CN100501433C - High power semiconductor tube test method and device - Google Patents
High power semiconductor tube test method and device Download PDFInfo
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- CN100501433C CN100501433C CN 200610038361 CN200610038361A CN100501433C CN 100501433 C CN100501433 C CN 100501433C CN 200610038361 CN200610038361 CN 200610038361 CN 200610038361 A CN200610038361 A CN 200610038361A CN 100501433 C CN100501433 C CN 100501433C
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Abstract
The invention belongs to the Characteristics Test Technology of semiconductor devices, which involved in a high-power semiconductor devices and the test method. This method is to set up a triangle wave source, whose output connects an amplifier and a drive circuit. The drive circuit drives dipolar component, which connected a current and voltage measurement module. The flux storage circuit supply driving circuit with big energy. Furthermore, IPC is designed to control the test procedure. IPC export a pulse control signals to amplifier by the Logic Control Module, which make the amplifier export triangular wave. The invention has low power consumption and radiation when testing the high-power semiconductor.
Description
Technical field
The invention belongs to the characteristic test technology of semiconductor devices, relate to a kind of high power semiconduction tube test method and device.
Background technology
Continuous drive source (collector source, base stage source) is adopted in traditional high power semiconduction tube characteristic test basically, two-part power consumption of measured piece and test device system and heating are all bigger, and this has also limited the particularly characteristic test of the above high-current semiconductor pipe of 100A of high power valve.
Summary of the invention
It is low that technical matters to be solved by this invention provides a kind of power consumption, the high power semiconduction tube proving installation that the measuring system heating is little.
The technical scheme that high power semiconduction tube test method of the present invention is used for the test of dipole semiconductor pipe is: a triangle wave source is set, the output of triangle wave source is connected with driving circuit through amplifying circuit, driving circuit drives two utmost point measured pieces, two utmost point measured pieces are connected with voltage measurement module with current measurement module, have an energy storage circuit to provide for driving circuit connects and measure required macro-energy; Be provided with the industrial computer that test process is controlled in addition, to pulse control signal of amplifying circuit output, this pulse control signal makes the triangular wave of amplifying circuit output pulse to industrial computer by Logic control module.
The technical scheme that high power semiconduction tube test method of the present invention is used for the test of three utmost point transistors is: a triangle wave source is set, the output of triangle wave source is connected with driving circuit through amplifying circuit, driving circuit drives three utmost point measured pieces, three utmost point measured pieces are connected with voltage measurement module with current measurement module, have an energy storage circuit to provide for driving circuit connects and measure required macro-energy; A ladder wave source is set, and the ladder wave source outputs to the grid or the base stage of measured piece; In addition, also be provided with the industrial computer that test process is controlled, to pulse control signal of amplifying circuit output, this pulse control signal makes the triangular wave of amplifying circuit output pulse to industrial computer by Logic control module; Industrial computer is also exported a pulse control signal by Logic control module to the ladder wave source, and this pulse control signal makes the staircase waveform of a pulse of ladder wave source output.
The technical scheme that high power semi-conductor proving installation of the present invention is used for the test of dipole semiconductor pipe is: this device comprises a triangle wave source, the output of triangle wave source is connected with a driving circuit through an amplifying circuit, driving circuit connects two utmost point measured pieces, three utmost point measured pieces also are connected with current measurement module and voltage measurement module, have an energy storage circuit to be connected with driving circuit; This device also includes an industrial computer, and industrial computer is connected with amplifying circuit by a Logic control module, can make the pulse control signal of amplifying circuit output pulse triangular wave to amplifying circuit output.
The technical scheme that high power semi-conductor proving installation of the present invention is used for the test of three utmost point transistors is: this device comprises a triangle wave source, the output of triangle wave source is connected with a driving circuit through an amplifying circuit, driving circuit connects three utmost point measured pieces, two utmost point measured pieces also are connected with current measurement module and voltage measurement module, have an energy storage circuit to be connected with driving circuit; This device comprises also and also includes an industrial computer that industrial computer is connected with amplifying circuit by a Logic control module, to export the pulse control signal that can make amplifying circuit export the pulse triangular wave to amplifying circuit; Industrial computer also is connected with a ladder wave source, and its control ladder wave source is to the base stage or the grid output pulse step ripple of three utmost point measured pieces.
