimum in conjunction with the thermal resistance value of heat sink material 137, and promptly heat-sinking capability is best.In addition, by the thermal resistance value of these three kinds of kenel LED encapsulating structures as can be known, when the every increase of input power 1W, the temperature that comparative example lead frame 300 chips increase than the lead frame 200 of second embodiment in conjunction with many 38 ℃ of the chip temperature of heat sink material 137.This also illustrates that in high-power LED encapsulation construction lead frame 200 can significantly reduce chip temperature in conjunction with the high-power LED encapsulation construction 100 of heat sink material 137.
By above-mentioned emulation as can be known, lead frame of the present invention and have good heat dissipation characteristics in conjunction with the high-power LED encapsulation construction of lead frame and heat sink material.After having made lead frame, make high-power LED encapsulation construction of the present invention with traditional Piranha LED encapsulation flow process and only must once can finish encapsulation.And in traditional high-power LED encapsulation construction, generally all must be earlier in conjunction with lead frame and two parts of outer cover, then again with remaining combination of components to finish encapsulation.By contrast, high-power LED encapsulation construction manufacturing process of the present invention can be comparatively simple and quick.Because its speed of production is very fast comparatively speaking, so cost is also lower.Promptly by this kind creative ideas, the designed high-power LED encapsulation construction that goes out has multiple advantages such as high heat dissipation characteristics, simple in structure and low cost of manufacture.
Though the present invention with preferred embodiment openly as above; right its is not in order to qualification the present invention, any insider, without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking claims person of defining.
Claims (18)
1. the encapsulating structure of a light-emitting diode comprises:
One lead frame, it has a load bearing seat, a pair of extension, one first electrode and one second electrode, this load bearing seat has a radiused edges and a projection, this has a first side to the extension, one first top and one first bottom, this first side is connected with this radiused edges of this load bearing seat, this first electrode and this second electrode have a junction respectively and divide and couple of conductor bridge joint pin, this radiused edges of this load bearing seat and this projection electrically connect, this coupling part of this projection and this first pair of electrode electrically connects, this of this coupling part of this first electrode and this first electrode electrically connects the lead frame pin, this of this coupling part of this second electrode and this second electrode electrically connects the lead frame pin, and this load bearing seat has a first surface and a second surface, and wherein this second surface is positioned at the opposition side of this first surface;
One LED crystal particle is arranged on this first surface of this load bearing seat;
One lead has two-end-point, and this two-end-point electrically connects with this coupling part of this LED crystal particle and this second electrode respectively; And
One encapsulating material has one first coefficient of heat conduction, and this encapsulating material coats this lead frame and this LED crystal particle,
Wherein, the encapsulating structure of described light-emitting diode also comprises:
One heat sink material, be arranged on this second surface of this load bearing seat, this heat sink material has one second top, one second bottom, one group of the 3rd side and one group of the 4th side, and this of this heat sink material second top contacts with this second surface of this load bearing seat and this first bottom of this extension.
2. the encapsulating structure of light-emitting diode according to claim 1, wherein this first surface of this load bearing seat has a sunk part.
3. the encapsulating structure of light-emitting diode according to claim 2, wherein this sunk part has the light reflection performance for the reflection cup.
4. the encapsulating structure of light-emitting diode according to claim 3, wherein this LED crystal particle is arranged on this reflection cup.
5. the encapsulating structure of light-emitting diode according to claim 1, wherein the input power of this LED crystal particle is greater than 1W.
6. the encapsulating structure of light-emitting diode according to claim 1, wherein this coupling part is a shape of a hoof zone.
7. the encapsulating structure of light-emitting diode according to claim 1, wherein the material of this lead comprises that gold, silver, copper, tungsten, nickel, silicon, aluminium, molybdenum or above-mentioned alloy, ceramic composite, class bore material with carbon element, metal oxide.
8. the encapsulating structure of light-emitting diode according to claim 1, wherein this extension is shaped as tabular, L type tabular.
9. the encapsulating structure of light-emitting diode according to claim 1, wherein this of this heat sink material second top and the 3rd side contact with this first bottom of this extension of this load bearing seat.
10. the encapsulating structure of light-emitting diode according to claim 1, wherein this heat sink material has one second coefficient of heat conduction, and this second coefficient of heat conduction is greater than this first coefficient of heat conduction.
11. the encapsulating structure of light-emitting diode according to claim 1, wherein the material of this lead frame comprises gold, silver, copper, tungsten, nickel, silicon, aluminium, molybdenum or above-mentioned alloy, ceramic composite, class brill material with carbon element, metal oxide.
12. the encapsulating structure of light-emitting diode according to claim 1, wherein this lead frame is that die stamping mode forms.
13. the encapsulating structure of light-emitting diode according to claim 1, wherein this encapsulating material is lens.
14. the encapsulating structure of light-emitting diode according to claim 1, wherein this encapsulating material forms for irritating the mould mode.
15. the encapsulating structure of light-emitting diode according to claim 1, wherein the material of this encapsulating material is an epoxy resin.
16. the encapsulating structure of light-emitting diode according to claim 1, wherein this encapsulating material has one the 3rd bottom, this second surface homonymy of itself and this load bearing seat.
17. the encapsulating structure of light-emitting diode according to claim 1, wherein the 3rd bottom of this of this heat sink material second bottom and this encapsulating material trims.
18. the encapsulating structure of light-emitting diode according to claim 1, wherein this of this heat sink material second bottom protrudes from the 3rd bottom of this encapsulating material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101642561A CN100502068C (en) | 2006-12-07 | 2006-12-07 | LED packaging structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101642561A CN100502068C (en) | 2006-12-07 | 2006-12-07 | LED packaging structure |
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| CN101197404A CN101197404A (en) | 2008-06-11 |
| CN100502068C true CN100502068C (en) | 2009-06-17 |
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| CNB2006101642561A Active CN100502068C (en) | 2006-12-07 | 2006-12-07 | LED packaging structure |
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| CN (1) | CN100502068C (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102610602A (en) * | 2011-01-25 | 2012-07-25 | 四川柏狮光电技术有限公司 | High-resolution LED (light emitting diode) light source made of single-package-based material and manufacturing process of high-resolution LED light source |
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