In above-mentioned two technical schemes of apparatus of the present invention, the amplifying circuit that is connected between triangle wave source and the driving circuit includes discharge circuit U1, analog switch U2, analog switch U3A and U3B, filtering circuit U4A and U4B, amplifier U5A and U5B.At the difference of measured piece polarity (PNP or NPN), triangle wave source to the connection line of driving circuit has two: one is connected to driving circuit through discharge circuit U1, analog switch U2, analog switch U3A, filtering circuit U4A, amplifier U5A successively; Another is connected to driving circuit through discharge circuit U1, analog switch U2, analog switch U3B, filtering circuit U4B, amplifier U5B successively.
Device of the present invention is used for the technical scheme of three utmost point transistors test, described driving circuit includes the high-power FET V as driving tube, the grid of field effect transistor is connected with the output of amplifying circuit, the drain electrode of field effect transistor V is connected with power output end, the source electrode of field effect transistor is connected with power supply backspace end through storage capacitor, measured piece is connected between the two poles of the earth of storage capacitor, and the ladder wave source is connected the base stage or the grid of three utmost point measured pieces.Opposed polarity (PNP or NPN) in order to adapt to measured piece also can be provided with the transfer contact of convertible wiring direction before two test poles of measured piece.
Device of the present invention is used for the technical scheme of dipole semiconductor pipe test, described driving circuit includes the high-power FET V as driving tube, the grid of field effect transistor is connected with the output of amplifying circuit, the drain electrode of field effect transistor V is connected with the positive pole of power output end and storage capacitor, the negative pole of storage capacitor connects the power supply return terminal, and two test poles of two utmost point measured pieces connect the source electrode of the V of the negative pole of storage capacitor and field effect transistor respectively.Opposed polarity (PNP or NPN) in order to adapt to measured piece also can be provided with the transfer contact of convertible wiring direction before two test poles of measured piece.
The present invention can prevent effectively that test macro collector source part from driving the problems of excessive heat of high power valve.When measuring three very big power tubes, high-power driving power supply can adopt continuous triangular wave, storage capacitor is connected on the S utmost point of driving tube, base stage adopts impulse source, like this, the driving tube of system just need not pass through big electric current, and only needing provides the charging current that is no more than 10A approximately to electric capacity, and the thermal value of driving tube is reduced greatly; And when surveying the two poles of the earth such as heavy-duty diode transistor, storage capacitor is received the D utmost point of driving tube with high-current relay, drive source adopts the less pulse triangular wave of dutycycle, makes thermal value reduce to minimum.
Description of drawings
Fig. 1 is that the inventive method and device are used for dipole semiconductor pipe testing principle block diagram;
Fig. 2 is that the inventive method and device are used for three utmost point transistor testing principle block diagrams;
Fig. 3 is the amplifying circuit schematic diagram of apparatus of the present invention;
Fig. 4 is that apparatus of the present invention are used for the dipole semiconductor pipe driving circuit schematic diagram in when test;
Fig. 5 is that apparatus of the present invention are used for three utmost point transistors driving circuit schematic diagram in when test.
Embodiment
As shown in Figure 1 and Figure 2, when high power valve is tested, industrial computer produces the program-controlled triangular wave of a kind of gain, this triangular wave as the collector (drain electrode) of high power valve sweep drain voltage (0～± 2V), triangular-wave generator is mainly by the industrial computer software emulation, through D/A conversion triangular wave, the gain-adjusted of triangular wave is again by the datum V of D/A
REFVariation realize.
A kind of like this triangular wave of Gain Adjustable joint is through amplifier and interrelated logic control, as when diode is tested, forming pulse, triangular wave directly passes through amplifying circuit when triode is tested, Logic control module is also controlled NPN, PNP polarity, after driving circuit with the macro-energy that energy storage circuit forms, is delivered to measured piece according to the waveform of amplifying circuit, after the voltage/current sample circuit is delivered to industrial computer sampling, processing, preservation etc.
Fig. 3 is the electrical block diagram of amplifier.This part circuit forms circuit, pulse bandwidth filtering circuit, big current driving circuit, high-power MOSFET S circuit, big current output circuit etc. by heavy current pulse and forms.When heavy-duty diode was tested, triangular wave was through amplifier U1 and analog switch U2, U3A (positive polarity), U3B (negative polarity) and with door U6, produce the heavy current pulse triangular wave; When large power triode was tested, triangular wave was directly by U1, U2, U3.Pulse triangular wave or continuous triangle ripple are through U4A (4B) filtering, and the amplifier through U5A (5B) x15 multiplication benefit amplifies again, drives follow-up high-power MOS (insulated gate) field effect transistor.
As Fig. 4, shown in Figure 5, driving circuit can be by the transformer of a 45V/5A, form the 60VHC power supply through current rectifying and wave filtering circuit, again through energy storage circuit, the i.e. storage capacitor of 2 parallel connections (C10000 μ F/100V) energy storage, this capacitor C is connected to 2 points (the s utmost point of metal-oxide-semiconductor) by relay K 3 when surveying triode, as shown in Figure 5.When surveying diode, be connected to 1 point (the d utmost point of metal-oxide-semiconductor), as shown in Figure 4 by relay K 3.
The high-power driving pipe is composed in parallel by two 1XFN180N10 isolated gate FETs, and the gain of whole scanning voltage is carried out closed-loop control by the Rf of amplifier.Polarity control circuit is finished by relay transfer contact K1 and K2.When measured piece was positive polarity, the high energy electric weight on the capacitor C was connected to 1 point through driving tube V through K1, through resistance in series R string, delivered to socket C, was back to socket E through measured piece, through the contact 2 of sample resistance RS to K2; When measured piece is negative polarity, high energy electric weight on the capacitor C, through driving tube V, this moment, K1 connect 2 points, be connected to socket E through sample resistance RS, be back to socket C through measured piece, through resistance in series R string, to the contact 1 of K2, get back to the return terminal 60VHCRTN of transformer at last, finish test assignment, wherein, with voltage, current sampling circuit.
Claims (9)
1, a kind of high power semiconduction tube test method, it is characterized in that: a triangle wave source is set, the output of triangle wave source is connected with driving circuit through amplifying circuit, driving circuit drives two utmost point measured pieces, two utmost point measured pieces are connected with voltage measurement module with current measurement module, have an energy storage circuit to provide for driving circuit connects and measure required macro-energy; Be provided with the industrial computer that test process is controlled in addition, to pulse control signal of amplifying circuit output, this pulse control signal makes the triangular wave of amplifying circuit output pulse to industrial computer by Logic control module.
2, a kind of high power semiconduction tube test method, it is characterized in that: a triangle wave source is set, the output of triangle wave source is connected with driving circuit through amplifying circuit, driving circuit drives three utmost point measured pieces, three utmost point measured pieces are connected with voltage measurement module with current measurement module, have an energy storage circuit to provide for driving circuit connects and measure required macro-energy; A ladder wave source is set, and the ladder wave source outputs to the grid or the base stage of measured piece; In addition, also be provided with the industrial computer that test process is controlled, to pulse control signal of amplifying circuit output, this pulse control signal makes the triangular wave of amplifying circuit output pulse to industrial computer by Logic control module; Industrial computer is also exported a pulse control signal by Logic control module to the ladder wave source, and this pulse control signal makes the staircase waveform of a pulse of ladder wave source output.
3, a kind of high power semiconduction tube proving installation, it is characterized in that: this device comprises a triangle wave source, the output of triangle wave source is connected with a driving circuit through an amplifying circuit, driving circuit connects two utmost point measured pieces, two utmost point measured pieces also are connected with current measurement module and voltage measurement module, have an energy storage circuit to be connected with driving circuit; This device comprises also and also includes an industrial computer that industrial computer is connected with amplifying circuit by a Logic control module, to export the pulse control signal that can make amplifying circuit export the pulse triangular wave to amplifying circuit.
4, high power semiconduction tube proving installation according to claim 3 is characterized in that: amplifying circuit includes discharge circuit U1, analog switch U2, analog switch U3A and U3B, filtering circuit U4A and U4B, amplifier U5A and U5B; Triangle wave source to the connection line of driving circuit has two: one is connected to driving circuit through discharge circuit U1, analog switch U2, analog switch U3A, filtering circuit U4A, amplifier U5A successively; Another is connected to driving circuit through discharge circuit U1, analog switch U2, analog switch U3B, filtering circuit U4B, amplifier U5B successively.
5, according to claim 3 or 4 described high power semiconduction tube proving installations, it is characterized in that: described driving circuit includes the high-power FET V as driving tube, the grid of field effect transistor is connected with the output of amplifying circuit, the drain electrode of field effect transistor V is connected with the positive pole of power output end and storage capacitor, the negative pole of storage capacitor connects the power supply return terminal, and two test poles of two utmost point measured pieces connect the source electrode of the V of the negative pole of storage capacitor and field effect transistor respectively.
6, high power semiconduction tube proving installation according to claim 5 is characterized in that: the transfer contact that was respectively arranged with convertible wiring direction before two test poles of measured piece.
7, a kind of high power semiconduction tube proving installation, it is characterized in that: this device comprises a triangle wave source, the output of triangle wave source is connected with a driving circuit through an amplifying circuit, driving circuit connects three utmost point measured pieces, three utmost point measured pieces also are connected with current measurement module and voltage measurement module, have an energy storage circuit to be connected with driving circuit; This device comprises also and also includes an industrial computer that industrial computer is connected with amplifying circuit by a Logic control module, to export the pulse control signal that can make amplifying circuit export the pulse triangular wave to amplifying circuit; Industrial computer also is connected with a ladder wave source, and its control ladder wave source is to the base stage or the grid output pulse step ripple of three utmost point measured pieces.
8, high power semiconduction tube proving installation according to claim 7 is characterized in that: amplifying circuit includes discharge circuit U1, analog switch U2, analog switch U3A and U3B, filtering circuit U4A and U4B, amplifier U5A and U5B; Triangle wave source to the connection line of driving circuit has two: one is connected to driving circuit through discharge circuit U1, analog switch U2, analog switch U3A, filtering circuit U4A, amplifier U5A successively; Another is connected to driving circuit through discharge circuit U1, analog switch U2, analog switch U3B, filtering circuit U4B, amplifier U5B successively.
9, according to claim 7 or 8 described high power semiconduction tube proving installations, it is characterized in that: described driving circuit includes the high-power FET V as driving tube, the grid of field effect transistor is connected with the output of amplifying circuit, the drain electrode of field effect transistor V is connected with power output end, the source electrode of field effect transistor is connected with the power supply return terminal through storage capacitor, the ladder wave source is connected the base stage or the grid of three utmost point measured pieces, and residue the two poles of the earth of three utmost point measured pieces link to each other with the two poles of the earth of storage capacitor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610038361 CN100501433C (en) | 2006-02-20 | 2006-02-20 | High power semiconductor tube test method and device |
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|---|---|---|---|
| CN 200610038361 CN100501433C (en) | 2006-02-20 | 2006-02-20 | High power semiconductor tube test method and device |
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| CN101025431A CN101025431A (en) | 2007-08-29 |
| CN100501433C true CN100501433C (en) | 2009-06-17 |
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| CN 200610038361 Expired - Fee Related CN100501433C (en) | 2006-02-20 | 2006-02-20 | High power semiconductor tube test method and device |
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Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103323765B (en) * | 2013-07-04 | 2015-08-12 | 邰若鹏 | A kind of tube characteristic curve tracer |
| CN103592607A (en) * | 2013-10-29 | 2014-02-19 | 江苏绿扬电子仪器集团有限公司 | Pulse testing method for high-power driving source |
| WO2016034233A1 (en) * | 2014-09-04 | 2016-03-10 | Siemens Aktiengesellschaft | Method for testing a high-power semiconductor element |
| WO2016034230A1 (en) * | 2014-09-04 | 2016-03-10 | Siemens Aktiengesellschaft | Test circuit for a high-power semiconductor element |
| CN104977442A (en) * | 2015-06-18 | 2015-10-14 | 杭州长川科技股份有限公司 | Power module circuit for high-current power device test system |
| CN107436384A (en) * | 2016-05-27 | 2017-12-05 | 无锡华润上华科技有限公司 | The test system and its control system of semiconductor mobile ion |
| JP6926716B2 (en) * | 2017-06-23 | 2021-08-25 | 富士電機株式会社 | Semiconductor integrated device and its gate screening test method |
| CN107482990A (en) * | 2017-10-11 | 2017-12-15 | 荣成市华诚橡胶有限公司 | A kind of speed change gear of Rubber Conveyor Belt Scrap |
| CN108490330A (en) * | 2018-03-30 | 2018-09-04 | 上海陆芯电子科技有限公司 | A kind of semiconductor switch pipe test device |
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- 2006-02-20 CN CN 200610038361 patent/CN100501433C/en not_active Expired - Fee Related
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| CN101025431A (en) | 2007-08-29 |
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Denomination of invention: High power semiconduction tube test method and device Effective date of registration: 20160803 Granted publication date: 20090617 Pledgee: Yangzhong Jingcheng economic and Trade Industrial General Corporation Pledgor: Jiangsu Lvyang Electronic Instrument Group Co., Ltd. Registration number: 2016980000108 |
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